Abstract: A bottom face processing method of a pillar-shaped honeycomb structure including steps of: preparing a pillar-shaped honeycomb structure including a plurality of first cells which extend in parallel with each other from a first bottom face to a second bottom face, and each of which is opened in the first bottom face and has a protruding plugged portion in the second bottom face, and a plurality of second cells each of which is adjacent to at least one of the first cells with a partition wall interposed therebetween, which extend in parallel with each other from the first bottom face to the second bottom face, and each of which has a protruding plugged portion in the first bottom face, and is opened in the second bottom face; and removing the protruding portion from the plugged portion of each of the first cells and the second cells of the pillar-shaped honeycomb structure.

Abstract: A dresser includes a main body having a stepped surface comprising a plurality of steps, wherein a thickness of the main body at a first step of the plurality of steps is a largest thickness of the main body, and a thickness of the main body at a last step of the plurality of steps is a smallest thickness of the main body; and a plurality of superhard particles disposed on each of the plurality of steps of the stepped surface. The plurality of steps of the stepped surface are different in area, and particle diameters of the superhard particles increase stepwise from the first step of the plurality of steps to the last step of the plurality of steps.

Abstract: A conditioner of a chemical mechanical polishing (CMP) apparatus includes a conditioning part to polish a polishing pad, an arm to rotate the conditioning part, and a flexible connector connecting the conditioning part with the arm, the flexible connector being moveable to allow relative movements of the conditioning part with respect to the arm.

Abstract: A dresser is enabled to adjust a swing speed in scanning areas set on a polishing member along a swing direction. A surface height of the polishing member in monitoring areas set in advance on the polishing member along the swing direction of the dresser is measured. A dress model matrix defined from the monitoring areas, the scanning areas and a dress model is created. Height profile predicted value is calculated using the dress model and the swing speed in each scanning area or a staying time. Evaluation index is set based on a difference from a target value of a height profile of the polishing member and a step of setting the swing speed in each scanning area of the dresser based on the evaluation index. At least one of parameters to determine the target value or the evaluation index of the height profile is made to change automatically.

Abstract: An abrasive composition comprising a substrate selected from the group consisting of a fibrous substrate, a sponge substrate, and combinations thereof and a plurality of calcium carbonate particles dispersed therein; wherein at least a portion of the plurality of calcium carbonate particles contact the substrate; wherein the fibrous substrate comprises a plurality of fibers; wherein each fiber of the plurality of fibers is characterized by an aspect ratio of equal to or greater than about 2:1; wherein the sponge substrate is characterized by a porosity of equal to or greater than about 5 vol. %, based on the total volume of the sponge substrate; and wherein the abrasive composition is characterized by an abrasiveness that is greater than the abrasiveness of the substrate in the absence of the plurality of calcium carbonate particles.

Abstract: An alkaline cupric chloride etchant for a printed circuit board, comprising copper chloride and a sub-etchant. The sub-etchant comprises the following in percentage by weight: 10 to 30 percent of ammonium chloride, 0.0002 to 25 percent of carboxylic acid and/or ammonium carboxylate, 0.01 to 45 percent of ammonium carbonate and/or ammonium bicarbonate, 0.0001 to 20 percent of one or more selected from hydroxylamine hydrochloride, hydroxylamine sulphate and hydrazine hydrate, the balance being water. The initial feed amount B of copper chloride is calculated according to the following formula: B=(134.5/63.5)x the set value of the copper ion concentration A; the control parameter of the production process of the resulting etchant is set to be: the copper ion concentration of 30-170 g/L.

Abstract: An embodiment according to the present invention relates to a dressing apparatus for cleaning a polishing pad attached to a lower surface plate, the dressing apparatus comprising: a brushing part comprising a brush; a cleaning solution spray unit, comprising a spray nozzle, for spraying the polishing pad with cleaning solution; and a suction unit, comprising a suction inlet, for suctioning particles generated when the cleaning solution is sprayed by the cleaning solution spray unit, wherein the brushing unit, cleaning solution spray unit and suction unit are attached to each other and swing above the polishing pad in unison.

