Abstract: The present invention is directed to compositions and method of use for treating semiconductor substrate comprising a sulfonium compound and a nucleophilic amine in the fabrication of electronic devices. Optionally, the said composition further comprises a chelating agent, and solvent. The pH of the said solution can be adjusted with the addition of acid or base. The semiconductor manufacturing processes include steps for post etch residue, photoresist removal and steps during chemical mechanical planarization and post chemical mechanical planarization.

Abstract: A method is provided for recovering a metal from electronic device deposition equipment including: providing deposition equipment wherein the deposition equipment is at least partially coated with a deposited metal; blasting the deposition equipment with a grit to remove at least some of the deposited metal to form a blasted grit and a removed metal; and separating at least some of the removed metal from the blasted grit to form a recovered metal.

Abstract: A cleaning composition for cleaning microelectronic or nanoelectronic devices, the cleaning composition having HF as the sole acid and sole fluoride compound in the composition, at least one primary solvent selected from the group consisting of sulfones and selenones, at least one polyhydroxyl alkyl or aryl alcohol co-solvent having metal ion complexing or binding sites, and water, and optionally at least one phosphonic acid corrosion inhibitor compound and the is free of amines, bases and other salts.

Abstract: The invention relates to a method for producing ionic liquids and ionic solids which takes recourse to a novel, especially modular production process. According to the inventive method, those salts from an ionic carbonate, hydrocarbonate or monoalkyl or monoaryl carbonate precursor (cationic synthesis module) are produced that comprise the desired quaternary ammonium, phosphonium, sulfonium or the analogous quaternary heteroaromatic cation. This precursor can be produced and stored efficiently and with a high degree of purity.

Abstract: There are provided a resist remover composition containing an amide solvent (A) represented by the following formula (1) and an organic amine compound (B), and a method for removing a resist using the resist remover composition, i.e., a resist remover composition that provides a sufficient removing capability even in a state where a resist is dissolved therein and is capable of being used for a prolonged period of time, and a method for removing a resist using the same. wherein R1 represents a linear, branched or cyclic alkyl group having from 1 to 6 carbon atoms; R2 and R3 each independently represent a linear or branched alkyl group having from 1 to 3 carbon atoms; and n represents an integer of from 0 to 2.

Abstract: The present invention relates to aqueous compositions comprising amidoxime compounds and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The compositions of the invention may optionally contain one or more other acid compounds, one or more basic compounds, and a fluoride-containing compound and additional components such as organic solvents, chelating agents, amines, and surfactants. The invention also relates to a method of removing residue from a substrate during integrated circuit fabrication.

Abstract: Provided are a composition for removing a photoresist and a method of manufacturing a semiconductor device using the composition. The composition includes about 60-90 wt % of dimethyl sulfoxide, about 10-30 wt % of a polar organic solvent, about 0.5-1.5 wt % of hydroxy alkyl ammonium and about 1-10 wt % of an amine containing no hydroxyl group.

Abstract: A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.

Abstract: Problem: To provide a cleaning liquid for lithography and a cleaning method using it for photoexposure devices. In a process of liquid immersion lithography, the cleaning liquid may efficiently clean the photoexposure device site (especially optical lens member) contaminated with the component released from photoresist and remove the contaminant, and in addition, the waste treatment for the cleaning liquid is easy, the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the cleaning liquid does not detract from the throughput in semiconductor production.

Abstract: The present invention discloses a method of making a photoresist stripper for removing a positive or negative tone photoresist, bonding adhesive, ink mark, and/or post etch residue from a semiconductor substrate, comprising a) an organic sulfonic acid, (b) a halogen-free organic solvent, and (c) an alkanolamine and (d) amine sulfonate or amine sulfonamide or mixtures thereof from semiconductor substrates.

Abstract: Provided are a composition for removing a photoresist and a method of manufacturing a semiconductor device using the composition. The composition includes about 60-90 wt % of dimethyl sulfoxide, about 10-30 wt % of a polar organic solvent, about 0.5-1.5 wt % of hydroxy alkyl ammonium and about 1-10 wt % of an amine containing no hydroxyl group.

Abstract: A composition comprising one or more water soluble organic solvents comprising a glycol ether; water; a fluoride containing compound provided that if the fluoride containing compound is ammonium fluoride than no additional fluoride containing compound is added to the composition; optionally a quaternary ammonium compound; and optionally a corrosion inhibitor is disclosed herein that is capable of removing residues from an article such as photoresist and/or etching residue. Also disclosed herein is a method for removing residues from an article using the composition disclosed herein.

