Arsenic, Antimony, Or Bismuth Containing (as, Sb, Or Bi) Patents (Class 556/64)
  • Patent number: 10326067
    Abstract: Single source precursors, methods to synthesize single source precursors and methods to deposit nanowire based thin films using single source precursors for high efficiency thermoelectric devices are provided herein. In some embodiments, a method of forming a single source precursor includes mixing a first compound with one of SbX3, SbX5, Sb2(SO4)3 or with one of BiX3, Bi(NO3)3, Bi(OTf)3, Bi(PO4), Bi(OAc)3, wherein the first compound is one of a lithium selenolate, a lithium tellurolate, a monoselenide, or a monotelluride.
    Type: Grant
    Filed: September 11, 2015
    Date of Patent: June 18, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ranga Rao Arnepalli, Tapash Chakraborty, Robert Jan Visser
  • Patent number: 9034688
    Abstract: Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: May 19, 2015
    Assignee: ENTEGRIS, INC.
    Inventors: Tianniu Chen, William Hunks, Philip S. H. Chen, Chongying Xu, Leah Maylott
  • Patent number: 8803141
    Abstract: A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: August 12, 2014
    Assignee: International Business Machines Corporation
    Inventors: David B. Mitzi, Matthew W. Copel
  • Publication number: 20140206136
    Abstract: Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
    Type: Application
    Filed: March 18, 2014
    Publication date: July 24, 2014
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Tianniu Chen, William Hunks, Philip S.H. Chen, Chongying Xu, Leah Maylott
  • Patent number: 8674127
    Abstract: Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of A Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
    Type: Grant
    Filed: April 30, 2009
    Date of Patent: March 18, 2014
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Tianniu Chen, William Hunks, Philip S. H. Chen, Chongying Xu, Leah Maylott
  • Publication number: 20140005428
    Abstract: A metal organic framework (MOF) material including a Brunauer-Emmett-Teller (BET) surface area greater than 7,010 m2/g. Also a metal organic framework (MOF) material including hexa-carboxylated linkers including alkyne bond. Also a metal organic framework (MOF) material including three types of cuboctahedron cages fused to provide continuous channels. Also a method of making a metal organic framework (MOF) material including saponifying hexaester precursors having alkyne bonds to form a plurality of hexa-carboxylated linkers including alkyne bonds and performing a solvothermal reaction with the plurality of hexa-carboxylated linkers and one or more metal containing compounds to form the MOF material.
    Type: Application
    Filed: June 18, 2013
    Publication date: January 2, 2014
    Applicant: Northwestern University
    Inventors: Omar K. Farha, Joseph T. Hupp, Christopher E. Wilmer, Ibrahim Eryazici, Randall Q. Snurr, Diego A. Gomez-Gualdron, Bhaskarjyoti Borah
  • Patent number: 8507704
    Abstract: A formulation, comprising: a) at least one metal-ligand complex, wherein one or more ligands are selected from the group consisting of ?-diketonates, ?-ketoiminates, ?-ketoesterates, ?-diiminates, alkyls, carbonyls, alkyl carbonyls, cyclopentadienyls, pyrrolyls, alkoxides, amidinates, imidazolyls, and mixtures thereof; and the metal is selected from Group 2 to 16 elements of the Periodic Table of the Elements; and, b) at least one aminoether selected from the group consisting of R1R2NR3OR4NR5R6, R1OR4NR5R6, O(CH2CH2)2NR1, R1R2NR3N(CH2CH2)2O, R1R2NR3OR4N(CH2CH2)2O, O(CH2CH2)2NR1OR2N(CH2CH2)2O, and mixtures thereof, wherein R1-6 are independently selected from group consisting of C1-10 linear alkyl, C1-10 branched alkyl, C1-10 cyclic alkyl, C6-C10 aromatic, C1-10 alkylamine, C1-10 alkylaminoalkyl, C1-10 ether, C4-C10 cyclic ether, C4-C10 cyclic aminoether, and mixture thereof.
