For Printed Or Integrated Electrical Circuit, Or Semiconductor Device Patents (Class 510/175)
  • Patent number: 11410859
    Abstract: The present invention provides a treatment liquid for a semiconductor device, which has excellent temporal stability of residue removal performance as well as excellent anticorrosion performance for an object to be treated. The treatment liquid of an aspect of the present invention is a treatment liquid for a semiconductor device contains one or more hydroxylamine compounds selected from the group consisting of hydroxylamine and a hydroxylamine salt, an organic basic compound, an alcohol-based solvent, and a surfactant, in which a content of the alcohol-based solvent with respect to a total mass of the treatment liquid is 40% to 85% by mass, and a pH is 8 or higher.
    Type: Grant
    Filed: September 22, 2020
    Date of Patent: August 9, 2022
    Assignee: FUJIFILM Corporation
    Inventors: Tetsuya Kamimura, Tomonori Takahashi
  • Patent number: 11407966
    Abstract: This disclosure relates to a cleaning composition that contains 1) hydroxylamine, 2) an amino alcohol, 3) hexylene glycol, and 4) water.
    Type: Grant
    Filed: January 26, 2022
    Date of Patent: August 9, 2022
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Thomas Dory, Mick Bjelopavlic, Joshua Guske, Kazutaka Takahashi
  • Patent number: 11397383
    Abstract: A treatment liquid for a semiconductor device contains an organic alkali compound, a corrosion inhibitor, an organic solvent, Ca, Fe, and Na, in which each of the mass ratio of the Ca, the mass ratio of the Fe, and the mass ratio of the Na to the organic alkali compound in the treatment liquid is 10—12 to 10?4. A method for washing a substrate and a method for removing a resist use the treatment liquid.
    Type: Grant
    Filed: November 14, 2018
    Date of Patent: July 26, 2022
    Assignee: FUJIFILM Corporation
    Inventors: Tomonori Takahashi, Tetsuya Kamimura
  • Patent number: 11390829
    Abstract: A treatment liquid for cleaning a semiconductor wafer is a treatment liquid contains (A) a hypochlorite ion and (C) a solvent, in which pH at 25° C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.
    Type: Grant
    Filed: January 15, 2019
    Date of Patent: July 19, 2022
    Assignee: TOKUYAMA CORPORATION
    Inventors: Takafumi Shimoda, Takayuki Negishi, Yuki Kikkawa, Seiji Tono
  • Patent number: 11390577
    Abstract: Provided is a method of producing a quaternary alkyl ammonium hypochlorite solution with an excellent storage stability. Specifically, provided is a method of producing a quaternary alkyl ammonium hypochlorite solution, the method including: a preparation step in which a quaternary alkyl ammonium hydroxide solution is prepared and the concentration of amines in the quaternary alkyl ammonium hydroxide solution is set to 20 ppm by mass or less; and a reaction step in which the quaternary alkyl ammonium hydroxide solution is brought into contact with chlorine gas, wherein the concentration of carbon dioxide of a gas phase in the reaction step is 100 ppm by volume or less and the pH of a liquid phase in the reaction step is 10.5 or more.
    Type: Grant
    Filed: November 20, 2020
    Date of Patent: July 19, 2022
    Assignee: TOKUYAMA CORPORATION
    Inventors: Takafumi Shimoda, Yuki Kikkawa, Tomoaki Sato, Takayuki Negishi
  • Patent number: 11380543
    Abstract: A substrate is provided with a monocrystalline silicon-germanium layer with a first surface covered by a protective oxide obtained by wet process and having a degradation temperature. The protective oxide is transformed into fluorinated salt which is then eliminated. The substrate is placed in a processing chamber at a lower temperature than the degradation temperature and is subjected to a temperature ramp up to a higher temperature than the degradation temperature. The first surface is annealed in a hydrogen atmosphere devoid of silicon, germanium and precursors of the materials forming the target layer. When the temperature ramp is applied, a silicon precursor is inserted in the processing chamber between a loading temperature and the degradation temperature to deposit a monocrystalline buffer layer. A mono-crystalline target layer is deposited by chemical vapour deposition.
