Abstract: A composition for removing a photoresist, the composition including about 1% by weight to about 10% by weight of tetramethyl ammonium hydroxide (“TMAH”), about 1% by weight to about 10% by weight of an alkanol amine, about 50% by weight to about 70% by weight of a glycol ether compound, about 0.01% by weight to about 1% by weight of a triazole compound, about 20% by weight to about 40% by weight of a polar solvent, and water, each based on a total weight of the composition.

Abstract: Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to ILD materials, and excellent removal performance in relation to a resist film and a bottom antireflective coating film, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water soluble organic solvent, water, and an inorganic base. The water soluble organic solvent contains a highly polar solvent having a dipole moment of no less than 3.0 D, a glycol ether solvent and a polyhydric alcohol, and the total content of the highly polar solvent and the glycol ether solvent is no less than 30% by mass relative to the total mass of the liquid for lithography.

Abstract: A microelectronic photoresist cleaning composition suitable for cleaning multi-metal microelectronic devices and to do so without any substantial or significant galvanic corrosion occurring when there is a subsequent rinsing step employing water.

Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.

Abstract: Compositions containing certain organic solvents comprising at least 50% by weight of a glycol ether and a quaternary ammonium compound are capable of removing residues such as photoresist and/or etching residue from an article.

Abstract: The embodiments of the present invention provide improved materials, apparatus, and methods for cleaning wafer surfaces, especially surfaces of patterned wafers (or substrates). The cleaning materials, apparatus, and methods discussed have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning material includes polymers of one or more polymeric compounds. The cleaning materials can be used in a wide range of viscosity and pH to clean different types of surfaces. The cleaning materials are in liquid phase, and deform around device features to capture the contaminants on the substrate. The polymers entrap the contaminants preventing their return to the substrate surface. The cleaning apparatus is designed to dispense and rinse cleaning materials with a range of viscosities.

Abstract: Compositions and methods useful for the removal of organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. A method is presented which applies a minimum volume of the composition as a coating to the inorganic substrate whereby sufficient heat is added and immediately rinsed with water to achieve complete removal. These compositions and methods are particularly suitable for removing and completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices.

Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.

Abstract: A method of conditioning the surface of a work piece, in particular of a litho-strip or litho-sheet, consisting of an aluminum alloy enables an increase in manufacturing speed in surface roughening while maintaining a high quality of the electro-chemical grained surface of the work piece with relative low effort related to facility equipment. The method of conditioning comprises at least the step of degreasing the surface of the work piece with a degreasing medium, wherein the degreasing medium contains at least 1.5 to 3% by weight of a composite of 5-40% sodium tripolyphosphate, 3-10% sodium gluconate, 3-8% of a composite of non-ionic and anionic surfactants and optionally 0.5 to 70% soda, wherein sodium hydroxide is added to the degreasing medium such that the concentration of sodium hydroxide in the aqueous degreasing medium is 0.01 to 5% by weight.

Abstract: The present invention is a composition for removal of multi-layer photoresist layers on an electronic device substrate for rework of the photoresist on the substrate, comprising; (i) a solvent blend of at least three discrete solvents, (ii) at least one organic sulfonic acid, and (iii) at least one corrosion inhibitor. The present invention is also a method for using the composition. This composition and method succeed in removing such multi-layer photoresist at temperatures less than 65° C. and in contact times under three minutes, allowing high throughput on single wafer tools.

Abstract: According to certain embodiments, a resist is placed over the surface of a semiconductor structure, wherein the resist covers a portion of the semiconductor structure. Dopants are implanted into the semiconductor structure using an ion implantation beam in regions of the semiconductor structure not covered by the resist. Due to exposure to the ion implantation beam, at least a portion of the resist is converted by exposure to the ion beam to contain an inorganic carbonized material. The semiconductor structure with resist is contacted with a superacid composition containing a superacid species to remove the resist containing inorganic carbonized materials from the semiconductor structure.

