Patents Assigned to Lam Research Corporation
  • Patent number: 11830759
    Abstract: Various carrier ring designs and configurations to control an amount of deposition at a wafer's front side and bevel edge are provided. The carrier ring designs can control the amount of deposition at various locations of the wafer while deposition is performed on the wafer's back side, with no deposition desired on the front side of the wafer. These locations include front side, edge, and back side of bevel; and front and back side of the wafer. Edge profiles of the carrier rings are designed to control flow of process gases, flow of front side purge gas, and plasma effects. In some designs, through holes are added to the carrier rings to control gas flows. The edge profiles and added features can reduce or eliminate deposition at the wafer's front side and bevel edge.
    Type: Grant
    Filed: December 16, 2021
    Date of Patent: November 28, 2023
    Assignee: Lam Research Corporation
    Inventors: Michael J. Janicki, Brian Joseph Williams
  • Patent number: 11819970
    Abstract: A tool for driving a component with a knurling pattern around an outer surface of the component is provided. A shaft, with a first end, is in the form of at least a partial cylinder, where the at least partial cylinder has a first inner diameter that is less than an outer diameter of the knurling pattern. Serrations in the shaft have a pattern that matches the knurling pattern, which allow the serration in the shaft to engage with the knurling pattern so that when the shaft is rotated, the component is rotated.
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: November 21, 2023
    Assignee: Lam Research Corporation
    Inventors: Terrence George Bernier, Timothy Scott Thomas, Allan Jones, Jeffrey Simpson
  • Patent number: 11823928
    Abstract: A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency RF signal and another circuit that provides a high frequency RF signal. The system includes an output circuit and the stations. The output circuit combines the low frequency RF signal and the high frequency RF signal to generate a plurality of combined RF signals for the stations. Amount of low frequency power delivered to one of the stations depends on wafer bow, such as non-flatness of a wafer. A bowed wafer decreases low frequency power delivered to the station in a multi-station chamber with a common RF source. A shunt inductor is coupled in parallel to each of the stations to increase an amount of current to the station with a bowed wafer. Hence, station power becomes less sensitive to wafer bow to minimize wafer bowing.
    Type: Grant
    Filed: October 29, 2021
    Date of Patent: November 21, 2023
    Assignee: Lam Research Corporation
    Inventors: Edward Augustyniak, David French, Sunil Kapoor, Yukinori Sakiyama, George Thomas
  • Patent number: 11823875
    Abstract: Systems and methods for real-time control of temperature within a plasma chamber are described. One of the methods includes sensing a voltage in real time of a rail that is coupled to a voltage source. The voltage source supplies a voltage to multiple heater elements of the plasma chamber. The voltage that is sensed is used to adjust one or more duty cycles of corresponding one or more of the heater elements. The adjusted one or more duty cycles facilitate achieving and maintaining a temperature value within the plasma chamber over time.
    Type: Grant
    Filed: July 26, 2021
    Date of Patent: November 21, 2023
    Assignee: Lam Research Corporation
    Inventor: Changyou Jing
  • Patent number: 11823909
    Abstract: Selective deposition of a sacrificial material on a semiconductor substrate, the substrate having a surface with a plurality of regions of substrate materials having different selectivities for the sacrificial material, may be conducted such that substantial deposition of the sacrificial material occurs on a first region of the substrate surface, and no substantial deposition occurs on a second region of the substrate surface. Deposition of a non-sacrificial material may then be conducted on the substrate, such that substantial deposition of the non-sacrificial material occurs on the second region and no substantial deposition of the non-sacrificial material occurs on the first region. The sacrificial material may then be removed such that net deposition of the non-sacrificial material occurs substantially only on the second region.
