Abstract: An electrically-conductive or insulating non-magnetic intermediate layer is inserted between a free magnetic layer and a pinned magnetic layer in a current-perpendicular-to-the-plane (CPP) structure magnetoresistive element. At least one of the free magnetic layer and the pinned magnetic layer is made of a nitrided magnetic metal alloy. This nitrided magnetic layers allows the CPP structure magnetoresistive element to enjoy an increased magnetoresistance change (?RA). In addition, the saturation magnetic flux density (Bs) decreases in a nitrided magnetic metal alloy. The inversion of magnetization is thus easily caused in the low Bs magnetic layer. The detection sensitivity of the CPP structure magnetoresistive element is improved. The CPP structure magnetoresistive element is thus allowed to detect magnetic bit data with higher accuracy.

Abstract: The device comprises two magnetoresistive elements (10, 20) placed relative to each other in magnetostatic interaction in such a manner that a magnetic flux passing between these elements (10, 20) closes through soft ferromagnetic layers (26, 27) of said elements (10, 20). A write device (15) is associated with the elements (10, 20) to control the magnetization of each soft layer (26, 27). A read conductor line (11, 12, 13, 14) is associated with each magnetoresistive element (10, 20) to detect the magnetic state of the soft layer (26, 27) by measuring the corresponding magnetoresistance. The soft ferromagnetic layers (26, 27) of the elements (10, 20) remain oriented substantially in antiparallel relative to each other, while the hard ferromagnetic layers (24) of said elements (10, 20) are oriented substantially in parallel.

Abstract: A magnetic recording medium includes a disk substrate, and recording cells arrayed on the disk substrate in a track direction, the recording cells includes a ferromagnetic pattern and a magnetic pattern formed on one of two sidewalls of the ferromagnetic pattern in the track direction and having a lower crystalline magnetic anisotropy constant Ku than that of the ferromagnetic pattern.

Abstract: The read-head is capable of corresponding to high recording density without deteriorating characteristics even if a small size read-element is used. The read-head of the present invention comprises: a read-element including a free layer; and a magnetic domain control layer for domain-controlling the free layer. The magnetic domain control layer is composed of a soft magnetic material including at least one substance selected from the group consisting of Fe, Co and Ni. A ratio (a/b) of a length (a) of the magnetic domain control layer in the core width direction to a length (b) thereof in the height direction is 5 or more, and the length (b) is 100 nm or less.

Abstract: Disclosed herein is a position sensor including, a magnetic recording medium including two incremental layers and an absolute layer, the absolute layer provided between the incremental layers, each of the layers having magnetic information recorded therein, and a magnetic detection section including three magnetoresistance effect devices opposite to the layers of the magnetic recording medium, being moved relative to the magnetic recording medium in the extending direction of the layers, and being operative to detect the magnetic information in the layers by the magnetoresistance effect devices.

Abstract: There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.

Abstract: MR devices and associated methods of fabrication are disclosed. An MR device includes an MR element and a bias structure on either side of the MR element for biasing a free layer of the MR element. The bias structure includes an amorphous buffer layer, a first seed layer formed from Cr, a second seed layer formed from a non-magnetic Cr alloy, and a hard bias magnetic layer. The second seed layer formed from the non-magnetic Cr alloy is formed between the Cr seed layer and the hard bias magnetic layer. An example of a non-magnetic Cr alloy is Chromium-Molybdenum (CrMo).

Abstract: A ferromagnetic tunnel junction element is a magnetoresistance effect element wherein an electric resistance varies in accordance with a magnetic field applied. The ferromagnetic tunnel junction element includes a pinned layer wherein at least a part of a magnetization direction is held, and an insulation layer formed on the pinned layer, creating an energy barrier that electrons can flow through by a tunnel effect. A first free layer made of a first ferromagnetic material containing boron atoms, is formed on the insulation layer. In the first free layer, a direction of the magnetization switches under an influence of an external magnetic field. A second free layer made of a first ferromagnetic material containing boron atoms, is formed on the first free layer. The direction of magnetization of the second free layer switches under the influence of the external magnetic field, exchanging and coupling with the first free layer.

Abstract: A magnetic sensor includes a magnetoresistance element having a peak of a thermal fluctuation strength of magnetization under a magnetic field having a certain frequency, a frequency filter connected to the magnetoresistance element and having its transmittance decreased or increased in substantially the frequency of the magnetic field to output a signal corresponding substantially to the peak of the thermal fluctuation strength of magnetization, and a detector connected to the frequency filter to detect the magnetic field based on the signal of the frequency filter.

Abstract: A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.

