Abstract: A method for repairing an at least externally coated hollow component. The direct mechanical machining of a coated component after use removes the need for a coating-removal and selective hollowing step and a selective repair of cracks, since a design adaptation leads to a component being engineered or used such that it can be used again as a result of external dimensional stipulations.

Abstract: A carrier head includes a base assembly, a substrate mounting surface connected to the base assembly, a plurality of segments disposed circumferentially around the substrate mounting surface to provide a collet retaining ring to surround a substrate mounted on the substrate mounting surface, and an outer ring that is vertically movable relative to the plurality of segments. An inner surface of the collet retaining ring is configured to engage a substrate, and the collect retaining ring and outer ring are configured such that vertical motion of the outer ring controls motion of the collet retaining ring between a clamping and unclamping position.

Abstract: Embodiments of the present disclosure relate to advanced polishing pads with tunable chemical, material and structural properties, and new methods of manufacturing the same. According to one or more embodiments of the disclosure, it has been discovered that a polishing pad with improved properties may be produced by an additive manufacturing process, such as a three-dimensional (3D) printing process. Embodiments of the present disclosure thus may provide an advanced polishing pad that has discrete features and geometries, formed from at least two different materials that include functional polymers, functional oligomers, reactive diluents, and curing agents. For example, the advanced polishing pad may be formed from a plurality of polymeric layers, by the automated sequential deposition of at least one resin precursor composition followed by at least one curing step, wherein each layer may represent at least one polymer composition, and/or regions of different compositions.

Abstract: The present disclosure provides a retaining ring for polishing a wafer by a slurry. The retaining ring includes a ring-shaped main body and a plurality of guiding elements. The main body has an outer surface, an inner surface, and an inner space for accommodating the wafer. The main body includes a plurality of channels configured to allow the slurry to flow into the inner space from the outer surface. The plurality of guiding elements is disposed at the outer surface of the main body with respect to the plurality of channels. Each of the guiding elements forms a slurry capture area with the main body to guide the slurry towards each of the respective channels.

Abstract: The invention provides a polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The polymer-polymer composite polishing pad includes a polishing layer having a polishing surface and a polymeric matrix forming the polishing layer. The polymer matrix is hydrophilic as measured with distilled water at a pH of 7 at a surface roughness of 10 ?m rms after soaking in distilled water for five minutes. Cationic fluoropolymer particles having nitrogen-containing end groups are embedded in the polymeric matrix. The cationic fluoropolymer particles can increase polishing removal rate of substrate on a patterned wafer when polishing with slurries containing anionic colloidal silica.

Abstract: The invention relates to a grinding machine, which is suitable for a robot-supported grinding process. According to one embodiment, the grinding machine has a housing, a motor arranged in the interior of the housing, a fan wheel arranged on a motor shaft of the motor in the interior of the housing, and a support plate coupled to the motor shaft for receiving a grinding disc. The support plate has openings for intake of grinding dust into the interior of the housing. The grinding machine furthermore has an outlet arranged in a wall of the housing for exhausting the grinding dust out of the interior of the housing and a non-rerun valve arranged in the wall of the housing. The non-return valve enables an to escape from the interior of the housing, but prevents intake of air into the interior of the housing.

Abstract: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, the platen having a recess, a flexible membrane in the recess, and an in-situ vibration monitoring system to generate a signal. The in-situ acoustic monitoring system includes a vibration sensor supported by the flexible membrane and positioned to couple to an underside of the polishing pad.

Abstract: A method of forming a CMP pad includes providing a solution of a block copolymer (BCP), where the BCP includes a first segment and a second segment connected to the first segment, the second segment being different from the first segment in composition. The method further includes processing the BCP to form a polymer network having a first phase and a second phase embedded in the first phase, where the first phase includes the first segment and the second phase includes the second segment, and subsequently removing the second phase from the polymer network, thereby forming a polymer film that includes a network of pores embedded in the first phase. Thereafter, the method proceeds to combining the CMP top pad and a CMP sub-pad to form a CMP pad, where the CMP top pad is configured to engage with a workpiece during a CMP process.

