Abstract: Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.

Abstract: Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: XmR1nHpSi(NR2R3)4-m-n-p??I wherein X is selected from Cl, Br, I; R1 is selected from linear or branched C1-C10 alkyl group, a C2-C12 alkenyl group, a C2-C12 alkynyl group, a C4-C10 cyclic alkyl, and a C6-C10 aryl group; R2 is selected from a linear or branched C1-C10 alkyl, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; R3 is selected from a branched C3-C10 alkyl group, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R2 and R3 are linked or not linked to form a ring.

Abstract: This invention relates to organometallic precursor compounds represented by the formula (H)mM(R)n wherein M is a metal or metalloid, R is the same or different and is a substituted or unsubstituted, saturated or unsaturated, heterocyclic radical containing at least one nitrogen atom, m is from 0 to a value less than the oxidation state of M, n is from 1 to a value equal to the oxidation state of M, and m+n is a value equal to the oxidation state of M, a process for producing the organometallic precursor compounds, and a method for producing a film or coating from the organometallic precursor compounds.

Abstract: Metallated aminosilane compounds for use as functional initiators in anionic polymerizations and processes for producing an aminosilane-functionalized polymer using the metallated aminosilane compounds to initiate anionic polymerization of at least one type of anionically polymerizable monomer. Preferred use of the metallated aminosilane compounds results in rubber compositions for use in tires comprising an aminosilane functionalized polymer.

Abstract: This invention relates to organometallic compounds represented by the formula HaM(NR1R2)x(NR3H)y(NH2)z wherein M is a metal or metalloid, each of R1, R2 and R3 is the same or different and is independently a hydrocarbon group or a heteroatom-containing group, a is a value from 0 to 3, x is a value from 0 to 3, y is a value from 0 to 4, z is a value from 0 to 4, and a+x+y+z is equal to the oxidation state of M, provided that at least one of y and z is a value of at least 1, a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.

Abstract: This invention relates to organometallic compounds represented by the formula HaM(NR1R2)x(NR3H)y(NH2)z wherein M is a metal or metalloid, each of R1, R2 and R3 is the same or different and is independently a hydrocarbon group or a heteroatom-containing group, a is a value from 0 to 3, x is a value from 0 to 3, y is a value from 0 to 4, z is a value from 0 to 4, and a+x+y+z is equal to the oxidation state of M, provided that at least one of y and z is a value of at least 1, a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.

Abstract: Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.

Abstract: Described herein are materials for use in electrolytes that provide a number of desirable characteristics when implemented within batteries, such as high stability during battery cycling up to high temperatures high voltages, high discharge capacity, high coulombic efficiency, and excellent retention of discharge capacity and coulombic efficiency over several cycles of charging and discharging. In some embodiments, a high voltage electrolyte includes a base electrolyte and a set of additive compounds, which impart these desirable performance characteristics.

Abstract: A technique for bonding an organic group with the surface of fine particles such as nanoparticles through strong linkage is provided, whereas such fine particles are attracting attention as materials essential for development of high-tech products because of various unique excellent characteristics and functions thereof. Organically modified metal oxide fine particles can be obtained by adapting high-temperature, high-pressure water as a reaction field to bond an organic matter with the surface of metal oxide fine particles through strong linkage. The use of the same condition enables not only the formation of metal oxide fine particles but also the organic modification of the formed fine particles. The resulting organically modified metal oxide fine particles exhibit excellent properties, characteristics and functions.

Abstract: This invention relates to organometallic compounds represented by the formula HaM(NR1R2)x(NR3H)y(NH2)z wherein M is a metal or metalloid, each of R1, R2 and R3 is the same or different and is independently a hydrocarbon group or a heteroatom-containing group, a is a value from 0 to 3, x is a value from 0 to 3, y is a value from 0 to 4, z is a value from 0 to 4, and a+x+y+z is equal to the oxidation state of M, provided that at least one of y and z is a value of at least 1, a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.

Abstract: A process is provided for the synthesis of 4,5-diamino cyclohexene carboxylate ester (1): or a pharmaceutically acceptable salt thereof. R1-R3 are a silyl-, an aliphatic, alicyclic, aromatic, arylaliphatic, or an arylalicyclic group. R4, R11 and R12 are H, a silyl-group, an aliphatic, alicyclic, aromatic, arylaliphatic, or an arylalicyclic group. 3,4-Dihydropyran compound (9): with R5 and R6 being suitable protecting groups, is reacted to form aldehyde (4): which is oxidized and converted to N-substituted carbamate (3): with R7 being a suitable protecting group. (3) is, via oxazolinidone (13): converted to azido carboxylate ester (2): and then to 4,5-diamino cyclohexene carboxylate ester (1).

