For Printed Or Integrated Electrical Circuit, Or Semiconductor Device Patents (Class 510/175)
  • Patent number: 10400167
    Abstract: A composition and method using same useful for etching a semiconductor substrate comprising: from about 25 to 86% by weight of water; from about 0 to about 60% by weight of a water-miscible organic solvent; from about 1 to about 30% by weight of a base comprising a quartenary ammonium compound; from about 1 to about 50% by weight of an amine compound wherein the amine compound is selected from the group consisting of a secondary amine, a tertiary amine, and mixtures thereof; from about 0 to about 5% by weight of a buffering agent; from about 0 to about 15% by weight of a corrosion inhibitor.
    Type: Grant
    Filed: November 21, 2016
    Date of Patent: September 3, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Wen Dar Liu, Yi-Chia Lee, Tianniu Chen, Thomas Mebrahtu, Aiping Wu, Edward Chia Kai Tseng, Gene Everad Parris
  • Patent number: 10332914
    Abstract: A method of manufacturing an electronic device and an electronic device are disclosed. The manufacturing method including: forming a carbon nanotube electrode pattern on a substrate; placing the substrate on which the electron pattern is formed in a first oxidizing solution, to first dope the carbon nanotubes forming the electrode pattern; and spraying the electrode using a second oxidizing solution to second dope the carbon nanotubes forming the electrode pattern.
    Type: Grant
    Filed: June 17, 2015
    Date of Patent: June 25, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Jiuxia Yang, Feng Bai, Jiantao Liu
  • Patent number: 10301581
    Abstract: Liquid cleaning compositions for removing a titanium nitride hard mask while suppressing damage to copper, a copper alloy, cobalt or a cobalt alloy upon fabricating a semiconductor device, a cleaning method using the same, and a method for fabricating a semiconductor device, which comprise hydrogen peroxide at 1-30% by mass, potassium hydroxide at 0.01-1% by mass, aminopolymethylene phosphonic acid at 0.0001-0.05% by mass, a compound having a group 13 element at 0.00005-0.5% by mass, and water.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: May 28, 2019
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Kimihiro Aoyama, Nobuo Tajima
  • Patent number: 10260027
    Abstract: The invention provides a substrate detergent composition used for cleaning a surface of a substrate, comprising: (A) A quaternary ammonium salt: 0.1 to 2.0% by mass; (B) Water: 0.1 to 4.0% by mass; and (C) An organic solvent: 94.0 to 99.8% by mass. There can be provided a substrate detergent composition used for cleaning a surface of a substrate contaminated with a silicone component whose water contact angle is 100° or more.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: April 16, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masaya Ueno, Hideyoshi Yanagisawa
  • Patent number: 10253282
    Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
    Type: Grant
    Filed: December 21, 2016
    Date of Patent: April 9, 2019
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer
  • Patent number: 10199210
    Abstract: Provided is a semiconductor substrate treatment liquid which removes an organic material on the top of a semiconductor substrate from the semiconductor substrate having a Ge-containing layer that includes germanium (Ge) or cleans the surface thereof, and the treatment liquid includes a liquid chemical component which adjusts the pH of the treatment liquid to be in a range of 5 to 16 and an anticorrosive component which is used to prevent the Ge-containing layer.
    Type: Grant
    Filed: May 12, 2016
    Date of Patent: February 5, 2019
    Assignee: FUJIFILM Corporation
    Inventors: Tetsuya Kamimura, Yasuo Sugishima, Atsushi Mizutani
  • Patent number: 10196588
    Abstract: The objective of the present invention is in the field of cleaning agent in particular detergents. In particular, it relates to a novel detergent formulation for an automatic dishwashing. The formulation provides excellent cleaning and finishing; it is environmentally friendlier than traditional compositions and allows for a more energy efficient automatic dishwashing process.
