Abstract: A pressure sensor includes a base, a sensor facing the base in a height direction with a space between the sensor and the base to sense pressure applied to a sensing surface on a side opposite to the base in the height direction, a surrounding portion raised in the height direction from the base and surrounding the sensor with a groove extending around the sensor, between the surrounding portion and the sensor, a coupling portion coupling the sensor with the surrounding portion, and a beam in the groove to apply a resistance to the surrounding portion moving toward the sensor.

Abstract: A package structure including a bottom die, a first die, a second die, an encapsulant and a first dummy structure is provided. The first die and a second die are bonded to a first side of the bottom die. The encapsulant laterally encapsulates the first die and the second die. The first dummy structure is bonded to the first side of the bottom die, wherein a sidewall of the first dummy structure is coplanar with a first sidewall of the bottom die.

Abstract: Disclosed are pressure sensors including a die and an application-specific integrated circuit (ASIC) mounted on a top surface of a substrate. The pressure sensor can define an inner volume and a bottom opening configured to abut the substrate. The die and ASIC are mounted on the top surface of the substrate within the inner volume. The substrate defines a first aperture therethrough and the die defines a second aperture therethrough in a direction along an axis perpendicular to the substrate, the first aperture and the second aperture being aligned. Metallic barrier(s) disposed on a bottom surface of the substrate, circumferentially about the first aperture, can be at least partially coated with solder mask to reduce or prevent flow of unwanted materials past the metallic barriers and through the first aperture. The substrate can include electrical connection pads on the bottom surface configured to be in communication with a daughter board.

Abstract: Techniques relating to a micro-electro-mechanical (MEMS) device configured to measure direct axial and shear stress components of a stress tensor are described. The MEMS device includes a first and second circuit configured in a double rosette structure coupled with a third circuit in a standard rosette structure to form a triple rosette piezo-resistive gauge circuit. The first circuit includes at least one piezoresistive element suspended from a substrate, and at least one piezoresistive element fixed to the substrate. The second circuit includes each piezoresistive element fixed to the substrate. The third circuit includes at least one piezoresistive element fixed to the substrate. Additionally, the MEMS device may be coupled to one or more processing systems to determine a mechanical stress tensor that is applied to the MEMS device based on measurements received from the MEMS device.

Abstract: Methods and systems for sensing a force using a sense die are provided. The sense die may include a slab die; an actuation element configured to contact the slab die and apply a force to the slab die; and one or more sense elements supported by the slab die.

Abstract: A package structure and a method of fabricating the same are provided. The method includes bonding a first die and a second die to a wafer in a first die region of the wafer hybrid bonding; bonding a first dummy structure to the wafer in the first die region and a first scribe line of the wafer; and singulating the wafer and the first dummy structure along the first scribe line to form a stacked integrated circuit (IC) structure.

Abstract: Variables of a surgical system are detected or received via one or more sensors to predict an intraocular pressure (IOP) and/or determine an IOP in real time during a surgical procedure. A notification to a surgeon or a target IOP is set and maintained as determined by Static IOP, dynamic IOP, and/or a total IOP combining both static and dynamic IOP of the anterior chamber of a patient's eye. Information collected about various components of the system are displayed on a user interface. The system uses the collected information to calculate the static IOP and/or dynamic IOP of the system, and the total IOP may be function of the static IOP and/or dynamic IOP measurements.

Abstract: A sensor assembly includes a die substrate and a metalized layer formed on the die substrate. The metalized layer is formed of a first metal material and includes a bonding pad to facilitate electrically coupling the sensor assembly to a sensor system. A remetalized bump is formed on the bonding pad of a second metal material and is electrically coupled to the metalized layer. An adhesive is applied to the remetalized bump and facilitates mechanically coupling the sensor assembly to the sensor system.

