Abstract: The present invention provides a semiconducting ceramic which possesses a dielectric strength of 800 V/mm or more and a specific resistance at room temperature of 100 &OHgr;·cm or less, the specific resistance at room temperature undergoing substantially no time-course change. The semiconducting ceramic is formed of a sintered semiconducting material containing barium titanate, wherein the average grain size of the semiconducting ceramic is about 1.0 &mgr;m or less and the relative spectral intensity ratio represented by BaCO3/BaO, which is determined by XPS at the surface of the ceramic, is 0.5 or less.

Abstract: A joining material for an electronic component is disclosed. The component has a plurality of functional layers, each selected from a magnetic layer and dielectric layer and the functional layers are joined with each other. The joining material is comprises a glass and a composition of a mol % of ZnO, b mol % of BaO and c mol % of TiO2 (a=12-45, b=4-45, c=18-81, a+b+c=100), wherein 0.1 to 10 weight parts of the glass is added to 100 weight parts of the composition.

Abstract: A perovskite compound of the formula, (Na½Bi½)1−xMx(Ti1−yM′y)O3±z, where M is one or more of Ca, Sr, Ba, Pb, Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and M′ is one or more of Zr, Hf, Sn, Ge, Mg, Zn, Al, Sc, Ga, Nb, Mo, Sb, Ta, W, Cr, Mn, Fe, Co and Ni, and 0.01<x<0.3, and 0.01<y<0.3, and z<0.1 functions as an electromechanically active material. The material may possess electrostrictive or piezoelectric characteristics.

Abstract: A monolithic electronic element is fabricated from a semiconducting ceramic, which element can be produced through firing at 1000° C. or lower and exhibits a satisfactory PTC characteristic even when the element is produced through reoxidation at low temperature. The monolithic electronic element 1 includes a sintered laminate 3 formed of alternatingly stacked semiconducting ceramic layers 5 and internal electrode layers 7, and external electrodes 9 formed on the sintered laminate, wherein the semiconducting ceramic layers 5 comprise sintered barium titanate containing boron oxide; an oxide of at least one metal selected from among barium, strontium, calcium, lead, yttrium and a rare earth element; the boron oxide being incorporated in an amount, as reduced to atomic boron (B), satisfying the following relationships: 0.001≦B/&bgr;≦0.50 and 0.5≦B/(&agr;−&bgr;)≦10.

Abstract: Bis(dipivaloylmethanato)diisobutoxytitanium or bis(dipivaloylmethanato)-di(2,2 -dimethyl-1-propoxytitanium per se, or as used as a raw material in a MOCVD process, as is or as a solution in an organic solvent, for example, tetrahydrofuran, produces a dielectric thin film of a fine texture having a film thickness which is proportional to the deposition time and the concentration of the solution.

Abstract: A dielectric ceramic composition exhibiting a firing temperature of 1300° C. or less, a dielectric constant of 200 or more, a low loss under a high-frequency-high-voltage alternating current, high insulation resistance at high electric field strength, characteristics satisfying the B and X7R characteristics, and excellent high-temperature load properties. It contains a barium titanate solid solution and additive components, and is represented by the formula, ABO3+aR and bM, wherein ABO3 represents the barium titanate solid solution having a perovskite structure; R represents an oxide of at least one metal, M represents an oxide of at least one other metal, a and b respectively represent the molar ratios of single metal oxides and a sintering additive, wherein 0.950≦A/B (molar ratio)≦1.050, 0.12<a≦0.30, and 0.04≦b≦0.30.

Abstract: A ceramic for the PTC thermistor having a resistivity at room temperature of 5 &OHgr;·cm or less, static withstanding voltage of 60 V/mm or more and temperature resistance coefficient of 9.0 %/° C., having small dispersion of the resistance, is composed of principal components of about 30 to 97 mol % of BaTiO3, about 1 to 50 mol % of PbTiO3, about 1 to 30 mol % of SrTiO3 and about 1 to 25 mol % of CaTiO3 (the total content of them being 100 mol %), as well as about 0.1 to 0.3 mole of Sm, about 0.01 to 0.03 mole of Mn and 0 to about 2.0 mole of Si relative to 100 moles of the principal components, the composite material being preferably heat-treated in an oxidative atmosphere after being fired in a reducing or neutral atmosphere for obtaining the ceramic.

