Probe Manufacture (epo) Patents (Class 850/60)
  • Patent number: 7954166
    Abstract: An improved method of loading tips and other surfaces with patterning compositions or inks for use in deposition. A method of patterning is described, the method comprising: (i) providing at least one array of tips; (ii) providing a plurality of patterning compositions; (iii) ink jet printing at least some of the patterning compositions onto some of the tips; and (iv) depositing at least some of the patterning compositions onto a substrate surface; wherein the ink jet printing is adapted to prevent substantial cross-contamination of the patterning composition on the tips. Good printing reproducibility and control of printing rate can be achieved. The surfaces subjected to ink jet printing can be treated to encourage localization of the ink at the tip. The method is particularly important for high density arrays.
    Type: Grant
    Filed: August 8, 2008
    Date of Patent: May 31, 2011
    Assignee: Northwestern University
    Inventors: Chad A. Mirkin, Yuhuang Wang, Louise R. Giam, Matthew Park
  • Patent number: 7945966
    Abstract: The invention relates to a nanoprobe comprising a silica fiber (2) with an end opening having a diameter of less than 100 nm, and a metallic sheath (11). The total diameter of the silica part and the metallic sheath (11) is less than 300 nm. The invention also relates to a method for producing one such nanoprobe.
    Type: Grant
    Filed: June 6, 2006
    Date of Patent: May 17, 2011
    Inventors: Tiberiu Minea, Guy Louarn, Guirec Ollivier, Marc Chaigneau
  • Publication number: 20110107472
    Abstract: A sensor for quantitative test electromechanical properties and microstructure of nano-materials and a manufacturing method for the sensor are provided. The sensor comprises a suspended structure, pressure-sensitive resistor cantilevers, support beams, bimetallic strip and other components. When the bimetallic strip produces bending deformation, one of the pressure-sensitive resistor cantilevers is actuated and then stretches the low-dimensional nano-materials which drive the other pressure-sensitive resistor cantilever to bend. Through signal changes are outputted by the Wheatstone bridge, the variable stresses of low-dimensional nano-materials are obtained. Meanwhile, the variable strains of low-dimensional nano-materials are obtained by the horizontal displacements between two cantilevers, so the stress-strain curves of low-dimensional nano-materials are worked out. When the low-dimensional nano-materials are measured in the power state, the voltage-current curves are also obtained.
    Type: Application
    Filed: April 7, 2010
    Publication date: May 5, 2011
    Applicant: BEIJING UNIVERSITY OF TECHNOLOGY
    Inventors: XIAODONG HAN, PAN LIU, YONGHAI YUE, ZE ZHANG
  • Publication number: 20110093987
    Abstract: An electro-thermal actuator which includes a unit cell comprising at least one thermal bimorph, the thermal bimorph comprising at least two materials of different thermal expansion coefficient bonded together, the unit cell having a first end and a second end; and at least one temperature sensor located on the at least one thermal bimorph for measuring a temperature of the at least one thermal bimorph and determining a position of the unit cell. The basic structure can be expanded to 1-D, 2-D and 3-D positioners. The bimorphs can also be coupled to an active yoke which is in turn anchored to a plate, in order to reduce the parasitic heat effects on displacement of the tip of the bimorph.
    Type: Application
    Filed: October 15, 2009
    Publication date: April 21, 2011
    Inventor: Niladri SARKAR
  • Publication number: 20110078835
    Abstract: Embodiments of a process comprising forming one or more micro-electro-mechanical (MEMS) probe on a conductive metal oxide semiconductor (CMOS) wafer, wherein each MEMS probe comprises a cantilever beam with a fixed end and a free end and wherein the CMOS wafer has circuitry thereon; forming an unsharpened tip at or near the free end of each cantilever beam; depositing a silicide-forming material over the tip; annealing the wafer to sharpen the tip; and exposing the sharpened tip.
    Type: Application
    Filed: December 7, 2010
    Publication date: March 31, 2011
    Applicant: INTEL CORPORATION
    Inventor: John Heck
  • Patent number: 7913544
    Abstract: The present invention is directed to scanning probes in which a cantilever contacts a stylus via an integrated stylus base pad, and methods for fabricating such probes. The probe offer many advantages over other types of scanning probes with respect to eliminating the need for a soft, reflective coating in some applications and providing for the simple fabrication of sharp stylus tips, flexibility with respect to functionalizing the tip, and minimal thermal drift due to reduced bimorph effect. The advantage of these features facilitates the acquisition of high resolution images of samples in general, and particularly in liquids.