Abstract: Aminosilanes, such as diisopropylaminosilane (DIPAS), are precursors for the deposition of silicon containing films such as silicon-oxide and silicon-nitride films. Described herein are methods to make these aminosilanes as well as intermediate compounds such as haloaminosilane compounds having the following formula: X4-nHn-1SiN(CH(CH3)2)2 wherein n is a number selected from 1, 2 and 3; and X is a halogen selected from Cl, Br, or a mixture of Cl and Br provided that when X is Cl, n is not 1.

Abstract: A nanoimprint-mold release agent including an alkoxysilane compound represented by general formula (1) is provided wherein Rf and Rf? are each independently a fluoroalkyl group of 1 to 10 carbon atoms; R1 is a hydrogen atom or an aliphatic monovalent hydrocarbon group of 1 to 6 carbon atoms; R2 and R3 are each independently methyl group or ethyl group; X and Y are each independently an ether linkage or an ester linkage; a and b are each 0 or 1; m, n, and p are each an integer of 0 to 6; q is an integer of 1 to 6 and r is an integer of 0 to 2.

Abstract: Disclosed are silazane compounds having two fluoroalkyl groups, represented by the following general formula (1): wherein Rf and Rf? are each a fluoroalkyl group, R1 is a hydrogen atoms or an aliphatic monovalent hydrocarbon group, R2 and R3 are each an aliphatic monovalent hydrocarbon group, R4 is a hydrogen atom or an aliphatic monovalent hydrocarbon group, a and b are each 0 or 1, m, n and p are each an integer of 0 to 6, q is an integer of 1 to 6, and r is 1 or 2. By treating an inorganic material with the silazane compound having two fluoroalkyl groups, high water and oil repellency and high sliding properties can be imparted to the inorganic material in good balance.

Abstract: Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.

Abstract: This disclosure provides choline analogs comprising the following structure: where each R1 independently is H or isotopically enriched D, R2 is a protecting group, and N is 14N or isotopically enriched 15N. This disclosure also provides methods of making choline analogs, which include performing a protection step on a betaine aldehyde to form a choline analog, and methods of using choline analogs to form hyperpolarized compounds.

Abstract: A polymer having high catalyst activity, excellent hydrogen response, high stereoregularity and high yield can be obtained by polymerizing olefins in the presence of a catalyst for olefin polymerization comprising (A) a solid catalyst component containing magnesium, titanium, a halogen, and an electron donor compound, (B) an organoaluminum compound shown by the formula R6pAlQ3-p(R1R2N)m, and (C) an aminosilane compound shown by the formula (R3HN)nR4pSi(OR5)q.

Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.

Abstract: An antiglare and antiseptic coating material comprises nanoparticles with a molecule having the formula (I): wherein R1 could be substituted with halogens, hydrogen, alkyl groups, alkoxy groups, hydroxyl group, alkenyl groups, alkynyl groups, acyl groups, aryl groups, carboxyl groups, alkoxycarbonyl groups, or aryloxycarboxyl groups, and wherein R2 could be quaternary ammonium functional groups. The antiglare and antiseptic coating material is spread on an outer cover or a conductive layer of a touchscreen to provide antiglare, antiseptic and fingerprint-proof functions for the coated surfaces.

Abstract: An object is to provide a highly pure aminosilane having a reduced amount of halogen impurity, which is suitable for applications of electronic materials and others. More specifically, provided is a method for preparing a purified aminosilane comprising at least the steps of treating, with an alkyl metal reagent, an aminosilane having a Si—N bond but not a Si-halogen bond and having halogen impurity content of 1 ppm (w/w) or more; and distilling the treated aminosilane.

Abstract: Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I: wherein R1 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and R2 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino, a C6 to C10 aryl, a linear or branched C1 to C6 fluorinated alkyl, and a C4 to C10 cyclic alkyl group.

Abstract: Precursors useful for vapor phase deposition processes, e.g., CVD/ALD, to form metal-containing films on substrates. The precursors include, in one class, a central metal atom M to which is coordinated at least one ligand of formula (I): wherein: R1, R2 and R3 are each independently H or ogano moieties; and G1 is an electron donor arm substituent that increases the coordination of the ligand to the central metal atom M; wherein when G1 is aminoalkyl, the substituents on the amino nitrogen are not alkyl, fluoroalkyl, cycloaliphatic, or aryl, and are not connected to form a ring structure containing carbon, oxygen or nitrogen atoms. Also disclosed are ketoester, malonate and other precursors adapted for forming metal-containing films on substrates, suitable for use in the manufacture of microelectronic device products such as semiconductor devices and flat panel displays.

