Abstract: A read threshold voltage for a memory is adjusted based on a bit error rate based on decoded data for a plurality of read threshold voltages. The read threshold voltage can be adjusted by reading the memory at a current read threshold voltage to obtain a read value; applying a hard decision decoder to the read value; determining if the hard decision decoder converges for the read value to a converged word; storing bits corresponding to the converged word as reference bits and, if the hard decision decoder converges, (i) computing a bit error rate for the current read threshold voltage based on the reference bits; (ii) adjusting the current read reference voltage to a new read threshold voltage; and (iii) reading the memory at the new read threshold voltage to obtain a new read value, until a threshold is satisfied; and once the threshold is satisfied, selecting the read threshold voltage based on the bit error rates.

Abstract: Disclosed is a method of operating a semiconductor memory device including a plurality of pages, including: receiving a program command, an address, and program data; reading page data from a selected page corresponding to the address in response to the program command; determining whether the number of bits of data corresponding to a program state among the page data is greater than a threshold value; and outputting a state fail signal without performing a program operation on the selected page based on a result of the determination.

Abstract: A decoding method, a memory storage device and a memory control circuit unit are provided. The decoding method includes: reading first data from a plurality of first memory cells of a rewritable non-volatile memory module based on a first read voltage level and performing a first decoding operation; estimating a channel status of the rewritable non-volatile memory module and obtaining a second read voltage level according to the channel status if the first decoding operation fails, and the second read voltage level is different from the first read voltage level, and the second read voltage level is different from an optimal read voltage level; and reading second data from the plurality of first memory cells based on the second read voltage level and performing a second decoding operation. Therefore, an encoding efficiency can be improved.

Abstract: A power supply device supplying power to a device via a power line is provided, where the power supply device includes a first voltage generation unit configured to generate and supply a first direct voltage to the power line, a second voltage generation unit configured to generate and supply a second direct voltage lower than the first direct voltage to the power line, a measurement unit configured to measure a voltage of the power line, a control unit configured to control supply of the first direct voltage with the first voltage generation unit after starting supply of the second direct voltage with the second voltage generation unit, and a determination unit configured to determine a state of the power supply device based on the measured voltage and a first threshold value after starting the supply of the second direct voltage.

Abstract: A method of reading multi-bit data stored in a memory cell of a flash memory includes attempting to perform hard decision (HD) decoding on output data from the flash memory, and performing soft decision (SD) decoding on the output data when the HD decoding cannot be performed. The performing of the SD decoding includes: changing a maximum number of iterations according to a threshold voltage distribution of the memory cell; and performing the SD decoding based on the changed maximum number of iterations.

Abstract: A memory device and an operation method thereof are provided, and the operation method of the memory device includes following steps. A programming operation is performed to write an original data into a first memory array in the memory device. The original data in the first memory array is verified, and whether to generate a write signal is determined according to a verification result. An error correction code is generated according to the original data, and the error correction code and a write address are stored temporarily in a buffer circuit of the memory device. When the write signal is generated, the error correction code and the write address in the buffer circuit are written into a second memory array in the memory device.

Abstract: In a method of optimizing a log likelihood ratio (LLR) used to correct errors related to data stored in a nonvolatile memory device, variation of threshold voltage distribution for a plurality of memory cells included in the nonvolatile memory device is monitored, and the LLR for the memory cells is updated based on a monitoring result. Although the characteristics of the memory cells are deteriorated, the LLR is continuously maintained to the optimal value.

Abstract: According to one aspect, a method for adaptive error correction in a memory system includes reading data from a memory array of a non-volatile memory device in the memory system. Error correcting logic checks the data for at least one error condition stored in the memory array. Based on determining that the at least one error condition exists, a write-back indicator is asserted by the error correcting logic to request correction of the at least one error condition. Based on determining that the at least one error condition does not exist, accesses of the memory array continue without asserting the write-back indicator.

