Abstract: Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes a first process chamber configured to supply a development liquid to a substrate that is carried into the first process chamber after an exposure process is performed on the substrate, a second process chamber configured to treat the substrate through a supercritical fluid, a feeding robot configured to transfer the substrate from the first process chamber to the second process chamber, and a controller configured to control the feeding robot such that the substrate is transferred to the second process chamber in a state in which the development liquid supplied by the first process chamber resides in the substrate.

Abstract: A fiber-type electronic device comprising a pattern for electronic devices stacked on a fiber filament substrate is provided. It is possible to manufacture an electronic device directly on a fiber filament substrate by applying the pattern for electronic devices. Thus, it can be widely used for wearable devices and the like. The pattern for electronic devices is manufactured by a method for forming a pattern for electronic devices comprising an exposure process using a maskless exposure apparatus. Thus, it is possible to manufacture a pattern for electronic devices on a fiber filament substrate through a continuous process and thus to increase the process efficiency.

Abstract: A photoresist developer composition contains: a quaternary alkyl ammonium compound; and a corrosion inhibitor. The corrosion inhibitor contains a silane-based compound and an azole-based compound A manufacturing method of a semiconductor package includes using the photoresist developer composition.

Abstract: Extreme ultraviolet (EUV) lithographic patterning methods are provided which implement a surface-hardened EUV resist mask to pattern features in multiple layers. A layer of EUV resist material is formed on a substrate. An EUV resist mask is formed by exposing and developing the layer of EUV resist material. A surface-hardened EUV resist mask is formed by applying a surface treatment to an upper surface of the EUV resist mask to form an etch-resistant layer that is embedded in the upper surface of the EUV resist mask. At least one layer of the substrate is patterned using the surface-hardened EUV resist mask. The surface treatment can be implemented using a neutral atom beam (NAB) process which is configured to implant a chemical or metallic species into the upper surface of the EUV resist mask to form the etch-resistant layer.

Abstract: Disclosed is a production method of a multi-layered printed wiring board, including the following steps 1 to 3: Step 1: a step of laminating, on a substrate with inner layer circuit, a metal foil with adhesive layer including a support, a metal foil having a thickness of 3 ?m or less and ? or less relative to the thickness of the inner layer circuit, and an organic adhesive layer having a thickness of 10 ?m or less in this order, via an organic insulating resin layer such that the organic insulating resin layer and the organic adhesive layer are opposed to each other, and then releasing the support to form a laminated sheet (a) having the metal foil as an outer layer metal foil layer; Step 2: a step of irradiating the laminated sheet (a) with a laser to bore the outer layer metal foil layer, the organic adhesive layer, and the organic insulating resin layer to form a bored laminated sheet (b) having a blind via hole; and Step 3: a step of forming an outer layer circuit connected with the inner layer circui

Abstract: Provided are a material for detecting photoresist and a method for detecting photoresist using the same. The material for detecting photoresist may include a macrocyclic molecule having a hollow structure and a fluorescent substance which is labeled on the macrocyclic molecule, and the macrocyclic molecule is at least one of cyclodexrin, cucurbituril, calixarene, pillararene and catenane.

Abstract: In one aspect, there is provided a method of creating a microstructure pattern on an exterior surface of an aircraft, boat, automobile or other vehicle is disclosed. A layer of photopolymer (44) is applied to the top coat or substrate (43) by nozzles (45). The photopolymer is selectively irradiated to activate its photoinitiator and the unirradiated polymer is removed. The irradiation can be via a mask (49) which does not come into contact with the polymer, or via a beam splitting arrangement (63, 64) or a diffraction grating (71). The pattern can be formed by either leaving the exposed photopolymer in situ, or using the exposed photopolymer to mask the substrate, etching the substrate, and then removing the exposed photopolymer.

Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include a film formation process, and a exposure process. The film formation process forms a pattern formation material film on a base body. The pattern formation material film includes a pattern formation material including a first portion and a second portion. The first portion includes at least one of acrylate or methacrylate. The second portion includes an alicyclic compound and a carbonyl group. The alicyclic compound has an ester bond to the at least one of the acrylate or the methacrylate. The carbonyl group is bonded to the alicyclic compound. The exposure process causes the pattern formation material film to expose to a metal compound including a metallic element.

Abstract: The present disclosure provides lithography resist materials and corresponding lithography techniques for improving lithography resolution, in particular, by reducing swelling of resist layers during development. An exemplary lithography method includes performing a treatment process on a resist layer to cause cross-linking of acid labile group components of the resist layer via cross-linkable functional components, performing an exposure process on the resist layer, and performing a development process on the resist layer. In some implementations, the resist layer includes an exposed portion and an unexposed portion after the exposure process, and the treatment process reduces solubility of the unexposed portion to a developer used during the development process by increasing a molecular weight of a polymer in the unexposed portion. The treatment process is performed before or after the exposure process.

