Abstract: A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.

Abstract: This invention relates to a cleaning agent for a semi-conductor substrate, particularly, one having copper wirings on its surface, comprising a nonionic surfactant and a method for cleaning the same.

Abstract: A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Abstract: Non-aqueous cleaning compositions capable of removing cured polyimides and other polymers from a metal circuitry containing substrate such as a semiconductor device for rework and other purposes without any significant adverse affect on the circuitry are provided consisting essentially of alkanolamines, preferably monoethanolamine or monoethanolamine-diethanolamine mixtures and optionally with a solvent such as NMP in an amount less than about 50% by weight. A method is also provided for removing polyimide coatings and other polymers from semiconductor devices using the cleaning compositions of the invention.

Abstract: A non-corrosive photoresist stripping and cleaning composition, comprising:

Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing.

Abstract: For the stripping of photoresists, the invention proposes to use a mixture of dimethyl sulphoxide DMSO) or N-methylpyrrolidone (NMP) and 3-methoxypropylamine (MOPA). Advantageously, a little water and a corrosion inhibitor, such as sodium tolyltriazolate, are added to the mixture.

Abstract: There is provided a resist film removing composition used in a manufacture of a thin film circuit element having an organic insulation film that can remove a resist film remaining after etching easily without swelling the organic insulation film. The resist film removing composition comprises 50 to 90% by weight of an alkanolamine having 3 or more carbon atoms, 8 to 40% by weight of a water-miscible solvent and 2 to 30% by weight of water.

Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing.

Abstract: A method for treating the surface of a substrate with a surface treatment composition, wherein the surface treatment composition comprises a liquid medium containing a complexing agent as a metal deposition preventive, the complexing agent comprising at least one member selected from Group A complexing agents and at least one member selected from Group B complexing agents defined hereinafter.

Abstract: A cleaning solution is provided for cleaning copper-containing microelectronic substrates, particularly for post-CMP or Via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethanolamine, gallic acid, and water. The pH of the cleaning solution is greater than 10.

Abstract: Non-corrosive cleaning compositions that are aqueous based and useful for removing photoresist, plasma etch and CMP residues from a substrate. One preferred cleaning composition comprises: (i) a hydroxylamine or a hydroxylamine salt compound; (ii) at least one fluorine-containing compound; and (iii) water. Another cleaning composition comprises: (i) a compound selected from the group consisting of: an amine, a quatenary ammonium hydroxide, and ammonium hydroxide; (ii) at least one fluorine-containing compound; and (iii) water.

Abstract: A liquid cleaning composition comprising a solvating agent and a rinsing agent, the ratio of the vapor pressure of said rinsing agent to the vapor pressure of said solvating agent being at least about 20 and the use thereof to clean substrates that have soil adhered thereto.

Abstract: Cleaning solutions for removing contaminants from integrated circuit substrates comprise fluoroboronic acid and phosphoric acid. Methods of removing contaminants from integrated circuit substrates comprise contacting the substrates with cleaning solutions comprising fluoroboronic acid and phosphoric acid. The integrated circuit substrates are then contacted with aqueous solutions.

Abstract: The cleaner of the present invention contains, as an active ingredient, a polyphosphoric-acid-urea condensate or phosphoric-acid-urea polymer which is a reaction product from orthophosphoric acid and urea and is used for cleaning a metal surface and/or a glass surface in at least one process of a semiconductor device production process and a liquid crystal device production process. According to the present invention, an etching residue and impurities on metal (including semimetal) and glass surfaces can be cleaned off with high environmental and working safety and effectively without causing the problem of metal corrosion.

Abstract: A surface treatment composition containing a complexing agent as a metal deposition preventive in a liquid medium, in which the complexing agent is an ethylenediaminephenol derivative of the following general formula (1) or its salt: ##STR1## wherein X.sub.1 and X.sub.2 are hydroxyl groups; Y.sub.1 to Y.sub.8 are respectively independently a hydrogen atom, a hydroxyl group, a halogen atom, a carboxyl group, a phosphonic acid group, a sulfonic acid group, a carbonyl group, a nitro group, a nitroso group, an amino group, an imino group, a nitrilo group, a nitrile group, a thiocyanate group, a hydroxyamino group, a hydroxyimino group, or an alkyl or alkoxy group which may have a substituent, provided that at least one of Y.sub.1 to Y.sub.8 is not a hydrogen atom; Z.sub.1 to Z.sub.4 are respectively independently a hydrogen atom, a carboxyl group or a sulfonic acid group; and R.sub.1 to R.sub.4 are respectively independently a hydrogen atom or an alkyl group which may have a substituent.

