For Printed Or Integrated Electrical Circuit, Or Semiconductor Device Patents (Class 510/175)
  • Patent number: 10844335
    Abstract: Disclosed is a post-chemical-mechanical-polishing cleaning composition, which is capable of effectively removing impurities from the surface of a wafer substrate after chemical mechanical polishing and also of preventing the corrosion of metal line materials, and which includes choline hydroxide, tetrabutylammonium hydroxide, 1,2,4-triazole, 2-hydroxypyridine, and the remainder of ultrapure water.
    Type: Grant
    Filed: March 6, 2018
    Date of Patent: November 24, 2020
    Assignee: YOUNG CHANG CHEMICAL CO., LTD
    Inventors: Seung Hun Lee, Seung Hyun Lee, Seong Hwan Kim
  • Patent number: 10844333
    Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more nonionic polymers selected from the group consisting of poly-acrylamides, polyhydroxyethyl(meth)acrylates (PHE(M)A), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polymers of formula (I), and mixtures thereof, wherein R1 is hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, or sec-butyl, R2 is hydrogen or methyl, and n is an integer, (B) poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: November 24, 2020
    Assignee: BASF SE
    Inventors: Christian Daeschlein, Max Siebert, Michael Lauter, Piotr Przybylski, Julian Proelss, Andreas Klipp, Haci Osman Guevenc, Leonardos Leunissen, Roelf-Peter Baumann, Te Yu Wei
  • Patent number: 10829722
    Abstract: Disclosed herein are multi-component, azeotrope-like compositions containing trans-dichloroethylene, 1,1,1,3,3-pentafluorobutane, and 1,1,2,2-tetrafluoroethyl-2,2,2-trifluoroethyl ether. These compositions also form an azeotrope-like mixture with methanol. These compositions are useful as solvents in refrigeration flushing, oxygen system cleaning, foam blowing, and cleaning operations such as cold cleaning, vapor degreasing, and aerosol cleaners.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: November 10, 2020
    Assignee: ENVIRO TECH INTERNATIONAL, INC.
    Inventors: Richard J. DeGroot, Karl Loepke, Andrew Mavec
  • Patent number: 10804111
    Abstract: A method for roughening a surface of a substrate, including: applying a composition containing inorganic particles and organic resin to the surface of the substrate and drying and curing the composition to form an organic resin layer; and etching the substrate by a solution containing hydrogen fluoride, hydrogen peroxide, or an acid, to roughen the surface. Preferably, the solution contains hydrogen fluoride and ammonium fluoride or hydrogen peroxide and ammonia, the resin layer contains a ratio of the particles to the resin of 5 to 50 parts by mass to 100 parts by mass, and the composition is a mixture of silica sol wherein silica is dispersed as the inorganic particles in organic solvent or titanium oxide sol wherein titanium oxide is dispersed, with a solution of the organic resin.
    Type: Grant
    Filed: September 15, 2016
    Date of Patent: October 13, 2020
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Keisuke Hashimoto, Yasunobu Someya, Takahiro Kishioka, Rikimaru Sakamoto
  • Patent number: 10787628
    Abstract: The present disclosure is directed to non-corrosive cleaning compositions that are useful, e.g., for removing residues (e.g., plasma etch and/or plasma ashing residues) and/or metal oxides from a semiconductor substrate as an intermediate step in a multistep manufacturing process.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: September 29, 2020
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Thomas Dory, Emil A. Kneer, Tetsuya Kamimura
  • Patent number: 10790187
    Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.
    Type: Grant
    Filed: January 17, 2018
    Date of Patent: September 29, 2020
    Assignee: ENTEGRIS, INC.