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

Abstract: Pentakis(dimethylamino) disilane with general formula (1): Si2(NMe2)5Y, where Y is selected from the group comprising H, Cl or an amino group its preparation method and its use to manufacture gate dielectric films or etch-stop dielectric films of SiN or SiON.

Abstract: Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I): (R1R2N)nSiR34-n??(I) wherein substituents R1 and R2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R1 and R2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO2, PO(OR)2, OR, SO, SO2, SO2R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.

Abstract: A catalyst for polymerization of olefins formed from (A) a solid catalyst component containing magnesium, titanium, halogen, and an electron donor compound, (B) an organoaluminum compound shown by the formula, R6pAlQ3-p, and (C) an aminosilane compound shown by the formula, R3nSi(NR4R5)4-n; and a process for producing a catalyst for polymerization of olefins in the presence of the catalyst are provided. A novel aminosilane compound, a catalyst component for polymerization of olefins having a high catalytic activity, capable of producing polymers with high stereoregularity in a high yield, and exhibiting an excellent hydrogen response, a catalyst, and a process for producing olefin polymers using the catalyst are provided.

Abstract: A fibrillar, nanotextured coating is deposited on a substrate by contacting the substrate with a reaction mixture comprising a reagent which is hydrolyzable to produced a cross-linked reaction product, and a first solvent which solvates the reagent and the reaction product. The reagent is hydrolyzed so as to provide a cross-linked reaction product which is bonded to the substrate. The substrate is then contacted with a second solvent which is a non-solvent for the reaction product so as to cause nanoscopic phase separation of the reaction product, resulting in the formation of a fibrillar nanotextured coating which is bonded to the substrate. The thus produced coating may be subjected to further chemical modification. The method may be utilized to produce superhydrophobic coatings. Also disclosed are coatings made by the method of the present invention.

Abstract: A material for chemical vapor deposition containing an organic silicon-containing compound represented by formula: HSiCl(NR1R2)(NR3R4), wherein R1 and R3 each represent C1-C4 alkyl or hydrogen; and R2 and R4 each represent C1-C4 alkyl. The material is particularly suitable as a material for forming a silicon nitride thin film on a substrate by chemical vapor deposition. The use of the material allows for film formation at low temperatures ranging from 300° to 500° C.

Abstract: Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R1, R2, R3, and R4 are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R1, R2, R3, and R4 may be the same or different from one another; X1, X2, X3, and X4 are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazino group, wherein X1, X2, X3, and X4 may be the same or different from one another.

Abstract: In accordance with the present invention, a hydrolyzable silane of low VOC-generating potential is provided which possesses: (i) at least one organofunctional group, said group being a non-bulky electron-withdrawing group and/or a group which interacts with an organic resin, the organofunctional group being bonded to a silicon atom of a hydrolyzable silyl group through a stable bridging groups; and (ii) at least one hydrolyzable group bonded to silicon and containing at least two heteroatoms selected from the group consisting of oxygen, nitrogen and their combinations, hydrolysis of the hydrolyzable group generating a compound having a vapor pressure lower than 0.1 mm Hg at 20° C.

Abstract: An embodiment of the invention is a novel Cr(V) OCO3- trianionic pincer ligand complex. Another embodiment of the invention is a catalytic method for oxidation of a substrate aerobically in the presence of a source of oxygen, where the novel Cr(V) OCO3- trianionic pincer ligand complex acts as the catalyst. The substrate can be a phosphine, amine, sulfide, alkene, alkane or a second metal complex. Another embodiment of the invention is directed to NCN pincer ligands that can form trianionic pincer ligand complexes.

Abstract: Described herein is a degradable linking agent of formula Photo1-LG-Photo2, wherein Photo1 and Photo2 independently represent at least one photoreactive group and LG represents a linking group comprising one or more silicon atoms or one or more phosphorous atoms. The degradable linking agent includes a covalent linkage between at least one photoreactive group and the linking group, wherein the covalent linkage between at least one photoreactive group and the linking group is interrupted by at least one heteroatom. A method for coating a support surface with the degradable linking agent, coated support surfaces and medical devices are also described.

Abstract: Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.

Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.

Abstract: Classes of liquid aminosilanes have been found which allow for the production of silicon-containing films. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.

