Abstract: A semiconductor device includes first and second semiconductor elements, and first and second circuits at different potentials. The second semiconductor element, electrically connected to the first semiconductor element, relays mutual signals between the first and the second circuits, while insulating them. The semiconductor device further includes a first terminal lead electrically connected to the first semiconductor element, a first wire connected to the first and the second semiconductor elements, and a second wire connected to the first semiconductor element and the first terminal lead. The first wire contains a first metal. The second wire includes a first core containing a second metal, and a first surface layer containing a third metal and covering the first core. The second metal has a smaller atomic number than that of the first metal. The third metal has a greater bonding strength with respect to the first terminal lead than the second metal.

Abstract: An acceleration sensor includes a semiconductor substrate that has a cavity formed in an interior, a fixed structure that includes a fixed electrode supported by the semiconductor substrate in a state of floating with respect to the cavity, and a movable structure that includes a movable electrode supported by the semiconductor substrate via an elastic structure in a state of floating with respect to the cavity and displacing with respect to the fixed electrode. The elastic structure includes a first end portion supported by the semiconductor substrate, a second end portion connected to the movable structure, and an intermediate portion connecting the first end portion and the second end portion and has a rectilinearly-extending rectilinear portion at least at a portion of the intermediate portion and the rectilinear portion includes a plurality of rectilinear frames extending in parallel to each other in a direction in which the rectilinear portion extends.

Abstract: Provided is a Hall element that detects a magnetic field. The Hall element includes a substrate including a semiconductor region, a first drive electrode arranged on the substrate, a first ground electrode arranged on the substrate separately from the first drive electrode in a first direction, a second ground electrode arranged on the substrate separately from the first drive electrode in a second direction different from the first direction, and a detection electrode group including a first electrode group that detects a Hall voltage generated by a current of components perpendicular to a surface of the substrate, the current flowing from the first drive electrode to the first ground electrode and the second ground electrode.

Abstract: A semiconductor device includes a semiconductor layer that has a main surface, an electrode pad that is formed on the main surface, a rewiring that has a first wiring surface connected to the electrode pad and a second wiring surface positioned on a side opposite to the first wiring surface and being roughened, the rewiring being formed on the main surface such as to be drawn out to a region outside the electrode pad, and a resin that covers the second wiring surface on the main surface and that seals the rewiring.

Abstract: A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.

Abstract: A semiconductor device includes a conductive support member, a first semiconductor element, a second semiconductor element, an insulating element, and a sealing resin. The conductive support member includes a first die pad and a second die pad, which are separated from each other in a first direction. The first die pad and the second die pad overlap each other when viewed along the first direction. When viewed along a thickness direction, a peripheral edge of the first die pad has a first near-angle portion including a first end portion in a second direction orthogonal to both the thickness direction and the first direction. The first near-angle portion is separated from the second die pad in the first direction toward the first end portion in the second direction.

Abstract: A terahertz device includes a terahertz element, a sealing resin, a wiring layer and a frame-shaped member. The terahertz element that performs conversion between terahertz waves and electric energy. The terahertz element has an element front surface and an element back surface spaced apart from each other in a first direction. The sealing resin covers the terahertz element. The wiring layer is electrically connected to the terahertz element. A frame-shaped member is made of a conductive material and arranged around the terahertz element as viewed in the first direction. The frame-shaped member has a reflective surface capable of reflecting the terahertz waves.

Abstract: A frequency characteristic measurement apparatus includes a calibration circuit configured to perform a SOLT calibration on cable end surfaces, a first measurement circuit measuring S-parameters of a first substrate provided with a DUT, after the SOLT calibration by the calibration circuit, a second measurement circuit measuring S-parameters of a second substrate after the SOLT calibration by the calibration circuit, and an extraction circuit performing a vector operation of a measurement result of the first measurement circuit and a measurement result of the second measurement circuit to extract S-parameters of the DUT. The extraction circuit assumes that a reflection of each of first second fixtures obtained by virtually dividing the second substrate into two parts at the center, on an end surface of the second substrate is equal to or smaller than a reflection on an end surface of the second substrate without the virtual division at the center.

Abstract: A semiconductor device includes a semiconductor element, a first lead electrically connected to the semiconductor element, a sealing resin that covers the semiconductor element and a part of the first lead, and a recess formed in a surface flush with a back surface of the sealing resin. The sealing resin also has a front surface opposite to the back surface in a thickness direction, and a side surface connecting the front surface and the back surface to each other. The recess is formed, in part, by a part of the first lead that is exposed from the back surface of the sealing resin. The recess has an outer edge that forms a closed shape, as viewed in the thickness direction, within a region that includes the back surface of the sealing resin and the first lead.

Abstract: A nitride semiconductor device 1 includes an SiC substrate 2 of a hexagonal crystal system that has a first main surface 2a and a second main surface 2b at an opposite side thereof and a nitride epitaxial layer 20 that is formed on the first main surface 2a and the first main surface 2a has an off angle of greater than 1° with respect to a c-plane of the hexagonal crystal.

