Abstract: A synchronous reset signal is generated from an asynchronous reset signal. The synchronous reset signal is output from the final-stage FF among L FFs connected in a cascade arrangement. A first error determination signal is output from the final-stage FF among M FFs connected in a cascade arrangement. Among N FFs connected in a cascade arrangement, the initial-stage FF receives the first error determination signal, and the final-stage FF outputs a second error determination signal. Based on the three outputs, the presence or absence of a fault in the circuit is determined. L, M, and N fulfil M?2, L?M+1, and M+N?L+1.

Abstract: A memory address generator for generating an address of a location in a memory includes a first address input for receiving a first address having a location in the memory being accessed during a first memory access cycle, and a next address output configured to output a next address comprising a location in the memory to be accessed during a subsequent memory access cycle based on the current address and a memory address increment value The address increment unit includes a counter arrangement and a selector arrangement, wherein each counter of the counter arrangement is configured to provide an output signal at the output indicative of a maximum value being reached and the selector arrangement is configured to provide a candidate memory address increment value based on the output of the counter arrangement as the memory address increment value output by the address increment unit.

Abstract: A memory device includes a first comparison circuit suitable for comparing read data read from a plurality of memory cells with write data written in the memory cells and outputting a comparison result, a path selection circuit suitable for transferring selected data selected among the read data and test data as read path data based on the comparison result of the first comparison circuit, and an output data alignment circuit suitable for converting the read path data into serial data to output the serial data as output data.

Abstract: An electronic device configured to perform polar coding is described. The electronic device includes a bit pattern generator (3403) configured to successively perform a bit pattern generation process over a series (t=?n/w?) of clock cycles; and a counter (c, 4203), operably coupled to the bit pattern generator (3403) and configured to count a number of successive bit pattern generation sub-processes over the series (t=?n/w?) of clock cycles. The bit pattern generator (3403) is configured to: provide a successive sub-set of (w) bits from a bit pattern vector (bk,n) in each successive t=?n/w? clock cycle; where the bit pattern vector comprises n bits, of which ‘k’ bits adopt a first binary value and n?k bits adopt a complementary binary value.

Abstract: Disclosed is a frequent pattern mining method and apparatus, the frequent pattern mining apparatus that may copy relative memory addresses of candidate itemsets, from a main memory to device memories of graphic processing units (GPUs), copy at least one same block required for calculating supports of the candidate itemsets, from the main memory to the device memories, and update the supports of the candidate itemsets by synchronizing partial supports processed by the GPUs.

Abstract: A method receives start commands for starting end-to-end testing of a live multi-tenant system that hosts shared services for multiple tenants; executes multiple test scripts for generating controller commands in response to the start commands, the executing the test scripts generating respectively synthetic transaction inputs; provides the synthetic transaction inputs to the live multi-tenant system, the live multi-tenant system configured to use the synthetic transaction inputs to perform respectively multiple synthetic transactions involving multiple destinations in the live multi-tenant system, the live multi-tenant system configured to generate respectively multiple test results in response to the multiple synthetic transactions; receives and evaluates the test results generated by the live multi-tenant system to test end-to-end performance conditions of the multi-tenant system; and generates one or more alerts upon recognizing an alert trigger condition based upon the evaluating of the test results.

Abstract: An apparatus and method of using a cache to improve a learn rate for a content-addressable memory (“CAM”) are disclosed. A network device such as a router or a switch, in one embodiment, includes a key generator, a searching circuit, and a key cache, wherein the key generator is capable of generating a first lookup key in response to a first packet. The searching circuit is configured to search the content of the CAM to match the first lookup key. If the first lookup key is not found in the CAM, the key cache stores the first lookup key in response to a first miss.

Abstract: Embodiments relate to pre-silicon device testing using a persistent command table. An aspect includes receiving a value for a persistent command parameter from a user. Another aspect includes determining whether the value of the persistent command parameter is greater than zero. Another aspect includes based on determining whether the value of the persistent command parameter is greater than zero, selecting a number of commands equal to the value of the persistent command parameter from a regular command table of a driver of a device under test. Another aspect includes adding the selected commands to the persistent command table of the driver. Another aspect includes performing testing of the device under test via the driver using only commands that are in the persistent command table of the driver.