Abstract: A system and method for polishing a substrate, and a retaining ring assembly therefor, are described herein. A retaining ring assembly is configured to be attached to a carrier head. The retaining ring assembly includes a retaining ring including a lower surface, an inner surface, an outer surface and a plurality of grooves, where the lower surface is configured to contact a polishing pad during a polishing process, and each of the plurality of grooves are formed in the lower surface and extend from the inner surface to the outer surface. The retaining ring assembly includes a plurality of retainers, each retainer including a movable tooth at least partially disposed in a respective groove of the retaining ring and moveable relative to the lower surface.

Abstract: A semiconductor device and method of manufacture are provided. In an embodiment a first semiconductor device and a second semiconductor device are formed within a semiconductor wafer and a scribe region between the first semiconductor device and the second semiconductor device is patterned. A singulation process is then utilized within the scribe region to singulate the first semiconductor device from the second semiconductor device. The first semiconductor device and the second semiconductor device are then bonded to a second semiconductor substrate and thinned in order to remove extension regions from the first semiconductor device and the second semiconductor device.

Abstract: A method for controlling the polishing of a gemstone includes: obtaining a three-dimensional model of the gemstone; fixing the gemstone in a dop, wherein an initial facet to be polished is aligned; obtaining at least one image of the initial facet; based on the obtained at least one image and the obtained three-dimensional model, determining at least first setting parameters for a first planned facet positioned between the initial facet and a desired final polished facet; setting the dop for obtaining a polished gemstone having a polished facet approaching the first planned facet; obtaining at least one image of the polished facet; based on the obtained at least one image of the polished facet and the three-dimensional model, determining at least further setting parameters for a further planned facet; setting the dop for obtaining a polished gemstone having a polished facet approaching the further planned facet.

Abstract: A system reinforcement learning method includes: processing an input image based on a first network of a system to obtain a first result; inputting the first result to a second network of the system to obtain a second result; and obtaining a reinforcement operation based on the second result by means of a reinforcement network, and adjusting the first result based on the reinforcement operation to obtain a target result. According to the embodiments of the present disclosure, information is fed back from downstream to upstream by means of the reinforcement network, and an output result of the system is optimized.

Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates. Chemical additives comprise at least one nitrogen-containing aromatic heterocyclic compound and at least one non-ionic organic molecule having more than one hydroxyl functional group organic.

Abstract: Gypsum panels and methods for their manufacture are provided herein. The gypsum panels include a gypsum core having a first surface and a second opposed surface and a first fiberglass mat associated with the first surface of the gypsum core, such that gypsum from the gypsum core penetrates at least a portion of the first fiberglass mat.

Abstract: A wafer polishing head is provided. The wafer polishing head includes a carrier head, a plurality of piezoelectric actuators disposed on the carrier head, and a membrane disposed over the plurality of piezoelectric actuators. The plurality of piezoelectric actuators is configured to provide mechanical forces on the membrane and generate an electrical charge when receiving counterforces of the mechanical forces through the membrane. A wafer polishing system and a method for polishing a substrate using the same are also provided.

Abstract: A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.

Abstract: During chemical mechanical polishing of a substrate, a signal value that depends on a thickness of a layer in a measurement spot on a substrate undergoing polishing is determined by a first in-situ monitoring system. An image of at least the measurement spot of the substrate is generated by a second in-situ imaging system. Machine vision processing, e.g., a convolutional neural network, is used to determine a characterizing value for the measurement spot based on the image. Then a measurement value is calculated based on both the characterizing value and the signal value.

Abstract: A polishing apparatus includes a polishing station to hold a polishing pad, a carrier head to hold a substrate in contact with a polishing pad at the polishing station, a camera positioned to capture an image of a lower surface of a consumable part when the consumable part moves away from the polishing pad, and a controller configured to perform an image processing algorithm on the image to determine whether the consumable part is damaged. The consumable part can be a retaining ring on a carrier head, or a conditioner disk on a conditioner head.

