Piezoresistive Patents (Class 73/727)
  • Patent number: 10378985
    Abstract: Methods of manufacturing a pressure sensor are provided. In preferred embodiments, the method comprises: forming a cavity in a first side of a silicon starting material; depositing a layer of a second material over the cavity; removing a first portion of material above the cavity from a second side of the silicon starting material to expose the second material to the second side to form a diaphragm from the second material and wherein, a second portion of material above the cavity that was not removed from the silicon starting material, forms at least one support structure that spans the diaphragm, wherein the second side is opposite to the first side; and forming at least one piezoresistor in the silicon starting material over an intersection of the support structure and the silicon starting material at an outside edge of the diaphragm on the second side.
    Type: Grant
    Filed: December 8, 2015
    Date of Patent: August 13, 2019
    Assignee: DUNAN SENSING, LLC
    Inventor: Tom Kwa
  • Patent number: 10260981
    Abstract: A pressure sensor includes a diaphragm suspended across a cavity in a substrate. A first group of piezoresistors is provided in the diaphragm, the piezoresistors of the first group being coupled to one another to form a first Wheatstone bridge having first positive and negative output nodes. A second group of piezoresistors is provided in the diaphragm, the piezoresistors of the second group being coupled to one another to form a second Wheatstone bridge having second positive and negative output nodes. The first negative output node of the first Wheatstone bridge is electrically connected to the second positive output node of the second Wheatstone bridge to directly chain the outputs of the Wheatstone bridges. The first and second Wheatstone bridges each produce an output signal as a function of an external pressure stimulus that is combined via the chained arrangement of the Wheatstone bridges to produce a composite output signal.
    Type: Grant
    Filed: February 6, 2017
    Date of Patent: April 16, 2019
    Assignee: NXP USA, Inc.
    Inventors: Paige M. Holm, Mark Edward Schlarmann
  • Patent number: 10197463
    Abstract: Provided are a dynamic quantity measuring device having higher accuracy and longer-term reliability than in the prior art, and a pressure sensor using the same. A dynamic quantity measuring device is provided with a first Wheatstone bridge configured by an impurity diffused resistor on a principal surface of one semiconductor substrate, and detects a difference between strain quantities respectively generated in an x-axis direction and a y-axis direction that are orthogonal to each other on the principal surface of the semiconductor substrate by the first Wheatstone bridge, the dynamic quantity measuring device being provided with, on the principal surface of the semiconductor substrate, a second Wheatstone bridge for detecting the strain quantity in the x-axis direction, and a third Wheatstone bridge for detecting the strain quantity in the y-axis direction.
    Type: Grant
    Filed: June 1, 2015
    Date of Patent: February 5, 2019
    Assignee: Hitachi Automotive Systems, Ltd.
    Inventor: Kentarou Miyajima
  • Patent number: 10167187
    Abstract: A physical quantity sensor includes a first sensor element, and an outer edge portion arranged in at least part of the outer periphery of the first sensor element, and a first groove extending in a first direction provided in the outer edge portion in a plan view of the outer edge portion.
    Type: Grant
    Filed: July 9, 2014
    Date of Patent: January 1, 2019
    Assignee: Seiko Epson Corporation
    Inventor: Satoru Tanaka
  • Patent number: 10101231
    Abstract: A pressure sensor includes a sensor body with a sensor chamber in the interior, at least a first separating membrane, forming a first separating membrane chamber connected with the sensor body. A measuring membrane divides the sensor chamber into two chamber portions. A pressure transfer liquid, with which the first separating membrane chamber, the first chamber portion and a channel therebetween are filled, in order to transfer a pressure to the measuring membrane; wherein the pressure sensor is specified for a temperature range between a minimum temperature and a maximum temperature, as well as for a pressure range.
    Type: Grant
    Filed: November 11, 2010
    Date of Patent: October 16, 2018
    Assignee: ENDRESS+HAUSER SE+CO.KG
    Inventors: Anh Tuan Tham, Rafael Teipen, Michael Philipps
  • Patent number: 10006822
    Abstract: A semiconductor sensor assembly for use in a corrosive environment comprises a processing device comprising at least one first bondpad of a material which may be corroded by a corrosive component in a corrosive environment; a sensor device comprising at least one second bondpad consisting of and/or being covered by a first corrosion resistant material; at least one bonding wire for making a signal connection between the at least one first bondpad of the processing device and the second bondpad of the sensor device. The processing device is partially overmoulded by a second corrosion resistant material, and is partially exposed to a cavity in the corrosion resistant material, with the sensor device being present in the cavity. A redistribution layer is provided to enable signal connection between the processing device and the sensor device is physically made in the cavity while the second corrosion resistant material covers the first bondpad.