    Type: Grant
    Filed: May 2, 2013
    Date of Patent: February 5, 2019
    Assignee: UNIVERSITI PUTRA MALAYSIA
    Inventors: Raja Noor Zaliha Raja Abdul Rahman, Abu Bakar Salleh, Mahiran Basri, Izuddin Abdul Rahman
  • Patent number: 10155921
    Abstract: The present disclosure relates to a removal composition for selectively removing an hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W relative to low-k dielectric material from a semiconductor substrate. The semiconductor substrate comprises a low-k dielectric material having a TiN, TaN, TiNxOy, TiW, W, Ti or alloy of Ti or W hard mask thereon. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water.
    Type: Grant
    Filed: October 9, 2014
    Date of Patent: December 18, 2018
    Assignees: E I DUPONT NE NEMOURS AND COMPANY, EKC TECHNOLOGY INC.
    Inventor: Hua Cui
  • Patent number: 10138117
    Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions are low pH and contain at least one oxidizing agent and at least one etchant as well as corrosion inhibitors to minimize metal erosion and passivating agents to protect dielectric materials.
    Type: Grant
    Filed: July 31, 2014
    Date of Patent: November 27, 2018
    Assignee: Entegris, Inc.
    Inventors: Li-Min Chen, Steven Lippy, Daniela White, Emanuel I. Cooper
  • Patent number: 10113141
    Abstract: An object of the present invention is to provide a good cleaning liquid for semiconductor device which is used after a CMP step, and the present invention relates to a cleaning liquid for semiconductor device containing the following components (1) to (5) or (1)? to (4)?: (1) an inorganic alkali; (2) a chelating agent; (3) an anionic surfactant selected from sulfonic acid type and sulfuric acid type anionic surfactants; (4) an amine oxide type surfactant; and (5) water, or (1)? an inorganic alkali; (2)? a carboxyl group-containing chelating agent; (3)? an anionic surfactant selected from a benzenesulfonic acid substituted with an alkyl group having from 8 to 20 carbon atoms and a salt thereof; and (4)? water.
    Type: Grant
    Filed: August 18, 2014
    Date of Patent: October 30, 2018
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Ken Harada, Atsushi Ito, Toshiyuki Suzuki
  • Patent number: 10100272
    Abstract: The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains a bulky protecting ligand, an organic amine, an organic inhibitor, and water. The invention also provides methods for using the cleaning composition.
    Type: Grant
    Filed: July 17, 2015
    Date of Patent: October 16, 2018
    Assignee: Cabot Microelectronics Corporation
    Inventors: Roman Ivanov, Cheng-yuan Ko, Fred Sun
  • Patent number: 10073351
    Abstract: A photoresist or semiconductor manufacturing residue stripping and cleaning composition comprising water, one or more alkaline compounds, one or more corrosion inhibitors, and one or more oxidized products of one or more antioxidants, the method of making the composition and the method of using the composition.
    Type: Grant
    Filed: December 9, 2015
    Date of Patent: September 11, 2018
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Rajiv Krishan Agarwal, Mark Richard Brown, Aiping Wu, David Barry Rennie, Yi-Chia Lee, Gene Everad Parris
  • Patent number: 10032623
    Abstract: A cleaning method including a persulphuric acid producing step of causing a cleaning sulfuric acid solution to travel into an electrolyzing section and to circulate therethrough to produce persulphuric acid having a predetermined concentration by electrolysis in the electrolyzing section, a solution mixing step of mixing the sulfuric acid solution containing the persulphuric acid produced in the persulphuric acid producing step with a halide solution containing one or more types of halide ion without causing the solutions to travel into the electrolyzing section to produce a mixed solution having a post-mixture concentration of oxidant including the persulphuric acid that ranges from 0.001 to 2 mol/L, a heating step of heating the mixed solution, and a cleaning step of cleaning a semiconductor substrate by transporting the heated mixed solution to cause the heated mixed solution to come into contact with the semiconductor substrate.
    Type: Grant
    Filed: August 19, 2013
    Date of Patent: July 24, 2018
    Assignee: KURITA WATER INDUSTRIES LTD.
    Inventors: Yuichi Ogawa, Haruyoshi Yamakawa
  • Patent number: 9976111
    Abstract: Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.
