Abstract: Some embodiments relate to a method for manufacturing a memory device. The method includes forming a bottom electrode over a substrate. A heat dispersion layer is formed over the bottom electrode. A dielectric layer is formed over the heat dispersion layer. A top electrode is formed over the dielectric layer. The heat dispersion layer comprises a first dielectric material.

Abstract: A method of manufacturing a display apparatus includes providing a substrate, forming a display unit defining an opening portion in a display region over the substrate, forming a thin film encapsulation layer to seal the display unit, forming a touch electrode over the thin film encapsulation layer, forming a touch insulating film covering the touch electrode such that the thin film encapsulation layer and the touch insulating film are sequentially stacked and formed over the substrate in the opening portion, forming a touch contact hole by removing a portion of the touch insulating film to expose a portion of the touch electrode, and removing a portion of the touch insulating film and a portion of the thin film encapsulation layer formed in the opening portion to expose a portion of the substrate during the forming of the touch contact hole.

Abstract: The present disclosure provides an organic light-emitting display panel, a method of manufacturing the organic light-emitting display panel, and a display apparatus. The organic light-emitting display panel includes: a substrate having an opening passing through the substrate; a pixel array disposed on the substrate and including a plurality of pixels; an isolation part disposed between the plurality of pixels and the opening and surrounding the opening, wherein the isolation part includes: a first layer disposed on the substrate, wherein the first layer includes a first portion and a second portion which are sequentially stacked in a direction away from the substrate, and an orthogonal projection of the first portion on the substrate falls within an orthogonal projection of the second portion on the substrate; and a second layer disposed on a surface of the first layer away from the substrate.

Abstract: A display apparatus includes a substrate including a first display area and a second display area. The second display area includes a transmission area, a plurality of first opposite electrodes and a plurality of second opposite electrodes each corresponding to the first display area, and a plurality of third opposite electrodes and a plurality of fourth opposite electrodes each corresponding to the second display area and surrounding at least a portion of the transmission area. A shape of each of the plurality of first opposite electrodes is the same as that of each of the plurality of third opposite electrodes.

Abstract: Provided are a display panel including: a first component, a second component, and a bending component connecting the first component and the second component; wherein, the first component has a display surface, and the bending component has a via passing through the bending component in a direction perpendicular to the display surface. A display device is also provided.

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

Abstract: A display device includes a substrate including a first surface, and a second surface opposite the first surface, and defining a through portion passing therethrough, a pixel array including a plurality of pixels surrounding the through portion at the first surface, a plurality of scan lines extending along a first direction for providing scan signals to the pixels, and a plurality of data lines extending along a second direction crossing the first direction for providing data signals to the pixels, the plurality of data lines including first and second data lines adjacent the through portion at different layers, and having at least a portion thereof curved along a perimeter of the through portion.

Abstract: A semiconductor device includes a first device fin and a second device fin that are each located in a first region of the semiconductor device. The first region has a first pattern density. A first dummy fin is located in the first region. The first dummy fin is disposed between the first device fin and the second device fin. The first dummy fin has a first height. A third device fin and a fourth device fin are each located in a second region of the semiconductor device. The second region has a second pattern density that is greater the first pattern density. A second dummy fin is located in the second region. The second dummy fin is disposed between the third device fin and the fourth device fin. The second dummy fin has a second height that is greater than the first height.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to diode triggered Silicon controlled rectifiers and methods of manufacture. The structure includes a diode string comprising a first type of diodes and a second type of diode in bulk technology in series with the diode string of the first type of diodes.

Abstract: A light emitting diode (LED) package includes an aluminum nitride (AlN) substrate, a patterned copper layer with polished portions formed on a first side of the substrate, at least one LED disposed over the polished portions of the patterned copper layer, covers incorporating one or more phosphors disposed over the LEDs, a silicone fill and dam walls. The silicone fill, which is bordered by silicone dam walls and silicone fill surfaces, is formed in between the LEDs and covers. In some embodiments, the silicone fill does not extend over the covers. The silicone fill surface and the ends of the dam walls are substantially planar with an end of the substrate. The LED package can also include a thermal pad disposed on an opposite side of the substrate. Embodiments also include methods for make the LED package.

Abstract: There is provided a semiconductor device that includes a wiring layer, a plurality of bonding layers arranged on the wiring layer and having conductivity, and a semiconductor element having a rear surface facing the wiring layer and a plurality of pads provided on the rear surface, and bonded to the wiring layer via the plurality of bonding layers, wherein the plurality of bonding layers are arranged in a grid shape when viewed along a thickness direction, wherein each of the plurality of pads is electrically connected to a circuit formed inside the semiconductor element and any of the plurality of bonding layers, and wherein at least one of the plurality of pads is located to be spaced apart from the plurality of bonding layers when viewed along the thickness direction.

