Publication number: 20110241175
Abstract: A hardmask composition for forming a resist underlayer film, a process for producing a semiconductor integrated circuit device, and a semiconductor integrated circuit device, the hardmask composition including an organosilane polymer, and a stabilizer, the stabilizer including one of acetic anhydride, methyl acetoacetate, propionic anhydride, ethyl-2-ethylacetoacetate, butyric anhydride, ethyl-2-ethylacetoacetate, valeric anhydride, 2-methylbutyric anhydride, nonanol, decanol, undecanol, dodecanol, propylene glycol propyl ether, propylene glycol ethyl ether, propylene glycol methyl ether, propylene glycol, phenyltrimethoxysilane, diphenylhexamethoxydisiloxane, diphenylhexaethoxydisiloxane, dioctyltetramethyldisiloxane, hexamethyltrisiloxane, tetramethyldisiloxane, decamethyltetrasiloxane, dodecamethylpentasiloxane, hexamethyldisiloxane, and mixtures thereof.
Type:
Application
Filed:
June 15, 2011
Publication date:
October 6, 2011
Inventors:
Sang Ran KOH, Sang Kyun KIM, Sang Hak LIM, Mi Young KIM, Hui Chan YUN, Do Hyeon KIM, Dong Seon UH, Jong Seob KIM
Patent number: 8004177
Abstract: Provided are a conducting polymer composition and an electronic device including a layer formed using the conducting polymer composition. The conducting polymer composition contains: at least one compound selected from the group consisting of a siloxane compound of formula (1) below, a siloxane compound of formula (2) below, and a silane compound of formula (3) below; and a conducting polymer: where R1, R2, X1, X2, X3, X4, X5, X6, X7, X8, X9, X10, X11, X12, X13, X14, X15, X16, X17, X18, X19, X20, D, p, m, q, and r are the same as described in the detailed description of the invention. The electronic device including a layer formed using the conducting polymer composition has excellent electroluminescent characteristics and long lifetime.
Type:
Grant
Filed:
September 8, 2006
Date of Patent:
August 23, 2011
Assignee:
Samsung Mobile Display Co., Ltd.
Inventors:
Tae-Woo Lee, Jong-Jin Park, Yi-Yeol Lyu, Lyong-Sun Pu, Sang-Yeol Kim, Mu-Gyeom Kim, Eun-Sil Han