    Type: Grant
    Filed: November 15, 2007
    Date of Patent: March 29, 2011
    Assignee: Applied NanoStructures, Inc.
    Inventor: Ami Chand
  • Patent number: 7917966
    Abstract: Techniques for fabricating carbon nanotubes aligned on a tip are provided. In one embodiment, a method for fabricating carbon nanotubes aligned on a tip includes forming nanostructures on the tip, and aligning the nanostructures on the tip using a fluid flowing on the tip.
    Type: Grant
    Filed: August 21, 2008
    Date of Patent: March 29, 2011
    Assignee: SNU R&DB Foundation
    Inventors: Yong Hyup Kim, Wal Jun Kim
  • Patent number: 7861316
    Abstract: A microscope probe including a coaxial tip and a coplanar waveguide (CPW) formed on a silicon substrate is provided. The coaxial tip includes a tip shaft and a tip nib formed from the silicon substrate with the tip nib extending from the tip shaft opposite the silicon substrate. The tip shaft includes a first layer of a first conductive material formed over the silicon substrate, a second layer of an insulating material formed over the first layer, and a third layer of a second conductive material formed over the second layer. The tip nib includes the first layer of the first conductive material formed over the silicon substrate and exposed from the second layer and the third layer of the tip shaft. The CPW includes a center conductor formed from the first layer of the first conductive material and a first and a second outer conductor formed from the second layer of the second conductive material.
    Type: Grant
    Filed: December 8, 2006
    Date of Patent: December 28, 2010
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Daniel Warren van der Weide, Yaqiang Wang
  • Patent number: 7854016
    Abstract: A process manufactures a probe intended to interact with a storage medium of a probe-storage system, wherein a sacrificial layer is deposited on top of a substrate; a hole is formed in the sacrificial layer; a mold layer is deposited; the mold layer is etched via the technique for forming spacers so as to form a mold region delimiting an opening having an area decreasing towards the substrate. Then a stack of conductive layers is deposited on top of the sacrificial layer, the stack is etched so as to form a suspended structure, formed by a pair of supporting arms arranged to form a V, and an interaction tip projecting monolithically from the supporting arms. Then a stiffening structure is formed, of insulating material, and the suspended structure is fixed to a supporting wafer. The substrate, the sacrificial layer, and, last, the mold region are then removed.
    Type: Grant
    Filed: December 18, 2007
    Date of Patent: December 14, 2010
    Assignee: STMicroelectronics S.r.l.
    Inventor: Agostino Pirovano
  • Publication number: 20100275335
    Abstract: A method for attaching a conductive particle to the apex of a probe tip comprises the steps of: moving the apex of a probe tip close to a conductive particle and applying a bias voltage between the probe tip and the conductive particle so that the conductive particle can permanently attach to the apex. The method uses only a bias voltage to transfer and attach conductive particles to the apex of a probe tip, and no surface treatment of the probe tip is required.
    Type: Application
    Filed: April 20, 2010
    Publication date: October 28, 2010
    Applicant: NATIONAL TSING HUA UNIVERSITY
    Inventors: FAN GANG TSENG, HUI WEN CHENG, WUN YUAN JHENG
  • Patent number: 7823216
    Abstract: A method of producing a probe device for a metrology instrument such as an AFM includes providing a substrate having front and back surfaces and then forming an array of tip height structures on the first surface of the substrate, the structures having varying depths corresponding to selectable tip heights. The back surface of the substrate is etched until a thickness of the substrate substantially corresponds to a selected tip height, preferably by monitoring this etch visually and/or monitoring the etch rate. The tips are patterned from the front side of the wafer relative to fixed ends of the cantilevers, and then etched using an anisotropic etch. As a result, probe devices having sharp tips and short cantilevers exhibit fundamental resonant frequencies greater than 700 kHz or more.
    Type: Grant
    Filed: August 2, 2007
    Date of Patent: October 26, 2010
    Assignee: Veeco Instruments Inc.
    Inventors: Wenjun Fan, Steven F. Nagle
  • Patent number: 7814566
    Abstract: A fabricating method of a structure having nano-hole is provided. The fabricating method includes: providing a substrate, forming a photoresist layer on the substrate, forming an opening, and performing a heat treatment process on the photoresist layer to shrink the opening to form a nano-hole. The structure having nano-hole fabricated by the method of the present invention can be used to fabricate a nano-tip having a diameter of tip-body of no more than 10 nm, high aspect ratio, and a uniform diameter of tip-body.
