Abstract: The invention is suitable for the technical field of electronic circuits, and provides an electronic switch module and an electric tool. The electronic switch module comprises a variable resistor and a first resistor, wherein the variable resistor and the first resistor form a voltage-dividing resistor unit, and the output end of the module is arranged on a connecting line between the variable resistor and the first resistor; one end of the voltage-dividing resistor unit is connected with a power supply, and the other end is grounded; the variable resistor comprises a plurality of second resistors with different resistance values, a conductive member, a first end and a resistance value adjusting member. When the resistance adjusting member slides along the conducting member, the two second resistors provide three different resistance values, so that the loss of the resistors is reduced, and the lightweight design of the product is facilitated.

Abstract: A load lock pressure gauge comprises a housing configured to be coupled to a load lock vacuum chamber. The housing supports an absolute vacuum pressure sensor that provides instantaneous high vacuum pressure signal over a range of high vacuum pressures and a differential diaphragm pressure sensor that provides an instantaneous differential pressure signal between load lock pressure and ambient pressure. The housing further supports an absolute ambient pressure sensor. A low vacuum absolute pressure is computed from the instantaneous differential pressure signal and the instantaneous ambient pressure signal. A controller in the housing is able to recalibrate the differential diaphragm pressure sensor based on measured voltages of the sensor and a measured ambient pressure during normal operation of the pressure gauge with routine cycling of pressure in the load lock.

Abstract: A device for measuring fluid parameters may be modular or integrally formed. The device is positioned on a machine that includes one or more fluids to be monitored, and the device includes a (1) controller, (2) spacer that connects to a power source and that may include one or more connectors to connect to remote sensors, and (3) an optional manifold through which the fluid may pass. The manifold could include fluid sensors and/or be connectable to a sample bottle for the purpose of taking fluid samples.

Abstract: An oscillating positive expiratory pressure system including an oscillating positive expiratory pressure device, an adapter coupled to the device, and a control module coupled to the adapter. The control module provides real time information about the use of the device, and provides feedback and storage of the information to improve the use thereof.

Abstract: A pressure detection unit includes a pressure receiving structure including a ring-shaped ring member, a receiving member facing the ring member, and a diaphragm interposed between the ring member and the receiving member, a base made of ceramic joined to the ring member to form a pressure receiving space between the base and the diaphragm, a semiconductor type pressure detection device installed on a side of the pressure receiving space of the base, and a terminal pin which is electrically connected to the semiconductor type pressure detection device and penetrates the base.

Abstract: An electronic chip including: a plurality of first semiconductor bars of a first conductivity type and of second semiconductor bars of a second conductivity type arranged alternately and contiguously on a region of the first conductivity type; two detection contacts arranged at the ends of each second bar; a circuit for detecting the resistance between the detection contacts of each second bar; insulating trenches extending in the second bars down to a first depth between circuit elements; and insulating walls extending across the entire width of each second bar down to a second depth greater than the first depth.

Abstract: According to one embodiment, a microphone package includes: a pressure sensing element including a film and a device; and a cover. The film generates strain in response to pressure. The device includes: a first electrode; a second electrode; and a first magnetic layer. The first magnetic layer is provided between the first electrode and the second electrode and has a first magnetization. The cover includes: an upper portion; and a side portion. The side portion is magnetic and provided depending on the first magnetization and the second magnetization.

Abstract: A semiconductor pressure sensor device in which the shape or the structure of a connector portion can be easily changed and which has high waterproof performance. A terminal housing and a second case are engaged with each other via an engagement structure. The terminal housing and a first case are fitted with each other via a fitting structure. Thus, the first case and the second case are fixed to each other via the terminal housing. The first case is fitted in the second case. Then, the terminal housing is fitted with the first case, and the terminal housing is engaged with the second case substantially at the same time. Through such simple process, an opening portion of the first case is covered and a connector portion configured to enable external terminals to be connected to ends, located on one side, of a plurality of lead terminals is formed.

Abstract: A microelectromechanical pressure sensor structure wherein the length of the diaphragm is at least three times the width of the diaphragm. The oblong diaphragm experiences a minimized difference between lateral bending of the wafer and of the diaphragm along the width of the diaphragm. In a perpendicular direction, the diaphragm is at least three times longer due to which it accurately aligns with the bending form of the wafer. Due to this, the total error caused by bending of the structure is significantly reduced and a more robust structure is achieved. At the same time, the longer diaphragm provides mode deflected area for detection and thus significantly improves sensitivity of the device.

