Abstract: The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or “nanomembranes.
Type:
Grant
Filed:
January 7, 2011
Date of Patent:
September 17, 2013
Assignee:
Wisconsin Alumni Research Foundation
Inventors:
Max G. Lagally, Paul G. Evans, Clark S. Ritz
Abstract: Various embodiments of the present invention are directed to photonic devices that can be used to collect and convert incident ER into surface plasmons that can be used to enhance the operation of microelectronic devices. In one embodiment of the present invention, a photonic device comprises a dielectric layer having a top surface and a bottom surface, and a planar nanowire network covering at least a portion of the top surface of the dielectric layer. The bottom surface of the dielectric layer is positioned on the top surface of a substrate, and the planar nanowire network is configured to convert incident electromagnetic radiation into surface plasmons that penetrate through the dielectric layer and into at least a portion of the substrate.
Type:
Grant
Filed:
October 15, 2007
Date of Patent:
January 22, 2013
Assignee:
Hewlett-Packard Development Company, L.P.
Abstract: A photosensitive device (100), the photosensitive device (100) comprising a substrate (101) and a plurality of vertically aligned nanowire diodes (102 to 105) provided on and/or in the substrate (101).
Abstract: The present invention provides a “microminiaturizing method of nano-structure” with fabricating process steps as follows: First deposit the material of molecule or atom state on the top-opening of the nano cylindrical pore, which having formed on the substrate, so that the diameter of said top-opening gradually reduce to become a reduced nano-aperture, whose opening diameter is smaller than that of said top-opening; Then, directly pass the deposit material of gas molecule or atom state through said reduced nano-aperture; thereby a nano-structure of nano quantum dot, nano rod or nano ring with smaller nano scale is directly formed on the surface of said substrate, which being laid beneath the bottom of said nano cylindrical pore.
Abstract: Kinked nanowires are used for measuring electrical potentials inside simple cells. An improved intracellular entrance is achieved by modifying the kinked nanowires with phospholipids.
Type:
Application
Filed:
September 24, 2010
Publication date:
October 25, 2012
Inventors:
Bozhi Tian, Ping Xie, Thomas J. Kempa, Charles M. Lieber, Itzhaq Cohen-Karni, Quan Qing, Xiaojie Duan
Abstract: Heterogeneous nanowires having a core-shell structure consisting of single-crystal apatite as the core and graphitic layers as the shell and a synthesis method thereof are provided. More specifically, provided is a method capable of producing large amounts of heterogeneous nanowires, composed of graphitic shells and apatite cores, in a reproducible manner, by preparing a substrate including an element corresponding to X of X6(YO4)3Z which is a chemical formula for apatite, adding to the substrate a gaseous source containing an element corresponding to Y of the chemical formula, adding thereto a gaseous carbon source, and allowing these reactants to react under optimized synthesis conditions using chemical vapor deposition (CVD), and to a method capable of freely controlling the structure and size of the heterogeneous nanowires and also to heterogeneous nanowires synthesized thereby.
Abstract: Nanowires useful as heterogeneous catalysts are provided. The nanowire catalysts are useful in a variety of catalytic reactions, for example, the oxidative coupling of methane to ethylene. Related methods for use and manufacture of the same are also disclosed.
Type:
Application
Filed:
May 24, 2011
Publication date:
February 16, 2012
Applicant:
Siluria Technologies, Inc.
Inventors:
Erik C. Scher, Fabio R. Zurcher, Joel M. Cizeron, Wayne P. Schammel, Alex Tkachenko, Joel Gamoras, Dmitry Karshtedt, Greg Nyce
Abstract: In alternative embodiments, the invention provides articles of manufacture comprising biocompatible nanostructures comprising PolyEther EtherKetone (PEEK) surface-modified (surface-nanopatterned) to exhibit nanostructured surfaces that promote osseointegration and bone-bonding for, e.g., joint (e.g., knee, hip and shoulder) replacements, bone or tooth reconstruction and/or implants, including their use in making and using artificial tissues and organs, and related, diagnostic, screening, research and development and therapeutic uses, e.g., as primary or ancillary drug delivery devices. In alternative embodiments, the invention provides biocompatible nanostructures that promote osseointegration and bone-bonding for enhanced cell and bone growth and e.g., for in vitro and in vivo testing, restorative and reconstruction procedures, implants and therapeutics.
Type:
Application
Filed:
July 6, 2011
Publication date:
January 12, 2012
Applicant:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Abstract: A method of making nanostructures using a self-assembled monolayer of organic spheres is disclosed. The nanostructures include bowl-shaped structures and patterned elongated nanostructures. A bowl-shaped nanostructure with a nanorod grown from a conductive substrate through the bowl-shaped nanostructure may be configured as a field emitter or a vertical field effect transistor. A method of separating nanoparticles of a desired size employs an array of bowl-shaped structures.
