And Divalent Metal Oxide Other Than Alkaline Earth Oxide Or Magnesium Oxide Patents (Class 501/138)
  • Patent number: 4598055
    Abstract: A method of manufacturing ceramic sintered bodies. A basic starting material corresponding to the sintered body is mixed with compounds which form a melting phase with the starting material during sintering. Prior to the sintering, presintered starting material nuclei having an average crystallite size which corresponds at least three times the average crystallite size of the basic starting material are added to the basic material and melt-forming compounds. The nuclei are added in a quantity of at least 0.1% by weight of the starting material to be sintered. By this addition the grain size and grain distribution in the ceramic sintered body of materials with discontinuous grain growth can be effectively checked and controlled.
    Type: Grant
    Filed: April 8, 1985
    Date of Patent: July 1, 1986
    Assignee: U.S. Philips Corporation
    Inventors: Detlev F. K. Hennings, Rolf P. Janssen, Piet Reijnen
  • Patent number: 4564602
    Abstract: A high permittivity ceramic composition comprises, by weight, 84.25 to 92.4% of substantially stoichiometric barium titanate; substantially stoichiometric calcium zirconate and substantially stoichiometric calcium stannate, the sum of said calcium zirconate and calcium stannate being 9.5 to 13.5%, the weight ratio of said calcium zirconate to calcium stannate being 1:2.5 to 3:1; 0.05 to 0.25% of substantially stoichiometric magnesium titanate; and 0.05 to 2.0% of at least one oxide of rare earth elements.
    Type: Grant
    Filed: September 28, 1984
    Date of Patent: January 14, 1986
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Yasuyuki Nakazawa, Yoshiharu Kato
  • Patent number: 4540676
    Abstract: A low temperature fired ceramic dielectric composition in which the dielectric constant does not vary from its base value of over 2400 by more than 15 percent over a wide temperature range. A base ceramic preparation (a) and a ceramic flux (b), each consisting essentially of metal oxides or precursors thereof to provide in oxide form (a) 98.0 to 99 weight percent barium titanate, from about 0.97 to about 1.54 weight percent niobium pentoxide and from about 0.19 to about 0.32 weight percent cobalt oxide; (b) from about 16 to about 60 weight percent bismuth titanate, about 8 to about 52 weight percent lead titanate, about 18 to about 35 weight percent zinc oxide and about 5 to about 11 weight percent boron oxide. Manganese dioxide or precursor thereof in amount of from about 0 to 0.
    Type: Grant
    Filed: May 23, 1984
    Date of Patent: September 10, 1985
    Assignee: TAM Ceramics
    Inventors: Mike S. H. Chu, Charles E. Hodgkins, Daniel C. Rose
  • Patent number: 4537865
    Abstract: A process for preparing a particulate ceramic material comprising the steps of:(a) adding carbon dioxide or an aqueous solution of a soluble carbonate to first aqueous solution of a nitrate or chloride of Ba, Sr, Ca or Mg in a first vessel to adjust the pH of said first aqueous solution to between 7 and 10 thereby forming a carbonate precipitate;(b) adding an aqueous solution of a soluble hydroxide to a second aqueous solution of a nitrate or chloride of Ti, Zr, Sn or Pb in a second vessel to adjust the pH of said second aqueous solution to between 7 and 10 thereby forming a hydroxide precipitate;(c) combining slurries containing the precipitates formed in said first and second vessels;(d) mixing the combined slurries;(e) passing the slurries through a filter;(f) washing the filter cake with water;(g) drying the filter cake to form a powder;(h) calcining the dried powder; and(i) grinding the calcined powder.
    Type: Grant
    Filed: July 11, 1984
    Date of Patent: August 27, 1985
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Shinsei Okabe, Hiroshi Komatsu, Yukio Hamaji, Shozo Kojima, Yoshiharu Kato
  • Patent number: 4535064
    Abstract: Ceramic compositions having (1) a mixture comprised of barium titanate, zirconium oxide and one or more of cerium oxide, neodymium oxide, lanthanum oxide and an oxide of at least one of lanthanides having atomic numbers 59 to 66 in specific ratios and (2) 0.01 to 0.4% by weight (calculated as Mn based on the weight of the mixture) manganese oxide. Such compositions form reduction-reoxidation type semiconducting capacitors of reduced size and increased capacitance per unit area.
