Abstract: A pressure monitoring system arranged in a close loop circuit, intended to facilitate chemical mechanical polishing (CMP), is disclosed. The pressure monitoring circuit includes an air regulator, a pressure transducer, a pressure difference transducer and a pressure difference regulator. This hardware is equipped to facilitate finding three control parameters of the monitoring system—polishing pressure (Pp), pressure difference of the polishing pressure and a corresponding wafer pressure (Dp), and deviation of the output pressure difference from a set point pressure difference (Cp). By monitoring Pp, Dp and Cp, air streams in a CMP process can be effectively regulated on a real time basis and the troubleshooting procedure for the system hardware can be practically reduced.

Abstract: Methods and apparatuses for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance with the invention includes pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface. The method continues by moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity. As the substrate assembly and polishing pad rub against each other, a parameter indicative of drag force between the substrate assembly and the polishing pad is measured or sensed at periodic intervals. The measured drag force can be used to generate a plot of work versus time.

Abstract: An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

Abstract: A method is provided for matching dimensions of a spool to a control valve body of a fuel injector. The method includes the steps of measuring land locations and an overall length of a first component of the fuel injector and measuring land locations of a second component of the fuel injector relative to at least each other. The method also includes calculating a grinding amount to be removed from the second component based on the following criteria (i) the measured land locations and the overall length of the first component and (ii) the measured land locations of the second component relative to each other.

Abstract: The grindstone is configured so that at least the surface of each abrasive grain is colored differently from the surface of a base.

Abstract: A method of lapping semiconductor wafers includes the step of transmitting sounds generated during the lapping process to a receiver, allowing the operator to use sound to more quickly detect problems associated with starting the lap process.

Abstract: A reliable, inexpensive “back side” thinning process, capable of globally thinning an integrated circuit die to a target thickness of 10 microns, and maintaining a yield of at least 80%, for chip repair and/or failure analysis of the packaged die. The flip-chip packaged die is exposed at its backside and mounted on a lapping machine with the backside exposed. The thickness of the die is measured at at least five locations on the die. The lapping machine grinds the exposed surface of the die to a thickness somewhat greater than the target thickness. The exposed surface of the die is polished. The thickness of the die is again measured optically with high accuracy. Based on the thickness data collected, appropriate machine operating parameters for further grinding and polishing of the exposed surface are determined. Further grinding and polishing are performed. These steps are repeated until the target thickness is reached.

Abstract: A method to planarize the surface of a semiconductor substrate having shallow trench isolation (STI) reduces erosion of a silicon nitride planarization stop layer, reduces dishing of large areas of the shallow trench isolation, and prevents under polishing of the surface of the semiconductor substrate that will leave portions of the silicon dioxide that fills the shallow trenches covering the silicon nitride planarization stop exposed, is described. The method to planarize the surface of a semiconductor substrate having shallow trenches begins by chemical/mechanical planarization polishing at a first product of platen pressure and platen speed to planarize the semiconductor substrate. Polishing at a first product of platen pressure and platen speed will cause a high rate of material removal with low selectivity to increase production throughput. The silicon nitride stop layer will be examined to determine an end point exposure of the silicon nitride stop layer.

Abstract: A unidirectional and bidirectional optical fiber couplers using polymer optical fibers having mirrors formed within the polymer optical fibers for reflecting optical signals. The mirrors comprise a notch having at least one surface angled with respect to the central axis of the optical fiber for reflecting the optical signal perpendicular to its central axis. A unidirectional embodiment allows input optical signals to be coupled from any combination of input optical fibers and transmitted into any combination of output optical fibers. A bidirectional embodiment allows optical signals from tapping fibers to be reflected in opposite directions along a first, or BUS optical fiber. Another aspect of the present invention is an apparatus and method for controlling the depth of the notch by monitoring residue power through the optical fibers while the notch is being cut.