    Type: Grant
    Filed: December 17, 2019
    Date of Patent: July 5, 2022
    Assignees: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, UNIVERSITÉ GRENOBLE ALPES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Pierre-Edouard Raynal, Pascal Besson, Jean-Michel Hartmann, Virginie Loup, Laurent Vallier
  • Patent number: 11377624
    Abstract: A cleaning composition for post-etch or post ash residue removal from a substrate used in semiconductor industry and a corresponding use of said cleaning composition is described. Further described is a process for the manufacture of a semiconductor device from a semiconductor substrate, comprising the step of post-etch or post ash residue removal from a substrate by contacting the substrate with a cleaning composition according to the invention.
    Type: Grant
    Filed: December 5, 2018
    Date of Patent: July 5, 2022
    Assignee: BASF SE
    Inventors: Jhih Jheng Ke, Andreas Klipp, Yi Ping Cheng, Joannes Theodorus Valentinus Hoogboom
  • Patent number: 11377627
    Abstract: The present invention provides a means by which it is possible to sufficiently suppress an organic residue while favorably decreasing a ceria residue on a polished object to be polished obtained after being polished using a polishing composition containing ceria. The present invention relates to a composition for surface treatment, which is for a surface treatment of a polished object to be polished obtained after being polished using a polishing composition containing ceria, contains a carboxy group-containing (co)polymer having a structural unit derived from a monomer having a carboxy group or a salt group of the carboxy group, a SOx or NOy partial structure-containing compound having a partial structure represented by SOx or NOy (where x and y each independently denote a real number 1 to 5), and a dispersing medium, and has a pH of 1 or more and 8 or less.
    Type: Grant
    Filed: January 23, 2018
    Date of Patent: July 5, 2022
    Assignee: FUJIMI INCORPORATED
    Inventors: Yukinobu Yoshizaki, Koichi Sakabe, Satoru Yarita, Kenichi Komoto
  • Patent number: 11306248
    Abstract: A silicon etching solution including a component which is a quaternary ammonium hydroxide represented by Formula (A-1), and a component which is a nonionic surfactant, in which an HLB value of the quaternary ammonium hydroxide is in a range of 12 to 15; in Formula (A-1), R1 to R4 each independently represent a monovalent hydrocarbon group, and the total number of carbon atoms contained in R1 to R4 is 10 or greater.
    Type: Grant
    Filed: June 18, 2020
    Date of Patent: April 19, 2022
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Ming-Yen Chung, Masaru Takahama
  • Patent number: 11307500
    Abstract: A method for removing a resist layer is provided. A resist layer is formed with a material comprising a metal oxide core with organic ligands. A chlorine-containing compound or a methyl group-containing compound is globally applied onto the resist layer to allow the chlorine-containing compound or the methyl group-containing compound to perform a ligand exchange process with the resist layer so as to remove the resist layer through sublimation.
    Type: Grant
    Filed: April 10, 2019
    Date of Patent: April 19, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Christine Y Ouyang
  • Patent number: 11286444
    Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
    Type: Grant
    Filed: August 20, 2020
    Date of Patent: March 29, 2022
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer
  • Patent number: 11261337
    Abstract: A coating, a method for coating surfaces, and the coated surfaces. The method includes providing a substrate with a cleaned metal surface; contacting and coating the metal surface with an aqueous composition having a ph of from 0.5 to 7.0 and in the form of a dispersion and/or a suspension; optionally rinsing the organic coating; and drying and/or baking the organic coating, or optionally drying the organic coating and coating same with a similar or another coating composition thereto. The composition contains a complex fluoride in a quantity of 1.1 10?6 mol/l to 0.30 mol/l based on the cations. An anionic polyelectrolyte in a quantity of 0.01 to 5.0 wt % based on the total mass of the resulting mixture is added to an anionically stabilized dispersion made of film-forming polymers and/or a suspension made of film-forming inorganic particles.