Abstract: A process of forming an electronic device, by forming the source and drain contacts using photolithography, incorporating a self-assembled monolayer (SAM) over the electrical contacts to form an increased work function of the source and drain electrodes and further forming more favorable charge injection properties or within the channel region to improve film morphology and therefore improve charge transport. The SAM material is added to the photoresist stripper during a step of the photolithography process of forming electrical contacts.

Abstract: The invention relates to compositions and methods of removing silicon-based anti-reflective coatings/hardmask layers.

Abstract: A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).

Abstract: A photosensitive-resin remover composition includes an amine compound and de-ionized water, an amount of the de-ionized water being about 45% to about 99% by weight based on a total weight of the composition.

Abstract: A wet cleaning solution, comprising 0.01-3 wt % of an amphoteric imidazolium surfactant capable of forming a complex with metal ions, a pH adjuster, and balanced deionized water. The wet cleaning solution is substantially free of corrosion inhibitor other than the imidazolium amphoteric surfactant.

Abstract: The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.

Abstract: The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.

Abstract: Photoresist strippers and cleaning compositions of this invention are provided by non-aqueous cleaning compositions that are essentially non-corrosive toward copper as well as aluminum and that comprise at least one polar organic solvent, at least one hydroxylated organic amine, and at least one corrosion inhibitor polymer having multiple hydroxyl- or amino-functional groups pendant from the polymer backbone.

Abstract: A composition that includes 2-(2-aminoethylamino)-ethanol, at least one of a chelating agent and a corrosion inhibitor, and water. The composition is capable of removing organic, organometallic and metal oxide residues from semiconductor substrates. The invention also relates to a method of removing etching residue from a semiconductor substrate.

Abstract: The present invention provides a resist substrate treating solution and a method for pattern formation using that treating solution, and thereby problems such as foreign substances on the substrate surface, pattern collapse and pattern roughness can be easily solved at the same time. The treating solution comprises water and an alkylene oxide adduct of a primary amine having a hydrocarbon group of 11 to 30 carbon atoms or of ammonia. The method for pattern formation according to the invention comprises a step of treating the developed pattern with that treating solution.

Abstract: A cleaning solution for semiconductor devices or display devices containing a polyamine of a specified structure having two or more amino groups in adjacent positions of a carbon chain or a salt thereof and a cleaning method of semiconductor devices or display devices using the subject cleaning solution are provided. The cleaning solution for semiconductor devices or display devices of the present invention has high safety, brings a little burden on the environment and is able to easily remove etching residues on a semiconductor substrate in a short time; on that occasion, it is possible to achieve microfabrication without utterly corroding wiring materials; and furthermore, rinsing can be achieved with only water without necessity for use of, as a rinse solution, an organic solvent such as alcohols.

Abstract: A method of cleaning a substrate includes contacting a surface of a semiconductor substrate with a composition comprising a superacid. The semiconductor substrate may be a wafer.

Abstract: An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one oxidizing agent stabilizer comprising an amine species selected from the group consisting of primary amines, secondary amines, tertiary amines and amine-N-oxides, optionally at least one co-solvent, optionally at least one metal-chelating agent, optionally at least one buffering species, and water. The composition achieves highly efficacious cleaning of the residue material from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon.

Abstract: Described are anionic N-substituted fluorinated sulfonamide surfactants, and use thereof in cleaning and in acid etch solutions. The cleaning and etch solutions are used with a wide variety of substrates, for example, in the cleaning and etching of silicon oxide-containing substrates.

Abstract: Compositions and methods based on the use of fluoroalkene containing from 3 to 4 carbon atoms and at least one carbon-carbon double bond, such as HFO-1214, HFO-HFO-1233, or HFO-1354, having properties highly beneficial in solvent cleaning applications.

Abstract: A composition for removing particulate matter from integrated circuit substrates, including (a) one or more metal ion-free base; (b) a water-soluble metal ion-free onium salt of a polyhedral silsesquioxane; (c) an oxidizing agent; and (d) metal ion-free water, and a composition obtained by combining ingredients including (a), (b), (c) and (d). A process for removing particulate matter from a surface of an integrated circuit device, including applying to the surface the composition including (a), (b), (c) and (d) or applying to the surface the composition obtained by combining ingredients including (a), (b), (c) and (d).

Abstract: A cleaning composition of a semiconductor device for laminating an organosiloxane-based thin film and a photoresist layer in this order on a substrate having a low dielectric interlayer insulation film and a copper wiring or a copper alloy wiring, then applying selective exposure and development treatments to the subject photoresist layer to form a photoresist pattern, subsequently applying a dry etching treatment to the organosiloxane-based thin film and the low dielectric interlayer insulation film while using this resist pattern as a mask and then removing the organosiloxane-based thin film, a residue generated by the dry etching treatment, a modified photoresist having been modified by the dry etching treatment and an unmodified photoresist layer located in a lower layer than the modified photoresist, the cleaning composition containing from 15 to 20% by mass of hydrogen peroxide, from 0.0001 to 0.003% by mass of an amino polymethylene phosphonic acid, from 0.02 to 0.

