Abstract: Provided are compositions and methods for selectively etching titanium nitride, generally leaving molybdenum present unaffected by the process, as well as any aluminum oxide, silicon dioxide, and polysilicon which may be present on the device. In general, the compositions of the invention were able to achieve titanium nitride etch rates exceeding 3.5 ?/minute, thereby providing uniform recess top and bottom layers in patterns.

Abstract: Provided are compositions and methods useful in etching, i.e., removing amorphous carbon hard masks which have been doped with elements such as boron, chlorine, or nitrogen. The compositions utilize concentrated sulfuric acid, water, and at least one oxidizing agent. In the operation of the method, the composition selectively removes the doped hard mask layer, even in the presence of layers such as silicon dioxide, silicon nitride, tantalum nitride, and polysilicon, with good selectivity.

Abstract: This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Abstract: A processing solution composition for reducing collapse of a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source and a method of forming a pattern using the same are proposed. The processing solution composition includes 0.0001 to 1 wt % of a nonionic surfactant having an HLB (Hydrophilic-Lipophilic Balance) value of 9 to 16, 0.0001 to 1 wt % of an alkaline material selected from the group consisting of tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, and mixtures thereof, and 98 to 99.9998 wt % of water, and is effective at reducing the collapse of a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source.

Abstract: Described are finishing solutions for removing support material and finishing 3D-printed objects. The finishing solution may contain a base (e.g., an aqueous base), an optional first caustic agent, an optional second caustic agent, an optional third caustic agent, an optional emulsifier, a polyol, a first antifoaming agent, an optional second antifoaming agent, and water. Also described are methods of using the finishing solution described herein.

Abstract: This invention relates to a photoresist stripper composition. The photoresist stripper composition according to the present invention comprises at least one choline compound; at least one polar aprotic solvent; and water; the weight percentage of the choline compound is from 2.5 to 50%, preferably from 5 to 50%, more preferably from 7 to 30%, and most preferably from 9 to 18% by weight based on the total weight of the composition. The photoresist stripper composition according to the present invention exhibits excellent photoresist cleaning performance and low etching to the substrate.

Abstract: Provided therefore herein is a novel acidic fluoride activated cleaning chemistry. The present invention includes novel acidic fluoride activated, unique organic-solvent based microelectronic selective etchant/cleaner compositions with high metal nitride etch and broad excellent compatibility, including tungsten (W) and low-k. It does not use W-incompatible oxidizers, such as hydrogen peroxide or particle-generating corrosion inhibitors.

Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one alkylsulfonic acid or a salt thereof, the alkylsulfonic acid containing an alkyl group substituted by OH or NH2; and 3) at least one aminoalcohol.

Abstract: A solution including at least one mixed acetal compound is used to remove hydrogen sulfide and/or mercaptans from a fluid stream, preferably a fluid gas stream. A mixed acetal compound, as provided in the general structure below, includes an N-glycosidic type bond. The mixed acetal includes nitrogen and oxygen as provided below.

Abstract: A method includes contacting an organic cured film with an acidic cleaning liquid including sulfuric acid and a water-soluble organic solvent and does not include a compound capable of generating nitronium ions. An amount of the sulfuric acid in the acidic cleaning liquid is 40% by mass or more, and an amount of water in the acidic cleaning liquid is 5% by mass or less.

Abstract: This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one carboxylic acid; 4) at least one Group II metal cation; 5) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 6) water, in which the composition is free of a compound comprising at least three hydroxyl groups. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.

Abstract: The present invention relates to a new lithography composition, the forming of resist patterns using the lithography composition, and a semiconductor device manufacturing method using the lithography composition in a photolithography method.

Abstract: The present invention relates to a peeling solution composition for dry film resist, which is usable for manufacturing a PCB for forming a microcircuit, and particularly is applicable for a process of manufacturing a flexible multi-layer PCB.

Abstract: A microelectronic device (semiconductor substrate) cleaning composition is provided that comprises water; oxalic acid, and two or more corrosion inhibitors and methods of using the same.

Abstract: A silicon etchant with high Si/SiO2 etching selectivity and its application are disclosed. The silicon etchant comprises at least one ketal and at least one quaternary ammonium hydroxide compound. The weight percentage of the ketal is 20˜99 wt. % based on the total weight of the etchant and the weight percentage of the quaternary ammonium hydroxide compound is 0.1˜10 wt. % based on the total weight of the etchant.

Abstract: Improved stripper solutions for removing photoresists from substrates are provided that typically have flash points above about 95° C. and high loading capacities. The stripper solutions comprise diethylene glycol butyl ether, quaternary ammonium hydroxide, and an alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent, the amino and hydroxyl substituents attached to two different carbon atoms. Some formulations can additionally contain a secondary solvent. The formulations do not contain DMSO. Methods for use of the stripping solutions are additionally provided.

