Abstract: A polishing wheel including a lower polishing surface and defining a different color from a secondary portion of the polishing wheel, so as to indicate wear of the polishing surface. The polishing surface includes a plurality of main radial flutes extending from a central passage to an outer edge. A reduced profile for the main radial flutes is provided adjacent to the outer edge. A plurality of secondary radial flutes is provided extending from the outer edge, but not in communication with either the central passage or the main radial flutes.

Abstract: Endless abrasive belt useful for polishing or otherwise abrading surfaces.

Abstract: A polishing pad having a polishing surface, a back surface and a sidewall is provided. The sidewall is connected to the polishing surface and the back surface. The polishing pad includes a polishing region and a region neighboring to the polishing region. Wherein, at least one stress buffer pattern is designed in the neighboring region. The stress buffer pattern is formed to buffer the stress created during a polishing process to prevent the region from being protruded and thus prevent the surface of the region, once protruded, from rubbing against the wafer carrier to generate particles, so that contamination of the surface of the wafers can be avoided. On the other hand, at least one cambered surface can be designed on the sidewall of the polishing pad to prevent the sidewall from rubbing against the wafer carrier to generate particles, so that contamination can be avoided.

Abstract: A polishing pad (104) having an annular polishing track (122) and including a plurality of grooves (148) that each traverse the polishing track. Each groove includes a plurality of flow control segments (CS1–CS3) and at least two discontinuities in slope (D1, D2) located within the polishing track.

Abstract: A chemical mechanical polishing pad which can be advantageously used for the polishing of a metal film or the polishing of an insulating film, provides a flat polished surface, enables slurry to be efficiently removed, has sufficiently long service life, can provide a high polishing rate and has the effect of reducing the number of scratches. This polishing pad has one or more grooves on its polishing surface, wherein the groove(s) is/are formed in the polishing surface in such a manner that it/they intersect(s) a single virtual straight line extending from the center portion toward the peripheral portion of the polishing surface a plurality of times and has/have a width of 0.1 to 1.5 mm and a depth of 0.9 to 9.8 mm, the shortest distance between adjacent intersections between it/them and the virtual straight line is 0.3 to 2.0 mm, and the ratio of the depth of the groove(s) to the thickness of the polishing pad is 1/7 to 1/1.1.

Abstract: A bonded abrasive tool, having a structure permeable to fluid flow, comprises sintered agglomerates of a plurality of abrasive grains and a binding material, the binding material being characterized by a melting temperature between 500 and 1400° C., and the sintered agglomerates having a loose packing density of ?1.6 g/cc and three-dimensional shape; a bond material; and about 35–80 volume % total porosity, including at least 30 volume % interconnected porosity. Methods for making the sintered agglomerates and abrasive tools containing the sintered agglomerates are described.

Abstract: A polishing pad (104, 304, 404, 504) having an annular polishing track (152, 312, 412, 512) for polishing a wafer (120, 316, 416, 516). A plurality of grooves (112, 320, 420, 520) are arranged within the wafer track so that they are spaced from one another both radially and circumferentially relative to the rotational nature of pad and are at least partially non-circumferential relative to the pad.

Abstract: A polishing pad used for precise polishing of the surface of a lapped glass workpiece when a glass substrate for use in data recording media is manufactured from a glass workpiece. The polishing pad comprises a base and a polishing portion laminated on the base and contacting the surface of the glass workpiece at the time of polishing. The polishing portion is formed of a foam made of a synthetic resin having a 100% modulus of 11.8 MPa or less. A type of parameter representing the surface roughness of the polishing portion, namely, the maximum height (Rmax), is 70 ?m or less.

Abstract: A polishing pad (104, 300) having an annular polishing track (152, 320) and a plurality of groups (160, 308) of grooves (112, 304) repeated circumferentially about the rotational center (128) of the pad. The plurality of grooves in each group are arranged along a trajectory (164, 312) in an offset and overlapping manner so as to provide a plurality of overlapping steps (172, 316) within the annular polishing track. The groups may be arranged in spaced-apart or nested relation with one another.

Abstract: The present invention comprises a customized polishing pad for use in a wafer polishing machine. The polishing pad of the present invention includes a polishing surface integral with the polishing pad. The polishing surface is adapted to frictionally contact a wafer in the polishing machine, thereby polishing the wafer. The polishing surface of the polishing pad includes at least two areas, where each area is adapted to frictionally contact the wafer and achieve a polishing effect specific for that area. A customized polishing effect is achieved by the polishing pad of the present invention when the wafer is selectively moved frictionally against the at least two areas by the wafer polishing machine.