Abstract: A pressure sensor package includes a lead and a semiconductor die spaced apart from the lead and including a terminal and a diaphragm disposed at a first side of the die. The die is configured to change an electrical parameter responsive to a pressure difference across the diaphragm. The package further includes an electrical conductor connecting the terminal to the lead, a molding compound encasing the electrical conductor, the die and part of the lead, a cavity in the molding compound exposing the diaphragm, and a sealing ring disposed on a side of the molding compound with the cavity. The sealing ring surrounds the cavity and has a lower elastic modulus than the molding compound. Alternatively, the sealing ring can be a ridge of the molding compound that protrudes from the side of the molding compound with the cavity and surrounds the cavity. A package manufacturing method is also provided.

Abstract: A micromechanical sensor system includes a micromechanical sensor chip surrounded at least laterally by a molded housing which has a front side and a rear side. The micromechanical sensor chip includes a chip area on the rear side, which is omitted from the molded housing, and a rewiring device formed on the rear side, which, starting from the chip area, extends to the surrounding molded housing on the rear side, and from there, past at least one via from the rear side to the front side of the molded housing.

Abstract: A semiconductor pressure sensor (720) includes a thin film piezoelectric element (701) which applies strain to a portion of a semiconductor substrate that corresponds to a thin region (402). The thin film piezoelectric element (701) is formed at a distance away from diffusion resistors (406, 408, 410, and 412) functioning as strain gauges and is extended to the proximity of a bonding pad (716A) connected to an upper electrode layer of the thin film piezoelectric element and a bonding pad (716F) connected to a lower electrode thereof. The diffusion resistors (406, 408, 410, and 412) constitute a bridge circuit by metal wiring (722) and diffusion wiring (724). During self-diagnosis, a prescribed voltage is applied to a thin film piezoelectric element (701). If the output difference of the bridge circuit between before and after the voltage application falls outside a prescribed range, it is determined that a breakage occurs in the semiconductor pressure sensor (720).

Abstract: A catheter die is provided and includes an elongate body having first and second opposing end portions and an end face at the first one of the first and second opposing end portions. The elongate body defines a cavity within the first end portion with an interior facing surface of the cavity disposed to extend alongside at least a portion of the first end face. At least one or more piezoresistive pressure sensors are operably disposed proximate to the cavity.

Abstract: The invention prevents a pressure receiving space of a pressure sensor from being electrically charged. In a pressure sensor, a diaphragm is attached to a base which is fixed within a cover and a pressure receiving space in which an oil is sealed is formed. A semiconductor type pressure detecting device is connected to a plurality of terminal pins by a bonding wire. A neutralization plate attached to a periphery of the semiconductor type pressure detecting device or a part of the periphery thereof is connected to an earth terminal pin by an earth bonding wire, or is connected to the earth terminal pin by a soldering so as to prevent an insulative medium sealed within the pressure receiving space from being electrically charged.

Abstract: Pressure sensors having components with reduced variations due to stresses caused by various layers and components that are included in the manufacturing process. In one example, a first stress in a first direction causes a variation in a component. A second stress in a second direction is applied, thereby reducing the variation in the component. The first and second stresses may be caused by a polysilicon layer, while the component may be a resistor in a Wheatstone bridge.

Abstract: A pressure sensor device comprises a support substrate including a thin film area which is bendable by a pressure, a sensor film comprising a first electrode provided on the thin film area, a second electrode provided on the first electrode, a reference layer provided between the first electrode and the second electrode, a free layer provided between the reference layer and the first electrode or between the reference layer and the second electrode, a spacer layer provided between the reference layer and the free layer, a shield provided on a side of the support substrate.

Abstract: The present invention, in one embodiment, provides a method of measuring pressure or temperature using a sensor including a sensor element composed of a plurality of carbon nanotubes. In one example, the resistance of the plurality of carbon nanotubes is measured in response to the application of temperature or pressure. The changes in resistance are then recorded and correlated to temperature or pressure. In one embodiment, the present invention provides for independent measurement of pressure or temperature using the sensors disclosed herein.