    Type: Grant
    Filed: January 15, 2019
    Date of Patent: November 21, 2023
    Assignee: Lam Research Corporation
    Inventors: Kashish Sharma, Taeseung Kim, Samantha Tan, Dennis M. Hausmann
  • Patent number: 11821071
    Abstract: Molybdenum-containing films are deposited on semiconductor substrates using reactions of molybdenum-containing precursors in ALD and CVD processes. In some embodiments, the precursors can be used for deposition of molybdenum metal films with low levels of incorporation of carbon and nitrogen. In some embodiments, the films are deposited using fluorine-free precursors in a presence of exposed silicon-containing layers without using etch stop layers. The precursor, in some embodiments, is a compound that includes molybdenum, at least one halogen that forms a bond with molybdenum, and at chamber least one organic ligand that includes an element selected from the group consisting of N, O, and S, that forms a bond with molybdenum, In another aspect, the precursor is a molybdenum, compound with at least one sulfur-containing ligand, and preferably no molybdenum-carbon bonds.
    Type: Grant
    Filed: March 6, 2020
    Date of Patent: November 21, 2023
    Assignee: Lam Research Corporation
    Inventor: Kyle Jordan Blakeney
  • Patent number: 11817341
    Abstract: A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module.
    Type: Grant
    Filed: February 23, 2022
    Date of Patent: November 14, 2023
    Assignee: Lam Research Corporation
    Inventor: Troy Alan Gomm
  • Patent number: 11798784
    Abstract: Methods and apparatus for processing a substrate in a multi-frequency plasma processing chamber are disclosed. The base RF signal pulses between a high power level and a low power level. Each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined power level and a second predefined power level as the base RF signal pulses. Alternatively or additionally, each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined RF frequency and a second predefined RF frequency as the base RF signal pulses. Techniques are disclosed for ascertaining in advance of production time the first and second predefined power levels and/or the first and second predefined RF frequencies for the non-base RF signals.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: October 24, 2023
    Assignee: Lam Research Corporation
    Inventors: John C. Valcore, Jr., Bradford J. Lyndaker
  • Patent number: 11798785
    Abstract: Systems and methods for reverse pulsing are described. One of the systems includes a controller, first and second source radio frequency (RF) generators, and first and second bias RF generators. The controller controls the first source RF generator to generate a first source pulsed signal, and controls the second source RF generator to generate a second source pulsed signal. The system includes a first match circuit that receives the first and second source pulsed signals and combines the first and second source pulsed signals. The controller controls the first bias RF generator to generate a first bias pulsed signal, and controls the second bias RF generator to generate a second bias pulsed signal. The system includes a second match circuit that receives the first and second bias pulsed signals and combines the first and second bias pulsed signals into a combined bias signal.
    Type: Grant
    Filed: September 11, 2017
    Date of Patent: October 24, 2023
    Assignee: Lam Research Corporation
    Inventors: Maolin Long, Zhongkui Tan, Ying Wu, Qian Fu, Alex Paterson, John Drewery
  • Patent number: 11796085
    Abstract: An apparatus may be provided that includes a substrate having one or more microfluidic valve structures. The valve structures are non-elastomeric, non-polymeric, non-metallic membrane valves for use in high-vacuum application. Such valves are functional even when the fluid-control side of the valve is exposed to a sub-atmospheric pressure field which may generally act to collapse/seal traditional elastomeric membrane valve.
    Type: Grant
    Filed: July 23, 2020
    Date of Patent: October 24, 2023
    Assignee: Lam Research Corporation
    Inventors: Mariusch Gregor, Theodoros Panagopoulos, Thorsten Bernd Lill
  • Patent number: 11798789
    Abstract: A first edge ring for a substrate support is provided. The first edge ring includes an annular-shaped body and one or more lift pin receiving elements. The annular-shaped body is sized and shaped to surround an upper portion of the substrate support. The annular-shaped body defines an upper surface, a lower surface, a radially inner surface, and a radially outer surface. The one or more lift pin receiving elements are disposed along the lower surface of the annular-shaped body and sized and shaped to receive and provide kinematic coupling with top ends respectively of three or more lift pins.