Abstract: A polishing head of a wafer polishing apparatus is provided with: a membrane head that can independently control a center control pressure pressing a center portion of a wafer, and an outer periphery control pressure pressing an outer peripheral portion of the wafer; an outer ring integrated with the membrane head so as to configure the outer peripheral portion of the membrane head; and a contact type retainer ring provided outside the membrane head. The membrane head has a central pressure chamber of a single compartment structure that controls the center control pressure, and an outer peripheral pressure chamber that is provided above the central pressure chamber, and that controls the outer periphery control pressure. A position of a lower end of the outer ring reaches at least a position of an inner bottom surface of the central pressure chamber.

Abstract: The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. It includes a polyurea polishing layer and a polyurea matrix. The polyurea has a soft segment being a copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix being cured with a curative agent and including gas or liquid-filled polymeric microelements. The polyurea matrix has a bulk region and a transition region adjacent the bulk region that extends to the polishing layer. The polymeric microelements in the transition region decrease in thickness as they approach the polishing layer with thickness of the compressed microelements adjacent the polishing layer being less than fifty percent of a diameter of the polymeric microelements in the bulk region. The polishing layer remains hydrophilic during polishing in shear conditions.

Abstract: A Taiko wafer ring cut process method is provided. The Taiko wafer ring cut process method includes the following steps. A Taiko wafer is disposed on the platform. The Taiko wafer is performing by laser ring cutting so that a Taiko ring and an edge portion of the Taiko wafer are separated from a wafer portion of the Taiko wafer. The wafer portion of the Taiko wafer is adhered to a frame.

Abstract: An SiC ingot forming method includes: a holding step of holding by a chuck table a cut section of a primitive SiC ingot cut from an SiC ingot growth base; a planarization step of grinding an end surface of the primitive SiC ingot held by the chuck table, to planarize the end surface; a c-plane detection step of detecting a c-plane of the primitive SiC ingot from the planarized end surface; a first end surface forming step of grinding the planarized end surface, to form a first end surface inclined at an off angle relative to the c-plane; and a second end surface forming step of holding the first end surface by the chuck table and grinding the cut section of the primitive SiC ingot in parallel to the first end surface, to form a second end surface.

Abstract: An apparatus for performing chemical mechanical polish on a wafer includes a polishing head that includes a retaining ring. The polishing head is configured to hold the wafer in the retaining ring. The retaining ring includes a first ring having a first hardness, and a second ring encircled by the first ring, wherein the second ring has a second hardness smaller than the first hardness.

Abstract: A carrier head includes a base assembly, a substrate mounting surface connected to the base assembly, and a plurality of segments disposed circumferentially around the substrate mounting surface to provide a retaining ring to surround a substrate mounted on the substrate mounting surface. An inner surface of each of the plurality of segments is configured to engage the substrate, and each segment of the plurality of segments of the retaining ring is pivotally connected to the base assembly such that a lower portion of each segment of the retaining ring is swingable toward and away from the substrate.

Abstract: In order to respond flexibly to various processing modes, such as forming curved surface shapes, when cutting a workpiece using a wire saw, this wire saw device (1) is provided with: a single robot arm (2) that is capable of moving freely by means of multi-axis control; a wire saw unit (3) that is detachably connected to the robot arm (2) via a tool changer (7); a wire (8) that spans a plurality of pulleys supported within the wire saw unit (3); and a workpiece cutting zone (20) that is established between the pulleys. The workpiece is cut to a prescribed shape by moving the robot arm (2) in a preset direction while running the wire (8) of the wire saw unit (3) and pressing the wire (8) against the supported workpiece.

