Abstract: Technologies relating to using a slew rate controller to reduce disturbance in a crossbar array circuit are disclosed. An example crossbar array circuit includes: one or more bit lines; one or more word lines; one or more 1T1R cells connected between the bit lines and the word lines; one or more ADCs connected to the one or more bit lines; one or more DACs connected to the one or more word lines; one or more access controls connected to the one or more 1T1R cells and configured to select a 1T1R cell in the one or more 1T1R cells and to program the selected 1T1R cell; and a slew rate controller connected to the DACs, wherein the slew rate controller is configured to receive an input signal. The slew rate controller may be configured to transform a step function input signal into a slew rate input signal.

Abstract: Disclosed are systems and methods for providing programming of multi-level memory cells using an optimized multiphase mapping with a balanced Gray code. A method includes programming, in a first phase, a first portion of data into memory cells in a first-level cell mode. The method may also include reading, from the memory cells, the programmed first portion of the data. The method may also include programming, in a second phase, a second portion of the data into the memory cells in a second-level cell mode, wherein programming the second phase is based on applying, to the read first portion of the data, a mapping from the first-level cell mode to the second-level cell mode. The mapping may be selected based on minimizing an average voltage change of the memory cells from the first to second phase while maintaining a balanced Gray code.

Abstract: Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store data stored in the floating body under any one of a plurality of predetermined conditions. A method of operating semiconductor memory to function as volatile memory, while having the ability to retain stored data when power is discontinued to the semiconductor memory is described.

Abstract: A signal processing device and a signal processing method. The signal processing device includes a receiver, a memristor array and a classifier. The receiver is configured to receive a first signal. The memristor array includes a plurality of memristor units, each of the plurality of memristor units includes a memristor, and the memristor array is configured to apply the first signal that has been received to at least one memristor unit of the plurality of memristor units and output a second signal based on a memristor resistance value distribution of the memristor array. The classifier is configured to classify the second signal outputted from the memristor array to obtain a type of the first signal.

Abstract: In some aspects of the present disclosure, a memory device is disclosed. In some aspects, the memory device includes a first voltage regulator to receive a word line voltage provided to a memory array; a resistor network coupled to the first voltage regulator to provide an inhibit voltage to the memory array, wherein the resistor network comprises a plurality of resistors and wherein each of the resistors are coupled in series to an adjacent one of the plurality of resistors; and a switch network comprising a plurality of switches, wherein each of the switches are coupled to a corresponding one of the plurality of resistors and to the memory array via a second voltage regulator.

Abstract: A memory device includes memory cells in rows, word lines respectively coupled to the rows, and a control circuitry coupled to the memory cells via the word lines. The control circuitry is configured to apply a first program voltage to a first word line of the word lines. The first word line is coupled to a first row of the memory cells. The control circuitry is also configured to, after applying the first program voltage to the first word line, apply a second program voltage to a second word line of the word lines. The second word line is coupled to a second row of the memory cells. The control circuitry is also configured to, after applying the second program voltage to the second word line, apply a first pre-charge voltage to the first word line and a second pre-charge voltage to the second word line. The second pre-charge voltage is greater than the first pre-charge voltage.

Abstract: Systems, methods and apparatus to program a memory cell to have a threshold voltage to a level representative of one value among more than two predetermined values. A first voltage pulse is driven across the memory cell to cause a predetermined current to go through the memory cell. The first voltage pulse is sufficient to program the memory cell to a level representative of a first value. To program the memory cell to a level representative of a second value, a second voltage pulse, different from the first voltage pulse, is driven across the memory cell within a time period of residual poling in the memory cell caused by the first voltage pulse.

Abstract: The present disclosure includes apparatuses and methods related to memory module interfaces. A memory module, which may include volatile memory or nonvolatile memory, or both, may be configured to communicate with a host device via one interface and to communicate with another memory module using a different interface. Memory modules may thus be added or removed from a system without impacting a PCB-based bus to the host, and memory modules may communicate with one another without accessing a bus to the host. The host interface may be configured according to one protocol or standard, and other interfaces between memory modules may be configured according to other protocols or standards.

Abstract: As described, an apparatus may include a memory cell corresponding to a memory address and an access line forming at least a portion of the memory cell. The apparatus may include a first decoder associated with a first delivery driver coupled to a first end of the access line and a second decoder associated with a second delivery driver coupled to another end of the access line.

Abstract: Systems and methods are provided for controlling power down of an integrated dual rail memory circuit. The power down system is configured to power down the power rail for input and logic components (VDD) while maintaining power to the power rail for the memory cells (VDDM). The power down system includes two voltage rails, a clock generator, and a power detector for detecting the power on VDD. The power detector generates an isolated power signal when voltage on VDD is below a voltage threshold. The isolated power signal is configured to disable the clock generator and thus reduce dynamic power as the read/write cycle is not triggered during power down.

