Abstract: A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

Abstract: A time-to-voltage converter is configured to generate an output voltage signal and a correlated reference voltage signal. The time-to-voltage converter includes a current source configured to generate a bias current through a current source output node. The time-to-voltage converter includes a first switched-capacitor circuit coupled to the current source output node and configured to generate the output voltage signal based on an input time signal and the bias current during a first interval. The time-to-voltage converter includes a second switched-capacitor circuit coupled to the current source output node and configured to generate the correlated reference voltage signal based on a reference time signal and the bias current during a second interval. The first interval and the second interval are non-overlapping intervals.

Abstract: An imaging device that improves properties for multiplying signal charges. The imaging device includes an accumulation section which accumulates signal charges. A transfer section transfers the signal charges accumulated in the accumulation section. A multiplier section increases the signal charges accumulated in the accumulation section. The transfer section includes a first insulating member arranged on a substrate and a first electrode arranged on the first insulating member. The multiplier section includes a second insulating member arranged on the substrate and a second electrode arranged on the second insulating member. The second insulating member has a thickness which is greater than that of the first insulating member.