Abstract: Novel cleaning compositions, usable for removing a cured support material from a printed object obtained by additive manufacturing such as 3D inkjet printing are provided. The cleaning compositions are aqueous alkaline compositions containing a combination of two alkaline substances: an alkali metal hydroxide and an alkali metal silicate, each at a concentration of no more than 3 weight percents of the total weight of the composition. The cleaning compositions are characterized by high and constant dissolution rate, and are particularly useful for removing a cured support material that includes cross-linked polymeric chains such as cross-linked polyacrylate chains. Kits comprising the alkaline substances, and methods of fabricating a three-dimensional model object which utilize the cleaning compositions or the kits, and a three-dimensional model object fabricated thereby, are also provided.

Abstract: A composition for application to a metal substrate comprises an aqueous carrier, a hydroxide anion and/or a phosphate anion, and a corrosion inhibitor comprising an azole compound, a rare earth ion, an alkali earth metal ion, and/or a transition metal ion. A substrate or article includes the composition for application to a metal substrate and a coating on the composition. A method of fabricating a substrate comprises applying the composition to a substrate, allowing the composition to dry to form a dried composition, and applying a coating on the dried composition.

Abstract: The use of ferric hydroxycarboxylate as a chelator and builder for cleaning compositions is disclosed. The cleaning composition may be formulated for warewashing, laundering, and for other means of removing soils and includes a ferric hydroxycarboxylate, an alkalinity source and a surfactant system. The cleaning composition has a pH of between about 9 and about 12.

Abstract: A liquid composition comprising (A) at least one polar organic solvent, selected from the group consisting of solvents exhibiting in the presence of from 0.06 to 4% by weight of dissolved tetramethylammonium hydroxide (B), the weight percentage being based on the complete weight of the respective test solution (AB), a constant removal rate at 50° C. for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) at least one quaternary ammonium hydroxide, and (C) at least one aromatic amine containing at least one primary amino group, a method for its preparation and a method for manufacturing electrical devices, employing the liquid composition as a resist stripping composition and its use for removing negative-tone and positive-tone photoresists and post etch residues in the manufacture of 3D Stacked Integrated Circuits and 3D Wafer Level Packagings by way of patterning Through Silicon Vias and/or by plating and bumping.

Abstract: A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.

Abstract: A biodegradable concentrated neutral detergent composition comprises various chelate compounds, various corrosion inhibitors, an alkaline compound, at least one sequestrant, various surfactants and hydrotropes, and water. The detergent can be highly concentrated, has a good long term shelf life, and when diluted is very effective in cleaning metals such as surgical instruments and prevents corrosion resistance of the metal even in a hard water environment.

Abstract: A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.

Abstract: A non-aqueous solvent composition and method for cleaning and removing oleaginous materials such as hydraulic fluids from reinforced-fiber composites characterized as a cleaning composition free of ozone depletion materials, having a low vapor pressure, a flash point above 140° F., and consists essentially of cyclohexenes, isoparaffinic hydrocarbons, dearomatized hydrocarbons and corrosion inhibitors.

Abstract: A method of cleaning a substrate having a metal layer including copper or a copper-containing alloy, the method including cleaning the substrate using a cleaning liquid that includes a mercapto compound represented by one or both of the following formulas (1) and (2), and a solvent containing water and a water-soluble organic solvent: in which R represents a substituent group; m is an integer of 1 to 3; and n is an integer of 0 to 3, when m is 2 or 3, R may be the same or different; HS—(CH2)x—OH??(2), in which x is an integer of no less than 3.

Abstract: In one embodiment, a metal loss inhibitor concentrate is provided which contains water, (A) a component of dissolved organic compounds and polymers that contain at least two hydroxy moieties per molecule and an average of at least 0.4 hydroxy moieties per carbon atom; (B) a thiourea component; and (C) a dissolved component containing aryl and quaternary ammonium moieties; and, optionally: (D) a wetting agent, such as a component of an ethoxylate of an alcohol. Such solutions form useful inhibitor concentrates when combined with aqueous chelating cleaning solutions, wherein such solutions, when contacted with a metal surface, are effective in removing scale, smut and other deposits from the metal surface but exhibit a reduced tendency to attack or unduly etch the metal itself, or to inhibit the subsequent desired oxidation and dissolution of metallic copper deposits.

