Gas Phase Catalytic Growth (i.e., Chemical Vapor Deposition) Patents (Class 977/843)
-
Patent number: 12227419Abstract: The present disclosure provides a method for preparing patterned graphene, and the method includes using a silicon carbide base as a solid-state carbon source, decomposing the silicon carbide under the action of high temperature and catalyst, to directly grow graphene on an insulating substrate. Through a first patterned trench and a second patterned trench in an accommodating passage, the pattern of the formed graphene can be directly controlled. Therefore, the present disclosure can accurately locate the position of the patterned graphene on the insulating substrate, it does not require transferring the graphene one more time, thereby avoiding contaminating the graphene and damaging its structure, and there is no need for photo-lithography, ion etching and other processes to treat the graphene in order to obtain patterned graphene, which further avoids damages to the graphene.Type: GrantFiled: September 17, 2021Date of Patent: February 18, 2025Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Hongyan Zhu, Tianru Wu, Jiebin Gu, Chao Zhang, Boxiang Gao
-
Patent number: 12027591Abstract: A method of forming a semiconductor device and a semiconductor device are provided. The method includes forming a graphene layer at a first side of a silicon carbide substrate having at least next to the first side a first defect density of at most 5*102/cm2; attaching an acceptor layer at the graphene layer to form a wafer-stack, the acceptor layer comprising silicon carbide having a second defect density higher than the first defect density; forming an epitaxial silicon carbide layer; splitting the wafer-stack along a split plane in the silicon carbide substrate to form a device wafer comprising the graphene layer and a silicon carbide split layer at the graphene layer; and further processing the device wafer at the upper side.Type: GrantFiled: July 29, 2021Date of Patent: July 2, 2024Assignee: Infineon Technologies AGInventors: Hans-Joachim Schulze, Roland Rupp
-
Patent number: 11932541Abstract: This invention relates to a process and an apparatus for synthesizing multiwall carbon nanotubes from high molecular polymeric wastes. The process comprises using induction heating in combination with catalytic chemical vapour deposition (CVD) with an array of catalytic materials to synthesize high value carbon nanotubes with better yield and purity from high molecular polymeric wastes.Type: GrantFiled: August 16, 2018Date of Patent: March 19, 2024Assignee: NGEE ANN POLYTECHNICInventors: Sundaramurthy Jayaraman, Ali Masud
-
Patent number: 11915870Abstract: Capacitors having electrodes made of interconnected corrugated carbon-based networks (ICCNs) are disclosed. The ICCN electrodes have properties that include high surface area and high electrical conductivity. Moreover, the electrodes are fabricated into an interdigital planar geometry with dimensions that range down to a sub-micron scale. As such, micro-supercapacitors employing ICCN electrodes are fabricated on flexible substrates for realizing flexible electronics and on-chip applications that can be integrated with micro-electromechanical systems (MEMS) technology and complementary metal oxide semiconductor technology in a single chip. In addition, capacitors fabricated of ICCN electrodes that sandwich an ion porous separator realize relatively thin and flexible supercapacitors that provide compact and lightweight yet high density energy storage for scalable applications.Type: GrantFiled: January 4, 2022Date of Patent: February 27, 2024Assignee: The Regents of the University of CaliforniaInventors: Maher F. El-Kady, Veronica A. Strong, Richard B. Kaner
-
Patent number: 11888152Abstract: A method of producing a composite product is provided. The method includes providing a fluidized bed of metal oxide particles in a fluidized bed reactor, providing a catalyst or catalyst precursor in the fluidized bed reactor, providing a carbon source in the fluidized bed reactor for growing carbon nanotubes, growing carbon nanotubes in a carbon nanotube growth zone of the fluidized bed reactor, and collecting a composite product comprising metal oxide particles and carbon nanotubes.Type: GrantFiled: February 12, 2021Date of Patent: January 30, 2024Assignees: Honda Motor Co., Ltd., NanoSynthesis Plus, Ltd.Inventors: Avetik Harutyunyan, Neal Pierce, Elena Mora Pigos
-
Patent number: 11814291Abstract: The present invention relates to a nanomaterial comprising a nanoclay having a layered structure and carbon nanotubes being intercalated between layers of the layered of the nanoclay, and manufacturing method thereof.Type: GrantFiled: December 18, 2019Date of Patent: November 14, 2023Assignee: UTI Limited PartnershipInventors: Uttandaraman Sundararaj, Mohammad Asgari
-
