Nucleic Acid Memory Patents (Class 977/946)
  • Patent number: 8557622
    Abstract: Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned substrate, which are more favorable than vertical ones for device processing and three-dimensional (3D) integrated circuits. In embodiments, the in-plane nanowire can be formed by selective epitaxy utilizing lateral overgrowth and faceting of an epilayer initially grown in a one-dimensional (1D) nanoscale opening. In embodiments, optical, electrical, and thermal connections can be established and controlled between the nanowire, the substrate, and additional electrical or optical components for better device and system performance.
    Type: Grant
    Filed: September 1, 2011
    Date of Patent: October 15, 2013
    Assignee: STC.UNM
    Inventors: Seung Chang Lee, Steven R. J. Brueck
  • Patent number: 8183648
    Abstract: The present invention relates to a method and apparatus for enhancing the electron transport property measurements of a molecule when the molecule is placed between chemically functionalized carbon-based nanoscopic electrodes to which a suitable voltage bias is applied. The invention includes selecting a dopant atom for the nanoscopic electrodes, the dopant atoms being chemically similar to atoms present in the molecule, and functionalizing the outer surface and terminations of the electrodes with the dopant atoms.
    Type: Grant
    Filed: January 26, 2009
    Date of Patent: May 22, 2012
    Assignee: UT-Battelle, LLC
    Inventors: Predrag S. Krstic, Vincent Meunier
  • Publication number: 20110253217
    Abstract: Disclosed are methods of using magnetic or electric fields to align magnetically responsive nanoparticles in a polymeric matrix, which has not yet been completely solidified. The nanoparticles are preferably magnetically doped, then blended with photovoltaic polymer material to form devices. The methods provided are particularly useful for the formation of solar cell devices. The devices include nanostructured electron-conducting channels arranged approximately parallel to one another, where the channels comprise magnetically doped materials, as well as photovoltaic materials interspersed with the nanostructured electron-conducting channels. The method provides a way to control the morphology of blended photovoltaic devices, which will improve efficiencies. In addition, the new method provides a way to control the growth of novel, cheap, solar cells, which can in turn lead to enhanced performance.
    Type: Application
    Filed: September 28, 2009
    Publication date: October 20, 2011
    Inventors: Jeffrey C. Grossman, Alexander K. Zettl
  • Patent number: 7659590
    Abstract: The present invention is directed to a memory device having very high storage density capability. In general, the memory device includes an array of individual memory cells which store information that is assigned a value based on the molecular contents of the memory cell. In a preferred embodiment, the molecules utilized for storing information in the memory cells may be single-strand polynucleotides, for instance single-strand oligonucleotides of between about 5 and about 20 monomer units. The present invention is also directed to methods and systems useful for writing and reading the molecular-based memory devices. In particular, the devices may be written and read via modified atomic force microscopy processes.
    Type: Grant
    Filed: March 28, 2005
    Date of Patent: February 9, 2010
    Assignee: Clemson University
    Inventors: Thomas Boland, Thomas E. Wagner