    Type: Grant
    Filed: August 30, 2010
    Date of Patent: August 13, 2013
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Sergei Vladimirovich Ivanov, Xinjian Lei, Daniel P. Spence, John Anthony Thomas Norman, Laura M. Matz
  • Publication number: 20130035498
    Abstract: This invention provides a semiconductor having a functionalized surface that is resistant to oxidation and that includes a plurality of atoms of a Group III element bonded to organic groups. The functionalized surface has less than or equal to about 1 atom of the Group III element bonded to an oxygen atom per every 1,000 atoms of the Group III element bonded to the organic groups, as determined using X-ray photoelectron spectroscopy. This invention also provides a method of functionalizing the surface and includes the step of halogenating at least one of the plurality of atoms of the Group III element to form halogenated Group III element atoms. The method also includes the step of reacting at least one of the halogenated Group III element atoms with a Grignard reagent to form a bond between the at least one Group III element atom and the organic groups.
    Type: Application
    Filed: February 16, 2011
    Publication date: February 7, 2013
    Applicant: The Regents of the University of Michigan
    Inventors: Stephen Maldonado, Jhindan Mukherjee
  • Patent number: 8329929
    Abstract: A metal complex represented by the following formula (1): wherein R1 to R6 each independently represent a hydrogen atom or a substituent; Y1 and Y2 each independently represent any one of the following groups: wherein R? represents a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms; P1 and P2 each represent a group of atoms necessary for forming a heterocyclic ring together with Y1 or Y2 and the two carbon atoms at a position adjacent to Y1 or Y2; P1 and P2 may be linked to each other to form a ring; M represents a transition metal element or typical metal element; m represents 1 or 2; X represents a counter ion or a neutral molecule; n represents the number of X's in the complex, and an integer of 0 or more; and Q1 and Q2 each independently represent an aromatic heterocyclic group.
    Type: Grant
    Filed: March 10, 2008
    Date of Patent: December 11, 2012
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Tadafumi Matsunaga, Nobuyoshi Koshino, Hideyuki Higashimura
  • Patent number: 8318252
    Abstract: The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony precursor is used as a source of antimony for the alloy film. Novel silylantimony compounds are also disclosed.
    Type: Grant
    Filed: January 16, 2009
    Date of Patent: November 27, 2012
    Assignee: Air Products and Chemicals, Inc.
    Inventor: Manchao Xiao
  • Publication number: 20110300482
    Abstract: There is provided a sulfonium salt having high photosensitivity to the i-line. The invention relates to a sulfonium salt represented by formula (1) described below: [in formula (1), R1 to R6 each independently represent an alkyl group, a hydroxy group, an alkoxy group, an alkylcarbonyl group, an arylcarbonyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, an arylthiocarbonyl group, an acyloxy group, an arylthio group, an alkylthio group, an aryl group, a heterocyclic hydrocarbon group, an aryloxy group, an alkylsulfinyl group, an arylsulfinyl group, an alkylsulfonyl group, an arylsulfonyl group, a hydroxy(poly) alkyleneoxy group, an optionally substituted amino group, a cyano group, a nitro group, or a halogen atom, m1 to m6 each represent the number of occurrences of each of R1 to R6, m1, m4, and m6 each represent an integer of 0 to 5, m2, m3, and m5 each represent an integer of 0 to 4, and X? represents a monovalent polyatomic anion].
    Type: Application
    Filed: February 4, 2010
    Publication date: December 8, 2011
    Applicant: SAN-APRO, LTD
    Inventors: Issei Suzuki, Hideki Kimura
  • Patent number: 8053772
    Abstract: A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.
    Type: Grant
    Filed: August 27, 2009
    Date of Patent: November 8, 2011
    Assignee: International Business Machines Corporation
    Inventors: David B. Mitzi, Matthew W. Copel
  • Patent number: 8008414
    Abstract: An organoantimony compound represented by the formula (1), processes for producing polymers with use of the compound, and polymers wherein R1 and R2 are C1-C8 alkyl, aryl, substituted aryl or an aromatic heterocyclic group, R3 and R4 are each a hydrogen atom or C1-C8 alkyl, and R5 is aryl, substituted aryl, an aromatic heterocyclic group, oxycarbonyl or cyano.
