Abstract: A method of making microstructures, the method including: providing a first substrate, setting a photoresist layer on a surface of the first substrate; covering a surface of the photoresist layer with a photolithography mask plate, wherein the photolithography mask plate comprises a second substrate and a carbon nanotube composite layer located on a surface of the second substrate; exposing the photoresist layer to form an exposed photoresist layer by irradiating the photoresist layer through the photolithography mask plate with ultraviolet light; developing the exposed photoresist layer to obtain a patterned photoresist microstructures.

Abstract: Techniques include providing selective or differential planarization such that different regions of a substrate can have different amounts of material removed. In general, methods herein use photo-reactive generator compounds to generate solubility-changing agents. A specific pattern of light is projected onto a substrate containing such photo-reactive generator compounds to create different concentrations of solubility-changing agent(s) at specific locations across a substrate. As generated solubility-changing agents are diffused into an underlying layer, these concentration differences then control an amount (height or depth) of material removed from a given film or layer at specific spatial locations on the substrate.

Abstract: The present disclosure concerns a method and system for providing a patterned structure (3p) on an acceptor substrate 4). The method comprises providing a donor substrate (10) arranged between a light source (5) and an acceptor substrate (4). A mask (7) is arranged between the light source (5) and the donor substrate (10). The mask (7) comprises a mask pattern (7p) for patterning light (6). The patterned light (6p) impinging the donor substrate (10) causes the donor material (3) to be released from the donor substrate (10) and transfer to the acceptor substrate (4) to form the patterned structure (3p) thereon. The patterned light (6p) is divided by the mask pattern (7p) into a plurality of separate homogeneously sized beams (6b) simultaneously impinging the donor substrate (10) for causing the donor material (3) to be released from the donor substrate (10) in the form of separate homogeneously sized droplets (3d).

Abstract: A method of forming a pattern of a semiconductor device includes: forming a first mask pattern comprising first mask lines extending in a first direction in a cell region and second mask lines extending in the first direction in a first core region, the first mask pattern covering a second core region; forming, on the first mask pattern, a second mask pattern comprising third mask lines extending in a second direction in the cell region and fourth mask lines extending in the second direction in the second core region, the second mask pattern covering the first core region; and forming a third mask pattern by using the second mask pattern, the third mask pattern comprising island-type masks in the cell region, fifth mask lines extending in the first direction in the first core region, and sixth mask lines extending in the second direction in the second core region.

Abstract: A method for patterning a substrate, comprising: providing a photoresist patterning feature on the substrate, the substrate defining a substrate plane, the photoresist patterning feature having a softening temperature below 200° C. The method may include directing a first ion species into the photoresist patterning feature during a first exposure; and depositing a sidewall layer on the patterning feature after the directing at a deposition temperature, the deposition temperature being 200° C. or greater.

Abstract: A pattern forming method includes, in this order: a step (1) of forming a film on a substrate by using an actinic ray-sensitive or radiation-sensitive resin composition containing at least a resin having a group that is decomposed due to an action of an acid so as to generate a polar group; a step (2) of exposing the film; a step (3) of causing the exposed film to come into contact with a component that performs any one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction with a polar group generated in the exposed film without substantially dissolving the exposed film; and a step (4) of forming a pattern by developing the exposed film by using a developer including an organic solvent and removing an area of the film having a small exposure amount.

Abstract: A mask blank with resist film, includes a substrate having a thin film; and a negative resist film formed on a surface of the thin film, wherein in the resist film, a photoacid generator low-concentration region is formed at a part where the resist film is in contact with the thin film; a concentration of the photoacid generator low-concentration region is lower than that of the other region of the resist film; a thickness of the photoacid generator low-concentration region is 5% to 40% of the thickness of the resist film; and a concentration of the photo acid generator at a part in contact with the thin film in the photoacid generator low-concentration region is a value obtained by decreasing the concentration of the photo acid generator in the other region of the resist film by 10% to 40%.

Abstract: An article is prepared with surface regions having different contact angles. A reactive silane material is attached to a surface having a reactive tail component that is contacted with a first corresponding reactant, followed by imagewise UV exposure to cause imagewise reaction of the reactive tail component and first corresponding reactant, forming reacted regions and latent reaction regions. After rinsing, a second corresponding reactant that is capable of reaction with the reactive moiety is applied. Uniform UV exposure leads to a second reaction product only in the latent reaction regions. After rinsing, first regions comprise exclusively the first reaction product and second regions comprising exclusively the second reaction product. These first and second regions have contact angles that differ by 10-110 degrees. A composition can be applied that is exclusively attracted to either the first regions or the second regions, but not to both the first and second regions.

Abstract: A pattern-forming method comprises forming a prepattern that is insoluble or hardly soluble in an organic solvent. A first composition is applied on at least lateral faces of the prepattern to form a resin layer. Adjacent regions to the prepattern of the resin layer are insolubilized or desolubilized in the organic solvent without being accompanied by an increase in a molecular weight by heating the prepattern and the resin layer. Regions other than the adjacent regions insolubilized or desolubilized of the resin layer are removed with the organic solvent. The first composition comprises a first polymer having a solubility in the organic solvent to be decreased by an action of an acid. At least one selected from the following features (i) and (ii) is satisfied: (i) the first polymer comprises a basic group; and (ii) the first composition further comprises a basic compound.

