Abstract: Apparatus and associated methods relate to a power supply noise disturbance rejection circuit (NDRC) having a first circuit reference potential (CRP1), a second circuit reference potential (CRP2), and a galvanic link conductively connecting CRP1 and CRP2 and providing a non-zero resistance return path for at least one current mode signal (CMS). In an illustrative example, a power supply monitor circuit (PSMC) may be referenced to CRP1 and a control circuit to CRP2. The PMSC may, for example, generate a voltage mode signal (VMS) relative to CRP1 and representing an output parameter of a power supply circuit (PSC), and convert the VMS into a first CMS (CMS1). The control circuit may, for example, generate a control signal for the PSC from CMS1. Various embodiments may advantageously attenuate a noise margin of a CMS presented at the control circuit by a factor of at least 10 relative to an equivalent VMS.

Abstract: One or more systems, devices and/or methods of use provided herein relate to a baseband filter that can be used in a current-mode end-to-end signal path. The current-mode end-to-end signal path can include a digital to analog converter (DAC) operating in current-mode and an upconverting mixer, operating in current-mode and operatively coupled to the DAC. In one or more embodiments, a device used in the signal path can comprise a baseband filter that receives an input current and outputs an output current. The baseband filter can comprise a feedback loop component having an active circuit branch and a passive circuit branch coupled in a loop. A mirroring device can be coupled to the feedback loop component and can provide an output of the device. Selectively activating the mirroring device can vary gain, such as of the mirroring device.

Abstract: A voltage level shifter cell, which is configured to convert voltage levels of input signals of multi-bits, includes: a first circuit area including a first voltage level shifter configured to convert a 1-bit first input signal from among the input signals; and a second circuit area including a second voltage level shifter configured to convert a 1-bit second input signal from among the input signals, wherein the first circuit area and the second circuit area share a first N-well to which a first power voltage is applied, and the first circuit area and the second circuit area share a second N-well to which a second power voltage is applied, wherein the first N-well is formed to extend in a first direction, and the first N-well and the second N-well are arranged to overlap in a second direction crossing the first direction.

Abstract: Disclosed is a radio frequency switch and its radio frequency communication system. The RF switch comprises: N switch transistors Q1˜QN connected in series, wherein a first conducting terminal of Q1 serves as an output end, a second conducting terminal of QN serves as an input end a switch transistor located closer to the output end has a higher or equal withstand voltage than that of a switch transistor located closer to the input end, or a switch transistor located closer to the output end has a lower or equal withstand voltage than that of a switch transistor located closer to the input end, and Q1 and QN has different withstand voltages. The withstand voltages of the switch transistors match the voltage division situation of the switch transistors affected by parasitic effect in the RF switch, thus the voltage withstand capability is basically not affected by parasitic effect.

Abstract: A random bit generator includes a voltage source, a bit data cell, and a sensing control circuit. The voltage source provides a scan voltage during enroll operations. The data cell includes a first transistor and a second transistor. The first transistor has a first terminal coupled to a first bit line, a second terminal coupled to the voltage source, and a control terminal. The second transistor has a first terminal coupled to a second bit line, a second terminal coupled to the voltage source, and a control terminal. The sensing control circuit is coupled to the first bit line and the second bit line, and outputs a random bit data according to currents generated through the first transistor and the second transistor during an enroll operation of the bit data cell.

Abstract: A memory system includes a connector through which power for the memory system is to be supplied from an external device, a controller, a nonvolatile memory device, a power source circuit connected to the controller and the nonvolatile memory device by power lines through which power is supplied to the controller and the nonvolatile memory device, and a power source control circuit that receives a supply of power from the external device through the connector and supplies the power to the power control circuit. The power source control circuit is configured to detect using a divided voltage of a voltage of the power supplied thereto, that the voltage of the power supplied thereto is higher than a predetermined voltage and interrupt the power supplied to the power control circuit if the voltage of the power supplied thereto is higher than the predetermined voltage.

