Abstract: A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by InXSbYTeZ or, alternatively, with substitutions of silicon and/or tin for indium, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer.

Abstract: In a semiconductor device package having a stress relief spacer, and a manufacturing method thereof, metal interconnect fingers extend from the body of a chip provide for chip interconnection. The metal fingers are isolated from the body of the chip by a stress-relief spacer. In one example, such isolation takes the form of an air gap. In another example, such isolation takes the form of an elastomer material. In either case, mismatch in coefficient of thermal expansion between the metal interconnect fingers and the body of the chip is avoided, alleviating the problems associated with cracking and delamination, and leading to improved device yield and device reliability.

Abstract: A wiring structure includes a conductive pattern on a substrate, a first insulation layer pattern between adjacent conductive patterns and a second insulation layer pattern on the first insulation layer pattern. The first insulation layer pattern is separated from the conductive pattern by a first distance to provide a first air gap. The second insulation layer pattern is spaced apart from the conductive pattern by a second distance substantially smaller than the first distance to provide a second air gap. The wiring structure may have a reduced parasitic capacitance while simplifying processes for forming the wiring structure.

Abstract: In multiple-layered memory devices, memory systems employing the same, and methods of forming such devices, a second memory device layer on a first memory device layer comprises a second substrate including a second memory cell region. The second substrate includes only a single well in the second memory cell region, the single well of the second memory cell region comprising a semiconducting material doped with impurity of one of a first type and second type. The single well defines an active region in the second memory cell region of the second substrate. Multiple second cell strings are arranged on the second substrate in the second active region.

Abstract: A semiconductor chip package and a semiconductor chip fabricating method are provided. A semiconductor chip package comprises at least two semiconductor chips having a stacked configuration, the semiconductor chips at least one of: sharing DC signals of DC generating circuits provided by one of the semiconductor chips; and sharing a DLL clock signal of a DLL circuit provided by the semiconductor chip having the DC generating circuits or provided by another semiconductor chip. Power consumption can be reduced, and sharing a DLL clock is valid. In addition, a stabilized DC supply can be guaranteed and an increase for level trimming range and productivity can be improved.

Abstract: A multibit electro-mechanical memory device comprises a substrate, a bit line on the substrate, a first interlayer insulating film on the bit line, first and second lower word lines on the first interlayer insulating film, the first and second lower word lines separated horizontally from each other by a trench, a spacer abutting a sidewall of each of the first and second lower word lines, a pad electrode inside a contact hole, first and second cantilever electrodes suspended over first and second lower voids that correspond to upper parts of the first and second lower word lines provided in both sides on the pad electrode, the first and second cantilever electrodes being separated from each other by the trench, and being curved in a third direction that is perpendicular to the first and second direction; a second interlayer insulating film on the pad electrode, first and second trap sites supported by the second interlayer insulating film to have first and second upper voids on the first and second cantilever

Abstract: A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by SnXSbYTeZ or, alternatively with substitutions, in whole or in part, of silicon and/or indium for tin, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. Here, 0.001?X?0.3, 0.001?Y?0.8, 0.1?Z?0.8, and X+Y+Z=1.

Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

Abstract: A material dispensing pump includes a drip prevention system and method so as to avoid undesired dripping of the dispensed fluid. In one example, the fluid path is sealed. Positive pressure is applied to the fluid during a dispensing operation to present the fluid to the auger-style pump at a desired rate. Between dispensing operations, or when dispensing is completed, the fluid is placed in suspension, for example by applying a negative pressure, thereby preventing the fluid from being inadvertently released at the dispense tip. In addition, following a dispensing operation, the pump dispensing controller can be programmed to reverse the rotation of the feed screw, in order to draw the material in a reverse direction and to further suspend the fluid.

Abstract: A phase change memory device includes a switching device, a phase change storage node connected to the switching device, and a gate electrode which is spaced apart from the phase change storage node and increases an electrical resistance of the storage node during a reset programming operation. The gate electrode may be disposed around the phase change storage node, and may be used for applying an electric field to the phase change storage node.

Abstract: A method and apparatus for generating gradation voltages are provided. Maximum and minimum reference voltages are selected from a distribution of voltages ranging from a first source voltage to a second source voltage. The maximum reference voltage is selected as a 1st gradation voltage and the minimum reference voltage is selected as an Nth gradation voltage, or vice versa, in response to an inversion control signal, where N is a natural number. First to Mth gamma voltages are selected from among a plurality of voltages generated by a voltage distribution between the 1st gradation voltage and the Nth gradation voltage. Second to (N?1)th gradation voltages are generated from a voltage distribution between the 1st gradation voltage and the Nth gradation voltage, using the 1st gamma voltage to the Mth gamma voltage, where M is a natural number.