    Type: Grant
    Filed: May 24, 1984
    Date of Patent: August 13, 1985
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Yasunobu Yoneda
  • Patent number: 4522927
    Abstract: A dielectric ceramic composition having a composition represented by the formulaxBaO-yNd.sub.2 O.sub.3 -z(Ti.sub.1-m Zr.sub.m)O.sub.2wherein x+y+z=1.000<m.ltoreq.0.25and x, y, and z are in the molar ratio region surrounded by the points a, b, c, and d which are represented by the following x-y-z coordinates:______________________________________ x y z ______________________________________ a 0.15 0.12 0.73 b 0.15 0.18 0.67 c 0.05 0.18 0.77 d 0.05 0.12 0.
    Type: Grant
    Filed: October 26, 1983
    Date of Patent: June 11, 1985
    Assignees: Mitsubishi Mining, Cement Company Ltd.
    Inventors: Masao Kashima, Noboru Tomuro
  • Patent number: 4500942
    Abstract: Multilayer ceramic capacitors, and in particular NPO class capacitors are produced from dielectric compositions comprising a mixture of BaO, PbO, Nd.sub.2 O.sub.3, Bi.sub.2 O.sub.3, TiO.sub.2 and one of the rare earth oxides selected from the group consisting of Pr.sub.6 O.sub.11 and Sm.sub.2 O.sub.3, the selected rare earth oxide being present in an amount ranging from approximately 10 to 100 wt. % of the amount of Nd.sub.2 O.sub.3 in the mixture. In one embodiment an acrylic binder is added to the mixture to produce ceramic sheets which are screen printed with a Pt-Pd-Au electrode, and then cut into thin layers, stacked, laminated, sintered and terminated to produce a multilayer capacitor having an extremely stable TC and effective dielectric constant as high as 120.
    Type: Grant
    Filed: November 12, 1982
    Date of Patent: February 19, 1985
    Assignee: Ferro Corporation
    Inventor: James M. Wilson
  • Patent number: 4485181
    Abstract: Dielectric ceramic composition containing by weight, 33% to 40% of PbTiO.sub.3 ; 6% to 35% of SrTiO.sub.3 ; 3% to 18% of CaTiO.sub.3 ; 0.5% to 10% of MgTiO.sub.3 ; 6% to 26% of Bi.sub.2 O.sub.3 ; 3% to 15% of TiO.sub.2 ; 0.2% to 4% of ZnO; 0.2% to 5% of Nb.sub.2 O.sub.5 ; 0.1% to 4% of CeO.sub.2 and 0.1% to 2% of Al.sub.2 O.sub.3.
    Type: Grant
    Filed: June 16, 1983
    Date of Patent: November 27, 1984
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Yukio Sakabe
  • Patent number: 4483933
    Abstract: A semiconductor ceramic composition of a barium titanate system comprises a main component containing a minor quantity of one or more semiconductor-forming elements, and additives of manganese oxides and silica incorporated therein, and is characterized by that the main component consists essentially of 30 to 95 mol % of BaTiO.sub.3, 3 to 25 mol % of CaTiO.sub.3, 1 to 30 mol % of SrTiO.sub.3 and 1 to 50 mol % of PbTiO.sub.3. The contents of manganese oxides and silica are 0.03 to 0.15 mol %, preferably, 0.03 to 0.10 mol % in terms of Mn, and 0.5 to 5 mol % in terms of SiO.sub.2, respectively, with respect to one mole of the main component. One or more semiconductor-forming elements are selected from the group consisting of rare earth elements, Nb, Bi, Sb, W and Th, and the content of the elements is 0.2 to 1.0 mol %.