    Type: Grant
    Filed: July 16, 2019
    Date of Patent: March 1, 2022
    Assignee: CHEMETALL GMBH
    Inventors: Daniel Wasserfallen, Michael Schwamb, Aliaksandr Frenkel, Vera Sotke, Wolfgang Bremser, Martin Droll, Ron Eilinghoff, Stephanie Gerold, Evgenija Niesen, Lars Schachtsiek, Manuel Traut, Oliver Seewald
  • Patent number: 11230668
    Abstract: The present invention provides an etchant less causing damage to IGZOs. The etchant of the present invention comprises hydroxyethanediphosphonic acid (A), one or more phosphonic acids (B), hydrogen peroxide (C), nitric acid (D), a fluorine compound (E), an azole (F), and an alkali (G), and is characterized in that the phosphoric acids (B) comprise one or more phosphonic acids selected from the group consisting of diethylenetriaminepentamethylenephosphonic acid, N,N,N?,N?-ethylenediaminetetrakismethylenephosphonic acid, and aminotrimethylenephosphonic acid and that the proportion of the hydroxyethanediphosphonic acid (A) is in the range of 0.01-0.1 mass % and the proportion of the phosphonic acids (B) is in the range of 0.003-0.04 mass %.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: January 25, 2022
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Youzou Yamada, Toshiyuki Goto
  • Patent number: 11192786
    Abstract: A composition including hydrogen peroxide is provided, which can be used for semiconductor device manufacturing and which exhibits an excellent storage stability and has a reduced effect of defects on a semiconductor substrate. Further, a method is provided for producing the composition including hydrogen peroxide, and a composition reservoir for storing the composition. The composition includes hydrogen peroxide, an acid, and an Fe component, in which the content of the Fe component is 10?5 to 102 in terms of mass ratio with respect to the content of the acid.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: December 7, 2021
    Assignee: FUJIFILM Corporation
    Inventor: Tetsuya Kamimura
  • Patent number: 11193094
    Abstract: The present invention relates to: a liquid composition suitable for the washing of a semiconductor element provided with a low-dielectric-constant interlayer insulating film; and a method for washing a semiconductor element. The liquid composition according to the present invention is characterized by containing tetrafluoroboric acid (A) in an amount of 0.01 to 30% by mass, or boric acid (B1) and hydrogen fluoride (B2) at a (boric acid)/(hydrogen fluoride) ratio of (0.0001 to 5.0/by mass)/(0.005 to 5.0% by mass), and having a pH value of 0.0 to 4.0. The liquid composition according to the present invention can reduce the damage of a low-dielectric-constant interlayer insulating film, cobalt or a cobalt alloy, alumina, a zirconia-based hard mask and a silicon nitride during the process of producing a semiconductor integrated circuit, and accordingly can be used suitably for removing dry etching residues occurring on the surface of the semiconductor integrated circuit.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: December 7, 2021
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Toshiyuki Oie, Priangga Perdana Putra, Akinobu Horita
  • Patent number: 11180697
    Abstract: Described herein is an etching solution suitable for the selective removal of polysilicon over silicon oxide from a microelectronic device, which comprises: water; at least one of a quaternary ammonium hydroxide compound; optionally at least one alkanolamine compound; a water-miscible solvent; at least one nitrogen containing compound selected from the group consisting of a C4-12 alkylamine, a polyalkylenimine, a polyamine, a nitrogen-containing heterocyclic compound, a nitrogen-containing aromatic compound, or a nitrogen-containing heterocyclic and aromatic compound; and optionally, a surfactant.