Abstract: Disclosed is an error generating apparatus of a solid state drive tester. The error processing operation of the storage is tested by inserting errors into a specific instruction to be transmitted to the storage, and detecting the results of the error processing operation of the storage when testing the storage. The error generating apparatus includes a host terminal for receiving a test condition for a test of a storage from a user, and a test control unit for generating a test pattern according to the test condition or generating a test pattern randomly, generating error data used to test an error characteristic of the storage, and testing the storage based on the test pattern and a normal instruction or an error instruction which is formed by inserting the error data into the normal instruction.

Abstract: Roughly described, a scan-based test architecture is optimized in dependence upon the circuit design under consideration. In one embodiment, a plurality of candidate test designs are developed. For each, a plurality of test vectors are generated in dependence upon the circuit design and the candidate test design, preferably using the same ATPG algorithm that will be used downstream to generate the final test vectors for the production integrated circuit device. A test protocol quality measure such as fault coverage is determined for each of the candidate test designs, and one of the candidate test designs is selected for implementation in an integrated circuit device in dependence upon a comparison of such test protocol quality measures. Preferably, only a sampling of the full set of test vectors that ATPG could generate, is used to determine the number of potential faults that would be found by each particular candidate test design.

Abstract: Disclosed is a system and method for verifying a chip having a memory. Remanufacturers of imaging devices, such as inkjet printers or electrostatic printers, often have to use a replacement chip in order to reuse an imaging cartridge. It is desirable to have a system and method for determining if the replacement chip is suitable for use with a specific imaging cartridge. Also, it may be desirable to confirm that the chip was manufactured by a specific manufacturer. The disclosed system and method allow the remanufacturer a reliable and efficient way to verify chips.

Abstract: A user may make a digital item available to other users of a computer network, such as an instant messaging system, a chat environment, or a subscription-based computer network. Examples of digital items that may be shared with other users include digital representations of graphic images, photographs, audio segments, songs, video segments, movies, and text (such as lists of favorites (e.g., a list of favorite books, a list of favorite movies, and a list of favorite places to visit)). On-line presence information is provided to indicate the on-line presence of users with whom a digital item has been shared, may be shared or is being shared. For instance, an indication of the on-line or offline status of a user with whom an item has been shared or is being shared may be presented.

Abstract: Roughly described, a scan-based test architecture is optimized in dependence upon the circuit design under consideration. In one embodiment, a plurality of candidate test designs are developed. For each, a plurality of test vectors are generated in dependence upon the circuit design and the candidate test design, preferably using the same ATPG algorithm that will be used downstream to generate the final test vectors for the production integrated circuit device. A test protocol quality measure such as fault coverage is determined for each of the candidate test designs, and one of the candidate test designs is selected for implementation in an integrated circuit device in dependence upon a comparison of such test protocol quality measures. Preferably, only a sampling of the full set of test vectors that ATPG could generate, is used to determine the number of potential faults that would be found by each particular candidate test design.

Abstract: According to an embodiment of the disclosure, a method verifies bitmap information or test data information for a semiconductor device. The method places a defect on a semiconductor device at an actual defect location using a laser to physically damage the semiconductor device. A logical address associated with the defect is detected and bitmap information or test data information is reviewed to determine an expected location corresponding to the logical address. Then, the accuracy of the bitmap information or the test data information is determined by comparing the actual defect location with the expected location. A deviation between the two indicates an inaccuracy.

Abstract: An address generation apparatus for quadratic permutation polynomial (QPP) interleaver receives several configurable parameters and uses a plurality of QPP units to compute and outputs a plurality of interleaving addresses according to a QPP function ?(i)=(f1i+f2i2) mod k, where f1 and f2 are QPP coefficients, k is information block length of an input sequence, 0?i?k?1, and mod is a modulus operation. Each of the plurality of QPP units is a parallel computation unit, and outputs in parallel a corresponding group of interleaver addresses, where ?(i) is also a ith interleaving address generated by the apparatus.