    Type: Grant
    Filed: April 26, 2016
    Date of Patent: May 22, 2018
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Wen Dar Liu, Yi-Chia Lee, William Jack Casteel, Jr., Tianniu Chen, Rajiv Krishan Agarwal, Madhukar Bhaskara Rao
  • Patent number: 9972485
    Abstract: A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising copper, low-k dielectric material and TiN, TiNxOy or W wherein the composition includes water, at least one halide anion selected from Cl? or Br?, and, where the metal hard mask comprises only TiN or TiNxOy, optionally at least one hydroxide source.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: May 15, 2018
    Inventor: Hua Cui
  • Patent number: 9951302
    Abstract: According to the invention, the compositions and methods provide for the complete removal of synthetic glues or adhesives from a plurality of surfaces through the use of amide solvents in combination with surfactants, chelants, acidulants and/or additional bottle wash additives. Beneficially, the compositions and methods are suitable for use at lower temperatures, including below 35° C., and lower pH conditions, including from 5 to 10, from 6 to 9, and from 6 to 8, in comparison to conventional caustic-based adhesive removal compositions.
    Type: Grant
    Filed: October 12, 2016
    Date of Patent: April 24, 2018
    Assignee: ECOLAB USA INC.
    Inventors: Clinton Hunt, Jr., Kim R. Solomon, Ralf Krack
  • Patent number: 9921481
    Abstract: The present invention provides a composition enabling to form a fine negative photoresist pattern free from troubles such as surface roughness, bridge defects or unresolved defects, and the invention also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by applying to a negative resist pattern from a chemically amplified resist composition and fattening the resist pattern. This composition comprises a polymer comprising a repeating unit having an amino group or a polymer mixture, and a solvent, and further comprises a specific amount of an acid or indicates a specific pH value. The polymer mixture comprises polymers whose HSP distance, determined from Hansen solubility parameter, is 3 or more. In the pattern formation method, the composition is cast on a negative photoresist pattern beforehand obtained by development with an organic solvent developer and is then heated to form a fine pattern.
    Type: Grant
    Filed: February 26, 2014
    Date of Patent: March 20, 2018
    Assignee: AZ Electronic Materials (Luxembourg) S.à r.l.
    Inventors: Kazuma Yamamoto, Yoshihiro Miyamoto, Takashi Sekito, Tatsuro Nagahara
  • Patent number: 9914902
    Abstract: This disclosure relates to photoresist stripping compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one alcohol solvent; 3) at least one quaternary ammonium hydroxide; 4) water; 5) at least one copper corrosion inhibitor selected from 6-substituted-2,4-diamino-1,3,5-triazines; and 6) optionally, at least one defoaming surfactant.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: March 13, 2018
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Bing Du, Thomas Dory, William A. Wojtczak
  • Patent number: 9873857
    Abstract: Provided is a cleaning composition, including, from about 0.01 weight % to about 10.0 weight % of a chelating agent, from about 0.01 weight to about 3.0 weight % of an organic acid containing a carboxyl group, from about 0.01 weight % to about 2.0 weight % of an inorganic acid, from about 1.0 weight % to about 15.0 weight % of an amine and water in an amount sufficient to bring the total weight of the cleaning composition to 100 weight %.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: January 23, 2018
    Assignees: SAMSUNG DISPLAY CO., LTD., LTCAM CO., LTD.
    Inventors: Dongeon Lee, Jinho Ju, Junhyuk Woo, Seokho Lee
  • Patent number: 9873856
    Abstract: An aerosolized HVAC/R system solvent for decontaminating HVAC/R components and line sets The solvent contains 25-90 wt % propellant, and 10-75 wt % solvent mixture which is about 60-95 wt % trans-1,2, dichloroethylene, about 5-20 wt % n-propanol, and an inerting constituent providing a weight percent ratio of the inerting constituent to n-propanol of less than 1.5. The solvent is packaged in a container that is connected to the HVAC/R components or line sets to be decontaminated for supplying the solvent mixture under pressure to the HVAC/R components or line sets.