Abstract: An invention is provided for removing a top wafer layer during a CMP process. Time series data is collected based on a reflected wavelength from a top layer of a wafer. A Fourier Transform is applied to the time series data, and a frequency of peak intensities in the Fourier Transform of the time series data is analyzed to determine a peak magnitude in the frequency. A first removal rate of the top layer is determined based on the peak magnitude in the frequency, and a current thickness of top layer is calculated based on the first removal rate. The CMP process is discontinued when the current thickness of the top layer is equal to or less than a target thickness, and a separate polishing process is performed to remove an additional portion of the top layer. In one aspect, the separate polishing process can be based on a soft endpoint detection process having second removal rate that is lower than the first removal rate.

Abstract: Methods and apparatus are disclosed for detecting a thickness of a surficial layer (e.g., metal or insulating layer) on a workpiece (e.g., semiconductor wafer) during a process for planarizing the layer, so as to stop the process when a suitable process endpoint is reached. Layer thickness is detected based on a spectral-characteristic signal of reflected or transmitted signal light, obtained by directing a probe light onto the surface of the workpiece. Example spectral characteristics are local maxima and minima of signal-light waveform, differences or quotients of the same, a dispersion of the signal-light waveform, a component of a Fourier transform of the signal waveform, a cross-correlation function of the signal waveform. Alternatively, the zeroth order of signal light is selected for measurement, or a spatial coherence length of the probe light is compared with the degree of fineness of the pattern on the surface illuminated with the probe light.

Abstract: A polishing pad has a polishing layer with a polishing surface and a back surface. A plurality of grooves are formed on the polishing surface, and an indentation is formed in the back surface of the polishing layer. A region on the polishing surface corresponding to the indentation in the back surface is free of grooves or has shallower grooves.

Abstract: Chemical-mechanical planarizing machines and methods to maintain processing pads and other planarizing media used in planarizing microelectronic workpieces. In one embodiment, a planarizing machine can include a surfacing device attached to one of a carrier or a support member. The surfacing device is positioned to transmit a non-abrasive energy, such as ultrasonic waves, against the planarizing medium. The planarizing machine can include a controller that is operatively coupled to the surfacing device for activating the surfacing device at appropriate moments either before or during a planarizing cycle of a microelectronic workpiece. In another embodiment the controller can be a computer having a database containing instructions for causing the surfacing device to transmit the non-abrasive energy against the planarizing pad.

Abstract: A semiconductor substrate having a Cu layer formed so as to fill wiring grooves formed in the substrate surface and to cover regions of the substrate surface where no wiring groove is formed is brought into sliding contact with a polishing surface on a turntable to carry out polishing until the Cu layer is polished to a predetermined thickness. Then, the semiconductor substrate is brought into sliding contact with a polishing surface on a turntable to carry out polishing until the Cu layer on the substrate surface is removed, except for portions of the Cu layer formed to fill the wiring grooves, and a barrier metal layer is also removed. Thus, the Cu layer on the substrate surface can be removed uniformly, and the Cu wiring portions formed in the wiring grooves can be planarly and uniformly polished without giving rise to problems of over-polishing such as dishing or erosion.

Abstract: A carrier head has a base, a flexible membrane, and a valve in the carrier head that forms part of a substrate detection system. The valve includes a valve stem that contacts an upper surface of the flexible membrane so that if a substrate is attached to the lower surface of the flexible membrane when the first chamber is evacuated, the valve is actuated to generate a signal to the substrate detection system.

Abstract: Apparatus of carrier in a chemical mechanical polishing equipment comprises a carrier module for holding a wafer face down. A retaining ring and conditioning module is coupled to the carrier module, which is used for protecting the wafer edge against contact with a polishing pad in a deformed shape and executing a conditioning of the polishing pad. A first support module is coupled to the retaining ring and conditioning module, which is used for rotating, pressing down, and supplying conditioning chemicals for the retaining ring and conditioning module.

Abstract: An apparatus for manufacturing a semiconductor device by polishing the surface of a semiconductor substrate is provided, which comprises a polishing pad for polishing the substrate surface, a polishing slurry feed apparatus for feeding a polishing slurry to the substrate surface, and a measuring instrument including an electrode (A) and an electrode (B) immersed in a polishing slurry, wherein a characteristic variation of the polishing slurry is detected from a variation in value of an electric current passing between the electrode (A) and the electrode (B) or from a variation in potential difference between the electrodes.

