Abstract: Techniques for monitoring thermal emissivity levels of human traffic within a plurality of sections of a zone of interest are presented. The thermal emissivity levels are monitored using an infrared detector with sensitivity range of less than fifty milliKelvin, and in some variations, about fifteen to thirty milliKelvin, such as a quantum well infrared photodetector (QWIP) equipped camera. Based on differential emissivity calculations, a determination is made whether the monitored emissivity level corresponds to at least one calibrated emissivity level associated with an explosive material. The monitored emissivity levels are calibrated to eliminate the effects of other synthetic objects such as clothing, personal items, and other harmless objects. The monitored emissivity levels are also buffered against changes in environmental factors.

Abstract: A method and system for solving the inverse acoustic scattering problem using an iterative approach with consideration of half-off-shell transition matrix elements (near-field) information, where the Volterra inverse series correctly predicts the first two moments of the interaction, while the Fredholm inverse series is correct only for the first moment and that the Volterra approach provides a method for exactly obtaining interactions which can be written as a sum of delta functions.

Abstract: Disclosed are methods and apparatus for characterizing defects by using X-ray emission analysis techniques. The X-rays are emitted in response to an impinging beam, such as an electron beam, directed towards the sample surface where a defect resides. It may also be used to help determine where the void(s) are with respect to the interconnect structure. Methods disclosed are for spatially locating defects in or on integrated circuits. Also disclosed are methods for identifying the elemental composition of defects and spatially locating different elemental components of defects.

Abstract: The method measures the temperature, emissivity, and other properties of relatively smooth surfaces radiating thermal energy, and is especially adapted for monitoring semiconductor fabrication processes. Temperature is determined by relating measured radiance to the predictions of the Planck radiation law, using knowledge of the emissivity determined from an analysis of the polarization of the thermally emitted radiance. Additional information regarding the properties of thin films, such as thickness and composition, can be computed from the emissivity or the ratio of the emissivities measured at two independent polarizations. Because the data are obtained from the intrinsic thermal radiance, rather than from an extrinsic light source, the measurement can be performed when it is inconvenient or impossible to provide a light source for reflectance measurements.

Abstract: The present invention provides an electromagnetic tracking system that includes a field generator and a field sensor arranged to generate and detect, respectively, an electromagnetic field. Both the transmitter and receiver coils are connected to signal conditioning and processing circuitry to provide outputs indicative of the coil signals. A processor operates on the signals to determine the coordinates of the sensing assembly relative to the generator assembly. The signal processor produces ratiometric outputs, and applies a mutual inductance model to solve for position/orientation coordinates. In some embodiments, a disturber in the form of a conductive ring or a sheath is disposed about an interfering piece of equipment to moderate and standardize disturbances due to eddy currents.

Abstract: An object of the present invention is to provide a method that allows the heat flux distribution on an object surface to be measured even when the heat flux is an unsteady or short-duration phenomenon, and that does not depend on the material of the object; and to provide a system for measuring the heat flux distribution on an object surface with the aid of this method. In the method for measuring the heat flux on an object surface in accordance with the present invention, the emission intensity of a temperature-sensitive paint that varies with the temperature of the object surface is chronologically captured and sensed as video information at a high frame rate, an image of the temperature distribution on the object surface is obtained based on characteristics between the emission intensity and temperature calibration, and the heat flux in each domain is calculated by the Cook and Feldermann method.

Abstract: The invention concerns a method and device, for remote sensing of objects that emit variable thermal emissions having phases, which may include: A. acquisition of a map of the radiation coming from the surface of the portion of space within or behind the object to be sensed at least at a first time t1 and a second time t2, such times being successive to each other; B. acquisition of a map of the radiation coming from the surface of said portion of space at a third instant t*; C. summation of the maps of at least two times t1 and t2; D. subtraction of the map at time t* from the sum from the sum of phase C as well as other phases.