    Type: Grant
    Filed: May 20, 2016
    Date of Patent: January 23, 2018
    Assignee: MAINSTREAM ENGINEERING CORPORATION
    Inventor: Ted J. Amundsen
  • Patent number: 9687840
    Abstract: The invention includes compositions comprising curable imidazolium-functionalized poly(room-temperature ionic liquid) copolymers and homopolymers. The invention further includes methods of preparing and using the compositions of the invention. The invention further includes novel methods of preparing thin, supported, room-temperature ionic liquid-containing polymeric films on a porous support. In certain embodiments, the methods of the invention avoid the use of a gutter layer, which greatly reduces the overall gas permeance and selectivity of the composite membrane. In other embodiments, the films of the invention have increased gas selectivity and permeance over films prepared using methods described in the prior art.
    Type: Grant
    Filed: July 9, 2013
    Date of Patent: June 27, 2017
    Assignee: The Regents of the University of Colorado, a body corporate
    Inventors: Douglas Gin, Trevor Carlisle, Richard Noble, Garret Nicodemus, William McDanel, Matthew Cowan
  • Patent number: 9669354
    Abstract: A method for collecting carbon dioxide from flue gas of a power plant. The method includes: 1) mixing an organic amine, an ionic liquid, and water to obtain an aqueous solution of a composite absorbent; 2) spraying the aqueous solution of the composite absorbent into the flue gas to allow the flue gas flowing upwardly to fully contact with the downwardly sprayed aqueous solution of the composite absorbent and to allow CO2 in the flue gas to react with the composite absorbent to yield a solution rich in A.CO2 and B.CO2, where A represents the organic amine and B represents the ionic liquid; allowing the solution rich in A.CO2 and B.CO2 to stand and clarify to form different liquid layers; 3) thermally decomposing the mixed solution rich in A.CO2 and B.CO2 after heat exchange to release the chemically bound CO2.
    Type: Grant
    Filed: June 23, 2014
    Date of Patent: June 6, 2017
    Assignee: WUHAN KAIDI GENERAL RESEARCH INSTITUTE OF ENGINEERING & TECHNOLOGY CO., LTD.
    Inventors: Zhilong Wang, Yanfeng Zhang
  • Patent number: 9670137
    Abstract: New stabilizers for solutions of choline hydroxide and related quaternary trialkylalkanolamines are disclosed. The stabilizers are alkyl hydroxylamines, hydrazines, hydrazides, or derivates thereof, including compounds containing more than one such functionality. The new stabilizers are effective at concentrations less than about 1000 ppm, and choline hydroxide solutions stabilized with the compounds described herein typically have Gardner Color change less than about 2.0 after six months at reasonable temperatures.
    Type: Grant
    Filed: April 8, 2013
    Date of Patent: June 6, 2017
    Assignee: Huntsman Petrochemical LLC
    Inventor: Dave C Ferguson
  • Patent number: 9593297
    Abstract: Compositions for removing residues from a semiconductor structure. The compositions comprise water, a base, a polydentate chelator, a degasser, and a fluorine source. The compositions comprise greater than or equal to approximately 99 wt % of the water and are formulated to exhibit a pH of from approximately 10.0 to approximately 12.0. Methods of forming and using the compositions are also disclosed.
    Type: Grant
    Filed: October 15, 2014
    Date of Patent: March 14, 2017
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Cole S. Franklin, Jerome A. Imonigie
  • Patent number: 9562211
    Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
    Type: Grant
    Filed: December 3, 2014
    Date of Patent: February 7, 2017
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer
  • Patent number: 9535330
    Abstract: A stripping solution for photolithography including hydrofluoric acid, a basic compound represented by general formula (b-1), and water. In the formula, R1b to R5b represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms or the like, and at least one of R1b to R5b represents a hydrogen atom. One of R1b to R4b may bind with R5b to form a ring structure. Y1b and Y2b represent an alkylene group having 1 to 3 carbon atoms, and n is an integer of 0 to 5.