Abstract: An adapter for a surgical hand piece having a single lumen work tip with an open end and a small lateral hole is designed to convert the work tip to infusion/aspiration (I/A) cleanup of lens epithelial cells after phacoemulsification. The adapter is in the form of a sleeve adapted to be slid over the distal end of the work tip. The sleeve includes at least one aspiration hole located toward the distal end of the sleeve. When the distal end of the sleeve is at a first distance L1 from the distal end of the work tip, aspiration occurs through the aspiration hole of the sleeve and the open end of the work tip. When the distal end of the sleeve is at a second and smaller distance L2 from the open end of the work tip, aspiration through the open end of the work tip is blocked by the sleeve and aspiration occurs through the aspiration hole of the sleeve and the lateral hole in the work tip.

Abstract: A sensor package comprises a sensor chip (3) with a sensitive element (31) exposed to an environment of the sensor package, and contact pads (2) for electrically contacting the sensor package. Electrical connections (5) are applied between the sensor chip (3) and the contact pads (2). A molding compound (1) at least partially encloses the sensor chip (3) and the contact pads (2). A unit (3, 73) consisting of the sensor chip (3) and optionally of a die pad (73) supporting the sensor chip (3) is arranged such that a top surface (ts) of the unit (3, 73) does not protrude from a level defined by a top surface (ts) of the contact pads (2), and a bottom surface (bs) of the unit (3,73) does not protrude from a level defined by a bottom surface (bs) of the contact pads (2).

Abstract: Microelectromechanical transducer comprising a semiconductor body, four cavities buried within the semiconductor body and four membranes, each membrane being suspended over a respective cavity and being capable of being deflected by the action of a pressure external to the microelectromechanical transducer; the microelectromechanical transducer further comprising four transducer elements housed by a respective membrane and electrically coupled to one another in a Wheatstone bridge configuration to convert said external pressure into an electrical signal.

Abstract: Methods of manufacturing a pressure sensor are provided. In preferred embodiments, the method comprises: forming a cavity in a first side of a silicon starting material; depositing a layer of a second material over the cavity; removing a first portion of material above the cavity from a second side of the silicon starting material to expose the second material to the second side to form a diaphragm from the second material and wherein, a second portion of material above the cavity that was not removed from the silicon starting material, forms at least one support structure that spans the diaphragm, wherein the second side is opposite to the first side; and forming at least one piezoresistor in the silicon starting material over an intersection of the support structure and the silicon starting material at an outside edge of the diaphragm on the second side.

Abstract: A pressure sensor includes a diaphragm suspended across a cavity in a substrate. A first group of piezoresistors is provided in the diaphragm, the piezoresistors of the first group being coupled to one another to form a first Wheatstone bridge having first positive and negative output nodes. A second group of piezoresistors is provided in the diaphragm, the piezoresistors of the second group being coupled to one another to form a second Wheatstone bridge having second positive and negative output nodes. The first negative output node of the first Wheatstone bridge is electrically connected to the second positive output node of the second Wheatstone bridge to directly chain the outputs of the Wheatstone bridges. The first and second Wheatstone bridges each produce an output signal as a function of an external pressure stimulus that is combined via the chained arrangement of the Wheatstone bridges to produce a composite output signal.

Abstract: Provided are a dynamic quantity measuring device having higher accuracy and longer-term reliability than in the prior art, and a pressure sensor using the same. A dynamic quantity measuring device is provided with a first Wheatstone bridge configured by an impurity diffused resistor on a principal surface of one semiconductor substrate, and detects a difference between strain quantities respectively generated in an x-axis direction and a y-axis direction that are orthogonal to each other on the principal surface of the semiconductor substrate by the first Wheatstone bridge, the dynamic quantity measuring device being provided with, on the principal surface of the semiconductor substrate, a second Wheatstone bridge for detecting the strain quantity in the x-axis direction, and a third Wheatstone bridge for detecting the strain quantity in the y-axis direction.