    Type: Grant
    Filed: June 21, 2017
    Date of Patent: June 26, 2018
    Assignee: MELEXIS TECHNOLOGIES NV
    Inventors: Jian Chen, Laurent Otte
  • Patent number: 9964458
    Abstract: The voltage output span and sensitivity from a MEMS pressure sensor are increased and pressure nonlinearity is reduced by thinning a diaphragm and forming the diaphragm to include anchors that are not connected to or joined to diaphragm-stiffening beams or thickened regions of the diaphragm.
    Type: Grant
    Filed: May 12, 2016
    Date of Patent: May 8, 2018
    Assignee: Continental Automotive Systems, Inc.
    Inventors: Jen-Huang Albert Chiou, Shiuh-Hui Steven Chen
  • Patent number: 9835515
    Abstract: A pressure sensor is for positioning within a structure. The pressure sensor may include a pressure sensor integrated circuit (IC) having a pressure sensor circuit responsive to bending, and a transceiver circuit coupled to the pressure sensor circuit. The pressure sensor may include a support body having a recess therein coupled to the pressure sensor IC so that the pressure sensor IC bends into the recess when the pressure sensor IC is subjected to external pressure.
    Type: Grant
    Filed: October 10, 2014
    Date of Patent: December 5, 2017
    Assignee: STMicroeletronics S.r.l.
    Inventor: Alberto Pagani
  • Patent number: 9804047
    Abstract: A pressure sensor with double measuring scale includes: a flexible body designed to undergo deflection as a function of a the pressure; piezoresistive transducers for detecting the deflection; a first focusing region designed to concentrate, during a first operating condition, a first value of the pressure in a first portion of the flexible body so as to generate a deflection of the first portion of the flexible body; and a second focusing region designed to concentrate, during a second operating condition, a second value of said pressure in a second portion of the flexible body so as to generate a deflection of the second portion of the flexible body. The piezoresistive transducers correlate the deflection of the first portion of the flexible body to the first pressure value and the deflection of the second portion of the flexible body to the second pressure value.
    Type: Grant
    Filed: January 6, 2016
    Date of Patent: October 31, 2017
    Assignee: STMicroelectronics S.r.l.
    Inventors: Alberto Pagani, Bruno Murari, Marco Ferrera, Domenico Giusti, Daniele Caltabiano
  • Patent number: 9790082
    Abstract: A device comprises a silicon-on-insulator (SOI) substrate having first and second silicon layers with an insulator layer interposed between them. A structural layer, having a first conductivity type, is formed on the first silicon layer. A well region, having a second conductivity type opposite from the first conductivity type, is formed in the structural layer, and resistors are diffused in the well region. A metallization structure is formed over the well region and the resistors. A first cavity extends through the metallization structure overlying the well region and a second cavity extends through the second silicon layer, with the second cavity stopping at one of the first silicon layer and the insulator layer. The well region interposed between the first and second cavities defines a diaphragm of a pressure sensor. An integrated circuit and the pressure sensor can be fabricated concurrently on the SOI substrate using a CMOS fabrication process.
    Type: Grant
    Filed: September 21, 2016
    Date of Patent: October 17, 2017
    Assignee: NXP USA, Inc.
    Inventors: Lianjun Liu, Amitava Bose
  • Patent number: 9709425
    Abstract: A sensor includes a sensor element; a circuit board having an element attachment surface on which the sensor element is mounted; a casing member for housing the circuit board, the casing member having a measurement chamber which faces the sensor element and communicates with the target atmosphere through a gas inlet; an annular elastic seal member which is interposed between the element attachment surface and the casing member in such a manner that the elastic seal member is in contact with the element attachment surface. The elastic seal member is made of foamed rubber and has an end surface flat portion which faces the casing member and another end surface flat portion which faces the element attachment. The elastic seal member is interposed between the element attachment surface and the casing member such that the elastic seal member is compressed between the flat portions of the end surfaces.
    Type: Grant
    Filed: November 11, 2014
    Date of Patent: July 18, 2017
    Assignee: NGK SPARK PLUG CO., LTD.
    Inventors: Ryosuke Matsui, Shingo Yoshida, Shinichi Sawada
  • Patent number: 9689824
    Abstract: A semiconductor-based multi-sensor module integrates miniature temperature, pressure, and humidity sensors onto a single substrate. Pressure and humidity sensors can be implemented as capacitive thin film sensors, while the temperature sensor is implemented as a precision miniature Wheatstone bridge. Such multi-sensor modules can be used as building blocks in application-specific integrated circuits (ASICs). Furthermore, the multi-sensor module can be built on top of existing circuitry that can be used to process signals from the sensors. An integrated multi-sensor module that uses differential sensors can measure a variety of localized ambient environmental conditions substantially simultaneously, and with a high level of precision. The multi-sensor module also features an integrated heater that can be used to calibrate or to adjust the sensors, either automatically or as needed.
    Type: Grant
    Filed: October 19, 2015
    Date of Patent: June 27, 2017
    Assignee: STMICROELECTRONICS PTE LTD.