    Type: Grant
    Filed: October 30, 2012
    Date of Patent: January 3, 2017
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Yuriko Shirai, Naohisa Ueno, Takuya Ohhashi
  • Patent number: 9528030
    Abstract: The invention provides a chemical-mechanical polishing composition that contains (a) abrasive particles, (b) an azole compound having an octanol-water log P of about 1 to about 2, (c) a cobalt corrosion inhibitor, wherein the cobalt corrosion inhibitor comprises an anionic head group and a C8-C14 aliphatic tail group, (d) a cobalt accelerator, (e) an oxidizing agent that oxidizes cobalt, and (f) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.
    Type: Grant
    Filed: October 21, 2015
    Date of Patent: December 27, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Kraft, Phillip W. Carter, Jason Seabold
  • Patent number: 9494867
    Abstract: Disclosed are a rinse solution for lithography comprising water and a nonionic surfactant represented by the formula (I) (R1 and R2 may be the same as or different from each other and represent a hydrogen atom or a methyl group, R3 and R4 may be the same as or different from each other and represent a hydrogen atom, a methyl group or an ethyl group, R5 represents a hydrocarbon group having 2 to 5 carbon atoms, in which one or more of a double bond or triple bond are contained, or a phenylene group, and R6 and R7 may be the same as or different from each other and represent a hydrogen atom or a methyl group) and a method for forming a resist pattern by rinsing the resist pattern obtained by exposing and developing a photosensitive resist with the rinse solution for lithography described above.
    Type: Grant
    Filed: May 1, 2014
    Date of Patent: November 15, 2016
    Assignee: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.
    Inventors: Yuriko Matsuura, Sara Tsuyuki, Go Noya
  • Patent number: 9490142
    Abstract: This disclosure relates post chemical mechanical planarization cleaning composition of semiconductor substrate for advanced electronics fabrication and packaging. It provides novel corrosion inhibition and quality upmost Cu-low K surfaces to the demanding reliability of nano device and Cu interconnection. Its efficacious cleaning without changing of ultra-low K dielectric and interfering with ultimate electronics performance also offers a cleaning solution to the Cu-low K structure of post reactive ion etching as well as resist ashing in semiconductor fabrication process flow.
    Type: Grant
    Filed: April 9, 2015
    Date of Patent: November 8, 2016
    Assignee: Qualsig Inc.
    Inventors: Jiali Wu, Kellsie Shan
  • Patent number: 9476016
    Abstract: A method of cleaning a mount substrate comprising the step of: preparing a cleaning solution and cleaning the mount substrate by using the cleaning solution. The cleaning solution is a chemical solution produced by providing organic amine as a content in a hydrocarbon-based solvent containing a ketone or an aromatic and by adding unsaturated carboxylic acid anhydride or carboxylic anhydride to this solvent.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: October 25, 2016
    Assignee: Mitsubishi Electric Corporation
    Inventors: Yoshiyuki Kamo, Masaru Kinugawa
  • Patent number: 9472420
    Abstract: Aqueous compositions for stripping titanium nitride (TiN or TiNxOy) hard mask and removing etch residue are low pH aqueous composition comprising solvent, a weakly coordinating anion, amine, and at least two non-oxidizing trace metal ions. The aqueous compositions contain no non-ambient oxidizer, and are exposed to air. Bifluoride, or metal corrosion inhibitor may be added to the aqueous composition. Systems and processes use the aqueous compositions for stripping titanium nitride (TiN or TiNxOy) hard mask and removing titanium nitride (TiN or TiNxOy) etch residue.
    Type: Grant
    Filed: November 19, 2014
    Date of Patent: October 18, 2016
    Assignee: Air Products and Chemicals, Inc.