Abstract: The present invention relates to a CMP pad conditioner having a substrate and a cutting tip pattern formed on at least one surface of the substrate, and more particularly to a CMP pad conditioner having cutting tip patterns, in which the cutting tip patterns have an improved structure that can increase the productivity of the CMP pad conditioner and that can sufficiently ensure the strength and safety of the cutting tip patterns.

Abstract: An abrasive article including a body including a bond material having an inorganic material including a ceramic, abrasive agglomerates including silicon carbide contained within the bond material, and a permeability of at least 60.

Abstract: A polishing apparatus includes a polisher, a holder, and a supplier. The polisher polishes a semiconductor substrate or a polishing target film on a semiconductor substrate. The holder holds the semiconductor substrate and presses the semiconductor substrate or the polishing target film against the polisher to rub the semiconductor substrate or the polishing target film against the polisher. The supplier has a nozzle that is to be inserted to the inside of the polisher and that supplies a polishing solution to the inside of the polisher.

Abstract: Polishing pad cleaning systems employing fluid outlets orientated to direct fluid under spray bodies and towards inlet ports, and related methods are disclosed. A polishing pad in combination with slurry contacts a substrate to planarize a surface of the substrate and remove substrate defects while creating debris. A spray system removes the debris from the polishing pad to prevent substrate damage and improve efficiency. By directing fluid under a spray body to the polishing pad and towards an inlet port, the debris may be entrained in the fluid and directed to an inner plenum of the spray body. The fluid-entrained debris is subsequently removed from the inner plenum through an outlet port. In this manner, the debris removal may reduce substrate defects, improve facility cleanliness, and improve pad efficiency.

Abstract: The edge region of one side of a semiconductor wafer is polished by pressing the wafer by means of a rotatable polishing head against a polishing pad lying on a rotating polishing plate, and containing fixed abrasive. The polishing head is provided with a resilient membrane radially subdivided into a plurality of chambers by gas or liquid cushions, the polishing pressure independently selectable for each chamber. The wafer is held in position during polishing by a retainer ring pressed against the polishing pad with an application pressure, a polishing agent is introduced between the wafer and the polishing pad, and the polishing pressure exerted on the wafer in a chamber lying in the edge region of the wafer of the polishing head, and the application pressure of the retainer ring, are selected so that material is essentially removed only at the edge of the wafer.

Abstract: An automatic sheet grinding apparatus includes a stationary stage positioned at a lower portion of the automatic sheet grinding apparatus, a sheet holder positioned on the stationary stage to grip the sheet, and a grinding head part having a chuck assembly fixed to the grinding head part through a spindle, spaced apart from the sheet holder, positioned on the stationary stage, and having a grinding disc attached to the chuck assembly to grind the sheet provided in the sheet holder. The grinding head part includes a thickness measuring unit to measure a thickness of the sheet, and a hardness measuring unit to measure hardness of the sheet. The automatic sheet grinding apparatus further includes rails positioned on the stationary stage and extending in parallel to each other. In this case, the sheet holder is securely and movably provided on the rails positioned on the stationary stage to grip the sheet.

Abstract: A system for use in substrate polishing includes a conditioner system for conditioning a surface of a polishing pad and a vacuum system having a vacuum port. The conditioner system includes a conditioner head constructed to receive an abrasive conditioner component. The vacuum system is configured to apply suction through the vacuum port to the surface of the polishing pad in a direction away from the surface to remove material on the surface.

Abstract: This invention relates to a conditioner for a CMP (Chemical Mechanical Polishing) pad, which is used in a CMP process which is part of the fabrication of a semiconductor device, and more particularly, to a CMP pad conditioner in which the structure of the cutting tips is such that the change in the wear of the polishing pad is not great even when different kinds of slurry are used and when there are changes in pressure of the conditioner, and to a method of manufacturing the same.

Abstract: Methods for polishing a semiconductor wafer using a pad resurfacing arm and an apparatus therefor are disclosed. Embodiments may include providing a semiconductor wafer on a chemical mechanical polishing (CMP) tool, the CMP tool including a polish pad and a pad resurfacing arm which includes a pad cleaning part, a pad conditioning part, and a slurry dispensing part, dispensing a slurry to the polish pad utilizing the pad resurfacing arm, and polishing the semiconductor wafer utilizing the polish pad.

