Abstract: A method for making a semiconductor package firstly provides a lead frame having a first surface and a corresponding second surface. The lead frame includes at least a package unit that further includes a die pad, and a plurality of leads disposed on the periphery of the die pad where each of the leads further includes a neck portion. The method then attaches the second surface of the lead frame to a tape, and performs a punching process to cut off the neck portion of the lead so as to form a plurality of conductive blocks disposed independently on the periphery of the die pad. The method further provides a chip having its back surface attach to the first surface of the die pad, and provides electrical connection between the bonding pad and the first surface of the conductive block by using a plurality of bonding wires. Further, the method performs an encapsulating process to encapsulate the chip, the bonding wires, the die pad, and the first surface of the conductive block.

Abstract: A data handling method is provided for handling digitized data through compression/decompression and utilization. By this method, the original digitized data are concurrently compressed into a first set of compressed data through a low-compression-rate compression process and a second set of compressed data through a high-compression-rate compression process. Then, the first and second sets of compressed data are transferred together to an information processing unit, such as a personal computer. At the personal computer, the first set of compressed data are decompressed to obtain a set of decompressed data representing the original digitized data for output of the original digitized data at an output device, while the second set of compressed data remain in compressed form for storage and further transfer. Since the information processing unit needs to perform just a simple decompression process to decompress the low-compression-rate set of compressed data, the overall system efficiency can be increased.

Abstract: There is provided an apparatus for supplying an ice water-containing bag for use in icing. The apparatus includes an ice machine, an ice storing section for storing ice manufactured by the ice machine, ice packing means for packing the ice stored in the ice storing section in a bag having a water resistance, water supplying means for supplying water into the bag, sealing means for sealing an opening of the bag in which ice and water has been put, a belt conveyer for carrying the bag containing ice and water, a controller for controlling the respective means to be activated/suspended, and ice-water manufacturing instructing means connected with the control means, for sending an instruction for manufacturing the ice water-containing bag.

Abstract: A composite polishing pad. A lower polishing pad is concentrically disposed on a turning table. The lower polishing pad has a same radius of the turning pad. A handler is installed at a periphery of the lower polishing pad to advantage a renewal process. An upper polishing pad is disposed on the lower polishing pad, again, concentrically to the turning table. The upper polishing pad has a radius between a covering range of polishing dresser (conditioner) and a covering range of a top ring. Therefore, while initiating, the projecting portions are not formed on the composite polishing pad, so that the manually notching step is skipped.

Abstract: The invention provides a pickup head used in an optical data storage system. The pickup head contains a diffractive optical element (DOE) stack on a semiconductor substrate. The DOE stack includes multiple diffractive lenses for providing several diffractive surfaces and a middle layer serving as a beamsplitter and servo-generating element for a light reflected from an optical storage medium. The middle layer is sandwiched by the diffractive lenses that are located on both outer parts of the DOE stack. The semiconductor substrate includes at least a laser source and several photodetectors. The middle layer's function preferably includes a polarization-selective DOE and a quarter-wave retarder oriented to rotate a polarization state of the laser source, so that only the light reflected from the optical storage medium is diffracted by the polarization-selective DOE.

Abstract: A method and apparatus for reconditioning and charging a battery is disclosed. The lead-acid battery rejuvenator apparatus comprises of an oscillator, a frequency divider and a pair of transistors. The oscillator outputs a frequency signal. The frequency divider receives the frequency signal and splits the frequency signal into a plurality of non-overlapping operating frequency signals. These operating frequency signals are sent to respective operating frequency output terminals. The three terminals of a first transistor arc electrically connected to one terminal of an inductor, the negative terminal of the lead-acid battery and one of the operating frequency output terminals. The other terminal of the inductor is electrically connected to the negative terminal of the lead-acid battery. The three terminals of a second transistor are electrically connected to one terminal of a resistor, the negative terminal of the lead-acid battery and another operating frequency output terminal.

