Abstract: A supported catalyst for synthesizing multi-walled carbon nanotubes includes a supporting body and a metal catalyst including Fe, Co, and Mn in a mole ratio according to Equation (1): Fe:Co:Mn=1:x:y??(1) wherein 2.0?x?4.0 and 0.01?y?5.00. The supported catalyst can be prepared by dissolving the metal catalysts into a solvent to prepare an aqueous solution of the metal catalysts; dissolving supporting body materials into a solvent to prepare an aqueous solution of the supporting body material; mixing the aqueous solutions and heating the mixed solution at temperature of about 100° to about 800° C. under normal atmospheric pressure for about 10 to about 40 min. Multi-walled carbon nanotubes can be prepared by placing the supported catalyst in chemical vapor deposition (TCVD) equipment and feeding hydrocarbon gas and hydrogen gas at a temperature of about 650° to about 1,100° C. under normal atmospheric pressure.

Abstract: A method of making a carbon nanopipe and ensemble of carbon nanopipes, comprising the steps of flowing a carbon precursor over silica fibers and thereby depositing a durable graphitizable carbon coating of tunable thickness of about 10-500 nm onto the silica fibers and etching away the silica fibers to yield a three-dimensional mat of electronically networked, hollow carbon tubules. A carbon nanopipe comprising a durable graphitizable carbon wall of tunable thickness of about 10-500 nm formed by exposing a silica fiber network to a carbon precursor vapor and thereby depositing a carbon film onto the silica fiber network at a temperature suitable for complete pyrolysis of the carbon precursor and removing the silica fibers.

Abstract: Methods for growing microstructured and nanostructured graphene by growing the microstructured and nanostructured graphene from the bottom-up directly in the desired pattern are provided. The graphene structures can be grown via chemical vapor deposition (CVD) on substrates that are partially covered by a patterned graphene growth barrier which guides the growth of the graphene.

Abstract: In a process for fabricating a nanopore device, at least one carbon nanotube catalyst region is formed on a structure. A plurality of nanopores is formed in the structure at a distance from the catalyst region that is no greater than about an expected length for a carbon nanotube synthesized from the catalyst region. Then at least one carbon nanotube is synthesized from the catalyst region. This fabrication sequence enables the in situ synthesis of carbon nanotubes at the site of nanopores, whereby one or more nanotubes articulate one or more nanopores without requiring manual positioning of the nanotubes.

Abstract: A carbon nanotube production method forms a carbon nanotube aggregate having a high perpendicular orientation characteristic where a plurality of carbon nanotubes are aligned in a direction perpendicular to a surface of a substrate, without using terpineol, which is a viscosity improver. A catalyst solution having a predetermined concentration (from 0.2 M to 0.8 M) of a transition metal salt dissolved therein, and free of terpineol is prepared. Catalyst particles are caused to be present on the surface of the substrate by making the catalyst solution contact with the surface of the substrate. By making a carbon nanotube forming gas contact with the surface of the substrate in a carbon nanotube forming temperature region, the carbon nanotube aggregate is grown on the surface of the substrate where a plurality of carbon nanotubes are aligned in the direction perpendicular to the surface of the substrate.

Abstract: A graphene dot structure and a method of manufacturing the same. The graphene dot structure includes a core including a semiconductor material; and a graphene shell formed on the surface of the core. The graphene dot structure may form a network.

Abstract: According to one embodiment, there is provided a graphite nano-carbon fiber provided by using an apparatus having a reactor capable of keeping a reducing atmosphere inside thereof, a metal substrate arranged as a catalyst in the reactor, a heater heating the metal substrate, a pyrolysis gas source supplying pyrolysis gas obtained by thermally decomposing a wood material in a reducing atmosphere to the reactor, a scraper scraping carbon fibers produced on the metal substrate, a recovery container recovering the scraped carbon fibers, and an exhaust pump discharging exhaust gas from the reactor. The carbon fibers are linear carbon fibers with a diameter of 25 to 250 nm formed with layers of graphenes stacked in a longitudinal direction.