    Type: Grant
    Filed: June 23, 2005
    Date of Patent: August 30, 2011
    Assignees: Otsuka Chemical Co., Ltd., Japan Science and Technology Agency
    Inventors: Shigeru Yamago, Biswajit Ray, Takashi Kameshima, Kazuhiro Kawano
  • Publication number: 20110111556
    Abstract: Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of A Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
    Type: Application
    Filed: April 30, 2009
    Publication date: May 12, 2011
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Tianniu Chen, William Hunks, Philip S.H. Chen, Chongying Xu, Leah Maylott
  • Publication number: 20100286424
    Abstract: It is an object of the present invention to provide a beneficial method of detoxifying a harmful compound in order to detoxify the harmful compound containing arsenic etc. effectively. A method of detoxifying a harmful compound according to the present invention is characterized in that a harmful compound containing at least one element selected from the group comprising arsenic, antimony and selenium is detoxified by an exposure to light and/or a heating under the presence of a cobalt complex. In a preferred embodiment of the method of detoxifying a harmful compound according to the present invention, the method is characterized in that the harmful compound is detoxified by an alkylation of arsenic, antimony and selenium.
    Type: Application
    Filed: September 18, 2008
    Publication date: November 11, 2010
    Applicant: NIPPON SHEET GLASS COMPANY, LIMITED
    Inventors: Koichiro Nakamura, Akihiro Hishinuma
  • Publication number: 20100279011
    Abstract: Bismuth precursors having utility for forming highly conformal bismuth-containing films by low temperature (<300° C.) vapor deposition processes such as CVD and ALD, including bismuth aminidates, bismuth guanidates, bismuth isoureates, bismuth carbamates and bismuth thiocarbamates, bismuth beta-diketonates, bismuth diketoiminates, bismuth diketiiminates, bismuth allyls, bismuth cyclopentadienyls, bismuth alkyls, bismuth alkoxides, and bismuth silyls with pendant ligands, bismuth silylamides, bismuth chelated amides, and bismuth ditelluroimidodiphosphinates. Also described are methods of making such precursors, and packaged forms of such precursors suitable for use in the manufacture of microelectronic device products. These bismuth precursors are usefully employed to form bismuth-containing films, such as films of GBT, Bi2Te3, Bi4Ti3O12, SrBi2Ta2O9, Bi—Ta—O, BiP and thermoelectric bismuth-containing films.
    Type: Application
    Filed: October 31, 2008
    Publication date: November 4, 2010
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Tianniu Chen, Chongying Xu, Bryan C. Hendrix, William Hunks, Thomas M. Cameron, Matthias Stender, Gregory T. Stauf, Jeffrey F. Roeder
  • Publication number: 20100140112
    Abstract: A diagnostic kit disclosed herein comprises a nanoparticle-biomaterial complex, an extraction solution, a collection electrode, and a current peak measurement unit. The nanoparticle-biomaterial complex comprises: one or more nanoparticles selected from a metal group consisting of zinc, cadmium, lead, copper, gallium, arsenic, thallium, nickel, manganese and bismuth; one or more biomaterial-binding materials binding to the nanoparticles through a binding-stabilizing agent and binding specifically to the biomaterials to be detected; and a binding-stabilizing agent forming bonds between the nanoparticles and the biomaterial-binding materials. The extraction solution serves to isolate and extract the nanoparticles from the nanoparticle-biomaterial complex. The collection electrode serves to collect the nanoparticles from the extraction solution. The current peak measurement unit serves to measure current peaks corresponding to the nanoparticles collected from the collection electrode.
    Type: Application
    Filed: June 23, 2006
    Publication date: June 10, 2010
    Inventors: Kyoung-Sik Seo, Jeong-Whan Kim
  • Patent number: 7709548
    Abstract: A monosulfonium salt in which very little unreacted raw material remains, which has a purity of at least 96%, and which has one sulfonio group in its molecule is manufactured without a refining step. After (a) an aryl compound, (b) a sulfoxide compound, (c) a dehydrating agent, and (d) a BF4, PF6, AsF6, or SbF6 salt of an alkali metal or an alkaline earth metal are introduced into a reaction system, (e) an inorganic acid is added, so that the aryl compound (a) and the sulfoxide compound (b) are subjected to dehydration condensation.
    Type: Grant
    Filed: December 17, 2007
    Date of Patent: May 4, 2010
    Assignee: San-Apro Limited
    Inventors: Masashi Date, Hideki Kimura, Shinji Yamashita, Jiro Yamamoto
  • Publication number: 20100041907
    Abstract: A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.