    Inventors: Emanuel I. Cooper, Makonnen Payne, WonLae Kim, Eric Hong, Sheng-Hung Tu, Chieh Ju Wang, Chia-Jung Hsu
  • Patent number: 10741409
    Abstract: A method of manufacturing a semiconductor device includes preparing an object layer on a substrate; polishing the object layer with a first slurry including a first abrasive having a zeta potential of a first polarity; rinsing a surface of the object layer, using a rinsing solution including a chemical of a second polarity, opposite to the first polarity; and polishing the object layer with a second slurry including a second abrasive having a zeta potential of a second polarity, opposite to the first polarity.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: August 11, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyo Jung Kim, Ye Hwan Kim, Ki Hoon Jang, Byoung Ho Kwon, Bo Un Yoon
  • Patent number: 10731109
    Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. In addition, the cleaning compositions are compatible with ruthenium-containing materials.
    Type: Grant
    Filed: April 11, 2018
    Date of Patent: August 4, 2020
    Assignee: ENTEGRIS, INC.
    Inventors: Donald Frye, Jun Liu, Daniela White, Michael White
  • Patent number: 10711227
    Abstract: Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: July 14, 2020
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Wen Dar Liu, Yi-Chia Lee, William Jack Casteel, Jr., Tianniu Chen, Rajiv Krishan Agarwal, Madhukar Bhaskara Rao
  • Patent number: 10696933
    Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 5) at least one quaternary ammonium hydroxide; and 6) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: June 30, 2020
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer
  • Patent number: 10676668
    Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: June 9, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Neng-Jye Yang, Kuo Bin Huang, Ming-Hsi Yeh, Shun Wu Lin, Yu-Wen Wang, Jian-Jou Lian, Shih Min Chang
  • Patent number: 10651028
    Abstract: According to the present invention, it is possible to provide a cleaning solution which removes a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains 0.001-5 mass % of an alkaline earth metal compound, 0.1-30 mass % of an inorganic alkali and/or an organic alkali, and water.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: May 12, 2020
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Toshiyuki Oie, Kenji Shimada
  • Patent number: 10626353
    Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, water soluble sulfones, and water soluble ethers; 3) at least one boron-containing compound selected from the group consisting of boric acid, boronic acids, and salts thereof; and 4) water.
    Type: Grant
    Filed: February 7, 2018
    Date of Patent: April 21, 2020
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Emil A. Kneer, Yasuo Sugishima
  • Patent number: 10619126
    Abstract: The present disclosure is directed to non-corrosive cleaning compositions that are useful primarily for removing residues (e.g., plasma etch and/or plasma ashing residues) and/or metal oxides from a semiconductor substrate as an intermediate step in a multistep manufacturing process.
    Type: Grant
    Filed: July 14, 2016
    Date of Patent: April 14, 2020
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Yasuo Sugishima, Keeyoung Park, Thomas Dory
  • Patent number: 10590262
    Abstract: The present invention relates to novel surfactant mixtures comprising at least one compound A whose dynamic surface tension ?dyn. at a use concentration of 0.1% by weight and a bubble lifetime of 100 ms is <45 mN/m, and at least one compound B whose static surface tension ystat measured at a use concentration of 0.1% by weight is less than or equal to the static surface tension Ystat of compound A, to the use thereof as additives, for example in preparations for surface coating, such as paints, lacquers, protective coatings and special coatings in electronic or in optical applications. At least one compound in the novel surfactant mixture is a fluorosurfactant.
    Type: Grant
    Filed: July 26, 2013
    Date of Patent: March 17, 2020
    Assignee: Merck Patent GmbH
    Inventors: Joerg Pahnke, Gerhard Jonschker, Steffen Schellenberger, Mathias Kaiser
  • Patent number: 10577567
    Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues in the production of semiconductors. There is provided a stock composition comprising: a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; a corrosion inhibitor; and a combination of at least two or more polyprotic acids or salts thereof, wherein at least one said polyprotic acid or salt thereof contains phosphorous.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: March 3, 2020
    Assignee: Entegris, Inc.