Abstract: A method for conditioning polishing pads for the simultaneous double-side polishing of semiconductor wafer uses a double-side polishing device. The device has an annular lower polishing plate and an annular upper polishing plate, each covered with a polishing pad, as well as a rolling device for carrier disks. The method for conditioning polishing pads includes disposing at least one conditioning tool having external teeth and at least one spacer having external teeth in a working gap formed between the first and second polishing pad, where the thickness of at least one of the conditioning tools differs from the thickness of at least one of the spacers. At least one conditioning tool and one spacer are set, simultaneously, in a revolving movement about the axis of the rolling device and in rotation themselves so as to generate material abrasion of at least one of the polishing pads.

Abstract: Superabrasive tools and methods for the making thereof are disclosed and described. In one aspect, superabrasive particles are chemically bonded to a matrix support material according to a predetermined pattern by a braze alloy. The brazing alloy may be provided as a powder, thin sheet, or sheet of amorphous alloy. A template having a plurality of apertures arranged in a predetermined pattern may be used to place the superabrasive particles on a given substrate or matrix support material.

Abstract: A method of polishing a wafer with a wafer carrier adapted to further reduce the edge effect and allow a wafer to be uniformly polished across its entire surface, with a retaining ring made from very hard materials such as PEEK, PET or polycarbonate with a hardness in the range of 80 to 85 Shore D, while the inner surface or insert is made of polyurethane or other material with a hardness in the range of 85 to 95 Shore A.

Abstract: A chemical mechanical polishing (CMP) apparatus is provided that includes a conditioning disc for conditioning a polishing pad of the CMP apparatus. The conditioning disc includes a plurality of portions of subsystem discs. The portions may be regions of the disc that are concentric. Each portion of the disc is operable to rotate at a different angular velocity. In some embodiments, a different applied loading is provided to each of the portions of the disc in addition to or in lieu of the different angular velocities.

Abstract: The present disclosure relates to a two-phase cleaning element that enhances polishing pad cleaning so as to prevent wafer scratches and contamination in chemical mechanical polishing (CMP) processes. In some embodiments, the two-phase pad cleaning element comprises a first cleaning element and a second cleaning element configured to successively operate upon a section of a CMP polishing pad. The first cleaning element comprises a megasonic cleaning jet configured to utilize cavitation energy to dislodge particles embedded in the CMP polishing pad without damaging the surface of the polishing pad. The second cleaning element is configured to apply a high pressure mist, comprising two fluids, to remove by-products from the CMP polishing pad. By using megasonic cleaning to dislodge embedded particles a two-fluid mist to flush away by-products (e.g., including the dislodged embedded particles), the two-phase pad cleaning element enhances polishing pad cleaning.

Abstract: The method includes: calculating an increment of a sliding distance of a dresser by multiplying a relative speed between the dresser and a polishing member by a contact time between them; correcting the increment of the sliding distance by multiplying the calculated increment of the sliding distance by at least one correction coefficient; calculating the sliding distance by repeatedly adding the corrected increment of the sliding distance to the sliding distance according to elapse of time; and producing the sliding-distance distribution of the dresser from the obtained sliding distance and a position of a sliding-distance calculation point. The at least one correction coefficient includes an unevenness correction coefficient provided for the sliding-distance calculation point.

Abstract: A polishing liquid comprising an abrasive grain, an additive, and water, wherein the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more and less than 1.50 for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces a liquid phase having a content of a non-volatile component of 300 ppm or more when centrifuging an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % for 50 minutes at a centrifugal acceleration of 1.59×105 G.

Abstract: A polishing method of polishing a substrate while preventing coarse particles from being discharged onto a polishing pad is disclosed. In this polishing method, a substrate is brought into sliding contact with a polishing pad while a polishing liquid, which has passed through a filter, is supplied onto the polishing pad. The polishing method includes: passing the polishing liquid through the filter while increasing a physical quantity of the polishing liquid until the physical quantity reaches a predetermined set value, the physical quantity being one of flow rate and pressure of the polishing liquid; and polishing the substrate W on the polishing pad while supplying the polishing liquid that has passed through the filter onto the polishing pad.