Abstract: A device and a method detect an acceleration of a logic signal expressed by a closeness, beyond a closeness threshold, of at least two variation edges of the logic signal. A first control bit and a second control bit are provided. At each edge of the logic signal, the value of the first control bit is inverted after a first delay and the value of the second control bit is inverted after a second delay. An acceleration is detected when the two control bits have at the same time their respective initial values or their respective inverted initial values. Application is in particular but not exclusively to the detection of error injections in a secured integrated circuit.

Abstract: A test apparatus includes: test modules that communicate with the device under test to test the device under test; additional modules connected between the device under test and the test modules, each additional module performing a communication with the device under test, the communication being at least one of a communication performed at a higher speed and a communication performed with a lower latency, in comparison with a communication performed by the test modules; a test head having a plurality of connectors that connect the test modules and the additional modules, respectively, the test modules and the additional modules are mounted on the test head; a performance board placed on the test head that connects between at least a part of terminals of the plurality of connectors and the device under test. The test modules are connected to the additional modules without through the performance board.

Abstract: An address generation apparatus for a quadratic permutation polynomial (QPP) interleaver is provided. It comprises a basic recursive unit, and L recursive units represented by first recursive unit up to Lth recursive units. The apparatus inputs a plurality of configurable parameters according to a QPP function ?(i)=(f1i+f2i2) mod k, generates a plurality of interleaver addresses in serial via the basic recursive unit, and generates L groups of corresponding interleaver addresses via the first up to the Lth recursive units, wherein ?(i) is the i-th interleaver address generated by the apparatus, f1 and f2 are QPP coefficients, and k is information block length of an input sequence, 0?i?k?1.

Abstract: A semiconductor test apparatus sorts addresses corresponding to memory cells in memory provided in a device under test, as well as failure data obtained as a result of testing the memory cells, and stores the sorted addresses and failure data in acquisition memory using burst access. The semiconductor test apparatus is provided with: an address generator configured to generate a burst target signal, which indicates that the addresses and failure data are target data for burst access; and a sort circuit configured to sort the addresses and failure data in order of continuous addresses suitable for burst access, on the basis of the burst target signal.

Abstract: A system includes a virtualized I/O device coupled to one or more processing units. The virtualized I/O device includes a storage for storing a resource discovery table, and programmed I/O (PIO) configuration registers corresponding to hardware resources. A system processor may allocate the plurality of hardware resources to one or more functions, and to populate each entry of the resource discovery table for each function. The processing units may execute one or more processes. Given processing units may further execute OS instructions to allocate space for an I/O mapping of a PIO configuration space in a system memory, and to assign a function to a respective process. Processing units may execute a device driver instance associated with a given process to discover allocated resources by requesting access to the resource discovery table. The virtualized I/O device protects the resources by checking access requests against the resource discovery table.

Abstract: An apparatus may include an interconnect; at least one processor coupled to the interconnect; and at least one memory controller coupled to the interconnect. The memory controller may be programmable by the processor into a loopback test mode of operation and, in the loopback test mode, the memory controller may be configured to receive a first write operation from the processor over the interconnect. The memory controller may be configured to route write data from the first write operation through a plurality of drivers and receivers connected to a plurality of data pins that are capable of connection to one or more memory modules. The memory controller may be further configured to return the write data as read data on the interconnect for a first read operation received from the processor on the interconnect.

Abstract: A burst address generator includes a burst bit counter for receiving at least one burst bit, and increasing or decreasing the at least one burst bit, a burst bit splitter for receiving the increased or decreased at least one burst bit from the burst bit counter, and dividing the increased or decreased at least one burst bit into an X burst bit and a Y burst bit, and a selector for receiving an X address, a Y address, the X burst bit, and the Y burst bit, and generating an X burst address based on the X address and the X burst bit and a Y burst address based on the Y address and the Y burst bit.

Abstract: In one embodiment, an apparatus comprises an interconnect; at least one processor coupled to the interconnect; and at least one memory controller coupled to the interconnect. The memory controller is programmable by the processor into a loopback test mode of operation and, in the loopback test mode, the memory controller is configured to receive a first write operation from the processor over the interconnect. The memory controller is configured to route write data from the first write operation through a plurality of drivers and receivers connected to a plurality of data pins that are capable of connection to one or more memory modules. The memory controller is further configured to return the write data as read data on the interconnect for a first read operation received from the processor on the interconnect.