Abstract: A ceramic capacitor containing at least one dielectric layer formed from a dielectric ceramic composition comprising a sintered body containing ceramic particles having a core/shell structure in an amount of 15% or more based on the total ceramic particles of the sintered body, the core/shell structured particle being composed of a core portion, which is BaTiO3 crystal, and a shell portion surrounding the core portion, which is made of a solid solution comprising BaTiO3 as a major component, has excellent temperature characteristics and a long life-time.

Abstract: The present invention provides a dielectric ceramic composition, a capacitor using the composition and the producing method, of having a lower dielectric loss and a stable characteristics in high frequency bandwidth, and enabling to use a base metal or a carbon-based material as an electrode material by allowing sintering at a low temperate, thereby resulting in lower cost.

Abstract: A dielectric ceramic composition of the present invention is a mixture of barium titanate as a main component whose Ba/Ti molar ratio ranging from 1.001 to 1.05 and sub components comprising, at least 0.5 to 5.0 mol of Mg in the form of MgO, 0.1 to 3.0 mol of Dy in the form of Dy2O3, 0.01 to 0.4 mol of Mn in the form of Mn3O4, 0.01 to 0.26 mol of V in the form of V2O5, 0.3 to 3.5 mol of Si in the form of SiO2 and 0.01 to 3.0 mol of Al in the form of Al2O3 per 100 mol of the barium titanate. Even when external electrodes are made of base metal such as copper or the like, a multilayer capacitor whose dielectric layers are not reduced and have high insulation resistance can be obtained by using the dielectric ceramic composition of the present invention.

Abstract: The composition of dielectric ceramics is formed in that a main component is expressed with a general formula of xBaO·yNd2O3·zTiO2 (provided that the general formula has the relation of 6≦x≦23, 13≦y≦30, 64≦z≦68 and x+y+z=100), and in relation with the main components, sub-components are contained of Cu oxides 0.1 to 3.0 wt % in terms of CuO, Zn oxide 0.1 to 4.0 wt % in terms of ZnO, and B oxide 0.1 to 3.0 wt % in term of B2O3. It is preferable that Ag 0.3 to 1.5 wt % is contained as the sub-component.

Abstract: A sol-gel precursor mixture for forming a perovskite ferroelectric material and a method for forming a ferroelectric material are provided. The precursor solution comprises a sol-gel formulation of a mixture of an inorganic salt of at least one metal, and metal-organic compounds of other constituent metals in a suitable pH controlled aqueous solvent mixture to form a stable, clear sol-gel mixture. The precursor solution and method provides for formation of thin layers of other ferroelectric dielectrics and piezoelectric materials, particularly lead containing materials, for application including non-volatile DRAMs, optoelectronic devices relying on non-linear optical properties, and piezoelectric devices, and is compatible with processing for submicron device structures for bipolar, CMOS or bipolar CMOS circuits.

Abstract: A dielectric composition containing at least calcium titanate, strontium titanate, and barium titanate, wherein at least the molar ratios of composition of the three are such that the molar ratio of composition (P) of calcium titanate is 0.5 to 0.85, the molar ratio of composition (Q) of strontium titanate is 0.05 to 0.4, and the molar ratio of composition (R) of barium titanate is 0.1 to 0.2 (where, P+Q+R=1).

Abstract: The piezoelectric ceramic composition of the present invention contains, as a main component, a material having a composition represented by Formula: CaMXBi4−xTi4−X(Nb1−ATaA)XO15, where M is at least one element selected from the group consisting of Ca, Sr, and Ba; 0.0≦A≦1.0; and 0.0≦X≦0.6.

Abstract: Disclosed is a dielectric material comprising: a main ingredient having a composition represented by xBaO-yRE2O3-zTiO2, wherein RE represents at least one rare earth element, and x+y+z=100 mol %; at least one alkali metal oxide; and an ingredient derived from an oxygen supplying agent which releases oxygen on heating.