Abstract: The invention provides a polishing pad for chemical-mechanical polishing comprising a body, a polishing surface, and a plurality of elongated pores, wherein about 10% or more of the elongated pores have an aspect ratio of about 3:1 or greater and are substantially oriented in a direction that is coplanar with the polishing surface. The invention further provides a method of polishing a substrate.

Abstract: A plurality of projections and grooves are formed on a polishing member. The grooves are formed in grid pattern. A portion on which the grooves and the projections are formed (polishing portion) has a substantially circular shape in a plane view. Around the polishing portion, an outer peripheral portion having a fixed height is provided. The height of the outer peripheral portion is equal to the height of bottom portions of the grooves. Ends of each of the grooves extend to the outer peripheral portion, which allows slurry and the like entering the grooves to flow outside via the outer peripheral portion. When a polishing pad thus structured is to be bonded to a surface plate, adhesive is applied or a double-stick tape is affixed to a rear surface of a base member, and thereafter, the polishing pad is put in place on the surface plate.

Abstract: A polishing pad has a working layer provided with an abrasive powder, an attaching layer for attaching a pad to a polishing head of a power tool, and a connection layer which connects the working layer with the attaching layer, the connection layer being located between the working and the attaching layer and having a peripheral region which is thinner and also a central region which is thicker than the peripheral region and therefore has an increased elasticity so that during polishing an elasticity of a central portion of the working layer is increased.

Abstract: A polishing pad comprising a recessed portion in the non-polishing surface. This polishing pad can prevent the surface to be polished of an object from being scratched.

Abstract: The present invention describes a method for creating a differential polish rate across a semiconductor wafer. The profile or topography of the semiconductor wafer is determined by locating the high points and low points of the wafer profile. The groove pattern of a polish pad is then adjusted to optimize the polish rate with respect to the particular wafer profile. By increasing the groove depth, width, and/or density of the groove pattern of the polish pad the polish rate may be increased in the areas that correspond to the high points of the wafer profile. By decreasing the groove depth, width, and/or density of the groove pattern of the polish pad the polish rate may be decreased in the areas that correspond to the low points of the wafer profile. A combination of these effects may be desirable in order to stabilize the polish rate across the wafer surface in order to improve the planarization of the polishing process.

Abstract: A method and apparatus for mechanically and/or chemical-mechanically planarizing microelectronic substrates. In one embodiment in accordance with the principles of the present invention, a microelectronic substrate is planarized or polished on a planarizing medium having a thin film and a plurality of micro-features on the film The film may be an incompressible sheet or web substantially impervious to a planarizing solution, and the micro-features may be configured in a selected pattern on the film to restrain fluid flow of the planarizing solution across the surface of the film under the substrate. The micro-features, for example, may be configured in a selected pattern that has a plurality of support points and at least one cavity to entrap a substantially contiguous, uniform distribution of the solution under the substrate during planarization.

Abstract: The present invention discloses a polishing pad that can facilitate process stability, extend length of use, and mitigate process non-uniformity and process induced defects for chemical mechanical planarization processes. The polishing pad of the present invention is a composite of a top pad and a sealed sub-pad. The sealed sub-pad has a sealing mechanism that mitigates liquid penetration into the sub-pad thereby maintaining a substantially uniform compressibility of the sub-pad and the polishing pad and extending a useable life of the polishing pad.

Abstract: A polishing pad used in a method for polishing a semiconductor device is made by combining a polymeric matrix and a dissolvable substance that dissolves upon contact with a polishing slurry.

Abstract: A drywall sanding implement having a shaft, a yoke attached to the shaft, a block pivotably mounted to the yoke, a pair of spindles mounted to the block, and a sanding block removably mounted on each spindle.

Abstract: Method and apparatus for increasing chemical-mechanical-polishing (CMP) selectivity is described. A CMP pad is formed having a pattern of recesses and islands to provide non-contact portions and contact portions, respectively, with respect to contacting a substrate assembly surface to be polished. As the CMP pad is formed from a non-porous material, chemical and mechanical components of material removal are parsed to the non-contact portions and the contact portions, respectively. The relationship or spacing from one contact island to another, or, alternatively viewed, from one non-contact recess to another, provides a duty cycle, which is tailored to increase selectivity for removal of one or more materials over removal of one or more other materials during CMP of a substrate assembly.