Patent number: 11511994Abstract: The present invention relates to carbon nanotubes having a pore volume of 0.94 cm3/g or more, and being an entangled type, a method of manufacturing the same, and a positive electrode for a primary battery which comprises the same.Type: GrantFiled: July 26, 2019Date of Patent: November 29, 2022Assignee: LG CHEM, LTD.Inventors: Kyung Yeon Kang, Hyun Joon Kang, Ki Soo Lee, Soon Ki Jeong
-
Patent number: 11473192Abstract: The invention discloses equipment and preparation method for open and continuous growth of a carbon nanomaterial. The equipment comprises a metal foil tape feeding system, a CVD system and a collection system. The method includes continuously conveying a metal foil tape pretreated or not into the CVD system via the metal foil tape feeding system, depositing a required carbon nanomaterial on the surface of the metal foil tape by CVD, directly collecting by the collection system or directly post-treating the carbon nanomaterial by a post-treatment system, and even directly producing a end product of the carbon nanomaterial. All the systems in the invention are arranged in the open atmosphere rather than an air-isolated closed space. The invention can realize round-the-clock continuous operation to greatly improve the production efficiency of carbon nanomaterials.Type: GrantFiled: November 27, 2019Date of Patent: October 18, 2022Assignee: SHENZHEN NASO TECH CO., LTD.Inventors: Guofang Zhong, Can Zhang
-
Patent number: 11474012Abstract: A method for preparing a SiC ingot includes: disposing a raw material and a SiC seed crystal facing each other in a reactor having an internal space; subliming the raw material by controlling a temperature, a pressure, and an atmosphere of the internal space; growing the SiC ingot on the seed crystal; and collecting the SiC ingot after cooling the reactor. The wafer prepared from the ingot, which is prepared from the method, generates cracks when an impact is applied to a surface of the wafer, the impact is applied by an external impact source having mechanical energy, and a minimum value of the mechanical energy is 0.194 J to 0.475 J per unit area (cm2).Type: GrantFiled: June 29, 2020Date of Patent: October 18, 2022Assignee: SENIC INC.Inventors: Jong Hwi Park, Jongmin Shim, Eun Su Yang, Yeon Sik Lee, Byung Kyu Jang, Jung Woo Choi, Sang Ki Ko, Kap-Ryeol Ku, Jung-Gyu Kim
-
Patent number: 11396626Abstract: A method for preparing a light sensitive particle that uses at least one metal precursor material and at least one dopant precursor material mixed in solution absent a surfactant. Upon an optional adjustment of pH to about 3 to about 6, a light-sensitive particle comprising a metal-dopant material may be formed and separated from the solution. The light-sensitive particle may comprise a Q-dot particle. Also described are the particles themselves.Type: GrantFiled: August 25, 2020Date of Patent: July 26, 2022Assignee: University of Central Florida Research Foundation, Inc.Inventors: Jeremy Tharkur, Swadeshmukul Santra
-
Patent number: 9028791Abstract: A system and method for manufacturing carbon nanotubes using chemical vapor deposition. The system has a first chamber comprising at least one cathode and at least one anode, a gas supply source, at least one activation energy source, at least one alignment energy source, a second chamber situated within said first chamber, said second chamber comprising: a target growth plate, comprising a catalyst and a substrate, a second cathode configured to support said target growth plate, a movable platform configured to support said second cathode, and a gas permeable barrier vertically opposed from said second cathode.Type: GrantFiled: November 27, 2012Date of Patent: May 12, 2015Assignee: Dream Matter, LLCInventor: Joel Maier
-
Patent number: 9023308Abstract: Methods of ex situ synthesis of graphene, graphene oxide, reduced graphene oxide, other graphene derivative structures and nanoparticles useful as polishing agents are disclosed. Compositions and methods for polishing, hardening, protecting, adding longevity to, and lubricating moving and stationary parts in devices and systems, including, but not limited to, engines, turbos, turbines, tracks, races, wheels, bearings, gear systems, armor, heat shields, and other physical and mechanical systems employing machined interacting hard surfaces through the use of nano-polishing agents formed in situ from lubricating compositions and, in some cases, ex situ and their various uses are also disclosed.Type: GrantFiled: April 29, 2014Date of Patent: May 5, 2015Assignee: Peerless Worldwide, LLCInventor: Richard S. Shankman
-
Patent number: 9017636Abstract: A deposition method of fine particles, includes the steps of irradiating a fine particle beam formed by size-classified fine particles to an irradiated subject under a vacuum state, and depositing the fine particles on a bottom part of a groove structure formed at the irradiated subject.Type: GrantFiled: December 5, 2012Date of Patent: April 28, 2015Assignee: Fujitsu LimitedInventors: Yuji Awano, Noriyoshi Shimizu, Shintaro Sato
-