Abstract: A coated abrasive article comprises an abrasive layer secured to a backing. The abrasive layer comprises abrasive particles secured by at least one binder to a first major surface of the backing. A supersize is disposed on at least a portion of the abrasive layer. The coated abrasive article has a melt flow zone adjacent to an edge of the coated abrasive article, wherein the melt flow zone has a maximum width of less than 100 micrometers, and the melt flow zone has a maximum height of less than 40 micrometers. Methods of using infrared lasers to ablate coated abrasive articles are also disclosed, wherein a laser wavelength is matched to a component of the coated abrasive article.

Abstract: CMP pad dressers having leveled tips and associated methods are provided. In one aspect, for example, a CMP pad dresser can include a support substrate and a plurality of superabrasive particles secured to the support substrate with each superabrasive particle extending away from the support substrate to a protrusion distance, where a highest protruding tip of each of the plurality of superabrasive particles align along a designated profile with a tip variation of from about 5 microns to about 100 microns.

Abstract: A machining apparatus has a frame carrying a headstock capable of gripping one end of an elongated workpiece and rotating the workpiece about a machining axis. A turntable support is spaced axially from the headstock on the frame. A tailstock carried on the support can be aligned with the machining axis in a machining position of the support. A machining drive is carried on the frame and itself carries a rotatable grinding disk engageable radially of the machining axis with the workpiece when the workpiece is engaged between the headstock and tailstock. A dressing tool carried on the support axially offset from the support axis and angularly offset about the support axis from the tailstock is engageable in a dressing position of the support with the grinding disk for dressing same in the dressing position with the workpiece engaged between the headstock and tailstock.

Abstract: A media-bearing polisher and restorer removes surface and subsurface contaminants from a vehicle, household or other surface. The media-bearing polisher and restorer comprises an ovoid body with a planar bottom. The body comprises a resilient or rigid material and one or more flutes for receiving one or more user fingers. A permeable elastic medium is removably attached to the planar bottom of the body, which absorbs and extracts contaminants from the surface. A variety of media can be used with the media-bearing polisher and restorer.

Abstract: A polishing liquid comprising an abrasive grain, an additive, and water, wherein the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more and less than 1.50 for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces absorbance of 0.035 or more for light having a wavelength of 400 nm in a liquid phase obtained when centrifuging an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % for 50 minutes at a centrifugal acceleration of 1.59×105 G.

Abstract: Embodiments described herein generally relate to devices and methods for magnetic-responsive chemical mechanical polishing. In one embodiment, a device including a support with one or more magnetic field generators formed therein is provided. The magnetic field generators can produce at least one magnetic field. A magnetic-responsive composite is positioned in magnetic connection with the magnetic field generators. When the magnetic-responsive composite receives the magnetic field from the magnetic field generators, the magnetic-responsive composite changes shape.

Abstract: A method for breaking up Chemical Mechanical Polishing (CMP) slurry particles includes receiving a CMP slurry comprising particles suspended in a solution, placing the slurry into a first agitation tank, and agitating the slurry at a first frequency. The first frequency is selected to break up particles having a size within a specified range.

Abstract: Provided is a gear grinding method capable of improving processing accuracy and easily adjusting the crowning shape by simplifying a processing operation. To this end, a work piece (W) is ground by a gear-shaped grinding stone (11) having a drum shape such that crowning along a tooth trace direction is applied to the work piece (W) by applying a relative feed in a feed direction (D1) that intersects a work piece rotation axis (C1) at a predetermined first diagonal angle (?1) between the work piece (W) and the gear-shaped grinding stone (11) while the work piece (W) and the gear-shaped grinding stone (11) are synchronously rotated in the state of being engaged so as to have a predetermined crossed axes angle (?), and the curvature in a grinding stone width direction, which defines the drum shape of the gear-shaped grinding stone (11), and the first diagonal angle (?1) are set according to the crowning shape of the work piece (W).