Abstract: A cleaning composition includes an alkali metal silicate, a polymer including maleic acid, vinyl acetate and alkyl acrylate monomers, and optionally water. The cleaning composition can include approximately 10% and approximately 90% by weight of at least one alkali metal silicate, greater than or equal to approximately 0.1% by weight of the polymer containing maleic acid, vinyl acetate and alkyl acrylate monomers, and approximately 0% to approximately 80% by weight water.

Abstract: The use of ferric hydroxycarboxylate as a chelator and builder for cleaning compositions is disclosed. The cleaning composition may be formulated for warewashing, laundering, and for other means of removing soils and includes a ferric hydroxycarboxylate, an alkalinity source and a surfactant system. The cleaning composition has a pH of between about 9 and about 12.

Abstract: The present invention is directed to a metal cleaner polisher and anti-tarnish solution which comprises the following ingredients per 32 fluid ounces: 5.00 to 10.00 percent mineral spirits by volume; 1.50 to 4.50 percent ethanol by volume; 0.50 to 1.50 percent ammonia by volume; 0.50 to 1.50 percent thiourea by volume; 0.25 to 1.00 percent sulfamic acid by volume; less than 0.20 percent disodium cocoampho-diproprionate by volume; and deionized water. Optionally, the following ingredients may be added individually, in any combination or all together: thickening/suspension agents; abrasive additives; and a modifying/stabilizing agent; and optionally varying amounts of fragrance and colorizing agents.

Abstract: The present invention is a formulation for wet clean removal of post etch and ash residue from a semiconductor substrate having a CoWP feature, comprising; Deionized water; Organic acid; Amine and/or quaternary ammonium hydroxide; wherein the formulation is compatible with the CoWP feature and either (a) the molar ratio of amine and/or quaternary ammonium hydroxide to organic acid provides a pH in the range of 7-14; or (b) the formulation includes a corrosion inhibitor. A method of using the formulation is also described.

Abstract: Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to ILD materials, and excellent removal performance in relation to a resist film and a bottom antireflective coating film, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water soluble organic solvent, water, and an inorganic base. The water soluble organic solvent contains a highly polar solvent having a dipole moment of no less than 3.0 D, a glycol ether solvent and a polyhydric alcohol, and the total content of the highly polar solvent and the glycol ether solvent is no less than 30% by mass relative to the total mass of the liquid for lithography.

Abstract: There is disclosed a cleaning composition comprising (i) 0.1 to 10 percent by weight of the cleaning composition of a biofilm removing detergent solution comprising a combination of an alkyl (C8-18) polysaccharide, a non-ionic surfactant and a nitrogen containing surfactant-biocide (ii) 2 to 80 percent by weight of the cleaning composition of one or more polar solvent (iii) 0.5 to 15 percent by weight of the cleaning composition of one or more primary amine (iv) two or more chelating agents (v) 0.1 to 5.0 percent by weight of the cleaning composition of an alkaline buffer system providing a pH of about 11.5 to 13.3 in aqueous solution (vi) 0.005 to 5.0 percent by weight of the cleaning composition of an alkoxyaminosilane. Also disclosed is a process of cleaning, decontaminating and/or passivating metallic surgical instruments and/or equipment using the composition of the invention.

Abstract: A warewashing detergent composition is provided for use for in cleaning of alkaline sensitive metals such as aluminum or aluminum containing alloys. The compositions include alternatives to sodium tripolyphosphate and/or other phosphorous containing raw materials, while retaining cleaning performance and corrosion prevention. According to the invention, a synergistic combination of polyacrylic and polymaleic polymers is used as corrosion inhibitors in traditional alkaline detergent compositions.

Abstract: A method of dissolving and/or inhibiting the deposition of scale on a surface of a system comprises the step of bringing the surface of the system into contact with a composition. The composition can comprise from about 3 to about 15 parts by weight of a chelating component. The chelating component is selected from the group of MGDA, NTA, HEDTA, GLDA, EDTA, DTPA, and mixtures thereof. The composition can further comprise from about 3 to about 15 parts by weight of an acidic component, which is different than the chelating component. The composition can further comprise at least about 60 parts by weight of water. Each of the parts by weight ranges above are based on 100 parts by weight of the composition. The composition may further comprise a surfactant component and/or a corrosion inhibitor.

Abstract: The present invention relates to corrosion inhibitor systems, in particular to cleaning and corrosion inhibiting compositions for surfaces of aluminum or colored metals and alloys thereof under alkaline conditions, especially in the food and pharmaceutical industries. The cleaning and corrosion inhibiting compositions comprise as a corrosion inhibitor at least one alkyleneoxy alkylphosphate di- or triester having the general formula where Z is either —O-M or —O-(AO)n2-Alkyl wherein M is an ammonium, alkali metal or alkaline earth metal cation, Alkyl is a C5-C22 alkyl or alkylaryl group, AO is a C2-4-alkylene oxide unit and n1, n2 and n3 each are integers from 2 to 10.