Abstract: Various implementations described herein are related to a device having memory circuitry with bitlines coupled to an array of bitcells. Also, the device may have first precharge circuitry that precharges the bitlines before a write cycle. Also, the device may have second precharge circuitry that precharges the bitlines after the write cycle.

Abstract: System on a Chip (SoC) integrated circuits are configured to reduce Static Random-Access Memory (SRAM) power leakage. For example, SoCs configured to reduce SRAM power leakage may form part of an artificial reality system including at least one head mounted display. Power switching logic on the SoC includes a first power gating transistor that supplies a first, higher voltage to an SRAM array when the SRAM array is in an active state, and a third power gating transistor that isolates a second power gating transistor from the first, higher voltage when the SRAM array is in the active state. The second power gating transistor further supplies a second, lower voltage to the SRAM array when the SRAM array is in a deep retention state, such that SRAM power leakage is reduced in the deep retention state.

Abstract: Systems and methods are described including a page buffer to reduce a threshold voltage distribution skew of memory cells and improve programming performance. The page buffer includes a first circuit element connected to a first terminal for supplying a first bitline voltage, a second circuit element connected to a second terminal for supplying a second bitline voltage, and a latch configured to control the first and second circuit elements.

Abstract: The invention relates to a method, and an apparatus for accessing to data in response to a power-supply event. The method, performed by a flash controller, includes steps for: reading a plurality of physical pages of data in a current block from a flash module during a sudden power off recovery procedure; determining whether a power-supply event has occurred according to an error correction result corresponding to read physical pages; reconstructing a first flash-to-host mapping (F2H) table to include physical-to-logical mapping (P2L) information from the 0th page to a page before a last valid page in the current block when the power-supply event has occurred; and programming the reconstructed first F2H table into a location of the flash module.

Abstract: Methods, systems, and devices for memory cell sensing using an averaged reference voltage are described. A memory device may generate the averaged reference voltage that is specific to operating conditions or characteristics. The averaged reference voltage thus may track variations in cell use and cell characteristics. The memory device may generate the averaged reference voltage by shorting together reference nodes to determine an average of values associated with the reference nodes. The reference nodes may be associated with a codeword, which may store values corresponding to the reference nodes. The codeword may be balanced or nearly balanced to include equal or nearly equal quantities of different logic values.

Abstract: A memory circuit includes a first driver circuit, a first column of memory cells coupled to the first driver circuit, a first current source, a tracking circuit configured to track a leakage current of the first column of memory cells, and a footer circuit coupled to the first column of memory cells, the first current source and the tracking circuit.

Abstract: According to the one embodiment, a semiconductor circuit includes: an analog-to-digital conversion circuit including a first analog-to-digital converter configured to sample at least one first sampling signal regarding an input signal based on a first clock, and a second analog-to-digital converter configured to sample at least one second sampling signal regarding the input signal based on a second clock shifted from the first clock by a first time; and a first calibration circuit configured to calibrate at least one timing of the first clock and the second clock based on a calculation result of a moving average of the first sampling signal and the second sampling signal.

Abstract: In some examples, memory die may include a selection pad, which may be coupled to a power potential. The selection pad may provide a signal to a selection control circuit, which may control a selection circuit to couple a power pad to one of multiple power rails. In some examples, a power management integrated circuit may include a selection circuit to provide one power potential to a package including a memory die when a selection signal has a logic level and another power potential when the selection signal has another logic level.

Abstract: An integrated circuit (IC) includes a plurality of volatile memory (VM) blocks, and a power gate control circuit configured to control power gating for each VM block of a plurality of VM blocks. The IC includes a power mode controller circuit configured to select a power mode, and in response to selecting a retention mode as the power mode, the power mode controller circuit gates a supply voltage from each block of a selected subset of the plurality of VM blocks and allows a retention voltage to power each VM block of a remaining subset of the plurality of VM blocks outside the selected subset. The IC includes a voltage controller circuit configured to determine a voltage level of the retention voltage based on a minimum retention voltage required for each VM block of the remaining subset.

Abstract: A storage device and a manufacturing method thereof are provided. The storage device includes a first chip and a second chip. The second chip is stacked on the first chip in a third direction. The first chip includes a storage array, and the storage array includes at least one storage block. An occupied area after the first chip and the second chip are stacked can be reduced by constructing a first local bit line decoder block, a second local bit line decoder block, a first word line decoder block, and a second local bit line decoder block in a top view projection area, thereby reducing plane occupied space of the storage device. This is beneficial for minimizing the size of the storage device.