Abstract: Techniques for determining certain parameters of semiconductor specimens using X-ray spectroscopy are described. The invention can be used to determine parameters such as composition, dimensions, and density of semiconductor specimens. Specifically, an X-ray spectrum simulation algorithm is used to iteratively generate a theoretical X-ray spectrum for a semiconductor specimen having certain parameters. The iterative generation of theoretical X-ray spectrums continues until one of the theoretical X-ray spectrum closely matches the actual X-ray spectrum measured off of the specimen. In an alternative embodiment, this technique of generating theoretical X-ray spectrums can be used in combination with a pre-existing library of X-ray spectral signatures for semiconductor specimens having various parameters.

Abstract: A multi-channel spectrometer and a light source are used to measure both the emitted and the reflected light from a surface which is at an elevated temperature relative to its environment. In a first method, the temperature of the surface and emissivity in each wavelength is calculated from a knowledge of the spectrum and the measurement of the incident and reflected light. In the second method, the reflected light is measured from a reference surface having a known reflectivity and the same geometry as the surface of interest and the emitted and the reflected light are measured for the surface of interest. These measurements permit the computation of the emissivity in each channel of the spectrometer and the temperature of the surface of interest.

Abstract: In a method and an apparatus for thermal analysis, a target region is divided by dividing the geometry of the target object of the thermal analysis into a finite number of finite elements or cells. The thermal analysis on the target region is conducted using the results of the division. A temperature distribution on the target object is obtained from the heat transfer coefficients by a temperature distribution calculating unit. The actual temperatures at specific points are obtained based on temperature distribution obtained by the specific point temperature calculating unit. Differences between the actually obtained temperatures at the specific points and the predetermined target temperatures at the specific points are obtained by a difference calculating/determining unit. If the differences are determined to be out of the prescribed range, the heat transfer coefficients are changed by a heat transfer coefficient updating unit.

Abstract: A radiometric system (10) typically used in semiconductor wafer processing has reduced optical losses, improved wavelength selectivity, improved signal to noise, and improved signal processing to achieve wafer temperature measurements from about 10° C. to 4,000° C. A YAG rod collection optic (12) directly couples specimen radiation (14) to a filter (18) and photo detector (20). The filter determines which radiation wavelengths are measured, and optionally includes a hot/cold mirror surface (22) for reflecting undesired radiation wavelengths back to the specimen. The detector is formed from doped GaAlAs having a peaked response near 900 nm. A signal processor (28) converts the signal into a temperature reading.

Abstract: A method and an apparatus for generating three-dimensional maps of temperature distribution throughout a dielectric object is disclosed. The apparatus uses radiometric sensors to detect radiation from various layers within the object over a range of wavelengths from radio waves through the infrared. The radiation emissions are linked to temperatures through the use of Planck's Radiation Law, and a three-dimensional map of the temperature distribution is generated using Fridgolm intergrals. The device and method has application for early detection of cancer and is non-invasive.

Abstract: An optical sensor for use in measuring constituents of an agricultural product. An optical sensing window passes a stream of the agricultural product, and a radiation source irradiates the stream as it passes through the optical sensing window. A receiver receives radiation transmitted through the stream and converts it into a corresponding electrical signal using a spectrometer. The electrical signal is digitized to produce a series of data points corresponding to particular wavelengths. A processor normalizes the data points using a reference value in order to generate processed data points that can be used to predict a constituent content of the agricultural product.

Abstract: An electronic system includes a device and a controller to the device. The controller is adapted to calculate a temperature estimate of the device and to control access to the device in accordance with the calculated temperature estimate.

Abstract: A radiometric detector (10) has reduced optical losses, improved wavelength selectivity, improved signal to noise, and improved signal processing methods to achieve temperature measurements of an object (16) from about 10° C. to 4,000° C. A YAG rod collection optic (12) directly couples object radiation (14) to a filter (18) and photo detector (20). The filter determines which radiation wavelength range is measured, and optionally includes a hot/cold mirror surface (22) for reflecting undesired radiation wavelengths back to the specimen. In a preferred measurement method, at least two detectors are employed, each detecting a different wavelength range. A dual-wavelength temperature measurement computation is employed that is independent of radiation transmission losses and the emissivity of the object being measured.

Abstract: A method of quantitative non-destructive thermal inspection of an article having at least one internal cavity comprises the steps of inputting physical properties of the article, measuring thermal characteristics of the article, and calculating heat transfer coefficients of the internal cavity.