Abstract: According to one aspect, a method for adaptive error correction in a memory system includes reading data from a memory array of a non-volatile memory device in the memory system. Error correcting logic checks the data for at least one error condition stored in the memory array. Based on determining that the at least one error condition exists, a write-back indicator is asserted by the error correcting logic to request correction of the at least one error condition. Based on determining that the at least one error condition does not exist, accesses of the memory array continue without asserting the write-back indicator.

Abstract: A method for performing error correction, an associated memory apparatus and an associated controller thereof are provided. The data used in a hard decoding period can be wholly or partially reserved, and the reserved data can be used in a soft decoding period. For example, a read operation is performed at a specific physical address of a flash memory; after an uncorrectable error of the read operation is detected, a re-read operation is performed at the specific physical address of the flash memory to obtain first data and temporarily store the first data into a volatile memory, and a hard decoding operation is performed on the first data; and after decoding failure of the hard decoding operation is detected, a soft decoding operation is performed according to the first data read from the volatile memory to perform error correction corresponding to the specific physical address.

Abstract: According to one embodiment, a magnetic random access memory includes memory cells, a read circuit, (ECC) circuit, an address register, a flag register, a flag check circuit, and a write back circuit. The memory cells each include a magnetoresistive element. The address register stores the address at which the error has been detected by the ECC circuit. The data register stores corrected data in which the error has been corrected by the ECC circuit. The flag register sets an error flag in association with the address at which the error has been detected by the ECC circuit. The flag check circuit checks whether the error flag is set in the flag register. The write back circuit writes back the data to the memory cell designated by the address corresponding to the error flag.

Abstract: Methods and systems are disclosed for imminent read failure detection using high/low read voltage levels. In certain embodiments, data stored within an array of non-volatile memory (NVM) cells is checked using read voltage levels below and above a normal read voltage level. An imminent read failure is then indicated if errors are detected within the same address for both voltage checks. Further, data stored can be checked using read voltage levels that are incrementally decreased below and incrementally increased above a normal read voltage level. An imminent read failure is then indicated if read errors are detected within the same address for both voltage sweeps and if high/low read voltage levels triggering faults differ by less than a predetermined threshold value. An address sequencer, error correction code (ECC) logic, and a bias generator can be used to implement the imminent failure detection.

Abstract: A method for automatically refreshing a non-volatile memory array in the background without memory interruption includes selecting an unrefreshed segment of the memory, reading data from each row in the selected segment during memory dead time and storing the data read from each row in a local temporary storage memory until an entire segment is read out, remapping all memory addresses in the selected segment to the temporary storage memory, isolating column lines in the selected segment from global column lines, erasing the data in the selected segment without disturbing the column lines, rewriting memory data in each row of the selected segment, remapping all memory addresses in the selected segment to the memory, and repeating the process until all segments have been refreshed.

Abstract: An embodiment of a memory device of SRAM type is proposed. The memory device includes a plurality of memory cells each for storing a first logic value represented by a first reference voltage or a second logic value represented by a second reference voltage. Each memory cell includes a bistable latch—having a main terminal, a complementary terminal, a set of main storage transistors for maintaining the main terminal at the reference voltage corresponding to the stored logic value, and a set of complementary storage transistors to maintain the complementary terminal at the reference voltage corresponding to the complement of the stored logic value—a main access transistor and a complementary access transistor for accessing the main terminal and the complementary terminal, respectively.

Abstract: The various implementations described herein include systems, methods and/or devices that may enhance the reliability with which data can be stored in and read from a memory. The method includes obtaining symbol transition information corresponding to symbol read errors identified while reading data from flash memory cells in a flash memory device. The method further includes determining a reading threshold voltage offset, based at least in part on: a plurality of probability values determined from the symbol transition information; a current count of program-erase cycles; and a word line zone value for a word line zone containing the flash memory cells. Additionally, the method includes generating an updated reading threshold voltage in accordance with the reading threshold voltage offset and the current value of the reading threshold voltage.

Abstract: A data storage device may employ a heat assisted magnetic recording data writer separated from a plurality of data bits stored on a media surface of a data storage medium. At least one controller and a prediction circuit that is connected to the heat assisted magnetic recording data writer can be configured to remap the media surface in response to a predicted heat assisted magnetic recording data writer failure.