Abstract: Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, an optional secondary solvent and less than about 3 wt. % water and/or a dryness coefficient of at least about 1. Methods for the preparation and use of the improved dry stripping solutions are additionally provided.

Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.

Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.

Abstract: Methods for removing a photoresist from a metal-comprising material are provided. In accordance with an exemplary embodiment of the present invention, the method comprises applying to the photoresist a substantially non-aqueous-based solvent having a pH no less than about 9 or no pH and subsequently applying to the metal-comprising material an aqueous-based fluid having a pH no less than about 9.

Abstract: Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.

Abstract: There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing at least one member selected from an imidazolium halide having an alkyl group containing 12, 14 or 16 carbon atoms, a pyridinium halide having an alkyl group containing 14 or 16 carbon atoms, an ammonium halide having an alkyl group containing 14, 16 or 18 carbon atoms, a betaine compound having an alkyl group containing 12, 14 or 16 carbon atoms, and an amine oxide compound having an alkyl group containing 14, 16 or 18 carbon atoms, and a method for producing a fine metal structure using the same.

Abstract: Disclosed is a resist stripping solution composition, which is highly capable of removing a resist pattern and an etching residue after dry etching or wet etching, manifests excellent anticorrosive effects on metal wiring including aluminum and/or copper because a predetermined polyol compound is used, and also can process a number of substrates because a predetermined amide compound is used, thus greatly contributing to reducing the cost. A method of stripping a resist using the resist stripping solution composition is also provided.

Abstract: The present invention is directed to provide a resist remover composition for semiconductor substrate which enables to remove a resist simply and easily in the photolithography process in the semiconductor field, and a method for removing a resist comprising that the composition is used. The present invention relates to a resist remover composition for semiconductor substrate, comprising [I] a carbon radical generating agent, [II] an acid, [III] a reducing agent, and [IV] an organic solvent, and having pH of lower than 7, and a method for removing a resist, comprising that the composition is used.

Abstract: The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network).

Abstract: Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to tungsten, and excellent removal performance in relation to a resist film or the like, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water-soluble organic solvent, water, an inorganic salt and an anti-corrosion agent represented by a general formula (1) below. In the general formula (1), R1 represents an alkyl group or an aryl group having 1-17 carbon atoms, and R2 represents an alkyl group having 1-13 carbon atoms.

Abstract: The present invention is directed to provide a semiconductor surface treating agent composition which is capable of stripping an anti-reflection coating layer, a resist layer, and a cured resist layer in the production process of a semiconductor device and the like easily and in a short time, as well as a method for treating a semiconductor surface, comprising that the composition is used.

Abstract: A composition for removing photoresist and bottom anti-reflective coating from a semiconductor substrate is disclosed. The composition may comprise a nontoxic solvent, the nontoxic solvent having a flash point above 80 degrees Celsius and being capable of dissolving acrylic polymer and phenolic polymer. The composition may further comprise Tetramethylammonium Hydroxide (TMAH) mixed with the nontoxic solvent.

Abstract: Disclosed is a stripping agent that can easily strip a photoresist residue and the like at a low temperature in a short time and, at the same time, does not corrode a wiring material at all and has no need to use an organic solvent such as alcohol as a rinsing liquid. The stripping agent disclosed herein comprises 5 to 50% by mass of a specific amine, 30 to 65% by mass of a specific acid amide, 0.1 to 15% by mass of a saccharide or a sugar alcohol, and 1 to 64.5% by mass of water.

Abstract: A resist removing device 1 functions to remove a resist from a substrate while preventing occurrence of popping phenomenon and at the same time attains reduction in cost of energy for the resist removing and has a simplified constitution. The resist removing device 1 is equipped with a chamber 2 for containing therein a substrate 16 (for example, a substrate having a high-doze ion implanted resist), and with a pressure below the atmospheric pressure, the chamber 2 is fed with ozone gas, unsaturated hydrocarbons and water vapor. The ozone gas may be an ultra-high concentrated ozone gas that is produced by subjecting an ozone containing gas to a liquefaction-separation with the aid of a vapor pressure difference and then vaporizing the liquefied ozone. For cleaning the substrate 16 thus treated, it is preferable to use ultra-pure water. The chamber 2 is equipped with a susceptor 15 for holding the substrate 16. The susceptor 15 is heated to a temperature of 100° C. or below.

