Abstract: A duty cycle correction circuit for correcting the duty cycle of a clock signal generated by a clock generator includes a complementary buffer chain, level shifter circuits and a self-bias circuit. A clock signal with a distorted duty cycle and its complement are provided to the level shifter circuits. The level shifter circuits reduce the magnitude of voltage of the clock signal and the complement and generate level shifted signals. The level shifted signals are provided to a differential amplifier that generates a control signal indicating the magnitude of distortion in the duty cycle. The control signal is used to correct the duty cycle of the clock signal. The self-bias circuit is used to bias the differential amplifier.

Abstract: A semiconductor die has rows of bond pads along the edges of a major surface. The corners of the die are designated as keep out areas, with design layout rules prohibiting a probe-able bond pad from being placed in the keep out areas so that a minimum distance may be maintained between distal ends of adjacent rows of bond pads (i.e., bond pads along adjacent edges). The bond pads of each row have IO pad areas that are aligned with each other and IO probe areas that are aligned with each other. A generally L-shaped bond pad includes a first, vertical part that extends inwardly from an edge of the semiconductor die and a second, horizontal part connected to the vertical part. The L-shaped bond pad may be placed between a last bond pad in a row and a corner keep out area, and the second part of the L-shaped bond pad extends into the corner keep out area.

Abstract: A prepended parity data encoder is loaded with sets of data and constant data, which are used for parity calculation. A shift circuit shifts each of the plural sets of data and the constant data, one bit at a time in parallel. When the constant data is output from the shift circuit, a parity generator dynamically generates prepended parity data based on the constant data and the plural sets of data.

Abstract: In a Redundant Array of Independent Discs (RAID) type memory, dual parities P and Q are generated by a dual XOR engine that performs a plain XOR operation for parity P and a weighted XOR operation for parity Q. The plain and weighted XOR operations may be performed in a single pass.

Abstract: A method for encoding an image includes identifying first and second sets of pixels from multiple pixels in a current row of the image, where the first set of pixels includes one or more pixels that are equal to one or more corresponding pixels in a reference row, and the second set of pixels are not equal to one or more corresponding pixels in the reference row. A third set of pixels that includes at least one of a first group of pixels selected from the first set of pixels and a second group of pixels selected from at least one of the first set and the second set of pixels is identified and encoded in an encoded data set.

Abstract: An improved semiconductor package includes thermal tape placed over a top side of a die that is attached to a substrate with an underfill material. The tape extends to the substrate. The tape deforms with heat and entraps the die and underfill material. Air bubbles are trapped between the tape and the die and underfill material. The tape can be weighted and lined with an adhesive material. The tape aids in preventing the die from cracking due to mishandling.

Abstract: A method for generating a standard cell layout pattern for standard cell placement in an integrated circuit uses a congestion map. First, congestion zones are identified in a congestion map generated by an Electronic Design Automation (EDA) application. Next, routing tracks data corresponding to bounding boxes belonging to the congestion zones are used to calculate values of average vertical and horizontal congestion. Subsequently, a value of modified standard cell density is calculated based on the values of average vertical and horizontal congestion, and an unmodified standard cell density. The dimensions of a layout pattern unit are calculated using the value of the modified standard cell density and the width of standard cells. Various layout pattern units then are placed adjacent to one another to form a standard cell layout pattern.

Abstract: A method and system for power supply management in an integrated chip selectively manages the power supplied to the various circuits within the integrated circuit. The integrated circuit includes a combinational logic block, a memory block, a power supply block, and a control block. The power supply block includes multiple power regulators for generating power supply potentials of various magnitudes. The control block receives a power down signal, a clock disable signal, and a temperature threshold signal, and generates control signals for controlling the magnitude of the potential of the power supplied to the combinational logic block and the memory block by the power supply block.

Abstract: A memory device for efficient word line, bit line and precharge tracking is provided. The memory device includes a memory array, one or more address decoders, a word line driver, a plurality of sense amplifiers, a reference word line column, a reference bit line column, and a control circuit. The control circuit generates a control signal to perform read and write operations on the memory device. The address decoder selects a bit line and a word line. The selected word line is activated by the word line driver. While the reference word line column is used for vertical tracking of the word line, the reference bit line column is used for vertical tracking of the bit line. The sense amplifiers are activated to read the bit line.

Abstract: A digital logic circuit includes a logic element for providing a data signal, a clock for providing a clock signal and a master-slave flip-flop. The master-slave flip-flop includes a master latch for storing data on a master latch input at a first active edge of the clock signal and a slave latch for storing data on an output of the master latch at a second active edge of the clock signal following the first active edge. A timing error detector asserts an error signal in response to a change in the data signal during a detection period following the first active edge of the clock signal. A timing correction module selectively increases a propagation delay of the data signal from the logic element to the master latch input in response to the error signal.