Abstract: A deposition method of fine particles, includes the steps of irradiating a fine particle beam formed by size-classified fine particles to an irradiated subject under a vacuum state, and depositing the fine particles on a bottom part of a groove structure formed at the irradiated subject.

Abstract: A system includes a reusable substrate upon which a carbon nanostructure is formed as a carbon nanostructure-laden reusable substrate, a first conveyor system adapted to continuously convey the reusuable substrate through a carbon nanotube catalyst application station and carbon nanostructure growth station, and a second conveyor system adapted to create an interface between a second substrate and the carbon nanostructure-laden reusuable substrate, the interface facilitating transfer of a carbon nanostructure from the carbon nanostructure-laden reusuable substrate to the second substrate. A method includes growing a carbon nanostructure on a reusable substrate, the carbon nanostructure includes a carbon nanotube polymer having a structural morphology comprising interdigitation, branching, crosslinking, and shared walls and transferring the carbon nanostructure to a second substrate to provide a carbon nanostructure-laden second substrate.

Abstract: Provided are a graphene pattern and a process of preparing the same. Graphene is patterned in a predetermined shape on a substrate to form the graphene pattern. The graphene pattern can be formed by forming a graphitizing catalyst pattern on a substrate, contacting a carbonaceous material with the graphitizing catalyst and heat-treating the resultant.

Abstract: Process for producing nanomaterials such as graphenes, graphene composites, magnesium oxide, magnesium hydroxides and other nanomaterials by high heat vaporization and rapid cooling. In some of the preferred embodiments, the high heat is produced by an oxidation-reduction reaction of carbon dioxide and magnesium as the primary reactants, although additional materials such as reaction catalysts, control agents, or composite materials can be included in the reaction, if desired. The reaction also produces nanomaterials from a variety of other input materials, and by varying the process parameters, the type and morphology of the carbon nanoproducts and other nanoproducts can be controlled. The reaction products include novel nanocrystals of MgO (percilase) and MgAl2O4 (spinels) as well as composites of these nanocrystals with multiple layers of graphene deposited on or intercalated with them.

Abstract: The present disclosure relates to a method for making a carbon nanotube carbon nanotube structure. The method includes steps of providing a tubular carbon nanotube array; and drawing out a carbon nanotube structure from the tubular carbon nanotube array by using a drawing tool. The carbon nanotube structure is a carbon nanotube film or a carbon nanotube wire.

Abstract: Methods and apparatus for controlling a catalytic layer deposition process are provided. A feed stream comprising a carbon source is provided to a catalyst layer. An asymmetrical alternating current is applied to the catalyst layer. A polarization impedance of the catalyst layer is monitored. The polarization impedance can be controlled by varying the asymmetrical alternating current. The controlling of the polarization impedance provides control over the structure and amount of carbon particles deposited on the catalyst layer. The carbon particles may be in the form of nanotubes, fullerenes, and/or nanoparticles.

Abstract: The method of forming carbon nanotubes from carbon-rich fly ash is a chemical vapor deposition-based method for forming carbon nanotubes from recycled carbon-rich fly ash. The method includes first ultrasonically treating the carbon-rich fly ash to produce an ultrafine powdered ash, and then reacting the ultrafine powdered ash in a low pressure chemical vapor deposition reactor to form the carbon nanotubes. The ultrasonic treatment of the carbon-rich fly ash includes the steps of dissolving the carbon-rich fly ash in water to form a solution, then sonicating the solution, separating the ultrafine powdered ash from the solution, and finally drying the ultrafine powdered ash. The method provides for total conversion of the carbon-rich fly ash to carbon nanotubes having a variety of differing diameters and lengths, including multi-walled carbon nanotubes with a high degree of wall graphitization and C?C double bonds stretching at 1635 cm?1.