Abstract: The present invention relates to a substantially water-free photoresist stripping composition. Particularly, the present invention relates to a substantially water-free photoresist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (<3 wt % H2O). The present invention also provides a process for post-ion implantation stripping by using the composition of the present invention.

Abstract: Highly alkaline, aqueous formulations including (a) water, (b) at least one metal ion-free base at sufficient amounts to produce a final formulation alkaline pH, (c) from about 0.01% to about 5% by weight (expressed as % SiO2) of at least one water-soluble metal ion-free silicate corrosion inhibitors; (d) from about 0.01% to about 10% by weight of at least one metal chelating agent, and (e) from more than 0 to about 2.0% by weight of at least one oxymetalate are provided in accordance with this invention. Such formulations are combined with a peroxide such that a peroxymetalate is formed to produce form a microelectronic cleaning composition. Used to remove contaminants and residue from microelectronic devices, such as microelectronic substrates.

Abstract: The present invention is directed to compositions and method of use for treating semiconductor substrate comprising a sulfonium compound and a nucleophilic amine in the fabrication of electronic devices. Optionally, the said composition further comprises a chelating agent, and solvent. The pH of the said solution can be adjusted with the addition of acid or base. The semiconductor manufacturing processes include steps for post etch residue, photoresist removal and steps during chemical mechanical planarization and post chemical mechanical planarization.

Abstract: A multi-agent type cleaning kit for applying to semiconductor substrates, which contains a foaming agent having an alkylene carbonate and a carbonic acid salt, a foaming aid having an acidic compound, and an oxidizing agent; at least the foaming agent is mixed with the foaming aid upon using for the cleaning of a semiconductor substrate, in combination with the oxidizing agent.

Abstract: Compositions and methods useful for the removal of organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. A method is presented which applies a minimum volume of the composition as a coating to the inorganic substrate whereby sufficient heat is added and immediately rinsed with water to achieve complete removal. These compositions and methods are particularly suitable for removing and completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices.

Abstract: The invention relates to an edge bead remover composition for an organic film disposed on a substrate surface, comprising an organic solvent and at least one polymer having a contact angle with water greater than 70°. The invention also relates to a process for using the composition as an edge bead remover for an organic film.

Abstract: A microelectronic cleaning compositions of: a) from about 80% to about 99% by weight of the composition of at least one organic sulfone; b) from about 0.5% to about 19% by weight of the composition of water; and c) from about 0.5% to about 10% by weight of the composition of at least one component providing tetrafluoroborate ion, and d) optionally at least one polyhydric alcohol is especially useful to clean etch/ash residues from microelectronic substrates or device having both Si-based anti-reflective coatings and low-k dielectrics.

Abstract: Disclosed are ester compositions, solvents, cleaning formulations, curing agents, reactive diluent solvents, controlled acid function release agents, polyol monomers, drilling mud, methods of making each of the above, methods of using each of the above. In one embodiment, the ester composition is obtained from a process applied to a starting material, wherein the starting material is a portion of products from a cyclohexane oxidation process, wherein the starting material includes products having free acid functional groups, wherein the starting material is selected from the group consisting of a water extract (Water Wash), a concentrated water extract (COP Acid), a non-volatile residue (NVR), and a combination thereof.

Abstract: The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.

Abstract: A photosensitive composition remover used for removal of an uncured photosensitive composition, which remover includes 1 to 80 percent by mass of at least one type of aromatic hydrocarbon having 9 carbon atoms or more within the molecule. The photosensitive composition remover further includes an aprotic polar solvent and/or another solvent other than aprotic polar solvents. The photosensitive composition remover is effective for removal of an uncured photosensitive composition film deposited at the periphery, edges, or back of a substrate or removal of an uncured photosensitive composition deposited at the surface of system members or equipment in a process for forming a photosensitive composition film on a glass substrate, a semiconductor wafer, or the like.