    Inventors: Olivier Le Neel, Ravi Shankar, Suman Cherian, Calvin Leung, Tien-Choy Loh, Shian-Yeu Kam
  • Patent number: 9676609
    Abstract: An integrated MEMS device is provided. The integrated MEMS device comprises a circuit chip and a device chip. The circuit chip has a patterned first bonding layer disposed thereon, the bonding layer being composed of a conductive material/materials. The device chip has a first structural layer and a second structural layer, the first structural layer being connected to the second structural layer and the first bonding layer of the circuit chip, and being sandwiched between the second structural layer and the circuit chip. A plurality of hermetic spaces are enclosed by the first structural layer, the second structural layer, the first bonding layer and the circuit chip.
    Type: Grant
    Filed: May 3, 2016
    Date of Patent: June 13, 2017
    Assignee: Asia Pacific Microsystems, Inc.
    Inventor: Jerwei Hsieh
  • Patent number: 9651441
    Abstract: The voltages output from a low-pressure MEMS sensor are increased by increasing the sensitivity of the sensor. Sensitivity is increased by thinning the diaphragm of the low pressure sensor device with corner trench. Nonlinearity increased by thinning the diaphragm is reduced by simultaneously creating a cross stiffener to the bottom side of the diaphragm. A rim, anchors, and a stiffener pad can also be added to further stiffen the thinner diaphragm and further reduce pressure nonlinearity.
    Type: Grant
    Filed: May 5, 2015
    Date of Patent: May 16, 2017
    Assignee: Continental Automotive Systems, Inc.
    Inventors: Jen-Huang Albert Chiou, Shiuh-Hui Steven Chen
  • Patent number: 9487388
    Abstract: Described herein are ruggedized wafer level MEMS force dies composed of a platform and a silicon sensor. The silicon sensor employs multiple flexible sensing elements containing Piezoresistive strain gages and wire bonds.
    Type: Grant
    Filed: June 21, 2013
    Date of Patent: November 8, 2016
    Assignee: NextInput, Inc.
    Inventor: Amnon Brosh
  • Patent number: 9448130
    Abstract: A sensor arrangement for sensing an environmental property of an environment of the sensor arrangement, the sensor arrangement comprising: a carrier; an active sensor component arranged at the carrier and configured for providing a sensor signal being indicative of the environmental property; a molding structure encapsulating at least a part of an exterior surface of the carrier and comprising an access recess exposing the active sensor component with regard to the environment; wherein the access recess is arranged asymmetrically with regard to the carrier.
    Type: Grant
    Filed: August 31, 2013
    Date of Patent: September 20, 2016
    Assignee: Infineon Technologies AG
    Inventors: Mathias Vaupel, Horst Theuss, Thomas Lehmann
  • Patent number: 9383270
    Abstract: The various technologies presented herein relate to a sensor for measurement of high forces and/or high load shock rate(s), whereby the sensor utilizes silicon as the sensing element. A plate of Si can have a thinned region formed therein on which can be formed a number of traces operating as a Wheatstone bridge. The brittle Si can be incorporated into a layered structure comprising ductile and/or compliant materials. The sensor can have a washer-like configuration which can be incorporated into a nut and bolt configuration, whereby tightening of the nut and bolt can facilitate application of a compressive preload upon the sensor. Upon application of an impact load on the bolt, the compressive load on the sensor can be reduced (e.g., moves towards zero-load), however the magnitude of the preload can be such that the load on the sensor does not translate to tensile stress being applied to the sensor.
    Type: Grant
    Filed: October 28, 2013
    Date of Patent: July 5, 2016
    Assignee: Sandia Corporation
    Inventors: Paul C. Galambos, Thomas B. Crenshaw, Erik E. Nishida, Damon J. Burnett, Jeffrey W. Lantz
  • Patent number: 9305829
    Abstract: A semiconductor package includes a substrate, at least one electronic device, a lead frame, and a molded portion. The substrate has at least one indented portion formed as a groove therein. The electronic device is mounted on one surface of the substrate. The lead frame is bonded to the substrate and electrically connected to the electronic device. The molded portion seals the lead frame and the electronic device and includes at least one through hole extending the indented portion.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: April 5, 2016
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Jun Woo Myung, Sung Min Song
  • Patent number: 9297831
    Abstract: A touch sensor capable of specifying a touch position and/or a degree of a touch pressure by using graphene as an electrode and/or a strain gauge, and more particular, a touch sensor capable of simultaneously detecting a pressure and a position by means of change in resistance by using graphene is provided.
    Type: Grant
    Filed: December 23, 2011
    Date of Patent: March 29, 2016
    Assignee: Graphene Square, Inc.