Abstract: A system for use in fabrication of carbon nanotubes (CNTs) includes a wafer having a circuitry and a plurality of CNT seed sites. The system also includes a base assembly configured to support the wafer. The system further includes a first tube disposed over the wafer and configured to surround the CNTs that form on the seed sites. The circuitry in the wafer is configured to conduct at least one static charge. The wafer includes a top surface having a plurality of CNT seed sites, each seed site coupled to the circuitry and configured to receive one of the at least one static charge.

Abstract: An embodiment of the present disclosure relates to a heating device comprising a carbon nanotube, which comprises a carbon nanotube layer containing aligned carbon nanotube carpet, a first electrode and a second electrode having a predetermined distance between each other and electrically connected to the carbon nanotube layer respectively, wherein a current produced by applying a voltage to the first electrode passes laterally via the diameter direction of the aligned carbon nanotubes from the first electrode to the second electrode. The present disclosure also includes methods for manufacturing the aligned carbon nanotube carpet.

Abstract: A method for producing a carbon fiber, comprising a step of dissolving or dispersing [I] a compound containing Co element; [II] a compound containing at least one element selected from the group consisting of Ti, V, Cr, and Mn; and [III] a compound containing at least one element selected from the group consisting of W and Mo in a solvent to obtain a solution or a fluid dispersion, a step of impregnating a particulate carrier with the solution or the fluid dispersion to prepare a catalyst, and a step of bringing a carbon source into contact with the catalyst in a vapor phase.

Abstract: An apparatus for growing carbon nanostructures (CNSs) on a substrate can include at least two CNS growth zones with at least one intermediate zone disposed therebetween and a substrate inlet before the CNS growth zones sized to allow a spoolable length substrate to pass therethrough.

Abstract: A novel carbon nanotube powder containing carbon nanotubes which have a roll-like structure, also novel carbon nanotubes having a roll-like structure, novel processes for the production of the carbon nanotube powders and of the carbon nanotubes, and their use as an additive or substrate for various applications are described.

Abstract: An R-cut substrate is prepared by cutting lumbered synthetic quartz crystal along a surface parallel to the R-face. The surface of the thus obtained R-cut substrate has a structure in which the R-face smoothest in terms of the crystal structure accounts for the most part of the surface, and the m- and r-faces are exposed on this surface to extend in a direction parallel to the X-axis albeit only slightly upon processing. After catalytic metals are arranged on the surface of the R-cut substrate, a carbon source gas is supplied onto the surface of the R-cut substrate to grow carbon nanotubes in accordance with the crystal lattice structure using the crystal metals as nuclei. This makes it possible to manufacture carbon nanotubes with a good orientation and linearity.

Abstract: A method for forming carbon nanotubes includes preparing a target object having a surface on which one or more openings are formed, each of the openings having a catalyst metal layer on a bottom thereof; performing an oxygen plasma process on the catalyst metal layers; and activating the surfaces of the catalyst metal layers by performing a hydrogen plasma process on the metal catalyst layers subjected to the oxygen plasma process. The method further includes filling carbon nanotubes in the openings on the target object by providing an electrode member having a plurality of through holes above the target object in a processing chamber, and then growing the carbon nanotubes by plasma CVD on the activated catalyst metal layer by diffusing active species in a plasma generated above the electrode member toward the target object through the through holes while applying a DC voltage to the electrode member.

Abstract: Methods and systems of preparing a catalyst to be used in the synthesis of carbon nanotubes through Chemical Vapor Depositions are disclosed. The method may include a mixture comprising at least one of an iron catalyst source and a catalyst support. In another aspect, a method of synthesizing multi-walled carbon nanotubes using the catalyst is disclosed. The method may include driving a reaction in a CVD furnace and generating at least one multi-walled carbon nanotube through the reaction. The method also includes depositing the catalyst on the CVD furnace and driving a carbon source with a carrier gas to the CVD furnace. The method further includes decomposing the carbon source in the presence of the catalyst under a sufficient gas pressure for a sufficient time to grow at least one multi-walled carbon nanotube.