Abstract: The present invention discloses a photoresist stripper for removing positive and negative tone photoresist, bonding adhesive, ink mark and post etch residue etc. from semiconductor substrates. The photoresist stripper comprises: a) one or more organic sulfonic acids with a structure of ?where R can be alkyl, substituted alkyl, aryl, substituted aryl and alkylaryl, and n is 1 or higher; and b) one or more alkanolamine; one or more alkanolamine with the structure of ?wherein R1 and R2 can be H, alkyl, aryl, alkylaryl, arylalkyl, alkyl alcohol, aryl alcohol, alkyaryl alcohol or arylalkyl alcohol and R3 is alkyl alcohol, aryl alcohol, alkyaryl alcohol or arylalkyl alcohol or the like. c) Optionally, one or more halogen free organic solvents. d) Optionally, one or more corrosion inhibitors Optionally, the photoresist stripper further comprises other surfactants.

Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.

Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate.

Abstract: The present invention is a method of cleaning to removal residue in semiconductor manufacturing processing, comprising contacting a surface to be cleaned with an aqueous formulation having a polymer selected from the group consisting of acrylamido-methyl-propane sulfonate) polymers, acrylic acid-2-acrylamido-2-methylpropane sulfonic acid copolymer and mixtures thereof and a quaternary ammonium hydroxide having greater than 4 carbon atoms or choline hydroxide with a non-acetylinic surfactant. The present invention is also a post-CMP cleaning formulation having the components set forth in the method above.

Abstract: Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to tungsten, and excellent removal performance in relation to a resist film or the like, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water-soluble organic solvent, water, an inorganic salt and an anti-corrosion agent represented by a general formula (1) below. In the general formula (1), R1 represents an alkyl group or an aryl group having 1-17 carbon atoms, and R2 represents an alkyl group having 1-13 carbon atoms.

Abstract: The present invention relates to a photoresist stripper composition for removing the photoresist in the manufacturing process of the semiconductor device. More particularly, the photoresist stripper composition comprises 3-20 wt % of hydrazine hydrate or amine compound; 20˜40 wt % of polar solvent; 0.01-3 wt % of corrosion inhibitor selected from the group consisting of imidazoline derivative, sulfide derivative, sulfoxide derivative, aromatic compound or aromatic compound with hydroxyl group; 0.01-5 wt % of monoalcohol compound of C2-C10; and 40-70 wt % of deionized water. The photoresist stripper composition for manufacturing the semiconductor can remove the photoresist film thermoset by hard bake, dry etching, ashing or ion implantation and denatured by the metallic by-product etched from the bottom metallic film in said process at low temperature easily and quickly, and minimize the corrosion of the bottom metallic wiring in the removing process of the photoresist.

Abstract: Back end photoresist strippers and cleaning compositions of this invention are provided by amino acid-free, non-aqueous cleaning compositions that are essentially non-corrosive toward copper as well as aluminum and that comprise at least one polar organic solvent, at least one hydroxylated organic amine, and at least one corrosion inhibitor compound with multiple hydroxyl functional groups that is a compound of the formula: T1-[(CR1R2)m—(CR3R4)n]p—(CR5R6)q-T2 where at least one of R1 and R2 OH and if one of R1 and R2 is not OH, it is selected from H, alkyl or alkoxy, m is a whole integer of 1 or greater, R3 and R4 are selected from H, alkyl or alkoxy, n is 0 or a greater whole positive integer, p is a whole integer of 1 or greater; at least one of R5 and R6 is OH and if one of R5 and R6 is not OH, it is selected from H, alkyl or alkoxy, q is a whole integer of 1 or greater; T1 and T2 are selected from H, alkyl, hydroxyalkyl, polyhydroxyalkyl, aminoalkyl, carbonylalkyl or amide groups or T1 and T2 may be co

Abstract: Photoresist strippers and cleaning compositions of this invention are provided by non-aqueous cleaning compositions that are essentially non-corrosive toward copper as well as aluminum and that comprise at least one polar organic solvent, at least one hydroxylated organic amine, and at least one corrosion inhibitor polymer having multiple hydroxyl- or amino-functional groups pendant from the polymer backbone.

Abstract: A sulfur-containing detergent composition for cleaning a semiconductor device having an aluminum wire, wherein the sulfur-containing detergent composition is capable of forming a protective film containing a sulfur atom on a surface of an aluminum film in a protective film-forming test; a semiconductor device comprising a protective film containing a sulfur atom on a surface of an aluminum wire, wherein sulfur atom is contained within a region of at least 5 nm in its thickness direction from the surface of the protective film; and method for manufacturing a semiconductor device, comprising the step of contacting an aluminum wire of the semiconductor device with the sulfur-containing detergent composition as defined above, thereby forming a sulfur-containing protective film on the surface of the aluminum wire. The semiconductor device can be suitably used in the manufacture of electronic parts such as LCD, memory and CPU.