Patent number: 9017635Abstract: The present invention relates to a continuous manufacturing apparatus for a carbon nanotube having gas separation units and a continuous manufacturing method for a carbon nanotube using the same. According to the present invention, the present invention has an effect to provide the continuous manufacturing apparatus of the carbon nanotube and continuous manufacturing method using the same, in which it makes possible to perform a rapid processing; has excellent productivity and excellent conversion rate of carbon source; can significantly reduce the cost of production; can reduce energy consumption because a reactor size can be decreased as compared with capacity; and a gas separation unit that not generate a waste gas.Type: GrantFiled: August 25, 2011Date of Patent: April 28, 2015Assignee: LG Chem, Ltd.Inventors: Kwang-Hyun Chang, Jin-Do Kim, Kwang-Woo Yoon
-
Patent number: 9017634Abstract: Mass production of carbon nanotubes (CNT) are facilitated by methods and apparatus disclosed herein. Advantageously, the methods and apparatus make use of a single production unit, and therefore provide for uninterrupted progress in a fabrication process. Embodiments of control systems for a variety of CNT production apparatus are included.Type: GrantFiled: August 17, 2012Date of Patent: April 28, 2015Assignee: FastCAP Systems CorporationInventors: Nicolò Michele Brambilla, Riccardo Signorelli, Fabrizio Martini, Oscar Enrique Corripio Luna
-
Patent number: 9017637Abstract: The present disclosure relates to a method for making carbon nanotube structure. A substrate having a growing surface is provided. A carbon nanotube layer is placed on the growing surface of the substrate. Part of the growing surface is exposed from the carbon nanotube layer. A number of first catalysts are deposited on surface of the carbon nanotube layer and a number of second catalysts are deposited on the growing surface. A carbon nanotube array is grown on the growing surface and a carbon nanotube cluster is grown on surface of the carbon nanotube layer.Type: GrantFiled: December 11, 2012Date of Patent: April 28, 2015Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Peng Liu, Kai-Li Jiang, Shou-Shan Fan
-
Patent number: 9005564Abstract: Disclosed are carbon nanotubes and a method for manufacturing the same. Advantageously, the method provides a high yield of potato or sphere-shaped non-bundled carbon nanotubes having a bulk density of 80 to 250 kg/m3, an ellipticity of 0.9 to 1.0 and a particle diameter distribution (Dcnt) of 0.5 to 1.0 using a two-component carbon nanotube catalyst comprising a catalyst component and an active component.Type: GrantFiled: January 9, 2013Date of Patent: April 14, 2015Assignee: LG Chem, Ltd.Inventors: Kyung Yeon Kang, Jin Do Kim, Sung Jin Kim, Jae Keun Yoon
-
Publication number: 20150093576Abstract: Disclosed herein are carbon nanotubes and a method of manufacturing the same. The carbon nanotubes include at least one element selected from aluminum (Al), magnesium (Mg) and silicon (Si) and at least one metal selected from cobalt (Co), nickel (Ni), iron (Fe), manganese (Mn) and molybdenum (Mo), and have an intensity ratio (ID/IG) of about 1.10 or less as measured by Raman spectroscopy and a carbon purity of about 98% or higher. The carbon nanotubes prepared by the method can be controlled in terms of carbon purity and preparation yield while eliminating the need for post-refining treatment.Type: ApplicationFiled: September 29, 2014Publication date: April 2, 2015Inventors: Seung Yong BAE, Yun Tack LEE, Byeong Yeol KIM, Joong In KIM, Sung Hee AHN
-
Patent number: 8993448Abstract: A method of forming a plurality of nanotubes is disclosed. Particularly, a substrate may be provided and a plurality of recesses may be formed therein. Further, a plurality of nanotubes may be formed generally within each of the plurality of recesses and the plurality of nanotubes may be substantially surrounded with a supporting material. Additionally, at least some of the plurality of nanotubes may be selectively shortened and at least a portion of the at least some of the plurality of nanotubes may be functionalized. Methods for forming semiconductor structures intermediate structures, and semiconductor devices are disclosed. An intermediate structure, intermediate semiconductor structure, and a system including nanotube structures are also disclosed.Type: GrantFiled: November 26, 2013Date of Patent: March 31, 2015Assignee: Micron Technology, Inc.Inventors: Gurtej S. Sandhu, Terry L. Gilton
-
Patent number: 8986835Abstract: A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiNx on the GaN film, etching a growth opening through the SiNx and into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiNx layer can be removed after the growing step. A SiOx template can be formed on the GaN film and the GaN can be grown to cover the SiOx template before depositing SiNx on the GaN film. The SiOx template can be removed after growing the nanorods.Type: GrantFiled: April 5, 2011Date of Patent: March 24, 2015Assignee: Purdue Research FoundationInventors: Isaac Harshman Wildeson, Timothy David Sands
-