Abstract: An object of the present invention is to provide a treatment liquid for a semiconductor device, which has excellent temporal stability of residue removing performance, and excellent anticorrosion performance for a treatment target. In addition, another object of the present invention is to provide a method for washing a substrate and a method for manufacturing a semiconductor device, each using the treatment liquid. The treatment liquid of an embodiment of the present invention is a treatment liquid for a semiconductor device, including at least one hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, at least one basic compound selected from the group consisting of an amine compound other than the hydroxylamine compound and a quaternary ammonium hydroxide salt, and at least one selected from the group consisting of a reducing agent other than the hydroxylamine compound and a chelating agent, and having a pH of 10 or more.

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.

Abstract: A method of manufacturing a semiconductor device includes exposing a material to a semi-aqueous etching solution. The semi-aqueous etching solution comprises a solvent which chelates with the material and acts as a catalyst between the etching driving force and the material. As such, the etching driving force may be used to remove the material.

Abstract: The present disclosure relates to a photoresist stripper composition for manufacturing an LCD, and relates to an integrated photoresist stripper composition capable of being used in all processes for manufacturing a TFT-LCD. More specifically, the present disclosure relates to an aqueous photoresist stripper composition capable of being used in all of transition metal, potential metal and oxide semiconductor wires.

Abstract: The composition for surface treatment according to the present invention includes a carboxylic acid compound having two or more nitrogen atoms, an ionic dispersing agent, and water, has a pH of less than 6, and is used for treating a surface of a polished object having a tungsten-containing layer.

Abstract: An aqueous hydrogen peroxide solution comprises a stabilizer chosen from the family of substituted or unsubstituted aminopolycarboxylic acids (APCA) or salts thereof. The solution may be used for disinfecting a packaging.

Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one water soluble organic solvent; 3) at least one metal-containing additive; 4) at least one cyclic amine, and 5) water.

Abstract: A cleaning liquid and an anticorrosion agent having an excellent corrosion inhibition function, and a method for manufacturing the same. The cleaning liquid contains alkanol hydroxyamine represented by general formula (1), alkanolamine represented by general formula (2), a solvent, and a basic compound other than the alkanol hydroxyamine and the alkanolamine or an acidic compound. In the general formula (1), Ra1 and Ra2 each independently represents a C1-C10 alkyl group having one to three hydroxy groups, or a hydrogen atom, Ra1 and Ra2 are not simultaneously a hydrogen atom, and Rb1 and Rb2 are not simultaneously a hydrogen atom.

Abstract: A cleaning liquid having an excellent corrosion inhibition function, and a method for manufacturing the same. The cleaning liquid contains alkanol hydroxyamine represented by general formula (1), and a basic compound other than the alkanol hydroxyamine. In the formula, Ra1 and Ra2 each independently represents a C1-C10 alkyl group having one to three hydroxy groups, or a hydrogen atom, and Ra1 and Ra2 are not simultaneously a hydrogen atom.

Abstract: A liquid removal composition and process for removing anti-reflective coating (ARC) material and/or post-etch residue from a substrate having same thereon. The composition achieves at least partial removal of ARC material and/or post-etch residue in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric and nitride-containing materials employed in the semiconductor architecture.

Abstract: A method of manufacturing a semiconductor device includes exposing a material to a semi-aqueous etching solution. The semi-aqueous etching solution comprises a solvent which chelates with the material and acts as a catalyst between the etching driving force and the material. As such, the etching driving force may be used to remove the material.

Abstract: This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one compound comprising at least three hydroxyl groups; 4) at least one carboxylic acid; 5) at least one Group II metal cation; 6) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 7) water. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.

Abstract: The present invention relates to a novel composition that may be used to control the etching rate of TIN with respect to W, and remove any residues from the surface, e.g. organic or inorganic residues that could contain fluorine (F), which composition comprises a) an aliphatic or aromatic sulfonic acid; b) one or more inhibitor(s); c) an aprotic solvent; d) a glycol ether; and e) water. The present invention also relates to a kit comprising said composition in combination with an oxidant and optionally a stabilizer of the oxidant, and the use thereof.

Abstract: A method for cleaning etch residues that may include treating an etched surface with an aqueous lanthanoid solution, wherein the aqueous lanthanoid solution removes an etch residue that includes a majority of hydrocarbons and at least one element selected from the group consisting of carbon, oxygen, fluorine, nitrogen and silicon. In one example, the aqueous solution may be cerium ammonium nitrate (Ce(NH4)(NO3)),(CAN).