Abstract: The present invention discloses a Micro-Electro-Mechanical System (MEMS) pressure sensor device and a manufacturing method thereof. The MEMS pressure sensor device includes: a substrate having at least one recess formed on an upper surface thereof, the recess defining a boss; a membrane, which is bonded to at least a part of the upper surface and at least a part of the boss, so that the at least one recess forms a cavity; at least one sensing unit, which is coupled to the membrane, for sensing deflection of the membrane; and an opening, which is formed on a lower surface of the substrate, and connects to the cavity.

Abstract: A semiconductor device includes a substrate including a cavity and a first material layer over at least a portion of sidewalls of the cavity. The semiconductor device includes an oxide layer over the substrate and at least a portion of the sidewalls of the cavity such that the oxide layer lifts off a top portion of the first material layer toward a center of the cavity.

Abstract: Pressure sensors having components with reduced variations due to stresses caused by various layers and components that are included in the manufacturing process. In one example, a first stress in a first direction causes a variation in a component. A second stress in a second direction is applied, thereby reducing the variation in the component. The first and second stresses may be caused by a polysilicon layer, while the component may be a resistor in a Wheatstone bridge.

Abstract: A pressure sensor for measuring the location and intensity of an applied pressure, including an elastomeric sheet; and a plurality of micro-channels embedded in the elastomeric sheet.

Abstract: An implantable intraocular pressure sensor system has a sealed geometric shape with an internal pressure at a first value. A strain gauge wire is embedded in a surface of the sealed geometric shape. When the surface is deflected by intraocular pressure, a measured resistance of the strain gauge wire indicates the intraocular pressure. The system also has a processor coupled to a power source and memory. The processor is configured to read the measured resistance and write values corresponding to intraocular pressure to the memory.

Abstract: A push-button switch test device having a flexible tab fixedly attached to a pushing member. The flexible tab is made of a flexible material and includes a deformation sensitive resistor mounted on a surface. The push-button switch test device may be used to test a push-button by imposing a known force on the flexible tab while receiving a signal level across the deformation sensitive resistor. As the known force pushes on the flexible tab, the signal level indicates when the push-button has engaged. The force may then be reversed to permit sensing of the disengagement of the switch. Configurations of a plurality of push-button switch test devices may be arranged in a test frame that mirrors a configuration of push-button switches.

Abstract: A measurement element includes a semiconductor substrate with electrical insulating film formed thereon. A resistor formed on the electrical insulating film constitutes a heater; and a cavity is formed by removing a portion of the semiconductor substrate that corresponds to a region where a body part of the resistor is formed. The region where the body part of the resistor is formed is formed into a thin wall part by the cavity, and an opening and a slit is formed in a portion of the thin wall part in such a manner as to penetrate the thin wall part in the thickness direction. The measurement element has a film formed covering the region of the opening or slit.

Abstract: A pressure sensor comprises a sensor platform; a measuring membrane, or diaphragm, which is held by the sensor platform, and can have a pressure applied to it and is deformable as a function of pressure; and at least two resistance elements having an AlxGa1—xN layer. At least a first resistance element of the at least two resistance elements is arranged on the measuring membrane, or diaphragm and has a deformation-dependent resistance value. The pressure sensor can be operated using a measurement circuit to register a signal which depends on the resistance values of the at least two resistance elements in the plane of the AlxGa1—xN layer. Four resistance elements are preferably provided in a full bridge.

Abstract: A semiconductor pressure sensor is provided that includes a diaphragm, a resistive element arranged at an upper portion of the diaphragm, an insulating film arranged on an upper face of the resistive element and an upper face of the diaphragm, a via that penetrates through a portion of the insulating film and comes into contact with the resistive element, and wiring that is electrically connected to the resistive element through the via. The insulating film includes a concave portion having a bottom face that is substantially flat. The wiring is arranged on the bottom face of the concave portion, and the depth of the concave portion is substantially equal to the thickness of the wiring.

Abstract: For example, to adjust an offset of a pressure sensor, there are provided an external resistor RE and an internal resistor circuit that is connected to both ends of RE and formed in a semiconductor chip such as a processor. The internal resistor circuit includes N pieces of internal resistors RI connected in series between both ends of RE, and (N+1) pieces of switches selecting one of voltages of respective nodes of the serial resistors and outputs the same as a signal. RE has a high absolute value precision of, e.g., several ten ohms to several hundred ohms, and RI has a high relative value precision of, e.g., several kilo-ohms. Therefore, an offset adjustment range is decided at a high absolute value precision mainly by RE, and with regard to the arrangement resolution, a high precision can be obtained along with the relative value precision of the RI.