    Inventors: Makonnen Payne, Emanuel I. Cooper, WonLae Kim, Eric Hong, Sean Kim
  • Patent number: 10533146
    Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one metal-containing additive; and 4) water.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: January 14, 2020
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Keeyoung Park, Emil A. Kneer, Thomas Dory, Tomonori Takahashi
  • Patent number: 10501710
    Abstract: A cleaner composition consisting essentially of (A) 90.0-99.9 wt % of an organic solvent and (B) 0.1-10.0 wt % of a C3-C6 alcohol, and containing (C) 20-300 ppm of sodium and/or potassium is effective for cleaning a surface of a silicon semiconductor substrate. A satisfactory degree of cleanness is achieved within a short time and at a high efficiency without causing corrosion to the substrate.
    Type: Grant
    Filed: April 18, 2017
    Date of Patent: December 10, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masaya Ueno, Hideyoshi Yanagisawa
  • Patent number: 10468243
    Abstract: In a method of cleaning a substrate, a solution including a size-modification material is applied on a substrate, on which particles to be removed are disposed. Size-modified particles having larger size than the particles are generated, from the particles and the size-modification material. The size-modified particles are removed from the substrate.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: November 5, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventor: Chung-Chieh Lee
  • Patent number: 10468250
    Abstract: A rinse solution includes a surfactant and deionized water. The surfactant includes a compound having a branched structure, the compound having a branched structure including a hydrophobic group-containing main chain and a plurality of side chains that are branched from the main chain and have at least one hydrophilic functional group. A method of fabricating an integrated circuit device includes forming a photoresist pattern, followed by applying the rinse solution onto the photoresist pattern.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: November 5, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ju-young Kim, Jeong-ju Park, Jin Park, Hai-sub Na
  • Patent number: 10428271
    Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant, one etchant, and one activator to enhance the etch rate of titanium nitride.
    Type: Grant
    Filed: August 28, 2014
    Date of Patent: October 1, 2019
    Assignee: Entegris, Inc.
    Inventors: Emanuel I. Cooper, Li-Min Chen, Steven Lippy, Chia-Jung Hsu, Sheng-hung Tu, Chieh Ju Wang
  • Patent number: 10400167
    Abstract: A composition and method using same useful for etching a semiconductor substrate comprising: from about 25 to 86% by weight of water; from about 0 to about 60% by weight of a water-miscible organic solvent; from about 1 to about 30% by weight of a base comprising a quartenary ammonium compound; from about 1 to about 50% by weight of an amine compound wherein the amine compound is selected from the group consisting of a secondary amine, a tertiary amine, and mixtures thereof; from about 0 to about 5% by weight of a buffering agent; from about 0 to about 15% by weight of a corrosion inhibitor.
    Type: Grant
    Filed: November 21, 2016
    Date of Patent: September 3, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Wen Dar Liu, Yi-Chia Lee, Tianniu Chen, Thomas Mebrahtu, Aiping Wu, Edward Chia Kai Tseng, Gene Everad Parris
  • Patent number: 10332914
    Abstract: A method of manufacturing an electronic device and an electronic device are disclosed. The manufacturing method including: forming a carbon nanotube electrode pattern on a substrate; placing the substrate on which the electron pattern is formed in a first oxidizing solution, to first dope the carbon nanotubes forming the electrode pattern; and spraying the electrode using a second oxidizing solution to second dope the carbon nanotubes forming the electrode pattern.
    Type: Grant
    Filed: June 17, 2015
    Date of Patent: June 25, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Jiuxia Yang, Feng Bai, Jiantao Liu
  • Patent number: 10301581
    Abstract: Liquid cleaning compositions for removing a titanium nitride hard mask while suppressing damage to copper, a copper alloy, cobalt or a cobalt alloy upon fabricating a semiconductor device, a cleaning method using the same, and a method for fabricating a semiconductor device, which comprise hydrogen peroxide at 1-30% by mass, potassium hydroxide at 0.01-1% by mass, aminopolymethylene phosphonic acid at 0.0001-0.05% by mass, a compound having a group 13 element at 0.00005-0.5% by mass, and water.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: May 28, 2019
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Kimihiro Aoyama, Nobuo Tajima
  • Patent number: 10260027
    Abstract: The invention provides a substrate detergent composition used for cleaning a surface of a substrate, comprising: (A) A quaternary ammonium salt: 0.1 to 2.0% by mass; (B) Water: 0.1 to 4.0% by mass; and (C) An organic solvent: 94.0 to 99.8% by mass. There can be provided a substrate detergent composition used for cleaning a surface of a substrate contaminated with a silicone component whose water contact angle is 100° or more.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: April 16, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masaya Ueno, Hideyoshi Yanagisawa
  • Patent number: 10253282
    Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
    Type: Grant
    Filed: December 21, 2016
    Date of Patent: April 9, 2019
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer
  • Patent number: 10199210
    Abstract: Provided is a semiconductor substrate treatment liquid which removes an organic material on the top of a semiconductor substrate from the semiconductor substrate having a Ge-containing layer that includes germanium (Ge) or cleans the surface thereof, and the treatment liquid includes a liquid chemical component which adjusts the pH of the treatment liquid to be in a range of 5 to 16 and an anticorrosive component which is used to prevent the Ge-containing layer.