Abstract: The present invention is directed to compositions and method of use for treating semiconductor substrate comprising a sulfonium compound and a nucleophilic amine in the fabrication of electronic devices. Optionally, the said composition further comprises a chelating agent, and solvent. The pH of the said solution can be adjusted with the addition of acid or base. The semiconductor manufacturing processes include steps for post etch residue, photoresist removal and steps during chemical mechanical planarization and post chemical mechanical planarization.

Abstract: A non-corrosive cleaning composition that is aqueous-based, non-hazardous and will not harm the environment and is useful primarily for removing both fresh and aged plasma etch residues from a substrate. The composition comprises (a) water; and (b) a synergistic combination of at least one tricarboxylic acid and at least one carboxylic acid. Preferably, the at least one carboxylic acid has a pKa value ranging from 3 to 6. Also, a method for removing etch residues from a substrate. The method includes the steps of (a) providing a substrate with etch residue; and (b) contacting the substrate with a cleaning composition comprising water; and a synergistic combination of at least one tricarboxylic acid and at least one carboxylic acid.

Abstract: The compositions and methods herein relate to the method for the removal of residues and contaminants from metal or dielectric surfaces. Particularly, a composition and method of cleaning residues after chemical mechanical polishing of a copper or aluminum surface of the semiconductor substrates.

Abstract: Compositions useful in semiconductor manufacturing for surface preparation and/or cleaning of wafer substrates such as semiconductor device precursor structures. The compositions can be employed for processing of wafers that have, or are intended to be further processed to include, copper metallization, e.g., in operations such as surface preparation, pre-plating cleaning, post-etching cleaning, and post-chemical mechanical polishing cleaning of semiconductor wafers. The compositions contain (i) alkanolamine, (ii) quaternary ammonium hydroxide and (iii) a complexing agent, and are storage-stable, as well as non-darkening and degradation-resistant in exposure to oxygen.

Abstract: An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one oxidizing agent stabilizer comprising an amine species selected from the group consisting of primary amines, secondary amines, tertiary amines and amine-N-oxides, optionally at least one co-solvent, optionally at least one metal-chelating agent, optionally at least one buffering species, and water. The composition achieves highly efficacious cleaning of the residue material from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon.

Abstract: A method of cleaning a substrate includes contacting a surface of a semiconductor substrate with a composition comprising a superacid. The semiconductor substrate may be a wafer.

Abstract: Compositions comprise a purine compound; an alcohol amine; a quaternary ammonium salt; an amino acid, and optionally an antioxidant. The compositions are useful in post-CMP cleaning processes. One particular advantage of these compositions is that they can effectively remove slurry contamination without increasing the roughness of the copper surface.

Abstract: A method for fabricating an integrated circuit device is disclosed. The method may include providing a substrate; forming a first material layer over the substrate; forming a patterned second material layer over the substrate; and removing the patterned second material layer with a fluid comprising a steric hindered organic base and organic solvent.

Abstract: Semiconductor processing compositions comprising amidoxime compounds having two or more amidoxime functional groups and their use in semiconductor processing to remove photoresist, polymeric materials, etching residues and copper oxides from semiconductor substrates, particularly substrates comprising copper, low-k dielectric material, titanium nitride, and/or titanium oxynitride.

Abstract: A microelectronic cleaning compositions of: a) from about 80% to about 99% by weight of the composition of at least one organic sulfone; b) from about 0.5% to about 19% by weight of the composition of water; and c) from about 0.5% to about 10% by weight of the composition of at least one component providing tetrafluoroborate ion, and d) optionally at least one polyhydric alcohol is especially useful to clean etch/ash residues from microelectronic substrates or device having both Si-based anti-reflective coatings and low-k dielectrics.

Abstract: A method and mineral acid-containing compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The mineral acid-containing composition includes at least one mineral acid, at least one sulfur-containing oxidizing agent, and optionally at least one metal ion-containing catalyst. The mineral acid-containing compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).

Abstract: An aqueous-based composition and process for removing photoresist, bottom anti-reflective coating (BARC) material, and/or gap fill material from a substrate having such material(s) thereon. The aqueous-based composition includes a fluoride source, at least one organic amine, at least one organic solvent, water, and optionally chelating agent and/or surfactant. The composition achieves high-efficiency removal of such material(s) in the manufacture of integrated circuitry without adverse effect on metal species on the substrate, such as copper, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.