Abstract: A nonvolatile memory device including a control unit configured to read resistance value information for each of memory cells as initial resistance value information and store it temporarily before a voltage pulse for forming is applied, to set resistance value information as a threshold value serving as a target for completion of the forming, the resistance value information being obtained by multiplying the initial resistance value information by a predetermined coefficient, and to repeat application of the voltage pulse for forming and reading of the resistance value information until a resistance value indicated by the resistance value information on the memory cell becomes lower than a resistance value indicated by the threshold value.

Abstract: A method of testing non-volatile memory arrays. A first test stage including at least a first stage read uses a first step size for setting current for BCC testing and/or voltage for VT testing for reading at least some memory cells. A second test stage including at least one second stage read uses an adjusted step size less in magnitude than the first step size for reading at least some memory cells. Provided no bit pattern match by the second test stage and/or the adjusted step size does not meet a predetermined minimum resolution (PMR), one or more additional test stages including additional array searching are added using a fixed step size less in magnitude than the adjusted step size including at least one read until a final read determines the predetermined bit pattern is matched and a fixed step size for the final read meets the PMR.

Abstract: Systems and methods for low voltage secure digital (SD) interfaces are disclosed. Embodiments of the present disclosure relate to systems and voltage for a lower voltage SD or SD Input/Output (SDIO) interface such as two integrated circuits. In particular, a SD or SDIO interface may be established between two SD compliant devices. While the SD compliant devices may otherwise comply with the SD standard, the voltage levels for signals passed between the SD compliant devices may be below 1.8 volts that the standard mandates. This reduced voltage is possible because the distances involved for interchip communication or the short distances involved for mobile terminal to peripheral connection are short enough that the reduced voltage is sufficient to still provide the desired signal strength at the receiver.

Abstract: A method includes determining a read threshold voltage corresponding to a group of storage elements in a non-volatile memory that includes a three-dimensional (3D) memory of a data storage device. The method also includes determining an error metric corresponding to data read from the group of storage elements using the read threshold voltage. The method includes comparing the read threshold voltage and the error metric to one or more criteria corresponding to a corrupting event.

Abstract: A method and an apparatus for testing a memory are provided, and the method is adapted for an electronic apparatus to test the memory. In the method, a left edge and a right edge of a first waveform of a clock signal for testing the memory are scanned to obtain a maximum width between two cross points of the left edge and the right edge. A central reference voltage of a data signal outputted by the memory is obtained, and a data width between two cross points of the central reference voltage and a left edge and a right edge of a second waveform of the data signal is obtained. Whether a difference between the data width and the maximum width is greater than a threshold is determined; if the difference is greater than the threshold, the memory is determined to be damaged.

Abstract: A method includes determining a read threshold voltage corresponding to a group of storage elements in a non-volatile memory of a data storage device. The method also includes determining an error metric corresponding to data read from the group of storage elements using the read threshold voltage. The method includes comparing the read threshold voltage and the error metric to one or more criteria corresponding to a corrupting event.

Abstract: The present disclosure includes apparatuses and methods for determining an age of data stored in memory. A number of embodiments include determining a sensing voltage that results in a particular error rate being associated with a sense operation performed on a memory using the sensing voltage, determining a difference between the determined sensing voltage and a program verify voltage associated with the memory, and determining an age of data stored in the memory based on the determined difference.

Abstract: The embodiments described herein include a method and device for adjusting trip points within a storage device. The method includes: obtaining one or more configuration parameters; and based on the one or more configuration parameters, determining a trip voltage. The method also includes comparing the trip voltage with an input voltage. The method further includes triggering a power fail condition in accordance with a determination that the input voltage is less than the trip voltage.