    Type: Grant
    Filed: April 13, 1984
    Date of Patent: November 20, 1984
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Takashi Kobayashi, Motoi Nishii
  • Patent number: 4477581
    Abstract: A high permittivity ceramic composition consisting essentially of a main component expressed by the general formula:(Ba.sub.1-x Me.sub.x) (Ti.sub.1-y Me'.sub.y)O.sub.3whereinMe is Ca and/or Sr, Me' is Zr and/or Sn, x and y are respective mole fractions of Me and Me', 0.06.ltoreq.x .ltoreq.0.14, and 0.06.ltoreq.y .ltoreq.0.14; anda secondary component consisting essentially of 65 to 90 mol % of PbTiO.sub.3, 1 to 10 mol % of Pb.sub.5 Ge.sub.3 O.sub.11 and 1 to 30 mol % of Bi.sub.2 Ti.sub.2 O.sub.7, the content of the secondary component being 5 to 15 weight percent of the amount of the main component.
    Type: Grant
    Filed: August 3, 1983
    Date of Patent: October 16, 1984
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Goro Nishioka, Hiroshi Komatsu, Yukio Sakabe
  • Patent number: 4475144
    Abstract: The present invention provides a dielectric ceramic composition having excellent electric properties and able to be sintered at a temperature between 750.degree. and 1000.degree. C.According to the invention, said composition comprises from 90 to 98% by weight of barium titanate, from 0.5 to 2.5% by weight of lithium oxide and 1.5 to 8% by weight of zinc fluoride.
    Type: Grant
    Filed: January 27, 1983
    Date of Patent: October 2, 1984
    Assignee: LCC.CICE-Compagnie Europeenne de Composants Electroniques
    Inventors: Alain Lagrange, Alain Beauger
  • Patent number: 4468472
    Abstract: A composition for ceramic dielectrics comprising BaO, CeO.sub.2, ZrO.sub.2, CaO and TiO.sub.2 in sintered state. The composition can also contain at least one of MnO.sub.2, Cr.sub.2 O.sub.3, FeO, NiO, and CoO as additive. As the composition is very fine in grain size, and has a prolonged life, it is very suitable for a raw material of such a product as a layer-built capacitor which is used in high electric field.
    Type: Grant
    Filed: December 13, 1982
    Date of Patent: August 28, 1984
    Assignee: Mitsubishi Mining & Cement Company, Ltd.
    Inventors: Masao Kashima, Yasuo Miyashita
  • Patent number: 4459364
    Abstract: A low-fired ceramic dielectric composition, a multilayer capacitor made from such a ceramic dielectric composition provided with silver/palladium electrodes having at least 65 atomic percent silver, and a method of manufacturing such a multilayer capacitor. The ceramic is barium titanate-based and includes Bi.sub.2 O.sub.3, Nb.sub.2 O.sub.5, and TiO.sub.2 to improve sinterability. MnCO.sub.3 is added to increase the insulation resistance. The multilayer capacitor includes high silver-content electrodes to reduce the quantity of expensive noble metals. The multilayer part may be fired at a temperature of 1150.degree. C. or less to yield a capacitor meeting EIA specification X7R. The low firing temperature also inhibits a chemical reaction between bismuth and palladium.
    Type: Grant
    Filed: September 13, 1982
    Date of Patent: July 10, 1984
    Assignee: North American Philips Corporation
    Inventors: Robert T. McSweeney, Stanley A. Long
  • Patent number: 4447549
    Abstract: A D-E hysteresis loop of ferroelectrics known in the art has a square shape when the ferroelectrics are a BaTiO.sub.3 single crystal. Such ferroelectrics are used as a non-linear dielectric element of, for example a pulse generating device. The non-linear dielectric element according to the present invention consists of a polycrystal, which is mainly composed of BaTiO.sub.3 and has the chemical composition expressed by the formula A.sub.y B.sub.z O.sub.3, wherein the molar ratio of y/z ranges from 0.92 to 0.99. The non-linearity is excellent and the temperature dependence of the A.sub.y B.sub.z O.sub.3 composition is considerably low.