    Type: Application
    Filed: August 27, 2009
    Publication date: February 18, 2010
    Applicant: International Business Machines Corporation
    Inventors: David B. Mitzi, Matthew W. Copel
  • Publication number: 20090263621
    Abstract: The present invention relates to an adsorbent using the porous organic-inorganic hybrid material(s) containing iron having a large surface area and a high pore volume, in particular, a water adsorbent. Also, it relates to an adsorbent that can be used in humidifiers, dehumidifiers, coolers/heaters, a refrigerating machine or an air conditioner, etc., which can easily absorb or desorb at 100° C. and below, and has a great adsorption amount per weight of the adsorbent. Also, the present invention relates to a novel preparation method of porous organic-inorganic hybrid material(s), in particular, a preparation method characterized by not using hydrofluoric acid, porous organic-inorganic hybrid material(s) prepared by said preparation method, and a use as an adsorbent thereof.
    Type: Application
    Filed: June 12, 2009
    Publication date: October 22, 2009
    Applicant: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY
    Inventors: Jong-San Chang, Young Kyu Hwang, Sung Hwa Jhung, Do-Young Hong, You-Kyung Seo
  • Patent number: 7572828
    Abstract: The invention provides methods and pharmaceutical compositions for inhibiting viral replication, particularly retroviral replication. The methods comprise administration of stibonic acid or diphenyl compounds that disrupt viral nucleocapsid binding to nucleic acids.
    Type: Grant
    Filed: October 8, 2003
    Date of Patent: August 11, 2009
    Assignee: The United States of America as represented by the Secretary of the Department of Health and Human Services
    Inventors: Robert H. Shoemaker, Michael Currens, Alan Rein, Hang Yuan, legal representative, Robert Fisher, Andrew Stephen, Karen Worthy, Shizuko Sei, Bruce Crise, Louis E. Henderson, Ya-Xiong Feng
  • Patent number: 7557229
    Abstract: Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) N,N?-diisopropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates by the reaction of alternating doses of cobalt(II) bis(N,N?-diisopropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices.
    Type: Grant
    Filed: November 14, 2003
    Date of Patent: July 7, 2009
    Assignee: President and Fellows of Harvard College
    Inventors: Roy G. Gordon, Booyong S. Lim
  • Publication number: 20080254546
    Abstract: A molecular probe comprises two arsenic atoms and at least one cyanine based moiety. A method of producing a molecular probe includes providing a molecule having a first formula, treating the molecule with HgOAc, and subsequently transmetallizing with AsCl3. The As is liganded to ethanedithiol to produce a probe having a second formula. A method of labeling a peptide includes providing a peptide comprising a tag sequence and contacting the peptide with a biarsenical molecular probe. A complex is formed comprising the tag sequence and the molecular probe. A method of studying a peptide includes providing a mixture containing a peptide comprising a peptide tag sequence, adding a biarsenical probe to the mixture, and monitoring the fluorescence of the mixture.
    Type: Application
    Filed: April 12, 2007
    Publication date: October 16, 2008
    Inventors: M. Uljana Mayer-Cumblidge, Haishi Cao
  • Patent number: 7420074
    Abstract: A process to prepare substituted aryl pnictogen derivatives comprising contacting a fluoropolyether or fluoroalkyl primary bromide or iodide, with a pnictogen derivative such as triaryl phosphine, triaryl arsine, or triaryl stibine or triaryl phosphine oxide, triaryl arsine oxide or triaryl stibine oxide, to produce the corresponding fluoropolyether- or fluoroalkyl- substituted aryl phosphine oxide, aryl arsine oxide or aryl stibine oxide; and optionally, contacting the oxide product with a reducing agent to form the corresponding substituted aryl phosphine, arsine or stibine.
    Type: Grant
    Filed: December 22, 2006
    Date of Patent: September 2, 2008
    Assignee: E.I. du Pont de Nemours and Company
    Inventors: Jon L. Howell, Kevin Anthony Hay
  • Patent number: 7399814
    Abstract: A highly active and environment-friendly catalyst for use in a living radical polymerization is provided. A catalyst for use in a living radical polymerization method is provided. The catalyst comprises a central element, which is selected from germanium, tin and antimony, and at least one halogen atom, which is bound to the central element. A monomer having a radical reactive unsaturated bond is subjected to a radical polymerization reaction under the presence of the catalyst, thereby it is possible to obtain a polymer having narrow molecular weight distribution. The present invention has the merits such as low toxicity of the catalyst, a small amount of the catalyst can be used, high solubility of the catalyst, mild reaction conditions, no coloration, no odor (unnecessary post-treatment of molded products). The method of the present invention is more environment-friendly and economical than a conventional living radical polymerization method.