Abstract: The temperature of a semiconductor wafer (160) is measured while undergoing processing in a plasma (168) environment. At least two pyrometers (162, 164) receive radiation from, respectively, the semiconductor wafer and the plasma in a plasma process chamber. The first pyrometer receives radiation from either the front or rear surface of the wafer, and the second pyrometer receives radiation from the plasma. Both pyrometers may be sensitive to the same radiation wavelength. A controller (170) receives signals from the first and second pyrometers and calculates a corrected wafer emission, which is employed in the Planck Equation to calculate the wafer temperature. Alternatively, both pyrometers are positioned beneath the wafer with the first pyrometer sensitive to a first wavelength where the wafer is substantially opaque to plasma radiation, and the second pyrometer is sensitive to a wavelength where the wafer is substantially transparent to plasma radiation.

Abstract: A method determines ion beam emittance, i.e., the beam current density based on position and angle, in a charged particle transport system. The emittance is determined from variations in the current measured in a slot Faraday or sample cup as a straight-edged mechanism traverses the beam upstream of the sample cup in a direction perpendicular to the orientation of the slot Faraday and the straight-edged mechanism, which also can be the direction in which the emittance is determined. An expression in terms of the beam current density can be determined for the derivative of the sample current with respect to position of the mechanism. Depending on the angular spread of the beam reaching the sample cup, the density can be determined directly from the derivative, or can be determined using a least squares analysis of the derivative over a range of mechanism positions.

Abstract: The present invention is generally directed to a method and a structure for calibrating a scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device. In one illustrative embodiment, the method comprises measuring a critical dimension of at least one production feature formed above a wafer using a scatterometry tool, measuring at least one of a plurality of grating structures formed above the wafer using the scatterometry tool, each of the grating structures having a different critical dimension, and correcting the measured critical dimension of the at least one production feature based upon the measurement of the at least one grating structure.

Abstract: The invention provides a passive two-stage multiwavelength approach for measuring temperature, emissivity and stray-light levels.

Abstract: Thermally analysis of layers and multiple layer structures used in the semiconductor processing arts is disclosed. A modulated calorimetric analysis may be used to determine a thermal signature that characterizes the chemical properties of a sample of material. The signature may include one or more thermal properties such as heat capacities. The signature may be used to compare and infer the suitability of a material for use in an integrated circuit manufacturing process. A thermal signature for a material that is not known to be suitable for manufacturing integrated circuits may be compared with a thermal signature for a standard material that is known to be suitable in order to determine whether the aforementioned material is suitable. Multiple layer structures may also be analyzed, compared, and inferred, and approaches for determining thermal signatures for any individual layer of the multiple layer structure are disclosed.

Abstract: A method and a device determine an operating temperature of a semiconductor component during operation, wherein the semiconductor component has a PROM memory area which can be read from the outside. The device further has a programming device for programming the PROM memory area of the semiconductor component in which the operating temperature is obtained by interpolation in between a first calibration temperature value and a second calibration temperature value in dependence from an actual measurement. The device has a multivibrator for generating a measurement signal which has a measuring circuit and a driver circuit. The frequency of the measurement signal depends on the temperature of the measuring circuit in the semiconductor component. A frequency counter for senses the frequency of the measurement signal in a predefined measuring interval.

Abstract: The invention provides a passive two-stage multiwavelength approach for measuring temperature, emissivity and stray-light levels.

Abstract: A radiometric system (10) typically used in semiconductor wafer processing has reduced optical losses, improved wavelength selectivity, improved signal to noise, and improved signal processing to achieve wafer temperature measurements from about 10° C. to 4,000° C. A YAG rod collection optic (12) directly couples specimen radiation (14) to a filter (18) and photo detector (20). The filter determines which radiation wavelengths are measured, and optionally includes a hot/cold mirror surface (22) for reflecting undesired radiation wavelengths back to the specimen. The detector is formed from doped GaAlAs having a peaked response near 900 nm. A signal processor (28) converts the signal into a temperature reading.