    Inventors: Jong-Hyun Ahn, Byung Hee Hong, Young Bin Lee, Su Kang Bae, Hyeong Keun Kim
  • Patent number: 9289137
    Abstract: An intravascular pressure sensor assembly is disclosed herein that is produced in part using photolithography and DRIE solid-state device production processes. Using DRIE production processes facilitates a number of features that could not be readily incorporated in sensor chips fabricated using mechanical saws. In accordance with a first feature, sensor chips are created with non-rectangular outlines. The sensor chip includes a widened portion that substantially abuts an inner wall of a sensor housing, and a cantilevered portion that is relatively narrow in relation to the widened portion. The non-rectangular outline of the sensor chip is formed using photolithography in combination with DRIE processing. In accordance with another feature, the sensor chip is positioned width-wise in the housing, thereby reducing a required length for the housing.
    Type: Grant
    Filed: September 28, 2007
    Date of Patent: March 22, 2016
    Assignee: Volcano Corporation
    Inventor: Paul Douglas Corl
  • Patent number: 9291516
    Abstract: Systems and methods for an internally switched multiple range transducer are provided. In one embodiment, a method comprises receiving, at a first sensor, a pressure, wherein the first sensor is associated with a first pressure range; measuring, at the first sensor, the pressure to generate a first pressure signal; in response to determining that the first pressure signal is not associated with the first pressure range, activating a second sensor, wherein the second sensor is associated with a second pressure range that is different from the first pressure range; and measuring, at the second sensor, the pressure to generate a second pressure signal.
    Type: Grant
    Filed: December 2, 2013
    Date of Patent: March 22, 2016
    Assignee: Kulite Semiconductor Products, Inc.
    Inventors: Anthony D. Kurtz, Louis DeRosa
  • Patent number: 9275949
    Abstract: Provided is a semiconductor device in which a semiconductor element mounted on a wiring substrate is placed in a hollow portion, the hollow portion being formed by the wiring substrate, a protective member, and a wall member, with the wiring substrate, the protective member, and the wall member being a bottom surface, a top surface, and side surfaces thereof, respectively. The wall member has a vent hole provided therein, which communicates the hollow portion to/from the outside, and the vent hole includes a pillar member formed of a material having a linear expansion coefficient which is smaller than that of the wall member. Therefore, airtightness of the hollow portion is maintained to prevent entry of foreign matters at ordinary temperature, and vapor pressure in the hollow portion is relieved when heated.
    Type: Grant
    Filed: May 29, 2012
    Date of Patent: March 1, 2016
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Yuya Okada
  • Patent number: 9228929
    Abstract: The present invention provides a method of on-line rapid fluid density measurement using a piezoresistive micro-cantilever, the present invention can achieve on-line measurement without changing the existing device; more importantly, without acquiring the resonant frequency of the cantilever in fluid to be detected, thus remarkably reducing measurement time, and guaranteeing the real on-line rapid measurement. By using the method of the present invention, measurement of the density of fluid to be detected by a calibrated piezoresistive micro-cantilever may be achieved within seconds or even shorter.
    Type: Grant
    Filed: October 23, 2012
    Date of Patent: January 5, 2016
    Assignee: XI'AN JIAOTONG UNIVERSITY
    Inventors: Zhuangde Jiang, Guiming Zhang, Libo Zhao, Enze Huang, Longqi Xu, Yulong Zhao, Xiaopo Wang, Bo Song, Zhigang Liu
  • Patent number: 9222814
    Abstract: Technique of suppressing performance variations for each flow sensor is provided. In a flow sensor FS1 of the present invention, apart of a semiconductor chip CHP1 is configured to be covered with resin (MR) in a state in which a flow sensing unit (FDU) formed on a semiconductor chip CHP1 is exposed. Since an upper surface SUR(MR) of the resin (MR) is higher than an upper surface SUR(CHP) of the semiconductor chip (CHP1) by sealing the resin (MR) on a part of the upper surface SUR(CHP) of the semiconductor chip CHP1 in a direction parallel to an air flow direction, the air flow around the flow sensing unit (FDU) can be stabilized. Further, interface peeling between the semiconductor chip (CHP1) and the resin (MR) can be prevented by an increase of contact area between the semiconductor chip (CHP1) and the resin (MR).
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: December 29, 2015
    Assignee: Hitachi Automotive Systems, Ltd.
    Inventors: Tsutomu Kono, Keiji Hanzawa, Takeshi Morino, Yuki Okamoto, Noboru Tokuyasu, Shinobu Tashiro
  • Patent number: 9105752
    Abstract: There is disclosed a high temperature pressure sensing system which includes a SOI, silicon carbide, or gallium nitride Wheatstone bridge including piezoresistors. The bridge provides an output which is applied to an analog to digital converter also fabricated using SOI, silicon carbide, or gallium nitride materials. The output of the analog to digital converter is applied to microprocessor, which microprocessor processes the data or output of the bridge to produce a digital output indicative of bridge value. The microprocessor also receives an output from another analog to digital converter indicative of the temperature of the bridge as monitored by a span resistor coupled to the bridge. The microprocessor has a separate memory coupled thereto which is also fabricated from SOI, silicon carbide, or gallium nitride materials and which memory stores various data indicative of the microprocessor also enabling the microprocessor test and system test to be performed.