    Inventors: William Jack Casteel, Jr., Seiji Inaoka, Madhukar Bhaskara Rao, Brenda Faye Ross, Yi-Chia Lee, Wen Dar Liu, Tianniu Chen
  • Patent number: 9458415
    Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) at least one compound comprising at least one thiol (—SH), thioether (—SR1) or thiocarbonyl (>C?S) group, wherein R1 is alkyl, aryl, alkylaryl or arylalkyl, (B) at least one sugar alcohol which contains at least three hydroxyl (—OH) groups and does not comprise any carboxylic acid (—COOH) or carboxylate (—COO—) groups, and (C) an aqueous medium.
    Type: Grant
    Filed: January 24, 2013
    Date of Patent: October 4, 2016
    Assignee: BASF SE
    Inventors: Yuzhuo Li, Shyam Sundar Venkataraman, Mingjie Zhong
  • Patent number: 9422513
    Abstract: A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.
    Type: Grant
    Filed: December 2, 2014
    Date of Patent: August 23, 2016
    Assignee: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Melissa K. Rath, David D. Bernhard, Thomas H. Baum, David W. Minsek
  • Patent number: 9375883
    Abstract: In a method for reconditioning data carriers having a plastic part, a reconditioning fluid is applied in a liquid phase to the data carrier, wherein the reconditioning fluid includes at least one solvent and at least one plasticizer, wherein the solvent is selected in such a way that it is substantially inert compared to the data carrier, wherein a non-volatile plasticizer is selected and the concentration of the plasticizer in the reconditioning fluid is selected such that the gradient of the change in volume of the data carrier owing to the replacement of plasticizer with the reconditioning fluid is positive.
    Type: Grant
    Filed: December 23, 2011
    Date of Patent: June 28, 2016
    Assignee: ÖSTERREICHISCHE AKADEMIE DER WISSENSCHAFTEN
    Inventors: Nadja Wallaszkovits, Peter Liepert, Lidija Spoljaric-Lukacic
  • Patent number: 9360761
    Abstract: The present invention relates to a photoresist stripping composition for all process of manufacturing LCD, more specifically to a water-borne united photoresist stripping composition, as a weak basic composite comprising a tertiary alkanolamine, water, and an organic solvent. The composition according to the present invention prevents a corrosion of Al and Cu metal wiring in process of manufacturing LCD, has a good capability of removing photoresist, and is applied to all Al process, Cu process, an organic film process, and COA process.
    Type: Grant
    Filed: August 19, 2010
    Date of Patent: June 7, 2016
    Assignee: LTC Co., Ltd.
    Inventor: Ho Sung Choi
  • Patent number: 9328318
    Abstract: A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.
    Type: Grant
    Filed: March 3, 2014
    Date of Patent: May 3, 2016
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Dnyanesh Chandrakant Tamboli, Rajkumar Ramamurthi, David Barry Rennie, Madhukar Bhaskara Rao, Gautam Banerjee, Gene Everad Parris
  • Patent number: 9291910
    Abstract: The disclosure is directed solutions and processes to remove substances from substrates. In some cases, the substances can include photoresist on semiconductor wafers. The solution can include hydrogen peroxide in an amount that is no greater than 15% by weight of the total weight of the solution. The solution can also include a quaternary ammonium hydroxide and water. Further, the solution can include an amine, a co-solvent, or both. One or more sides of the substrate can be contacted with the solution to remove one or more substances from the solution.
    Type: Grant
    Filed: September 27, 2013
    Date of Patent: March 22, 2016
    Assignee: Dynaloy, LLC
    Inventors: Richard Dalton Peters, Travis W. Acra, Yuanmei Cao, Nichelle Maria Gilbert, Michael Tod Phenis, Kimberly Dona Pollard, Joshua Cummins, Meng Guo, Donald James Pfettscher
  • Patent number: 9275851
    Abstract: Aqueous, nitrogen-free cleaning composition, preparation and use thereof are provided. The composition having a pH of from 5 to 8 comprises (A) an amphiphilic nonionic, water-soluble or water-dispersible surfactant and (B) a metal chelating agent selected from polycarboxylic acids having at least 3 carboxylic acid groups. The composition is used for removing residues and contaminants from semiconductor substrates.