Abstract: Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to tungsten, and excellent removal performance in relation to a resist film or the like, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water-soluble organic solvent, water, an inorganic salt and an anti-corrosion agent represented by a general formula (1) below. In the general formula (1), R1 represents an alkyl group or an aryl group having 1-17 carbon atoms, and R2 represents an alkyl group having 1-13 carbon atoms.

Abstract: A stripping and cleaning composition for cleaning microelectronics substrates, the composition comprising: at least one organic stripping solvent, at least one nucleophilic amine, at least one non-nitrogen containing weak acid in an amount sufficient to neutralize from about 3% to about 75% by weight of the nucleophilic amine such that the stripping composition has an aqueous pH of from about 9.6 to about 10.9, said weak acid having a pK value in aqueous solution of 2.0 or greater and an equivalent weight of less than 140, at least one metal-removing compound selected from the group consisting of diethylene glycol and diethylene glycolamine, and water, and method for cleaning microelectronic substrates with these compositions.

Abstract: A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and optionally a surfactant. The composition may further include dense fluid. The compositions effectively remove the photoresist and/or post-etch residue material from the microelectronic device without substantially over-etching the underlying silicon-containing layer(s) and metallic interconnect materials.

Abstract: The present invention relates to semi-aqueous formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, as well as contaminations. The formulation comprises: an alkanolamine, a water miscible organic co-solvent, a quarternary ammonium compound, a non-free acid functionality corrosion inhibitor, and remainder water. The pH is greater than 9.

Abstract: Embodiments of the present invention describe a removal chemistry for removing hard mask. The removal chemistry is a wet-etch solution that removes a metal hard mask formed on a dielectric layer, and is highly selective to a metal conductor layer underneath the dielectric layer. The removal chemistry comprises an aqueous solution of hydrogen peroxide (H2O2), a hydroxide source, and a corrosion inhibitor. The hydrogen peroxide and hydroxide source have the capability to remove the hard mask while the corrosion inhibitor prevents the metal conductor layer from chemically reacting with the hydrogen peroxide and hydroxide source during the hard mask removal.

Abstract: A chelating composition suitable for low-temperature use or storage is disclosed. The chelating compositions include 20 to 70 wt. percent of a polar solvent and 30 to 80 wt. percent of a first component of the formula: wherein R is a hydroxyalkyl group and each R? is individually selected from the group consisting of hydrogen, unsubstituted or inertly substituted alkyl groups, carbonyl-containing alkyl groups, carboxylate-containing alkyl groups, hydroxyalkyl groups and alkoxy groups; R? is selected from the group consisting of hydrogen, unsubstituted or inertly substituted alkyl groups; carbonyl-substituted alkyl groups, carboxylate-containing alkyl groups, hydroxyalkyl groups and alkoxy groups; M1 and M2 are alkali metal ions, wherein the M1 has a higher atomic weight than M2; wherein x+y=n and the mole fraction of M1 is greater than 0.70 to 1. Methods of suppressing crystallization and methods of cleaning surfaces employing the compositions described herein are also disclosed.

Abstract: The present invention relates to corrosion inhibitor systems, in particular to cleaning and corrosion inhibiting compositions for surfaces of aluminum or colored metals and alloys thereof under alkaline conditions, especially in the food and pharmaceutical industries. The cleaning and corrosion inhibiting compositions comprise as a corrosion inhibitor at least one alkyleneoxy alkylphosphate di- or triester having the general formula (I) where Z is either —O-M or —O-(AO)n2— Alkyl wherein M is an ammonium, alkali metal or alkaline earth metal cation, Alkyl is a C5-C22 alkyl or alkylaryl group, AO is a C2-4-alkylene oxide unit and n1, n2 and n3 each are integers from 2 to 10.