    Type: Grant
    Filed: March 22, 1983
    Date of Patent: May 8, 1984
    Assignee: TDK Kabushiki Kaisha
    Inventors: Sho Masujima, Masahide Shibuya, Iwaya Shoichi, Kenichi Umeda, Yasunobu Oikawa, Hisao Abe, Yoshifumi Midori, Shinobu Fujiwara, Nobuaki Kikuchi
  • Patent number: 4429052
    Abstract: With the fabrication of a substrate material in the form of alkaline-earth gallate single crystals it has become possible to grow monocrystalline barium hexaferrite layers of high quality. These thin barium hexaferrite layers on the alkaline-earth gallate substrates are extremely suited as magnetic devices because of their very high uniaxial anisotropy and their small line width. Such magnetic devices can be used for passive microwave components, e.g. as resonance isolators or filters in the centimeter wavelength range or as components in information storage technology, e.g. in magnetic cylindrical domain devices, especially in the field of very small (submicron) cylindrical domains.
    Type: Grant
    Filed: July 6, 1982
    Date of Patent: January 31, 1984
    Assignee: U.S. Philips Corporation
    Inventors: Dieter W. Mateika, Gunter Bartels
  • Patent number: 4400760
    Abstract: A dielectric ceramic composition which has excellent electrical properties and can be sintered at a temperature within the range of 750.degree. C. to 1000.degree. C. contains 85 to 97% by weight of barium titanate, 0.5 to 2.5% by weight of lithium oxide and 2.5 to 12% by weight of cadmium fluoride.
    Type: Grant
    Filed: May 25, 1982
    Date of Patent: August 23, 1983
    Assignee: LCC.CICE - Compagnie Europeenne de Composants Electroniques
    Inventors: Alain Lagrange, Alain Beauger
  • Patent number: 4400759
    Abstract: A dielectric ceramic composition which has excellent electrical properties and can be sintered at a temperature within the range of 750.degree. C. to 1000.degree. C. contains 90 to 98% by weight of barium titanate, 0.5 to 2.5% by weight of lithium oxide and 1.5 to 8% by weight of cupric fluoride.
    Type: Grant
    Filed: May 25, 1982
    Date of Patent: August 23, 1983
    Assignee: LCC-CICE-Compagnie Europeenne de Composants Electroniques
    Inventors: Alain Lagrange, Alain Beauger
  • Patent number: 4394456
    Abstract: A temperature-compensating ceramic dielectric mainly comprises a composition consisting essentially of 35 to 65 wt % of neodymium titanates (Nd.sub.2 Ti.sub.2 O.sub.7), 10 to 35 wt % of barium titanates (BaTiO.sub.3), 10 to 35 wt % of titanium oxide (TiO.sub.2), 1 to 6 wt % of bismuth oxide (Bi.sub.2 O.sub.3) and 1 to 10 wt % of lead oxide (Pb.sub.3 O.sub.4), and contains 1 to 6 wt % of zinc oxide (ZnO) and 1 to 6 wt % of silicon oxide (SiO.sub.2). Up to 50 atom % of neodymium in neodymium titanates (Nd.sub.2 Ti.sub.2 O.sub.7) may be replaced with at least one element of the other rare earth elements except for Nd.
    Type: Grant
    Filed: April 7, 1982
    Date of Patent: July 19, 1983
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Yukio Sakabe, Goro Nishioka
  • Patent number: 4392180
    Abstract: Thick film dielectric compositions suitable for screen-printing comprising a substituted perovskite, an inorganic dopant, and a low temperature-devitrifiable frit or glass. Upon firing the dielectric composition is highly hermetic.
    Type: Grant
    Filed: April 29, 1982
    Date of Patent: July 5, 1983
    Assignee: E. I. Du Pont de Nemours and Company
    Inventor: Kumaran M. Nair
  • Patent number: 4386985
    Abstract: A ceramic dielectric based on the oxides of Ba, Ti, Ca, and Zr is doped with magnesium oxide and nickel oxide (or other base metal). The dielectric composition can be sintered with nickel (or other base metal) electrodes in a broad range of reducing atmospheres to provide capacitors with stable and uniformly good dielectric properties.
    Type: Grant
    Filed: June 18, 1981
    Date of Patent: June 7, 1983
    Assignee: North American Philips Corporation
    Inventor: Roger T. Dirstine
  • Patent number: 4379854
    Abstract: A mixture of powders of barium titanate, a Curie point shifter and a lead titanate-bismuth titanate metal oxide flux which may be fired in a single step at 1800.degree. F. to 2100.degree. F. to produce a dense ceramic body with high dielectric constant. The ceramic is adapted to monolithic, multilayer ceramic capacitors. The low firing temperature minimizes the requirements of high temperature noble electrode material.