Abstract: The invention is directed to a multi-layer polishing pad for chemical-mechanical polishing comprising a polishing layer and a bottom layer, wherein the polishing layer and bottom layer are joined together without the use of an adhesive. The invention is also directed to a polishing pad comprising an optically transmissive multi-layer polishing pad material, wherein the layers of the polishing pad material are joined together without the use of an adhesive.

Abstract: Disclosed is a chemical mechanical polishing pad formed with holes, grooves or a combination thereof. The chemical mechanical polishing pad is characterized in that a plurality of concentric circles each having grooves, holes, or a combination thereof are formed at a polishing surface of the polishing pad. The chemical mechanical polishing pad provides effects of effectively controlling a flow of slurry during a polishing process, thereby achieving a stability in the polishing process in terms of a polishing rate, and achieving an enhancement in the planarization of a wafer.

Abstract: The invention provides a backing for an abrasive article comprising a sheet-like polymeric substrate having a first major surface including a pattern of non-abrasive raised areas and depressed areas and an opposite second major surface including a plurality of shaped engaging elements that are one part of a two-part mechanical engagement system. An abrasive product is provided by coating at least the raised areas of the backing with an abrasive coating.

Abstract: The invention concerns a polishing or lapping device comprising a surface whereon parts to be polished are to be applied, with an interposed abrasive suspension, and with a certain pressure. The invention is characterized in that said surface comprises a plurality of recessed parts (1, 16, 17) forming reservoirs for the abrasive suspension independent of one another and said recessed parts (1, 6, 17) are defined by partitions (2, 26, 27) whereof the top walls (20), co-operating with said abrasive suspension, form active zones for lapping or polishing, said partitions (2, 26, 27) having a substantially constant height over the whole surface of the device, before it is used. The invention is useful for polishing or lapping metal parts.

Abstract: Abrasive body (1) capable of being used in surface processing devices that has an active face (2a) provided with appropriate means of abrasion (3) intended to perform finishing operations on the surface of an object when the said body is set in motion. The abrasive body has a predetermined number of substantially passing cuts (6) defined by the respective flaps (7, 8) lying side by side. When the abrasive body is set in motion on an object to be processed, flaps (7, 8) deform in such a manner as to create appropriate opening that will permit the abraded dust particles to be removed solely and exclusively from that part of the abrasive body actually in contact with the object (FIG. 2).

Abstract: The invention provides abrasive articles comprising: (a) a backing having a first major surface and a second major surface; and (b) an abrasive coating consisting essentially of: (i) a hardened binder coating having a first surface adhered to the flexible backing and a second structured surface comprising a plurality of precisely-shaped protrusions; and (ii) a diamond-like carbon coating superposed and adhered to at least a portion of the structured surface of the hardened binder coating. Also reported is a method of mechanically treating a rigid disk or a rigid disk substrate using the abrasive articles of the present invention.

Abstract: A buffing/polishing pad that is designed so that the buffing or polishing compound or dressing does not saturate or load up in the central portion of the pad. A frustro-conical cut out at the center of the pad biases buffing material towards movement from the center of the pad toward an outer peripheral edge.

Abstract: A method and apparatus for mechanically and/or chemical-mechanically planarizing microelectronic substrates. In one embodiment in accordance with the principles of the present invention, a microelectronic substrate is planarized or polished on a planarizing medium having a thin film and a plurality of micro-features on the film. The film may be an incompressible sheet or web substantially impervious to a planarizing solution, and the micro-features may be configured in a selected pattern on the film to restrain fluid flow of the planarizing solution across the surface of the film under the substrate. The micro-features, for example, may be configured in a selected pattern that has a plurality of support points and at least one cavity to entrap a substantially contiguous, uniform distribution of the solution under the substrate during planarization.

Abstract: An abrasive pad for CMP has a substrate and an abrasive layer disposed on the substrate. An abrasive pad for CMP having a substrate and an abrasive layer disposed on the substrate, wherein said abrasive layer has a three-dimensional structure including a plurality of regularly arranged three-dimensional elements having a predetermined shape, and said abrasive layer comprises an abrasive composite containing advanced alumina abrasive grains produced by a CVD method and a binder as construction components.

Abstract: An abrasive film for polishing a workpiece, including: (a) a substrate; (b) a binder; (c) a multiplicity of abrasive grains which are fixed to a surface of the substrate by the binder; and (d) a water-soluble inorganic compound or a water-soluble organic acid alkali metal salt which is added to the binder. The water-soluble inorganic compound preferably consists of a weak-alkali metal salt or a weak-acid metal salt. The water-soluble organic acid alkali metal salt preferably consists of an anionic surface-active agent or a carboxylic acid alkali metal salt.