Abstract: A semiconductor structure includes a support and at least one block provided on the support. The block includes a stack including alternating layers based on a first semiconductor material and layers based on a second semiconductor material different from the first material, the layers presenting greater dimensions than layers such that the stack has a lateral tooth profile and a plurality of spacers filling the spaces formed by the tooth profile, the spacers being made of a third material different from the first material such that each of the lateral faces of the block presents alternating lateral bands based on the first material and alternating lateral bands based on the third material. At least one of the lateral faces of the block is partially coated with a material promoting the growth of nanotubes or nanowires, the catalyst material exclusively coating the lateral bands based on the first material or exclusively coating the lateral bands based on the third material.

Abstract: Mass production of carbon nanotubes (CNT) are facilitated by methods and apparatus disclosed herein. Advantageously, the methods and apparatus make use of a single production unit, and therefore provide for uninterrupted progress in a fabrication process. Embodiments of control systems for a variety of CNT production apparatus are included.

Abstract: The present invention provides arrays of longitudinally aligned carbon nanotubes having specified positions, nanotube densities and orientations, and corresponding methods of making nanotube arrays using guided growth and guided deposition methods. Also provided are electronic devices and device arrays comprising one or more arrays of longitudinally aligned carbon nanotubes including multilayer nanotube array structures and devices.

Abstract: The present invention relates to cobalt and molybdenum doped mesoporous silica catalysts and methods for using the catalysts to making Single-Walled Carbon Nanotubes. The methods offer increased control over the orientation, length and diameter of the nanotubes produced.

Abstract: A thermal and electrical conducting apparatus includes a few-layer graphene film having a thickness D where D?1.5 nm and a plurality of carbon nanotubes crystallographically aligned with the few-layer graphene film.

Abstract: Disclosed herein is a method of growth of enhanced adhesion MWCNTs on a substrate, referred to as the HGTiE process, the method comprising: chemical vapor deposition of an adhesive underlayer composed of alumina on a substrate composed of titanium or similar; chemical vapor deposition of a catalyst such as a thin film of iron on top of the adhesive underlayer; pretreatment of the substrate to hydrogen at high temperature; and exposure of the substrate to a feedstock gas such as ethylene at high temperature. The substrate surface may be roughened before placement of an adhesive layer through mechanical grinding or chemical etching. Finally, plasma etching of the MWCNT film may be performed with oxygen plasma. This method of growth allows for high strength adhesion of MWCNTs to the substrate the MWCNTs are grown upon.

Abstract: We disclose a novel filter and process that converts the wastes in automotive exhausts into carbon nanotubes. The filter surface is composed of iron of similar catalyst. The filter is placed along the pathway of exhaust streamlines preferably at an angle of more than 5°. and less than 15°. The filter is heated to temperatures in the range of 200-1000° C. The filter described in this invention can work in its own or supplement existing filtration systems. The end product of this filtration system is a material that is commercially valuable. The synthesized carbon nanotubes are purified using ionic liquid solution that is capable of removing undesirable carbonated material and leaving 95% purified carbon nanotubes. The purified carbon nanotubes have a diameter of 20-50 nm and a length of 1-10 micro meters.

Abstract: Techniques, apparatus and systems are described for wafer-scale processing of aligned nanotube devices and integrated circuits. In one aspect, a method can include growing aligned nanotubes on at least one of a wafer-scale quartz substrate or a wafer-scale sapphire substrate. The method can include transferring the grown aligned nanotubes onto a target substrate. Also, the method can include fabricating at least one device based on the transferred nanotubes.

Abstract: The present invention relates to a process comprising the steps a) synthesis of carbon nanotubes, b) optional inerting and c) cooling of the product. The process permits problem-free handling and packing of the carbon nanotube material that is produced.