Abstract: An integrated test device reduces external wiring congestion to a memory. The integrated test device provides for separate decoder testing and debugging to find specific errors in the memory. The device also helps in reducing the complexity of the test of external BIST. Furthermore, the number of clock cycles required for the decoder testing for an N-address memory is reduced from 4N cycles to N clock cycles. Additionally, the access time for the memory is reduced as the test device is used as a pipelining device in normal operation mode.

Abstract: A semiconductor memory test device and method thereof are provided. The example semiconductor memory test device may include a fail memory configured to store at least one test result of a memory under test, a mode selecting unit configured to output a selection signal for selecting a memory address protocol of the fail memory based upon which one of a plurality of test modes is active in the memory under test and an address arranging unit configured to arrange address signals to conform with the selected memory address protocol in response to the selection signal received from the mode selecting unit.

Abstract: In one embodiment, an apparatus comprises an interconnect; at least one processor coupled to the interconnect; and at least one memory controller coupled to the interconnect. The memory controller is programmable by the processor into a loopback test mode of operation and, in the loopback test mode, the memory controller is configured to receive a first write operation from the processor over the interconnect. The memory controller is configured to route write data from the first write operation through a plurality of drivers and receivers connected to a plurality of data pins that are capable of connection to one or more memory modules. The memory controller is further configured to return the write data as read data on the interconnect for a first read operation received from the processor on the interconnect.

Abstract: A semiconductor integrated circuit has a memory circuit having memory cells, a first register, a second register, a register selection circuit having an input to which an output of the first register and an output of the second register are connected, a memory bypass circuit which is located between a first switching circuit and a second switching circuit, and connected to the inputs and the outputs of the memory circuit. The register selection circuit is switched to the output signals of the first register when performing testing by way of the memory circuit, and switched to output signals of the second register when performing testing by way of the memory bypass circuit.

Abstract: Testing of memories that decode a serial stream of address data to access the memory may be performed by either successively halving the number of selected word lines as each address bit is acquired, until a single word line is selected, or by rotating the selection bits in its shift register to select a new set of address lines. As such, a combination of incomplete addressing and rotation can efficiently test large memories by reading and/or writing groups of words. Similar techniques may also be applied to non-memory devices.

Abstract: A tester for testing a semiconductor device is disclosed. The tester for testing the semiconductor device employs a data selector for converting a logical test pattern data transmitted from a pattern generator into a physical test pattern data and an expected data based on the logical test pattern data, thereby generating various timings based on a time delay instead of using a plurality of clocks to improve a test efficiency and reduce a manufacturing cost.

Abstract: A semiconductor integrated circuit is configured to test a high-speed memory at the actual operation speed of the memory, even when the operation speed of the built-in self-test circuit of the integrated circuit is restricted. In order to test a memory operating on a first clock, the integrated circuit is provided with a first test pattern generation section, operating on a second clock, for generating test data, and a second test pattern generation section, operating on a third clock, the inverted clock of the second clock, for generating test data. Furthermore, the integrated circuit is provided with a test data selection section for selectively outputting either the test data output from the first test pattern generation section or the test data output from the second test pattern generation section depending on the signal value of the second clock, thereby inputting the test data to the memory as test data.

Abstract: There is provided a test apparatus for testing a memory under test that is addressable by the number of pulses of an address signal supplied thereto. The test apparatus includes a pattern generating section that generates writing data to be written into the memory under test, a first address generating section having an address information storing section that stores thereon address information indicating an address of the memory under test to which the writing data is to be written, and a waveform shaping section that generates an address signal by outputting one or more pulses at a predetermined time interval during a time period determined in accordance with the address information stored on the address information storing section.

Abstract: A load generating apparatus for applying a load on a bus of a test target system, has a mode setting register to which an operation mode is set, a data size register to which a data size of one data transfer is set, a register group to which a base address which is a first access target address, an address interval for every stride executed by a stride function, and a number of strides are set, and an access part configured to access a memory space within the test target system based on the data size set in the data size register and information set in the register group, depending on the operation mode set in the mode setting register. The access part includes a mechanism to change the access target address to the memory space at the address interval, and a mechanism to generate a data pattern depending on the address interval and the data size, with respect to the memory space of the access target.

