Abstract: A process for producing a perfluorocyclicamine which includes electrolytically fluorinating a triallylamine in anhydrous liquid hydrogen fluoride. A constant boiling composition and process for producing the same is also described.

Abstract: Disclosed is a composition of resist stripper, which is advantageous in light of excellent strippability for residual resists after etching and ashing processes, and superior corrosion resistance to a metal film or a substrate formed with an inorganic material film. The stripping composition comprises 0.5-25 wt % of an electrolytic material having an equivalent conductivity of 300 &OHgr;−1cm2equiv−1 or higher in 0.001 N aqueous solution at 18° C., 60.0-99.4 wt % of water and 0.1-25.0 wt % of a corrosion inhibitor.

Abstract: A cleaning composition composed of a non-chelating organic acid, salt or ester thereof, and a chelating organic acid, salt or ester thereof that may be used to clean residue and scum from a substrate. The cleaning composition is suitable for cleaning residue and scum derived from photoresist.

Abstract: This invention relates to water-based alkaline cleaning solutions and their use as an environmentally safer replacement of organic solvents to remove photoresist, polyimide residue and other interlevel dielectric polymer coating residue from polymer film apply equipment, specifically, spin coater bowl and assembly parts consisting of a teflon top shield, stainless steel plate, and a bottom teflon spin coating bowl used in semiconductor device fabrication processes.

Abstract: Disclosed is a stripping composition for removing resist, comprising 5-50% by weight of at least one product obtained from the reaction of alkyl acetoacetate or acetic acid with fatty acid amine, and 50-95% by weight of a solvent selected from the group consisting of water, an aqueous 25 wt % tetramethyl ammonium hydroxide solution, glycol, and organic polar solvents. The stripping composition is so excellent in terms of stripability as to require only a rinsing process with ultra-pure water without passing through a stripping composition removal process with an air knife and a rinsing process with isopropyl alcohol. Also, with low volatility and toxicity, the composition produces as little pollution of the environment as possible, in addition to not encroaching on metal undercoats and pipe substrates such as O-rings, even without corrosion preventives.

Abstract: The present invention is a photoresist remover composition used in order to remove photoresist during the manufacturing process of semiconductor devices, such as large-scale integrated circuits and very large-scale integrated circuits. The present invention comprises 2-20 weight % of water-soluble hydroxylamine, 5-15 weight % of oxime compound containing 2 or 3 hydroxyl groups, and 30-55 weight % of alkyl amide. The photoresist remover composition according to the present invention can easily and quickly remove a photoresist layer that is cured by the processes of hard-bake, dry-etching, and ashing and a side-wall photoresist polymer that is produced from the lower metal film by the reaction of the photoresist with etching and ashing gases during these processes. Especially, the photoresist remover composition has a good property of removing the side-wall photoresist polymer produced from the layers of aluminum, aluminum alloy, and titanium nitride.

Abstract: The invention concerns an etching liquid appropriate for etching thermoplastic polyimide resins. The etching liquid it is composed of an aliphatic amino-alcohol whose number of carbon is equal or inferior to 4 having an amino group or an imino group and a hydroxyl group in a molecular thereof, and a tetra alkyl ammonium hydroxide aqueous solution.

Abstract: A composition for removing a copper-compatible resist includes about 10% to about 30% by weight of an amine compound, about 10% to about 80% by weight of a glycolether compound, and about 10% to about 80% by weight of a polar solvent.

Abstract: A method and composition for removing organic coatings or residues from a substrate is provided, which composition includes an organic carrier of ethanolamines and non-ionic alkylphenol ethoxylate surfactants and mixtures thereof and potassium hydroxide and being free of water.

Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): Boric Acid  2-17% Organic amine or mixture of amines 35-70% Water 20-45% Glycol solvent (optional)  0-5% Chelating agent (optional)  0-17% The preferred amines are: Monoethanolamine (MEA) Triethanolamine (TEA).

Abstract: Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (H2O) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (—COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (—SO3H) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds.

Abstract: The present invention relates to, inter alia, a composition for stripping photoresist from substrates comprising: about 5% to about 50% by weight of an alkyl substituted pyrrolidone, an alkyl substituted piperidone, or a mixture thereof, about 0.2% to about 20% of one or more alkanolamines, and about 50% to about 94% of a sulfoxide, sulfoxone, or mixture thereof. Advantageously, the composition can remove copper from a copper substrate at a rate of less than about 10 Å per minute when the substrate is immersed in the composition which is held at 70° C. for 30 minutes and rotated relative to the composition at about 200 revolutions per minute.