Abstract: The present invention relates to a polishing pad. In particular, the polishing pad of the present invention comprises a sublayer, a middle layer, and a top layer which can function as a polishing layer. The polishing pad of the present invention is useful for polishing articles and particularly useful for chemical mechanical polishing or planarization of a microelectronic device, such as a semiconductor wafer.

Abstract: An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing, pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad also exhibits a stable morphology that can be reproduced easily and consistently. The pad surface has macro-texture that includes perforations as well as surface groove designs The surface groove designs have specific relationships between groove depth and overall pad thickness and groove.area and land area.

Abstract: An abrasive body which includes an abrasive layer bonded to a substrate along an interface and at least one strip-like projection extending from the interface into the substrate. The projection has a profile which includes a substantially flat central portion and connecting surfaces to either side of the central section. The surface is sloped from the central section to the interface.

Abstract: An abrasive article is provided which comprises a backing and at least one three-dimensional abrasive coating bonded to a surface of the backing. The abrasive coating comprises a binder formed from a cured binder precursor having dispersed therein a plurality of diamond bead abrasive particles and a filler which comprises from about 40 to about 60 percent weight of the abrasive coating. The abrasive article is particularly suitable for abrading a glass or a glass ceramic workpiece in the presence of a lubricant.

Abstract: An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

Abstract: The invention provides a polishing pad comprising composite particles that comprise a solid core encapsulated by a polymeric shell material, wherein the solid core comprises a material that differs from the polymeric shell material, as well as a method of polishing a substrate with such a polishing pad.

Abstract: A bonded abrasive tool, having a structure permeable to fluid flow, comprises sintered agglomerates of a plurality of abrasive grains and a binding material, the binding material being characterized by a melting temperature between 500 and 1400° C., and the sintered agglomerates having a loose packing density of ≦1.6 g/cc and three-dimensional shape; a bond material; and about 35-80 volume % total porosity, including at least 30 volume % interconnected porosity. Methods for making the sintered agglomerates and abrasive tools containing the sintered agglomerates are described.

Abstract: An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

Abstract: Apparatuses and methods are disclosed using a fixed abrasive polishing pad to perform mechanical polishing of a surface. The apparatus includes a polishing pad positioned opposing a wafer support to provide for polishing of a surface of a wafer placed on the support. The polishing pad includes a first member having a first polishing surface formed from an abrasive first material that is structurally degradable during polishing. The polishing pad also includes a second member having a second polishing surface formed from a second material that is less degradable and less abrasive relative to said first material. The first and second polishing surfaces define a polishing face that is brought into contact with the surface to be polished.

Abstract: A method and apparatus for mechanically and/or chemical-mechanically planarizing microelectronic substrates. In one embodiment in accordance with the principles of the present invention, a microelectronic substrate is planarized orpolished on a planarizing medium having a thin film and a plurality of micro-features on the film. The film may be an incompressible sheet or web substantially impervious to a planarizing solution, and the micro-features may be configured in a selected pattern on the film to restrain fluid flow of the planarizing solution across the surface of the film under the substrate. The micro-features, for example, may be configured in a selected pattern that has a plurality of support points and at least one cavity to entrap a substantially contiguous, uniform distribution of the solution under the substrate during planarization.

Abstract: New, versatile finishing surfaces are described. Unitary finishing elements having discrete finishing members attached to unitary resilient body are disclosed for finishing microdevices such as semiconductor wafers. Finishing surfaces such as discrete finishing members can be comprised of a multiphase polymeric composition. The new unitary finishing elements have lower cost to manufacture and high precision. The unitary finishing elements and finishing surfaces can reduce unwanted surface defect creation on the semiconductor wafers during finishing.

Abstract: A stacked polishing pad includes an upper polishing layer and a lower sub-layer having major faces which are in contact with each other. The polishing layer is substantially impermeable to liquid while the sub-layer is liquid absorbent. The sub-layer has an outer peripheral edge which is sealed to prevent absorption of liquid into the sub-layer through the outer peripheral edge. When the stacked polishing pad is mounted on a platen of a polishing machine, the sub-layer has no exposed surface which can absorb liquid.