Abstract: An etching residue remover for cleaning etching residue from a substrate, derived from a mixture of at least hydroxylamine, an alkanolamine which is miscible with said hydroxylamine, water, and, optionally, a chelating agent, wherein the hydroxylamine and the alkanolamine are present in amounts sufficient to clean etching residue from the substrate.

Abstract: A cleaning composition comprising at least one low molecular weight polyorganosiloxane selected from the group consisting of straight chain polydiorganosiloxane represented by a general formula: ##STR1## (wherein R.sup.1 is an organic group of single valence substituted by the same or different group or unsubstituted, and l is an integer from 0 to 5), and cyclic polydiorganosiloxane represented by a general formula: ##STR2## (wherein R.sup.1 is an organic group of single valence substituted by the same or different group or unsubstituted, and m is an integer from 3 to 7). To use it as a water system cleaning agent, polyoxyalkylene group containing polyorganosiloxane, a surfactant, and water are additionally mixed. Accordingly, a cleaning effect free from environmental destruction and contamination, equivalent to flon containing cleaning agents, and satisfactorily stable in terms of dispersion as a water system cleaning agent can be obtained.

Abstract: A cleaner composition for removing from within a microelectronic fabrication a copper containing residue layer in the presence of a copper containing conductor layer, and a method for stripping from within a microelectronic fabrication the copper containing residue layer in the presence of the copper containing conductor layer. The cleaner composition comprises: (1) a hydroxyl amine material; (2) an ammonium fluoride material; and (3) a benzotriazole (BTA) material. The cleaner composition contemplates the method for stripping from within the microelectronic fabrication the copper containing residue layer in the presence of the copper containing conductor layer.

Abstract: A priming concentrate composition is provided that functions both as a cleaning and adhesive promoting composition for cleaning a substrate and for bonding a subsequently applied photoresist to the substrate. The concentrate composition contains, as essential components, (a) an alcohol, (b) an alcohol ether, (c) an organic or poly acid and (d) a urea or thiourea-containing compound or derivative or analogue thereof or other compound of heteroatoms with the balance being water. The priming composition can be applied to a stationary or moving substrate, as a concentrate or further diluted with an aqueous medium, by brushing, spraying or immersing and the like.

Abstract: Non-corrosive cleaning compositions that are useful for removing photoresist and/or plasma etch residues from a substrate. The cleaning composition comprises: (i) a hydroxy-(lower alkyl)-hydrazine, (ii) water, and (iii) at least one compound selected from the group consisting of a carboxylic acid, a water-miscible organic solvent and mixtures thereof.

Abstract: Disclosed is a cleaning agent for cleaning paint piping without disassembling it in reduced number of steps and a process for cleaning the paint piping using the same. A cleaning agent based on N-methyl-2-pyrrolidone and containing an amine type solvent such as dimethylacetamide, ethanolamine, isopropanolamine and triethanolamine and a nonionic surfactant is circulated through the paint piping.

Abstract: A method for forming a patterned metal layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a blanket metal layer. There is then formed over the blanket metal layer a patterned photoresist layer. There is then etched through use of a plasma etch method while employing the patterned photoresist layer as a photoresist etch mask layer the blanket metal layer to form a patterned metal layer. The patterned metal layer so formed has a metal impregnated carbonaceous polymer residue layer formed upon a sidewall of the patterned metal layer. There is then stripped from the patterned metal layer the patterned photoresist layer through use of an oxygen containing plasma while simultaneously oxidizing the metal impregnated carbonaceous polymer residue layer to form an oxidized metal impregnated polymer residue layer upon the sidewall of the patterned metal layer.

Abstract: Cleaning solutions for removing contaminants from integrated circuit substrates comprise fluoroboric acid and phosphoric acid. Methods of removing contaminants from integrated circuit substrates comprise contacting the substrates with cleaning solutions comprising fluoroboric acid and phosphoric acid. The integrated circuit substrates are then contacted with aqueous solutions.

Abstract: Non-corrosive cleaning compositions that are aqueous based and useful for removing photoresist, plasma etch and CMP residues from a substrate. One preferred cleaning composition comprises: (i) a hydroxylamine or a hydroxylamine salt compound;(ii) at least one fluorine-containing compound; and (iii) water. Another cleaning composition comprises: (i) a compound selected from the group consisting of: an amine, a quatenary ammonium hydroxide, and ammonium hydroxide; (ii) at least one fluorine-containing compound; and (iii) water.