Abstract: In a device for measuring the pressure of a medium, in particular a liquid medium, the device including a measuring chamber through which the medium can flow and which has at least one elastically deformable wall, at least one wall that is more rigid by comparison to the elastically deformable wall, and an inlet and outlet for the medium, at least one excitation electrode is provided in or on the at least one more rigid wall of the measuring chamber, and at least one signal electrode is provided on the elastically deformable wall, for impedance measurement.

Abstract: An object of the present invention is to provide a structure unlikely to break in the dicing process while allowing easy execution of screening, for a measurement element in which a resistor constituting a heater is formed on a thin wall part thermally insulated from a semiconductor substrate by providing a cavity part formed in the semiconductor substrate. Provided is a measurement element including: a semiconductor substrate; an electrical insulating film formed on the semiconductor substrate; a resistor formed on the electrical insulating film, the resistor constituting a heater; and a cavity formed by removing a portion of the semiconductor substrate that corresponds to a region where a body part of the resistor is formed. The region where the body part of the resistor is formed is formed into a thin wall part by the cavity, and any of an opening and a slit is formed in a portion of the thin wall part in such a manner as to penetrate the thin wall part in a thickness direction thereof.

Abstract: A pressure sensor for a pressure medium includes: a sensor chip including a semiconductor substrate, a diaphragm in the substrate and a gauge resistor on the diaphragm; a protection cap covering the diaphragm; a case for accommodating the chip, introducing the pressure medium to the cap, and atmospheric air to the substrate; a terminal; a wiring; and a seal member. An embedded portion of the wiring is coupled with the gauge resistor. A connection portion of the wiring couples the embedded portion and the terminal. The embedded portion is covered with the cap to be isolated from the pressure medium. The seal member is disposed between the case and the substrate to isolate the connection portion from the pressure medium and the atmospheric air.

Abstract: A miniature pressure transducer is disclosed which is able to operate at high temperatures. The pressure transducer is provided on a substrate comprising an elongate silicon base portion with one or more contact areas formed at one end and a diaphragm formed at the opposite distal end. A plurality of piezoresistive elements are provided on the diaphragm, preferably in a Wheatstone Bridge arrangement, and connected to the contact areas using interconnects. The diaphragm extends across substantially the entire effective width of the elongate base portion providing a compact width whilst still maintaining a sensitive pressure sensing capability.

Abstract: A semiconductor pressure sensor includes a diaphragm; a resistor provided on a top surface of the diaphragm; an insulating film formed on the diaphragm and the resistor having a penetrating part exposing a top surface of the resistor; and a wiring pattern formed from the top surface of the resistor exposed by the penetrating part to a top surface of the insulating film; wherein a distance between a first crossing part where a plane orthogonal to the top surface of the diaphragm meets a top end of a side plane of the penetrating part and a second crossing part where the plane orthogonal to the top surface of the diaphragm meets a bottom of the side plane of the penetrating part is equal or greater than a thickness of the insulating film by a factor of a square root of two.

Abstract: A pressure sensor for a pressure medium includes: a sensor chip (3) including a semiconductor substrate (3a), a diaphragm (3b) in the substrate and a gauge resistor (3c) on the diaphragm; a protection cap (5) covering the diaphragm; a case (2) for accommodating the chip, introducing the pressure medium to the cap, and atmospheric air to the substrate; a terminal (2c); a wiring (4); and a seal member (7). An embedded portion (4a-4c, 4e) of the wiring is coupled with the gauge resistor. A connection portion (4d, 4f) of the wiring couples the embedded portion and the terminal. The embedded portion is covered with the cap to be isolated from the pressure medium. The seal member is disposed between the case and the substrate to isolate the connection portion from the pressure medium and the atmospheric air.

Abstract: A semiconductor pressure sensor includes a diaphragm; a resistor provided on a top surface of the diaphragm; an insulating film formed on the diaphragm and the resistor having a penetrating part exposing a top surface of the resistor; and a wiring pattern formed from the top surface of the resistor exposed by the penetrating part to a top surface of the insulating film; wherein a distance between a first crossing part where a plane orthogonal to the top surface of the diaphragm meets a top end of a side plane of the penetrating part and a second crossing part where the plane orthogonal to the top surface of the diaphragm meets a bottom of the side plane of the penetrating part is equal or greater than a thickness of the insulating film by a factor of a square root of two.