Abstract: The present invention provides a multi-level memory device and method of operating the same. The device comprises a memory structure in which a distribution density of resistance levels around its minimum value is higher than that around its maximum value.

Abstract: In a method of forming a hole, an insulation layer is formed on a substrate, and a preliminary hole exposing the substrate is formed through the insulation layer. A photosensitive layer pattern including an organic polymer is then formed on the substrate to fill the preliminary hole. An etching gas including hydrogen fluoride (HF) or fluorine (F2) is then provided onto the photosensitive layer pattern to etch the insulation layer so that width of the preliminary hole is increased.

Abstract: In a sensor-fuzed munition system and method, the munition is provided with an additional laser designator/repeater mode of operation. In the laser designator/repeater mode, the munition has the option of initiating a target strike additionally based on whether a laser appointer energy is detected as being present on the target. The laser appointer energy signal is generated at a wavelength that is consistent with the wavelength of the laser rangefinder of the munition, and is generated based on the detected presence of a designator signal at a designator spot on the target. The laser appointer signal is directed to the designator spot and detected by the munition laser rangefinder receiver. In one embodiment, the repeater system for detecting the designator signal and for generating the appointer signal is provided on the delivery vehicle for the submunition.

Abstract: A semiconductor device and a layout method of a decoupling capacitor thereof are disclosed. The semiconductor device includes a main power/ground voltage voltage supplying line arranged in a first direction; a plurality of decoupling capacitor cells to reduce power noise generated by the power voltage and the ground voltage in the first direction and in a second direction; a plurality of sub power voltage supplying lines arranged in the second direction in a border of the plurality of decoupling capacitor cells; and a plurality of sub ground voltage supplying lines arranged in a net form in the border of the plurality of decoupling capacitor cells, wherein the plurality of decoupling capacitor cells have a first active region arranged to receive the ground voltage and the second active region disposed to receive the power voltage and to avoid a region where an inversion is formed in the decoupling capacitor.

Abstract: Provided is a nonvolatile memory device having a three dimensional structure. The nonvolatile memory device may include cell arrays having a plurality of conductive patterns having a line shape three dimensionally arranged on a semiconductor substrate, the cell arrays being separated from one another; semiconductor patterns extending from the semiconductor substrate to cross sidewalls of the conductive patterns; common source regions provided in the semiconductor substrate under a lower portion of the semiconductor patterns in a direction in which the conductive patterns extend; a first impurity region provided in the semiconductor substrate so that the first impurity region extends in a direction crossing the conductive patterns to electrically connect the common source regions; and a first contact hole exposing a portion of the first impurity region between the separated cell arrays.

Abstract: In a device and a method for detecting a letter box for an MPEG decoder, the method includes performing processing area filtering for selecting a processing area of an image used to detect the letter box; performing intra-macroblock filtering for determining the letter box area based on a change level of pixels in macroblocks in one line of the image from the processing area; performing impulse data filtering for excluding the line being detected a high frequency component from the determined letter box area; performing inter-macroblock filtering for determining the letter box area based on a change level of lines between macroblocks of the image; performing inter-line filtering for determining a boundary of the letter box based on an average of the pixel values of the lines; and performing inter-picture filtering for outputting a boundary value of the letter box that has the highest frequency number as the boundary of the letter box in successive images.

Abstract: A wafer polishing carrier apparatus and a chemical mechanical polishing equipment employing the same includes a drive rotary union rotating on an axis and receiving a flow of fluid through a first conduit in a sealed-up state; driven rotary unions revolving on their own axis at different sides of the drive rotary union, and receiving the flow of fluid from the drive rotary union through a second conduit in a sealed-up state; a carrier attached to an end part of the driven rotary union to adsorb/detach a wafer using a fluid pressure provided through a third conduit connected through the second conduit; and a filter filtering pollution material in the fluid flowing in and out of the third conduit on the periphery of the carrier to prevent the pollution material from escaping external to the carrier, the pollution material generated from rotation of the drive rotary union and driven rotary unions.

Abstract: The present invention provides a communication device for use in coaching and sports events. The invention includes, in one embodiment, a waterproof radio receiver embodied in a helmet.