Abstract: There is provided a test apparatus that tests a device under test.

Abstract: Provided are a semiconductor integrated circuit (IC) including a pad for a wafer test and a method of testing a wafer including a semiconductor IC. The semiconductor IC includes a first address generator, a second address generator, and an address output unit. The first address generator generates a normal address having (M+N) bits or a first test address having M bits corresponding to voltages applied to a plurality of address pads. The second address generator generates a second test address having N bits corresponding to a voltage applied to an additional pad. Therefore, according to the semiconductor IC and the wafer test method, an additional pad is provided to generate an N-bit test address in wafer test mode such that the number of pads needed to test a device can be reduced. As a result, more semiconductor ICs can be tested simultaneously.

Abstract: A method and a circuit of testing of a memory interface associated with an embedded memory in a semiconductor circuit involves writing to two memory locations in succession; reading the two memory locations in succession in the same order in which the two memory locations were written; capturing output data from the memory interface; and analyzing captured output data to determine whether said captured output data corresponds to expected data.

Abstract: A test apparatus that tests a device under test is provided. The test apparatus includes: a pattern memory that stores in a compression format a test instruction sequence to define a test sequence for testing the device under test; an expanding section mat expands in a non-compression format the test instruction sequence read from the pattern memory; an instruction cache that caches the test instruction sequence which is expanded by the expanding section; a pattern generating section that sequentially reads instructions stored in the instruction cache and executes the same to generate a test pattern for the executed instruction; and a signal output section that generate a test signal based on the test pattern and provides the same to the device under test.

Abstract: A system and method for pseudo-randomly allocating page table memory for test pattern instructions to produce complex test scenarios during processor execution is presented. The invention described herein distributes page table memory across processors and across multiple test patterns, such as when a processor executes “n” test patterns. In addition, the page table memory is allocated using a “true” sharing mode or a “false” sharing mode. The false sharing mode provides flexibility of performing error detection checks on the test pattern results. In addition, since a processor comprises sub units such as a cache, a TLB (translation look aside buffer), an SLB (segment look aside buffer), an MMU (memory management unit), and data/instruction pre-fetch engines, the test patterns effectively use the page table memory to test each of the sub units.

Abstract: A semiconductor integrated circuit has a memory circuit having memory cells, a first register, a second register, a register selection circuit having an input to which an output of the first register and an output of the second register are connected, a memory bypass circuit which is located between a first switching circuit and a second switching circuit, and connected to the inputs and the outputs of the memory circuit. The register selection circuit is switched to the output signals of the first register when performing testing by way of the memory circuit, and switched to output signals of the second register when performing testing by way of the memory bypass circuit.

Abstract: A test device that can improve test reliability is provided. In the test device, an error detecting unit detects an error of inputted test signals to generate an error flag, a normal test unit performs a test operation according to the test signals when the error flag is deactivated, and an error information providing unit indicates the error of the test signals when the error flag is activated.

Abstract: A semiconductor memory test device and method thereof are provided. The example semiconductor memory test device may include a fail memory configured to store at least one test result of a memory under test, a mode selecting unit configured to output a selection signal for selecting a memory address protocol of the fail memory based upon which one of a plurality of test modes is active in the memory under test and an address arranging unit configured to arrange address signals to conform with the selected memory address protocol in response to the selection signal received from the mode selecting unit.

Abstract: A bus station circuit (14) operates in an electronic system with a bus (10). The bus station determines an initial synchronization time point by detecting a synchronization signal pattern on the bus and switching to a synchronization enabled state upon detection of the synchronization signal pattern. Starting points of successive messages are determined head to tail from the end points of immediately preceding messages, when operating in the synchronization enabled state. The content of the messages is tested for validity. The bus station switches to a synchronization disabled state in response to detection of a message with invalid content. While in the synchronization disabled state, use of messages that are received is disabled in the bus station circuit. In the synchronization disabled state the bus station waits for a synchronization event to switch back to the synchronization enabled state.

Abstract: Programmable memory built-in self-test (MBIST) methods, apparatus, and systems are disclosed. Exemplary embodiments of the disclosed technology can be used, for example, to test one or more memories located on an integrated circuit during manufacturing testing.