Abstract: A polishing pad including a polishing layer and at least one detection window is provided. The polishing layer includes a polishing surface and a back surface having at least one protrusion. The at least one detection window is disposed at a location corresponding to the at least one protrusion in the polishing layer, and the at least one protrusion surrounds the at least one detection window. A manufacturing method and a polishing method of the polishing pad are also provided.

Abstract: Various embodiments disclosed relate to a partially shaped abrasive particle. The partially shaped abrasive particle includes a shaped portion, engineered to have a polygonal shape, and an irregular portion. The irregular portion is coupled to a base of the shaped portion, forming a single partially shaped abrasive particle.

Abstract: A diamond tool comprising a tool shank and a tool head, which is fixed on the tool shank and which is formed by a layer of material interspersed with diamonds at least in sections, the layer of material interspersed with diamonds at least in sections being directly integrally bonded to the tool shank by an electroplating deposition process and the tool head having a recess on the front side, so that in cross-section the tool head has the form of a circular ring in the area of the free end, the tool head forming a hollow milling cutter and a wall forming the hollow milling cutter and having the form of a circular ring consisting only of a nickel-diamond material that is grown by electroplating.

Abstract: Provided is a method of lapping a semiconductor wafer, which can suppress the formation of a ring-shaped pattern in a nanotopography map. The method of lapping a semiconductor wafer includes: a stopping step of stopping lapping of a semiconductor wafer; a reversing step of reversing surfaces of the semiconductor wafer facing a upper plate and a lower plate after the stopping step; and a resuming step of resuming lapping of the semiconductor wafer after the reversing step while maintaining the reversal of the surfaces facing the plates.

Abstract: A substrate processing system configured to process a substrate includes an eccentricity detection device configured to detect, in a combined substrate in which a first substrate and a second substrate are bonded to each other, an eccentricity of the first substrate; a modification layer forming device configured to form a modification layer within the first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate; and a periphery removing device configured to remove the peripheral portion starting from the modification layer.

Abstract: A biocompatible controlled release form of complexed iodine is achieved by a complexation of polyvinyl alcohol based foam and characterized by a residual starch component to optimize iodine release profiles. The resulting iodine complexed polyvinyl alcohol foam may be utilized locally as an antimicrobial agent that releases controlled amounts of iodine sufficient to kill microbes for extended durations without excessive bulk and rigidity.

Abstract: A polishing liquid is supplied without passing through a rotary joint in a face-up type polishing apparatus. This application discloses a polishing head for the face-up type polishing apparatus used by mounting a polishing pad on a lower surface as one embodiment. The polishing head includes a liquid reservoir portion that receives a liquid and a liquid discharge port that discharges the liquid received by the liquid reservoir portion. The liquid reservoir portion is disposed around a rotation axis of the polishing head. The liquid discharge port is disposed on the lower surface of the polishing head. An annular opening centering on the rotation axis of the polishing head is formed on an upper portion of the polishing head. The liquid reservoir portion is communicated with a space outside the polishing head via the opening.

Abstract: Method and system for monitoring a polishing pad is provided. The polishing pad includes a bottom layer, a polishing layer disposed on the bottom layer, and a plurality of mark structures disposed on the bottom layer and in the polishing layer to have a top surface coplanar with the polishing layer to indicate consumption level of the polishing layer. The monitoring system includes an acquisition module, a memory module, and a determining module connected to both the acquisition module and the memory module. The determining module, the acquisition module, and the memory module are configured to monitor the consumption level of the polishing layer and to recognize that the polishing pad needs to be replaced.

Abstract: A PVA brush cleaning method includes immersing a PVA brush in a cleaning solution containing an organic matter, thereby removing a siloxane compound in the PVA brush; and applying vibration to the PVA brush, thereby removing impurities in the PVA brush.