Abstract: A physical quantity sensor includes a first sensor element, and an outer edge portion arranged in at least part of the outer periphery of the first sensor element, and a first groove extending in a first direction provided in the outer edge portion in a plan view of the outer edge portion.

Abstract: A pressure sensor includes a sensor body with a sensor chamber in the interior, at least a first separating membrane, forming a first separating membrane chamber connected with the sensor body. A measuring membrane divides the sensor chamber into two chamber portions. A pressure transfer liquid, with which the first separating membrane chamber, the first chamber portion and a channel therebetween are filled, in order to transfer a pressure to the measuring membrane; wherein the pressure sensor is specified for a temperature range between a minimum temperature and a maximum temperature, as well as for a pressure range.

Abstract: A semiconductor sensor assembly for use in a corrosive environment comprises a processing device comprising at least one first bondpad of a material which may be corroded by a corrosive component in a corrosive environment; a sensor device comprising at least one second bondpad consisting of and/or being covered by a first corrosion resistant material; at least one bonding wire for making a signal connection between the at least one first bondpad of the processing device and the second bondpad of the sensor device. The processing device is partially overmoulded by a second corrosion resistant material, and is partially exposed to a cavity in the corrosion resistant material, with the sensor device being present in the cavity. A redistribution layer is provided to enable signal connection between the processing device and the sensor device is physically made in the cavity while the second corrosion resistant material covers the first bondpad.

Abstract: The voltage output span and sensitivity from a MEMS pressure sensor are increased and pressure nonlinearity is reduced by thinning a diaphragm and forming the diaphragm to include anchors that are not connected to or joined to diaphragm-stiffening beams or thickened regions of the diaphragm.

Abstract: A pressure sensor is for positioning within a structure. The pressure sensor may include a pressure sensor integrated circuit (IC) having a pressure sensor circuit responsive to bending, and a transceiver circuit coupled to the pressure sensor circuit. The pressure sensor may include a support body having a recess therein coupled to the pressure sensor IC so that the pressure sensor IC bends into the recess when the pressure sensor IC is subjected to external pressure.

Abstract: A pressure sensor with double measuring scale includes: a flexible body designed to undergo deflection as a function of a the pressure; piezoresistive transducers for detecting the deflection; a first focusing region designed to concentrate, during a first operating condition, a first value of the pressure in a first portion of the flexible body so as to generate a deflection of the first portion of the flexible body; and a second focusing region designed to concentrate, during a second operating condition, a second value of said pressure in a second portion of the flexible body so as to generate a deflection of the second portion of the flexible body. The piezoresistive transducers correlate the deflection of the first portion of the flexible body to the first pressure value and the deflection of the second portion of the flexible body to the second pressure value.

Abstract: A device comprises a silicon-on-insulator (SOI) substrate having first and second silicon layers with an insulator layer interposed between them. A structural layer, having a first conductivity type, is formed on the first silicon layer. A well region, having a second conductivity type opposite from the first conductivity type, is formed in the structural layer, and resistors are diffused in the well region. A metallization structure is formed over the well region and the resistors. A first cavity extends through the metallization structure overlying the well region and a second cavity extends through the second silicon layer, with the second cavity stopping at one of the first silicon layer and the insulator layer. The well region interposed between the first and second cavities defines a diaphragm of a pressure sensor. An integrated circuit and the pressure sensor can be fabricated concurrently on the SOI substrate using a CMOS fabrication process.

Abstract: A sensor includes a sensor element; a circuit board having an element attachment surface on which the sensor element is mounted; a casing member for housing the circuit board, the casing member having a measurement chamber which faces the sensor element and communicates with the target atmosphere through a gas inlet; an annular elastic seal member which is interposed between the element attachment surface and the casing member in such a manner that the elastic seal member is in contact with the element attachment surface. The elastic seal member is made of foamed rubber and has an end surface flat portion which faces the casing member and another end surface flat portion which faces the element attachment. The elastic seal member is interposed between the element attachment surface and the casing member such that the elastic seal member is compressed between the flat portions of the end surfaces.