    Type: Grant
    Filed: April 20, 2007
    Date of Patent: October 12, 2010
    Assignee: Industrial Technology Research Institute
    Inventor: Wei-Su Chen
  • Patent number: 7814565
    Abstract: Techniques for forming a nanostructure on a probe tip are provided.
    Type: Grant
    Filed: August 27, 2008
    Date of Patent: October 12, 2010
    Assignee: SNU R&DB Foundation
    Inventors: Yong Hyup Kim, Tae June Kang
  • Publication number: 20100229264
    Abstract: Improved methods for loading arrays of tips with a material for subsequent deposition of the material from the tip to the substrate. Tip loading can be done by controlled vapor deposition which reduces the amount of non-specific material deposition onto a substrate. Improved nanoscale and microscale engineering and lithography can be achieved. Applications include better cellular studies including stem cell studies and stem cell differentiation control.
    Type: Application
    Filed: January 25, 2010
    Publication date: September 9, 2010
    Inventors: Nabil A. Amro, Raymond Sanedrin
  • Publication number: 20100229265
    Abstract: A mechanically stable and oriented scanning probe tip comprising a carbon nanotube having a base with a gradually decreasing diameter, with a sharp tip at the probe tip. Such a tip or an array of tips is produced by depositing a catalyst metal film on a substrate, depositing a carbon dot on the catalyst metal film, etching away the catalyst metal film not masked by the carbon dot, removing the carbon dot from the catalyst metal film to expose the catalyst metal film and growing a carbon nanotube probe tip on the catalyst metal film. The carbon probe tips can be straight, angled, or sharply bent and have various technical applications.
    Type: Application
    Filed: April 27, 2010
    Publication date: September 9, 2010
    Inventors: Sungho Jin, Li-Han Chen, I-Chen Chen
  • Patent number: 7765607
    Abstract: Probes and methods of making probes are provided, particularly probes or nano-tools having tip active areas of extremely small dimensions, e.g., on the order of one angstrom to a few nanometers. One method of making a nano-tool includes forming a composite including a tool layer less than 10 nm thick on a substrate layer, subtracting a region of the substrate layer at least partially through the thickness of the substrate layer, thereby exposing a well surface, and folding the composite so that portions of the tool layer surface diverge and portions of the well surface converge, wherein an outer crease of the folded tool layer is a nanotool active area.
    Type: Grant
    Filed: June 15, 2006
    Date of Patent: July 27, 2010
    Inventor: Sadeg M. Faris
  • Publication number: 20100154085
    Abstract: A microscope including both an atomic force microscope and a near-field optical microscope and capable of performing electrochemical measurements and a cantilever for the microscope are disclosed. A pointed light transmitting material employed as the probe of an atomic force microscope is coated with a metal layer; the metal layer is further coated with an insulating layer; the insulating layer is removed only at the distal end to expose the metal layer; the slightly exposed metal layer is employed as a working electrode; and the probe can be employed not only as the probe of the atomic force microscope and the near-field optical microscope but also as the electrode of an electrochemical microscope. Consequently, the microscope can have the functions of an atomic force microscope, a near-field optical microscope and an electrochemical microscope.
    Type: Application
    Filed: March 30, 2006
    Publication date: June 17, 2010
    Inventors: Kenichi Maruyama, Koji Suzuki, Masato Iyoki
  • Publication number: 20100154087
    Abstract: The invention relates to a method for the catalytic growth of carbon nanotubes on nanometric tips by chemical vapour deposition assisted by a hot filament, that comprises a first step of applying a preliminary dual-layer coating of cobalt and titanium on said tip, the titanium layer having a thickness of between 0.1 nm and 0.2 nm and cobalt layer having a thickness of between 0.3 nm and 2 nm.
    Type: Application
    Filed: February 1, 2008
    Publication date: June 17, 2010
    Applicant: Centre National De La Rechereche Scientifique (C.N.R.S
    Inventors: Anne-Marie Bonnot, Frederic Gay, Pierre Henri Perrier
  • Patent number: 7737414
    Abstract: A method for preparing an iridium tip with atomic sharpness. The method includes tapering an iridium wire to a needle shape and heating the iridium needle in an oxygen atmosphere. Also disclosed is an iridium needle having a pyramidal structure which terminates with a small number of atoms prepared by the methods.