Abstract: A programmable dicing saw is operable with movement of its spindle and work surface for aligning a dicing blade juxtaposed between flanges on the spindle and dicing a substrate along a predetermined blade path. By locating the center of the substrate, an efficient movement of the blade relative to the substrate center rather than the work surface center saves time. Locating the center of the blade includes aligning opposing substrate edges and edge location data entry into a processor for calculation of the substrate center and control based on the substrate center.

Abstract: A cutting apparatus comprising a rotary shaft which is detachably fitted with a rotary tool including a cutting blade. The rotary tool itself or a storage case storing the rotary tool has an indicator which may be a bar code and shows the characteristic properties of the cutting blade. A reading means such as a bar code reader for reading the above indicator showing the characteristic properties of the cutting blade is installed on the cutting apparatus.

Abstract: An apparatus, as well as a method, brings a surface of a substrate into contact with a polishing pad that has a window, causes relative motion between the substrate and the polishing pad, and directs a light beam through the window so that the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate. Light beam reflections from the substrate are detected, and used to determine polishing parameters, detect process repeatability, and qualify processes.

Abstract: A mobile articulable cutter apparatus for the cutting and dismemberment of a building structure to permit the environmentally safe removal of such structure from a building site. The apparatus comprises a mobile base support having an articulable lift arm extending therefrom. The arm has a distal end thereon. A guidable cutter head is arranged on the distal end of the lift arm. A fluid jet is nozzle arranged in the cutter head. A pressurizable fluid source is arranged in fluid controlled communication with the nozzle. The nozzle is arranged to be in closely positioned guided travel adjacent the surface of the structure to be cut by a jet of fluid under pressure from the nozzle.

Abstract: A CMP system and methods make repeatable measurements of eccentric forces applied to carriers for wafer or polishing pad conditioning pucks. Force applied to the carrier may be accurately measured even though such force is eccentrically applied to such carrier. The CMP system and method provide the repeatable measurement features while supplying fluids within the carrier to the wafer and to a wafer support without interfering with the polishing operations. Similarly, the CMP system and methods remove fluids from the wafer or puck carrier without interfering with the CMP operations. An initial coaxial relationship between an axis of rotation and a carrier axis is maintained during application of the eccentric force, such that a sensor is enabled to make repeatable measurements, as defined above, of the eccentric forces, and the carrier may be a wafer or a puck carrier.

Abstract: In a double side simultaneous grinding machine, in which a plate-like workpiece is held and ground simultaneously on both a front surface and a back surface using a pair of grinding stones provided oppositely at both sides of the workpiece, a relative position between at least one of the center of thickness of the plate-like workpiece and the center of the holding means for holding the workpiece, and the center between stone surfaces of the pair of grinding stones is controlled during grinding. In a double side simultaneous grinding method, the generation of warpage of the plate-like workpiece is suppressed and degradation of warpage is prevented. Thereby, the plate-like workpiece can be processed to have high flatness on both sides. Further, the plate-like workpiece can be ground while a degree of warpage is controlled so that the workpiece is processed to have a warpage of a desired degree.

Abstract: Layers of material deposited exhibit both a local and a global pattern. The local pattern is a function of the underlying wafer surface, but the global pattern is a function of the equipment in which the layer was deposited. Accurate reconstruction of the surface topology of a layer on a product wafer is achieved despite the local pattern by determining the surface topology of a blanket layer on a blank wafer, measuring the thickness of the layer at a few selected locations on a product wafer, calculating scaling coefficients representing deviations of the measured thickness from the blanket layer topology, and then multiplying the blanket layer topology by the scaling coefficients. The surface reconstruction results from modifying the surface topology of the blanket layer so that it has the same thickness at the measured locations as does the product wafer layer.

Abstract: A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.

Abstract: A polishing pad having an optical assembly that does not cause excess wear on a wafer workpiece. The optical assembly is disposed within the pad such that it may move in response to forces applied to the optical assembly. A damping pad may be disposed on the optical assembly to reduce vibrations and further increase the sensitivity of optical measurements.