Abstract: A semiconductor-based multi-sensor module integrates miniature temperature, pressure, and humidity sensors onto a single substrate. Pressure and humidity sensors can be implemented as capacitive thin film sensors, while the temperature sensor is implemented as a precision miniature Wheatstone bridge. Such multi-sensor modules can be used as building blocks in application-specific integrated circuits (ASICs). Furthermore, the multi-sensor module can be built on top of existing circuitry that can be used to process signals from the sensors. An integrated multi-sensor module that uses differential sensors can measure a variety of localized ambient environmental conditions substantially simultaneously, and with a high level of precision. The multi-sensor module also features an integrated heater that can be used to calibrate or to adjust the sensors, either automatically or as needed.

Abstract: An integrated MEMS device is provided. The integrated MEMS device comprises a circuit chip and a device chip. The circuit chip has a patterned first bonding layer disposed thereon, the bonding layer being composed of a conductive material/materials. The device chip has a first structural layer and a second structural layer, the first structural layer being connected to the second structural layer and the first bonding layer of the circuit chip, and being sandwiched between the second structural layer and the circuit chip. A plurality of hermetic spaces are enclosed by the first structural layer, the second structural layer, the first bonding layer and the circuit chip.

Abstract: The voltages output from a low-pressure MEMS sensor are increased by increasing the sensitivity of the sensor. Sensitivity is increased by thinning the diaphragm of the low pressure sensor device with corner trench. Nonlinearity increased by thinning the diaphragm is reduced by simultaneously creating a cross stiffener to the bottom side of the diaphragm. A rim, anchors, and a stiffener pad can also be added to further stiffen the thinner diaphragm and further reduce pressure nonlinearity.

Abstract: Described herein are ruggedized wafer level MEMS force dies composed of a platform and a silicon sensor. The silicon sensor employs multiple flexible sensing elements containing Piezoresistive strain gages and wire bonds.

Abstract: A sensor arrangement for sensing an environmental property of an environment of the sensor arrangement, the sensor arrangement comprising: a carrier; an active sensor component arranged at the carrier and configured for providing a sensor signal being indicative of the environmental property; a molding structure encapsulating at least a part of an exterior surface of the carrier and comprising an access recess exposing the active sensor component with regard to the environment; wherein the access recess is arranged asymmetrically with regard to the carrier.

Abstract: The various technologies presented herein relate to a sensor for measurement of high forces and/or high load shock rate(s), whereby the sensor utilizes silicon as the sensing element. A plate of Si can have a thinned region formed therein on which can be formed a number of traces operating as a Wheatstone bridge. The brittle Si can be incorporated into a layered structure comprising ductile and/or compliant materials. The sensor can have a washer-like configuration which can be incorporated into a nut and bolt configuration, whereby tightening of the nut and bolt can facilitate application of a compressive preload upon the sensor. Upon application of an impact load on the bolt, the compressive load on the sensor can be reduced (e.g., moves towards zero-load), however the magnitude of the preload can be such that the load on the sensor does not translate to tensile stress being applied to the sensor.

Abstract: A semiconductor package includes a substrate, at least one electronic device, a lead frame, and a molded portion. The substrate has at least one indented portion formed as a groove therein. The electronic device is mounted on one surface of the substrate. The lead frame is bonded to the substrate and electrically connected to the electronic device. The molded portion seals the lead frame and the electronic device and includes at least one through hole extending the indented portion.

Abstract: A touch sensor capable of specifying a touch position and/or a degree of a touch pressure by using graphene as an electrode and/or a strain gauge, and more particular, a touch sensor capable of simultaneously detecting a pressure and a position by means of change in resistance by using graphene is provided.