    Type: Grant
    Filed: November 12, 2019
    Date of Patent: November 23, 2021
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Wen Dar Liu, Yi-Chia Lee, Chung-Yi Chang
  • Patent number: 11180719
    Abstract: The invention relates to the use of a non-aqueous composition comprising an organic solvent and at least one particular siloxane-type additive for treating substrates comprising patterns having line-space dimensions of 50 nm or below and aspect ratios of 4 or more as well as a method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm, aspect ratios of greater or equal 4, or a combination thereof, (2) contacting the substrate at least once with a non-aqueous composition, and (3) removing the non-aqueous composition from the contact with the substrate, wherein the non-aqueous composition comprising an organic solvent and at least one of such siloxane-type additives.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: November 23, 2021
    Assignee: BASF SE
    Inventors: Daniel Loeffler, Mei Chin Shen, Sheng Hsuan Wei, Frank Pirrung, Lothar Engelbrecht, Yeni Burk, Andreas Klipp, Marcel Brill, Szilard Csihony
  • Patent number: 11161751
    Abstract: A composition can comprise a carrier including a liquid and an abrasive particulate contained in the carrier, the abrasive particulate having, on average, at least 10 wt % cerium oxide in the abrasive particulate and a cerium 3+ ratio (Ce 3+/total cerium) of at least 0.1. In another embodiment, a slurry composition can comprise a liquid carrier comprising water, cerium oxide particles, and free silicate ions, wherein a material removal rate when polishing a silicon oxide wafer can be is increased by at least 3% in comparison to a slurry composition not including free silicate ions.
    Type: Grant
    Filed: November 15, 2018
    Date of Patent: November 2, 2021
    Assignee: SAINT-GOBAIN CERAMICS & PLASTICS, INC.
    Inventors: Stephen Bottiglieri, Nabil Nahas, Douglas E. Ward, Chun-Lung Kuan
  • Patent number: 11149235
    Abstract: A cleaning composition and process for cleaning an in-process microelectronic device substrate, e.g., by post-chemical mechanical polishing (CMP) cleaning, to remove residue from a surface thereof, wherein the cleaning composition may be especially effective for cleaning a substrate surface that includes exposed metal such as cobalt, copper, or both, along with dielectric or low k dielectric material, and wherein the cleaning composition includes corrosion inhibitor to inhibit corrosion of the exposed metal.
    Type: Grant
    Filed: July 18, 2019
    Date of Patent: October 19, 2021
    Assignee: Entegris, Inc.
    Inventors: Daniela White, Elizabeth Thomas, Jun Liu, Michael White, Chao-Yu Wang, Donald Frye
  • Patent number: 11149231
    Abstract: A cleaning liquid containing at least one surfactant (A) selected from the group consisting of a polyoxyalkylene alkyl ether phosphoric acid, a polyoxyalkylene alkyl ether acetic acid and a polyoxyalkylene alkyl ether sulfonic acid and a chelating agent (C), which has a pH of 8 or more, and a cleaning liquid containing an oxidizing agent (B) and a chelating agent (C), which has a pH of 8 or more.
    Type: Grant
    Filed: March 31, 2020
    Date of Patent: October 19, 2021
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Ken Harada, Yutaro Takeshita, Toshiaki Shibata, Kan Takeshita
  • Patent number: 11127587
    Abstract: An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The compositions achieve highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material, copper interconnect material, or cobalt-containing materials.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: September 21, 2021
    Assignee: ENTEGRIS, INC.