Abstract: The present invention aims at make automatic real-time measurement of the removal rate in during polishing. For achieving the aim, a polishing system is provided with a sensor 1 for measuring a friction generated between a polishing pad and a workpiece during the polishing. The information processor of the polishing system evaluates the polishing efficiency of the polishing pad 5 on the basis of a fluctuation in the removal rate which is successively obtained from a friction successively detected by the sensor and a predetermined function. The result of the evaluation is used for the determination of the execution timing of a dressing process for the polishing pad, the calculation of the removal from the workpiece, and the like.

Abstract: A grinding machine has an abrasive wheel mounted on a spindle carried by a wheelhead which provides for movement in a direction perpendicular to the spindle. A pair of workheads are separately mounted on workslides and cross slides so that the workheads may be moved along an X-axis or a Y-axis as required to bring chucks of the workheads into grinding position. Sliding movement of the workslides and cross slides is produced by ball screws powered by servo motors and mounted on bearing housings, with the ball screws propelling ball nuts connected to the slides. The machine uses CNC computerized controls, with each of the workheads having a separate and independent control. This enables attainment of a high degree of precision.

Abstract: A method and apparatus for conditioning a polishing pad are described. The method includes steps of providing a chemical mechanical polishing apparatus having a polishing region and a conditioning region; cycling a polishing member through the apparatus; contacting the polishing member in the conditioning region with a conditioning member; and conditioning the polishing member. The apparatus includes an end effector adapted to receive a conditioning member, the end effector being attached to an arm that can be moved horizontally and vertically, and a strain gauge that monitors the force applied to a polishing member.

Abstract: A method and apparatus for pre-conditioning a polishing pad for use in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes a pre-conditioning member having a smooth surface. The method includes providing a pre-conditioning member having a smooth surface, pressing the pre-conditioning member against the polishing pad while moving the polishing pad, and flattening the surface of the polishing pad until a polishing pad flatness is achieved that may be used to achieve a desired semiconductor wafer planarity.

Abstract: In a lens grinding apparatus, an edge corner-portion processing unit has a cutting tool for effecting a facet processing on an edge corner portion of a lens subjected to the finishing process. A region designating unit has a display unit for displaying a shape of the lens before the facet processing on the basis of inputted data. The region designating unit designates a region to be subjected to the facet processing using of the displayed lens shape. A selecting unit selects a facet processing style to be adopted for the designated region of the facet processing from among a plurality of facet processing styles. A computing unit obtains processing data on facet processing on the basis of the selected facet processing style and the position of the edge corner portion in the designated facet processing region.

Abstract: An optical window structure is disclosed. The optical window structure includes a support layer that has a reinforcement layer and a cushioning layer. In addition, the optical windows structure has a polishing pad which is attached to a top surface of the support layer. Furthermore, the optical window structure has an optical window opening and a shaped optical window. The shaped optical window at least partially protrudes into the optical window opening in the support layer and the polishing pad during operation.

Abstract: A method of conserving a facility delivered to a machine during the machine's idle mode is herein described. In one embodiment, the method is directed to a method for conserving coolant water delivery to a semiconductor wafer grinding machine. The system monitors the status of the grinder to determine whether the grinder is active or idle. After the system determines the grinder has entered idle mode, the system reduces the flow of water to the machine. In one embodiment, the flow is simply reduced while, in another embodiment, the flow is terminated. A delay circuit in the system may delay the reduction of the flow rate until some point after entering idle mode. Periodically throughout the idle mode, the system increases the flow of coolant water to the grinder to ensure the temperature of all grinder components remains consistent. The duty cycle of the coolant flow may be adjusted to optimize water conservation and machine readiness.

Abstract: Semiconductor processor systems, systems configured to provide a semiconductor workpiece process fluid, semiconductor workpiece processing methods, methods of preparing semiconductor workpiece process fluid, and methods of delivering semiconductor workpiece process fluid to a semiconductor processor are provided. One aspect of the invention provides a semiconductor processor system including a process chamber adapted to process at least one semiconductor workpiece using a process fluid; a connection coupled with the process chamber and configured to receive the process fluid; a sensor coupled with the connection and configured to output a signal indicative of the process fluid; and a control system coupled with the sensor and configured to control at least one operation of the semiconductor processor system responsive to the signal.

