Abstract: The present disclosure relates to a novel semiconductor edge and bevel inspection tool system of a wafer comprising a first illumination setup, an imaging sensor unit, and a second illumination setup. At least a portion of the second illumination radiation is configured for interacting with at least a portion of the wafer edge and bevel region surface. The second illumination setup has different radiation parameters than the first illumination setup. The first and the second illumination radiations have substantially opposite directions.

Abstract: A semiconductor inspection tool system is disclosed. The system comprises a first illumination setup for generating at least one first illumination radiation and for directing the at least one first illumination radiation to at least one bonding region non-filled volume formed between two layers of a multi-layer stack. The system also comprises a second illumination setup being for generating at least one second illumination radiation and for directing the at least one second illumination radiation at multi-layer stack edges. The second illumination radiation is configured for illuminating at least a normal edge of at least two layers, the second illumination setup has different radiation parameters than the first illumination setup. The system further includes a bonding region sensor unit for collecting reflected electromagnetic radiation from a bonding region volume and generating at least one sensing data being indicative of the bonding region.

Abstract: A method that may include performing first measurements of the height differences between the bumps and the corresponding areas, by illuminating the bumps and the corresponding areas with first radiation; wherein the first measurements are subjected to first measurement errors resulting from a virtual penetration of the first illumination into the layer; wherein each bump has a corresponding area that is proximate to the bump; preforming second measurements of thickness of the layer at the corresponding areas; wherein at least some of the first measurements are executed in parallel to an executing of at least some of the second measurements; determining first measurement errors, based on the second measurements; and determining the height differences between the bumps and the corresponding areas based on the first measurements and the first measurements errors.

Abstract: An illumination module may include a laser diode array configured to emit laser radiation; a phosphor illumination unit that is configured to emit phosphor radiation following an exposure to the laser radiation; a multiple-angle illumination unit; and intermediate optics that is configured to convey the phosphor radiation to the multiple-angle illumination unit. The multiple-angle illumination unit is configured to receive the phosphor radiation and to dark field illuminate a region of a sample wafer from multiple angles during inspection of the wafer.

Abstract: A method for measuring height differences between tops of multiple bumps of an upper surface of a layer, the method may include performing first measurements of the height differences between the bumps and the corresponding areas, by illuminating the bumps and the corresponding areas with first radiation; wherein the first measurements are subjected to first measurement errors; and determining the height differences between the bumps and the corresponding areas based on the first measurements and the first measurements errors.

Abstract: There may be provided a method for inspecting a top redistribution layer conductors of an object. The top redistribution layer (RDL) is positioned above at least one lower RDL and above at least one other dielectric layer. The method may include (i) illuminating the object with radiation, the at least one lower dielectric layer significantly absorbs the radiation; (ii) generating, by a detector, detection signals that represent radiation reflected from the object, and (iii) processing, by a processor, the detection signal to provide information about the top RDL. The processing may include distinguishing detection signals related to the top RDL from detection signals related to the at least one lower RDL.

Abstract: A method for automatic defect classification, the method may include acquiring, by a first camera, at least one first image of at least one area of an object; processing the at least one first image to detect a group of suspected defects within the at least one area; performing a first classification process for initially classifying the group of suspected defects; determining whether a completion of a classification of the first subgroup of the suspected defects requires additional information from a second camera; when determining that the first subgroup of the suspected defects requires additional information from the second camera then: acquiring second images, by the second camera while applying image acquisition parameters of the second camera, to provide the additional information; and performing the second classification process for classifying the first subgroup of suspected defects.

Abstract: A method for automatic defect classification, the method may include (i) acquiring, by a first camera, at least one first image of at least one area of an object; (ii) processing the at least one first image to detect a group of suspected defects within the at least one area; (iii) performing a first classification process for initially classifying the group of suspected defects; (iii) determining whether a first subgroup of the suspected defects requires additional information from a second camera for a completion of a classification; (iv) when determining that the first subgroup of the suspected defects requires additional information from the second camera then: (a) acquiring second images, by the second camera, of the first subgroup of the suspected defects; and (b) performing a second classification process for classifying the first subgroup of suspected defects.

Abstract: An inspection system and a method for inspection an object. The method may include acquiring a defocused image of an area of an object, and processing the defocused image of the area to find a phase shift between optical paths associated with certain proximate points of the area. The phase shift may be indicative of a defect. The acquiring of the defocused image may include illuminating the area with a radiation beam that may be spatially coherent and collimated when impinging on the area. The illuminating may include passing the radiation beam through an aperture that may be defined by an aperture stop that may be positioned within an aperture stop plane. The size of the aperture may be a fraction of a size of the aperture stop.

Abstract: There may be provided a method for determining three dimensional (3D) defect information, the method may include performing a two-dimensional (2D) inspection of an area of a wafer to generate 2D defect information related to defects of the area of the wafer; estimating 3D defect information regarding the defects of the area of the wafer, wherein the estimating is based on the 2D defect information related to defects of the area of the wafer, and a mapping between 2D defect information and 3D defect information, wherein the mapping is generated using a supervised deep learning machine process.