Abstract: Disclosed is a low-power negative voltage generator for RF switches, which is provided with a monostable trigger and a voltage-controlled oscillator before a non-overlapping clock circuit and a charge pump. The monostable trigger can change from a stable state to a transient state when a switch channel selection signal jumps; the clock frequency of the voltage controlled oscillator will be increased during the transient state of the monostable trigger, and after the monostable trigger returns to a stable state, its clock frequency will be reduced to the initial state, thereby ensuring that the circuit power consumption is reduced while the transient characteristic is high.

Abstract: A regeneration circuit includes a first inverting circuit and a second inverting circuit. The regeneration circuit also includes a first transistor coupled to an input of the second inverting circuit, and a second transistor coupled to an input of the first inverting circuit, a third transistor and a fourth transistor. A gate of the first transistor and a gate of the fourth transistor are coupled to a first input, and a gate of the second transistor and a gate of the fourth transistor are coupled to a second input. The regeneration circuit further includes a first switch and a second switch. The first switch and the third transistor are coupled in series between a first rail and the first transistor, and the second switch and the fourth transistor are coupled in series between the first rail and the second transistor.

Abstract: The present disclosure provides multi-channel receiver and multi-channel reception method.

Abstract: Embodiments of the present disclosure provide a level shifter, including: first and second NMOS transistors, wherein the sources of the first and second NMOS transistors are coupled to a first voltage, the gate of the first NMOS transistor is connected to an inverse of an input signal that varies between a second voltage and a third voltage, and wherein the gate of the second NMOS transistor receives a buffer of the input signal. a breakdown protection circuit has third and fourth NMOS transistors, the gates of the third and fourth NMOS transistors being connected to the third voltage, the drain of the first NMOS transistor being connected to the source of the third NMOS transistor, and the drain of the second NMOS transistor being connected to the source of the fourth NMOS transistor. A pull-up circuit is connected to the drains of the third and fourth NMOS transistors.

Abstract: A level shifter includes an input circuit having first and second input terminals configured to receive complementary input signals at a first voltage level and a second voltage level. A cross-latch circuit is coupled to the input circuit, and has first and second output terminals configured to provide complementary output signals at a third voltage level and a fourth voltage level. The input circuit includes first and second control nodes configured to output first and second control signals at the first voltage level and the fourth voltage level based on the input signals. A tracking circuit is coupled to the input circuit and the cross-latch circuit, and is configured to input first and second tracking signals to the cross-latch circuit based on the first and second control signals, wherein the first tracking signal is the greater of the first control signal and the third voltage level, and the second tracking signal is the greater of the second control signal and the third voltage level.

Abstract: An analogue switch arrangement includes an analogue switch including a first and second transistor in parallel between an input terminal and an output terminal and an input transistor arrangement including a first control transistor, a second control transistor, a first voltage control transistor and a second voltage control transistor. The gate terminals of both the first and second transistors are configured to receive a first and second control signal for controlling the analogue switch between an on-state and an off-state. The gate terminals of both the first and second voltage control transistors are configured to receive a voltage based on the voltage at the output terminal to provide for control of the voltage applied at the input terminal based on the voltage at the output terminal when the analogue switch is in the off-state.

Abstract: Provided is a semiconductor device which can operate stably even in the case where a transistor thereof is a depletion transistor. The semiconductor device includes a first transistor for supplying a first potential to a first wiring, a second transistor for supplying a second potential to the first wiring, a third transistor for supplying a third potential at which the first transistor is turned on to a gate of the first transistor and stopping supplying the third potential, a fourth transistor for supplying the second potential to the gate of the first transistor, and a first circuit for generating a second signal obtained by offsetting a first signal. The second signal is input to a gate of the fourth transistor. The potential of a low level of the second signal is lower than the second potential.