Abstract: A method for fabricating an embedded dynamic random access memory (DRAM) is provided. The method contains implanting ions onto the substrate at a DRAM active area and a logic circuit with different dopant concentration. A thermal oxidation process is performed to form a DRAM gate oxide layer with a greater thickness than that of a logic gate oxide layer. A DRAM MOS transistor is formed at a DRAM region and a logic MOS transistor is formed at a logic region. The DRAM MOS transistor has a polycide gate structure. The logic transistor has a first self-aligned silicide (Salicide) layer on its gate structure, and a second Salicide on its interchangeable source/drain region. A dielectric layer is formed over the substrate. A contact opening is formed in the dielectric layer by patterning the dielectric layer to expose the interchangeable source/drain region of the DRAM transistor. A stack capacitor is formed on the dielectric layer.

Abstract: A method for processing marine products includes a plurality of steps. First put natural charcoal in a vacuum oven and draw air out of the vacuum oven. Second, heat up the interior of the vacuum oven to let charcoal produce carbon monoxide and water vapor, and third, cool carbon monoxide in a cooling tank to room temperature. Fourth. separate carbon monoxide from water vapor and draw carbon monoxide into an air bag. Fifth, draw the carbon monoxide in a marine food processing device to let carbon monoxide function to settle iron contained in marine food to remain in the meat of marine food to keep fresh red color and freshness of marine food.

Abstract: An outer air spacer structure, applicable to multilevel interconnects technologies, and the method of making the same are disclosed. The outer air spacer is adjacent to a metal line to provide a lower dielectric constant in a metal interconnect structure. The outer air spacer is formed by initially forming a first spacer adjacent to the metal line, followed by forming a second spacer on the first spacer. The first spacer is then removed to form an air gap between the second spacer and the metal line. The air gap is closed to form the outer air spacer by partially sealing the air gap with a portion of passivation layer that is deposited subsequently.

Abstract: A method for fabricating a crown capacitor is able to form a deep UV photoresist layer having a cylindrical structure by using only one mask. A conductive layer, the main structure of a bottom electrode, is formed on the sidewall of the deep UV photoresist layer by performing a silylation process. A fairly small and high cylindrical structure is formed by the invention, so that the crown capacitor can be used in DRAM having a storage capacity higher than 64 MB. Also, there is no problem of registration because only one mask is used.

Abstract: A method for manufacturing a photodiode CMOS image sensor. A first well and a second well are formed in a first type substrate. An isolation layer is formed over the first well and the second well. At the same time, an isolation layer is formed over another region to pattern out an active region for forming the photodiode. A protective ring layer is formed over the peripheral area of the photodiode active region. A first gate structure and a second gate structure are formed above the first well and the second well respectively. A first type source/drain region and a second type source/drain region are formed in the first well and the second well respectively. Concurrently, a second type heavily doped layer is formed in the first type substrate inside the area enclosed by the protective ring layer. A high-energy ion implantation is carried out to form a second type lightly doped layer in the first type substrate just outside the second type heavily doped layer.

Abstract: A method and apparatus is provided for automatically detecting whether a video output port on a computer video display adapter is currently externally connected or disconnected. In practice the method and apparatus can be utilized, for example, on a video display adapter having an S output port and an AV output port to detect which one of them is currently externally connected for video transmission. The method and apparatus is characterized in the provision of a microswitch on one of the video output ports, for example the S output port. The microswitch is set to a first state when the S output port is externally disconnected (i.e., no insertion connector is inserted therein), and will be actuated to a second state when the S output port is externally connected (i.e., the insertion connector of a cable is inserted therein). Accordingly, when the microswitch is in a connected state, it indicates that the other port, i.e.

Abstract: A method of manufacturing a ROM cell. A DRAM cell is provided. An ONO (oxide-nitride-oxide) stacked layer is used as a dielectric film of a capacitor of the DRAM cell. When a supply power is over 6 volts, the dielectric layer would be breakdown so that leakage is occurred between a lower electrode and an upper electrode of the capacitor. The DRAM cell, which can be used as a ROM cell, is thus readout as a stock at fault to stock a logic state of “1” or “0”. The stored data as “1” or “0” is depended on voltage of the upper electrode (VPL) and a voltage of the bit line (VBL). If VPL>VBL, the breakdown of the dielectric film would make the cell stock at “1”, and a normal DRAM cell is stocked at “0”, and vice versa.