Abstract: A semiconductor pressure sensor is provided that includes a diaphragm, a resistive element arranged at an upper portion of the diaphragm, an insulating film arranged on an upper face of the resistive element and an upper face of the diaphragm, a via that penetrates through a portion of the insulating film and comes into contact with the resistive element, and wiring that is electrically connected to the resistive element through the via. The insulating film includes a concave portion having a bottom face that is substantially flat. The wiring is arranged on the bottom face of the concave portion, and the depth of the concave portion is substantially equal to the thickness of the wiring.

Abstract: A sensor preferably capable of high resolution sensing over a large operating range includes a composite diaphragm containing nanotubes or nanowires. The nanotubes or nanowires preferably form a mat that is embedded in insulating material, such as high dielectric or insulating thin films. The nanotubes or nanowires may provide the diaphragm with a Young's modulus of greater than about 1000 GPa and a tensile strength of greater than about 100 GPa. The strain in the nanotubes or nanowires may be measured by a change in resistance, voltage, current or capacitance.

Abstract: Membrane (24) of a shell (20) of a pressure sensor, having an upper and lower chamber (34, 23), wherein the membrane is made by a support wall (36) and a cap (41) having an upper and lower sheets (31, 32), the support wall having a central aperture (33), the support wall separating but for its central aperture the lower from the upper chamber, the lower sheet (32) having a central aperture (38), edges of the central apertures (33, 38) of the support wall (36) and of the lower sheet (32) respectively being welded to one another, peripheries (37) of the upper and lower sheet (31, 32) being welded to one another so that a volume (40) is present between said upper and lower sheets (31, 32), said volume being in the upper chamber (34) and communicating through the central apertures (33, 38) of the support wall (36) and of the lower sheet (32) respectively, with the lower chamber (23).

Abstract: A resistive thin film (1) made of grains (3) of conductive material having an average size, in a dielectric medium (2) is characterized by the total thickness of the film (1) being between 3 and ten times the average size of the grains (3). The film (1) is used to make a cell of a pressure sensor and the cell is included in a shell of a pressure sensor.

Abstract: A pressure detection device includes a sensing part that is provided at one end portion of the housing to output an electrical signal responsive to an applied pressure, a circuit part that is provided at an other end portion of the housing to process the signal from the sensing part, and a flexible printed board provided in the housing between the sensing part and the circuit part. Furthermore, the flexible printed board has a first end portion electrically connected to the sensing part at a first connecting part, and a second end portion electrically connected to the circuit part at a second connecting part. In the pressure detection device, the flexible printed board is shaped between the first and second end portions to relieve a stress applied to the connecting parts.

Abstract: A method and system of providing power to a pressure and temperature sensing element is provided. Polarity switching is added to a current source for a sensor, which includes one piezo-resistive sensing element configured as a single implant square located at an edge of a diaphragm of the element, and which produces pressure and temperature outputs. The piezo-sensing element operates as a piezo-resistive radial element when current is conducted through the element radially with respect to the diaphragm. Conversely, the piezo-sensing element operates as a piezo-resistive tangential element when current is conducted through the element tangentially to the edge of the diaphragm. A difference in the radial and tangential resistances is proportional to an applied pressure, while a sum of the resistances is a function of temperature. By alternating the polarity of power applied to the sensor, a build up of ions resulting from PUD is minimized.

Abstract: A fluid pressure sensor (1) for measuring the pressure of a fluid comprises a diaphragm portion (12) which is a strain generating body, a silicon oxide film (21) as an insulating film, and a strain gauge (20) made of crystalline silicon, and austenitic precipitation hardening type Fe—Ni heat-resisting steel excellent in mechanical strength and corrosion resistance is used for the diaphragm portion (12). The silicon oxide film (21) is formed with the internal stress thereof adjusted to the range from ?150 to 130 MPa. With this feature, the fluid pressure sensor (1) ensures high precision and reliability, and may be used even for measurement of a highly corrosive fluid.

Abstract: In a resistively heated heat-loss pressure gauge, electrical current is switched between a sensing element and a compensating element at different duty cycles. As a result, the sensing element is heated relative to the compensating element. A fixed resistance is placed in series with at least the compensating element. The current source applies current to heat the sensing element to a temperature at which the resistance of the sensing element matches the combined resistance of the compensating element and the fixed resistive element.

