Patent number: 8507704
Abstract: A formulation, comprising: a) at least one metal-ligand complex, wherein one or more ligands are selected from the group consisting of ?-diketonates, ?-ketoiminates, ?-ketoesterates, ?-diiminates, alkyls, carbonyls, alkyl carbonyls, cyclopentadienyls, pyrrolyls, alkoxides, amidinates, imidazolyls, and mixtures thereof; and the metal is selected from Group 2 to 16 elements of the Periodic Table of the Elements; and, b) at least one aminoether selected from the group consisting of R1R2NR3OR4NR5R6, R1OR4NR5R6, O(CH2CH2)2NR1, R1R2NR3N(CH2CH2)2O, R1R2NR3OR4N(CH2CH2)2O, O(CH2CH2)2NR1OR2N(CH2CH2)2O, and mixtures thereof, wherein R1-6 are independently selected from group consisting of C1-10 linear alkyl, C1-10 branched alkyl, C1-10 cyclic alkyl, C6-C10 aromatic, C1-10 alkylamine, C1-10 alkylaminoalkyl, C1-10 ether, C4-C10 cyclic ether, C4-C10 cyclic aminoether, and mixture thereof.
Type:
Grant
Filed:
August 30, 2010
Date of Patent:
August 13, 2013
Assignee:
Air Products and Chemicals, Inc.
Inventors:
Sergei Vladimirovich Ivanov, Xinjian Lei, Daniel P. Spence, John Anthony Thomas Norman, Laura M. Matz
Publication number: 20110300482
Abstract: There is provided a sulfonium salt having high photosensitivity to the i-line. The invention relates to a sulfonium salt represented by formula (1) described below: [in formula (1), R1 to R6 each independently represent an alkyl group, a hydroxy group, an alkoxy group, an alkylcarbonyl group, an arylcarbonyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, an arylthiocarbonyl group, an acyloxy group, an arylthio group, an alkylthio group, an aryl group, a heterocyclic hydrocarbon group, an aryloxy group, an alkylsulfinyl group, an arylsulfinyl group, an alkylsulfonyl group, an arylsulfonyl group, a hydroxy(poly) alkyleneoxy group, an optionally substituted amino group, a cyano group, a nitro group, or a halogen atom, m1 to m6 each represent the number of occurrences of each of R1 to R6, m1, m4, and m6 each represent an integer of 0 to 5, m2, m3, and m5 each represent an integer of 0 to 4, and X? represents a monovalent polyatomic anion].
Type:
Application
Filed:
February 4, 2010
Publication date:
December 8, 2011
Applicant:
SAN-APRO, LTD
Inventors:
Issei Suzuki, Hideki Kimura
Publication number: 20100279011
Abstract: Bismuth precursors having utility for forming highly conformal bismuth-containing films by low temperature (<300° C.) vapor deposition processes such as CVD and ALD, including bismuth aminidates, bismuth guanidates, bismuth isoureates, bismuth carbamates and bismuth thiocarbamates, bismuth beta-diketonates, bismuth diketoiminates, bismuth diketiiminates, bismuth allyls, bismuth cyclopentadienyls, bismuth alkyls, bismuth alkoxides, and bismuth silyls with pendant ligands, bismuth silylamides, bismuth chelated amides, and bismuth ditelluroimidodiphosphinates. Also described are methods of making such precursors, and packaged forms of such precursors suitable for use in the manufacture of microelectronic device products. These bismuth precursors are usefully employed to form bismuth-containing films, such as films of GBT, Bi2Te3, Bi4Ti3O12, SrBi2Ta2O9, Bi—Ta—O, BiP and thermoelectric bismuth-containing films.
Type:
Application
Filed:
October 31, 2008
Publication date:
November 4, 2010
Applicant:
Advanced Technology Materials, Inc.
Inventors:
Tianniu Chen, Chongying Xu, Bryan C. Hendrix, William Hunks, Thomas M. Cameron, Matthias Stender, Gregory T. Stauf, Jeffrey F. Roeder