Abstract: A method of operating a memory system includes reading data of first memory cells, the first memory cells being connected to a first wordline from among a plurality of wordlines, the plurality of wordlines including one or more dummy wordlines and one or more normal wordlines; determining whether the first wordline is one of the one or more dummy wordlines by determining, based on the read data, a number of the first memory cells having a first threshold voltage state, the one or more dummy wordlines being wordlines the memory cells of which have been programmed with dummy data, the one or more normal wordlines being wordlines that are not dummy wordlines; and performing a repair algorithm for correcting an error in the read data, selectively according to a result of the determination.

Abstract: Data which is read back from a multi-level storage device is received. For each bin in a set of bins, a portion of reads which fall into that particular bin and which are to be maintained is received. The set of bins is adjusted so that the read-back data, after assignment using the adjusted set of bins, matches the received portions of reads which are to be maintained.

Abstract: A controller for a memory device has a power control section to control power to a memory element in an operation mode and in a retention mode. A monitoring section receives and monitors error information and a storage section stores a retention parameter. In the operation mode, the power control section causes an operation voltage to be applied to the memory element, and in the retention mode, the power control section causes a time-varying voltage to be applied to the memory. The power control section also causes the voltage across the memory element to change in the retention mode between a first retention voltage and a second retention voltage based on the retention parameter.

Abstract: A virtual capacity acquisition unit acquires a size of virtual capacity of a save data area from an application. A storage capacity acquisition unit acquires a size of save data of the application. A writing control unit prohibits the application from writing the save data exceeding the virtual capacity in a recording device. A free space acquisition unit acquires a size of free space of the recoding device, and the writing control unit prohibits the writing of save data whose size is larger than that of the free space.

Abstract: A testing method for non-volatile memory includes writing a first set of data to a set of addresses in a non-volatile memory, reading a second set of data from the set of addresses, and writing the first set of data to the set of addresses again if the first set of data and the second set of data are not identical and number of times for writing the first set of data to the set of addresses is smaller than a predetermined number.

Abstract: An approach to determine a power-on-hour offset for a memory device that is newly-installed into a computer system is provided, which subtracts a current power-on-hour count of the memory device from a current power-on-hour value of a power supply that supplies operative power to the memory device within the computer system. In response to the computer system powering down, an accumulated power-on-hour for the memory device is determined by subtracting the power-on-hour offset of the memory from a current power-on-hour value of the computer system power supply. The determined power-on-hour offset and accumulated power-on-hour values are saved into one or more designated bytes of a free area of electrically erasable programmable read-only memory of the memory device that are available for data storage by a memory controller, and wherein data stored therein persists after operative power is lost to the memory device, the memory controller or the computer system.

Abstract: A method for data storage includes storing data, which is encoded with an Error Correction Code (ECC), in a group of analog memory cells by writing respective first storage values to the memory cells in the group. After storing the data, respective second storage values are read from the memory cells in the group, and the read second storage values are processed so as to decode the ECC. Responsively to a failure in decoding the ECC, one or more of the second storage values that potentially caused the failure are identified as suspect storage values. Respective third storage values are re-read from a subset of the memory cells that includes the memory cells holding the suspect storage values. The ECC is re-decoded using the third storage values so as to reconstruct the stored data.

Abstract: Potential errors that might result from operating logic and/or memory circuits at an insufficient operating voltage are identified by electrically altering nodes of replica or operational circuits so that the electrically altered nodes are susceptible to errors. The electrically altered nodes in an embodiment are controlled using parametric drivers. A minimized operating voltage can be selected by operating at a marginal operating voltage and detecting a voltage threshold at which errors in the electrically altered nodes are detected, for example.

Abstract: When a bad block is found in a nonvolatile memory array, the block is marked as a bad block so that it is not subsequently used. The block is also reconfigured as a bad block by increasing resistance of vertical NAND strings in the block by increasing threshold voltage of at least some transistors along vertical NAND strings, for example, select transistors or memory cell transistors.