Abstract: A method for trimming two working layers including bonded abrasive applied on mutually facing sides of an upper and a lower working disk of a grinding apparatus configured for simultaneous double-side processing of flat workpiece includes providing at least one trimming apparatus including a trimming disk, a plurality of trimming bodies and an outer toothing. The upper and lower working disks are rotated. The trimming apparatus is moved between the rotating working disks using a rolling apparatus and the outer toothing on cycloidal paths relative to working layers of the working disks. The working layers and the trimming body are brought into contact so as to release abrasive substances from the trimming bodies and so as to effect material removal from the working layers. The direction of the drives of the grinding apparatus is changed at least twice during trimming.

Abstract: An abrasive tool includes a bonded abrasive body having abrasive grains contained within a bonding material, wherein the bonded abrasive body comprises a complex shape having a form depth (FD) of at least about 0.3. The form depth is described by the equation [(R1?Rs)/R1], wherein Rs is a smallest radius (Rs) at a point along the longitudinal axis of the bonded abrasive body and R1 is a largest radius (R1) at a point along the longitudinal axis of the bonded abrasive body. The abrasive tool can be used to finish complex shapes in workpieces.

Abstract: The present invention describes a microfabricated or nanofabricated structured diamond abrasive with a high surface density array of geometrical protrusions of pyramidal, truncated pyramidal or other shape, of designed shapes, sizes and placements, which provides for improved conditioning of CMP polishing pads, or other abrasive roles. Three methods of fabricating the structured diamond abrasive are described: molding of diamond into an array of grooves of various shapes and sizes etched into Si or another substrate material, with subsequent transferal onto another substrate and removal of the Si; etching of an array of geometrical protrusions into a thick diamond layer, and depositing a thick diamond layer over a substrate pre-patterned (or pre-structured) with an array of geometrical protrusions of designed sizes, shapes and placements on the surface.

Abstract: Methods and systems for evaluating and/or increasing CMP pad dresser performance are provided. In one aspect, for example, a method of identifying overly-aggressive superabrasive particles in a CMP pad dresser can include positioning a CMP pad dresser having a plurality of superabrasive particles on an indicator substrate such that at least a portion of the plurality of superabrasive particles of the CMP pad dresser contact the indicator substrate, and moving the CMP pad dresser across the indicator substrate in a first direction such that the portion of the plurality of superabrasive particles create a first marking pattern on the substrate, wherein the first marking pattern identifies a plurality of working superabrasive particles from among the plurality of superabrasive particles.

Abstract: A polishing pad is provided herein, which may include a plurality of soluble fibers having a diameter in the range of about 5 to 80 micrometers, and an insoluble component. The pad may also pad include a first surface having a plurality of micro-grooves, wherein the soluble fibers form the micro-grooves in the pad. The micro-grooves may have a width and/or depth up to about 150 micrometers. In addition, a method of forming the polishing pad and a method of polishing a surface with the polishing pad is disclosed.

Abstract: A method dresses a polishing member with a diamond dresser having diamond particles arranged on a surface thereof. The method includes determining dressing conditions by performing a simulation of a distribution of a sliding distance of the diamond dresser on a surface of the polishing member, and dressing the polishing member with the diamond dresser under the determined dressing conditions. The simulation includes calculating the sliding distance corrected in accordance with a depth of the diamond particles thrusting into the polishing member.

Abstract: Bonded abrasive articles and in particular organic bonded depressed center wheels with one or more reinforcements have reduced stiffness in comparison to conventional counterparts. Techniques for producing and using such wheels are described. In one example, a method for reducing the stiffness of an organically bonded abrasive wheel includes applying to a raised hub region of a reinforced depressed center wheel a force effective to irreversibly decrease the stiffness of said wheel.

Abstract: A chemical mechanical polishing (CMP) conditioner includes a ceramic substrate having a major surface, and an abrasive coating overlying the major surface. The major surface can include micro-protrusions arranged in a curved pattern. Alternatively, the micro-protrusions can be arranged in an irregular pattern.