Abstract: Methods for forming a semiconductor structure including using a photoresist material are provided. The method for forming a semiconductor structure includes forming a material layer over a substrate and forming a photoresist layer over the material layer. The method for forming a semiconductor structure further includes performing an exposure process on the photoresist layer and developing the photoresist layer. In addition, the photoresist layer is made of a photoresist material comprising a photosensitive polymer, and the photosensitive polymer has a first photosensitive functional group bonding to a main chain of the photosensitive polymer and a first acid labile group bonding to the first photosensitive functional group.

Abstract: A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.

Abstract: A functional device pattern is formed in a self-aligned multiple patterning process (e.g. SADP, SAQP). A first grid structure is formed on the substrate, the first grid structure including a plurality of elements in a first periodic arrangement. The first grid structure may be formed, for example, by a self-aligned pitch multiplication process. The first grid structure is then modified at specific locations in accordance with a cut mask, thereby to define the functional device pattern. In an intermediate step, a second grid structure is formed overlying the first grid structure. The second grid structure includes a plurality of elements in a second periodic arrangement. The elements of the second grid structure work in addition to the cut mask to constrain the locations at which the first grid structure is modified. Overlay and CD requirements of the cut mask can be relaxed.

Abstract: An apparatus for electrochemical experimentation with an isolated microstructural region on a surface comprising a metal sample coated with a photoresist, a region of interest, a light source, comprising optoelectronic devices such as spatial light modulators or digital micromirror devices for direct modulation of the light distribution itself and avoiding the use of a mask, wherein the exposed region is created by light from the light source and wherein the metal sample is immersed. A method for isolating microstructural regions or features on a surface for electrochemical experimentation comprising the steps of providing a metal sample, coating the metal sample, selecting a region of interest, creating exposed photoresist with direct modulation of the light distribution itself by optoelectronic devices such as spatial light modulators or digital micromirror devices and without a mask.

Abstract: The objective is to favorably form a clear resist pattern using a resist composition containing a polymer that can inhibit resist pattern collapse when used as a main chain scission-type positive resist. A method of forming a resist pattern includes: a step of forming a resist film using a positive resist composition containing a polymer including a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below, with a proviso that at least one of the monomer unit (A) and the monomer unit (B) includes at least one fluorine atom; an exposure step; and a development step. The development is carried out using a developer having a surface tension of 17 mN/m or less.

Abstract: Provided is a material composition and method for substrate modification. A substrate is patterned to include a plurality of features. The plurality of features includes a first subset of features having one or more substantially inert surfaces. In various embodiments, a priming material is deposited over the substrate, over the plurality of features, and over the one or more substantially inert surfaces. By way of example, the deposited priming material bonds at least to the one or more substantially inert surfaces. Additionally, the deposited priming material provides a modified substrate surface. After depositing the priming material, a layer is spin-coated over the modified substrate surface, where the spin-coated layer is substantially planar.

Abstract: A method of manufacturing an integrated circuit (IC) device includes exposing a partial region of a photoresist film formed on a main surface of a substrate to generate acid, and diffusing the acid in the partial region of the photoresist film. Diffusing the acid may include applying an electric field, in a direction perpendicular to a direction in which the main surface of the substrate extends, to the photoresist film using an electrode facing the substrate through an electric-field transmission layer filling between the photoresist film and the electrode. The electric-field transmission layer may include an ion-containing layer or a conductive polymer layer.

Abstract: A composition for removing photoresist, including an alkyl ammonium fluoride salt in an amount ranging from about 0.5 weight percent to about 10 weight percent, based on a total weight of the composition; an organic sulfonic acid in an amount ranging from about 1 weight percent to about 20 weight percent, based on the total weight of the composition; and a lactone-based solvent in an amount ranging from about 70 weight percent to about 98.5 weight percent, based on the total weight of the composition.

Abstract: Provided are a positive tone pattern forming method in which development is carried out using a developer containing an organic solvent with use of a composition containing (A) a resin which has a repeating unit containing a moiety capable of forming a polar interaction and whose polarity is decreased due to release of the polar interaction by the action of an acid or a base, or a composition containing (A?) a resin having a repeating unit containing a polar group and (B) a compound capable of forming a polar interaction with the polar group of the resin (A?); and an electronic device manufacturing method including such a pattern forming method.

Abstract: Self-assembled monolayers (SAMs) were selectively prepared on portions of a substrate surface utilizing compounds comprising a hydrogen-bonding group and polymerizable diacetylene group. The SAMs were photopolymerized using ultraviolet light. The pre-polymerized and polymerized SAMs were more effective barriers against metal deposition in an atomic layer deposition process compared to similar compounds lacking these functional groups.

Abstract: Disclosed are embodiments of a multi-layer stack and photolithography methods and systems that employ such a stack. The disclosed multi-layer stacks include a photoresist layer on an underlayer. The photoresist layer and underlayer are made of different materials, which are selected so that valence and conduction band offsets between the underlayer and photoresist layer create an effective electric field (i.e., so that the stack is “self-biased”). When areas of the photoresist layer are exposed to radiation during photolithography and the radiation passes through photoresist layer and excites electrons in the underlayer, this effective electric field facilitates movement of the radiation-excited electrons from the underlayer into the radiation-exposed areas of the photoresist layer in a direction normal to the interface between the underlayer and the photoresist layer.