Abstract: A pressure sensor for sensing a pressure level of a pressurized medium. The pressure sensor includes a housing that has a high pressure side, a low pressure side and an aperture. A substrate is located in the aperture. The substrate has a pair of ends and a center portion. The center portion is brazed to the housing in the aperture. The center portion seals the high pressure side from the low pressure side. A pressure sensitive resistor is mounted to one end of the substrate. A reference resistor is mounted to another end of the substrate. A circuit line is located on the substrate. The circuit line is connected between the pressure sensitive resistor and the reference resistor.

Abstract: A 3D liquid detection sensor, liquid-sensitive building material, and liquid detection systems have been provided. The 3D sensor comprises a 3D liquid detection field and an electrical connector to supply a resistance measurement responsive to liquid in the detection field. In one aspect, the 3D liquid detection field includes a first plurality of pins having a distal end electrically connected to a first electrical contact of the electrical connector, and a second plurality of pins having a distal end electrically connected to a second electrical contact. In one aspect, each pin includes a building material attachment barb attached to a pin proximal end. This permits the sensor to be fixedly mounted in drywall or ceiling tile, for example. More specifically, the 3D detection field may include a dielectric sheet (either rigid or flexible), and electrically conductive traces formed overlying the dielectric sheet, with pins extending from the traces.

Abstract: One aspect is a pressure transducer package comprising a housing, a diaphragm, a support disposed in the housing and a sensing element disposed in the housing between the diaphragm and the support so that the pressure from the environment acts on the diaphragm to compress the sensing element. The sensing element comprises at least one substrate having a coefficient of thermal expansion greater than 4 ppm/k. In another aspect, the sensing element comprises at least one substrate formed of a first material and an epitaxial layer of a second material having a lower coefficient of thermal expansion. In a further aspect, the support abuts the housing at a spherically-shaped interface to compensate for misalignment between the support and the sensing element to ensure that the sensing element is evenly loaded.

Abstract: One aspect is a pressure transducer package comprising a housing, a diaphragm, a support disposed in the housing and a sensing element disposed in the housing between the diaphragm and the support so that the pressure from the environment acts on the diaphragm to compress the sensing element. The sensing element comprises at least one substrate having a coefficient of thermal expansion greater than 4 ppm/k. In another aspect, the sensing element comprises at least one substrate formed of a first material and an epitaxial layer of a second material having a lower coefficient of thermal expansion. In a further aspect, the support abuts the housing at a spherically-shaped interface to compensate for misalignment between the support and the sensing element to ensure that the sensing element is evenly loaded.

Abstract: In a pressure sensor module according to the prior art, which is intended for detecting the pressure of a corrosive medium, the conventional sensor cell with a pressure sensor chip is modified in order to protect it from corrosion, which results in a large volume for a pressure-transmitting-fluid. This is disadvantageous for the calibration and for a high degree of measurement precision. In a pressure sensor module (1) according to the invention, a convention sensor cell (5) is used that has an adapter (21) connected to it, which has a very small volume for a pressure-transmitting medium.

Abstract: A thermal pressure sensor monitors pressure by measuring effects caused by variations of thermal conductivity between a member and a substrate to which the member is adhered by stiction. The interface between the member and the substrate behaves as an extremely narrow gap. In a preferred embodiment the member is a bridge extending between a pair of cantilever arms. Two pressure sensors may be combined in a Wheatstone bridge configuration. A method for fabricating a pressure sensor according to the invention comprises forming a layer of oxide on a substrate, depositing a layer of material on the oxide layer, forming the member from the layer of material, removing the oxide layer and then bringing the member into contact with the substrate. The portion of the substrate under the member may be patterned with plateaus and valleys.

Abstract: A heat loss gauge for measuring gas pressure in an environment includes a resistive sensing element and a resistive compensating element. The resistive compensating element is in circuit with the sensing element and has temperature response and physical characteristics substantially matching those of the resistive sensing element and is exposed to a substantially matching environment. An electrical source is connected to the sensing element for applying current to heat the sensing element relative to the compensating element. Measuring circuitry is connected to the sensing element and the compensating element for determining gas pressure in the environment to which the sensing element and compensating element are exposed based on electrical response of the sensing element and the compensating element.

Abstract: A micromechanical component (10) in which lateral deformations, i.e., deformations of the component (10) parallel to its two main surfaces, are concentrated in a defined area of the component structure, making it possible to decouple lateral and vertical stresses in the component (10). The component structure includes at least one bellows-like structure (11) in which lateral deformations of the component (10) are concentrated.