Abstract: A carrier head for chemical mechanical polishing includes a base, an actuator, a substrate mounting surface, and a retainer. The retainer includes an inner section and an outer section connected by a flexure. A bottom of the inner section of the retainer provides an inner portion of a lower surface configured to contact a polishing pad. An inner surface of the inner section extends upwardly from an inner edge of the lower surface to circumferentially surround the substrate mounting surface. The inner section of the retainer is positioned to receive a controllable load from the actuator and is vertically movable relative to the base. A bottom of the outer section of the retainer provides an outer portion of the lower surface. The outer section of the retainer is vertically fixed to the base. The inner section of the retainer is vertically movable relative to the outer section of the retainer.

Abstract: A flexible membrane for a carrier head of a chemical mechanical polisher includes a main portion, an annular outer portion, and three annular flaps. The main portion has a substrate mounting surface with a radius R. The annular outer portion extends upwardly from an outer edge of the main portion and has a lower edge connected to the main portion and an upper edge. The three annular flaps include a first annular flap joined to an inner surface of the main portion at a radial position between 75% and 95% of R, a second inwardly-extending annular flap joined to the annular outer portion at a position between the lower edge and the upper edge, and a third inwardly-extending annular flap joined to the upper edge of the annular outer portion.

Abstract: There is provided a processing method including the steps of measuring a thickness of the wafer, holding the wafer on a holder, supplying a liquid resin to a table that faces the holder, relatively moving the holder and the table closely to each other to coat the wafer with the liquid resin, and hardening the liquid resin that has coated the wafer. In the resin applying step, a distance by which the holder and the table are to be relatively moved closely to each other to coat the wafer with the liquid resin is determined depending on the measured thickness of the wafer.

Abstract: A chemical mechanical polishing (CMP) system that includes a platen, a conduit having a heating segment and a delivery outlet, and a heater coupled to the heating segment of the conduit. The delivery outlet is positioned adjacent to the platen, whereas the heating segment defines a dispensing distance with the delivery outlet. The dispensing distance is associated with a stability of a CMP slurry at an elevated temperature that is above an ambient temperature.

Abstract: Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiment, the size (or diameter) and distribution of a plurality of pores are adjusted, whereby the polishing performance such as polishing rate and within-wafer non-uniformity can be further enhanced.

Abstract: A method for double-side polishing a wafer uses a double-side polishing machine wherein a carrier which is yet to be arranged in the double-side polishing machine is previously subjected to two-stage double-side polishing which uses a double-side polishing machine different from the double-side polishing machine adopted for double-side polishing the wafer and includes primary polishing using slurry containing abrasive grains and secondary polishing using an inorganic alkali solution containing no abrasive grain, the carrier subjected to the two-stage double-side polishing is arranged in the double-side polishing machine adopted for double-side polishing the wafer, and the double-side polishing of the wafer is performed. Consequently, the method for double-side polishing a wafer enables suppressing damages to wafers to be polished immediately after arranging the carrier between the upper and lower turntables.

Abstract: The invention provides a polymer-polymer composite polishing method comprising a polishing layer having a polishing surface for polishing or planarizing a substrate. The method includes attaching a polymer-polymer composite having a polishing layer and a polymeric matrix. The polymer matrix has fluoropolymer particles embedded in the polymeric matrix. Then a cationic particle slurry is applied to the polymer-polymer composite polishing pad. Conditioning the polymer-polymer composite polishing pad with an abrasive cuts the polymer-polymer composite polishing pad; and rubbing the cut polymer-polymer composite polishing pad against the substrate forms the polishing surface. The polishing surface has a fluorine concentration measured in atomic percent at a penetration depth of 1 to 10 nm of at least ten percent higher than the bulk fluorine concentration measured with at a penetration depth of 1 to 10 ?m to polish or planarize the substrate.

Abstract: In the composition according to the embodiment, the composition of oligomers that constitute the chains in a urethane-based prepolymer may be adjusted to control the physical properties thereof such as gelation time. Thus, since the micropore characteristics, polishing rate, and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled, it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.