Abstract: A polishing pad for use in chemical mechanical polishing (CMP) is disclosed. The polishing pad has a pad surface for polishing wafer surfaces. The pad surface is composed of a polymeric matrix material. The polishing pad also contains a polymeric additive which is defined in the polymeric matrix of the pad surface and in cells of the pad surface. The polymeric additive may include one of a polyurethane, a polyamide, a polyester, a polyacrylonitrile, a polyacrylate, a polymethacrylate, a polyvinylchloride, and a polyvinylidene chloride. The polymeric additive is configured to be hydrophilic so that the pad surface is wettable to enable improved slurry distribution over the pad surface.

Abstract: A flap disc consists of a backing plate to whose peripheral zone laminae overlapping like a fan or roof tiles are attached. In order to improve the abrasive effect of such a flap disc using less material and simpler production, the lamellae 10 consist of first lamellae 12, comprising a backing 14, a base bonding coat 15 applied to the backing, a layer of abrasive grain 16 deposited over the base bonding coat 15, and a size coat 18 over the layer of deposited abrasive grain 16, and second lamellae 20, consisting of a backing 22 and a layer 24 with grinding active fillers applied to the backing.

Abstract: A polishing pad for use in a chemical mechanical polishing system is provided. The pad is mounted to a rotatable platen and comprises a polishing surface and a deflection surface which provides a desired degree of rigidity and compliance to the pad when brought into contact with a substrate. The deflection surface may comprise one or more passageways extending through the pad which vent to atmosphere. In one embodiment, the deflection area defines a raised area and a recessed area. The raised area provides a mounting surface for the platen while the recessed area allows for compliance of the pad. In another embodiment, the deflection area comprises a plurality of channels defining a plurality of slanted protrusions. The channels may be non-intersecting such that the slanted protrusions are elongated portions disposed on the pad. Alternatively, the channels may be intersecting such that the slanted protrusions are isolated from one another and are disposed on the pad in spaced relation.

Abstract: A polishing pad assembly is provided that is useful for the chemical mechanical polishing of glass and electrical devices such as semiconductor wafers that comprises a polish pad and a semi-rigid base material firmly adhered to the polishing pad for positioning on a polishing platen of a polishing machine; wherein the semi-rigid base material has a modulus of rigidity of 0.01-50 GPa (GigaPascals) determined according to ASTM D 790, a thickness of 0.25-15.0 mm, and a grooved surface having a pitch of 5-100 mm and the grooves have a width of 0.025-2.5 mm and a depth of 0.1-2.5 mm.

Abstract: Generally, a method and apparatus for polishing a substrate is provided. In one embodiment, an apparatus for polishing a substrate includes a polishing material having a fluid disposed thereon. The polishing material has a plurality of elements extending from a backing. The fluid that fills the entire volume between the elements comprising the polishing material has a viscosity between about 100 to about 10,000 centipoises. The fluid allows generation of a hydrostatic force that ensures the full and completed envelopment of fluid surrounding the fixed abrasive elements when polishing, thus substantially reducing the deformation of the elements, resulting in extended polishing material life.

Abstract: An apparatus (46) for reconditioning a protective surface (30) of an optically-read digital recording disc (20) includes a turntable (48) configured to receive a center hole (24) of the disc (20) and a first motor (52), coupled to the turntable (48), for rotating the turntable (48) and the disc (20) at a first rotational speed. The apparatus further includes a buffing element (50) for removing an amount of material from the protective surface (30) as the turntable rotates the disc (20) and a second motor (54), coupled to the buffing element (50) for rotating the buffing element (50) at a second rotational speed. A timing element (56) synchronizes the first and second motors (52, 54) to substantially simultaneously cease rotation of the turntable (48) and the buffing element (50) following removal of an amount of material from the disc (20).

Abstract: An abrasive body which includes an abrasive layer bonded to a substrate along an interface and at least one projection extending from the interface into the substrate. The a projection has an essentially elliptical or circular form in plan and a profile which includes a substantially flat central portion and connecting surfaces joining the central portion to the interface and which slope towards the interface.

Abstract: Specific embodiments of the present invention are directed to a chemical mechanical planarization apparatus which comprises a platen assembly for holding an object to be planarized, and a polishing pad having a surface size at least as large as a surface size of the object, the polishing pad being movable relative to the object. A table has a surface supporting the polishing pad and including a plurality of grooves forming a patterned surface. In some embodiments, the grooves form a repeated pattern on the surface of the table. The pattern may include a plurality of platelets having the same shape and size. The platelets may be hexagonal and vertically compliant. The surface of the table is harder than the polishing pad.