    Type: Grant
    Filed: February 28, 2012
    Date of Patent: March 1, 2016
    Assignee: BASF SE
    Inventors: Andreas Klipp, Vijay Immanuel Raman, Shyam Sundar Venkataraman, Raimund Mellies, Mingjie Zhong
  • Patent number: 9256128
    Abstract: A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating component in order to form a floating region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating component may be a floating cross-linking agent, a floating polymer resin, or a floating catalyst. The floating cross-linking agent, the floating polymer resin, or the floating catalyst may comprise a fluorine atom. The anti-reflective layers are removed using a fluid.
    Type: Grant
    Filed: September 18, 2014
    Date of Patent: February 9, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Yu Chang, Chen-Yu Liu
  • Patent number: 9257270
    Abstract: A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising copper, low-k dielectric material and TiN, TiNxOy or W wherein the composition includes water, at least one halide anion selected from Cl? or Br?, and, where the metal hard mask comprises only TiN or TiNxOy, optionally at least one hydroxide source.
    Type: Grant
    Filed: February 12, 2013
    Date of Patent: February 9, 2016
    Inventor: Hua Cui
  • Patent number: 9212340
    Abstract: The present disclosure relates to a dimethyl sulfoxide composition suitable for cleaning polymer residue found on the devices used for processing plastic materials, in particular polyurethane.
    Type: Grant
    Filed: October 4, 2011
    Date of Patent: December 15, 2015
    Assignee: ARKEMA FRANCE
    Inventors: Mélanie Vauthrin, Bernard Monguillon, Paul Guillaume Schmitt
  • Patent number: 9190376
    Abstract: The present invention relates generally to and more particularly, to a method of fabricating a pillar interconnect structure with non-wettable sidewalls and the resulting structure. More specifically, the present invention may include exposing only the sidewalls of a pillar to an organic material that reacts with metal of the pillar to form an organo-metallic layer on sidewalls of the pillar. The organo-metallic layer may prevent solder from wetting on the sidewalls of the pillar during subsequent bonding/reflow processes.
    Type: Grant
    Filed: May 15, 2014
    Date of Patent: November 17, 2015
    Assignee: International Business Machines Corporation
    Inventors: Charles L. Arvin, Brian M. Erwin, Eric D. Perfecto, Wolfgang Sauter, Thomas A. Wassick
  • Patent number: 9179551
    Abstract: The present invention provides a method for producing a printed-wiring board in a semi-additive process, comprising the steps of: providing a chemical copper plating 4 on an insulation layer 3 or forming a copper thin film on the insulation layer 3 using a sputtering method; subjecting the obtained copper surface 4 to a roughening treatment using an etching solution containing 0.1 to 3% by mass of hydrogen peroxide, 0.3 to 5% by mass of sulfuric acid, 0.1 to 3 ppm of halogen ion and 0.003 to 0.3% by mass of tetrazoles; attaching a dry film resist 5 to the copper surface 4 after the roughening treatment to perform exposure and development and providing an electrolytic copper plating 7 to an opening 6 after the exposure; and subjecting the remaining dry film resist to a stripping treatment using a resist stripping liquid containing 0.5 to 20% by mass of monoethanolamine, 0.2 to 10% by mass of quaternary ammonium hydroxide, 0.01 to 10% by mass of ethylene glycols and 0.01 to 0.5% by mass of azoles.
    Type: Grant
    Filed: July 16, 2014
    Date of Patent: November 3, 2015
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Kenichi Takahashi, Kazuhiko Ikeda
  • Patent number: 9176388
    Abstract: Systems and methods are provided for forming features through photolithography. A polymer layer is formed over a substrate. The polymer layer is patterned to form a first feature and a second feature, the first feature and the second feature being separated at a first distance. A rinse material is applied to the polymer layer including the first feature and the second feature. The rinse material is removed from the polymer layer including the first feature and the second feature to cause the first feature and the second feature to come into contact with each other. A third feature is formed based on the first feature and the second feature being in contact with each other.