    Type: Grant
    Filed: February 6, 1981
    Date of Patent: April 12, 1983
    Assignee: Erie Technological Products, Inc.
    Inventor: Jakob C. K. Soong
  • Patent number: 4357426
    Abstract: A humidity sensitive ceramics comprises a sintered body consisting essentially of a semiconductive compound oxide with a perovskite structure and a compound oxide, said semiconductive compound oxide having a composition expressed by the general formula (I):A.sub.1-x A'.sub.x BO.sub.3-.delta.. . . (I)wherein A is at least one element selected from the group consisting of rare earth elements with atomic numbers 57 to 71, yttrium and hafnium, A' is at least one element selected from the group consisting of alkaline-earth metals, B is at least one element selected from the group consisting of transition elements with atomic numbers 23 to 30, x is a mole fraction and takes a value of the following range, 0.ltoreq.x.ltoreq.1, and .delta. is a non-stoichiometric parameter, said compound oxide having a composition expressed by the general formula (II):AMO.sub.3 . . .
    Type: Grant
    Filed: December 17, 1981
    Date of Patent: November 2, 1982
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Michihiro Murata, Shinsei Okabe
  • Patent number: 4353047
    Abstract: The present invention provides a dielectric material adapted for microwave integrated circuits (MIC) and an electric circuit making use of said dielectric material. More particularly, an oxide dielectric material principally consisting of (1-x)BaO.xTiO.sub.2 (0.7.ltoreq.x.ltoreq.0.95) and containing both 0.007 to 0.7 weight % of manganese and 0.037 to 3.7 weight % of zirconium, has a large dielectric constant, a small dielectric loss and a small temperature coefficient of dielectric constant and is uniform over a broad range, and especially it is possible to easily manufacture a substrate having a uniform dielectric constant and a uniform dielectric loss. Transistors and MIC's employing such substrates can attain uniform and excellent high-frequency characteristics.
    Type: Grant
    Filed: April 28, 1981
    Date of Patent: October 5, 1982
    Assignee: Nippon Electric Co., Ltd.
    Inventors: Tsutomu Noguchi, Yuji Kajiwara, Masanori Suzuki, Hideo Takamizawa
  • Patent number: 4347167
    Abstract: A semiconducting internal boundary layer ceramic composition having a fine grain structure suitable for use in thin-layer multilayer capacitors is made in one step by firing a mixture comprising a major amount of finely divided strontium titanate, a minor amount of a compound containing either strontium or titanium, or an element functionally equivalent thereto, a minor amount of a semiconductor forming ingredient (dopant), the identity of which depends on whether the mixture is rich in strontium or in titanium, and a minor amount of a counterdopant selected from cuprous oxide or silver oxide. When the mixture is rich in titanium, the chemical doping agent used to produce semiconductivity is an oxide of a trivalent metal selected from bismuth, boron, iron, antimony, lanthanum and the rare earth and transition metals. When the mixture is rich in strontium, the dopant is an oxide of a pentavalent or hexavalent metal selected from tungsten (+6), niobium (+5), tantalum (+5), and molybdenum (+6).
    Type: Grant
    Filed: October 1, 1980
    Date of Patent: August 31, 1982
    Assignee: University of Illinois Foundation
    Inventors: David A. Payne, Sang M. Park
  • Patent number: 4335216
    Abstract: Low temperature fired dielectric ceramic compositions are prepared by firing, at temperatures between about 1000.degree. C. and about 1150.degree. C., a base ceramic preparation comprising barium titanate, strontium titanate, barium zirconate, titanium dioxide and manganese dioxide mixed with a glass frit comprising zinc oxide, silicon dioxide, boron oxide, lead oxide, bismuth tioxide, and cadmium oxide. The resulting dielectric ceramic composition is useful to form multilayer ceramic capacitors.
    Type: Grant
    Filed: May 1, 1981
    Date of Patent: June 15, 1982
    Assignee: TAM Ceramics, Inc.
    Inventors: Charles E. Hodgkins, Mark J. Giermek