    Type: Grant
    Filed: September 21, 2012
    Date of Patent: August 11, 2015
    Assignee: Kulite Semiconductor Products, Inc.
    Inventors: Anthony D. Kurtz, Wolf S. Landmann, Joseph R. VanDeWeert, Alexander A. Ned
  • Patent number: 9086006
    Abstract: A valve device for an internal combustion engine includes a drive unit. A drive housing in which the drive unit is arranged. A valve unit is configured to be moved by the drive unit. The valve unit comprises a valve rod and a valve closure member. A flow housing comprises a fluid inlet channel and a fluid outlet channel. A connection cross section of the fluid inlet channel and the fluid outlet channel is configured to be controlled by the valve closure member. A pressure detection chamber is fluidically connected with the fluid inlet channel. A pressure sensor is arranged in the pressure detection chamber and is integrated in the drive housing. The pressure sensor comprises a pressure detection surface arranged in a plane. A normal of the pressure detection surface is arranged so as to be perpendicular to a direction of a fluid flow into the pressure detection chamber.
    Type: Grant
    Filed: November 26, 2010
    Date of Patent: July 21, 2015
    Assignee: PIERBURG GMBH
    Inventors: Berthold Herrmann, Holger Paffrath, Peter Burgfels
  • Patent number: 9078570
    Abstract: A pressure sensor and pressure-sensing catheter in which a deformable pressure sensing membrane is separated from an inner metalized surface on a rigid support by an air gap. An input allows a voltage to be applied to an electrode on the sensing membrane and an output allows reading of the signal modulation from the support surface. An outer sleeve overlays the membrane and a wire bus transmits the signals to a terminal connector. The catheter may include a vented air gap, a multiplexing wire bus, and an internal cable to maintain tension.
    Type: Grant
    Filed: October 8, 2004
    Date of Patent: July 14, 2015
    Inventors: Thomas R. Parks, Jae S. Son
  • Patent number: 9046436
    Abstract: A sensor unit has at least one measuring cell and a circuit mount arranged in a protective sleeve. The measuring cell detects a pressure of a hydraulic block. The circuit mount has a printed circuit board, which is positioned perpendicularly relative to the measuring cell. The printed circuit board has an electronic circuit with at least one electronic and/or electrical component. The measuring cell has at least one connection point configured to tap off at least one electrical output signal from the measuring cell. The circuit mount forms an internal interface which taps off the at least one electrical output signal from the measuring cell and applies it to the electronic circuit. An output signal from the electronic circuit can be tapped off by an external interface. The internal interface is formed at a first end and the external interface is formed at a second end of the protective sleeve.
    Type: Grant
    Filed: March 25, 2013
    Date of Patent: June 2, 2015
    Assignee: Robert Bosch GmbH
    Inventors: Michael Schlitzkus, Stefan Lehenberger, Robert Hengler, Dmitriy Aranovich, Philip Martin Lenk, Peter Diesel, Christian Pfleger
  • Patent number: 9046449
    Abstract: A measurement device for measurement of forces in structural components, having a measurement sensor, which is embodied such that it is connected with the structural component in a force-fit and/or form-fit manner, and generates measurement signals as a function of force transfers in the structural component, the measurement device having a measurement casing upon the measurement sensor. Processing of received measurement signals can occur, and the measurement casing has connecting means, for placing in position and releasable attachment of the measurement casing on the structural component, and the contacting means of the measurement casing can establish contact with the measurement sensor for the reception of the measurement signals.
    Type: Grant
    Filed: December 21, 2012
    Date of Patent: June 2, 2015
    Assignee: Airbus Operations GmbH
    Inventors: Martin Kluge, Fabian Sedlmeier, Thomas Becker
  • Patent number: 9046428
    Abstract: A pressure detection module of a pressure sensor device includes a receptacle part for receiving a carrier substrate. The carrier substrate is located on a first side with a pressure detection unit, and is inserted into the receptacle part with a second side facing away from the first side. The carrier substrate is fixed with its second side on a base of a receptacle groove. In order to construct the pressure detection module as small as possible, and to manufacture it in a cost-effective way, the receptacle part, the receptacle groove and a peripheral flange around the receptacle groove are, for example, provided with a plate-shaped design. The base has a contacting opening, through which contact surfaces of the carrier substrate, which are exposed at the contacting opening, are electrically contactable.
    Type: Grant
    Filed: June 25, 2013
    Date of Patent: June 2, 2015
    Assignee: ROBERT BOSCH GMBH
    Inventors: Masoud Habibi, Markus Reinhard
  • Publication number: 20150135854
    Abstract: A pressure sensing element includes a sensing sub-element disposed on a diaphragm, the element including a shield disposed over the sub-element and configured to substantially eliminate influence of external charge on the sub-element during operation. A method of fabrication and a pressure sensor making use of the pressure sensing element are disclosed.