Abstract: A magnetic sensor includes a magnetoresistance element having a peak of a thermal fluctuation strength of magnetization under a magnetic field having a certain frequency, a frequency filter connected to the magnetoresistance element and having its transmittance decreased or increased in substantially the frequency of the magnetic field to output a signal corresponding substantially to the peak of the thermal fluctuation strength of magnetization, and a detector connected to the frequency filter to detect the magnetic field based on the signal of the frequency filter.

Abstract: The present invention provides a magnetic recording medium having superior startup operation and durability as well as satisfactory surface lubricity. The present invention relates to a method of manufacturing a magnetic recording medium in which at least a magnetic layer, a protective film layer and a lubricant layer are sequentially laminated on a non-magnetic substrate, wherein the lubricant layer is surface treated using a gas activated by plasma generated at a pressure in the vicinity of atmospheric pressure. The present invention also relates to a magnetic recording medium produced according to the aforementioned manufacturing method.

Abstract: A magnetoresistive element includes a first electrode layer, a first fixed layer provided on the first electrode layer and having a fixed magnetization direction, a first intermediate layer provided on the first fixed layer and made of a metal oxide, a free layer provided on the first intermediate layer and having a variable magnetization direction, and a second electrode layer provided on the free layer. At least one of the first electrode layer and the second electrode layer contains a conductive metal oxide.

Abstract: An aspect of the present invention relates to a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on one surface of a nonmagnetic support and a backcoat layer on the other surface of the nonmagnetic support, wherein a number of indentations equal to or greater than 20 nm in depth present on the magnetic layer surface is equal to or less than 100/10,000 ?m2, a sol component ratio in the magnetic layer is equal to or less than 5.0 percent, and the support has an amount of heat absorption based on enthalpy relaxation ranging from 0.5 J/g to 2.0 J/g, and a glass transition temperature Tg ranging from 110° C. to 140° C. The present invention further relates to a method of reproducing magnetic signals and magnetic signal reproduction system in which the magnetic recording medium is employed.

Abstract: According to an aspect of an embodiment, a head slider includes: a slider substrate; and an operating unit arranged on the slider substrate, the operating unit having a pair of electrodes and a piezoelectric component arranged between the pair of electrodes, the pair of electrodes being constituted by a first electrode and a second electrode, in which the product of the Young's modulus and the thickness of the first electrode in the direction from the first electrode to the second electrode is larger than the product of the Young's modulus and the thickness of the second electrode in the direction from the first electrode to the second electrode. The head slider further includes a magnetic head arranged on the slider substrate with the operating unit, opposite to the slider substrate.

Abstract: A method for setting a voltage (Vsub) of a substrate to about a voltage (Vshield) of a shield of at least one reader formed above the substrate is presented in one embodiment. The method includes passing an MR bias current through each MR sensor of at least one reader formed above a substrate; and setting a voltage (Vsub) of the substrate to about the voltage (Vshield) of a shield of the at least one reader. A method according to another embodiment includes passing a bias current through at least one reader formed above a substrate, the at least one reader further comprising a shield and a magnetoresistive (MR) sensor, the substrate being at about a voltage (Vsub); and operatively adjusting a voltage (Vshield) of the shield of the at least one reader to about match the Vsub. Additional methods are also presented.

Abstract: It is made possible to provide a magnetic head that generates a sufficient high-frequency magnetic field for assisting recording operations, and a magnetic recording device that includes the magnetic head. A magnetic head includes: a recording magnetic pole; a return yoke magnetically coupled to the recording magnetic pole; and at least two spin torque oscillators provided near the recording magnetic pole.

Abstract: Thin film perpendicular magnetic head with a narrow main pole capable of a high recording density in excess of 100 gigabits per square inch and generating a high magnetic recording field, while also being modified to suppress remanent magnetic fields occurring immediately after writing operation. A return path is provided for supplying a magnetic flux to the main pole, and an conductive coil for excitation of the main pole and return path. The main pole has a pole width of 200 nanometers or less, and a magnetic multilayer made up of a high saturation flux density layer and low saturation flux density layer. The low saturation flux density layer and the high saturation flux density suppress remanent magnetization and prevent erasing after writing by utilizing a closed magnetic domain structure in the pole.

Abstract: A magnetic head assembly of the present invention includes a head rail having a plurality of head element portions each including a MR element and sliding portions that come into contact with a magnetic tape, and a protective film on a magnetic tape sliding surface of the head element portions and the sliding portions, wherein the protective film is formed in a portion other than the vicinity of both ends of the head rail in a traveling direction, and an outermost surface of the protective film, on which a magnetic tape is capable of sliding, is formed flat. Thus, a magnetic head assembly used in a magnetic tape apparatus can be provided, in which an output does not decrease due to the abrasion deformation of the head element portions and the increase in spacing by the adhesion of stain.