Abstract: A cleaning composition comprising at least one low molecular weight polyorganosiloxane selected from the group consisting of straight chain polydiorganosiloxane represented by a general formula: ##STR1## (wherein R.sup.1 is an organic group of single valence substituted by the same or different group or unsubstituted, and 1 is an integer from 0 to 5), and cyclic polydiorganosiloxane represented by a general formula: ##STR2## (wherein R.sup.1 is an organic group of single valence substituted by the same or different group or unsubstituted, and m is an integer from 3 to 7). To use it as a water system cleaning agent, polyoxyalkylene group containing polyorganosiloxane, a surfactant, and water are additionally mixed. Accordingly, a cleaning effect free from environmental destruction and contamination, equivalent to flon containing cleaning agents, and satisfactorily stable in terms of dispersion as a water system cleaning agent can be obtained.

Abstract: There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.

Abstract: A flux-removing, aqueous cleaning composition contains: (A) a solvent phase consisting essentially of water; and (B) a flux-removing phase containing an alkaline salt component and a surfactant formulation, the alkaline salt component containing at least one alkali metal salt, and the surfactant formulation containing at least one fluorinated surfactant and at least one N-alkylpyrrolidone surfactant. A method of removing rosin flux residues from a substrate, preferably a substrate of an electronic circuit assembly, involves (a) cleaning the substrate with the above-described aqueous cleaning composition for a period of time sufficient to substantially emulsify the soldering rosin flux residues to form emulsified rosin flux residues; and (b) removing the emulsified rosin flux residues from the substrate.

Abstract: Compositions are provided for removing grease or for cleaning substrates. The compositions include a lower (C.sub.1 -C.sub.4) alkyl ester of a C.sub.11 -C.sub.13 fatty acid, a non-cationic surfactant, and optionally, a coupling agent. Methods for removing grease or for cleaning are also provided.

Abstract: Stabilized, n-propyl bromide containing cleaning solvent compositions and a cleaning process are provided. The cleaning solvent compositions include an alcohol selected from 1-propanol and 2-butanol, including mixtures thereof, as a co-solvent so as to form azeotropic or azeotropic-like mixtures which have no fire or flash points.

Abstract: A cleaning process which comprises contacting a printed circuit board to which a residue of a flux is attached with a cleaning composition containing a first solvent and an organic compound, and then with a second solvent. The first solvent is an aliphatic hydrocarbon solvent having 5 to 20 carbon atoms. The organic compound is a 1-alkyl-2-pyrrolidone having 3 to 18 carbon atoms, a tri-alkylphosphine oxide having 3 to 8 carbon atoms or a di-alkylsulfoxide having 3 to 8 carbon atoms. The organic compound is in an amount of 10 to 300 g per liter of the hydrocarbon solvent. The cleaning composition does not contain a halogen compound.

Abstract: An aqueous flux removing composition is provided comprising alkali metal carbonate salts, an alkali metal silicate corrosion inhibitor and a surfactant formulation which comprises an N-alkylpyrrolidone. The N-alkylpyrrolidone is added in amounts sufficient to permit significantly faster cleaning speeds.

Abstract: To replace compositions based on CFC or CFHC in applications for cleaning solid surfaces (in particular defluxing), the invention proposes azeotropic or quasi-azeotropic compositions based on 1,1,1,2,2,4,4-heptafluorobutane and a C.sub.1 -C.sub.3 alcohol.

Abstract: An azeotropic composition includes a perfluorinated cycloaminoether and an organic solvent.

Abstract: A composition for finishing, preserving and cleaning lithographic printing plates which is composed of a polyol having a molecular weight in the range of from about 50 to about 3,000; a starch or dextrin hydrophilic film former; an alkyl benzene sulfonate amine salt; a composition of hydrocarbons containing less than about 10% aromatics and having a boiling point in the range of 175.degree. F. to 500.degree. F. and a flash point of above 100.degree. F.; a hydrogen, isooctyl, nonyl, decy or dodecyl substituted phenoxypoly(oxyethylene) ethanol surfactant having an HLB of 8 to 15; a C.sub.12 to C.sub.20 alcohol; mono-, di- or tri- ethanolamine; an organic or inorganic acid and water. The optional inclusion of a buffer salt and bacteriostat is preferred.

Abstract: A photoresist stripping composition containing:(a) 20-70% by weight of an organic polar solvent having a dipole moment of more than 3.5;(b) 70-20% by weight of alkanolamine compounds; and(c) 0.1-10% by weight of 6,6',6"-(1,3,5-triazine-2,4,6-triyltriimino) tris(hexanoic acid).

Abstract: A non-corrosive photoresist composition containing:(a) 20-70% by weight of an organic polar solvent having a dipole moment of more than 3.5;(b) 70-20% by weight of selected amine compounds;(c) an effective amount of a chelating reagent comprising a mono- or poly-valent acid type of ligand covalently attached to a polymeric or oligomeric backbone; and(d) optionally 0-10% by weight of selected amino acid having a hydroxyl group.