    Inventors: Jun Liu, Elizabeth Thomas, Donald Frye
  • Patent number: 11127590
    Abstract: A method for forming a high-k oxide includes forming a nanofog of Al2O3 nanoparticles and conducting subsequent ALD deposition of a dielectric on the nanofog. A nanofog oxide is adhered to an inert 2D or 3D surface, the nano oxide consisting essentially of sub 1 nm Al2O3 nanoparticles. Additional oxide layers can be formed on the nanofog. Examples are from the group of selected from the group consisting of ZrO2, HfZrO2, silicon or other doped HfO2 or ZrO2, ZrTiO2, HfTiO2, La2O3, Y2O3, Ga2O3, GdGaOx, and alloys thereof, including the ferroelectric phases of HfZrO2, silicon or other doped HfO2 or ZrO2.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: September 21, 2021
    Assignee: The Regents of the University of California
    Inventors: Iljo Kwak, Kasra Sardashti, Andrew Kummel
  • Patent number: 11094526
    Abstract: A liquid composition for imparting alcohol-repellency to a semiconductor substrate material and a method for treating a semiconductor substrate surface using the liquid composition, are disclosed. The liquid composition contains: a surfactant (A) having a substituent of formula (1) (where n is an integer of 3 to 20), and an anionic hydrophilic group; and a compound (B) being selected from the group consisting of compounds having a polyethylenimine and a substituent of formula (2) or formula (3) (where R1, R2, R3 and R4 are each independently hydrogen or a C1-6 alkyl, alkenyl, alkynyl, or aryl, and X? is a fluoride ion, a chloride ion, a bromide ion, an iodide ion, a fluoroborate ion, a phosphate ion, an acetate ion, a trifluoroacetate ion, a sulfate ion, a hydrogen sulfate ion, a methane sulfate ion, a hydroxide ion, a perchlorate ion, or a nitrate ion).
    Type: Grant
    Filed: January 10, 2017
    Date of Patent: August 17, 2021
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Suguru Haraki, Kenji Shimada
  • Patent number: 11085011
    Abstract: The invention provides a removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP by-product contaminant material from the surface of the microelectronic device.
    Type: Grant
    Filed: July 31, 2019
    Date of Patent: August 10, 2021
    Assignee: ENTEGRIS, INC.
    Inventors: Elizabeth Thomas, Michael White, Daniela White, Atanu Kumar Das
  • Patent number: 11075073
    Abstract: A cleaning chemical composition suitable, for removing a passivation layer from a substrate, wherein the passivation layer comprises residues resulting from etching of said Substrate.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: July 27, 2021
    Inventors: Christian Pizzetti, Marine Audouin, Jérôme Daviot, Nicolas Pialot, Philippe Vernin
  • Patent number: 11028343
    Abstract: In one aspect, provided is a cleaning agent composition for a substrate for a semiconductor device, the cleaning agent composition having excellent cleaning properties against ceria and being capable of reducing a temporal change in the solubility of ceria. In one aspect, the present disclosure relates to a cleaning agent composition for a substrate for a semiconductor device, the cleaning agent composition containing a component A, a component B, a component C, and a component D, the component A being sulfuric acid; the component B being ascorbic acid; the component C being at least one of thiourea and dithiothreitol and the component D being water.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: June 8, 2021
    Assignee: KAO CORPORATION
    Inventors: Daisuke Kayakubo, Jun Naganuma
  • Patent number: 11017995
    Abstract: Composition, method and system for TiN hard mask removal from electronic circuitry devices, such as advanced pattern wafers have been disclosed. The cleaning compositions preferably comprise an etchant agent (also referred to as a base), an oxidizing agent, an oxidizing stabilizer (also referred to as a chelating agent), an ammonium salt, a corrosion inhibitor, and a solvent. Other optional additives could be provided. It is preferable that the pH of the cleaning composition be greater than 5.5. The cleaning composition is preferably free from dimethyl sulfoxide and tetramethylammonium hydroxide.
    Type: Grant
    Filed: July 19, 2019
    Date of Patent: May 25, 2021
    Assignee: Versum Materials US, LLC
    Inventors: Chao-Hsiang Chen, Yi-Chia Lee, Wen Dar Liu, Chung-Yi Chang
  • Patent number: 11016392
    Abstract: A solvent consisting essentially of: (A) a first component consisting of N,N-diethylacetamide (DEAC); (B) a second component consisting of 3-methoxy-N, N-dimethyl propionamide (M3DMPA); and (C) an optional third component consisting of one or more glycol ethers or glycol ether acetates; or a solvent consisting essentially of: (1) a first component consisting of one or more acyclic amides of Formula (I): and (2) an optional second component consisting of one or more of DEAC, M3DMPA, N,N-dimethylpropionamide, one or more glycol ethers or glycol ether acetates, and one or more cyclic amides of Formulae (II-IV).