    Type: Grant
    Filed: May 12, 2016
    Date of Patent: February 5, 2019
    Assignee: FUJIFILM Corporation
    Inventors: Tetsuya Kamimura, Yasuo Sugishima, Atsushi Mizutani
  • Patent number: 10196588
    Abstract: The objective of the present invention is in the field of cleaning agent in particular detergents. In particular, it relates to a novel detergent formulation for an automatic dishwashing. The formulation provides excellent cleaning and finishing; it is environmentally friendlier than traditional compositions and allows for a more energy efficient automatic dishwashing process.
    Type: Grant
    Filed: May 2, 2013
    Date of Patent: February 5, 2019
    Assignee: UNIVERSITI PUTRA MALAYSIA
    Inventors: Raja Noor Zaliha Raja Abdul Rahman, Abu Bakar Salleh, Mahiran Basri, Izuddin Abdul Rahman
  • Patent number: 10155921
    Abstract: The present disclosure relates to a removal composition for selectively removing an hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W relative to low-k dielectric material from a semiconductor substrate. The semiconductor substrate comprises a low-k dielectric material having a TiN, TaN, TiNxOy, TiW, W, Ti or alloy of Ti or W hard mask thereon. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water.
    Type: Grant
    Filed: October 9, 2014
    Date of Patent: December 18, 2018
    Assignees: E I DUPONT NE NEMOURS AND COMPANY, EKC TECHNOLOGY INC.
    Inventor: Hua Cui
  • Patent number: 10138117
    Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions are low pH and contain at least one oxidizing agent and at least one etchant as well as corrosion inhibitors to minimize metal erosion and passivating agents to protect dielectric materials.
    Type: Grant
    Filed: July 31, 2014
    Date of Patent: November 27, 2018
    Assignee: Entegris, Inc.
    Inventors: Li-Min Chen, Steven Lippy, Daniela White, Emanuel I. Cooper
  • Patent number: 10113141
    Abstract: An object of the present invention is to provide a good cleaning liquid for semiconductor device which is used after a CMP step, and the present invention relates to a cleaning liquid for semiconductor device containing the following components (1) to (5) or (1)? to (4)?: (1) an inorganic alkali; (2) a chelating agent; (3) an anionic surfactant selected from sulfonic acid type and sulfuric acid type anionic surfactants; (4) an amine oxide type surfactant; and (5) water, or (1)? an inorganic alkali; (2)? a carboxyl group-containing chelating agent; (3)? an anionic surfactant selected from a benzenesulfonic acid substituted with an alkyl group having from 8 to 20 carbon atoms and a salt thereof; and (4)? water.
    Type: Grant
    Filed: August 18, 2014
    Date of Patent: October 30, 2018
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Ken Harada, Atsushi Ito, Toshiyuki Suzuki
  • Patent number: 10100272
    Abstract: The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains a bulky protecting ligand, an organic amine, an organic inhibitor, and water. The invention also provides methods for using the cleaning composition.