Abstract: The invention relates to a semi-conductor component test procedure, and a semiconductor component test device (10b), which comprise: a device (43) for generating pseudo-random address values to be applied to corresponding address inputs of a semi-conductor component (2b), in particular a memory component, to be tested.

Abstract: The invention relates to a semi-conductor component test procedure, as well as to a semi-conductor component test device with a shift register, which comprises several memory devices from which pseudo-random values (BLA, COL, ROW) to be used for testing a semi-conductor component are able to be tapped and emitted at corresponding outputs of the semi-conductor component test device, whereby the shift register comprises at least one further memory device, from which a further pseudo-random value (VAR) is able to be tapped and whereby a device is provided, with which the further pseudo-random value (VAR) can selectively, if needed, be emitted at at least one corresponding further output of the semi-conductor component test device.

Abstract: Upon reception of a query about the address of a server from a client, a DNS server sends a query about the address of that server to an external DNS server. The DNS server checks based on the address obtained from the external DNS server if connection to the server can be established. If connection to the server cannot be established, and the DNS server receives a query about the address of the server, the DNS server returns a response indicating that the address is not available. When the address is returned before the check process, the DNS sever sets an expiration time shorter than that of the address of the server obtained from the external DNS server as the expiration time of the address of the server.

Abstract: Provided are a semiconductor integrated circuit (IC) including a pad for a wafer test and a method of testing a wafer including a semiconductor IC. The semiconductor IC includes a first address generator, a second address generator, and an address output unit. The first address generator generates a normal address having (M+N) bits or a first test address having M bits corresponding to voltages applied to a plurality of address pads. The second address generator generates a second test address having N bits corresponding to a voltage applied to an additional pad. Therefore, according to the semiconductor IC and the wafer test method, an additional pad is provided to generate an N-bit test address in wafer test mode such that the number of pads needed to test a device can be reduced. As a result, more semiconductor ICs can be tested simultaneously.

Abstract: A method and apparatus is provided for detecting random access memory (RAM) failure for data with a plurality of addresses. The method comprises generating a plurality of RAM test patterns in a predetermined order, implementing a RAM test pattern on each data address in an initial testing pass, based on the predetermined order of the RAM test patterns, rotating the RAM test patterns sequentially to prepare for a new testing pass, and implementing the RAM test patterns on different data addresses in the new testing pass. The apparatus comprises means for generating a plurality of RAM test patterns in a predetermined order, means for implementing a RAM test pattern on each data address in an initial testing pass, based on the predetermined order of the RAM test patterns, means for rotating the RAM test patterns sequentially to prepare for a new testing pass, and means for implementing the RAM test patterns on different data addresses in the new testing pass.

Abstract: A load generating apparatus for applying a load on a bus of a test target system, has a mode setting register to which an operation mode is set, a data size register to which a data size of one data transfer is set, a register group to which a base address which is a first access target address, an address interval for every stride executed by a stride function, and a number of strides are set, and an access part configured to access a memory space within the test target system based on the data size set in the data size register and information set in the register group, depending on the operation mode set in the mode setting register. The access part includes a mechanism to change the access target address to the memory space at the address interval, and a mechanism to generate a data pattern depending on the address interval and the data size, with respect to the memory space of the access target.

Abstract: To provide a semiconductor integrated circuit that includes a flash EEPROM on which an efficient burn-in test can be carried out and a burn-in test method thereof. By changing the level of a control signal C1 from the mode selecting unit 40, the operating mode of a functional unit 10 is switched from a normal mode to a test mode for reading out data from a ROM 30 storing a test instruction code. Then, by changing the level of the first control signal C2 in the test mode, the destination of an output of the first selection circuit 12 and the operation of the program counter 11 are switched, thereby alternately implementing a first burn-in mode for activating a flash EEPROM 20 and a second burn-in mode for activating the functional unit 10.

Abstract: Testing of memories that decode a serial stream of address data to access the memory may be performed by cither successively halving the number of selected word lines as each address bit is acquired, until a single word line is selected, or by rotating the selection bits in its shift register to select a new set of address lines. As such, a combination of incomplete addressing and rotation can efficiently test large memories by reading and/or writing groups of words. Similar techniques may also be applied to non-memory devices.