    Type: Grant
    Filed: July 6, 2017
    Date of Patent: May 25, 2021
    Assignee: Dow Global Technologies LLC
    Inventors: Qi Jiang, Xin Jiang, Hua Ren, Eungkyu Kim, Jianhai Mu, Kaoru Ohba, William J. Harris
  • Patent number: 11004675
    Abstract: Disclosed are an anhydrous substrate cleaning composition, a substrate treating method, and a substrate treating apparatus. The anhydrous substrate cleaning composition includes an etching composite that provides fluorine, a solvent that dissolves the etching composite, and a binder that is a composite including phosphorous.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: May 11, 2021
    Assignee: SEMES CO., LTD.
    Inventors: Hae-Won Choi, Ki-Moon Kang, Kihoon Choi, Anton Koriakin, Chan Young Heo, Jaeseong Lee, Kwon Taek Lim, Yong Hun Kim, Sang Ho Lee
  • Patent number: 10988718
    Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating agent; and at least one polyelectrolyte. The composition achieves highly efficacious removal of the particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, and metal containing layers such as tungsten-containing layers.
    Type: Grant
    Filed: March 9, 2017
    Date of Patent: April 27, 2021
    Assignee: ENTEGRIS, INC.
    Inventors: Thomas Parson, Shrane-Ning Jenq, Steven Medd, Daniela White, Michael White, Donald Frye
  • Patent number: 10964549
    Abstract: A wafer is polished by performing a chemical reaction to change a property of a first portion of a material layer on the wafer using a first chemical substance. A first rinse is performed to remove the first chemical substance and retard the chemical reaction. A mechanical polishing process is then performed to remove the first portion of the material layer.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: March 30, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Shen-Nan Lee, Teng-Chun Tsai, Chu-An Lee, Chen-Hao Wu, Chun-Hung Liao, Huang-Lin Chao
  • Patent number: 10954480
    Abstract: Described herein is an aqueous composition for treating a substrate including patterns having line-space dimensions of 50 nm or below to prevent collapse of the patters, the composition comprising: a solvent system comprising water and a water-miscible organic solvent; a surface modifier that is a reaction product between an alkylamine and an organic acid; and an optional pH adjusting agent.
    Type: Grant
    Filed: September 25, 2018
    Date of Patent: March 23, 2021
    Assignee: Versum Materials US, LLC
    Inventors: Jhih Kuei Ge, Yi-Chia Lee, Wen Dar Liu, Tianniu Rick Chen
  • Patent number: 10947484
    Abstract: This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one carboxylic acid; 4) at least one Group II metal cation; 5) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 6) water. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.
    Type: Grant
    Filed: April 9, 2019
    Date of Patent: March 16, 2021
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Atsushi Mizutani, William A. Wojtczak, Yasuo Sugishima
  • Patent number: 10884338
    Abstract: An object of the present invention is to provide a chemical liquid which has excellent defect inhibition performance and hardly breaks a transfer pipe line that a device for manufacturing the chemical liquid includes at the time of manufacturing the chemical liquid. Another object of the present invention is to provide a chemical liquid storage body, a manufacturing method of a chemical liquid, and a manufacturing method of a chemical liquid storage body. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent and an ion of at least one kind of atom selected from the group consisting of an Fe atom, a Cr atom, a Ni atom, and a Pb atom, in which in a case where the chemical liquid contains one kind of the ion, a content of the metal ion is 0.1 to 100 mass ppt, in a case where the chemical liquid contains two or more kinds of the ions, a content of each of the metal ions is 0.