    Type: Grant
    Filed: September 10, 2018
    Date of Patent: October 24, 2023
    Assignee: Lam Research Corporation
    Inventors: Alejandro Sanchez, Grayson Ford, Darrell Ehrlich, Aravind Alwan, Kevin Leung, Anthony Contreras, Zhumin Han, Raphael Casaes, Joanna Wu
  • Patent number: 11792987
    Abstract: A three-dimensional (3D) memory structure includes memory cells and a plurality of oxide layers and a plurality of word line layers. The plurality of oxide layers and the plurality of word line layers are alternately stacked in a first direction. A plurality of double channel holes extend through the plurality of oxide layers and the plurality of word line layers in the first direction. The plurality of double channel holes have a peanut-shaped cross-section in a second direction that is transverse to the first direction.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: October 17, 2023
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Thorsten Lill, Meihua Shen, John Hoang, Hui-Jung Wu, Gereng Gunawan, Yang Pan
  • Patent number: 11791189
    Abstract: Various embodiments include a reflectometer and a reflectometry system for monitoring movements of a substrate, such as a silicon wafer. In one embodiment, a reflectometry system monitors and controls conditions associated with a substrate disposed within a process chamber. The process chamber includes a substrate-holding device having an actuator mechanism to control movement of the substrate with respect to the substrate-holding device. The reflectometry system includes a light source configured to emit a beam of light directed at the substrate, collection optics configured to receive light reflected from the substrate by the beam of light directed at the substrate and output a signal related to one or more conditions associated with the substrate, and a processor configured to process the signal and direct the actuator mechanism to control the movement of the substrate with respect to the substrate-holding device based on the signal. Other devices and methods are disclosed.
    Type: Grant
    Filed: October 5, 2018
    Date of Patent: October 17, 2023
    Assignee: Lam Research Corporation
    Inventors: Eric A. Pape, Dmitry Opaits, Jorge Luque, Jeffrey D. Bonde, Siyuan Tian
  • Patent number: 11791140
    Abstract: An apparatus for confining plasma within a plasma processing chamber is provided. The plasma processing chamber includes a lower electrode for supporting a substrate and an upper electrode disposed over the lower electrode. The apparatus is a confinement ring that includes a lower horizontal section extending between an inner lower radius and an outer radius of the confinement ring. The lower horizontal section includes an extension section that bends vertically downward at the inner lower radius, and the lower horizontal section further includes a plurality of slots. The confinement ring further includes an upper horizontal section extending between an inner upper radius and the outer radius of the confinement ring and a vertical section that integrally connects the lower horizontal section with the upper horizontal section. The extension section of the lower horizontal section is configured to surround the lower electrode when installed in the plasma processing chamber.
    Type: Grant
    Filed: April 26, 2022
    Date of Patent: October 17, 2023
    Assignee: Lam Research Corporation
    Inventors: Rajinder Dhindsa, Akira Koshiishi, Alexei Marakhatanov
  • Publication number: 20230326790
    Abstract: Methods of filling features including metal and dielectric surfaces with conductive materials involve cleaning the metal surfaces with little or no damage to the dielectric surfaces. After cleaning, the feature may be exposed to one or more reactants to fill the feature with the conductive material in an atomic layer deposition (ALD) or chemical vapor deposition (CVD) process. Deposition may be selective or non-selective to the metal surface. In some embodiments, the filled feature is barrier-less, such that the conductive material directly contacts the metal and dielectric surfaces with no interposing barrier or adhesion layer.
    Type: Application
    Filed: May 21, 2021
    Publication date: October 12, 2023
    Applicant: Lam Research Corporation
    Inventors: Raihan M. TARAFDAR, Chiukin Steven LAI, Jeong-Seok NA
  • Patent number: 11784047
    Abstract: Thin tin oxide films can be used in semiconductor device manufacturing. In one implementation, a method of processing a semiconductor substrate includes: providing a semiconductor substrate having a plurality of protruding features residing on an etch stop layer material, and an exposed tin oxide layer in contact with both the protruding features and the etch stop layer material, where the tin oxide layer covers both sidewalls and horizontal surfaces of the protruding features; and then completely removing the tin oxide layer from horizontal surfaces of the semiconductor substrate without completely removing the tin oxide layer residing at the sidewalls of the protruding features. Next, the protruding features can be removed without completely removing the tin oxide layer that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers.