Abstract: A prompter/monitor system for use in combination with wide-belt abrasive surface treating apparatus and including an array of individual axially spaced apart signal generating workpiece sensors operatively positioned across the width of the belt with each sensor creating a signal in response to the presence of a workpiece moving along a segment of the width of the belt. Readout means are provided for receiving signals from each of the sensors, with the readout means including a display responsive to a selected one of the workpiece sensors. A data processor is coupled to the readout for determining the accumulative duration of time during which a workpiece is detected by each sensor, and also determining that certain sensor which has detected the least duration of workpiece presence. The total amount of time for which workpieces are detected for each individual sensor are compared, and the display is actuated to represent those width segments which are being under (or over) utilized.

Abstract: A prompter/monitor system for use in combination with wide-belt abrasive surface treating apparatus and including an array of individual axially spaced apart signal generating workpiece sensors operatively positioned across the width of the belt with each sensor creating a signal in response to the presence of a workpiece moving along a segment or lane of the width of the belt. Readout means are provided for receiving signals from each of the sensors, with the readout means including a display responsive to a selected one of the workpiece sensors. A data processor is coupled to the readout for determining the accumulative duration of time during which a workpiece is detected by each sensor, and also determining that certain sensor which has detected the least duration of workpiece presence which becomes the reference for all others.

Abstract: Disclosed is a polishing apparatus that comprises a polishing tool, a substrate holding member, a measuring device to measure a drive current of a drive unit while the drive unit drives at least one of the polishing tool and the substrate holding member, and a failure detection unit to detect either jumping of the substrate from the substrate member or breakage of the substrate. While a substrate is held by a substrate holding member and pressed against the polishing tool during a polishing operation, the failure detection unit will detect jumping of the substrate from the substrate holding member or breakage of the substrate based on a comparison of the value of the drive current with a threshold value, or a comparison of a waveform pattern of the drive current with a predetermined waveform pattern.

Abstract: A method of using a finishing element having film forming lubricants for finishing semiconductor wafers is described. The lubricants in the finishing element are transferred to operative finishing interface can form lubricating boundary layer. The lubricating boundary layer thickness can be controlled to improve finishing and reduce unwanted surface defects. Differential lubricating boundary layer methods are described to differentially finish semiconductor wafers. Planarization and localized finishing can be improved using differential and/or localized finishing are also discussed.

Abstract: The present invention for a method and apparatus for detection of chemical mechanical planarization endpoint and device planarity comprises imparting at least one variation of an atomic mass of at least one material within the layer. The variation of the atomic mass within the layer is indicative of the layer thickness. The removal of the layer is monitored by detecting the variation in the atomic mass, and/or a change in concentration of the at least one material, during removal of the layer. Once the concentration of the material reaches a minimum threshold, or an atomic mass is detected at a minimum intensity, within a predetermined time duration, the removal of the layer is terminated. The variation in atomic mass, and/or concentration of materials within the layer is used to measure a planarity of the device.

Abstract: A grinding wheel system includes a grinding wheel with at least one embedded sensor. The system also includes an adapter disk containing electronics that process signals produced by each embedded sensor and that transmits sensor information to a data processing platform for further processing of the transmitted information.

Abstract: In chemical mechanical polishing, a substrate is planarized with one or more fixed-abrasive polishing pads. Then the substrate is polished with a standard polishing pad to remove scratch defects created by the fixed-abrasive polishing pads.

Abstract: The invention provides an abrasive article, and methods for the use and the manufacture of the article. The abrasive article comprises an abrasive surface; and a performance index associated with the abrasive article, the index indicating an aspect of the abrasive performance of the article. In abrasive applications, the performance index is used to determine initial process conditions under which the abrasive article will abrade a workpiece.

Abstract: Systems and methods for detecting a presence of blobs on a specimen are provided. One method may include scanning measurement spots across a specimen during polishing of the specimen. The method may also include determining if the blobs are present on the specimen at the measurement spots. Each of the blobs may include unwanted material disposed upon a contiguous portion of the measurement spots. In some instances, the blobs may include copper. In some embodiments, scanning the measurement spots may include measuring an optical property and/or an electrical property of the specimen at the measurement spots. Another embodiment includes dynamically determining a signal threshold distinguishing a presence of the blobs from an absence of the blobs. An additional embodiment includes determining an endpoint of polishing if, for example, blobs are not determined to be present on the specimen.