    Type: Grant
    Filed: July 17, 2015
    Date of Patent: October 16, 2018
    Assignee: Cabot Microelectronics Corporation
    Inventors: Roman Ivanov, Cheng-yuan Ko, Fred Sun
  • Patent number: 10073351
    Abstract: A photoresist or semiconductor manufacturing residue stripping and cleaning composition comprising water, one or more alkaline compounds, one or more corrosion inhibitors, and one or more oxidized products of one or more antioxidants, the method of making the composition and the method of using the composition.
    Type: Grant
    Filed: December 9, 2015
    Date of Patent: September 11, 2018
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Rajiv Krishan Agarwal, Mark Richard Brown, Aiping Wu, David Barry Rennie, Yi-Chia Lee, Gene Everad Parris
  • Patent number: 10032623
    Abstract: A cleaning method including a persulphuric acid producing step of causing a cleaning sulfuric acid solution to travel into an electrolyzing section and to circulate therethrough to produce persulphuric acid having a predetermined concentration by electrolysis in the electrolyzing section, a solution mixing step of mixing the sulfuric acid solution containing the persulphuric acid produced in the persulphuric acid producing step with a halide solution containing one or more types of halide ion without causing the solutions to travel into the electrolyzing section to produce a mixed solution having a post-mixture concentration of oxidant including the persulphuric acid that ranges from 0.001 to 2 mol/L, a heating step of heating the mixed solution, and a cleaning step of cleaning a semiconductor substrate by transporting the heated mixed solution to cause the heated mixed solution to come into contact with the semiconductor substrate.
    Type: Grant
    Filed: August 19, 2013
    Date of Patent: July 24, 2018
    Assignee: KURITA WATER INDUSTRIES LTD.
    Inventors: Yuichi Ogawa, Haruyoshi Yamakawa
  • Patent number: 9976111
    Abstract: Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.
    Type: Grant
    Filed: April 26, 2016
    Date of Patent: May 22, 2018
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Wen Dar Liu, Yi-Chia Lee, William Jack Casteel, Jr., Tianniu Chen, Rajiv Krishan Agarwal, Madhukar Bhaskara Rao
  • Patent number: 9972485
    Abstract: A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising copper, low-k dielectric material and TiN, TiNxOy or W wherein the composition includes water, at least one halide anion selected from Cl? or Br?, and, where the metal hard mask comprises only TiN or TiNxOy, optionally at least one hydroxide source.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: May 15, 2018
    Inventor: Hua Cui
  • Patent number: 9951302
    Abstract: According to the invention, the compositions and methods provide for the complete removal of synthetic glues or adhesives from a plurality of surfaces through the use of amide solvents in combination with surfactants, chelants, acidulants and/or additional bottle wash additives. Beneficially, the compositions and methods are suitable for use at lower temperatures, including below 35° C., and lower pH conditions, including from 5 to 10, from 6 to 9, and from 6 to 8, in comparison to conventional caustic-based adhesive removal compositions.
    Type: Grant
    Filed: October 12, 2016
    Date of Patent: April 24, 2018
    Assignee: ECOLAB USA INC.
    Inventors: Clinton Hunt, Jr., Kim R. Solomon, Ralf Krack
  • Patent number: 9921481
    Abstract: The present invention provides a composition enabling to form a fine negative photoresist pattern free from troubles such as surface roughness, bridge defects or unresolved defects, and the invention also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by applying to a negative resist pattern from a chemically amplified resist composition and fattening the resist pattern. This composition comprises a polymer comprising a repeating unit having an amino group or a polymer mixture, and a solvent, and further comprises a specific amount of an acid or indicates a specific pH value. The polymer mixture comprises polymers whose HSP distance, determined from Hansen solubility parameter, is 3 or more. In the pattern formation method, the composition is cast on a negative photoresist pattern beforehand obtained by development with an organic solvent developer and is then heated to form a fine pattern.
    Type: Grant
    Filed: February 26, 2014
    Date of Patent: March 20, 2018
    Assignee: AZ Electronic Materials (Luxembourg) S.à r.l.