Patent number: 8974719Abstract: A method of forming nano-structure composite materials that have a binder material and a nanostructure fiber material is described. A precursor material may be formed using a mixture of at least one metal powder and anchored nanostructure materials. The metal powder mixture may be (a) Ni powder and (b) NiAl powder. The anchored nanostructure materials may comprise (i) NiAl powder as a support material and (ii) carbon nanotubes attached to nanoparticles adjacent to a surface of the support material. The process of forming nano-structure composite materials typically involves sintering the mixture under vacuum in a die. When Ni and NiAl are used in the metal powder mixture Ni3Al may form as the binder material after sintering. The mixture is sintered until it consolidates to form the nano-structure composite material.Type: GrantFiled: February 12, 2010Date of Patent: March 10, 2015Assignee: Consolidated Nuclear Security, LLCInventors: Roland D. Seals, Paul A. Menchhofer, Jane Y. Howe, Wei Wang
-
Patent number: 8951632Abstract: A composition includes a carbon nanotube (CNT)-infused carbon fiber material that includes a carbon fiber material of spoolable dimensions and carbon nanotubes (CNTs) infused to the carbon fiber material. The infused CNTs are uniform in length and uniform in distribution. The CNT infused carbon fiber material also includes a barrier coating conformally disposed about the carbon fiber material, while the CNTs are substantially free of the barrier coating. A continuous CNT infusion process includes: (a) functionalizing a carbon fiber material; (b) disposing a barrier coating on the functionalized carbon fiber material (c) disposing a carbon nanotube (CNT)-forming catalyst on the functionalized carbon fiber material; and (d) synthesizing carbon nanotubes, thereby forming a carbon nanotube-infused carbon fiber material.Type: GrantFiled: November 2, 2009Date of Patent: February 10, 2015Assignee: Applied NanoStructured Solutions, LLCInventors: Tushar K. Shah, Slade H. Gardner, Mark R. Alberding, Harry C. Malecki
-
Patent number: 8951631Abstract: A composition includes a carbon nanotube (CNT)-infused metal fiber material which includes a metal fiber material of spoolable dimensions, a barrier coating conformally disposed about the metal fiber material, and carbon nanotubes (CNTs) infused to the metal fiber material. A continuous CNT infusion process includes: (a) disposing a barrier coating and a carbon nanotube (CNT)-forming catalyst on a surface of a metal fiber material of spoolable dimensions; and (b) synthesizing carbon nanotubes on the metal fiber material, thereby forming a carbon nanotube-infused metal fiber material.Type: GrantFiled: November 2, 2009Date of Patent: February 10, 2015Assignee: Applied NanoStructured Solutions, LLCInventors: Tushar K. Shah, Slade H. Gardner, Mark R. Alberding, Harry C. Malecki
-
Patent number: 8945502Abstract: An electronics component is disclosed herein. The electronics component include a substrate and a plurality of single-walled carbon nanotubes (SWNTs) formed on said substrate, wherein said plurality of SWNTs form a patterned, dense and high-quality arrays of single-walled carbon nanotubes (SWNTs) on quartz wafers by using FeCl3/polymer as catalytic precursors and chemical vapor deposition (CVD) of methane. With the assistance of polymer, the catalysts may be well-patterned on the wafer surface by simple photolithography or polydimethylsiloxane (PDMS) stamp microcontact printing (?CP).Type: GrantFiled: April 24, 2009Date of Patent: February 3, 2015Assignee: The Regents of the University of CaliforniaInventors: Peter J. Burke, Weiwei Zhou, Christopher M. Rutherglen
-
Patent number: 8940628Abstract: A method of manufacturing an interconnection of an embodiment includes: forming a via which penetrates an interlayer insulation film on a substrate; forming an underlying film in the via; removing the underlying film on a bottom part of the via; forming a catalyst metal inactivation film on the underlying film; removing the inactivation film on the bottom part of the via; forming a catalyst metal film on the bottom part of the via on which the inactivation film is removed; performing a first plasma treatment and a second plasma treatment using a gas not containing carbon on a member in which the catalyst metal film is formed; forming a graphite layer on the catalyst film after the first and second plasma treatment processes; and causing a growth of a carbon nanotube from the catalyst film on which the graphite layer is formed.Type: GrantFiled: December 26, 2013Date of Patent: January 27, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Yuichi Yamazaki, Tadashi Sakai
-