Abstract: A dielectric ceramic composition comprising 3BaO.5TiO2.3Nb2O5 (Ba3Ti5Nb6O28) as a main component and at least one selected from, as a minor component, (b-1) sintering auxiliary selected from the group consisting of a boron-containing glass compound, CuO, ZnO or mixtures thereof, or (b-2) additives selected from the group consisting of V2O5, SnO2, MgO, NiO, Sb2O3, Bi2O3, LiF, Ag2O or mixtures thereof, and mixtures of (b-1) and (b-2), and its preparation process are disclosed.

Abstract: In a start powder mixture of magnesium zinc titanate and a barium lithium boro-silicate flux, it is discovered that the addition of lithium to the flux enables the manufacture of multilayer ceramic capacitors using the powder mixture, that perform to the COG standard including an accelerated life test. This addition of lithium also makes possible the sintering to maturity of COG multilayer capacitors at temperatures as low as 950° C., which in turn allows the use of silver-palladium alloy buried electrodes of high silver and low palladium content which in turn lead to higher capacitor Q and lower manufacturing costs.

Abstract: A high-frequency dielectric ceramic composition comprises Ba, Ti, Nd, Sm, and Pr as primary components represented by the formula xBaO-yTiO2-z{(1−m−n)Nd2O3-mSm2O3-nPr2O11/3} wherein coefficients x, y, z, m, and n represent molar ratios, x+y+z=1, 0<m≦0.40, 0<n≦0.25, and the coefficients x, y, and z are in an area bounded by points A, B, C and D in a ternary diagram, wherein point A is at (x=0.16, y=0.70, z=0.14), point B is at (x=0.16, y=0.68, z=0.16), point C is at (x=0.13, y=0.68, z=0.19), and point D is at (x=0.13, y=0.70, z=0.17); wherein the composition further comprises a Bi compound in an amount of more than 0 parts by weight to about 9 parts by weight on the basis of Bi2O3 and an Fe compound in an amount of more than 0 parts by weight to about 0.

Abstract: A monolithic ceramic electronic component includes a laminate including a plurality of ceramic layers obtained by sintering a ceramic raw material powder, and a plurality of internal electrodes located between the ceramic layers and obtained by sintering a metallic powder. The ceramic layers have a thickness of about 3 &mgr;m or less and are composed of ceramic grains having an average particle diameter of more than about 0.5 &mgr;m, the particle diameter of the ceramic grains in the thickness direction of the ceramic layers is smaller than the thickness of the ceramic layers, and the internal electrodes have a thickness of about 0.2 to 0.7 &mgr;m.

Abstract: A dielectric material comprising: a main component represented by the composition formula (1-&agr;) {(Ba1−xCaxO)A (Ti1−yZryO2)B}·&agr;L2O3, wherein 0.0005≦&agr;≦0.015, 0.03≦x≦0.15, 0.01 ≦y≦0.25, 1.00≦A/B≦1.02, L: at least one component selected from the group consisting of lanthanide; and subsidiary components including 0.01 to 1.0% by weight of MnO and 0.005 to 0.5% by weight of an oxide containing Al2O3 as a major component; and further 0.01 to 0.4 total % by weight of at least one oxide selected from the group of oxides of V, Nb, Ta, Mo and W, and a small size, large capacitance, multi-layer ceramic chip capacitor comprising said dielectric material.

Abstract: A high rigidity glass-ceramic substrate for a magnetic information storage medium has a ratio of Young's modulus to specific gravity within a range from 37 to 63 and comprises Al2O3 within a range from 10% to less than 20%. A predominant crystal phase of the glass-ceramic substrate consists of one or more crystals selected from the group consisting of &bgr;-quartz, &bgr;-quartz solid solution, enstatite, enstatite solid solution, forsterite and forsterite solid solution.

Abstract: Barium titanate-based particles having a coating comprising an oxide, hydrous oxide, hydroxide or organic acid salt of a metal other than barium or titanium, wherein at least 90 percent of said particles have a particle size less than 0.9 micrometer when said particles are dispersed by high shear mixing, useful in the fabrication of thin, fine-grained dielectric layers for multilayer ceramic capacitors with high breakdown voltage.

