Abstract: Methods, systems, and devices for memory operations are described. A host system may obtain data for writing to a memory system. The host system may send, to the memory system, an indication that the data is to be written to the memory system, and the memory system may remove invalid data at the memory system until the memory system has sufficient resources to store the data. Based on the memory system having sufficient resources, the memory system may delay background operations at the memory system until the data has been written to the memory system. The memory system may also create a restore point based on the memory system having sufficient resources and receiving the data. In other examples, the removal of invalid data at the memory system may be delayed until after the data is written to the memory system.

Abstract: Disclosed in some examples are systems, methods, devices, and machine-readable mediums to detect and terminate programmable atomic transactions that are stuck in an infinite loop. In order to detect and terminate these transactions, the programmable atomic unit may use an instruction counter that increments each time an instruction is executed during execution of a programmable atomic transaction. If the instruction counter meets or exceeds a threshold instruction execution limit without reaching the termination instruction, the programmable atomic transaction may be terminated, all resources used (e.g., memory locks) may be freed, and a response may be sent to a calling processor.

Abstract: The disclosed embodiments relate to logging activities of memory devices and adjusting the operation of a controller based on the activities. In one embodiment, a method comprises monitoring, by a memory device, die temperatures and data sizes of commands issued to the memory device; determining, by the memory device, a target size for a buffer based on the die temperatures and data sizes; and adjusting, by the memory device, a current size of the buffer to meet the target size.

Abstract: Methods, systems, and devices for caching identifiers for access commands are described. A memory sub-system can receive an access command to perform an access operation on a transfer unit of the memory sub-system. The memory sub-system can store an identifier associated with the access command in a memory component and can generate an internal command using a first core of the memory sub-system. In some embodiments, the memory sub-system can store the identifier in a shared memory that is accessible by the first core and can issue the internal command to perform the access operation on the memory sub-system.

Abstract: A memory device includes a plurality of memory dies, each memory die of the plurality of memory dies comprising a memory array and a power management component, operatively coupled with the memory array. The power management component sends a test value to one or more other power management components on one or more other memory dies of the plurality of memory dies and receives one or more other test values from the one or more other power management components. The power management component compares the test value and the one or more other test values to a set of expected values, and responsive to the test value and the one or more other test values matching the set of expected values, determines that signal connections between the power management component and the one or more other power management components are functional.

Abstract: Apparatus and methods are disclosed, including memory devices and systems. Example memory devices, systems and methods include a stack of memory dies, a controller die, and a buffer. Example memory devices, systems and methods include one or more neuromorphic layers logically coupled between one or more dies in the stack of memory dies and a host interface of the controller die.

Abstract: An apparatus includes a subword driver configured to drive a subword line, wherein the subword driver includes a transistor coupled to the subword line, a word driver control circuit configured to provide a first control signal and a second control signal, and a word driver configured to receive the first and second control signals, and based on the first control signal provide a driving signal including a plurality of reset pulses to the transistor of the subword driver to activate the transistor a corresponding plurality of times to discharge the subword line, and further provide the driving signal including a transition following the plurality of reset pulses to activate the transistor to further discharge the subword line.

Abstract: Methods, systems, and devices for techniques for enhanced read performance on blocks of memory cells are described. The method may involve selecting a first block of memory cells from a set of blocks of memory cells of a memory system based on a condition of the first block of memory cells being met and setting one or more programming parameters corresponding to the first block of memory cells such that the one or more programming parameters are within a threshold value of one or more programming parameters corresponding to a second block associated with a storage density different from a storage density of the first block of memory cells. Further, the method may involve performing an operation on the block of memory cells according to the one or more programming parameters.

Abstract: A method includes forming at least a portion of a first superblock using a first subset of blocks from at least one memory die of a memory sub-system and forming at least a portion of a second superblock using a second subset of blocks from the at least one memory die of the memory sub-system.

Abstract: Described apparatuses and methods relate to a read data path for a memory system. The memory system may include logic that receives data and associated metadata from a memory. The logic may perform a reliability check on the data using the associated metadata to determine if the data has an error. If the data is determined not to include an error, the data may be transmitted to a requestor. If the data is determined to include an error, however, a data recovery process may be initiated to recover the data. This may reduce a likelihood the memory system returns corrupted data to a requestor. The memory system may process a different read request at least partially in parallel with the data recovery process to increase throughput or reduce latency. In some cases, the data recovery process may involve one or more techniques related to redundant array of disks (RAID) technology.

Abstract: The disclosure includes apparatuses, methods, and systems for pre-decoder circuitry. An embodiment includes a memory array including a plurality of memory cells, decoder circuitry coupled to the array and comprising a first and second n-type transistor having a first and second gate, respectively, and pre-decoder circuitry to provide a bias condition for the first and second gate to provide a selection signal to one of the cells. The bias condition comprises a positive voltage for the first gate and a negative voltage for the second gate for a positive memory cell configuration, and zero volts for the first gate and the negative voltage for the second gate for a negative memory cell configuration. The pre-decoder circuitry comprises first pre-decoder circuitry to provide the positive voltage for the first gate and the zero volts for the second gate and second pre-decoder circuitry to provide the negative voltage for the second gate.