    Type: Grant
    Filed: July 24, 2006
    Date of Patent: July 15, 2008
    Assignee: Kyoto University
    Inventors: Atsushi Goto, Takeshi Fukuda, Yoshinobu Tsujii
  • Patent number: 7396948
    Abstract: A process to prepare substituted aryl pnictogen derivatives comprising contacting a fluoropolyether or fluoroalkyl primary bromide or iodide, with a pnictogen derivative such as triaryl phosphine, triaryl arsine, or triaryl stibine or triaryl phosphine oxide, triaryl arsine oxide or triaryl stibine oxide, to produce the corresponding fluoropolyether- or fluoroalkyl-substituted aryl phosphine oxide, aryl arsine oxide or aryl stibine oxide; and optionally, contacting the oxide product with a reducing agent to form the corresponding substituted aryl phosphine, arsine or stibine.
    Type: Grant
    Filed: December 22, 2006
    Date of Patent: July 8, 2008
    Assignee: E.I. du Pont de Nemours and Company
    Inventors: Jon L. Howell, Kevin Anthony Hay
  • Patent number: 7230121
    Abstract: The present invention relates to sulfonium salts, to methods for their preparation and to radiation curable compositions containing them as photoinitiators.
    Type: Grant
    Filed: July 4, 2002
    Date of Patent: June 12, 2007
    Assignee: Lamberti SpA
    Inventors: Gabriele Norcini, Angelo Casiraghi, Marco Visconti, Giuseppe Li Bassi
  • Patent number: 7179765
    Abstract: The present invention relates to a process for the preparation of hydrogen peroxide from oxygen or oxygen-delivering substances and hydrogen or hydrogen-delivering substances in the presence of at least one catalyst containing a metal-organic framework material, wherein said framework material comprises pores and a metal ion and an at least bidentate organic compound, said bidentate organic compound being coordinately bound to the metal ion. The invention further relates to a novel material consisting of said metal organic framework material wherein the material is brought in contact with at least one additional metal.
    Type: Grant
    Filed: October 26, 2005
    Date of Patent: February 20, 2007
    Assignees: BASF Aktiengesellschaft, The Reagents of the University of Michigan
    Inventors: Ulrich Mueller, Olga Metelkina, Henrik Junicke, Thomas Butz, Omar M. Yaghi
  • Patent number: 7049374
    Abstract: This invention is related to heteroatom containing diamondoids (i.e., “heterodiamondoids”) which are compounds having a diamondoid nucleus in which one or more of the diamondoid nucleus carbons has been substitutionally replaced with a noncarbon atom. These heteroatom substituents impart desirable properties to the diamondoid. In addition, the heterodiamondoids are functionalized affording compounds carrying one or more functional groups covalently pendant therefrom. This invention is further related to polymerizable functionalized heterodiamondoids. In a preferred aspect of this invention the diamondoid nuclei are triamantane and higher diamondoid nuclei. In another preferred aspect, the heteroatoms are selected to give rise to diamondoid materials which can serve as n- and p-type materials in electronic devices can serve as optically active materials.
    Type: Grant
    Filed: July 16, 2003
    Date of Patent: May 23, 2006
    Assignee: Chevron U.S.A. Inc.
    Inventors: Shenggao Liu, Robert M. Carlson, Jeremy E. Dahl
  • Patent number: 6962758
    Abstract: An organic light-emitting device (OLED) in which an iptycene derivative is used as the emissive layer and/or one or more of the charge transport layers, or as a host material for one or more of these layers.
    Type: Grant
    Filed: July 6, 2004
    Date of Patent: November 8, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Jian Ping Chen, Yoshimasa Okamura
  • Patent number: 6949665
    Abstract: The invention provides anti-thiol reagents which inhibit enzyme activity of cell-associated protein disulfide isomerase (PDI) by oxidizing or blocking PDI active site vicinal thiol groups which normally participate in disulfide bond rearrangement of PDI substrates. Inhibition of this PDI function is particularly useful in blocking PDI-mediated entry of HIV or other virions into a host cell, as well as inhibiting lymphocyte traffic through the lymph nodes. The invention further provides an assay for the identification of such PDI inhibitors based on the discovery that inhibitors of the invention also induce shedding of the leucocyte L-selectin adhesion molecule.