Abstract: The present invention provides barium titanate semiconductive ceramic having low specific resistance at room temperature and high withstand voltage, which fully satisfies the demand for enhancing withstand voltage. The average ceramic grain size of the barium titanate semiconductive ceramic is controlled to about 0.9 &mgr;m or less. By this control, the ceramic possesses low specific resistance at room temperature and high withstand voltage fully satisfying a recent demand for enhancing withstand voltage and may suitably used for applications such as controlling temperature and limiting current, or in exothermic devices for constant temperature. Accordingly, the barium titanate semiconductive ceramic enables an apparatus using the same to have enhanced performance and reduced size.

Abstract: A ceramic for the PTC thermistor having a resistivity at room temperature of 5 &OHgr;·cm or less, static withstanding voltage of 60 V/mm or more and temperature resistance coefficient of 9.0%/° C., having small dispersion of the resistance, is composed of principal components of about 30 to 97 mol % of BaTiO3, about 1 to 50 mol % of PbTiO3, about 1 to 30 mol % of SrTiO3 and about 1 to 25 mol % of CaTiO3 (the total content of them being 100 mol %), as well as about 0.1 to 0.3 mole of Sm, about 0.01 to 0.03 mole of Mn and 0 to about 2.0 mole of Si relative to 100 moles of the principal components, the composite material being preferably heat-treated in an oxidative atmosphere after being fired in a reducing or neutral atmosphere for obtaining the ceramic.

Abstract: The dielectric ceramic composition is composed of a sintered body of ceramic particles containing Ba2Ti5O11 as a major component. The ceramic particles may contain Ag in the form of solid solution at the rate of 0.2% to 3.0% by mole. the ceramic particles may further contain Ba2TiSi2O8 so the BaTi5O11/Ba2TiSi2O8 ratio is 1.5 to 9 BaTi5O11 to 1 Ba2TiSi2O8. The dielectric ceramic composition can be sintered at a low enough temperature to enable a highly conductive metal such as Ag, Cu or the like to be burned and sintered integrally.

Abstract: A dielectric ceramic composition comprising as main components barium titanate and a component M (wherein M is at least one type of component selected from manganese oxide, iron oxide, cobalt oxide, and nickel oxide) and having a ferroelectric phase region, wherein the concentration of the component M in the ferroelectric phase region changes from the outside toward the center. The concentration of the component M in the ferroelectric phase region is higher at the outside compared with near the center of the ferroelectric phase region. It is possible to realize a multi-layer capacitor which can satisfy both of the X7R characteristic (EIA standard) and B characteristic (EIAJ standard) of the temperature characteristic of the electrostatic capacity, has little voltage dependency of the electrostatic capacity and the insulation resistance, is superior in insulation breakdown resistance, and can use Ni or a Ni alloy as the internal electrode layer.

Abstract: Temperature compensating capacitors and dielectric ceramic powder compositions therefor are disclosed, based upon a dual-component barium borate and zinc silicate sintering flux. The precursor dielectric ceramic powders can include (1−m) BaTiO3+(m) CaZrO3 (BTCZ composition), with m ranging from 20 mole percent to 35 mole percent, xBaO.yTiO2.zRE2O3 (rare earth composition), (RE being a rare earth metal), with x ranging from 0 m % to 30 m %, y ranging from 45 m % to 95 m %, and z ranging from 5 m % to 50 m %, or a combination of the BTCZ and rare earth composition in varying weight percents. The effective range of B2O3 in the barium borate ranges from 0.029 w % to 2.75 w % of the total dielectric composition, whereas the effective range of SiO2 in the zinc silicate ranges from 0.08 w % to 1.42 w % of the total dielectric composition.