Abstract: A system for regulating heating temperature of a material is provided. The material may be a photoresist, a top or bottom anti-reflective coating, a low K dielectric material, SOG or other spin-on material, for example. The system includes a plurality of lamps and optical fibers, each optical fiber directing radiation to and heating a respective portions of a bakeplate on which the material is to be placed. In one embodiment, the temperature at various locations on the material placed on the bakeplate is determined and the heating rates are controlled in response to those measurements. In another aspect of the invention, the temperature at various portions of the bakeplate is determined and controlled. In this latter aspect, uniform heating of the material is a consequence of uniform bakeplate temperature.

Abstract: A system and method for remotely determining at least one of the temperature of, and the relative concentrations of species making up, a hot fluid, based on the spectral structure of radiation emitted from the fluid. Thermal radiation over a field of view including the hot fluid is collected. At least a portion of the emission spectrum from the collected radiation is resolved. The resolved emission spectrum is resolved into spectra that are characteristic of specific emitting species and emitter temperatures. The temperature of, and the relative concentrations of species making up, the hot fluid, are determined from the relative amounts of at least two resolved spectra.

Abstract: In one embodiment of the present invention, an apparatus for detecting a hot rail car surface comprises: an infrared sensor for acquiring an infrared signal from a rail car surface of a rail car and transducing the infrared signal into an electrical signal; a rank filter for filtering the electrical signal to produce a filtered array; a first peak detector for detecting a maximum filtered value of the filtered array; and a first comparator for comparing the maximum filtered value to a detection threshold to produce a filtered alarm signal.

Abstract: In an arrangement and method for determining a spatial position of an object on a thermal basis, an imaging thermal sensor detects a thermal image of the environment and outputs corresponding signals to a processing unit coupled to the sensor. The processing unit accepts the signals, evaluates the image in view of a thermal marking, and determines the spatial position of the object dependent on the marking. The arrangement and the method can be employed in combination with a robot for orientation and for travel path control of the robot.

Abstract: An electronic thermometer including a probe to be inserted in to a portion of an outer ear to be measured by the thermometer, an infrared quantity detection means for detecting an infrared radiation quantity which is entered through the probe, a temperature computation means for applying the detected infrared radiation quantity in a predetermined computation expression to compute out a temperature such as body temperature, an infrared transmission data reading means for taking data corresponding to an infrared transmission quantity passing through the probe, and a control means for controlling the computation expression according to the taken data corresponding to the infrared transmission quantity.

Abstract: A method for optimally determining sensor positions for an acoustic pyrometry, capable of obtaining a minimum number of sensors satisfying a given error limit and determining positions of the obtained number of sensors for error minimization, in which a predetermined number of sensors are arbitrarily arranged on sides of a rectangular sectional area to be measured and a transfer matrix is calculated with respect to positions of all the sensors, with effective independence values obtained for respective paths of each of the sensors by performing singular value decomposition with respect to the calculated transfer matrix and a total effective independence value of each of the sensors is obtained by summing up the effective independence values obtained for the respective paths, followed by having a smallest one of the obtained total effective independence valves removed from among the sensors and the above steps are repeated until the number of the remaining sensors becomes equal to a target valve.

Abstract: An electronic thermometer including a probe to be inserted in to a portion of an outer ear to be measured by the thermometer, an infrared quantity detection means for detecting an infrared radiation quantity which is entered through the probe, a temperature computation means for applying the detected infrared radiation quantity in a predetermined computation expression to compute out a temperature such as body temperature, an infrared transmission data reading means for taking data corresponding to an infrared transmission quantity passing through the probe, and a control means for controlling the computation expression according to the taken data corresponding to the infrared transmission quantity.

Abstract: A method of quantitative non-destructive thermal inspection of an article having at least one internal cavity comprises the steps of inputting physical properties of the article, measuring thermal characteristics of the article, and calculating heat transfer coefficients of the internal cavity.

Abstract: A semiconductor wafer (160) temperature measurement method takes advantage of the tight control of the surface conditions and temperature of a hot susceptor 162, which tight control provides known and reproducible radiation emissions from the hot susceptor. The known amount of radiation emitted by the hot susceptor is employed as a stable radiation source (166) for making precise reflectance and emission measurements of the semiconductor wafer.