Abstract: It is disclosed a cleaning liquid used in a process for forming a dual damascene structure comprising steps of etching a low dielectric layer (low-k layer) accumulated on a substrate having thereon a metallic layer to form a first etched-space; charging a sacrifice layer in the first etched-space; partially etching the low dielectric layer and the sacrifice layer to form a second etched-space connected to the first etched-space; and removing the sacrifice layer remaining in the first etched-space with the cleaning liquid, wherein the cleaning liquid comprises (a) 1-25 mass % of a quaternary ammonium hydroxide, such as TMAH and choline (b) 30-70 mass % of a water soluble organic solvent, and (c) 20-60 mass % of water.

Abstract: Disclosed are cleaning solvents and cleaning methods for metallic compounds deposited on the equipment that supplies organometallic compounds to the manufacturing tool in the photovoltaic industry or the semiconductor industry. The cleaning solvents and the cleaning methods disclosed not only selectively remove the metallic compound without corroding the equipment, but also improve the ordinary cleaning process. Moreover, the cleaning solvents and the cleaning methods disclosed improve maintenance costs for the supply system because the equipment may be cleaned without being detached from the supply system.

Abstract: Compositions and methods useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. Methods are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and immediately rinsed with water to achieve complete removal. The compositions and methods may be suitable for removing and completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices.

Abstract: The present invention provides a washing method for a device substrate, capable of sufficiently removing a resist attached to a device substrate, particularly a resist attached to fine pore portions of a pattern having a large aspect ratio. A method for washing a device substrate, which comprises a washing step of removing a resist attached to a device substrate by means of a solvent, wherein the solvent is a composition comprising at least one fluorinated compound selected from the group consisting of a hydrofluoroether, a hydrofluorocarbon and a perfluorocarbon, and a fluorinated alcohol.

Abstract: A semiconductor process is provided. First, a metal layer, a dielectric layer and a patterned hard mask layer are sequentially formed on a substrate. Thereafter, a portion of the dielectric layer is removed to form an opening exposing the metal layer. Afterwards, a cleaning solution is used to clean the opening. The cleaning solution includes a triazole compound with a content of 0.00275 to 3 wt %, sulfuric acid with a content of 1 to 10 wt %, hydrofluoric acid with a content of 1 to 200 ppm and water. The semiconductor process can reduce the possibility of having an incomplete turning on, a leakage or a short, so that the yield of the product is increased.

Abstract: Disclosed are ester compositions, solvents, cleaning formulations, curing agents, reactive diluent solvents, controlled acid function release agents, polyol monomers, drilling mud and methods of making and using the same. Disclosed compositions include: a) about 10 to 60 weight percent methyl hydroxycaproate; b) about 20 to 80 weight percent dimethyl adipate; c) about 1 to 15 wt % of dimethyl glutarate; d) about 0.1 to 5 wt % of dimethyl succinate; e) about 0.1 to 7 wt % of at least one cyclohexanediol; and f) less than about 20 wt % oligomeric esters.

Abstract: A liquid composition free from N-alkylpyrrolidones and hydroxyl amine and its derivatives, having a dynamic shear viscosity at 50° C. of from 1 to 10 mPas as measured by rotational viscometry and comprising based on the complete weight of the composition, (A) of from 40 to 99.95% by weight of a polar organic solvent exhibiting in the presence of dissolved tetramethylammonium hydroxide (B) a constant removal rate at 50° C. for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) of from 0.05 to <0.5% of a quaternary ammonium hydroxide, and (C) <5% by weight of water; method for its preparation, a method for manufacturing electrical devices and its use for removing negative-tone and positive-tone photoresists and post etch residues in the manufacture of 3D Stacked Integrated Circuits and 3D Wafer Level Packagings by way of patterning Through Silicon Vias and/or by plating and bumping.