Abstract: An intravascular pressure sensor assembly is disclosed herein that is produced in part using photolithography and DRIE solid-state device production processes. Using DRIE production processes facilitates a number of features that could not be readily incorporated in sensor chips fabricated using mechanical saws. In accordance with a first feature, sensor chips are created with non-rectangular outlines. The sensor chip includes a widened portion that substantially abuts an inner wall of a sensor housing, and a cantilevered portion that is relatively narrow in relation to the widened portion. The non-rectangular outline of the sensor chip is formed using photolithography in combination with DRIE processing. In accordance with another feature, the sensor chip is positioned width-wise in the housing, thereby reducing a required length for the housing.

Abstract: Systems and methods for an internally switched multiple range transducer are provided. In one embodiment, a method comprises receiving, at a first sensor, a pressure, wherein the first sensor is associated with a first pressure range; measuring, at the first sensor, the pressure to generate a first pressure signal; in response to determining that the first pressure signal is not associated with the first pressure range, activating a second sensor, wherein the second sensor is associated with a second pressure range that is different from the first pressure range; and measuring, at the second sensor, the pressure to generate a second pressure signal.

Abstract: Provided is a semiconductor device in which a semiconductor element mounted on a wiring substrate is placed in a hollow portion, the hollow portion being formed by the wiring substrate, a protective member, and a wall member, with the wiring substrate, the protective member, and the wall member being a bottom surface, a top surface, and side surfaces thereof, respectively. The wall member has a vent hole provided therein, which communicates the hollow portion to/from the outside, and the vent hole includes a pillar member formed of a material having a linear expansion coefficient which is smaller than that of the wall member. Therefore, airtightness of the hollow portion is maintained to prevent entry of foreign matters at ordinary temperature, and vapor pressure in the hollow portion is relieved when heated.

Abstract: The present invention provides a method of on-line rapid fluid density measurement using a piezoresistive micro-cantilever, the present invention can achieve on-line measurement without changing the existing device; more importantly, without acquiring the resonant frequency of the cantilever in fluid to be detected, thus remarkably reducing measurement time, and guaranteeing the real on-line rapid measurement. By using the method of the present invention, measurement of the density of fluid to be detected by a calibrated piezoresistive micro-cantilever may be achieved within seconds or even shorter.

Abstract: Technique of suppressing performance variations for each flow sensor is provided. In a flow sensor FS1 of the present invention, apart of a semiconductor chip CHP1 is configured to be covered with resin (MR) in a state in which a flow sensing unit (FDU) formed on a semiconductor chip CHP1 is exposed. Since an upper surface SUR(MR) of the resin (MR) is higher than an upper surface SUR(CHP) of the semiconductor chip (CHP1) by sealing the resin (MR) on a part of the upper surface SUR(CHP) of the semiconductor chip CHP1 in a direction parallel to an air flow direction, the air flow around the flow sensing unit (FDU) can be stabilized. Further, interface peeling between the semiconductor chip (CHP1) and the resin (MR) can be prevented by an increase of contact area between the semiconductor chip (CHP1) and the resin (MR).

Abstract: There is disclosed a high temperature pressure sensing system which includes a SOI, silicon carbide, or gallium nitride Wheatstone bridge including piezoresistors. The bridge provides an output which is applied to an analog to digital converter also fabricated using SOI, silicon carbide, or gallium nitride materials. The output of the analog to digital converter is applied to microprocessor, which microprocessor processes the data or output of the bridge to produce a digital output indicative of bridge value. The microprocessor also receives an output from another analog to digital converter indicative of the temperature of the bridge as monitored by a span resistor coupled to the bridge. The microprocessor has a separate memory coupled thereto which is also fabricated from SOI, silicon carbide, or gallium nitride materials and which memory stores various data indicative of the microprocessor also enabling the microprocessor test and system test to be performed.