Abstract: The present invention relates to a novel composition that may be used to control the etching rate of TIN with respect to W, and remove any residues from the surface, e.g. organic or inorganic residues that could contain fluorine (F), which composition comprises a) an aliphatic or aromatic sulfonic acid; b) one or more inhibitor(s); c) an aprotic solvent; d) a glycol ether; and e) water. The present invention also relates to a kit comprising said composition in combination with an oxidant and optionally a stabilizer of the oxidant, and the use thereof.

Abstract: Semi-aqueous, alkaline microelectronic cleaning composition of pH ?8 containing: (A) at least one secondary alkanolamine that generates hydroxides when in contact with water; (B) at least one organic alcohol ether solvent having an evaporation rate of 0.3 or less when n-butyl acetate's evaporation rate is taken as the baseline rate of 1.0; (C) at least one corrosion inhibiting cyclic amide compound; (D) at least one pH balancing azole metal corrosion inhibitor in an amount of 0.08% or less by weight of the composition; and (E) water; and optionally (F) at least one polyhydroxylated phenol compound corrosion inhibitor; and (G) at least one polyalcohol or polythiol surface modification agent containing vicinal hydroxyl or vicinal sulfhydryl groups to pair with the polyhydroxylated phenol compound corrosion inhibitor.

Abstract: A method of removing a halogen includes performing a heating treatment on a halogen-containing film at a pressure higher than 1 atm and a temperature higher than 100 degrees C. in order to suppress a deterioration of the halogen-containing film while keeping an organic solvent, which is in a liquid phase and exhibits a polarity, in contact with a surface of the halogen-containing film.

Abstract: A method for manufacturing a liquid ejection head including a substrate having a terminal for electrical connection to an external device, an inorganic material layer on the substrate, and a flow path member disposed on the inorganic material layer and containing an organic material, and the manufacturing method includes a cleaning step of removing a silane coupling agent attached to the terminal by using a solution containing hydrogen fluoride, ammonium fluoride, and a water-soluble organic solvent.

Abstract: Provided are a cleaning composition for removing an organic material remaining on an organic layer and a method of forming a semiconductor device using the composition. The cleaning composition includes 0.01-5 wt %. hydroxide based on a total weight of the cleaning composition and deionized water.

Abstract: The disclosure is directed solutions and processes to remove substances from substrates. Optionally, the substances can include photoresist on semiconductor wafers. The solution may include a quaternary ammonium hydroxide, a first amine, a second amine, and a third amine with the total amount of amine being no greater than about 95% by weight of a total weight of the solution. Additionally, a solution may include at least one amine, a quaternary ammonium hydroxide, and water and be free of a polar solvent other than water with the solution having a dynamic viscosity that is no greater than about 60 centipoise.

Abstract: The object is to provide a cleaning liquid composition, which suppresses damage to a low-dielectric constant interlayer dielectric film, a wiring material, such as copper or a copper alloy, a barrier metal, and a barrier dielectric film and removes an organosiloxane thin film, a dry etching residue and a photoresist on a treatment target surface in a process for producing a semiconductor device, as well as a cleaning method for a semiconductor device using the same, and a production process for a semiconductor device using the same. A cleaning liquid composition for producing a semiconductor device according to the invention contains 0.05 to 25% by weight of a quaternary ammonium hydroxide, 0.001 to 1.0% by weight of potassium hydroxide, 5 to 85% by weight of a water-soluble organic solvent, and 0.0005 to 10% by weight of pyrazoles.

Abstract: Anionic surfactants have a formula: RfSO2N(H)—CH2CH(CH3)OH; or RfSO2N(H)—(CH2CH2O)xH, where x is an integer from 2-6. Rf is a fluoroalkyl group having 3 to 8 carbon atoms. Neutral surfactants having a formula: (a) RfSO2N[CH2CH(CH3)OH]2; (b) RfSO2N[CH2CH(CH3)OH][(CH2CH2O)nH], where n is an integer from 1-6; (c) RfSO2N(R)[(CH2CH2O)pH], where p is an integer from 2-6, and R is an alkyl group having 1 to 4 carbon atoms; or (d) RfSO2N[(CH2CH2O)qH][(CH2CH2O)mH], where q is an integer from 1-6 and m is an integer from 3-6. Rf is a fluoroalkyl group having 3 to 8 carbon atoms.

Abstract: The present invention relates to a substantially water-free photoresist stripping composition. Particularly, the present invention relates to a substantially water-free photoresist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (<3 wt % H2O). The present invention also provides a process for post-ion implantation stripping by using the composition of the present invention.