Abstract: A dielectric ceramic composition containing a primary component represented by the following formula: {BaO}mTiO2+&agr;M2O3+&bgr;R2O3+&ggr;BaZrO3+gMgO+hMnO wherein M2O3 is at least one of Sc2O3 or Y2O3; R2O3 is at least one member selected from the group consisting of Eu2O3, Gd2O3, Tb2O3. Dy2O3, Ho2O3, Er2O3, Tm2O3 and Yb2O3; &agr;, &bgr;, &ggr;, g or h represent a mole ratio and satisfy specified relations; and silicon oxide as an auxiliary component in an amount of 0.2-5.0 mol as SiO2, with respect to 100 mol of the primary component.

Abstract: The present invention provides a dielectric ceramic composition whose electrostatic capacity has an excellently low temperature dependence; which can be fired in a reducing atmosphere; and which is advantageously used in a laminated ceramic capacitor having an internal electrode formed of a base metal such as nickel or nickel alloy. The dielectric ceramic composition is represented by the following formula: {Ba1−xCaxO}mTiO2+&agr;MgO+&bgr;MnO, wherein 0.001≦&agr;≦0.05; 0.001≦&bgr;≦0.025; 1.000<m≦1.035; and 0.02≦x≦0.15.

Abstract: A method of producing a PTC semiconducting ceramic which entails preparing the calcine of a main composition of barium titanate-based semiconductor containing substantially no Si and having BaTiO3 as a main component thereof, preparing additive compositions, Ba2TiSi2O8 and BanTimOn+2m (1≦n≦4,2≦m≦13, n<m), respectively, compounding the calcine of the main composition and the additive compositions and mixing them, and then subjecting them to formal firing. The obtained product exhibits excellent electrical characteristics, which are not influenced by fluctuations in conditions of production.

Abstract: A preferred embodiment of this invention comprises a conductive lightly donor doped perovskite layer (e.g. lightly La doped BST 34), and a high-dielectric-constant material layer (e.g. undoped BST 36) overlaying the conductive lightly donor doped perovskite layer. The conductive lightly donor doped perovskite layer provides a substantially chemically and structurally stable electrical connection to the high-dielectric-constant material layer. A lightly donor doped perovskite generally has much less resistance than undoped, acceptor doped, or heavily donor doped HDC materials. The amount of donor doping to make the material conductive (or resistive) is normally dependent on the process conditions (e.g. temperature, atmosphere, grain size, film thickness and composition). This resistivity may be further decreased if the perovskite is exposed to reducing conditions.

Abstract: Laminated ceramic parts such as a laminated ceramic condenser and a laminated LC filter are formed by using a temperature compensating dielectric ceramic composition having a high relative dielectric constant and a high Q value, and which can be sintered at a relatively low temperature during the manufacturing processes, without causing any undesired variations in ceramic properties during the sintering treatment. The composition includes 100 parts by weight of a main component having a mole composition ratio (BaO, TiO2, Re2O3) shown in a ternary composition diagram indicated by an area surrounded by point A (39.5. 59.5, 1), point B (1, 59.5, 39.5), point C (1, 85, 14) and point D (14, 85, 1); about 25 parts by weight or less of a lead free B2O3—SiO2 glass; at least one of V oxide (the content as V2O5 being about 10 parts by weight or less) and W oxide (the content as WO3 being about 20 parts by weight or less).

Abstract: A barium titanate-based semiconductive ceramic composition for facilitating miniaturization of thermistor devices by improving rush current resistance characteristics is provided. In the barium titanate-based semiconductive ceramic composition, a fraction of the Ba in BaTiO3 as the major component is replaced with 1 to 25 mole percent of Ca, 1 to 30 mole percent of Sr, and 1 to 50 mole percent of Pb; and wherein to 100 mole percent of the major component, the semiconductivity-imparting agent is added in an amount of 0.2 to 1.0 mole percent as a converted element content, and the additive comprises manganese oxide in an amount of 0.01 to 0.10 mole percent as a converted Mn content, silica in an amount of 0.5 to 5 mole percent as a converted SiO2 content, and magnesium oxide in an amount of 0.028 to 0.093 mole percent as a converted Mg content.