    Type: Application
    Filed: November 12, 2014
    Publication date: May 21, 2015
    Inventors: Mark P. McNeal, Douglas B. Strott, Stephen P. Greene
  • Patent number: 9021885
    Abstract: A pressure sensor chip includes a sensor diaphragm that outputs a signal in accordance with a pressure differential, and first and second holding members that face, on peripheral edge portions thereof, one face and another face of a sensor diaphragm, and are in contact therewith. In the peripheral edge portion of the first holding member, in a region that faces the one face of the sensor diaphragm, a region on an outer peripheral side is a region that is bonded to the one face of the sensor diaphragm, and a region on an inner peripheral side is a region that is not bonded to the one face of the sensor diaphragm.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: May 5, 2015
    Assignee: Azbil Corporation
    Inventors: Yuuki Seto, Tomohisa Tokuda
  • Patent number: 8984951
    Abstract: The present invention provides a self-heated pressure sensor assembly and method of utilizing the same. The self-heated pressure sensor assembly regulates and maintains the temperature of the pressure sensor, regardless of the external temperature environment, without an external heater as in prior art embodiments. Exemplary embodiments of the pressure sensor assembly incorporate a resistance heater that is built into the sensing chip of the pressure sensor assembly. The pressure sensor assembly also utilizes the resistance of the pressure sensing elements to monitor the temperature of the assembly, which works alongside the resistance heater to maintain a stable temperature within the pressure sensor assembly.
    Type: Grant
    Filed: September 18, 2012
    Date of Patent: March 24, 2015
    Assignee: Kulite Semiconductor Products, Inc.
    Inventors: Wolf Landmann, Joseph R. VanDeWeert
  • Publication number: 20150068315
    Abstract: A pressure sensor includes a pressure sensing element and a top cap. The pressure sensing element includes a bonded wafer substrate having a buried sealed cavity. A wall of the buried sealed cavity forms a sensing diaphragm. One or more sense elements may be supported by the sensing diaphragm and one or more bond pads are supported by the upper side of the bonded wafer substrate. Each of the bond pads may be positioned adjacent to the sensing diaphragm and electrically connected to one or more of the sense elements. The top cap may be secured to the upper side of the bonded wafer substrate such that an aperture in the top cap facilitates passage of a media in a downward direction to the sensing diaphragm. The top cap may be configured to isolate the bond pads from the media.
    Type: Application
    Filed: September 12, 2013
    Publication date: March 12, 2015
    Applicant: Honeywell International Inc.
    Inventors: RIchard A. Davis, Carl Stewart
  • Publication number: 20150059486
    Abstract: Provided is a pressure sensor including an elastic thin film including a first surface and a second surface that face each other, the elastic thin film including an elastomer material, a plurality of protruding deformable structures patterned on the first surface; a piezoresistive electrode formed along surfaces of the plurality of protruding deformable structures; and a counter electrode disposed to face the piezoresistive electrode.
    Type: Application
    Filed: September 5, 2014
    Publication date: March 5, 2015
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chwee Lin CHOONG, Jongjin PARK, Jihyun BAE, Byoungsun LEE, Jungkyun IM
  • Patent number: 8904876
    Abstract: Flexible force/pressure sensors for producing electrical output signals proportional to forces or pressures exerted on the sensor include a thin, elastically deformable foam pad laminated between a pair of electrically conducive fabric sheets. A piezocapacitive embodiment of the sensor utilizes an elastically deformable perforated open-cell polyurethane foam pad preferably saturated with glycerin to increase the capacitance of the sensor. The piezocapacitive sensor section is preferably stacked onto a piezoresistive section having a second open-cell foam pad containing piezoresistive carbon particles to form a hybrid piezocapacitive/piezoresistive sensor. A third, “leaky dielectric” embodiment of a sensor includes a single open-cell foam pad which contains both a dielectric liquid and conductive particles. A low frequency such as d.c.
    Type: Grant
    Filed: September 29, 2012
    Date of Patent: December 9, 2014
    Assignee: Stryker Corporation
    Inventors: Geoffrey L. Taylor, William L. Chapin
  • Publication number: 20140260644
    Abstract: The present invention relates to a modular system for sensing pressure and/or temperature. The system uses a piezoresistive transducer that contacts a fluid, a transducer housing for the piezoresistive transducer, a conductor tube, a transition housing, a cable, an adapter housing, a flex conductor, an electronic housing, wherein the transducer housing, the conductor tube, the transition housing, the cable, the adapter housing, the flex conductor, and the electronic housing protect a conductive path for electrical signal(s) from the piezoresistive transducer to the electronic housing. The system may use cable to couple the transition housing to the adapter housing sufficient in length to keep the transducer at the site of interest and the more sensitive electronic circuits away from high pressure, temperature, and/or RF/EMI environments such as that associated with down-hole drilling. In another embodiment, some or all the conductive path is multilayered wire.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicant: Sensonetics, Inc.