Abstract: A chelating composition suitable for low-temperature use or storage is disclosed. The chelating compositions include 20 to 70 wt. percent of a polar solvent and 30 to 80 wt. percent of a first component of the formula: (I) wherein R is a hydroxyalkyl group and each R? is individually selected from the group consisting of hydrogen, unsubstituted or inertly substituted alkyl groups, carbonyl-containing alkyl groups, carboxylate-containing alkyl groups, hydroxyalkyl groups and alkoxy groups; R? is selected from the group consisting of hydrogen, unsubstituted or inertly substituted alkyl groups; carbonyl-substituted alkyl groups, carboxylate-containing alkyl groups, hydroxyalkyl groups and alkoxy groups; M1 and M2 are alkali metal ions, wherein the M1 has a higher atomic weight than M2; wherein x+y=n and the mole fraction of M1 is greater than 0.70 to 1. Methods of suppressing crystallization and methods of cleaning surfaces employing the compositions described herein are also disclosed.

Abstract: A biodegradable acid cleaning composition for cleaning stainless steel, and other surfaces is disclosed. The composition comprises urea sulfate in combination with gluconic acid which serves as a corrosion inhibitor. The composition retains the cleaning and corrosion prevention properties of similar phosphoric acid solutions but is safe for the environment and is less expensive to produce. Applicants have surprisingly found that the traditionally alkaline corrosion inhibitor, gluconic acid, can work effectively in an acidic cleaning composition.

Abstract: The present invention relates to an acidic, aqueous composition which comprises a thiodiglycol alkoxylate for treating metallic surfaces. The invention furthermore relates to the use of one or more compound(s) of the general formula (I) as a corrosion inhibitor.

Abstract: The present invention relates to compositions including a water soluble magnesium salt, water soluble calcium salt, and silicate or carbonate, which have a beneficial effect on corrosion during cleaning. The present compositions can reduce corrosion of glass or aluminum. The present invention also relates to methods employing these compositions.

Abstract: Photoresist strippers and cleaning compositions of this invention are provided by non-aqueous cleaning compositions that are essentially non-corrosive toward copper as well as aluminum and that comprise at least one polar organic solvent, at least one hydroxylated organic amine, and at least one corrosion inhibitor polymer having multiple hydroxyl- or amino-functional groups pendant from the polymer backbone.

Abstract: A non-corrosive cleaning composition that is aqueous-based, non-hazardous and will not harm the environment and is useful primarily for removing both fresh and aged plasma etch residues from a substrate. The composition comprises (a) water; and (b) a synergistic combination of at least one tricarboxylic acid and at least one carboxylic acid. Preferably, the at least one carboxylic acid has a pKa value ranging from 3 to 6. Also, a method for removing etch residues from a substrate. The method includes the steps of (a) providing a substrate with etch residue; and (b) contacting the substrate with a cleaning composition comprising water; and a synergistic combination of at least one tricarboxylic acid and at least one carboxylic acid.

Abstract: The present invention relates to compositions including a water soluble magnesium salt, water soluble calcium salt, and gluconate, which have a beneficial effect on corrosion during cleaning. The present compositions can reduce corrosion of glass, aluminum, or steel. The present invention also relates to methods employing these compositions.

Abstract: The present invention relates generally to a process and chemical composition for the removal of adherent niobium-rich second-phase particles (SPPs) from pickled niobium-containing zirconium alloys which includes applying to the alloy surface a chemical composition comprising alkaline hydrogen peroxide; an alkali metal meta-silicate; and a magnesium salt.

Abstract: To stabilize normal propyl bromide by using a novel stabilizer which is friendly to the environment. A composition includes, relative to 100 parts by weight of normal propyl bromide, 0.1 parts by weight to 10 parts by weight of at least one stabilizer selected from the following (A) to (D): (A) 3,4-epoxycyclohexenylmethyl 3?,4?-epoxycyclohexene carboxylate; (B) ?-caprolactone modified 3,4-epoxycyclohexylmethyl 3?,4?-epoxycyclohexane carboxylate; (C) vinylcyclohexene monoxide; and (D) 1,2:8,9-diepoxylimonene.

Abstract: A corrosion inhibitor composition comprising one or more organic solvents, one or more corrosion inhibitor intermediates and about 0.1 to about 20 weight percent of one or more iodide salts dissolved in said composition and methods of using the corrosion inhibitor composition in acid fracturing and matrix acid stimulation of subterranean formations.

Abstract: Back end photoresist strippers and residue compositions are provided by non-aqueous compositions that are essentially non-corrosive toward copper as well as aluminum and that comprise a polar organic solvent, a hydroxylated amine, and as a corrosion inhibitor fructose.

Abstract: The present invention relates to compositions including a water soluble magnesium salt, water soluble calcium salt, and gluconate, which have a beneficial effect on corrosion during cleaning. The present compositions can reduce corrosion of a variety of surfaces including glass, aluminum, chrome, copper, and steel. The present invention also relates to methods employing these compositions.