Abstract: A dielectric porcelain composition according to the present invention is composed of a main component expressed in a general formula of xBaO·y((1−t)Nd2O3·tSm2O3)·zTiO2, where 6≦x≦23, 13≦y≦30, 64≦z≦68, 0≦t<1 and x+y+z=100. The main component contains a sub component containing Cu oxide in the range of 0.1 to 3.0 wt % in terms of CuO and glass composition in the range of 2.0 to 10 wt %. Further, 90 wt % or more of the glass composition is at least one selected from SiO2, B2O3, MgO, BaO, SrO, ZnO and CaO, in the ranges of: 5 wt %≦SiO2≦15 wt %; 15 wt %≦B2O3≦25 wt %; 50 wt %≦(MgO+BaO+SrO+ZnO+CaO)≦80 wt %; 90 wt %≦(SiO2+B2O3+MgO+BaO+SrO+ZnO+CaO)≦100 wt %.

Abstract: An object of the present invention is to provide a dielectric ceramic composition in which a volume changing ratio of the electrostatic capacity is within ±0.3% over a wide temperature range of −55 to +125° C., it satisfies the NPO characteristics regulated by EIA standard, the dielectric constant is high as 75 or more and the Q value of 2000 or higher and it is capable of subjecting to sintering at a low temperature of 1100 to 1150° C. The dielectric ceramic composition of the present invention is a (Ba Ca Sr Nd Gd)TiO3 series composition and to the composition was added and contained 1.0 to 5.0% by weight of ZnSiTiO5, 1.0 to 5.0% by weight of ZnSi2TiO7 or 1.0 to 5.0% by weight of CaSiTiO5 based on the weight of the composition.

Abstract: The present invention provides barium titanate powder having a withstanding voltage of 800 V/mm or more and a specific resistance at room temperature of 100 .OMEGA..multidot.cm or less, the specific resistance at room temperature undergoing substantially no time-course change. Barium titanate of the powder of the present invention assumes a cubic crystal system. The powder has a particle size of about 0.1 .mu.m or less; the ratio represented by BaCO.sub.3 /BaO as obtained through XPS is about 0.42 or less; the lattice constant is about 0.4020 nm or more; and the ratio represented by Ba/Ti is about 0.988-0.995.

Abstract: The present invention provides a barium titanate-based semiconducting ceramic which exhibits excellent PTC characteristic and which can be fired at a temperature lower than 1000.degree. C. The present invention also provides an electronic element fabricated from the ceramic. The semiconducting ceramic contains, in a semiconducting sintered barium titanate; boron oxide; an oxide of at least one of barium, strontium, calcium, lead, yttrium and a rare earth element; and an optional oxide of at least one of titanium, tin, zirconium, niobium, tungsten and antimony in which the atomic boron is0.005.ltoreq.B/.beta..ltoreq.0.50 and1.0.ltoreq.B/(.alpha.-.beta.).ltoreq.4.0wherein .alpha. represents the total number of atoms of barium, strontium, calcium, lead, yttrium and rare earth element contained in the semiconducting ceramic, and .beta. represents the total number of atoms of titanium, tin, zirconium, niobium, tungsten and antimony contained in the semiconducting ceramic.

Abstract: A dielectric ceramic composition which has a high dielectric constant and a high Q value, as well as excellent temperature stability, and which is sinterable at a relatively low temperature. The dielectric ceramic composition of the present invention is formed of a mixture of a BaO--TiO.sub.2 --REO.sub.3/2 --BiO.sub.3 ceramic composition wherein RE represents a rare earth element, and a glass composition. The glass composition contains about 13-50 wt. % SiO.sub.2, about 3-30 wt. % B.sub.2 O.sub.3, about 40-80 wt. % alkaline earth metal oxide and about 0.1-10 wt. % Li.sub.2 O.

Abstract: A high purity dielectric ceramic composition is disclosed. This composition provides improved electrical properties in the form of ultra-high electrical Q, a low (T.sub.f) property and a high dielectric constant (K). This composition is also amenable to large scale manufacturing processes and operations. The composition provides a multi-oxide dielectric with BaO--Nd.sub.2 O--Sm.sub.2 O.sub.3 --TiO.sub.2 --La.sub.2 O.sub.3 Bi.sub.2 O.sub.3 and ZnO as constituents. The composition materials effectively provide these desirable properties in a custom composition of various oxide materials advantageously including samarium oxide (Sm.sub.2 O.sub.3).