Abstract: Memory devices and/or methods of managing memory data errors are provided. A memory device detects and corrects an error bit of data read from a plurality of memory cells, and identifies a memory cell storing the detected error bit. The memory device assigns a verification voltage to each of the plurality of first memory cells, the assigned verification voltage corresponding to the corrected bit for the identified memory cell, the assigned verification voltage corresponding to the read data for the remaining memory cells. The memory device readjusts the data stored in the plurality of memory cells using the assigned verification voltage. Through this, it is possible to increase a retention period of the data of the memory device.

Abstract: A method of screening complementary metal-oxide-semiconductor CMOS integrated circuits, such as integrated circuits including CMOS static random access memory (SRAM) cells, for n-channel transistors susceptible to transistor characteristic shifts over operating time. For the example of SRAM cells formed of cross-coupled CMOS inverters, static noise margin and writeability (Vtrip) screens are provided. Each of the n-channel transistors in the CMOS SRAM cells are formed within p-wells that are isolated from p-type semiconductor material in peripheral circuitry of the memory and other functions in the integrated circuit. Forward and reverse body node bias voltages are applied to the isolated p-wells of the SRAM cells under test to determine whether such operations as read disturb, or write cycles, disrupt the cells under such bias. Cells that are vulnerable to threshold voltage shift over time can thus be identified.

Abstract: In general, each parallel test operation on Static Random Access Memory (SRAM) cells is a test operation performed on a block of the SRAM cells in parallel, or simultaneously. In one embodiment, the SRAM cells are arranged into multiple rows and multiple columns where the columns are further arranged into one or more column groups. The block of the SRAM cells for each parallel test operation includes SRAM cells in two or more of the rows, SRAM cells in two or more columns in the same column group, or both SRAM cells in two or more rows and SRAM cells in two or more columns in the same column group.

Abstract: When a bad block is found in a nonvolatile memory array, the block is marked as a bad block so that it is not subsequently used. The block is also reconfigured as a bad block by increasing resistance of vertical NAND strings in the block by increasing threshold voltage of at least some transistors along vertical NAND strings, for example, select transistors or memory cell transistors.

Abstract: A data storage device including a flash memory, a temperature sensor and a controller. The flash memory has a plurality of blocks, and each of the blocks has a plurality of pages. The temperature sensor detects surrounding ambient temperature and to produce a temperature parameter accordingly. The controller is arranged to perform a first maintenance procedure after a predetermined period since the data storage device is powered on. The controller reads the temperature sensor to obtain a first temperature parameter in the first maintenance procedure and determines a first time span according to a first predetermined condition for performing a second maintenance procedure, wherein the first predetermined condition includes the first temperature parameter, and the controller is further arranged to perform the second maintenance procedure after the first time span since the first maintenance procedure has finished.

Abstract: Disclosed in a method of optimizing a voltage reference signal. The method includes: assigning a first value to the voltage reference signal; executing a test pattern while using the voltage reference signal having the first value; observing whether a failure occurs in response to the executing and thereafter recording a pass/fail result; incrementing the voltage reference signal by a second value; repeating the executing, the observing, and the incrementing a plurality of times until the voltage reference signal exceeds a third value; and determining an optimized value for the voltage reference signal based on the pass/fail results obtained through the repeating the executing, the observing, and the incrementing the plurality of times.

Abstract: Described embodiments provide a media controller that performs error correction on data read from a solid-state media. The media controller receives a read operation from a host device to read one or more given read units of the solid-state media. The media controller reads the data for the corresponding read units from the solid-state media employing initial values for one or more read threshold voltages. Only if a disparity between an actual number of bits at a given logic level included in the read data and an expected number of bits at the given logic level included in the read data has not reached a predetermined threshold, the media controller decodes the read data and provides the decoded data to the host device.

Abstract: A method of testing non-volatile memory arrays. A first test stage including at least a first stage read uses a first step size for setting current for BCC testing and/or voltage for VT testing for reading at least some memory cells. A second test stage including at least one second stage read uses an adjusted step size less in magnitude than the first step size for reading at least some memory cells. Provided no bit pattern match by the second test stage and/or the adjusted step size does not meet a predetermined minimum resolution (PMR), one or more additional test stages including additional array searching are added using a fixed step size less in magnitude than the adjusted step size including at least one read until a final read determines the predetermined bit pattern is matched and a fixed step size for the final read meets the PMR.