Type:
Application
Filed:
February 8, 2008
Publication date:
July 14, 2011
Applicant:
GEORGIA TECH RESEARCH CORPORATION
Inventors:
Zhong L. Wang, Christopher J. Summers, Xudong Wang, Elton D. Graugnard, Jeffrey King
Abstract: Provided are a semiconductor device and a method of manufacturing the semiconductor device, for example, a semiconductor device using carbon nanotubes or nanowires as lower electrodes of a capacitor, and a method of manufacturing the semiconductor device. The semiconductor device may include a lower electrode including a plurality of tubes or wires on a semiconductor substrate, a dielectric layer on the surface of the lower electrode, and an upper electrode on the surface of the dielectric layer, wherein the plurality of tubes or wires radiate outwardly from each other centering on the lower portion of the plurality of tubes or wires. Thus, the off current of the capacitor may be increased by increasing the surface area of the lower electrodes of the capacitor.
Type:
Grant
Filed:
October 31, 2007
Date of Patent:
September 21, 2010
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Young-moon Choi, Ji-young Kim, In-seok Yeo, Sun-woo Lee
Abstract: An object of the invention is to provide a coupling element of an MEMS filter with design flexibility and minimization of mass loading effects. The invention provides a structure wherein the mass loading effects are not reflected on the MEMS filter characteristic by using a nanosize coupling element with a very small mass compared to a microsize MEMS resonator, such as a carbon nanotube (CNT), as a coupling element part.
Abstract: This invention provides novel nanofibers and nanofiber structures which posses adherent properties, as well as the use of such nanofibers and nanofiber comprising structures in the coupling and/or joining together of articles or material.
Abstract: A plurality of conductive pads (2) are formed on a mounting surface of a mounting board. Conductive pads (11) are formed on a principal surface of a semiconductor chip (10) at positions corresponding to the conductive pads of the mounting board, when the principal surface faces toward the mounting board. A plurality of conductive nanotubes (12) extend from the conductive pads of one of the mounting board and the semiconductor chip. A press mechanism (3) presses the semiconductor chip against the mounting board and restricts a position of the semiconductor chip on the mounting surface to mount the semiconductor chip on the mounting board, in a state that tips of the conductive nanotubes are in contact with the corresponding conductive pads not formed with the conductive nanotubes.
Abstract: A composite conductive film formed of a polymer-matrix and a plurality of conductive lines less than micro-sized and its fabricating method are provided. The conductive lines are arranged parallel and spaced apart from each other so as to provide anisotropic conductivity. The present conductive film can serve as an electrical connection between a fine-pitch chip and a substrate. Additionally, an adhesive layer is formed on two opposite sides of the conductive film along its conductive direction to increase adhesive areas. The strength and reliability of the package using the conductive film are thus enhanced.
Type:
Grant
Filed:
June 30, 2006
Date of Patent:
October 20, 2009
Assignee:
Industrial Technology Research Institute
Abstract: The local bending of a silicon nanowire induces tensile strain in the wire due to the stretching of the silicon lattice. This in turn enhances the mobility of the free carriers (electrons) in the direction of transport along the wire. Thus, for example, when Gate-All-Around MOSFETs are fabricated along the nanowire, the mobility enhancement will translate into an improvement in the performance (current drive, speed) of the silicon nanowire MOSFETs. In summary, a semiconductor device comprises a substrate and a nanowire in connection with the substrate at a drain and at a source region, and the nanowire is bent to achieve enhanced mobility of charge carriers.
Type:
Application
Filed:
December 5, 2008
Publication date:
June 11, 2009
Applicant:
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
Inventors:
Kirsten MOSELUND, Mihai Adrian Ionescu, Didier Bouvet
Abstract: An integrated circuit device having vias having good resistance to migration causing the breaking of a wiring line, or an integrated circuit device having a wiring structure that is fined by breaking the limit of lithography technique is provided. The former device comprises a plurality of elements fabricated on a semiconductor substrate, wiring lines for making the elements and the integrated circuit device function, and vias for interconnecting wiring lines in separate layers, the via being formed of one or more cylindrical structures made up of carbon atoms. The latter device comprises a plurality of elements fabricated on a semiconductor substrate and wiring members for making the elements and the integrated circuit device function, at least part of the wiring members being formed of one or more cylindrical structures made up of carbon atoms.
Abstract: An integrated circuit device having vias having good resistance to migration causing the breaking of a wiring line, or an integrated circuit device having a wiring structure that is fined by breaking the limit of lithography technique is provided. The former device comprises a plurality of elements fabricated on a semiconductor substrate, wiring lines for making the elements and the integrated circuit device function, and vias for interconnecting wiring lines in separate layers, the via being formed of one or more cylindrical structures made up of carbon atoms. The latter device comprises a plurality of elements fabricated on a semiconductor substrate and wiring members for making the elements and the integrated circuit device function, at least part of the wiring members being formed of one or more cylindrical structures made up of carbon atoms.