    Type: Grant
    Filed: April 22, 2021
    Date of Patent: October 10, 2023
    Assignee: Lam Research Corporation
    Inventors: David Charles Smith, Richard Wise, Arpan Pravin Mahorowala, Patrick A. van Cleemput, Bart J. van Schravendijk
  • Patent number: 11781650
    Abstract: An edge seal for sealing an outer surface of a lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber, the lower electrode assembly including an annular groove defined between a lower member and an upper member of the lower electrode assembly. The edge seal includes an elastomeric band configured to be arranged within the groove, the elastomeric band having an annular upper surface, an annular lower surface, an inner surface, and an outer surface. When the elastomeric band is in an uncompressed state, the outer surface of the elastomeric band is concave. When the upper and lower surfaces are axially compressed at least 1% such that the elastomeric band is in a compressed state, an outward bulging of the outer surface is not greater than a predetermined distance. The predetermined distance corresponds to a maximum outer diameter of the elastomeric band in the uncompressed state.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: October 10, 2023
    Assignee: LAM RESEARCH CORPORATION
    Inventors: David Schaefer, Ambarish Chhatre, Keith William Gaff, Sung Je Kim, Brooke Mesler Lai
  • Patent number: 11784027
    Abstract: An isolation system includes an input junction coupled to one or more RF power supplies via a match network for receiving radio frequency (RF) power. The isolation system further includes a plurality of channel paths connected to the input junction for distributing the RF power among the channel paths. The isolation system includes an output junction connected between each of the channel paths and to an electrode of a plasma chamber for receiving portions of the distributed RF power to output combined power and providing the combined RF power to the electrode. Each of the channel paths includes bottom and top capacitors for blocking a signal of the different type than that of the RF power. The isolation system avoids a risk of electrical arcing created by a voltage difference between an RF terminal and a non-RF terminal when the terminals are placed proximate to each other.
    Type: Grant
    Filed: January 11, 2022
    Date of Patent: October 10, 2023
    Assignee: Lam Research Corporation
    Inventors: Hyungjoon Kim, Sunil Kapoor, Karl Leeser, Vince Burkhart
  • Patent number: 11768011
    Abstract: Tubing structures are connected to each other to form a tubing assembly having one or more fluid pathways from a fluid entrance to a fluid exit. A heating device is bonded to the tubing structures along a length of the tubing assembly. The heating device has a flexibility to follow along one or more bends present along the length of the tubing assembly. The heating device includes one or more heater traces embedded within an encasing material. The encasing material is thermally conductive and electrically insulative. The one or more heater traces are formed of a material that generates heat in the presence of an electrical current. The heating device has a continuous and unbroken structure along the length of the tubing assembly. An encapsulation layer of thermal insulating material is disposed over the tubing assembly and covers the heating device.
    Type: Grant
    Filed: March 13, 2020
    Date of Patent: September 26, 2023
    Assignee: Lam Research Corporation
    Inventor: Karl F. Leeser
  • Patent number: 11761079
    Abstract: In some examples, a method for conditioning a wafer processing chamber comprises setting a pressure in the chamber to a predetermined pressure range, setting a temperature of the chamber to a predetermined temperature, and supplying a process gas mixture to a gas distribution device within the chamber. A plasma is struck within the chamber and a condition in the chamber is monitored. Based on a detection of the monitored condition meeting or transgressing a threshold value, a chamber conditioning operation is implemented. The chamber conditioning operation may include depositing a preconditioning film onto an internal surface of the chamber, depositing a silicon oxycarbide (SiCO) film onto the preconditioning film, and depositing a protective layer onto the SiCO film.
    Type: Grant
    Filed: December 6, 2018
    Date of Patent: September 19, 2023
    Assignee: Lam Research Corporation
    Inventors: Fengyuan Lai, Bo Gong, Guangbi Yuan, Chen-Hua Hsu, Bhadri Varadarajan