Patent number: 8926933Abstract: The present invention is directed to methods of making nanofiber yarns. In some embodiments, the nanotube yarns comprise carbon nanotubes. Particularly, such carbon nanotube yarns of the present invention provide unique properties and property combinations such as extreme toughness, resistance to failure at knots, high electrical and thermal conductivities, high absorption of energy that occurs reversibly, up to 13% strain-to-failure compared with the few percent strain-to-failure of other fibers with similar toughness, very high resistance to creep, retention of strength even when heated in air at 450° C. for one hour, and very high radiation and UV resistance, even when irradiated in air.Type: GrantFiled: November 9, 2005Date of Patent: January 6, 2015Assignee: The Board of Regents of The University of Texas SystemInventors: Mei Zhang, Ray H. Baughman, Kenneth Ross Atkinson
-
Patent number: 8926934Abstract: A method for growing an array of carbon nanotubes includes the steps of: (a) providing a substrate; (b) forming a catalyst film on the substrate, the catalyst film including carbonaceous material; (c) introducing a mixture of a carrier gas and a carbon source gas flowing across the catalyst film; (d) focusing a laser beam on the catalyst film to locally heat the catalyst to a predetermined reaction temperature; and (e) growing an array of the carbon nanotubes from the substrate.Type: GrantFiled: November 2, 2007Date of Patent: January 6, 2015Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Kai-Li Jiang, Zhuo Chen, Chun-Xiang Luo, Shou-Shan Fan
-
Patent number: 8911701Abstract: An industrial process and an apparatus for fabricating carbon nanotubes (CNTs) is provided, comprising synthesis of the carbon nanotubes by decomposing a carbon source brought into contact, in a fluidized-bed reactor, whereby the carbon nanotubes synthesized in the reactor and fixed onto the grains of catalytic substrate in the form of an entangled three-dimensional network, forming agglomerates constituting the CNT powder, are recovered sequentially by discharging them while hot, that is to say at the reaction temperature for synthesizing the CNTs, at the foot of the reactor, the sequence in which the discharges are carried out corresponding to the frequency of filling of the reactor.Type: GrantFiled: March 20, 2012Date of Patent: December 16, 2014Assignee: Arkema FranceInventors: Patrice Gaillard, Serge Bordere
-
Patent number: 8906335Abstract: Broad-area synthesis of aligned and densely-packed carbon nanotubes (CNT) is disclosed. CNT are repeatedly synthesized and then drawn together to locally and globally achieve increased packing densities. The process synthesizes an aligned, relatively sparse forest of CNT on a catalyzed sacrificial substrate. The catalyst is removed, thereby releasing the CNT but leaving them in place on the substrate. A liquid-induced collapse produces regions of more densely packed CNT and regions where no CNT remain. A fresh catalyst is deposited on the exposed regions of the substrate and a sparse forest of aligned CNT is regrown in these regions. The CNT also may form on the tops of the densified regions of CNT. The top-growth CNT may be removed or incorporated into the solid such that the solid is expanded axially. This process, e.g., growth then densification, is repeated to form a near-continuous solid of aligned and densely packed CNT.Type: GrantFiled: May 29, 2008Date of Patent: December 9, 2014Assignee: Lockheed Martin CorporationInventor: Keith A. Slinker
-
Patent number: 8887663Abstract: A system for use in fabrication of carbon nanotubes (CNTs) includes a wafer having a circuitry and a plurality of CNT seed sites. The system also includes a base assembly configured to support the wafer. The system further includes a first tube disposed over the wafer and configured to surround the CNTs that form on the seed sites. The circuitry in the wafer is configured to conduct at least one static charge. The wafer includes a top surface having a plurality of CNT seed sites, each seed site coupled to the circuitry and configured to receive one of the at least one static charge.Type: GrantFiled: September 27, 2011Date of Patent: November 18, 2014Assignees: Samsung Austin Semiconductor, L.P., Samsung Electronics Co., Ltd.Inventors: Robert Stebbins, Russell Olson
-
Patent number: 8865109Abstract: Systems and methods for the formation of carbon-based nanostructures are generally described. In some embodiments, the nanostructures may be formed on a nanopositor. The nanopositor can comprise, in some embodiments, at least one of metal atoms in a non-zero oxidation state and metalloid atoms in a non-zero oxidation state. For example, the nanopositor may comprise a metal oxide, a metalloid oxide, a metal chalcogenide, a metalloid chalcogenide, and the like. The carbon-based nanostructures may be grown by exposing the nanopositor, in the presence or absence of a growth substrate, to a set of conditions selected to cause formation of carbon-based nanostructures on the nanopositor. In some embodiments, metal or metalloid atoms in a non-zero oxidation state are not reduced to a zero oxidation state during the formation of the carbon-based nanostructures. In some cases, metal or metalloid atoms in a non-zero oxidation state do not form a carbide during the formation of the carbon-based nanostructures.Type: GrantFiled: August 7, 2012Date of Patent: October 21, 2014Assignee: Massachusetts Institute of TechnologyInventors: Stephen A. Steiner, III, Brian L. Wardle