    Type: Grant
    Filed: October 26, 2007
    Date of Patent: June 15, 2010
    Assignee: Academia Sinica
    Inventors: Hong-Shi Kuo, Ing-Shouh Hwang, Tien T. Tsong, Tsu-Yi Fu
  • Publication number: 20100132080
    Abstract: An encapsulated nanostructure fabricated using layers of polymer material and further processed for use in a micro-scale target device is presented. The fabrication includes the formation on a substrate of an array of encapsulated nanostructures. The encapsulated nanostructures each include a nanostructure and a micro-scale, multi-block structure that encapsulates the nanostructure. Each encapsulated nanostructure can be made usable by a target device by removing, e.g., by etching, one of the layers to expose a portion of the nanostructure.
    Type: Application
    Filed: November 3, 2009
    Publication date: May 27, 2010
    Applicant: Massachusetts Institute of Technology
    Inventors: Sang-Gook Kim, Soohyung Kim, Hyung Woo Lee
  • Publication number: 20100100989
    Abstract: A device comprising at least one cantilever comprising at least one piezoresistor is described, where the cantilevers comprise silicon nitride or silicon carbide and the piezoresistors comprise doped silicon. Methods for making and using such a device are also provided.
    Type: Application
    Filed: May 13, 2009
    Publication date: April 22, 2010
    Inventors: Joseph S. Fragala, Albert K. Henning, Raymond R. Shile
  • Patent number: 7703147
    Abstract: The present disclosure relates to a method for fabricating a scanning probe microscope (SPM) nanoneedle probe using an ion beam, a SPM nanoneedle probe, a method of fabricating a critical dimension scanning probe microscope (CD-SPM) nanoneedle probe using an ion beam, a CD-SPM nanoneedle probe, and uses thereof. A disclosed method can comprise: positioning the probe so that a tip of the probe on which the nanoneedle is attached faces toward a direction in which the ion beam is irradiated; and aligning the nanoneedle attached on the tip of the probe with the ion beam in parallel by irradiating the ion beam toward the tip of the probe on which the nanoneedle is attached.
    Type: Grant
    Filed: July 1, 2005
    Date of Patent: April 20, 2010
    Assignee: Korea Research Institute of Standards and Science
    Inventors: Byong-Cheon Park, Ki-Young Jung, Won-Young Song, Jae-Wan Hong, Beom-Hoan O, Sang-Jung Ahn
  • Publication number: 20100095409
    Abstract: A method of manufacturing an SPM probe having a support element, a cantilever, and a scanning tip on an underside of the cantilever, and having a mark located on the top side of the cantilever opposite the scanning tip. The mark on the top side of the cantilever is located exactly opposite the scanning tip on the underside of the cantilever. This makes it possible to identify the exact position of the scanning tip in the scanning probe microscope from the upward-pointing top side of the cantilever, which significantly simplifies the alignment of the SPM probe. The support element with the cantilever may be prefabricated conventionally and the scanning tip and the mark are then produced on the cantilever in a self-aligning way by means of a particle-beam-induced material deposition based on a gas-induced process.
    Type: Application
    Filed: October 9, 2009
    Publication date: April 15, 2010
    Applicant: NANOWORLD AG
    Inventors: Thomas SULZBACH, Oliver KRAUSE, Mathieu BURRI, Manfred DETTERBECK, Bernd IRMER, Christian PENZKOFER
  • Publication number: 20100005553
    Abstract: Sidewall tracing nanoprobes, in which the tip shape of the nanoprobe Is altered so that the diameter or width of the very tip of the probe is wider than the diameter of the supporting stem. Such side protruding probe tips are fabricated by a subtractive method of reducing the stem diameter, an additive method of increasing the tip diameter, or sideway bending of the probe tip. These sidewall tracing nanoprobes are useful for inspection of semiconductor devices, especially to quantitatively evaluate the defects on the side wall of trenches or via holes.