    Type: Grant
    Filed: March 27, 2019
    Date of Patent: January 5, 2021
    Assignee: FUJIFILM Corporation
    Inventor: Tetsuya Kamimura
  • Patent number: 10844333
    Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more nonionic polymers selected from the group consisting of poly-acrylamides, polyhydroxyethyl(meth)acrylates (PHE(M)A), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polymers of formula (I), and mixtures thereof, wherein R1 is hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, or sec-butyl, R2 is hydrogen or methyl, and n is an integer, (B) poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: November 24, 2020
    Assignee: BASF SE
    Inventors: Christian Daeschlein, Max Siebert, Michael Lauter, Piotr Przybylski, Julian Proelss, Andreas Klipp, Haci Osman Guevenc, Leonardos Leunissen, Roelf-Peter Baumann, Te Yu Wei
  • Patent number: 10844335
    Abstract: Disclosed is a post-chemical-mechanical-polishing cleaning composition, which is capable of effectively removing impurities from the surface of a wafer substrate after chemical mechanical polishing and also of preventing the corrosion of metal line materials, and which includes choline hydroxide, tetrabutylammonium hydroxide, 1,2,4-triazole, 2-hydroxypyridine, and the remainder of ultrapure water.
    Type: Grant
    Filed: March 6, 2018
    Date of Patent: November 24, 2020
    Assignee: YOUNG CHANG CHEMICAL CO., LTD
    Inventors: Seung Hun Lee, Seung Hyun Lee, Seong Hwan Kim
  • Patent number: 10829722
    Abstract: Disclosed herein are multi-component, azeotrope-like compositions containing trans-dichloroethylene, 1,1,1,3,3-pentafluorobutane, and 1,1,2,2-tetrafluoroethyl-2,2,2-trifluoroethyl ether. These compositions also form an azeotrope-like mixture with methanol. These compositions are useful as solvents in refrigeration flushing, oxygen system cleaning, foam blowing, and cleaning operations such as cold cleaning, vapor degreasing, and aerosol cleaners.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: November 10, 2020
    Assignee: ENVIRO TECH INTERNATIONAL, INC.
    Inventors: Richard J. DeGroot, Karl Loepke, Andrew Mavec
  • Patent number: 10804111
    Abstract: A method for roughening a surface of a substrate, including: applying a composition containing inorganic particles and organic resin to the surface of the substrate and drying and curing the composition to form an organic resin layer; and etching the substrate by a solution containing hydrogen fluoride, hydrogen peroxide, or an acid, to roughen the surface. Preferably, the solution contains hydrogen fluoride and ammonium fluoride or hydrogen peroxide and ammonia, the resin layer contains a ratio of the particles to the resin of 5 to 50 parts by mass to 100 parts by mass, and the composition is a mixture of silica sol wherein silica is dispersed as the inorganic particles in organic solvent or titanium oxide sol wherein titanium oxide is dispersed, with a solution of the organic resin.
    Type: Grant
    Filed: September 15, 2016
    Date of Patent: October 13, 2020
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Keisuke Hashimoto, Yasunobu Someya, Takahiro Kishioka, Rikimaru Sakamoto
  • Patent number: 10790187
    Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.
    Type: Grant
    Filed: January 17, 2018
    Date of Patent: September 29, 2020
    Assignee: ENTEGRIS, INC.
    Inventors: Emanuel I. Cooper, Makonnen Payne, WonLae Kim, Eric Hong, Sheng-Hung Tu, Chieh Ju Wang, Chia-Jung Hsu
  • Patent number: 10787628
    Abstract: The present disclosure is directed to non-corrosive cleaning compositions that are useful, e.g., for removing residues (e.g., plasma etch and/or plasma ashing residues) and/or metal oxides from a semiconductor substrate as an intermediate step in a multistep manufacturing process.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: September 29, 2020
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Thomas Dory, Emil A. Kneer, Tetsuya Kamimura
  • Patent number: 10741409
    Abstract: A method of manufacturing a semiconductor device includes preparing an object layer on a substrate; polishing the object layer with a first slurry including a first abrasive having a zeta potential of a first polarity; rinsing a surface of the object layer, using a rinsing solution including a chemical of a second polarity, opposite to the first polarity; and polishing the object layer with a second slurry including a second abrasive having a zeta potential of a second polarity, opposite to the first polarity.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: August 11, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyo Jung Kim, Ye Hwan Kim, Ki Hoon Jang, Byoung Ho Kwon, Bo Un Yoon
  • Patent number: 10731109
    Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. In addition, the cleaning compositions are compatible with ruthenium-containing materials.