Abstract: The present invention relates to compositions including a water soluble magnesium salt, water soluble calcium salt, and gluconate, which have a beneficial effect on corrosion during cleaning. The present compositions can reduce corrosion of glass, aluminum, or steel. The present invention also relates to methods employing these compositions.

Abstract: There is provided an alkaline cleaning of aluminum alloy, in which the attained corrosion resistance is equal or superior to the acidic cleaning agent, and which mitigates the disadvantages of the acidic cleaning agent, such as corrosion of plant, processing of the waste liquid, and energy cost, and which attains improved productivity. The cleaning liquid from 0.5 to 40 g/L in total of one or more alkali builders selected from alkali metal hydroxide, alkali metal carbonate, inorganic alkali metal phosphate and alkali metal silicate, from 0.2 to 10 g/L of one or more of organic phosphonic acid and its salt (A), from 0.001 to 2 g/L of one or more metallic ions (B) selected from metallic ions having from 5.0 to 14.0 of stability constant with the organic phosphonic acid and its salt, and from 0.1 to 10 g/L of surfactant. Particularly, the weight ratio of (A):(B) is in a range of from 100:0.05˜20.

Abstract: A cleaning composition based on an aqueous or non-petroleum solvent, and useful for cleaning exterior surfaces such as aircraft exterior surfaces and other metal, glass, rubber and polymer surfaces possesses solvent-like properties with respect to greasy soils; inhibits corrosion and degradation of rubber; is biodegradable; forms a stable emulsion with water; remains optically clear and stable at multiple dilutions with water; and conforms to MIL-PRF 87937D. The composition includes at least one fatty acid methyl ester, at least one ethoxylated alcohol having an HLB ranging from about 10 to about 14, at least one alkyl polyglycoside having an HLB ranging from about 10 to about 14, at least one hydrotrope, an alkali metal silicate, at least one corrosion inhibitor in an amount effective to prevent corrosion on metals, and water.

Abstract: This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an alkaline chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer.

Abstract: A surface treatment process for a metal article includes the following steps. Firstly, a metal article, made of at least one of copper and an alloy thereof, is provided. Secondly, a surface of the metal article is degreased. Thirdly, the surface of the metal article is activated in an acid solution. Finally, the surface of the metal article is deactivated by submersion in an antioxidant agent.

Abstract: A chemical solution and process for the decontamination of chemical warfare agents. More particularly, a process for the decontamination of the vesicant HD by oxidation to its corresponding sulfoxide and nerve agents VX and GD by perhydrolysis to their non-toxic phosphonic acids using environmentally safe reactants, specifically a citrate/bicarbonate/molybdate peroxide solution.

Abstract: This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an alkaline chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer.

Abstract: The invention relates to a method for cleaning semiconductor surfaces to achieve to removal of all kinds of contamination (particulate, metallic and organic) in one cleaning step. The method employs a cleaning solution for treating semiconductor surfaces which is stable and provokes less or no metal precipitation on the semiconductor surface.

Abstract: The invention relates to a method for cleaning semiconductor surfaces to achieve to removal of all kinds of contamination (particulate, metallic and organic) in one cleaning step. The method employs a cleaning solution for treating semiconductor surfaces which is stable and provokes less or no metal precipitation on the semiconductor surface.

Abstract: Cleaning compositions suitable for cleaning microelectronic structures having silicon dioxide, low-k or high-k dielectrics and copper or aluminum metallizations contain an oxidizing agent and a polar organic solvent selected from amides, sulfones, sulfolenes, selenones and saturated alcohols, and optionally other components.

Abstract: A method of treating the surfaces of medical instruments which are contaminated with prions includes contacting the surface with a composition containing a source of peroxide ions, such as hydrogen peroxide, at a molar concentration of at least 1.5M peroxide (equivalent to approximately 5% hydrogen peroxide) and preferably, about 2M peroxide (approximately 7% hydrogen peroxide). The composition is optionally in the form of a gel. The composition is retained in contact with the surfaces for about 1-2 hours until all or substantially all prion contamination is removed.

Abstract: A polish composition for metallic surfaces containing a polish and abrasive alumina nanoparticles in a water in oil emulsion composition composed of surfactants, suspending agents, and aluminum oxide particles of high purity of 200 nanometers or less having a median particle diameter of 0.24 microns together with an aliphatic hydrocarbon solvent producing a polish having cleaning properties and an enhanced high glossed surface from a single application.