Abstract: A waterjet system in accordance with a particular embodiment includes a pressurizing device configured to pressurize a fluid, a cutting head downstream from the pressurizing device, and a catcher positioned to collect a jet from the cutting head. The system can further include a treatment assembly configured to treat a feed fluid to the pressurizing device and/or a byproduct fluid from the catcher, such as by removing submicron colloidal particles from the feed fluid and/or from the byproduct fluid. For example, the treatment assembly can include a coagulation unit, such as a chemical coagulation unit or an electrocoagulation unit, configured to coagulate the submicron colloidal particles. The pressurizing device, the cutting head, and the treatment assembly can be at different respective portions of a fluid-recycling loop.

Abstract: An object is to provide an internal gear grinding machine and a dressing method for a barrel-shaped threaded tool which make it possible to achieve space savings and reduce the size of a machine by simplifying dressing operation. To achieve the object, an internal gear grinding machine for use in grinding a workpiece (W) by synchronously rotating the workpiece (W) and a barrel-shaped threaded grinding wheel (17) in mesh with each other includes a dressing device (20) for dressing the threaded tool (17) by meshing the threaded grinding wheel (17) with a disk dresser (56). At the time of dressing, the threaded grinding wheel (17) and the disc dresser (56) are operated in accordance with the helix angle and the barrel shape of the threaded grinding wheel (17).

Abstract: A method of dressing a wheel using a polycrystalline CVD synthetic diamond dresser, the method comprising: rotating the wheel; and contacting a working surface of the wheel with a working surface of the polycrystalline CVD synthetic diamond dresser, wherein the polycrystalline CVD synthetic diamond dresser is oriented such that a leading edge of the working surface of the polycrystalline CVD synthetic diamond dresser is formed of larger grains than a trailing edge of the working surface of the polycrystalline CVD synthetic diamond dresser.

Abstract: An abrasive polishing slurry including abrasive particles in a carrier fluid and micro-nano members. A system and method for making an abrasive article using the polishing slurry is also disclosed. The system includes a gimballed dressing bar adapted to provide a compressive force sufficient to embed the abrasive particles into the substrate, wherein the members set a height the embedded abrasive particles protrude above the substrate.

Abstract: A planarization device includes a planarization pad and a pad conditioner over the planarization pad. The pad conditioner includes a rotatable plate having a lower surface separated from an upper surface of the planarization pad by a predetermined distance and at least one nozzle opening on the lower surface of the rotatable plate.

Abstract: The present invention provides CMP pad dressers and methods for dressing or conditioning CMP pads. In one aspect, a method for conditioning a CMP pad can include cutting the CMP pad with superabrasive cutting elements and controlling a degree of contact between the CMP pad and the cutting elements using control elements. The degree of contact is established through placement of the control elements relative to the cutting elements.

Abstract: The present disclosure relates to an apparatus and to a method for dressing generating grinding tools or profile grinding tools for the gear cutting processing of toothed workpieces using at least two disk-shaped dressing tools with which one or more tool regions and/or profile regions of the tool are provided with a defined dressing geometry.

Abstract: A continuously variable transmission metal belt includes a metal ring assembly and metal elements. The metal ring assembly includes stacked endless metal rings. Each of the stacked endless metal rings includes a flat peripheral surface and a substantially semicircular end face. The substantially semicircular end face is connected to an end of the peripheral surface in a width direction of each of the stacked endless metal rings. The metal elements are supported on the metal ring assembly. A displacement Z of the end face is smaller than or equal to 0.1R. The displacement Z is defined as Z=R?H. R is a radius of an imaginary circle that passes through a contact point between the peripheral surface and the end face and that is tangent to the end face. H is a distance from a center of the imaginary circle to the peripheral surface.

Abstract: A dressing tool produces a plurality of first radial sections in a first flank of a first screw channel in a grinding worm, and a plurality of second radial sections in a second flank of a second screw channel in the grinding worm. Each radial section extends only a portion of a total radial height of the respective flank, the portion being less than the total radial height of the respective flank. Each first radial section in the first screw channel is radially displaced with respect to a corresponding second radial section in the second screw channel.

Abstract: In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming a polish target film on a substrate and conducting a CMP process for the polish target film. The conducting the CMP process includes bringing a surface of the polish target film into contact with a surface of a polishing pad with a negative Rsk value, and adjusting friction dependency on polishing speed between the polish target film and the polishing pad to a value that restrains the occurrence of a stick slip to polish the polish target film.