Abstract: A test controller switches the operation of output stages in an integrated circuit between a normal operation mode and a test mode. The output stages are respectively connected to switch elements. A level shifter generates a switch signal for controlling activation and deactivation of the switch elements in accordance with the normal operation mode and the test mode.

Abstract: A method for assembling a semiconductor package includes a rapid cooling step after post mold curing of an encapsulation material. The rapid cooling step includes blowing chilled, compressed air over the package for about two minutes. The rapid cooling step does not require any clamping pressure be simultaneously applied to the package. The rapid cooling step reduces a temperature of the encapsulation material from a curing temperature to the cooled temperature within a maximum period of less than five minutes. By using rapid cooling, as opposed to cooling the package under a clamping pressure with ambient air, package warpage due to CTE mismatches is prevented.

Abstract: A method of forming a wire bond in a semiconductor device includes forming a first bump of a first composition proximate to a probe mark on a bond pad. A second bump of the first composition is formed adjacent to the first bump such that the first and second bumps are formed away from the probe mark. A wire of a second composition that is harder than the first composition is attached on top of the first and second bumps to form an interconnection.

Abstract: A mold (10) including a first mold part (12) and a second mold part (14) define a mold cavity (16) therebetween. A gate (18) is formed in at least one of the first and second mold parts (12) and (14) such that the gate (18) communicates with the mold cavity (16). A vent (20) having a constricted portion (22) is arranged to communicate with the mold cavity (16). A substrate (28) including a base substrate (30) and an electrically conductive pattern (32) and (34) formed on the base substrate (30) may be received in the mold (10). A solder resist layer (36) is formed on the base substrate (30) and a portion of the electrically conductive pattern (32). A plurality of grooves (38) and (40) is formed in a staggered arrangement around a periphery of a molding area (42) on the substrate (28).

Abstract: A digital signal voltage level shifter includes an edge detector that detects assertion of a digital input signal from a first logic circuit in a source voltage domain, and an output module triggered by the edge detector for asserting a digital output signal corresponding to the digital input signal for a second logic circuit in a destination voltage domain. The edge detector and the output module are supplied with power only from a power supply of the destination voltage domain and are not connected to a power supply of the source voltage domain.

Abstract: A regulator circuit includes an output transistor that generates an output current in accordance with a control voltage that is applied to a control terminal of the output transistor. A differential amplifier provides feedback control of the control voltage in accordance with a level of the output current. A phase compensation circuit is connected to the differential amplifier and the control terminal of the output transistor. The phase compensation circuit adjusts an output impedance of the differential amplifier. The phase compensation circuit includes a variable resistor that decreases the output impedance of the differential amplifier when the output current increases.

Abstract: A method for passive cancellation of substrate noise for a buck converter uses an on-chip capacitor to reduce the substrate noise. The capacitor achieves a close-magnitude noise with opposite phase for better noise cancellation effect in the substrate. The capacitor can be realized as a MOS capacitor, NMOS isolation ring n-well capacitor, n-well junction capacitor, isolated p-well junction capacitor, etc. The capacitor is easy to implement. Further, bond wire parasitic inductance in the buck converter is used to reduce substrate noise.

Abstract: A CMOS temperature detection circuit includes a start-up circuit for generating a start-up voltage (VN), and a proportional to absolute temperature (PTAT) current generator coupled to the start-up circuit for generating a PTAT current. The start-up voltage turns on the PTAT current generator, and the PTAT current generator uses the sub-threshold characteristics of CMOS to generate the PTAT current. A PTAT voltage generator coupled to the PTAT current generator receives the PTAT current and generates a PTAT voltage and an inverse PTAT voltage (VBE). A comparator circuit coupled to the voltage generator compares the inverse PTAT voltage to first and second alarm limits, which are defined using the generated PTAT voltage, and generates an alarm signal based on the comparison results.

Abstract: An input bit stream including a clock signal and data bits is oversampled to obtain one or more sets of data samples. One or more sets of non-transitioning phases corresponding to data samples that do not switch between zero and one are then identified. Center phases corresponding to the one or more sets of non-transitioning phases are identified and then a final center phase that accurately represents the bits belonging to the input bit stream is selected. The data samples corresponding to the final center phase are extracted, thereby recovering the clock signal and data bits from the input bit stream.

Abstract: A USB system includes a USB hub, a USB device, and a USB bus interconnecting the USB hub and the USB device. The USB hub asserts a reset signaling on the USB bus to initiate a high-speed detection handshake. The USB hub and the USB device activate corresponding dual-mode squelch detectors in a first (handshake) mode of operation. The USB device transmits a device chirp signal to the USB hub. The USB hub responds with a sequence of hub chirp signals. The USB device detects the hub chirp signals and then the USB hub and the USB device establish a communication link in a high-speed mode of communication in accordance with USB 2.0. The dual-mode squelch detectors in the USB hub and the USB device can also be activated in a second (normal) mode of operation.