    Inventor: Mark Russell Sahagen
  • Patent number: 8800377
    Abstract: A contact force sensor package includes a substrate layer having a vibration detection unit and a pair of first junction pads that are electrical connection ports which are provided on an upper surface of the substrate layer, a flexible circuit substrate layer having a pair of second junction pads provided at a position corresponding to the first junction pads and electrically connected to the first junction pad, a vibration transfer unit having one side contacting the vibration detection unit and the other side contacting a human body and transferring a sphygmus wave of the human body to the vibration detection unit, and an adhesion layer formed between the substrate layer and the flexible circuit substrate layer to reinforce a junction force between the substrate layer and the flexible circuit substrate layer, the adhesion layer being not formed in an area overlapping at least the vibration transfer unit.
    Type: Grant
    Filed: March 26, 2008
    Date of Patent: August 12, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Jong-pal Kim
  • Publication number: 20140216163
    Abstract: A pressure sensor (1) is specified, comprising a housing (2), a membrane (3), which forms with the housing (2) a chamber (4) closed off toward the outside, and a filling opening (6) for filling the chamber (4) with a fluid medium (5). The filling opening (6) is closed by means of a soldering or welding closure (7, 8). Furthermore, a method for producing a pressure sensor (1) is specified, wherein a housing (2), which together with a membrane (3) forms a chamber (4), is provided, the chamber (4) is filled with a fluid medium (5) through a filling opening (6), and the filling opening (6) is subsequently closed by means of soldering or welding.
    Type: Application
    Filed: May 10, 2012
    Publication date: August 7, 2014
    Applicant: EPCOS AG
    Inventors: Peter Thiele, Christian Wohlgemuth
  • Publication number: 20140165735
    Abstract: Exemplary embodiments of the present invention provide a differential pressure transducer that comprises first and second diaphragms of different configurations, i.e., different diameters and/or thicknesses. The pressure transducer provides more versatility over prior art designs as the diaphragms can be of different configurations yet still maintain substantially similar back pressures. Therefore, the errors commonly associated with back pressures are eliminated because the back pressures from the diaphragms ultimately cancel out in the sensor's differential pressure measurement.
    Type: Application
    Filed: December 19, 2012
    Publication date: June 19, 2014
    Applicant: KULITE SEMICONDUCTOR PRODUCTS, INC.
    Inventors: Anthony D. Kurtz, Lou DeRosa, Robert Gardner
  • Patent number: 8752433
    Abstract: A process variable transmitter for measuring a pressure of a process fluid includes a first inlet configured to couple to a first process pressure and a second inlet configured to couple to a second process pressure. A differential pressure sensor couples to the first and second inlets and provides an output related to a differential pressure between the first pressure and the second pressure. A first pressure sensor couples to the first inlet and provides an output related to the first pressure. Transmitter circuitry provides a transmitter output based upon the output from the differential pressure sensor and further provides enhanced functionality based upon the output from the first pressure sensor.
    Type: Grant
    Filed: June 19, 2012
    Date of Patent: June 17, 2014
    Assignee: Rosemount Inc.
    Inventor: Robert C. Hedtke
  • Publication number: 20140137654
    Abstract: Disclosed is a measuring device for measuring a physical quantity. The physical quantity could be a pressure and/or a force. The measuring device comprises a circular sensing structure comprising a membrane section which is deflected by force variations acting on the circular sensing structure. A first and second strain gauge are attached to the membrane section. The first strain gauge is configured to measure radial strain in a first surface area of the membrane section. The second strain gauge is configured to measure tangential strain in a second surface area of the membrane section. An increase in force acting on the sensing structure results in shrinking of the first surface area measured by the first strain gauge and stretching of the second surface area measured by the second strain gauge.
    Type: Application
    Filed: November 19, 2013
    Publication date: May 22, 2014
    Inventors: Robert Zwijze, Siebe Berveling, Serge Groenhuijzen, Werner Kleissen
  • Publication number: 20140123765
    Abstract: This disclosure provides example methods, devices and systems associated with flat covered leadless pressure sensor assemblies suitable for operation in extreme environments. In one embodiment, a system may comprise a semiconductor substrate having a first side and a second side; a diaphragm disposed on the first side of the semiconductor substrate; a first cover coupled to the first side of the semiconductor substrate such that it overlays at least the diaphragm, wherein a pressure applied at the first cover is transferred to the diaphragm; and a sensing element disposed on the second side of the semiconductor substrate, wherein the sensing element is used to measure the pressure.
    Type: Application
    Filed: January 9, 2014
    Publication date: May 8, 2014
    Applicant: Kulite Semiconductor Products, Inc.
    Inventors: Alexander A. Ned, Joseph R. VanDeWeert, Leo Geras
  • Patent number: 8714021
    Abstract: A catheter die is provided and includes a device layer defining a cavity and including a piezoresistive pressure sensor operably disposed proximate to the cavity and an insulator having an opening and being disposed on an upper surface of the device layer such that a portion of the piezoresistive pressure sensor is exposed through the opening. The catheter die further includes an insulation layer bonded to a lower surface of the device layer and first and second bond pads, the first bond pad being electrically coupled to the portion of the piezoresistive pressure sensor via the opening and the second bond pad being disposed on the insulation layer.