Abstract: An apparatus for packaging a semiconductor device and a method for packaging the same. The apparatus includes a closed printing chamber having a baseplate on the bottom of the closed printing chamber. A pressure controlling system is connected to the closed printing chamber. The baseplate includes a heating unit. A paste source tank is located in the closed printing chamber.

Abstract: A polarization-type laser detection system is provided, which is capable of distinguishing between a reflected light signal from a target object and a back-scattered light signal from a mass of suspended particles in the air. This allows the laser detection system to be reliably operable under bad weather conditions when the air is filled with suspended particles. The laser detection system includes a laser means for producing a linearly-polarized laser beam which is the directed to a specified direction for target detection. When echoed back, the echoed signal is first polarized by an analyzer lens into a direction that is perpendicular to the direction in which the emitted laser beam is polarized. Further, a Fresnel lens is used for focusing the emerging light from the analyzer lens into a focal point where an optical detection module is mounted.

Abstract: The structure of high-Q inductor applied in a monolithic circuit according to the invention comprises a plurality of spiral metal lines and a plurality of dielectric layers, each dielectric layer formed between two adjacent spiral metal lines. Furthermore, via plugs are formed in each dielectric layer to electrically connect two adjacent spiral metal lines. A spiral air trench is formed along the spacing of the spiral metal lines in the dielectric layers. Therefore, 3D-structure of the inductor of the invention can greatly reduce the series resistance thereof without widening the spiral metal lines. In addition, the spiral air trench, filled with air which has a lower dielectric constant, can efficiently reduce the parasitic capacitance between the spacing of the spiral metal lines. As a result, the inductor of the invention has a higher quality factor at a proper RF operating frequency region.

Abstract: A method is used to fabricate a wide-angle Y-branch polarization splitters on lithium niobate crystal substrate. The Y-branch polarization splitter combines a straight waveguide with a substrate prism type wide-angle waveguide branch. The straight waveguide is a random polarization nickel diffusion waveguide. The branching waveguide is a proton exchanged waveguide. The fabrication technology needs only once of nickel diffusion and once of proton exchange. Due to the inherent property of single polarization for the proton exchanged waveguide, only the extraordinary polarization wave is bent and the ordinary wave remains in the straight waveguide. This results in a polarization splitter with high extinction ratio.

Abstract: A magnetoelectric apparatus for measuring the droplet frequency response at a printhead by applying a method comprising a metallic detecting plate and a magnetic ring, and a method using the foregoing apparatus to determine the maximum droplet frequency response of the printhead. When an ink drop jetted from the nozzle makes contact with the detecting plate, which is perpendicular to the nozzle plate of the printhead, a current flows through the detecting plate immediately, and is detected as a portion of an expected signal. As soon as the ink drop leaves the nozzle completely, the foregoing current no longer exists. However, the magnetic ring generates an induced current that flows in the same direction as that of the foregoing current to complement the absence thereof, wherein the induced current is also detected as another portion of the expected signal. The expected signal is then processed by a signal-processing routine for determining the maximum droplet frequency response of the inkjet printhead.

Abstract: A method of fabricating integrated circuits. An oxide layer and a patterned dummy gate layer are formed on a substrate. The patterned dummy gate layer is used as an implantation mask in a first ion implantation step to form a source/drain in the substrate. After performing a step to reduce the width of the patterned dummy gate layer, the narrower patterned dummy gate layer is used as an implantation mask in a second ion implantation step to form a source/drain extension in the substrate. A planarized dielectric layer is formed over the substrate; after which the dummy gate layer and the underlying oxide layer are removed to form an opening inside the dielectric layer. A gate dielectric layer and a metal gate are formed inside the opening.

Abstract: A manufacturing method and a structure of a multi-layered dielectric layer for forming openings in the direction layers for improving integration of integrated circuits, capability of step coverage, and problems caused by a structure of overhang, in which oblique sidewalls of the openings in multi-layered dielectric layer can improve the step coverage in the following manufacturing process.