Abstract: A photosensitive-resin remover composition includes an amine compound and de-ionized water, an amount of the de-ionized water being about 45% to about 99% by weight based on a total weight of the composition.

Abstract: A removal composition is described, having a plurality of abrasive particles, an organic amine, antioxidant, biocide, colorant, corrosion inhibitor, cosolvent, defoamer, dye, enzyme, light stabilizer, odor masking agent, plasticizer, preservative, rust inhibitor, surfactant, thickener, or a combination comprising at least one of the foregoing; from 0 to 1% water, based on the total weight of the removal composition; and a ketal adduct of formula (1) wherein R1 is C1-6 alkyl, R2 is hydrogen or C1-3 alkyl, each R3, R4, and R5 is independently hydrogen or C1-6 alkyl, R6 and R7 are each independently hydrogen or C1-6 alkyl, a=0-3, and b=0-1.

Abstract: A liquid composition comprising (A) at least one polar organic solvent, selected from the group consisting of solvents exhibiting in the presence of from 0.06 to 4% by weight of dissolved tetramethylammonium hydroxide (B), the weight percentage being based on the complete weight of the respective test solution (AB), a constant removal rate at 50° C. for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) at least one quaternary ammonium hydroxide, and (C) at least one aromatic amine containing at least one primary amino group, a method for its preparation and a method for manufacturing electrical devices, employing the liquid composition as a resist stripping composition and its use for removing negative-tone and positive-tone photoresists and post etch residues in the manufacture of 3D Stacked Integrated Circuits and 3D Wafer Level Packagings by way of patterning Through Silicon Vias and/or by plating and bumping.

Abstract: A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and optionally a surfactant. The composition may further include dense fluid. The compositions effectively remove the photoresist and/or post-etch residue material from the microelectronic device without substantially over-etching the underlying silicon-containing layer(s) and metallic interconnect materials.

Abstract: Disclosed is a photoresist stripping solution consisting essentially of (a) a quaternary ammonium hydroxide (e.g., tetramethylammonium hydroxide), (b) at least one water-soluble organic solvent selected from glycols and glycol ethers (e.g., propylene glycol, ethylene glycol, diethylene glycol monobutyl ether), and (c) a non-amine water-soluble organic solvent (e.g., dimethyl sulfoxide, N-methyl-2-pyrrolidone). The photoresist stripping solution of the invention has an excellent photoresist strippability, not causing damage of swelling/coloration to acrylic transparent films used in production of liquid-crystal panels and not causing damage to electrode materials. In particular, it has an excellent photoresist strippability to remove even a thick-film negative photoresist (photosensitive dry film) used in production of semiconductor chip packages (especially, wafer-level chip size packages, W-CSP), not causing damage to copper.

Abstract: The present invention relates to semi-aqueous formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, as well as contaminations. The formulation comprises: an alkanolamine, a water miscible organic co-solvent, a quarternary ammonium compound, a non-free acid functionality corrosion inhibitor, and remainder water. The pH is greater than 9.

Abstract: To provide a cleaning solution for a substrate for a semiconductor device which is excellent in the ability to remove particles, organic contaminants, metal contaminants and composite contaminants of an organic matter and a metal attached on a substrate surface, whereby the substrate surface can be highly cleaned, without being corroded. Particularly, to provide a cleaning solution which is excellent in the ability to clean low dielectric constant (Low-k) materials on which liquid is easily repelled due to hydrophobic and of which the ability to remove particles is poor. A cleaning solution for a substrate for a semiconductor device, which comprises the following components (A) and (B): (A) an organic acid (B) a nonionic surfactant having an HLB value of from 5 to less than 13.

Abstract: A composition for removal of high dosage ion implanted photoresist from the surface of a semiconductor device, the composition having at least one solvent having a flash point >65° C., at least one component providing a nitronium ion, and at least one phosphonic acid corrosion inhibitor compound, and use of such a composition to remove high dosage ion implanted photoresist from the surface of a semiconductor device.