    Type: Grant
    Filed: February 27, 2012
    Date of Patent: May 6, 2014
    Assignee: Amphenol Thermometrics, Inc.
    Inventor: Sisira Kankanam Gamage
  • Patent number: 8695433
    Abstract: A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a <100> direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a <110> direction.
    Type: Grant
    Filed: January 4, 2013
    Date of Patent: April 15, 2014
    Assignee: Hitachi, Ltd.
    Inventors: Hiromi Shimazu, Hiroyuki Ohta, Yohei Tanno
  • Publication number: 20140090477
    Abstract: Systems and methods for an internally switched multiple range transducer are provided. In one embodiment, a method comprises receiving, at a first sensor, a pressure, wherein the first sensor is associated with a first pressure range; measuring, at the first sensor, the pressure to generate a first pressure signal; in response to determining that the first pressure signal is not associated with the first pressure range, activating a second sensor, wherein the second sensor is associated with a second pressure range that is different from the first pressure range; and measuring, at the second sensor, the pressure to generate a second pressure signal.
    Type: Application
    Filed: December 2, 2013
    Publication date: April 3, 2014
    Applicant: KULITE SEMICONDUCTOR PRODUCTS, INC.
    Inventor: Nora Kurtz
  • Patent number: 8661911
    Abstract: Provided is a piezo-resistive pressure sensor that realizes sensitive and accurate measurement of pressure, by reducing the variation of electrical conduction due to thermal variation in piezo resistance elements, without lowering the sensitivity of measurement. Piezo-resistance sections R1, R2, R3 and R4 are arranged on diaphragm 31, near the border between diaphragm 31 and support section 32. By this means, pressure can be measured with high sensitivity. The area of a part where a group of piezo-resistance elements are placed, and the outer shape of that part, are the same between piezo-resistance sections R1, R2, R3 and R4. By this means, piezo-resistance sections R1, R2, R3 and R4 have uniform temperature distribution and reduce the variation of electrical conduction due to thermal variation in piezo resistance elements.
    Type: Grant
    Filed: June 16, 2011
    Date of Patent: March 4, 2014
    Assignee: Mitsumi Electric, Co., Ltd.
    Inventor: Norikazu Oizumi
  • Publication number: 20140053652
    Abstract: A method, device and system for a gage pressure transducer including the making thereof are provided. In one embodiment, a method comprises receiving, at a first diaphragm, a first pressure, wherein the first diaphragm is composed of metal; transferring, from the first diaphragm, to a first sensor, the first pressure using a first oil region, wherein the first oil region is disposed between the first diaphragm and the first sensor; receiving, at the first sensor, the first pressure; measuring, by the first sensor, the first pressure to generate a first pressure signal; and outputting, from the first sensor, to a first header pin, the first pressure signal, wherein the first header pin is electrically coupled to the first sensor using a first conductive glass frit.
    Type: Application
    Filed: November 1, 2013
    Publication date: February 27, 2014
    Inventor: Nora Kurtz
  • Patent number: 8631708
    Abstract: An absolute piezo-resistive pressure sensor system and method employing multiple pressure sensing elements operating simultaneously to detect pressure. Both pressure sensing elements being subject to a common reference pressure within a sealed cavity. The first pressure sensing element detecting an offset voltage resulting from the progressive release of mechanical stress at an assembly interface between the sensing element and a base plate on which the sensing elements are assembled. Electronic circuitry compensates the pressure measured by the second pressure sensing element based on the offset voltage detected by the first pressure sensing element.
    Type: Grant
    Filed: January 23, 2013
    Date of Patent: January 21, 2014
    Assignee: Codman Neuro Sciences Sárl
    Inventor: Rocco Crivelli
  • Patent number: 8631709
    Abstract: A novel flexible transducer structure is suitable for attaching to curved surface such as the leading edge of an aircraft wing. The structure comprises a thin flexible sheet of an insulating material with a leadless transducer secured to the sheet. The sheet is then placed over the curved surface and assumes the curvature of the surface. The transducer secured to the sheet provides an output of pressure according the pressure exerted on the sheet. The sheet basically is fabricated from a thin material such as Kapton and is flexible so as to assume the curvature of the surface with the transducer being exposed to pressure applied to the curved surface. The sensor in conjunction with the flexible sheet allows pressure to be measured without disturbing the air flow patterns of the measuring surfaces and because of its construction, is moisture resistant over a large variety of atmospheric conditions.
    Type: Grant
    Filed: November 8, 2011
    Date of Patent: January 21, 2014
    Assignee: Kulite Semiconductor Products, Inc.
    Inventors: Scott J. Goodman, Alexander A. Ned