    Type: Application
    Filed: July 27, 2007
    Publication date: January 7, 2010
    Inventors: Sungho Jin, Li-Hen Chen, Gregory Dahlen, Hao-Chih Liu
  • Patent number: 7635392
    Abstract: The present invention provides a scanning probe microscope cantilever comprising a support portion, a lever portion extended from the support portion, and a needle projecting out of a first surface of the cantilever in the vicinity of a free end of the lever portion. From a second surface of the cantilever opposite the first surface, a bore extends through the needle to an aperture formed at a tip of the needle. To the tip of the needle, a substantially globular particle is attached. A method of scanning a sample surface comprises creating relative cantilever motion substantially toward the sample such that the particle experiences a contact force with the sample, illuminating a top surface of the cantilever with laser light such that a portion of the laser light passes through the hollow needle and is emitted from the aperture onto the particle, and detecting scattered light from the sample.
    Type: Grant
    Filed: August 14, 2007
    Date of Patent: December 22, 2009
    Assignee: Qimonda AG
    Inventors: Harald Bloess, Andreas Heidelberg, Jens-Hendrik Zollondz
  • Publication number: 20090172846
    Abstract: The invention relates to a nanoprobe comprising a silica fibre (2) with an end opening having a diameter of less than 100 nm, and a metallic sheath (11). The total diameter of the silica part and the metallic sheath (11) is less than 300 nm. The invention also relates to a method for producing one such nanoprobe.
    Type: Application
    Filed: June 6, 2006
    Publication date: July 2, 2009
    Applicants: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE- CNRS, UNIVERSITE DE NANTES
    Inventors: Tiberiu Minea, Guy Louarn, Guirec Ollivier, Marc Chaigneau
  • Publication number: 20090138996
    Abstract: The present invention relates to a method for the production of tips, the order of magnitude of which lies in the micro- and/or nanometer range, comprising contacting a precursor material with a matrix and then energetically activating over a large area, wherein the precursor material contains an element other than carbon from the second to fifth main groups, the sixth main group with an atomic number Z?16 or a sub-group of the periodic table of the elements and organic groups which are chemically bonded to the respective element directly and/or via an element of the sixth main group.
    Type: Application
    Filed: December 28, 2006
    Publication date: May 28, 2009
    Inventors: Jorn Volkher Wochnowski, Carsten Wochnowski, Dominique Pascal Eyidi, Jurgen Heck, Barbara Albert
  • Publication number: 20090138995
    Abstract: The present invention relates to treatments for atom probe components. For example, certain aspects are directed toward processes for treating an atom probe component that includes removing material from a surface of the atom probe component (e.g., using an ion beam, a plasma, a chemical etching process, and/or photonic energy). Another aspect of the invention is directed toward a method for treating an atom probe specimen that includes using a computing device to automatically control a voltage used in an ion sputtering process. Still other aspects of the invention are directed toward methods for treating an atom probe component that includes introducing photonic energy proximate to a surface of the atom probe component, annealing at least a portion of a surface of the atom probe component, coating at least a portion of a surface of the atom probe component, and/or cooling at least a portion of the atom probe component.
    Type: Application
    Filed: June 16, 2006
    Publication date: May 28, 2009
    Inventors: Thomas F. Kelly, David J. Larson, Richard L. Martens, Keith J. Thompson, Robert M. Ulfig, Scott A. Wiener
  • Publication number: 20090133171
    Abstract: Probe structures and fabrication techniques are described. The described probe structures can be used as probes for various applications such as conductance measurement probes, field emitter probes, nanofabrication probes, and magnetic bit writing or reading probes.
    Type: Application
    Filed: May 10, 2006
    Publication date: May 21, 2009
    Applicant: The Regents of the University of California
    Inventor: Sungho Jin
  • Publication number: 20090106869
    Abstract: The present invention relates to a method for fabricating a scanning probe microscope (SPM) nanoneedle probe using ion beam which is preferably focused ion beam and a nanoneedle probe thereby. More particularly, the present invention relates to a method for fabricating a SPM nanoneedle probe capable of being easily adjusted with an intended pointing direction of a nanoneedle attached on a tip of the SPM nanoneedle probe and of being easily straightened with the nanoneedle attached on the tip of the SPM nanoneedle probe along the intended pointing direction, and to a SPM nanoneedle probe thereby. Also, the present invention relates to a method for fabricating a critical dimension SPM (CD-SPM) nanoneedle probe capable of precisely scanning the sidewall of an sample object in nanoscale using ion beam which is preferably focused ion beam, and to a CD-SPM nanoneedle probe thereby.
    Type: Application
    Filed: July 1, 2005
    Publication date: April 23, 2009
    Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
    Inventors: Byong-Cheon Park, Ki-Young Jung, Won-Young Song, Jae-Wan Hong, Beom-Hoan O, Sang-Jung Ahn