Abstract: A semiconductor device has a first substrate and a first electrical component disposed over the first substrate. A first support frame is disposed over the first substrate. The first support frame has a horizontal support channel extending across the first substrate and a vertical support brace extending from the horizontal support channel to the first substrate. The first support frame can have a vertical shielding partition extending from the horizontal support channel to the first substrate. An encapsulant is deposited over the first electrical component and first substrate and around the first support frame. A second electrical component is disposed over the first electrical component. A second substrate is disposed over the first support frame. A second electrical component is disposed over the second substrate. A third substrate is disposed over the second substrate. A second support frame is disposed over the second substrate.

Abstract: A semiconductor device has a first package layer. A first shielding layer is formed over the first package layer. The first shielding layer is patterned to form a redistribution layer. An electrical component is disposed over the redistribution layer. An encapsulant is deposited over the electrical component. A second shielding layer is formed over the encapsulant. The second shielding layer is patterned. The patterning of the first shielding layer and second shielding layer can be done with a laser. The second shielding layer can be patterned to form an antenna.

Abstract: An integrated circuit and a method for designing an IC wherein the base or host chip is bonded to smaller chiplets via DBI technology. The bonding of chip to chiplet creates an uneven or multi-level surface of the overall chip requiring a releveling for future bonding. The uneven surface is built up with plating of bumps and subsequently releveled with various methods including planarization.

Abstract: In some examples a wafer chip scale package (WCSP) includes a semiconductor die having a device side in which a circuit is formed, and a redistribution layer (RDL) coupled to the device side that is positioned within an insulating member. In addition, the WCSP includes a scribe seal circumscribing the circuit along the device side, wherein the RDL abuts the scribe seal. Further, the WCSP includes a conductive member coupled to the RDL. The conductive member is configured to receive a solder member, and the insulating member does not extend along the device side of the semiconductor die between the conductive member and a portion of an outer perimeter of the WCSP closest to the conductive member.

Abstract: Systems and methods are provided for a system in a package (SiP) connectivity using one or more ultra short reach (USR) chiplets. The USR chiplet can receive/transmit data at a lower throughput and transmit/receive that data at a higher throughput over ultra short distances. The USR chiplet can be connected to a main integrated circuit (IC) using a high density interconnect or integrated with the main IC in a mold material. The USR chip can enable the main IC to transfer data over a substrate at a higher speed using a fewer number of traces.

Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive bump over and electrically connected to the chip. The chip package structure includes a ring-like structure over and electrically insulated from the chip. The ring-like structure surrounds the conductive bump, and the ring-like structure and the conductive bump are made of a same material.

Abstract: The present disclosure provides a package device. The package device includes a first integrated circuit chip, a second integrated circuit chip, a first input/output pin, and a first electrostatic discharge protection element. The first integrated circuit chip includes a first internal circuit and a first input/output pad disposed on the first integrated circuit chip and coupled to the first internal circuit. The second integrated circuit chip is stacked on the first integrated circuit chip. The second integrated circuit chip includes a second internal circuit and a second input/output pad disposed on the second integrated circuit chip and coupled to the second internal circuit. The first input/output pin is coupled to the first integrated circuit chip and the second integrated circuit chip. The first electrostatic discharge protection element is coupled between the first input/output pad and the first internal circuit.

Abstract: In an embodiment, a structure includes a core substrate, a redistribution structure coupled to a first side of the core substrate, the redistribution structure including a plurality of redistribution layers, each of the plurality of redistribution layers comprising a dielectric layer and a metallization layer, and a first local interconnect component embedded in a first redistribution layer of the plurality of redistribution layers, the first local interconnect component including a substrate, an interconnect structure on the substrate, and bond pads on the interconnect structure, the bond pads of the first local interconnect component physically contacting a metallization layer of a second redistribution layer, the second redistribution layer being adjacent the first redistribution layer, the metallization layer of the second redistribution layer comprising first conductive vias, the dielectric layer of the first redistribution layer encapsulating the first local interconnect component.

Abstract: Provided is a control module including a printed circuit board, an IC, and a shielding cover. The shielding cover is provided with a dispensing hole for adhesive dispensing. The IC is soldered onto the printed circuit board, and an adhesive may be dispensed between the IC and the printed circuit board through the dispensing hole. A method for manufacturing a control module is also provided.

Abstract: System, method, and silicon chip package for providing structural strength, heat dissipation and electrical connectivity using “W” shaped frame bonded to the one or more dies, wherein the “W” shaped frame provides compression strength to the silicon chip package when the one or more dies are bonded, and electrically conductivity between for the one or more dies to leads of silicon chip package, and heat dissipation for the silicon chip package.