Abstract: A system includes a memory device having a plurality of memory dies and at least a first spare memory die and a processing device coupled to the memory device. The processing device is to perform operations including: tracking a value of a write counter representing a number of write operations performed at the plurality of memory dies; activating the first spare memory die in response to detecting a failure of a first memory die of the plurality of memory dies; storing an offset value of the write counter in response to activating the first spare memory die; and commanding the memory device to modify die trim settings of the first spare memory die at predetermined check point values of the write counter that are offset from the offset value.

Abstract: Apparatuses and methods can be related to implementing adjustable data protection schemes using artificial intelligence. Implementing adjustable data protection schemes can include receiving failure data for the plurality of memory devices and receiving an indication of a failure of a stripe of the plurality of memory devices based on the failure data. Based on failure data, and the indication of the failure of the stripe of the plurality of memory devices, a data protection scheme adjustment can be generated for the memory device. The data protection scheme adjustment can be received from the AI accelerator and can be implemented by a plurality of memory devices.

Abstract: Methods, systems, and devices for temperature exception tracking in a temperature log for a memory system are described. The memory system may store the temperature log separate from data to which the temperature information corresponds. For example, a memory device may store data in a relatively higher-level cell and the corresponding temperature information in a relatively lower-level cell. To perform a write operation, the memory system may determine a current temperature at which the data is being written or was written to a partition of a memory device and may indicate in the temperature log if the current temperature is entering a temperature range that is outside a threshold temperature (e.g., a nominal temperature). To perform a read operation, the memory system may determine if the data to read was written to the memory device outside the threshold temperature to determine whether to perform temperature compensation for the read operation.

Abstract: Methods, systems, and devices for centralized error correction circuit are described. An apparatus may include a non-volatile memory disposed on a first die and a volatile memory disposed on a second die (different than the first die). The apparatus may also include an interface controller disposed on a third die (different than the first die and the second die). The interface controller may be coupled with the non-volatile memory and the volatile memory and may include an error correction circuit that is configured to operate on one or more codewords received from the volatile memory.

Abstract: Methods, systems, and devices for logical-to-physical (L2P) mapping compression techniques are described. A memory system may use an L2P mapping to map logical addresses to physical addresses of the memory system. The L2P mapping may be a hierarchical L2P mapping divided into multiple levels or subsets that are used to identify a physical address corresponding to a logical address. The memory system may write data to a set of physical addresses that are consecutively indexed and may set a flag in an entry of a second-level of the L2P mapping (e.g., of a three-level L2P mapping) to indicate that the entry is associated with a starting physical address of the consecutively indexed physical addresses. The memory system may subsequently read the data starting at the starting physical address based on the flag (e.g., bypassing reading an entry of a lowest-level of the L2P mapping to determine the physical address).

Abstract: DRAM circuitry comprises a memory array comprising memory cells individually comprising a transistor and a charge-storage device. The transistors individually comprise two source/drain regions having a gate there-between that is part of one of multiple wordlines of the memory array. One of the source/drain regions is electrically coupled to one of the charge-storage devices. The other of the source/drain regions is electrically coupled to one of multiple sense lines of the memory array. Peripheral circuitry comprises wordline-driver transistors having gates which individually comprise one of the wordlines and comprises sense-line-amplifier transistors having gates which individually comprise one of the sense lines. The sense-line-amplifier transistors and the wordline-driver transistors individually are a finFET having at least one fin comprising a channel region of the respective finFET.

Abstract: Methods, systems, and devices for signal path biasing in an electronic system (e.g., a memory system) are described. In one example, a memory device, a host device, or both may be configured to bias a signal path, between an idle state and an information transfer or between an information transfer and an idle state, to an intermediate or mid-bias voltage level, which may reduce signal interference associated with such transitions. In various examples, the described biasing to a voltage, such as a mid-bias voltage, may be associated with an access command or other command for information to be communicated between devices of the electronic system, such as a command for information to be communicated between a memory device and a host device.

Abstract: A production host can learn the production state awareness (PSA) modes supported by a memory device and select a particular of one of the supported PSA modes. The memory device can receive host image data from the production host and write the host image data according to the selected PSA mode. The memory device can set a PSA state to load complete after writing the host image data. The memory device can thereby be better situated for being soldered to a memory sub-system.

Abstract: Systems, methods, and computer readable media for tracking memory deltas at a cache line granularity. The method includes receiving a base address for a physical memory region, receiving a list of empty log memory buffers associated with a delta logging session, and responsive to determining that a cache line associated with the physical memory region may be in a modified state, storing the modified cache line and metadata associated with the modified cache line in an active log memory buffer referenced by the list of empty log memory buffers. The method also includes determining that the active log memory buffer is full and appending a flag to the active log memory buffer, thereby marking the active log memory buffer as a full log memory buffer. The method also includes storing a list of full log memory buffers, wherein the list is visible to a host processor.