Abstract: The ceramic electronic part has a ceramic material and an electrode formed on the surface of the ceramic material. The ceramic material has rod-shaped particles formed projecting from the surface thereof, the rod-shaped particles having an aspect ratio (a long axis/short axis ratio) of from 3 to 30. The ceramic material is formed using a dielectric ceramic composition containing, as a major component, a composite oxide which, for example, comprises an oxide of barium (Ba), an oxide of titanium (Ti) an oxide of at least one rare earth element and one or both of an oxide of bismuth (Bi) and an oxide of lead (Pb).

Abstract: A dielectric ceramic composition including a compound of the BaTiO.sub.3 --Nb.sub.2 O.sub.5 --Co.sub.3 O.sub.4 group. The composition contains 1.1-1.4 mo. % of in total Nb.sub.2 O.sub.5 and Co.sub.3 O.sub.4 wherein the molar ration of Nb.sub.2 O.sub.5 to Co.sub.3 O.sub.4 is between 4.4 and 5.0. The composition contains 0.02-0.06% by weight of MnCO.sub.3, 0.02-0.25% by weight of Nd.sub.2 O.sub.3, 0.02-0.10% by weight of Y.sub.2 O.sub.3 and 0.05-0.15% by weight of Al.sub.2 O.sub.3 with respect to the weight of the composition. Laminated ceramic capacitors including the dielectric ceramic material show a capacity changing ration which is less than 15% in the temperature range between -55.degree. C. and +125.degree. C., a dielectric loss which is smaller than 3.5% and a dielectric constant which is 4000 or more.

Abstract: A multilayer ceramic capacitor is produced by using a dielectric ceramic composition prepared by allowing a composition represented by the composition formula (Ba.sub.1-x Ca.sub.x)TiO.sub.3 (provided that 0.005.ltoreq.x.ltoreq.0.05), namely, 0.5-5 mol % to contain an additive of MnO--CoO--MgO at 0.2 to 2 mol % and a Y.sub.2 O.sub.3 additive at 2.5 mol % or less and further adding a glass component comprising SiO.sub.2 --Al.sub.2 O.sub.3 --BaO--CaO--Ta.sub.2 O.sub.5 at 0.5 to 5 mol % to the resulting composition. The dielectric ceramic composition can be prepared into slurry well by using an aqueous binder and can be sintered well with no occurrence of any crack even by fast firing, and even after barrel treatment, additionally, chipping hardly occurs in the dielectric ceramic composition. Accordingly, the resulting multilayer ceramic capacitor exerts an excellent breakdown voltage even at a large size and can therefore satisfy the JIS B characteristic.

Abstract: A barium titanate-based semiconducting ceramic, which contains BaTiO.sub.3 as a main component thereof, and Ba.sub.2 TiSi.sub.2 O.sub.8 and Ba.sub.n Ti.sub.m O.sub.n+2m (1.ltoreq.n.ltoreq.4, 2.ltoreq.m.ltoreq.13, n.ltoreq.m), respectively, as trace-phase compositions, wherein the ratio of the contents of about Ba.sub.2 TiSi.sub.2 O.sub.8 and Ba.sub.n Ti.sub.m O.sub.n+2m (Ba.sub.2 TiSi.sub.2 O.sub.8 /Ba.sub.n Ti.sub.m O.sub.n+2m) as the trace-phase compositions is in the range of about 0.5 to 80.0. This semiconductive ceramic exhibits excellent voltage resistance and ensures high reliability as a product element. Moreover, it has a suitable room temperature resistivity .rho.25 for functioning as a product element.