Abstract: Provided is a graphene production method including: contacting a carbon source substance with a surface of a flexible film-forming target having electrical conductivity; and applying a current to the film-forming target and heating the film-forming target at a temperature exceeding a graphene production temperature to produce graphene from the carbon source substance on the surface of the film-forming target.

Abstract: Embodiments of the present invention are generally directed to a method for disposing nanoparticles on a substrate. In one embodiment, a substrate having a plurality of recesses is provided. In this embodiment, a plurality of nanoparticles is also provided. The nanoparticles include a catalyst material coupled to one or more ligands, and these nanoparticles are disposed within respective recesses of the substrate. In some embodiments, the substrate is processed to form nanostructures, such as nanotubes or nanowires, within the recesses. Devices and systems having such nanostructures are also disclosed.

Abstract: A thermal and electrical conducting apparatus includes a few-layer graphene film having a thickness D where D?1.5 nm and a plurality of carbon nanotubes crystallographically aligned with the few-layer graphene film.

Abstract: A device for making a carbon nanotube film includes a substrate and a catalyst layer on the substrate. The catalyst layer has two substantially parallel sides. The present disclosure also provides a method for making a carbon nanotube film. The catalyst layer is annealed at a high temperature in air. The annealed catalyst layer is heated up to a predetermined reaction temperature in a furnace with a protective gas therein. A carbonaceous gas is supplied into the furnace to grow a carbon nanotube array having two substantially parallel side faces. A carbon nanotube film is drawn from the carbon nanotube array. A drawing direction is substantially parallel to the two substantially parallel side faces of the carbon nanotube array.

Abstract: An improved method of synthesizing nanotubes that avoids the slow process and the impurities or defects that are usually encountered with regard to as-grown carbon nanotubes. In a preferred embodiment, nanotubes are synthesized from nanotubes providing a novel catalyst-free growth method for direct growth of single- or multi-walled, metallic or semiconducting nanotubes.

Abstract: The present invention provides arrays of longitudinally aligned carbon nanotubes having specified positions, nanotube densities and orientations, and corresponding methods of making nanotube arrays using guided growth and guided deposition methods. Also provided are electronic devices and device arrays comprising one or more arrays of longitudinally aligned carbon nanotubes including multilayer nanotube array structures and devices.

Abstract: A production method in accordance with the present invention includes the steps of: providing a catalyst support layer by applying, to a substrate, a catalyst support layer coating agent obtained by dissolving in an organic solvent (i) an organometallic compound containing aluminum and/or a metal salt containing aluminum and (ii) a stabilizer for inhibiting a condensation polymerization reaction of the organometallic compound and/or the metal salt; providing a catalyst formation layer by applying, to the catalyst support layer, a catalyst formation layer coating agent obtained by dissolving in an organic solvent (a) an organometallic compound containing iron and/or a metal salt containing iron and (b) a stabilizer for inhibiting a condensation polymerization reaction of the organometallic compound and/or the metal salt; and growing an aligned carbon nanotube aggregate on the substrate by chemical vapor deposition (CVD).

Abstract: Provided are aligned carbon nanotubes for a fuel cell having a large surface area, a nanocomposite that includes the aligned carbon nanotubes loaded with highly dispersed nanoparticles of a metallic catalyst, methods of producing the carbon nanotubes and the nanocomposite, and a fuel cell including the nanocomposite. In the nanocomposite, nanoparticles of the metallic catalyst are uniformly distributed on external walls of the nanotubes. A fuel cell including the nanocomposite exhibits better performance.

Abstract: Provided is an apparatus for producing carbon nanotubes. The apparatus includes a reaction chamber and a rotating member. The reaction chamber provides a reaction space in which metal catalysts and a source gas react with one another to produce carbon nanotubes. The rotating member increases fluidizing of the metal catalysts in the reaction space to increase productivity and raise the gas conversion rate, thereby reducing the price of carbon nanotubes and preventing adhering of metal catalysts to the sidewall of the reaction chamber.