-
Publication number: 20140302232Abstract: Apparatuses and methods for depositing materials on both side of a web while it passes a substantially vertical direction are provided. In particular embodiments, a web does not contact any hardware components during the deposition. A web may be supported before and after the deposition chamber but not inside the deposition chamber. At such support points, the web may be exposed to different conditions (e.g., temperature) than during the deposition.Type: ApplicationFiled: April 14, 2014Publication date: October 9, 2014Applicant: Amprius,Inc.Inventors: Ronald J. Mosso, Ghyrn E. Loveness
-
Patent number: 8845995Abstract: The present invention relates to single walled and multi-walled carbon nanotubes (CNTs), functionalized CNTs and carbon nanotube composites with controlled properties, to a method for aerosol synthesis of single walled and multi-walled carbon nanotubes, functionalized CNTs and carbon nanotube composites with controlled properties from pre-made catalyst particles and a carbon source in the presence of reagents and additives, to functional, matrix and composite materials composed thereof and structures and devices fabricated from the same in continuous or batch CNT reactors. The present invention allows all or part of the processes of synthesis of CNTs, their purification, doping, functionalization, coating, mixing and deposition to be combined in one continuous procedure and in which the catalyst synthesis, the CNT synthesis, and their functionalization, doping, coating, mixing and deposition can be separately controlled.Type: GrantFiled: March 9, 2005Date of Patent: September 30, 2014Assignee: Canatu OyInventors: Esko Kauppinen, David P. Brown, Albert G. Nasibulin, Hua Jiang, Anna Moisala
-
Patent number: 8845996Abstract: The present disclosure is directed to a method of producing metallic single-wall carbon nanotubes by treatment of carbon nanotube producing catalysts to obtain the desired catalyst particle size to produce predominantly metallic single wall carbon nanotubes. The treatment of the carbon nanotube producing catalyst particles involves contacting the catalyst particles with a mixture of an inert gas, like He, a reductant, such as H2, and an adsorbate, like water, at an elevated temperature range, for example, at 500° C. to 860° C., for a sufficient time to obtain the catalyst particle size. In some of the present methods, the preferential growth of nanotubes with metallic conductivity of up to 91% has been demonstrated.Type: GrantFiled: July 28, 2009Date of Patent: September 30, 2014Assignee: Honda Motor Co., Ltd.Inventor: Avetik R. Harutyunyan
-
Publication number: 20140273259Abstract: A method of making a low-dimensional material chemical vapor sensor comprising exfoliating MoS2, applying the monolayer flakes of MoS2 onto a SiO2/Si wafer, applying a methylmethacrylate (MMA)/polymethylmethacrylate (PMMA) film, defining trenches for the deposition of metal contacts, and depositing one of Ti/Au, Au, and Pt in the trench and resulting in a MoS2 sensor. A low-dimensional material chemical vapor sensor comprising monolayer flakes of MoS2, trenches in the SiO2/Si wafer, metal contacts in the trenches, and thereby resulting in a MoS2 sensor. A full spectrum sensing suite comprising similarly fabricated parallel sensors made from a variety of low-dimensional materials including graphene, carbon nanotubes, MoS2, BN, and the family of transition metal dichalcogenides. The sensing suites are small, robust, sensitive, low-power, inexpensive, and fast in their response to chemical vapor analytes.Type: ApplicationFiled: November 8, 2013Publication date: September 18, 2014Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Adam L. Friedman, F. Keith Perkins, Enrique Cobas, Paul M. Campbell, Glenn G. Jernigan, Berend T. Jonker
-
Patent number: 8834632Abstract: In a method of manufacturing a carbon nanotube, a boat configured to receive substrates is positioned outside of a synthesis space where the carbon nanotube is synthesized. The substrates are loaded into the boat. The boat is then transferred to the synthesis space. A process for forming the carbon nanotube is performed on the substrates in the synthesis space to form the carbon nanotube. Thus, the carbon nanotube may be effectively manufactured.Type: GrantFiled: November 30, 2007Date of Patent: September 16, 2014Assignee: Korea Kumho Petrochemical Co., LtdInventors: Ho-Soo Hwang, Sung-Soo Kim, Jung-Keun Cho
-
Patent number: 8828349Abstract: A substrate for growing carbon nanotubes capable of elongating single-walled carbon nanotubes of an average diameter of less than 2 nm is provided. The substrate for growing carbon nanotubes 1 is equipped with a reaction prevention layer 3 formed on a base material 2, a catalyst material layer 4 formed on the reaction prevention layer 3, a dispersion layer 5 formed on the catalyst material layer 4, and a dispersion promotion layer 6 formed on the dispersion layer 5.Type: GrantFiled: March 7, 2012Date of Patent: September 9, 2014Assignees: Honda Motor Co., Ltd., Waseda UniversityInventors: Toshiyuki Ohashi, Toshio Tokune, Masahiro Ota, Hidefumi Nikawa, Hiroshi Kawarada, Takumi Ochiai