Abstract: A 3D flash memory device such as a 3D AND flash memory device is provided. The 3D flash memory device includes a substrate, a conductive layer, a 3D flash memory array, and through-array vias (TAVs). The substrate includes a memory cell region and a passive device region. The conductive layer is formed on the substrate, and the conductive layer includes: a first circuit disposed at the memory cell region and a second circuit of a passive device disposed at the passive device region. The 3D flash memory array is formed on the first circuit of the memory cell region. The TAVs are respectively formed on the second circuit of the passive device disposed at the passive device region and connected to at least one end of the second circuit.

Abstract: An image sensor includes a semiconductor substrate, a gate dielectric layer, a gate electrode, a protection oxide film, and a nitride hard mask. The gate dielectric layer is over the semiconductor substrate. The gate electrode is over the gate dielectric layer. An entirety of a first portion of the gate dielectric layer directly under the gate electrode is of uniform thickness. The protection oxide film is in contact with a top surface of the gate electrode. The gate dielectric layer extends beyond a sidewall of the protection oxide film. The nitride hard mask is in contact with a top surface of the protection oxide film.

Abstract: Provided herein are approaches for forming an image sensor with increased well depth due to cryogenic ion channeling of ultra-high energy (UHE) ions. In some embodiments, a method may include providing a wafer of a semiconductor device, the semiconductor device including a photoelectric conversion region, and cooling the wafer to a temperature less than ?50° C. The method may further include performing an ion implant to the photoelectric conversion region to form a photodiode well after cooling the wafer.

Abstract: Embodiments of the present disclosure generally relate to methods of cleaning a structure and methods of depositing a capping layer in a structure. The method of cleaning a structure includes suppling a cleaning gas, including a first gas including nitrogen (N) and a second gas including fluorine (F), to a bottom surface of a structure. The cleaning gas removes unwanted metal oxide and etch residue from the bottom surface of the structure. The method of depositing a capping layer includes depositing the capping layer over the bottom surface of the structure. The methods described herein reduce the amount of unwanted metal oxides and residue, which improves adhesion of deposited capping layers.

Abstract: An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.

Abstract: An embodiment is a device including a first fin extending from a substrate, a first gate stack over and along sidewalls of the first fin, a first gate spacer disposed along a sidewall of the first gate stack, and a first source/drain region in the first fin and adjacent the first gate spacer. The first source/drain region including a first insulator layer on the first fin, and a first epitaxial layer on the first insulator layer.

Abstract: An electronics package includes an electrically insulating substrate having a first surface and a second surface, an adhesive layer positioned on the first surface of the electrically insulating substrate, and an electrical component having a top surface coupled to the adhesive layer on a surface thereof opposite the electrically insulating substrate, the electrical component having contact pads on the top surface. Vias are formed through the electrically insulating substrate and the adhesive layer at locations corresponding to the contact pads by way of a mechanical punching operation, with each of the vias having a via wall extending from the second surface of the electrically insulating substrate to a respective contact pad. At each via, the electrically insulating substrate comprises a protrusion extending outwardly from the first surface thereof so as to cover at least part of the adhesive layer in forming part of the via wall.

Abstract: Semiconductor devices including electrically-isolated extensions and associated systems and methods are disclosed herein. An electrically-isolated extension may be coupled to a corresponding connection pad that is attached to a surface of a device. The electrically-isolated extensions may extend at least partially through one or more layers at or near the surface and toward a substrate or an inner portion thereof.

Abstract: A semiconductor package structure includes a conductive pad formed over a substrate. The structure also includes a passivation layer formed over the conductive pad. The structure also includes a first via structure formed through the passivation layer and in contact with the conductive pad. The structure also includes a first encapsulating material surrounding the first via structure. The structure also includes a redistribution layer structure formed over the first via structure. The first via structure has a lateral extending portion embedded in the first encapsulating material near a top surface of the first via structure.

Abstract: A bonded structure can include a first reconstituted element comprising a first element and having a first side comprising a first bonding surface and a second side opposite the first side. The first reconstituted element can comprise a first protective material disposed about a first sidewall surface of the first element. The bonded structure can comprise a second reconstituted element comprising a second element and having a first side comprising a second bonding surface and a second side opposite the first side. The first reconstituted element can comprise a second protective material disposed about a second sidewall surface of the second element. The second bonding surface of the first side of the second reconstituted element can be directly bonded to the first bonding surface of the first side of the first reconstituted element without an intervening adhesive along a bonding interface.