    Type: Grant
    Filed: December 5, 2001
    Date of Patent: September 27, 2005
    Assignee: Science & Technology Corporation @ UNM
    Inventors: Snezna Rogelj, Larry A. Sklar, Robert B. Palmer
  • Patent number: 6939969
    Abstract: This invention provides an amido ligand and its synthesis. Use of the amide ligand in a variety of metal complexes, and transition metals in particular, is also provided.
    Type: Grant
    Filed: April 2, 2002
    Date of Patent: September 6, 2005
    Assignee: California Institute of Technology
    Inventors: Jonas C. Peters, Steven D. Brown, Seth B. Harkins
  • Patent number: 6881582
    Abstract: Disclosed is a method of making a bismuth molybdate precursor solution using a metallorganic decomposition (MOD) process consisting of the formation of a precursor sol of hexanoates of Bismuth (Bi) and Molybdenum (Mo). The precursor solution is used to make thin film of Bismuth molybdate by spin coating and spray pyrolysis. The bismuth molybdate films have the useful alpha and gamma phases having high sensitivity to ethanol gas, the detection of the ethanol gas is based upon the change of electrical conductivity of a thick film of the semiconductor oxide sensing element resulting from the ethanol gas in an oxygen-containing atmosphere. When the drying is effected by spray pyrolysis, quite thick films with high adhesion have been produced over different substrates, including quartz. The thin film of the present invention made by spray pyrolysis has a very fast response to ethanol detection eg typically 5 seconds.
    Type: Grant
    Filed: November 8, 2001
    Date of Patent: April 19, 2005
    Assignee: Council of Scientific and Industrial Research
    Inventors: Alok Chandra Ratogi, Kiran Jain, Heremba Prasad Gupta, Vipin Kumar
  • Publication number: 20040229845
    Abstract: The instant invention provides reagents and methods for diagnosis, detection and treatment of cancers (for example, prostate cancers). In particular, the invention provides methods to generate various functionalized PSMA ligands, and their uses in diagnosis, detection, imaging, and treatment of prostate cancers, especially those overexpressing PSMA.
    Type: Application
    Filed: June 16, 2004
    Publication date: November 18, 2004
    Applicant: Beth Israel Deaconess Medical Center
    Inventor: John V. Frangioni
  • Publication number: 20040204483
    Abstract: A novel bismuth compound having excellent vaporization characteristic and/or thermal stability, a process of producing the same and a process of producing a film in the film formation by the CVD process are disclosed. Bismuth compounds each represented by the following formula 1, 5 and 9, processes of producing the same, and processes of producing a film.
    Type: Application
    Filed: April 7, 2004
    Publication date: October 14, 2004
    Applicant: TOSOH CORPORATION
    Inventors: Taishi Furukawa, Noriaki Oshima, Kenichi Sekimoto
  • Publication number: 20040176625
    Abstract: This invention provides novel compounds derived from a marine sponge, Adocia sp., that specifically modulat kinesin activity by targeting the kinesin motor domain and mimicking the activity a microtubule. The compounds act as potent anti-mitogens are useful in a wide variety of in vitro and in vivo applications.
    Type: Application
    Filed: March 3, 2004
    Publication date: September 9, 2004
    Applicant: The Regents of the University of California
    Inventors: Lawrence S.B. Goldstein, David John Faulkner, Roman Sakowicz, Michael S. Berdelis, Christine L. Blackburn, Cordula Hopmann
  • Publication number: 20040138488
    Abstract: A complexing ligand for forming a complex with a cation, the ligand comprising an aromatic component including two or more attachment sites for the cation, an optionally substituted amine, such as an aminoalkylene group, and a hydrocarbon chain of from 1 to 12 carbon atoms in length. The amine component of the ligand is capable of taking on an internal counterion (H+) so that the complex of the target cation and ligand has an overall neutral charge. Such ligands can be used to extract a target cation or cations from an aqueous solution. This has particular application for the separation of aluminium and silicon in aqueous liqors in a Bayer process. The ligand can be a simple compound formed by the Mannich condensation of catechol with formaldehyde and an amine. The ligand may alternatively be a bis-ligand, a polymer or an ion exchange resin. A range of new compounds and intermediates are also described.