-
Patent number: 8821975Abstract: A method for making a branched carbon nanotube structure includes steps, as follows: providing a substrate and forming a buffer layer on a surface of the substrate; depositing a catalyst layer on the surface of the buffer layer; putting the substrate into a reactive device; and forming the branched carbon nanotubes on the surface of the buffer layer and along the surface of the buffer layer by a chemical vapor deposition method. The material of the catalyst layer is non-wetting with the material of the buffer layer at a temperature that the branched carbon nanotube are formed. A yield of the branched carbon nanotubes in the structure can reach about 50%.Type: GrantFiled: October 26, 2007Date of Patent: September 2, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Chun-Xiang Luo, Liang Liu, Kai-Li Jiang, Shou-Shan Fan
-
Publication number: 20140241974Abstract: This carbon nanofiber is produced by a vapor phase reaction of a carbon oxide-containing raw material gas using a friend oxide powder including a Co oxide as a catalyst, wherein at least one type selected from metal cobalt, carbon-containing cobalt metals, and cobalt-carbon compounds is contained (encapsulated) in the fiber in a wrapped state. This method for producing a carbon nanofiber includes: producing a carbon nanofiber by, a vapor phase reaction of a carbon oxide-containing raw material gas using a mixed powder of a Co oxide and a Mg oxide as a catalyst, wherein a mixed powder of CoO and MgO, which is obtained by hydrogen-reducing a mixed powder of Co3O4 and MgO using a reduction gas having a hydrogen concentration in which metal cobalt is not generated, is used as the catalyst.Type: ApplicationFiled: September 28, 2012Publication date: August 28, 2014Inventors: Masahiro Hagiwara, Hiroyuki Imai
-
Patent number: 8815341Abstract: Processes for growing carbon nanotubes on carbon fiber substrates are described herein. The processes can include depositing a catalyst precursor on a carbon fiber substrate, optionally depositing a non-catalytic material on the carbon fiber substrate, and after depositing the catalyst precursor and the optional non-catalytic material, exposing the carbon fiber substrate to carbon nanotube growth conditions so as to grow carbon nanotubes thereon. The carbon nanotube growth conditions can convert the catalyst precursor into a catalyst that is operable for growing carbon nanotubes. The carbon fiber substrate can remain stationary or be transported while the carbon nanotubes are being grown. Optionally, the carbon fiber substrates can include a barrier coating and/or be free of a sizing agent. Carbon fiber substrates having carbon nanotubes grown thereon are also described.Type: GrantFiled: September 13, 2011Date of Patent: August 26, 2014Assignee: Applied NanoStructured Solutions, LLCInventors: Brandon K. Malet, Tushar K. Shah
-
Patent number: 8815168Abstract: A carbon nanotube synthesizing apparatus in which the state of generated plasma can be stabilized is provided. A carbon nanotube synthesizing apparatus 1 comprises a chamber 2, an antenna 3 including a tip 3a, a microwave conductor 4, a gas introducing unit 5, a gas discharging unit 6, a substrate holding unit 7, and a heating unit 8. The shape of the inner wall of the chamber 2 is symmetrical with respect to the tip 3a of the antenna 3.Type: GrantFiled: March 9, 2013Date of Patent: August 26, 2014Assignees: Honda Motor Co., Ltd., Waseda UniversityInventors: Hiroshi Kawarada, Toshiyuki Ohashi, Masahiro Ohta, Ryogo Kato, Toshio Tokune, Hidefumi Nikawa
-
Publication number: 20140227211Abstract: Methods of ex situ synthesis of graphene, graphene oxide, reduced graphene oxide, other graphene derivative structures and nanoparticles useful as polishing agents are disclosed. Compositions and methods for polishing, hardening, protecting, adding longevity to, and lubricating moving and stationary parts in devices and systems, including, but not limited to, engines, turbos, turbines, tracks, races, wheels, bearings, gear systems, armor, heat shields, and other physical and mechanical systems employing machined interacting hard surfaces through the use of nano-polishing agents formed in situ from lubricating compositions and, in some cases, ex situ and their various uses are also disclosed.Type: ApplicationFiled: April 29, 2014Publication date: August 14, 2014Applicant: Peerless Worldwide, LLCInventor: Richard S. Shankman
-
Publication number: 20140227481Abstract: Provided is a structure for forming carbon nanofiber, including a base material containing an oxygen ion-conductive oxide, and a metal catalyst that is provided on one surface side of the base material.Type: ApplicationFiled: March 13, 2014Publication date: August 14, 2014Applicant: FUJIKURA LTD.Inventor: Masayasu INAGUMA