Abstract: Disclosed are: a method for production of an organic-inorganic complex by intercalation of a positively charged organic compound between layers of a non-swellable layered silicate which is believed to be difficult to achieve under convenient conditions; the organic-inorganic complex; and a layered silicate/polymer nanocomposite using the organic-inorganic complex. The method comprises: step (I) wherein a hydrous layered silicate having a hydroxyl group in its crystalline structure is heat-treated at a temperature not higher than 1,200° C. and lower than the phase transition temperature of the silicate to dehydrate the silicate; and step (II) wherein the dehydrated layered silicate is contacted with an aqueous solution of a positively charged organic compound.

Abstract: A process is provided for the synthesis of 4,5-diamino cyclohexene carboxylate ester (1): or a pharmaceutically acceptable salt thereof. R1-R3 are a silyl-, an aliphatic, alicyclic, aromatic, arylaliphatic, or an arylalicyclic group. R4, R11 and R12 are H, a silyl-group, an aliphatic, alicyclic, aromatic, arylaliphatic, or an arylalicyclic group. 3,4-Dihydropyran compound (9): with R5 and R6 being suitable protecting groups, is reacted to form aldehyde (4): which is oxidized and converted to N-substituted carbamate (3): with R7 being a suitable protecting group. (3) is, via oxazolinidone (13): converted to azido carboxylate ester (2): and then to 4,5-diamino cyclohexene carboxylate ester (1).

Abstract: A method of producing an organosilylamine containing a radiation-polymerizable functional group that is useful as a surface treatment agent is provided. The method includes reacting an organosilylamine containing a haloalkyl group, and at least one salt having a radiation-polymerizable functional group selected from the group consisting of alkali metal salts of organic acids having a radiation-polymerizable functional group and alkaline earth metal salts of organic acids having a radiation-polymerizable functional group, at a temperature within a range from 50 to 150° C. An organosilylamine containing a radiation-polymerizable functional group composed of a specific silazane unit is also provided.

Abstract: There is provided a modifier for lowering relative dielectric constant of a low dielectric constant film used in semiconductor devices, the modifier of the low dielectric constant film being characterized in that it contains as an effective component a silicon compound represented by formula (1) R3-nHnSiN3??(1) (R is a C1-C4 alkyl group, and n is an integer of 0-3).

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

Abstract: The present invention provides a method for preparing an inorganic crystalline ceramic material having an organized structure, comprising the steps of: (a) providing nanoparticles of one or more inorganic crystalline ceramic materials; (b) reacting metal hydroxide groups that are present on the nanoparticles with molecules of a chemical compound which molecules each comprisea first and a second reactive moiety, whereby a covalent bond is formed between the first reactive moieties of the molecules and the respective metal hydroxide groups; and (c) subjecting the nanoparticles obtained in step (b) to a treatment which enables the formation of a bond between at least two nanoparticles, whereby the bond is formed directly or indirectly between the second reactive moieties of the covalenty bonded molecules of the chemical compound as obtained in step (b), thereby forming an organized structure.

Abstract: The present invention relates to a synthetic method for terbinafine and analogues thereof using metal catalysts, preferably Ni(II) salts and/or complexes.

Abstract: The present invention provides an organic-inorganic hybrid chiral sorbent for chiral resolution of various racemic compounds viz. racemic mandelic acid, 2-phenyl propionic acid, diethyl tartrate, 2,2?-dihydroxy-1,1?-binaphthalene (BINOL) and cyano chromene oxide with excellent chiral separation (enantiomeric excess, 99%) in case of mandelic acid under medium pressure column chromatography. These optically pure enantiomers find applications as intermediates in pharmaceutical industries.

Abstract: The present invention relates to novel processes for preparing borylsilylamines, novel amines, novel borosilazane compounds, novel oligoborosilazane or polyborosilazane compounds which have the structural feature Si—N—B, ceramic material and methods of producing and using them.

Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

Abstract: This invention relates to a novel polymerization initiator capable of introducing an active amino proton into a polymerization starting terminal without losing polymerization activity, and a novel modified conjugated diene polymer being excellent in the interaction with a filler and capable of improving a low heat buildup of a rubber composition, and more particularly to a polymerization initiator being a diamine compound in which one amino group is protected with a silylating agent and an active proton of the other amino group is replaced with an alkali metal or an alkaline earth metal, and a modified conjugated diene polymer which can be produced by using such a polymerization initiator and is a homopolymer of a conjugated diene compound or a copolymer of a conjugated diene compound and an aromatic vinyl compound and has a residue derived from a diamine compound at its polymerization starting terminal.