Abstract: A valve device for an internal combustion engine includes a drive unit. A drive housing in which the drive unit is arranged. A valve unit is configured to be moved by the drive unit. The valve unit comprises a valve rod and a valve closure member. A flow housing comprises a fluid inlet channel and a fluid outlet channel. A connection cross section of the fluid inlet channel and the fluid outlet channel is configured to be controlled by the valve closure member. A pressure detection chamber is fluidically connected with the fluid inlet channel. A pressure sensor is arranged in the pressure detection chamber and is integrated in the drive housing. The pressure sensor comprises a pressure detection surface arranged in a plane. A normal of the pressure detection surface is arranged so as to be perpendicular to a direction of a fluid flow into the pressure detection chamber.

Abstract: A pressure sensor and pressure-sensing catheter in which a deformable pressure sensing membrane is separated from an inner metalized surface on a rigid support by an air gap. An input allows a voltage to be applied to an electrode on the sensing membrane and an output allows reading of the signal modulation from the support surface. An outer sleeve overlays the membrane and a wire bus transmits the signals to a terminal connector. The catheter may include a vented air gap, a multiplexing wire bus, and an internal cable to maintain tension.

Abstract: A sensor unit has at least one measuring cell and a circuit mount arranged in a protective sleeve. The measuring cell detects a pressure of a hydraulic block. The circuit mount has a printed circuit board, which is positioned perpendicularly relative to the measuring cell. The printed circuit board has an electronic circuit with at least one electronic and/or electrical component. The measuring cell has at least one connection point configured to tap off at least one electrical output signal from the measuring cell. The circuit mount forms an internal interface which taps off the at least one electrical output signal from the measuring cell and applies it to the electronic circuit. An output signal from the electronic circuit can be tapped off by an external interface. The internal interface is formed at a first end and the external interface is formed at a second end of the protective sleeve.

Abstract: A pressure detection module of a pressure sensor device includes a receptacle part for receiving a carrier substrate. The carrier substrate is located on a first side with a pressure detection unit, and is inserted into the receptacle part with a second side facing away from the first side. The carrier substrate is fixed with its second side on a base of a receptacle groove. In order to construct the pressure detection module as small as possible, and to manufacture it in a cost-effective way, the receptacle part, the receptacle groove and a peripheral flange around the receptacle groove are, for example, provided with a plate-shaped design. The base has a contacting opening, through which contact surfaces of the carrier substrate, which are exposed at the contacting opening, are electrically contactable.

Abstract: A measurement device for measurement of forces in structural components, having a measurement sensor, which is embodied such that it is connected with the structural component in a force-fit and/or form-fit manner, and generates measurement signals as a function of force transfers in the structural component, the measurement device having a measurement casing upon the measurement sensor. Processing of received measurement signals can occur, and the measurement casing has connecting means, for placing in position and releasable attachment of the measurement casing on the structural component, and the contacting means of the measurement casing can establish contact with the measurement sensor for the reception of the measurement signals.

Abstract: A pressure sensing element includes a sensing sub-element disposed on a diaphragm, the element including a shield disposed over the sub-element and configured to substantially eliminate influence of external charge on the sub-element during operation. A method of fabrication and a pressure sensor making use of the pressure sensing element are disclosed.

Abstract: A pressure sensor chip includes a sensor diaphragm that outputs a signal in accordance with a pressure differential, and first and second holding members that face, on peripheral edge portions thereof, one face and another face of a sensor diaphragm, and are in contact therewith. In the peripheral edge portion of the first holding member, in a region that faces the one face of the sensor diaphragm, a region on an outer peripheral side is a region that is bonded to the one face of the sensor diaphragm, and a region on an inner peripheral side is a region that is not bonded to the one face of the sensor diaphragm.

Abstract: The present invention provides a self-heated pressure sensor assembly and method of utilizing the same. The self-heated pressure sensor assembly regulates and maintains the temperature of the pressure sensor, regardless of the external temperature environment, without an external heater as in prior art embodiments. Exemplary embodiments of the pressure sensor assembly incorporate a resistance heater that is built into the sensing chip of the pressure sensor assembly. The pressure sensor assembly also utilizes the resistance of the pressure sensing elements to monitor the temperature of the assembly, which works alongside the resistance heater to maintain a stable temperature within the pressure sensor assembly.