Abstract: The temperature of a semiconductor wafer (160) is measured while undergoing processing in a plasma (168) environment. At least two pyrometers (162, 164) receive radiation from, respectively, the semiconductor wafer and the plasma in a plasma process chamber. The first pyrometer receives radiation from either the front or rear surface of the wafer, and the second pyrometer receives radiation from the plasma. Both pyrometers may be sensitive to the same radiation wavelength. A controller (170) receives signals from the first and second pyrometers and calculates a corrected wafer emission, which is employed in the Planck Equation to calculate the wafer temperature. Alternatively, both pyrometers are positioned beneath the wafer with the first pyrometer sensitive to a first wavelength where the wafer is substantially opaque to plasma radiation, and the second pyrometer is sensitive to a wavelength where the wafer is substantially transparent to plasma radiation.

Abstract: Sub-micron chemical analysis of the surface and sub-surface of a sample material is performed at, above or under atmospheric pressure, or on for a sample material submerged in a substance. A thermal and/or topographic image of the surface of the sample material is obtained. A location for study is selected using the image. The activation device is positioned over the selected location and surface and/or sub-surface products are ablated, desorbed or decomposed from the sample material to a chemical analyzer for analysis.

Abstract: A rain sensor including light emitting means 7 for guiding light into a window glass so as to undergo total internal reflection within the window glass, light receiving means 8 for receiving the light which has undergone total internal reflection within the window glass, and means for detecting the amount of water drops adhered to or present upon the window glass so as to output a driving signal to a wiper driver apparatus 20, a difference signal corresponding to a difference between a preset reference value and an output signal of an amplifier circuit 17 of the light receiving means is fed back to the amplifier 17, and an amplification factor of the amplifier circuit 17 is adjusted so as to maintain the output signal thereof at a constant value irrespective of the operation condition of the wiper, when electrical power is applied to the rain sensor 2.

Abstract: The present invention relates to a combustion temperature sensor, and, more particularly, to a combustion temperature sensor that measures infrared energy emitted at several preselected wavelengths from a flame and/or a flame's hot gas at a turbine inlet location and applies the energy signals to a calculation model to yield temperature.

Abstract: The present invention relates to a combustion temperature sensor, and, more particularly, to a combustion temperature sensor that measures infrared energy emitted at several preselected wavelengths from a flame and/or a flame's hot gas at a turbine inlet location and applies the energy signals to a calculation model to yield temperature.

Abstract: Apparatus and method for determining a real time, non-contact temperature measurement of semiconductor wafers is provided in a computer-based data gathering system. The apparatus includes a moving carrier containing semiconductor wafers and a pyrometer and a reflectometer positioned above the spinning wafer carrier for providing temperature and reflectivity data samples taken from the semiconductor wafers and spinning carrier. The data are then provided to an attached computer. The attached computer receives the reflectivity and temperature data pairs, stores them in a data table and records the frequency of occurrence of each of the reflectivity values in the series of reflectivity and temperature data.

Abstract: An object of the present invention is to provide an automatic compensation sensor that can eliminate an exclusive input terminal for the compensation mode signal. To achieve this object, the present invention comprises a sensor body (1), a signal output terminal (5) for outputting signals from the sensor body (1), and a controller for compensating the output signal from this signal output terminal (5).

Abstract: A microcomputer usable for a long period of time even when disposed in a high dose radiation-exposed environment, and its access speed control method are provided. According to the microcomputer and the method, the total dose of radiation that the microcomputer receives is determined on the basis of detection signals from a radiation detecting element. Based on the determined total dose of radiation, and table data preset by tests and stored into a memory unit, a CPU controls an access speed. Moreover, the CPU, and the memory unit and a circuit interface unit that access the CPU are integrated on a single chip (ASIC) These units on the same chip are deteriorated and changed in the same direction, without fail, on exposure to radiation.