    Inventors: Kazuma Yamamoto, Yoshihiro Miyamoto, Takashi Sekito, Tatsuro Nagahara
  • Patent number: 9914902
    Abstract: This disclosure relates to photoresist stripping compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one alcohol solvent; 3) at least one quaternary ammonium hydroxide; 4) water; 5) at least one copper corrosion inhibitor selected from 6-substituted-2,4-diamino-1,3,5-triazines; and 6) optionally, at least one defoaming surfactant.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: March 13, 2018
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Bing Du, Thomas Dory, William A. Wojtczak
  • Patent number: 9873857
    Abstract: Provided is a cleaning composition, including, from about 0.01 weight % to about 10.0 weight % of a chelating agent, from about 0.01 weight to about 3.0 weight % of an organic acid containing a carboxyl group, from about 0.01 weight % to about 2.0 weight % of an inorganic acid, from about 1.0 weight % to about 15.0 weight % of an amine and water in an amount sufficient to bring the total weight of the cleaning composition to 100 weight %.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: January 23, 2018
    Assignees: SAMSUNG DISPLAY CO., LTD., LTCAM CO., LTD.
    Inventors: Dongeon Lee, Jinho Ju, Junhyuk Woo, Seokho Lee
  • Patent number: 9873856
    Abstract: An aerosolized HVAC/R system solvent for decontaminating HVAC/R components and line sets The solvent contains 25-90 wt % propellant, and 10-75 wt % solvent mixture which is about 60-95 wt % trans-1,2, dichloroethylene, about 5-20 wt % n-propanol, and an inerting constituent providing a weight percent ratio of the inerting constituent to n-propanol of less than 1.5. The solvent is packaged in a container that is connected to the HVAC/R components or line sets to be decontaminated for supplying the solvent mixture under pressure to the HVAC/R components or line sets.
    Type: Grant
    Filed: May 20, 2016
    Date of Patent: January 23, 2018
    Assignee: MAINSTREAM ENGINEERING CORPORATION
    Inventor: Ted J. Amundsen
  • Patent number: 9687840
    Abstract: The invention includes compositions comprising curable imidazolium-functionalized poly(room-temperature ionic liquid) copolymers and homopolymers. The invention further includes methods of preparing and using the compositions of the invention. The invention further includes novel methods of preparing thin, supported, room-temperature ionic liquid-containing polymeric films on a porous support. In certain embodiments, the methods of the invention avoid the use of a gutter layer, which greatly reduces the overall gas permeance and selectivity of the composite membrane. In other embodiments, the films of the invention have increased gas selectivity and permeance over films prepared using methods described in the prior art.
    Type: Grant
    Filed: July 9, 2013
    Date of Patent: June 27, 2017
    Assignee: The Regents of the University of Colorado, a body corporate
    Inventors: Douglas Gin, Trevor Carlisle, Richard Noble, Garret Nicodemus, William McDanel, Matthew Cowan
  • Patent number: 9669354
    Abstract: A method for collecting carbon dioxide from flue gas of a power plant. The method includes: 1) mixing an organic amine, an ionic liquid, and water to obtain an aqueous solution of a composite absorbent; 2) spraying the aqueous solution of the composite absorbent into the flue gas to allow the flue gas flowing upwardly to fully contact with the downwardly sprayed aqueous solution of the composite absorbent and to allow CO2 in the flue gas to react with the composite absorbent to yield a solution rich in A.CO2 and B.CO2, where A represents the organic amine and B represents the ionic liquid; allowing the solution rich in A.CO2 and B.CO2 to stand and clarify to form different liquid layers; 3) thermally decomposing the mixed solution rich in A.CO2 and B.CO2 after heat exchange to release the chemically bound CO2.
    Type: Grant
    Filed: June 23, 2014
    Date of Patent: June 6, 2017
    Assignee: WUHAN KAIDI GENERAL RESEARCH INSTITUTE OF ENGINEERING & TECHNOLOGY CO., LTD.