Abstract: A latch circuit includes a power supply node, first and second input nodes, and first and second output nodes. A first switching device is coupled between the first and second output nodes and is turned on and off in response to respective first and second states of a clock signal. A first transistor has a source coupled with a common node, a drain coupled with the second output node, and a gate directly coupled with the first input node, and a second transistor has a source coupled with the common node, a drain coupled with the first output node, and a gate directly coupled with the second input node. A second switching device is coupled between the common node and the power supply node and is turned on and off in response to the respective second and first states of the clock signal.

Abstract: A clock circuit includes a latch circuit, a memory state latch circuit, a first inverter, a memory state trigger circuit and a second inverter. The latch circuit is configured to latch an enable signal, and to generate a latch output signal based on a first clock signal and a first output clock signal. The memory state latch circuit is configured to latch a second output clock signal responsive to a third output clock signal. The first inverter is configured to generate the first output clock signal responsive to the third output clock signal. The memory state trigger circuit is configured to generate the second output clock signal responsive to the latch output signal. The second inverter is configured to generate the first clock signal responsive to a second clock signal, and configured to control the latch circuit and the memory state trigger circuit based on the first clock signal.

Abstract: A light source device that includes a first resistor that is connected to a given potential, a light emitting element that is connected in series to the first resistor, a second resistor that is connected to the given potential, and a first current source that is connected in series to the second resistor and that is configured to supply a freely-selected current within a given range are included. A first voltage is taken out from a first connection part where the first resistor and the light emitting element are connected to each other and a second voltage is taken out from a second connection part where the second resistor and the first current source are connected to each other.

Abstract: To provide a hysteresis comparator having a small circuit area and low power consumption. The hysteresis comparator includes a comparator, a switch, a first capacitor, a second capacitor, and a logic circuit. A first terminal of the switch is electrically connected to one of a pair of conductive regions of the first capacitor, one of a pair of conductive regions of the second capacitor, and a first input terminal of the comparator. An output terminal of the comparator is electrically connected to an input terminal of the logic circuit. An output terminal of the logic circuit is electrically connected to the other of the pair of conductive regions of the second capacitor. The logic circuit has a function of generating an inverted signal of a signal input to the input terminal of the logic circuit and outputting the inverted signal to the output terminal of the logic circuit. A reference potential is input to the first input terminal of the comparator and the reference potential is held by the switch.

Abstract: An RF switch circuit is provided. The RF switch circuit may include a first switch disposed between a transmitting port and an antenna port and including a plurality of first transistors; a second switch disposed between the antenna port and a receiving port and including a plurality of second transistors; and a switch control circuit configured to generate control voltages to control the first transistors and the second transistors, generate a first Off voltage to turn off at least one first transistor among the plurality of first transistors and the plurality of second transistors in a transmitting mode, and generate a second Off voltage to turn off at least one second transistor among the plurality of first transistors and the plurality of second transistors in a receiving mode, wherein the second Off voltage may be higher than the first Off voltage.

Abstract: An electronic device includes circuitry configured to output a first output signal shifting to a logic high level at a first time in response to a supply voltage reaching a first voltage level, output a second output signal shifting to a logic high level at a second time occurring after the first time in response to the supply voltage reaches a second level higher than the first level; and the circuitry includes an AND gate circuit configured to output a reset signal based on the first output signal and the second output signal.

Abstract: A frequency multiplier includes an input section having inputs to receive an input signal having an input frequency, a mixer section, and an output section magnetically coupled to the input section and generating an output signal in response to the input signal. The mixer section may be coupled to the input section by a common mode node forming a path for a common mode current to flow to the mixer section and be magnetically coupled to the common mode node. The input section may generate a signal current, and the mixer section may be magnetically coupled to the input section and be directly capacitively coupled to the input section through a capacitor in a signal current path. The mixer section may have differential inputs capacitively coupled to the input section and also be coupled to the input section through a current path. A current helper section may be coupled to the current path.