-
Publication number: 20140212353Abstract: Apparatus to produce carbon nanotubes (CNTs) of arbitrary length using a chemical vapor deposition (CVD) process reactor furnace is described, where the CNTs are grown axially along a portion of the length of the furnace. The apparatus includes a spindle and a mechanism for rotating the spindle. The spindle located within a constant temperature region of the furnace and operable to collect the CNT around the rotating spindle as the CNT is grown within the furnace.Type: ApplicationFiled: March 19, 2014Publication date: July 31, 2014Applicant: THE BOEING COMPANYInventors: Keith Daniel Humfeld, Venkatacha Parameswaran
-
Patent number: 8791395Abstract: An embodiment of the present disclosure relates to a heating device comprising a carbon nanotube, which comprises a carbon nanotube layer containing aligned carbon nanotube carpet, a first electrode and a second electrode having a predetermined distance between each other and electrically connected to the carbon nanotube layer respectively, wherein a current produced by applying a voltage to the first electrode passes laterally via the diameter direction of the aligned carbon nanotubes from the first electrode to the second electrode. The present disclosure also includes methods for manufacturing the aligned carbon nanotube carpet.Type: GrantFiled: April 5, 2012Date of Patent: July 29, 2014Assignee: National Taiwan UniversityInventors: Shuo-Hung Chang, Chih-Chung Su
-
Patent number: 8784937Abstract: Methods for growing carbon nanotubes on glass substrates, particularly glass fiber substrates, are described herein. The methods can include depositing a catalytic material or a catalyst precursor on a glass substrate; depositing a non-catalytic material on the glass substrate prior to, after, or concurrently with the catalytic material or catalyst precursor; and exposing the glass substrate to carbon nanotube growth conditions so as to grow carbon nanotubes thereon. The glass substrate, particularly a glass fiber substrate, can be transported while the carbon nanotubes are being grown thereon. Catalyst precursors can be converted into a catalyst when exposed to carbon nanotube growth conditions. The catalytic material or catalyst precursor and the non-catalytic material can be deposited from a solution containing water as a solvent. Illustrative deposition techniques include, for example, spray coating and dip coating.Type: GrantFiled: September 12, 2011Date of Patent: July 22, 2014Assignee: Applied NanoStructured Solutions, LLCInventors: Brandon K. Malet, Tushar K. Shah
-
Patent number: 8771627Abstract: A subject of the present invention is a process for producing carbon nanotubes, the process comprising: a) the synthesis of alcohol(s) by fermentation of at least one vegetable matter and optionally the purification of the product obtained; b) the dehydration of the alcohol or alcohols obtained in a) in order to produce, in a first reactor, a mixture of alkene(s) and water and optionally the purification of the product obtained; c) the introduction, in particular the introduction into a fluidized bed, in a second reactor, of a powdery catalyst at a temperature ranging from 450 to 850° C.Type: GrantFiled: April 4, 2008Date of Patent: July 8, 2014Assignee: Arkema FranceInventors: Serge Bordere, Daniel Cochard, Eric Dutilh, Patrice Gaillard, André Lozowski, Dominique Plee
-
Patent number: 8759810Abstract: A phase change memory device that utilizes a nanowire structure. Usage of the nanowire structure permits the phase change memory device to release its stress upon amorphization via the minimization of reset resistance and threshold resistance.Type: GrantFiled: September 24, 2010Date of Patent: June 24, 2014Assignee: The Trustees Of The University Of PennsylvaniaInventors: Ritesh Agarwal, Mukut Mitra, Yeonwoong Jung
-
Patent number: 8758716Abstract: An atmosphere of a carbon source comprising an oxygenic compound is brought into contact with a catalyst with heating to yield single-walled carbon nanotubes. The carbon source comprising an oxygenic compound preferably is an alcohol and/or ether. The catalyst preferably is a metal. The heating temperature is preferably 500 to 1,500° C. The single-walled carbon nanotubes thus obtained contain no foreign substances and have satisfactory quality with few defects.Type: GrantFiled: February 17, 2012Date of Patent: June 24, 2014Assignees: Toudai Tlo, Ltd., Toray Industries, IncInventors: Shigeo Maruyama, Masahito Yoshikawa
-
Publication number: 20140170317Abstract: Aspects of the invention are directed to a method of forming a film on a substrate. The substrate and a solid carbon source are placed into a reactor. Subsequently, both the substrate and the solid carbon source are heated. Optionally, one or more process gases may be introduced into the reactor to help drive the formation of the film. The film comprises graphene.Type: ApplicationFiled: December 17, 2012Publication date: June 19, 2014Applicant: BLUESTONE GLOBAL TECH LIMITEDInventors: Xuesong Li, Hao Ning