Abstract: A realtime sensitivity correction method for use in an infrared imaging system, which compensates for possible sensitivity variations among a plurality of sensor elements constituting a infrared sensor device. The infrared imaging system comprises: an infrared sensor which accepts infrared rays emanating from a target object through an appropriate optical system, two reference heat sources, a sensitivity correction circuit composed of digital signal processors, RAM, and other components, a sensitivity correction sequence controller, and a video monitor. The system's scanning cycle consists of an effective scanning period and a non-effective scanning period. During a non-effective scanning period, the infrared sensor scans the high-temperature and normal-temperature reference heat sources. By averaging the detected values, high-temperature reference data and normal-temperature reference data are obtained.

Abstract: A screening device (3) for screening exterior light (2) which illuminates a room (1), is controlled such that in the room on the one hand, user comfort with regard to freedom from dazzling and room temperature is optimal and, on the other hand, energy consumption for artificial lighting within the room or for heating and cooling the room is minimized.

Abstract: A method to compensate for lamp spectrum shift, comprises exposing a first detector to a first light from a lamp, thereby generating a first signal indicative of intensity of said first light; exposing a second detector to a wavelength (.lambda.) of a second light from said lamp, thereby generating a second signal indicative of intensity of said wavelength of said second light, after said second light has interacted with a sample; determining a new color temperature (T.sub.1) of said first light using the following equationT.sub.1 =(F.sub.1 /A).sup.1/xwhere A=F.sub.i /(T.sub.i).sup.x,x=a color temperature exponent of said lamp, F.sub.1 =said first signal, F.sub.i =an initial reference signal, and T.sub.i =an initial color temperature corresponding to said initial reference signal; and determining a first compensated signal (I.sub.1) using the following equationI.sub.1 32 S.sub.1 /B.sub.1where ##EQU1## S1=said second signal, h=Planck's constant, c=speed of light in vacuum, and k=Boltzman constant.

Abstract: A tanning system (14) is disclosed which allows a single centrally located control unit (10) to control a number of remote tanning beds. Each tanning bed is provided with a remote unit (12) associated with the tanning bed. Communication occurs between the control unit (10) and the remote unit (12) through a common AC power wiring structure (22) extending therebetween. The system can use CEBus, X10 or another suitable system for communicating through the AC wiring structure. The operator has control of the operating time of each tanning bed while the customer has control of when the tanning operation begins.

Abstract: A method and apparatus for monitoring the condition of a tool or a workpiece includes an electromagnetic energy source for directing electromagnetic energy toward the tool and also receives electromagnetic energy reflected off the tool. A detector is arranged to receive the reflected electromagnetic energy from the electromagnetic energy source and converts the reflected energy into electronic signals. The electronic signals are transmitted from the detector to a control signal generator and then to a signal analyzing device. The signal analyzing device compares the electronic signals received from the control signal generator to reference signals to determine the condition of the tool or workpiece. Then, the control signal generator generates a control signal based on the result of the comparison performed by the signal analyzing device and transmits the control signal to a tool controlling device controlling the operation of the tool.

Abstract: An automatic gain control technique integrates samples of an incoming analog signal a controlled amount of time so that the magnitudes of the samples lie within the desired input window of an analog-to-digital converter or other signal processing device. The values of the samples are then determined from a combination of the output of the signal processing device and their integration time. This is utilized in a system for determining the temperature of a surface of an object, without contacting the surface, by measuring the level of its infra-red radiation emission. A particular application of the system is to measure the temperature of a semiconductor wafer within a processing chamber while forming integrated circuits on it. The measuring system is configured on a single printed circuit board with an extra height metal heat sink structure to which a cooling unit is mounted.

Abstract: A spatial phase sensor having a lens or opening, or the like, through which electromagnetic radiation signals are directed. Mechanism is provided for receiving the electromagnetic radiation signals and for providing an enhanced electrical signal therefrom. The spatial phase of the electromagnetic radiation signals is first determined by analysis of the polarization vectors of the electromagnetic radiation signals and a sensor is provided for converting the electromagnetic radiation signals into electrical signals containing data corresponding to the determined spatial phase of the electromagnetic signals.

Abstract: A method and apparatus for creating and utilizing a database of defective antifuses on a programmable logic device and comparing the list to a catalog of required connections in a design, wherein the process of comparing the two lists will determine whether the device, although flawed, is nonetheless compatible with the design to be implemented, thereby increasing device yield.