Abstract: The present invention relates to a resist stripper composition that is used to remove resists during semiconductor device manufacturing processes such as for large size integrated circuits, very large size integrated circuits, etc. The resist stripper composition comprises 3 to 10 wt % of an organic amine compound, 30 to 60 wt % of a solvent selected from a group consisting of DCMAc, DMF, DMI, NMP, etc., 30 to 60 wt % of water, 1 to 10 wt % of catechol, resorcin or a mixture thereof and 1 to 10 wt % of a C4-6 straight polyhydric alcohol.

Abstract: A two carbon atom linkage alkanolamine compound composition comprises the two carbon atom linkage alkanolamine compound, gallic acid or catechol, and optionally, an aqueous hydroxylamine solution. The balance of the composition is made up of water, preferably high purity deionized water, or another suitable polar solvent. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, comprises contacting the substrate with the composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of the two carbon atom linkage alkanolamine compound in the composition and process provides superior residue removal without attacking titanium or other metallurgy, oxide or nitride layers on the substrate.

Abstract: A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.1-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Abstract: Cleaning solutions for removing photoresist materials and a method of forming underlying layer patterns of semiconductor devices using the same. The cleaning solutions for removing photoresist include a solvent mixture of H2O and an organic solvent, an amine compound, a transition metal-removing material and an alkali metal-removing material, and may further include a hydrazine hydrate.

Abstract: A resist removing composition having a superior capability for removing a resist, polymer, organometallic polymer and etching by-products such as metal oxide, which does not attack underlying layers exposed to the composition and which does not leave residues after a rinsing step. The resist removing composition contains alkoxy N-hydroxyalkyl alkanamide and a swelling agent.

Abstract: A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.140% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Abstract: A solution for cleaning silicon semiconductors or silicon oxides comprising H2O2, NH4OH and at least one component A selected from the group consisting of fluoro-containing compounds and other ammonium salts than NH4OH, wherein the weight ratio of H2O2 to H2O is between 1:5 and 1:50, the weight ratio of NH4OH to H2O is between 1:5 and 1:50, and the molar ratio of component A to NH4OH is between 1:10 and 1:5000 is disclosed. The solution can achieve the efficacy equivalent to that of the conventional RCA two-step cleaning solution within a shorter time by one step and effectively remove contaminants such as organics, dust and metals from the surfaces of silicon semiconductors and silicon oxides without using strong acids such as HCl and H2SO4.

Abstract: A composition for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper or aluminum surface is an aqueous solution with a pH between about 3.5 and about 7. The composition contains a monofunctional, difunctional or trifunctional organic acid and a buffering amount of a quaternary amine, ammonium hydroxide, hydroxylamine, hydroxylamine salt, hydrazine or hydrazine salt base. A method in accordance with the invention for removal of chemical residues from a metal or dielectric surface comprises contacting the metal or dielectric surface with the above composition for a time sufficient to remove the chemical residues. A method in accordance with the invention for chemical mechanical polishing of a copper or aluminum surface comprises applying the above composition to the copper or aluminum surface, and polishing the surface in the presence of the composition.

Abstract: The invention relates generally to a system and method for improved cleaning of workpieces and workpiece cleaning tools. More specifically, the invention provides systems and methods for cleaning workpieces and sponges by manipulating the surface charge of one or more sponges by exposing them to various cleaning fluids. In one embodiment, sponges such as PVA sponges, having either positive, negative or neutral charges, are used to clean surfaces of workpieces such as semiconductor wafers. While cleaning a workpiece, a sponge may be exposed to a workpiece cleaning fluid, which may or may not alter the surface charge of the sponge. After cleaning the workpiece, the sponge may be exposed to a sponge cleaning fluid, which may or may not alter the surface charge of the sponge.

Abstract: A composition and method are provided for cleaning contaminants from the surface of a semiconductor wafer after the wafer has been chemically-mechanically polished. The cleaning composition comprises a carboxylic acid, an amine-containing compound, a phosphonic acid, and water. The cleaning composition is useful in removing abrasive remnants as well as metal contaminants from the surface of a semiconductor wafer following chemical-mechanical polishing.

Abstract: Cleaning solutions for removing photoresist resins remaining on the underlying layer patterns formed by photolithography process using the photoresist patterns as etching mask. The cleaning solution for removing photoresist comprises H2O as solvent, amine compounds, hydrazine hydrate, transition metal-removing material and alkali metal-removing material. Photoresist coated on the top portion of underlying layers can be rapidly and effectively removed by the disclosed cleaning solution. In addition, the cleaning solution is environment-friendly because H2O is used as the solvent, and has little effect on metal layers when underlying layers are formed of metals.

Abstract: Compositions and methods for processing (e.g., cleaning) substrates, such as semiconductor-based substrates, as well as processing equipment, include one or more compounds of Formula (I): wherein each R1, R2, R3, and R4 is independently H or an organic group.

Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing.