Abstract: The present invention provides a dielectric ceramic composition containing 100 parts by weight of essential component represented by (BaO).sub.m TiO.sub.2 +M.sub.2 O.sub.3 +R.sub.2 O.sub.3 +BaZrO.sub.3 +MgO+MnO (wherein M.sub.2 O.sub.3 represents Sc.sub.2 O.sub.3 and/or at least one of Eu.sub.2 O.sub.3, Gd.sub.2 O.sub.3, Tb.sub.2 O.sub.3 and Dy.sub.2 O.sub.3) and 0.2 to 3.0 parts by weight of a side component represented by Li.sub.2 O--(Si, Ti)O.sub.2 --MO (wherein MO represents Al.sub.2 O.sub.3 and or ZrO.sub.2) or SiO.sub.2 --TiO.sub.2 --XO (wherein XO represents at least one of BaO, CaO, SrO, MgO, ZnO and MnO), and a ceramic capacitor using the same.

Abstract: A ceramic substrate comprises having two or more functional portions separated from each other, by providing a first region comprising a first dielectric porcelain having an insulating layer at the crystal grain boundaries of a semiconductor porcelain containing a semiconductivizing agent and a second region comprising a second dielectric porcelain with different dielectric constant from the first dielectric porcelain through the difference in amount or kind of the semiconductivizing agent from the first region.

Abstract: A dielectric ceramic composition is comprised of a crystal structure phase of a tungsten bronze form, one titanate-barium phase or more titanate-barium phases selected from Ba.sub.2 Ti.sub.9 O.sub.20, BaTi.sub.2 O.sub.5, BaTi.sub.4 O.sub.9 and Ba.sub.4 Ti.sub.13 O.sub.30, and a fine crystal phase comprising an oxide of each of at least B, Ag and Mn, in which the crystal structure phase of the tungsten bronze form is formed with a limited amount of a compound oxide of Ba, Nd and Ti as a basic component and contains a limited amount of each of an oxide of at least Bi, Pb, Zn and Si. The dielectric ceramic composition can be fired at a temperature of 920.degree. C. or lower and sintered forming into a ceramic electronic part which has remarkably high dielectric characteristics, such as the dielectric constant of 60 or higher, the Q factor of 1,000 or higher, and the temperature coefficient .tau..epsilon.r of the relative dielectric constant .epsilon.r of .+-.60 ppm/.degree. C. or smaller.

Abstract: A high-dielectric lead-free paste serves for the manufacture of at least one area having a high dielectric constant in a ceramic multilayer circuit. The lead-free dielectric paste is basically made of barium titanate nano powder of a suitable particle size and sinters at temperatures below 1000.degree. C., preferably in a range of 800.degree. C. to 1000.degree. C.

Abstract: A dielectric ceramic composition of the invention comprises as major components 94 to 99 mol % of barium titanate, calculated as BaTiO.sub.3, 0.05 to 3 mol % of tantalum oxide, calculated as Ta.sub.2 O.sub.5, 0.05 to 3 mol % of niobium oxide, calculated as Nb.sub.2 O.sub.5, and 0.5 to 3 mol % of zinc oxide, calculated as ZnO, and further contains as a subordinate additive at least one of calcium zirconate, strontium zirconate and barium zirconate in a total amount of 0.2 to 5% by weight per 100 mol % of said major components, calculated as CaZrO.sub.3, SrZrO.sub.3 and BaZrO.sub.3, respectively. The dielectric ceramic composition having a high dielectric constant is most unlikely to delaminate and is suitable for a multilayered ceramic capacitor. This dielectric ceramic composition has also little, if any, capacitance change and dielectric loss over a wide temperature range of -55.degree. C. to +150.degree. C.

Abstract: Disclosed is a sintered piezoelectric ceramic which is resistant to the high voltage for polarization with no dielectric breakdown and has good moisture resistance. When a plurality of the ceramics are fired, they are prevented from being fused and combined together. The production costs of the ceramic are low. The sintered piezoelectric ceramic comprises particulate or agglomerate zirconia grains dispersed in piezoelectric ceramic grains, in which the mean grain size of the piezoelectric ceramic grains is smaller than that of the zirconia grains.

Abstract: A process for producing powders of perovskite-type compounds which comprises mixing a metal alkoxide solution with a lead acetate solution to form a homogeneous, clear metal solution, adding an oxalic acid/n-propanol solution to this metal solution to form an easily filterable, free-flowing precursor powder and then calcining this powder. This process provides fine perovskite-phase powders with ferroelectric properties which are particularly useful in a variety of electronic applications.