Abstract: A magnetoresistive effect thin-film magnetic head including a magnetoresistive effect element having a CPP structure in which the gap length can be precisely optimized and a method for fabricating the magnetoresistive effect thin-film magnetic head are provided. The stacked magnetoresistive effect thin-films having the cap layer as the top layer are formed on the bottom shield layer. The soft magnetic layer consisting of any soft magnetic material is then formed on the cap layer, and the micro fabrication process is performed. Subsequently, at least one insulating layer is formed on the stacked magnetoresistive effect thin-films after the micro fabrication process, having the cap layer as the top layer, on which the soft magnetic layer is formed. Then, the soft magnetic layer is exposed by removing a part of the insulating layer formed on the soft magnetic layer and the top shield layer is formed on the surface of the exposed soft magnetic layer.

Abstract: Embodiments of the present invention help to prevent a head characteristic from being deteriorated by re-deposition or damage which occurs when a sensor film is etched, a track width is narrowed, and the head characteristic is stabilized. According to one embodiment, when it is assumed that the thickness of the sensor film on an air bearing surface is T, and a distance between an end of a medium layer that is interposed between a free layer and a pinned layer which comprise the sensor film and an end of the sensor film lowest portion, a relationship of 1.2×T?x?2.5×T is satisfied, and the ends of a pair of magnetic films which are in contact with both sides in the track-width direction through an insulator do not exist in the track central portion from the free layer end.

Abstract: The present invention relates to a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nomnagnetic support. A product, Mr?, of a residual magnetization Mr of the magnetic layer and a thickness ? of the magnetic layer is equal to or greater than 2 mT•?m and equal to or less than 12 mT•?m, a squareness in a perpendicular direction is equal to or greater than 0.4 and equal to or less than 0.7, and a squareness in a longitudinal direction is equal to or greater than 0.3 but less than 0.6.

Abstract: A magnetic memory includes a stack, a first writing wire, and a second writing wire. The stack includes a magnetic pinned layer, a tunnel barrier insulating layer, and a magnetic free layer, so as to form a magnetic tunnel junction (MTJ). The MTJ has an easy axis. The first writing wire is disposed under the stack. The included angle between the first writing wire and the easy axis of the MTJ is smaller than 45 degrees and greater than 0 degrees on a projected plane. The second writing wire is disposed above the stack. The included angle between the second writing wire and the easy axis of the MTJ is smaller than 45 degrees and greater than 0 degrees on the projected plane.

Abstract: A magnetoresistance effect element includes a magnetoresistance effect film including a magnetically pinned layer having a magnetic material film whose direction of magnetization is pinned substantially in one direction, a magnetically free layer having a magnetic material film whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic metal intermediate layer located between said pinned layer and said free layer. The element also includes a pair of electrodes electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. At least one of the pinned layer and the free layer may include a thin-film insertion layer.

Abstract: Embodiments of the present invention help to provide a single element type differential magnetoresistive magnetic head capable of achieving high resolution and high manufacturing stability. According to one embodiment, a magnetoresistive layered film is formed by stacking an underlayer film, an antiferromagnetic film, a ferromagnetic pinned layer, a non-magnetic intermediate layer, a soft magnetic free layer, a long distance antiparallel coupling layered film, and a differential soft magnetic free layer. The long distance antiparallel coupling layered film exchange-couples the soft magnetic free layer and the differential soft magnetic free layer in an antiparallel state with a distance of about 3 nanometers through 20 nanometers. By manufacturing the single element type differential magnetoresistive magnetic head using the magnetoresistive layered film, it becomes possible to achieve the high resolution and the high manufacturing stability without spoiling the GMR effect.

Abstract: Magnetic thin film having high spin polarizability and a magnetoresistance effect device and a magnetic device using the same, provided with a substrate (2) and Co2MGa1-xAlx thin film (3) formed on the substrate (2), the Co2MGa1-xAlx thin film (3) has a L21 or B2 single phase structure, M of the thin film is either one or two or more of Ti, V, Mo, W, Cr, Mn, and Fe, an average valence electron concentration Z in M is 5.5?Z?7.5, and 0?x?0.7, shows ferromagnetism at room temperature, and can attain high spin polarizability. A buffer layer (4) may be inserted between the substrate (2) and the Co2FexCr1-xAl thin film (3). The tunnel magnetoresistance effect device and the giant magnetoresistance effect device using this magnetic thin film can attain large TMR and GMR at room temperature under the low magnetic field.

Abstract: Embodiments of the present invention are directed toward the field of spintronics, and in particular, systems and devices capable of performing spin coherent quantum logic operations. The inventive spin valve comprises two ferromagnetic electrode layers, and a non-magnetic conducting layer positioned therebetween. An external magnetic field B0 is applied in the Z direction, such that the two electrode layers are each magnetized in a direction substantially parallel to the external magnetic field. Rather than attempting to change the magnetization of one of the ferromagnetic layers, as is the case in prior art technologies, it is the direction of the electron spin that is manipulated in the present embodiments while the electron is traveling through the middle, nonmagnetic layer. One of the ferromagnetic electrodes may be the tip of a scanning tunneling microscope (STM).