    Inventors: Zhilong Wang, Yanfeng Zhang
  • Patent number: 9670137
    Abstract: New stabilizers for solutions of choline hydroxide and related quaternary trialkylalkanolamines are disclosed. The stabilizers are alkyl hydroxylamines, hydrazines, hydrazides, or derivates thereof, including compounds containing more than one such functionality. The new stabilizers are effective at concentrations less than about 1000 ppm, and choline hydroxide solutions stabilized with the compounds described herein typically have Gardner Color change less than about 2.0 after six months at reasonable temperatures.
    Type: Grant
    Filed: April 8, 2013
    Date of Patent: June 6, 2017
    Assignee: Huntsman Petrochemical LLC
    Inventor: Dave C Ferguson
  • Patent number: 9593297
    Abstract: Compositions for removing residues from a semiconductor structure. The compositions comprise water, a base, a polydentate chelator, a degasser, and a fluorine source. The compositions comprise greater than or equal to approximately 99 wt % of the water and are formulated to exhibit a pH of from approximately 10.0 to approximately 12.0. Methods of forming and using the compositions are also disclosed.
    Type: Grant
    Filed: October 15, 2014
    Date of Patent: March 14, 2017
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Cole S. Franklin, Jerome A. Imonigie
  • Patent number: 9562211
    Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
    Type: Grant
    Filed: December 3, 2014
    Date of Patent: February 7, 2017
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer
  • Patent number: 9535330
    Abstract: A stripping solution for photolithography including hydrofluoric acid, a basic compound represented by general formula (b-1), and water. In the formula, R1b to R5b represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms or the like, and at least one of R1b to R5b represents a hydrogen atom. One of R1b to R4b may bind with R5b to form a ring structure. Y1b and Y2b represent an alkylene group having 1 to 3 carbon atoms, and n is an integer of 0 to 5.
    Type: Grant
    Filed: October 30, 2012
    Date of Patent: January 3, 2017
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Yuriko Shirai, Naohisa Ueno, Takuya Ohhashi
  • Patent number: 9528030
    Abstract: The invention provides a chemical-mechanical polishing composition that contains (a) abrasive particles, (b) an azole compound having an octanol-water log P of about 1 to about 2, (c) a cobalt corrosion inhibitor, wherein the cobalt corrosion inhibitor comprises an anionic head group and a C8-C14 aliphatic tail group, (d) a cobalt accelerator, (e) an oxidizing agent that oxidizes cobalt, and (f) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.
    Type: Grant
    Filed: October 21, 2015
    Date of Patent: December 27, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Kraft, Phillip W. Carter, Jason Seabold
  • Patent number: 9494867
    Abstract: Disclosed are a rinse solution for lithography comprising water and a nonionic surfactant represented by the formula (I) (R1 and R2 may be the same as or different from each other and represent a hydrogen atom or a methyl group, R3 and R4 may be the same as or different from each other and represent a hydrogen atom, a methyl group or an ethyl group, R5 represents a hydrocarbon group having 2 to 5 carbon atoms, in which one or more of a double bond or triple bond are contained, or a phenylene group, and R6 and R7 may be the same as or different from each other and represent a hydrogen atom or a methyl group) and a method for forming a resist pattern by rinsing the resist pattern obtained by exposing and developing a photosensitive resist with the rinse solution for lithography described above.
    Type: Grant
    Filed: May 1, 2014
    Date of Patent: November 15, 2016
    Assignee: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.
    Inventors: Yuriko Matsuura, Sara Tsuyuki, Go Noya
  • Patent number: 9490142
    Abstract: This disclosure relates post chemical mechanical planarization cleaning composition of semiconductor substrate for advanced electronics fabrication and packaging. It provides novel corrosion inhibition and quality upmost Cu-low K surfaces to the demanding reliability of nano device and Cu interconnection. Its efficacious cleaning without changing of ultra-low K dielectric and interfering with ultimate electronics performance also offers a cleaning solution to the Cu-low K structure of post reactive ion etching as well as resist ashing in semiconductor fabrication process flow.
    Type: Grant
    Filed: April 9, 2015
    Date of Patent: November 8, 2016
    Assignee: Qualsig Inc.
    Inventors: Jiali Wu, Kellsie Shan