Abstract: A solution for washing away residue, comprising an aqueous solution of a water-soluble high molecular compound in which is dissolved at least one kind of dissolving agent selected from an amine and a fluoride. The washing solution is capable of effectively washing away the residue formed during the production of electronic circuits, is very lowly corrosive to the insulating films, low-dielectric interlayer insulating films and wirings, and offers an advantage of little generating foam.

Abstract: The present invention relates to chemical compositions and methods of use for cleaning CMP equipment, including the interiors of delivery conduits carrying CMP slurry to the necessary sites. The chemical compositions of the present invention are also useful for post-CMP cleaning of the wafer itself. Three classes of cleaning compositions are described, all of which are aqueous solutions. One class operates in a preferable pH range from about 11 to about 12 and preferably contains one or more non-ionic surfactants, one or more simple amines, a surfactant or sticking agent, such as one or more soluble dialcohol organic compounds, and one or more quaternary amines. A second class of cleaning composition operates in a preferable pH range of approximately 8.5 and contains one or more of citric acid, lactic acid, and oxalic acid. A third class of compositions is acidic, having a preferable pH range from about 1.

Abstract: A method for treating the surface of a substrate with a surface treatment composition, wherein the surface treatment composition comprises a liquid medium containing a complexing agent as a metal deposition preventive, the complexing agent comprising at least one member selected from Group A complexing agents and at least one member selected from Group B complexing agents as defined hereinafter.

Abstract: A two carbon atom linkage alkanolamine compound composition comprises the two carbon atom linkage alkanolamine compound, gallic acid or catechol, and optionally, an aqueous hydroxylamine solution. The balance of the composition is made up of water, preferably high purity deionized water, or another suitable polar solvent. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, comprises contacting the substrate with the composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of the two carbon atom linkage alkanolamine compound in the composition and process provides superior residue removal without attacking titanium or other metallurgy, oxide or nitride layers on the substrate.

Abstract: Disclosed are compositions useful for the removal of plasma etching polymeric residue from substrates, such as electronic devices. Also disclosed are methods of removing such plasma etching polymeric residue.

Abstract: An electronic parts cleaning solution comprising a hydroxide, water, metal corrosion inhibitor, and at least one compound represented by the following general formula (I) or (II): HO—((EO)x-(PO)y)z-H  (I) wherein, EO represents an oxyethylene group, PO represents an oxypropylene group, x and y represent integers satisfying the relation: x/(x+y)=0.05 to 0.4, and z represents a positive integer, R—[((EO)x-(PO)y)z-H]m  (II) wherein, EO, PO, x, y and z are the same as in the general formula (I), R represents a residual group obtained by removing a hydrogen atom on a hydroxyl group of alcohol or amine having a hydroxyl group, or a residual group obtained by removing a hydrogen atom on an amino group of amine, and m represents an integer of 1 or more.

Abstract: The invention provides aqueous alkaline compositions useful in the microelectronics industry for stripping or cleaning semiconductor wafer substrates by removing photoresist residues and other unwanted contaminants. The compositions typically contain (a) one or more metal ion-free bases at sufficient amounts to produce a pH of about 10-13 and one or more bath stabilizing agents having at least one pKa in the range of 10-13 to maintain this pH during use; (b) optionally, about 0.01% to about 5% by weight (expressed as % SiO.sub.2) of a water-soluble metal ion-free silicate; (c) optionally, about 0.01% to about 10% by weight of one or more chelating agents; (d) optionally, about 0.01% to about 80% by weight of one or more water-soluble organic co-solvents; and (e) optionally, about 0.01% to about 1% by weight of a water-soluble surfactant.

Abstract: This invention provides water-based compositions, particularly coating, ink, fountain solution and agricultural compositions, manifesting reduced equilibrium and dynamic surface tension by the incorporation of a surface tension reducing amount of an acetylenic diol ethylene oxide/propylene oxide adduct of the structure where r and t are 1 or 2, (n+m) is 1 to 30 and (p+q) is 1 to 30. Use of such adducts as surfactants in photoresist developer/electronics cleaning compositions is particularly advantageous. Also disclosed is a method for making random and block EO/PO adducts of acetylenic diols by reacting an acetylenic diol with EO and/or PO in the presence of a trialkylamine or Lewis acid.

Abstract: A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.1-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Abstract: A resist stripper which comprises a peroxide and a quaternary ammonium salt.

Abstract: This invention relates to water-based alkaline cleaning solutions and their use as an environmentally safer replacement of organic solvents to remove photoresist, polyimide residue and other interlevel dielectric polymer coating residue from polymer film apply equipment, specifically, spin coater bowl and assembly parts consisting of a teflon top shield, stainless steel plate, and a bottom teflon spin coating bowl used in semiconductor device fabrication processes.

Abstract: A process of removing residual slurry resulting from chemical mechanical polishing of a workpiece in which the workpiece is contacted with a composition of a supercritical fluid, said supercritical fluid including supercritical carbon dioxide and a co-solvent, and a surfactant.