Abstract: In some embodiments, the present disclosure, in some embodiments, relates to a method of forming a CMP membrane. The method is performed by providing a malleable material within a cavity within a membrane mold. The cavity has a central region and a peripheral region surrounding the central region. The malleable material within the cavity is cured to form a membrane. Curing the malleable material is performed by heating the malleable material within the central region of the membrane mold to a first temperature and heating the malleable material within the peripheral region of the membrane mold to a second temperature that is greater than the first temperature.

Abstract: A method and system for polishing a plurality of workpieces is disclosed. The method and system comprises providing a polishing tool with multiple polishing heads; and providing a substrate tray that can hold the plurality of work pieces in a fixed position on a tray underneath the polishing heads. The system and method includes moving the tray within the polisher. Finally, the method and system includes configuring the multiple polishing heads with the appropriate pad/slurry combinations to polish the workpieces and to create a finished polished surface on the plurality of work pieces.

Abstract: A polishing apparatus 100 includes a first electric motor 14 that rotationally drives a polishing table 12, and a second electric motor 22 that rotationally drives a top ring 20 that holds a semiconductor wafer 18. The polishing apparatus 100 includes: a current detection portion 24; an accumulation portion 110 that accumulates, for a prescribed interval, current values of three phases that are detected by the current detection portion 24; a difference portion 112 that determines a difference between a detected current value in an interval that is different to the prescribed interval and the accumulated current value; and an endpoint detection portion 29 that detects a polishing endpoint that indicates the end of polishing of the surface of the semiconductor wafer 18, based on a change in the difference that the difference portion 112 outputs.

Abstract: A one-step headlight restoration formulation is also provided that includes a polyurethane dispersion of aliphatic polycarbonate urethane present from 20 to 85 total weight percent, along with a wetting agent present from 1 to 4 total weight percent. A biocide is present from 0.005 to 0.5 total weight percent of the formulation. A carrier constitutes the remainder of the formulation. A kit for a one-step headlight restoration is provided that includes a wipe for applying said formulation to a headlight surface in need of resurfacing as a one step process. The process of using the kit includes removing a formulation impregnated wipe from an envelope and contacting the wipe with the headlight surface to apply said formulation by wiping evenly on a headlight lens surface to form a restorative film.

Abstract: An apparatus and method for uniformly holding a substrate without flexure or bending of the substrate, thereby enabling accurate shape measurements of the substrate such as wafer curvature, z-height values and other surface characteristics. Techniques include using a liquid as a supporting surface for a substrate thereby providing uniform support. Liquid used has a same specific gravity of a substrate being supported so that the substrate can float on the liquid without sinking. Uniform support of the substrate enables precision metrology.

Abstract: In the composition according to an embodiment, the weight ratio of toluene 2,4-diisocyanate in which one NCO group is reacted and unreacted toluene 2,6-diisocyanate in the urethane-based prepolymer is adjusted, whereby such physical properties as gelation time can be controlled. Thus, the polishing rate and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled while it has a hardness suitable for a soft pad, whereby it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.

Abstract: Semiconductor wafers are polished on both sides between polishing pads of a Shore A hardness of at least 80 and a compressibility of less than 3%, attached to upper and lower polishing plates, the polishing pads attached to the upper and lower polishing plates by bonding the polishing pads to the plates, and positioning an intermediate pad having a compressibility of at least 3% between the two bonded polishing pads as an intermediate layer and then pressing together the two polishing pads with the intermediate pad situated therebetween for a period of time.

Abstract: Provided a method of producing a carrier which make it possible to prevent the reduction in the flatness of a semiconductor wafer even if the semiconductor wafer is subjected to repeated double-side polishing procedures. The method of producing a carrier including a metal portion and a ring-shaped resin portion includes: a preparation step of preparing the metal portion and the resin portion (Step S1); a placement step of placing the resin portion in the retainer opening in the metal portion (Step S2); and a resin portion polishing step of polishing both surface of the resin portion (Step S4). The method includes, prior to the resin portion polishing step (Step S4), a production stage swelling step of swelling the resin portion placed in the retainer opening in the metal portion by impregnating the resin portion with a first liquid (Step S3).