    Type: Application
    Filed: February 20, 2004
    Publication date: July 15, 2004
    Inventors: David H. Solomon, Marcus J. Caulfield, Tiziana Russo, Rav Shaw, Duncan J. McAllister
  • Patent number: 6762329
    Abstract: One aspect of the present invention relates to novel reaction conditions that allow the efficient synthesis of diaryl ethers from arenes bearing a leaving group and arenols under relatively mild conditions. Another aspect of the present invention relates to the dramatic effects of acidic activators on Ullmann-type couplings involving electron-poor and/or relatively insoluble substrates.
    Type: Grant
    Filed: April 25, 2002
    Date of Patent: July 13, 2004
    Assignee: Massachusetts Institute of Technology
    Inventors: Jean-Francois Marcoux, Sven Doye, Stephen Buchwald
  • Publication number: 20040097672
    Abstract: The invention concerns a catalyst for olefin polymerisation, of formula (I) wherein: E is an oxygen or sulphur atom; X is a phosphorus, arsenic or antimony atom; M is a nickel, palladium or platinum atom comprising a non-attributed valency; a is 1 or 2; R1, R2, R3, identical or different can be selected among hydrogen, alkyl, cycloalkyl, aryl, alkylaryl, arylalkyl radicals, the hydroxyl radical, the alkoxide radicals (with 1 to 20 carbon atoms), the groups —C(O)OR′—, —SO3Y; and Z represents a hydrocarbon radical comprising 2 to 3 carbon atoms; R represents a hydrocarbon radical of valency a, provided that at least one of the radicals Z or R bears at least an electroattractive substituent.
    Type: Application
    Filed: July 10, 2003
    Publication date: May 20, 2004
    Inventors: Jerome Claverie, Remi Soula, Roger Spitz
  • Publication number: 20040059145
    Abstract: This invention is related to heteroatom containing diamondoids (i.e., “heterodiamondoids”) which are compounds having a diamondoid nucleus in which one or more of the diamondoid nucleus carbons has been substitutionally replaced with a noncarbon atom. These heteroatom substituents impart desirable properties to the diamondoid. In addition, the heterodiamondoids are functionalized affording compounds carrying one or more functional groups covalently pendant therefrom. This invention is further related to polymerizable functionalized heterodiamondoids. In a preferred aspect of this invention the diamondoid nuclei are triamantane and higher diamondoid nuclei. In another preferred aspect, the heteroatoms are selected to give rise to diamondoid materials which can serve as n- and p-type materials in electronic devices can serve as optically active materials.
    Type: Application
    Filed: July 16, 2003
    Publication date: March 25, 2004
    Applicant: CHEVRON USA INC.
    Inventors: Shenggao Liu, Robert M. Carlson, Jeremy E. Dahl
  • Publication number: 20040044208
    Abstract: This invention relates to high purity hydrogen ion buffers and in particular amino-organosulfonic acid zwitterionic compositions having low metal content. The concentration of any single metal in the composition is no greater than about 500 ppb, and ideally is less than about 20 ppb.
    Type: Application
    Filed: August 29, 2002
    Publication date: March 4, 2004
    Applicant: Buffers & Biochemicals Corporation
    Inventors: David Bow, Glenn Thomas Carroll
  • Publication number: 20040033892
    Abstract: The ionic liquids according to the invention result from the reaction of a halogenated or oxyhalogenated Lewis acid based on titanium, niobium, tantalum, tin or antimony with an organic salt of formula X+A− in which A− is a halide anion and X+ a quaternary ammonium, quaternary phosphonium or ternary sulphonium cation.
    Type: Application
    Filed: May 13, 2003
    Publication date: February 19, 2004
    Inventors: Philippe Bonnet, Eric Lacroix, Jean-Pierre Schirmann
  • Publication number: 20040029367
    Abstract: A volatile solid-source novel antimony precursor, Br2SbCH3, that may be utilized in semiconductor processing chambers for depositing antimony on a substrate by deposition methods, e.g., chemical vapor deposition, ion implantation, molecular beam epitaxy, diffusion and rapid thermal processing. The novel antimony compound of the invention is synthesized by combining tribromide antimony with trimethylantimony under heating conditions that form a Br2SbCH3 crystalline product.