Abstract: An apparatus and method for fabricating a liquid crystal display panel are disclosed. In case of the single mode that liquid crystal display panels are fabricated with the same size on a large glass substrate, defective unit liquid crystal display panels are kept and discarded not to proceed with a follow-up process. Thus, a material waste is restrained and a yield can be improved. Meanwhile, in case of the multi-mode that liquid crystal display panels are fabricated with difference sizes on a large glass substrate, sub-models are kept, and then after completing the process for the main models, a follow-up process if performed on the sub-models. Thus, use efficiency of the glass substrate can be maximized to improve a productivity and a unit cost of the product can be reduced.

Abstract: In an apparatus and a method for correcting a grinding amount of a unit liquid crystal display panel, by grinding an edge of a unit liquid crystal display panel; generating grinding pictures of the unit liquid crystal display panel; calculating an error value by comparing the grinding pictures with a reference picture; and changing a set value of a grinding unit according to the error value. In addition, by disposing a grinding amount correcting apparatus in a grinding apparatus, correcting a grinding amount of a unit liquid crystal display panel can be performed by an automatic system.

Abstract: In a method for determining an endpoint in a chemical mechanical planarization (CMP) operation, the concentration of an oxidizing agent in the slurry byproduct generated during the CMP operation is monitored. The endpoint of the CMP operation is determined based on the concentration of the oxidizing agent in the slurry byproduct. The concentration of the oxidizing agent in the slurry byproduct may be monitored by diverting the slurry byproduct from a surface of a polishing pad, and measuring an optical property of the slurry byproduct diverted from the surface of the polishing pad. A CMP system configured to implement the method for determining an endpoint also is described.

Abstract: Embodiments of the present invention provide a chemical-mechanical planarization method for planarizing a wafer. The method comprises polishing a surface of the wafer to be planarized, and optically measuring feature heights of features on the surface of the wafer to obtain measurement data during said polishing of the surface. In some embodiments, the feature heights are measured by directing incident light at the surface of the wafer and observing a reflected light intensity of light reflected from the surface. In specific embodiments, the method includes adjusting, in real time, parameters controlling said polishing of the surface in response to the measurement data. The parameters may include a spinning speed of the polishing pad used to polish the surface, an orbiting speed of the polishing pad, a rotational speed of the wafer, a position of the polishing pad, a force between the polishing pad and the object, or the like.

Abstract: A flatness of a substrate is determined to achieve a desired flatness of a mask blank by predicting the variation in flatness resulting from a film stress of a thin film formed on the substrate. The flatness is adjusted by measuring the flatness of the substrate as a measured flatness, selecting a load type with reference to the measured flatness, and polishing the substrate under pressure distribution specified by the load type. A principal surface of the substrate has a flatness greater than 0 &mgr;m and not greater than 0.25 &mgr;m. A polishing apparatus includes a rotatable surface table, a polishing pad formed thereon, abrasive supplying means for supplying an abrasive to the polishing pad, substrate holding means, and substrate pressing means for pressing the substrate. The substrate pressing means has a plurality of pressing members for individually and desirably pressing a plurality of divided regions of the substrate surface.

Abstract: A temperature controlling system for use in a chemical mechanical planarization (CMP) system having a linear polishing belt, a carrier capable of applying a substrate over a preparation location over the linear polishing belt is provided. The temperature controlling system includes a platen having a plurality of zones. The temperature controlling system further includes a temperature sensor configured determine a temperature of the linear polishing belt at a location that is after the preparation location. The system also includes a controller for adjusting a flow of temperature conditioned fluid to selected zones of the plurality of zones of the platen in response to output received from the temperature sensor.

Abstract: A machining controlling apparatus numerically controls a wheel spindle stock and a spindle apparatus, and performs the machining operation of a workpiece by a grinding wheel. When a power failure has been detected by a power-failure detecting unit, a grinding machine is stopped after the grinding wheel is retreated from the workpiece within a very short period until the controlling operation by the machining controlling apparatus becomes impossible.