Abstract: A pressure sensor includes a pressure sensing element and a top cap. The pressure sensing element includes a bonded wafer substrate having a buried sealed cavity. A wall of the buried sealed cavity forms a sensing diaphragm. One or more sense elements may be supported by the sensing diaphragm and one or more bond pads are supported by the upper side of the bonded wafer substrate. Each of the bond pads may be positioned adjacent to the sensing diaphragm and electrically connected to one or more of the sense elements. The top cap may be secured to the upper side of the bonded wafer substrate such that an aperture in the top cap facilitates passage of a media in a downward direction to the sensing diaphragm. The top cap may be configured to isolate the bond pads from the media.

Abstract: Provided is a pressure sensor including an elastic thin film including a first surface and a second surface that face each other, the elastic thin film including an elastomer material, a plurality of protruding deformable structures patterned on the first surface; a piezoresistive electrode formed along surfaces of the plurality of protruding deformable structures; and a counter electrode disposed to face the piezoresistive electrode.

Abstract: Flexible force/pressure sensors for producing electrical output signals proportional to forces or pressures exerted on the sensor include a thin, elastically deformable foam pad laminated between a pair of electrically conducive fabric sheets. A piezocapacitive embodiment of the sensor utilizes an elastically deformable perforated open-cell polyurethane foam pad preferably saturated with glycerin to increase the capacitance of the sensor. The piezocapacitive sensor section is preferably stacked onto a piezoresistive section having a second open-cell foam pad containing piezoresistive carbon particles to form a hybrid piezocapacitive/piezoresistive sensor. A third, “leaky dielectric” embodiment of a sensor includes a single open-cell foam pad which contains both a dielectric liquid and conductive particles. A low frequency such as d.c.

Abstract: The present invention relates to a modular system for sensing pressure and/or temperature. The system uses a piezoresistive transducer that contacts a fluid, a transducer housing for the piezoresistive transducer, a conductor tube, a transition housing, a cable, an adapter housing, a flex conductor, an electronic housing, wherein the transducer housing, the conductor tube, the transition housing, the cable, the adapter housing, the flex conductor, and the electronic housing protect a conductive path for electrical signal(s) from the piezoresistive transducer to the electronic housing. The system may use cable to couple the transition housing to the adapter housing sufficient in length to keep the transducer at the site of interest and the more sensitive electronic circuits away from high pressure, temperature, and/or RF/EMI environments such as that associated with down-hole drilling. In another embodiment, some or all the conductive path is multilayered wire.

Abstract: A contact force sensor package includes a substrate layer having a vibration detection unit and a pair of first junction pads that are electrical connection ports which are provided on an upper surface of the substrate layer, a flexible circuit substrate layer having a pair of second junction pads provided at a position corresponding to the first junction pads and electrically connected to the first junction pad, a vibration transfer unit having one side contacting the vibration detection unit and the other side contacting a human body and transferring a sphygmus wave of the human body to the vibration detection unit, and an adhesion layer formed between the substrate layer and the flexible circuit substrate layer to reinforce a junction force between the substrate layer and the flexible circuit substrate layer, the adhesion layer being not formed in an area overlapping at least the vibration transfer unit.

Abstract: A pressure sensor (1) is specified, comprising a housing (2), a membrane (3), which forms with the housing (2) a chamber (4) closed off toward the outside, and a filling opening (6) for filling the chamber (4) with a fluid medium (5). The filling opening (6) is closed by means of a soldering or welding closure (7, 8). Furthermore, a method for producing a pressure sensor (1) is specified, wherein a housing (2), which together with a membrane (3) forms a chamber (4), is provided, the chamber (4) is filled with a fluid medium (5) through a filling opening (6), and the filling opening (6) is subsequently closed by means of soldering or welding.