    Type: Application
    Filed: August 7, 2002
    Publication date: February 12, 2004
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum, Michael A. Todd, Niamh McMahon
  • Patent number: 6682602
    Abstract: A method of forming a film on a substrate using one or more complexes containing one or more chelating O- and/or N-donor ligands. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
    Type: Grant
    Filed: August 19, 2002
    Date of Patent: January 27, 2004
    Assignee: Micron Technology, Inc.
    Inventor: Brian A. Vaartstra
  • Publication number: 20040010149
    Abstract: One aspect of the present invention relates to novel ligands for transition metals. A second aspect of the present invention relates to the use of catalysts comprising these ligands in transition metal-catalyzed carbon-heteroatom and carbon-carbon bond-forming reactions. The subject methods provide improvements in many features of the transition metal-catalyzed reactions, including the range of suitable substrates, reaction conditions, and efficiency.
    Type: Application
    Filed: April 22, 2003
    Publication date: January 15, 2004
    Inventors: Stephen L. Buchwald, David W. Old, John P. Wolfe, Michael Palucki, Ken Kamikawa
  • Patent number: 6579904
    Abstract: Betaine transition metal complexes are formed by: a) reacting a solution including an alkali metal salt of chloroacetic acid with a solution including the transition metal salt to give a solution including a chloroacetate transition metal complex; and b) reacting the solution including the chloroacetate transition metal complex with trimethylamine to give a solution including the betaine transition metal complex. Such betaine transition metal complexes may be used as a feed supplement for animals in the process of preparing such animals for market.
    Type: Grant
    Filed: September 22, 2000
    Date of Patent: June 17, 2003
    Assignee: K.E.R. Associates, Inc.
    Inventors: Harvey B. Hopps, Gary Culp, Steven B. Malcolm, Ken W. Ridenour, Jay Thurman
  • Publication number: 20030100761
    Abstract: The invention relates to a process for synthesizing an ionic metal complex represented by the general formula (1) or (5). This process includes reacting in an organic solvent a compound (corresponding to ligand of the complex) represented by the general formula (2) or (6) with a halogen-containing compound represented by the general formula (3) or (4), in the presence of a reaction aid containing an element selected from the group consisting of elements of groups 1-4 and 11-14 of the periodic table. It is possible by this process to easily and efficiently synthesize the ionic metal complex, which can be used as a supporting electrolyte for electrochemical devices, a polymerization catalyst of polyolefins and so forth, or a catalyst for organic synthesis.
    Type: Application
    Filed: November 1, 2002
    Publication date: May 29, 2003
    Applicant: Central Glass Company, Limited
    Inventors: Shoichi Tsujioka, Hironari Takase, Mikihiro Takahashi, Yoshimi Isono
  • Publication number: 20030096189
    Abstract: Disclosed are novel onium salts represented by general formula (R) 3S+M, wherein three R's may be the same or different, each being an aryl group, provided that at least one of R's is a t-alkoxy substituted phenyl group, and M is an anion capable of foxing the sulfonium salts; and high energy radiation-responsive positive resist materials using said novel onium salts as acid generator.
    Type: Application
    Filed: March 11, 1997
    Publication date: May 22, 2003
    Inventors: FUJIO YAGIHASHI, TOMOYOSHI FURIHATA, JUN WATANABE, AKINOBU TANAKA, YOSHIO KAWAI, TADAHITO MATSUA
  • Publication number: 20030088128
    Abstract: One aspect of the present invention relates to novel reaction conditions that allow the efficient synthesis of diaryl ethers from arenes bearing a leaving group and arenols under relatively mild conditions. Another aspect of the present invention relates to the dramatic effects of acidic activators on Ullmann-type couplings involving electron-poor and/or relatively insoluble substrates.
    Type: Application
    Filed: April 25, 2002
    Publication date: May 8, 2003
    Inventors: Jean-Francois Marcoux, Sven Doye, Stephen Buchwald
  • Publication number: 20030083373
    Abstract: The present invention features biarsenical molecules. Target sequences that specifically react with the biarsenical molecules are also included. The present invention also features kits that include biarsenical molecules and target sequences. Tetraarsenical molecules are also featured in the invention.
    Type: Application
    Filed: April 19, 2002
    Publication date: May 1, 2003
    Applicant: The Regents of the University of California
    Inventors: Roger Y. Tsien, B. Albert Griffin