    Type: Grant
    Filed: November 5, 2013
    Date of Patent: November 3, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chun-Liang Tai, Bi-Ming Yen, Chun-Hung Lee, De-Fang Chen
  • Patent number: 9171715
    Abstract: Atomic layer deposition processes for forming germanium oxide thin films are provided. In some embodiments the ALD processes can include the following: contacting the substrate with a vapor phase tetravalent Ge precursor such that at most a molecular monolayer of the Ge precursor is formed on the substrate surface; removing excess Ge precursor and reaction by products, if any; contacting the substrate with a vapor phase oxygen precursor that reacts with the Ge precursor on the substrate surface; removing excess oxygen precursor and any gaseous by-products, and repeating the contacting and removing steps until a germanium oxide thin film of the desired thickness has been formed.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: October 27, 2015
    Assignee: ASM IP HOLDING B.V.
    Inventor: Raija H. Matero
  • Patent number: 9165760
    Abstract: A cleaning composition is provided. The cleaning composition includes at least one polyamino-polycarboxylic acid or at least one salt thereof, at least one solvent, at least one substituted or non-substituted phenethylamine and water. The solvent is selected from a group consisting of glycols.
    Type: Grant
    Filed: October 16, 2013
    Date of Patent: October 20, 2015
    Assignee: UWIZ Technology Co., Ltd.
    Inventors: Yu-Chi Fu, Wen-Tsai Tsai, Ming-Hui Lu, Song-Yuan Chang
  • Patent number: 9159558
    Abstract: Methods are disclosed for reducing the number of defects in a directed self-assembled structure formed on a guiding pre-pattern (e.g., a chemical pre-pattern) on a substrate. A first layer comprising a first self-assembly material is applied onto the guiding pre-pattern, with the first self-assembly material forming domains whose alignment and orientation are directed by the guiding pre-pattern; as a result, a first self-assembled structure is formed. The first self-assembled structure is washed away, and a second layer comprising a second self-assembly material is then applied. The second self-assembly material forms a second self-assembled structure having fewer defects than the first self-assembled structure.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: October 13, 2015
    Assignee: International Business Machines Corporation
    Inventors: Joy Cheng, Daniel P. Sanders, Melia Tjio
  • Patent number: 9146471
    Abstract: A liquid composition free from N-alkylpyrrolidones and hydroxyl amine and its derivatives, having a dynamic shear viscosity at 50° C. of from 1 to 10 mPas as measured by rotational viscometry and comprising based on the complete weight of the composition, (A) of from 40 to 99.95% by weight of a polar organic solvent exhibiting in the presence of dissolved tetramethylammonium hydroxide (B) a constant removal rate at 50° C. for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) of from 0.05 to <0.5% of a quaternary ammonium hydroxide, and (C) <5% by weight of water; method for its preparation, a method for manufacturing electrical devices and its use for removing negative-tone and positive-tone photoresists and post etch residues in the manufacture of 3D Stacked Integrated Circuits and 3D Wafer Level Packagings by way of patterning Through Silicon Vias and/or by plating and bumping.
    Type: Grant
    Filed: April 20, 2010
    Date of Patent: September 29, 2015
    Assignee: BASF SE
    Inventor: Andreas Klipp
  • Patent number: 9074170
    Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
    Type: Grant
    Filed: October 20, 2009
    Date of Patent: July 7, 2015
    Assignee: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Jeffrey A. Barnes, Brian Benac, Karl E. Boggs, Lin Feng, Jun Liu, Melissa A. Petruska, Xiaodong Yan, Peng Zhang
  • Patent number: 9069259
    Abstract: Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, a secondary solvent, and less than about 3 wt. % water. Methods for the preparation and use of the improved dry stripping solutions are additionally provided.
    Type: Grant
    Filed: February 5, 2013
    Date of Patent: June 30, 2015
    Assignee: Dynaloy, LLC
    Inventors: Michael Phenis, Laurl Johnson, Raymond Chan, Diane Scheele, Kimberly Pollard