Abstract: A method for detecting defects in a thinned die, the method may include inspecting the thinned die with a two-dimensional inspection module, to find suspected defects that appear as non-reflecting regions that fulfill a size condition; measuring, using a depth measurement module, a depth of the suspected defects; and defining a suspected defects as a defects when the depth parameter exceeds a depth threshold.

Abstract: A method for determining a property of an object positioned on a photo-sensitive polyimide layer, wherein the photo-sensitive polyimide layer is positioned on a lower layer that is a radiation reflecting layer, the method may include illuminating, by an illumination unit, an area of the photo-sensitive polyimide layer with first ultraviolet radiation; sensing, by a first sensor, a first reflected ultraviolet radiation that was reflected from the area; and determining, by a processor, based at least in part on the first reflected ultraviolet radiation, the property of the object.

Abstract: There may be provided a method for determining three dimensional (3D) defect information, the method may include performing a two-dimensional (2D) inspection of an area of a wafer to generate 2D defect information related to defects of the area of the wafer; estimating 3D defect information regarding the defects of the area of the wafer, wherein the estimating is based on the 2D defect information related to defects of the area of the wafer, and a mapping between 2D defect information and 3D defect information, wherein the mapping is generated using a supervised deep learning machine process.

Abstract: There may be provided a method for inspecting a top redistribution layer conductors of an object. The top redistribution layer (RDL) is positioned above at least one lower RDL and above at least one other dielectric layer. The method may include (i) illuminating the object with radiation, the at least one lower dielectric layer significantly absorbs the radiation; (ii) generating, by a detector, detection signals that represent radiation reflected from the object, and (iii) processing, by a processor, the detection signal to provide information about the top RDL. The processing may include distinguishing detection signals related to the top RDL from detection signals related to the at least one lower RDL.

Abstract: A method for estimating a thickness related to multiple conductive structural elements of an object, the method includes estimating a height difference between an upper surface of a conductive structural element and an upper surface of a photoresists layer portion that surrounds the conductive structural element, to provide multiple height differences; estimating thicknesses of the multiple photoresists layer portions, based at least on the second part of the emitted radiation; and calculating thickness values related to the multiple conductive structural elements, wherein the calculating is based at least on the multiple height differences and on the estimated thickness of the multiple photoresists layer portions.

Abstract: An inspection system for inspecting a semiconductor substrate, the inspection system may include an inspection unit that comprises a partially blocking bright field unit and a non-blocking bright field unit; wherein the partially blocking bright field unit is configured to block any specular reflection that fulfills the following: (a) the specular reflection is caused by illuminating, along a first axis, of an area of the wafer, (b) the specular reflection propagates along a second axis, (c) the first axis and the second axis are symmetrical about a normal to the area of the wafer, and (d) the normal is parallel to an optical axis of the partially blocking bright field unit; and wherein the non-blocking bright field unit is configured to pass to the image plane any specular reflection that fulfills the following: (a) the specular reflection is caused by illuminating, along the first axis, of an area of the wafer, (b) the specular reflection propagates along the second axis, (c) the first axis and the second a

Abstract: An inspection system that may include a motion device, for supporting an inspected object and for moving the inspected object, in response to motion device triggering signals, by a movement that is characterized by speed variations; a signal generator, for generating camera triggering signals and motion device location triggering signals; a motion device location generator, for providing location information indicative of locations of the stage at points of time that are determined by the motion device location triggering signals; a continuous illuminator for continuously illuminating areas of the inspected object; and a camera for acquiring images of areas of the inspected object in response to the camera triggering signals.

Abstract: An aperture stop that includes a non-circular region that comprises at least one opaque region and at least one opening region; wherein each point in the at least one opening region is (a) mapped to an angle of illumination and (b) is associated with a corresponding point in the at least one opaque region that. mapped to an angle of specular reflectance from the angle of illumination mapped to the opening point.

Abstract: An inspection system for inspection a surface of a substrate, the inspection system may include an interface for holding the substrate; a movement mechanism for moving the interface, thereby moving the substrate between different positions; a bright field light source that is configured to illuminate different bright field illuminated parts of the surface of the substrate when the substrate is positioned at the different positions; at least one dark field light source that is configured to illuminate different dark field illuminated parts of the surface of the substrate when the substrate is positioned at the different positions; and a camera that is configured to: (a) generate bright field detection signals in response to light that is detected by the camera as a result of the illumination of the different bright field illuminated parts; and (b) generate dark field detection signals in response to light that is detected by the camera as a result of the illumination of the different dark field illuminated par

Abstract: An inspection system and a method for inspecting a diced wafer. The method includes: acquiring multiple images of multiple portions of the diced wafer according to a predefined image acquisition scheme; locating multiple unique features within the multiple images; and assigning a die index to each die of the multiple dice and associating between the multiple dice and multiple reference dice in response to locations of the multiple unique features and to at least one expected die dimension.