Abstract: A nitride semiconductor module includes a nitride semiconductor device, forming a transistor, and a control circuit. The nitride semiconductor device includes a control electrode arranged on a passivation layer between gate and drain electrodes. The control circuit generates first and second control voltages. The first control voltage, which shifts between a first voltage level and a lower second voltage level, controls a voltage applied between the gate and source electrodes. The second control voltage, which shifts between a third voltage and a lower fourth voltage level, is applied between the control and source electrodes. The control circuit generates the first and second control voltages during a turn-off operation of the transistor so that a shifting completion time of the second control voltage from the third to fourth voltage level is earlier than that of the first control voltage from the first to second voltage level.

Abstract: A semiconductor device includes a semiconductor chip, a plurality of leads that each includes a lead body portion which has a mounting portion which includes an upper surface whereon a semiconductor chip is bonded, and a lead connecting portion for external connection which projects downward from a lower surface of the lead body portion, a first sealing resin that seals a space that is defined by each lead body portion and each lead connecting portion of the plurality of leads in a region below the upper surface of each lead body portion of the plurality of leads, and a second sealing resin that seals the semiconductor chip in a region above the upper surface of each lead body portion of the plurality of leads.

Abstract: A gas concentration measurement system includes a limiting current-type gas sensor, a voltage source connected to the limiting current-type gas sensor, a current detector connected to the limiting current-type gas sensor, and a gas concentration arithmetic unit connected to the current detector. The voltage source supplies first and second voltages to the limiting current-type gas sensor. The first and second voltages generate first and second limiting currents corresponding to first and second gases, respectively, in the limiting current-type gas sensor. The current detector acquires first and second limiting current values of the limiting current-type gas sensor when the first and second voltages are applied to the limiting current-type gas sensor, respectively.

Abstract: A sensor apparatus includes a resonator, a transducer, a damping resistor, a first switch, a filter stage, a second switch, and a noise rejection stage. The transducer is configured to detect a position of the resonator. The damping resistor is configured to electrostatically actuate the transducer and convert a thermomechanical noise of the resonator to an electromechanical noise. The first switch is configured to receive a first signal from the transducer. The filter stage is configured to receive the first signal and adjust a phase and a gain of the first signal and output a filtered first signal. The second switch is configured to receive a second signal from the transducer. The noise rejection stage is configured to receive the filtered first signal and the second signal and reduce the filtered first signal from an output signal.

Abstract: In a first mode, a first feedback controller generates a first control signal SCTRL1 based on a signal at a first feedback pin, so as to control a first pre-driver. A second feedback controller ¥ generates a second control signal based on a signal at a second feedback pin, so as to control a second pre-driver. In a second mode, the first feedback controller ¥ generates the first control signal based on a signal at the first feedback pin, so as to control the first pre-driver. The second pre-driver drives the second pre-driver based on a third control signal received from a first circuit block.

Abstract: The semiconductor device of the present invention includes a semiconductor layer which includes an active portion and a gate finger portion, an MIS transistor which is formed at the active portion and includes a gate trench as well as a source region, a channel region and a drain region sequentially along a side surface of the gate trench, a plurality of first gate finger trenches arranged by an extended portion of the gate trench at the gate finger portion, a gate electrode embedded each in the gate trench and the first gate finger trench, a second conductive-type first bottom-portion impurity region formed at least at a bottom portion of the first gate finger trench, a gate finger which crosses the plurality of first gate finger trenches and is electrically connected to the gate electrode, and a second conductive-type electric field relaxation region which is formed more deeply than the bottom portion of the first gate finger trench between the mutually adjacent first gate finger trenches.

Abstract: A resistor includes a first insulator, a resistive body, a second insulator, a pair of electrodes, and a covering body. The first insulator has a first obverse surface facing in a thickness direction thereof. The resistive body is provided on the first obverse surface. The second insulator covers the resistive body. The pair of electrodes are electrically connected to the resistive body at both sides in a first direction perpendicular to the thickness direction. The covering body is formed on at least one of the first insulator and the second insulator. The covering body has electrical conductivity. The first layer is in contact with at least one of the first insulator and the second insulator.

Abstract: A semiconductor device includes a semiconductor chip which has a main surface and a main transistor which includes a first system transistor and a second system transistor that are each formed in the main surface so as to be individually controlled, in which the first system transistor includes a first composite cell which is constituted of an ?-number (??2) of first unit transistors that are arrayed so as to be mutually adjacent to the main surface and that each have a first trench structure including a first electrode embedded in a first trench formed in the main surface, and the second system transistor includes a second composite cell which is arranged so as to be adjacent to the first composite cell and constituted of a ?-number (??2) of second unit transistors that are arrayed so as to be mutually adjacent to the main surface and that each have a second trench structure including a second electrode embedded in a second trench formed in the main surface.