    Type: Grant
    Filed: April 11, 2018
    Date of Patent: August 4, 2020
    Assignee: ENTEGRIS, INC.
    Inventors: Donald Frye, Jun Liu, Daniela White, Michael White
  • Patent number: 10711227
    Abstract: Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: July 14, 2020
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Wen Dar Liu, Yi-Chia Lee, William Jack Casteel, Jr., Tianniu Chen, Rajiv Krishan Agarwal, Madhukar Bhaskara Rao
  • Patent number: 10696933
    Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 5) at least one quaternary ammonium hydroxide; and 6) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: June 30, 2020
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer
  • Patent number: 10676668
    Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: June 9, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Neng-Jye Yang, Kuo Bin Huang, Ming-Hsi Yeh, Shun Wu Lin, Yu-Wen Wang, Jian-Jou Lian, Shih Min Chang
  • Patent number: 10651028
    Abstract: According to the present invention, it is possible to provide a cleaning solution which removes a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains 0.001-5 mass % of an alkaline earth metal compound, 0.1-30 mass % of an inorganic alkali and/or an organic alkali, and water.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: May 12, 2020
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Toshiyuki Oie, Kenji Shimada
  • Patent number: 10626353
    Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, water soluble sulfones, and water soluble ethers; 3) at least one boron-containing compound selected from the group consisting of boric acid, boronic acids, and salts thereof; and 4) water.
    Type: Grant
    Filed: February 7, 2018
    Date of Patent: April 21, 2020
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Emil A. Kneer, Yasuo Sugishima
  • Patent number: 10619126
    Abstract: The present disclosure is directed to non-corrosive cleaning compositions that are useful primarily for removing residues (e.g., plasma etch and/or plasma ashing residues) and/or metal oxides from a semiconductor substrate as an intermediate step in a multistep manufacturing process.
    Type: Grant
    Filed: July 14, 2016
    Date of Patent: April 14, 2020
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Yasuo Sugishima, Keeyoung Park, Thomas Dory
  • Patent number: 10590262
    Abstract: The present invention relates to novel surfactant mixtures comprising at least one compound A whose dynamic surface tension ?dyn. at a use concentration of 0.1% by weight and a bubble lifetime of 100 ms is <45 mN/m, and at least one compound B whose static surface tension ystat measured at a use concentration of 0.1% by weight is less than or equal to the static surface tension Ystat of compound A, to the use thereof as additives, for example in preparations for surface coating, such as paints, lacquers, protective coatings and special coatings in electronic or in optical applications. At least one compound in the novel surfactant mixture is a fluorosurfactant.
    Type: Grant
    Filed: July 26, 2013
    Date of Patent: March 17, 2020
    Assignee: Merck Patent GmbH
    Inventors: Joerg Pahnke, Gerhard Jonschker, Steffen Schellenberger, Mathias Kaiser
  • Patent number: 10577567
    Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues in the production of semiconductors. There is provided a stock composition comprising: a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; a corrosion inhibitor; and a combination of at least two or more polyprotic acids or salts thereof, wherein at least one said polyprotic acid or salt thereof contains phosphorous.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: March 3, 2020
    Assignee: Entegris, Inc.
    Inventors: Makonnen Payne, Emanuel I. Cooper, WonLae Kim, Eric Hong, Sean Kim