Abstract: The present invention proposes a method for removing an oxide formed on the surface of a copper film used in the process of manufacturing a circuit for a semiconductor, an organic light-emitting diode, an LED, or a liquid crystal display without causing corrosion on a lower metal film. The composition including corrosive amine may remove a metal oxide depending on the content of additive ranging from 0.01 to 10% regardless of the content of ultrapure water. A polar solvent other than the corrosive amine may efficiently remove an oxide from the surface of the metal when the same contains water and 0.01 to 20% of the additive.

Abstract: A cleaning composition includes about 0.01 to about 5 wt % of a chelating agent; about 0.01 to about 0.5 wt % of an organic acid; about 0.01 to about 1.0 wt % of an inorganic acid; about 0.01 to about 5 wt % of an alkali compound; and deionized water.

Abstract: The disclosure is directed solutions and processes to remove substances from substrates. The substances can include photoresist. The solutions can include dimethylsulfoxide, a quaternary ammonium hydroxide, an alkanolamine, and less than 3% by weight water of a total weight of the solution. The quaternary ammonium hydroxide can include tetramethylammonium hydroxide, dimethyldipropylammonium hydroxide, or methyltriethylammonium hydroxide. Additionally, the solutions can include a secondary solvent. For example, the secondary solvent can include an alcohol. In another example, the secondary solvent can include ethylene glycol. Methods for the preparation and use of the solution to remove substances from substrates are also described.

Abstract: Compositions containing certain organic solvents comprising at least 50% by weight of a glycol ether and a quaternary ammonium compound are capable of removing residues such as photoresist and/or etching residue from an article.

Abstract: A chemical solution including an aqueous solution, an oxidizing agent, and a pH stabilizer selected from quaternary ammonium salts and quaternary ammonium alkali can be employed to remove metallic materials in cavities for forming a semiconductor device. For example, metallic materials in gate cavities for forming a replacement gate structure can be removed by the chemical solution of the present disclosure with, or without, selectivity among multiple metallic materials such as work function materials. The chemical solution of the present disclosure provides different selectivity among metallic materials than known etchants in the art.

Abstract: Methods for an oxide layer over an epitaxial layer. In an embodiment, a method includes forming an epitaxial layer of semiconductor material over a semiconductor substrate; forming an oxide layer over the epitaxial layer; applying a solution including an oxidizer to the oxide layer; and cleaning the oxide layer with a cleaning solution. In another embodiment, a densification process is applied to an oxide layer including treating with thermal energy, UV energy, or both. In an embodiment for a gate-all-around device, the cleaning process is applied to an oxide layer over an epitaxial portion of a fin. Additional methods are disclosed.

Abstract: The present invention is directed to provide a semiconductor surface treating agent; composition which is capable of stripping an anti-reflection coating layer, a resist layer, and a cured resist layer in the production process of a semiconductor device and the like easily and in a short time, as well as a method for treating a semiconductor surface, comprising that the composition is used.

Abstract: Resist stripping agents useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits and/or liquid crystals with reduced metal and metal alloy etch rates (particularly copper etch rates and TiW etch rates), are provided with methods for their use. The preferred stripping agents contain low concentrations of resorcinol or a resorcinol derivative, with or without an added copper salt, and with or without an added amine to improve solubility of the copper salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

Abstract: An aqueous removal composition having a pH in the range of from 2 to 14 and method for selectively removing an etching mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, or alloy of Ti or W relative to low-k materials from a semiconductor substrate comprising said low-k materials having a TiN, TaN, TiNxOy, TiW, W, or alloy of Ti or W etching mask thereon wherein the removal composition comprises at least one oxidizing agent and a carboxylate compound.

Abstract: A liquid composition comprising (A) at least one polar organic solvent, selected from the group consisting of solvents exhibiting in the presence of from 0.06 to 4% by weight of dissolved tetramethylammonium hydroxide (B), the weight percentage being based on the complete weight of the respective test solution (AB), a constant removal rate at 50° C. for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) at least one quaternary ammonium hydroxide, and (C) at least one aromatic amine containing at least one primary amino group, a method for its preparation and a method for manufacturing electrical devices, employing the liquid composition as a resist stripping composition and its use for removing negative-tone and positive-tone photoresists and post etch residues in the manufacture of 3D Stacked Integrated Circuits and 3D Wafer Level Packagings by way of patterning Through Silicon Vias and/or by plating and bumping.

Abstract: The present invention is directed to provide a resist remover composition for semiconductor substrate which enables to remove a resist simply and easily in the photolithography process in the semiconductor field, and a method for removing a resist comprising that the composition is used. The present invention relates to a resist remover composition for semiconductor substrate, comprising [I] a carbon radical generating agent, [II] an acid, [III] a reducing agent, and [IV] an organic solvent, and having pH of lower than 7, and a method for removing a resist, comprising that the composition is used.