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Abstract: Provided is a material composition and method for substrate modification. A substrate is patterned to include a plurality of features. The plurality of features includes a first subset of features having one or more substantially inert surfaces. In various embodiments, a priming material is deposited over the substrate, over the plurality of features, and over the one or more substantially inert surfaces. By way of example, the deposited priming material bonds at least to the one or more substantially inert surfaces. Additionally, the deposited priming material provides a modified substrate surface. After depositing the priming material, a layer is spin-coated over the modified substrate surface, where the spin-coated layer is substantially planar.

Abstract: Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a polymer comprising a surface attachment group for forming a bond with a surface of the patterned feature and a solvent, and wherein the pattern treatment composition is free of crosslinkers; (c) removing residual pattern treatment composition from the substrate with a first rinse agent, leaving a coating of the polymer over and bonded to the surface of the patterned feature; and (d) rinsing the polymer-coated patterned feature with a second rinse agent that is different from the first rinse agent, wherein the polymer has a solubility that is greater in the first rinse agent than in the second rinse agent. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

Abstract: A novel method for the manufacturing of fine line circuitry on a transparent substrates is provided, the method comprises the following steps in the given order providing a transparent substrate, depositing a pattern of light-shielding activation layer on at least a portion of the front side of said substrate, placing a photosensitive composition on the front side of the substrate and on the pattern of light-shielding activation layer, photo-curing the photosensitive composition from the back side of the substrate with a source of electromagnetic radiation, removing any uncured remnants of the photosensitive composition; and thereby exposing recessed structures and deposition of at least one metal into the thus formed recessed structures whereby a transparent substrate with fine line circuitry thereon is formed. The method allows for very uniform and fine line circuitry with a line and space dimension of 0.5 to 10 ?m.

Abstract: A method for curing photosensitive polyimide (PSPI) films includes the steps of: depositing a PSPI film on a selected substrate, and curing the film by microwave heating at a selected temperature from about 200 to 340° C. in a selected atmosphere containing an oxygen concentration from about 20 to 200,000 ppm. The process atmosphere may be static or flowing. The addition of oxygen improves the removal of acrylate residue and improves the Tg of the cured film, while the low processing temperature characteristic of the microwave process prevents the oxygen from damaging the polyimide backbone. The method may further include the steps of photopatterning and developing the PSPI film prior to curing. The process is particularly suitable for dielectric films on silicon for electronic applications.

Abstract: The method for producing a wired circuit board including an insulating layer and a conductive pattern provided on the insulating layer includes the steps of the following: a step (1), in which the insulating layer is provided; a step (2), in which a metal thin film is provided on an inclined face of the insulating layer; a step (3), in which a photoresist is provided on the metal thin film; a step (4), in which a photomask is disposed so that in the photoresist, a portion where the conductive pattern is to be provided is shielded from light, and the photoresist is exposed to light through the photomask; a step (5), in which the portion of the photoresist shielded from light by the photomask is removed to expose the metal thin film corresponding to the portion; and a step (6), in which the conductive pattern is provided on the metal thin film exposed from the photoresist.

Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming a surface modification layer on a substrate, the surface modification layer including a hydrophilic top surface; coating a photoresist layer on the surface modification layer; and developing the photoresist layer, thereby forming a patterned photoresist layer.

Abstract: Methods of forming edge etch protection using dual layers of positive-negative tone resists. According to a method, a wafer substrate is provided. A first type resist is deposited on a surface of the wafer substrate. The first type resist is patterned and a resist ring is created around a peripheral edge of the wafer substrate. The resist ring is cured. A second type resist is deposited on the surface of the wafer substrate and the resist ring. The second type resist is different from the first type resist.

Abstract: A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.

Abstract: A substrate having a target material layer is provided. A first hard mask layer, a second hard mask layer, and a photoresist layer are formed on the target material layer. The photoresist layer is transferred into first patterns on the second hard mask layer. Regions of the second hard mask layer not protected by the first patterns are etched away, thereby forming second patterns. The first patterns are trimmed to form trimmed features. A conformal spacer material layer is deposited on the trimmed features, the second patterns, and the first hard mask. The spacer material layer is etched to form first spacers on sidewalls of the trimmed features, and second spacers on sidewalls of the second patterns. The trimmed features are removed. Regions of the second patterns not protected by the first spacers are removed, thereby forming patterns with a reduced, fine pitch.

Abstract: Patterning methods for creating features with sub-resolution dimensions that are self-aligned in photoresist materials. Techniques include selectably creating antispacers (or spacers) in soft materials, such as photoresist. A photoresist without a photo acid generator is deposited on a relief pattern of a solubility-neutralized photoresist material having a photo acid generator. A photomask then defines where photo acid is generated from a corresponding activating exposure. Photo acid is then diffused into the photoresist, that is free of the photo acid generator, to cause a solubility shift for subsequent development. These selectably-created antispacers can be line segments having widths defined by acid diffusion lengths, which can be widths of 1 nanometer to tens of nanometers. Moreover, the creation of antispacers, their location, and length, can be controlled using a photomask.