Abstract: A signal processing circuit includes a plurality of processing-circuit modules and a logic control circuit. The plurality of processing-circuit modules is configured to process an electrical signal. The plurality of processing-circuit modules has at least one processing parameter that is adaptively adjusted based on the electrical signal. The logic control circuit is configured to receive signals from the plurality of processing-circuit modules, validate the processing based on the received signals, and control a storage circuit to sample and store a value of the processing parameter when the processing is validated. Further, the logic control circuit is configured to control the storage circuit to maintain the value of processing parameter when the processing fails validation, and to control the storage circuit to recover the processing parameter in the plurality of processing-circuit modules to the stored value when the plurality of processing-circuit modules is disturbed by a defect.

Abstract: Apparatuses, systems, and methods are disclosed to manage non-volatile media. A method includes determining a configuration parameter for a set of storage cells of a non-volatile recording medium. A method includes reading data from a set of storage cells using a determined configuration parameter. A method includes adjusting a configuration parameter based on read data.

Abstract: A read voltage setting method for a rewritable non-volatile memory module is provided. The method includes: reading test data stored in memory cells of a word line to obtain a corresponding critical voltage distribution and identifying a default read voltage corresponding to the word line based on the corresponding critical voltage distribution; applying a plurality of test read voltages obtained according to the default read voltage to the word line to read a plurality of test page data; and determining an optimized read voltage corresponding to the word line according to the minimum error bit number among a plurality of error bit numbers of the test page data. The method further includes calculating a difference value between the default read voltage and the optimized read voltage as a read voltage adjustment value corresponding to the word line and recording the read voltage adjustment value in a retry table.

Abstract: A semiconductor memory device and a method of operating the same are provided. The method of operating the semiconductor memory device includes detecting a first group of changed bits between first and second page data, by comparing the first and second page data, which are read out using first and second test voltages from the memory cells, respectively, detecting a second group of changed bits between the second page data and a third page data, by comparing the second page data with the third page data read out from the memory cells using a third test voltage, comparing the numbers of the first and second groups of changed bits, and determining one of the first to third test voltages as a read voltage according to the comparing of the numbers of the first and second groups of changed bits.

Abstract: An apparatus may include a processor circuit a processor circuit to retrieve data from a non-volatile memory, and a multistrobe read module operable on the processor circuit to set a read operation to read a memory cell over a multiplicity of sense operations, where each sense operation is performed under a different sense condition. The multistrobe read module may be further operable to schedule a new sense operation to succeed a prior sense operation of the multiplicity of sense operations without recharge of the wordline when a value of one or more read condition is within a preset range. Other embodiments are disclosed and claimed.

Abstract: Embodiments of a system and method for testing an integrated circuit device are described herein. Testing is complemented by a determination of characteristics of a data valid window that identifies components of a response data signal from a device under test where the data signal can always be expected to be stable.

Abstract: Apparatus, systems, and methods to reduce power delivery noise for partial writes are described. In one embodiment, an apparatus comprises a processor and a memory control logic to insert one or more dummy unit intervals into data in a write operation when a number of state transitions between adjacent unit intervals exceeds a threshold. Other embodiments are also disclosed and claimed.

Abstract: The reliability with which data can be read from a storage medium, such as flash memory storage medium, is enhanced by updating an upper limit of a reading threshold voltage window for a respective portion of the storage medium. For each memory cell in the respective portion of the storage medium, a memory controller is configured to perform a plurality of sensing operations and obtain results from the plurality of sensing operations, where the plurality of sensing operations includes sensing operations using a predefined range of offsets from a previously established reading threshold voltage. The memory controller is further configured to determine the updated upper limit of the reading threshold voltage window based on the-results from the plurality of sensing operations, and store the updated upper limit of the reading threshold voltage window for the respective portion of the storage medium.

Abstract: Subject matter disclosed herein relates to a memory device, and more particularly to read or write performance of a phase change memory.