Abstract: A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid and an amount of ammonia in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.18% by weight to about 0.22% by weight and the amount of ammonia is in a range from about 0.0225% by weight to about 0.0275% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.

Abstract: The invention provides aqueous alkaline compositions useful in the microelectronics industry for stripping or cleaning semiconductor wafer substrates by removing photoresist residues and other unwanted contaminants. The compositions typically contain (a) one or more metal ion-free bases at sufficient amounts to produce a pH of about 10-13 and one or more bath stabilizing agents having at least one pKa in the range of 10-13 to maintain this pH during use; (b) optionally, about 0.01 % to about 5% by weight (expressed as % SiO2) of a water-soluble metal ion-free silicate; (c) optionally, about 0.01% to about 10% by weight of one or more chelating agents; (d) optionally, about 0.01% to about 80% by weight of one or more water-soluble organic co-solvents; and (e) optionally, about 0.01% to about 1% by weight of a water-soluble surfactant.

Abstract: An aqueous alkaline cleaning composition for efficient removal of Mo, Cu, W, or Cu/Ni-based conductive paste residue from screening masks, associated screening equipment and the like by using alkali metal salt and/or tetramethyl ammonium salt of polyacrylic acid, acrylic acid-methacrylic acid co-polymer, polyaspartic acid, polylactic acid, poly(acrylic acid-co-maleic anhydride), poly(maleic acid), with excess alkali for pH adjustment in the range of about 11.5-13.5, and a surfactant which may be a medium foam, low foam or no-foam surfactant, and is preferably an amphoteric and/or non-ionic and/or ionic surfactant.

Abstract: There is provided corrosion inhibitors for aqueous stripping and/or cleaning compositions containing organic polar solvents. The inhibitors are aliphatic dicarboxylic acid compounds or their anhydrides. The inhibitors can be utilized in compositions which are free of oxidizing agents and in basic stripping and cleaning compositions.

Abstract: A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising at least one organic chelating agent and at least one polar solvent, wherein the chelating agent and polar solvent are in sufficient amounts to effectively remove inorganic compound residue from a semiconductor wafer. Preferably, the chelating agent is selected from the group consisting of 2,4-Pentanedione, Malonic acid, Oxalic acid, p-Toluenesulfonic acid, and Trifluoroacetic acid; and the polar solvent is selected from the group consisting of Water, Ethylene glycol, N-Methylpyrrolidone (NMP), Gamma butyrolactone (BLO), Cyclohexylpyrrolidone (CHP), Sulfolane, 1,4-Butanediol, and Butyl carbitol.

Abstract: A two carbon atom linkage alkanolamine compound composition comprises the two carbon atom linkage alkanolamine compound, gallic acid or catechol, and optionally, an aqueous hydroxylamine solution. The balance of the composition is made up of water, preferably high purity deionized water, or another suitable polar solvent. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, comprises contacting the substrate with the composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of the two carbon atom linkage alkanolamine compound in the composition and process provides superior residue removal without attacking titanium or other metallurgy, oxide or nitride layers on the substrate.

Abstract: A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Abstract: A composition and method are provided for cleaning contaminants from the surface of a semiconductor wafer after the wafer has been chemically-mechanically polished. The cleaning composition comprises a carboxylic acid, an amine-containing compound, a phosphonic acid, and water. The cleaning composition is useful in removing abrasive remnants as well as metal contaminants from the surface of a semiconductor wafer following chemical-mechanical polishing.

Abstract: A new solvent formulation is invented for removing cured adhesive and coating. It solves the problem that crosslink polymers only can be swelled, and a mechanical force has to be applied to remove the adhesive. The new solvent can dissolve the UV cured crosslink polymers very fast and clean the substrate meanwhile.

Abstract: A process of inhibiting a corrosion of metal plugs formed in integrated circuits is described. The corrosion inhibiting process includes providing a partially fabricated integrated circuit surface including the metal plugs on a polishing pad to carry out chemical-mechanical polishing, introducing slurry including a corrosion inhibiting compound on the polishing pad in sufficient concentration to inhibit corrosion of the metal plugs of the partially fabricated integrated circuit surface, and polishing the partially fabricated integrated circuit surface.

Abstract: A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.

Abstract: A method for treating the surface of a substrate with a surface treatment composition, wherein the surface treatment composition comprises a liquid medium containing a complexing agent as a metal deposition preventive, the complexing agent comprising at least one member selected from Group A complexing agents and at least one member selected from Group B complexing agents as defined hereinafter.

Abstract: Disclosed are compositions and methods useful for the removal of polymeric material from substrates, such as electronic devices. The compositions and methods disclosed are particularly suitable for removing polymer residues from advanced integrated circuit devices with reduced corrosion of metal surfaces.