Abstract: An ultracapacitor includes at least one electrode that includes carbon nanotubes. The carbon nanotubes may be applied in a variety of ways, and a plurality of layers may be included. Methods of fabrication of carbon nanotubes and ultracapacitors are provided.

Abstract: Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C2H2, CH4, or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).

Abstract: A method of growing carbon nanomaterials on a substrate wherein the substrate is exposed to an oxidizing gas; a seed material is deposited on the substrate to form a receptor for a catalyst on the surface of said substrate; a catalyst is deposited on the seed material by exposing the receptor on the surface of the substrate to a vapor of the catalyst; and substrate is subjected to chemical vapor deposition in a carbon containing gas to grow carbon nanomaterial on the substrate.

Abstract: A method for fabricating a carbon nanotube film includes the following steps: providing a vacuum chamber having a carbon nanotube array therein; and pulling a carbon nanotube film out from the carbon nanotube array.

Abstract: A plurality of nanowires is grown on a first substrate in a first direction perpendicular to the first substrate. An insulation layer covering the nanowires is formed on the first substrate to define a nanowire block including the nanowires and the insulation layer. The nanowire block is moved so that each of the nanowires is arranged in a second direction parallel to the first substrate. The insulation layer is partially removed to partially expose the nanowires. A gate line covering the exposed nanowires is formed. Impurities are implanted into portions of the nanowires adjacent to the gate line.

Abstract: An aligned carbon nanotube bulk structure in which various properties such as density and hardness are controlled depending on the place is provided. An aligned carbon nanotube bulk structure having different density portions is an aligned carbon nanotube bulk structure provided with a high-density portion applied with a density-increasing treatment and an low-density portion and having a plurality of carbon nanotubes (CNT) aligned in a predetermined direction, in which the structure has 1:3 or more of the degree of anisotropy in the alignment direction and in the direction vertical to the alignment direction and, in the (002) peak of the X-ray diffraction data in the high density region, the intensity of X-ray incident along the orientation direction is higher than that of the X-ray intensity from the direction vertical to the alignment direction, and the degree of alignment is defined by specific conditions.

Abstract: A carbon nanotube structure includes a number of carbon wires and a number of second carbon nanotubes. Each of the carbon nanotube wires includes a number of first carbon nanotubes joined end to end by the carbon-carbon bonds therebetween. The carbon wires and the carbon nanotubes are joined by van der Waals attractive force therebetween.

Abstract: Disclosed are a carbon nanotube composite and a method for making the same advantageous for achieving a higher density of a carbon nanotube assembly. The carbon nanotube composite includes a substrate and a carbon nanotube assembly mounted on the surface of the substrate. The carbon nanotube assembly is composed of multiple carbon nanotubes arranged densely in parallel oriented in the direction upward from the surface of the substrate. The carbon nanotube assembly has a density of 70 mg/cm3 or more in a grown state.

Abstract: The present invention is provided with a reaction apparatus (12) that supplies carbon raw material (11) and fine particles (50) to cause carbon nanofibers to grow on surfaces of the fine particles (50), a heating apparatus (20) that heats the reaction apparatus 12, a recovery line (23) that recovers fine particles on which the carbon nanofibers have grown from the reaction apparatus, and a carbon nanofiber separating apparatus (24) that separates carbon nanofibers (52) from the recovered fine particles on which carbon nanofibers have been grown.

Abstract: A device and method for device fabrication includes forming a buried gate electrode in a dielectric substrate and patterning a stack comprising a high dielectric constant layer, a carbon-based semi-conductive layer and a protection layer over the buried gate electrode. An isolation dielectric layer formed over the stack is opened to define recesses in regions adjacent to the stack. The recesses are etched to form cavities and remove a portion of the high dielectric constant layer to expose the carbon-based semi-conductive layer on opposite sides of the buried gate electrode. A conductive material is deposited in the cavities to form self-aligned source and drain regions.