Abstract: A method of generating a thin film for use in a spin valve of a magnetoresistive (MR) sensor having a nano-constricted spacer is provided. The bottom portion of the spin valve is deposited up to the pinned layer, a deposition chamber is provided, and the spacer layer is sputtered thereon. A main ion beam generates ions onto a composite surface including magnetic chips and insulator material. Simultaneously, an assisted ion beam provides ions directly to the substrate, thus improving the softness of the free layer and smoothness of the spacer layer. Neutralizers are also provided to prevent ion repulsion and improve ion beam focus. As a result, a thin film spacer can be formed, and the nano-constricted MR spin valve having low free layer coercivity and low interlayer coupling between the free layer and pinned layer is formed.

Abstract: A spin-valve structure is provided, illustrating the layer structure used for the magnetic tunnel junction, by a method comprising the steps of providing a substrate, growing a ferromagnetic layer on the substrate, growing a tunnel barrier layer on the ferromagnetic layer, providing a first non-magnetic metallic contact on the ferromagnetic layer and providing a second non-magnetic metallic contact for the single ferromagnetic layer. Beside such a single sided structure a double-sided structure can be provided having e.g. a Ga0.94Mn0.06As/undoped GaAs/Ga0.94Mn0.06As trilayer structure on top of a semi-insulating GaAs substrate and an undoped LT-GaAs buffer layer. There is an inner square contact and a surrounding electrical back contact. This sample structure makes it possible to perform two-probe magnetoresistance measurements through both ferromagnets and the GaAs tunnel barrier. The resistance of the device is fully dominated by the vertical tunneling process through the tunnel barrier.

Abstract: The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the free layer functions such that the direction of magnetization changes depending on an external magnetic field, and the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of zinc oxide, tin oxide, indium oxide, and indium tin oxide (ITO), the first nonmagnetic metal layer is made of Cu, and the second nonmagnetic metal layer is substantially made of Zn.

Abstract: A magnetic writer writes to a magnetic medium including a plurality of tracks that each includes a plurality of isolated magnetic elements for storage of information. The magnetic writer includes a write element having a write element tip having a leading edge, a trailing edge, and first and second side edges extending between the leading edge and the trailing edge. A side shield is proximate the first side edge and no shield is proximate the second side edge.

Abstract: A magnetic device includes a write element having a write element tip and a first return element magnetically coupled to the write element on a trailing side of the write element. A conductor is positioned proximate to an edge of the write element tip and is configured to generate an assist field that augments a write field generated by the write element. A shield that includes at least one gap extends from the first return element toward the write element tip.

Abstract: A magnetic sensor for detecting magnetism in two-axial directions or three-axial directions is constituted of a substrate, a silicon oxide film that is formed on the substrate so as to form the planar surface and slopes, a plurality of magnetoresistive elements, each of which is formed by laminating a free layer, a conductive layer, and a pin layer on the substrate, a plurality of lead films that are formed to connect the magnetoresistive elements in series, a CVD oxide film for covering the magnetoresistive elements, and a non-magnetic film that is formed between the magnetoresistive elements and the CVD oxide film so as to cover the periphery of the free layer with respect to each magnetoresistive element. Thus, it is possible for the magnetic sensor to include the magnetoresistive elements having superior hysteresis characteristics.

Abstract: A magnetic recording head includes a recording magnetic pole, and a spin oscillation device including a first magnetic layer having at least one magnetic material layer, a second magnetic layer having at least one magnetic material layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first magnetic layer and the second magnetic layer are antiferromagnetically coupled and/or magnetostatically coupled to each other. The first magnetic layer and the second magnetic layer are laminated in a direction generally parallel to a medium facing surface and generally parallel to a side surface of the recording magnetic pole intersecting with the medium facing surface.

Abstract: A perpendicular magnetic recording (PMR) head is fabricated with a pole tip shielded laterally by a separated pair of bottom side shields and shielded from above by an upper shield. The bottom side shields surround a lower portion of the pole tip while the upper portion of the pole tip is surrounded by non-magnetic layers. The bottom shields and the non-magnetic layer form wedge-shaped trench in which the pole tip is formed by a self-aligned plating process. The wedge shape is formed by a RIE process using specific gases applied through a masking layer formed of material that has a slower etch rate than the non-magnetic material or the shield material. A masking layer of Ta, Ru/Ta, TaN or Ti, formed on a non-magnetic layer of alumina that is formed on a shield layer of NiFe and using RIE gases of CH3OH, CO or NH3 or their combinations, produces the desired result. A write gap layer and an upper shield is then formed above the side shields and pole.