Abstract: Provided are a display device and a method of repairing the display device, wherein a defective pixel is repaired using a bankless structure that includes a repair pattern.

Abstract: A semiconductor device includes a substrate having a magnetic tunneling junction (MTJ) region and a logic region, an inter-metal dielectric (IMD) layer on the substrate, a MTJ in the IMD layer on the MTJ region, a first metal interconnection in the IMD layer on the logic region, and protrusions adjacent to two sides of the first metal interconnection. Preferably, the MTJ further includes a bottom electrode, a fixed layer, a barrier layer, a free layer, and a top electrode.

Abstract: Provided is a light emitting device, including a first light emitting element having a light emission peak wavelength within a range of 400 nm or more and 490 nm or less, a second light emitting element having a different light emission peak wavelength from the first light emitting element within a range of 400 nm or more and 490 nm or less, a first fluorescent material that is excited by at least one of the first light emitting element and the second light emitting element and emits light having a light emission peak wavelength within a range of 500 nm or more and 540 nm or less, and a second fluorescent material, wherein the first fluorescent material is a Ce-activated aluminate fluorescent material containing Lu, Al, and Ga, and optionally at least one element selected from rare earth elements other than Lu.

Abstract: A semiconductor device structure is provided. The structure includes a semiconductor substrate and a data storage element over the semiconductor substrate. The structure also includes an ion diffusion barrier element over the data storage element and a protective element extending along a sidewall of the ion diffusion barrier element. A bottom surface of the protective element is between a top surface of the data storage element and a bottom surface of the data storage element. The structure further includes a first electrode electrically connected to the data storage element and a second electrode electrically connected to the data storage element.

Abstract: Flexible display devices, such as flexible cover lens films, are discussed and provided herein. The flexible cover lens film has good strength, elasticity, optical transmission, wear resistance, and thermostability. The cover lens film includes a hard coat layer with a thickness from about 5 ?m to 40 ?m, an impact absorption layer with a thickness from about 20 ?m to 110 ?m, and a substrate layer with a thickness from about 10 ?m to 175 ?m and is disposed between the hard coat layer and the impact absorption layer. By combining the hard coat layer and the impact resistant layer, the cover lens film is both flexible and strong with hardness from 6H to 9H.

Abstract: A display device includes a substrate including a display area to display an image and a non-display area provided on at least one side of the display area, a plurality of pixels disposed on the substrate and provided in an area corresponding to the display area, a first insulating layer having an opening in a first area of the non-display area, a second insulating layer provided in the first area, first lines provided on the substrate and connected to the plurality of pixels, and second lines provided on the first and second insulating layers, and connected to the first lines. An area in which the first lines overlap with the second lines is spaced apart from an edge of the second insulating layer when viewed in a plan view.

Abstract: A display device includes a substrate including a display area and a non-display area, a first wiring at the non-display area of the substrate, a second wiring on a layer that is different from the first wiring at the non-display area of the substrate, an inorganic insulating layer on the first wiring and the second wiring, a pad on the inorganic insulating layer, and connected to a first end of the first wiring, a contact bridge on the inorganic insulating layer, and connecting the second wiring to a second end of the first wiring, an electrostatic electrode on the inorganic insulating layer between the pad and the contact bridge, a first organic insulating layer covering the contact bridge and the electrostatic electrode, and exposing the pad, a first upper wiring on the first organic insulating layer, and overlapping the contact bridge and the electrostatic electrode, and a second organic insulating layer on the first upper wiring.

Abstract: A display device includes a first active pattern disposed on a substrate, a first gate electrode disposed on the first active pattern, a second active pattern disposed on the first gate electrode, being electrically connected to the first gate electrode, and including an extension part extending in a first direction and a protrusion part protruding from the extension part in a second direction crossing the first direction, and a voltage line disposed on the second active pattern, extending in the first direction, and overlapping the protrusion part in an overlapping region. The voltage line contacts the protrusion part through a first contact, and the first contact entirely overlaps the overlapping region on a plane.

Abstract: A display device comprises: a base layer, islands and bridges, the islands and the bridges disposed on the base layer, the bridges connecting the islands to each other, first wirings disposed on the bridges, pixels disposed on the islands, the first wirings disposed on the bridges, pixels disposed on the islands, the first wirings being connected to the pixels; an inorganic insulating layer disposed on the base layer, the inorganic insulating layer includes an opening exposing the base layer of a bridge region having the bridges; second wirings disposed in the opening; and a first organic insulating layer disposed between the first wirings and the second wirings, where the first wirings and the second wirings are connected to each other through first contact holes formed in the first organic insulating layer.