Abstract: A power semiconductor device is disclosed with layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side. The device can include a drift layer, a first base layer in direct electrical contact to the emitter electrode, a first source region embedded into the first base layer which contacts the emitter electrode and has a higher doping concentration than the drift layer, a first gate electrode in a same plane and lateral to the first base layer, a second base layer in the same plane and lateral to the first base layer, a second gate electrode on top of the emitter side, and a second source region electrically insulated from the second base layer, the second source region and the drift layer by a second insulating layer.

Abstract: An array substrate includes a substrate; an oxide semiconductor layer on the substrate, the oxide semiconductor layer including an active area and source and drain areas at both sides of the active area; a gate insulating layer and a gate electrode sequentially on the active area of the oxide semiconductor layer; an inter insulating layer on the gate electrode and having first and second semiconductor contact holes that expose the source and drain areas respectively; and source and drain electrodes on the inter insulating layer and contacting the source and drain areas through the first and second semiconductor contact holes, respectively, wherein the first and second semiconductor contact holes are disposed in two regions.

Abstract: Embodiments provide a light emitting device package including a package body having a top-opened cavity disposed in at least a portion thereof, a first electrode layer and a second electrode layer electrically isolated from the package body with an insulating layer interposed therebetween, the first electrode layer and the second electrode layer being electrically isolated from each other at a bottom surface of the cavity, a light emitting device placed on the bottom surface of the cavity configured to emit light through the open region of the cavity, and a sensor placed on at least a portion of the package body at the outside of the cavity configured to measure output of the light emitting device.

Abstract: An interdigitated capacitor includes a substrate and a pair of comb-like electrodes both formed on the semiconductor substrate and horizontally arranged thereon, each of the pair of comb-like electrodes including finger electrodes having a curved profile.

Abstract: A transparent LED wafer module and a method for manufacturing the same are provided. In a conductor LED device epitaxial process, the conductor LED device is grown on a transparent material wafer, where both surfaces of the conductor LED device are entirely grown on the transparent material, and then a transparent glass substrate is restacked, thereby securing a high amount of light.

Abstract: A semiconductor device includes a logic circuit and an active element circuit. The logic circuit is provided with semiconductor elements formed in a semiconductor substrate. The active element circuit is provided with transistors formed using semiconductor layers formed over a diffusion insulating film formed above a semiconductor substrate. The active element circuit is controlled by the logic circuit.

Abstract: An organic light emitting diode display and a method of manufacturing the same, the display including a substrate; a plurality of thin film transistors on the substrate; a protective film covering the plurality of thin film transistors; a pixel electrode on the protective film; a pixel defining film on the protective film, the pixel defining film having an opening exposing the pixel electrode; an organic emission layer on the pixel electrode and the pixel defining film; and a common electrode covering the organic emission layer, wherein a cross-section of an opening sidewall of the opening in the pixel defining film has a rounded shape.

Abstract: A nanoscale switching device is provided. The device comprises: a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region having a non-conducting portion comprising an electronically semiconducting or nominally insulating and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field and a source portion that acts as a source or sink for the dopants; and an oxide layer either formed on the first electrode, between the first electrode and the active region or formed on the second electrode, between the second electrode and the active region. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.

Abstract: A display apparatus includes a first substrate having a display area and a non-display area surrounding the display area, an organic film on the first substrate, a first trench in the organic film in the non-display area, the first trench surrounding the display area and including a first sidewall on an inner side of the display apparatus, which includes a sidewall of the organic film, and a second sidewall on an outer side of the display apparatus, which includes a sidewall of the organic film, and a first blocking film containing an inorganic material and covering a surface of the organic film in the non-display area and the sidewall of the organic film included in the first sidewall of the first trench.

Abstract: To provide a miniaturized transistor having high electric characteristics. A conductive film to be a source electrode layer and a drain electrode layer is formed to cover an oxide semiconductor layer and a channel protection layer, and then a region of the conductive film, which overlaps with the oxide semiconductor layer and the channel protection layer, is removed by chemical mechanical polishing treatment. Precise processing can be performed accurately because an etching step using a resist mask is not performed in the step of removing part of the conductive film to be the source electrode layer and the drain electrode layer. With the channel protection layer, damage to the oxide semiconductor layer or a reduction in film thickness due to the chemical mechanical polishing treatment on the conductive film can be suppressed.

Abstract: According to example embodiments, a semiconductor device includes a plurality of active pillars protruding from a substrate. Each active pillar includes a channel region between upper and lower doped regions. A contact gate electrode faces the channel region and is connected to a word line. The word line extends in a first direction. A bit line is connected to the lower doped region and extends in a second direction. The semiconductor device further includes a string body connection portion that connects the channel region of at least two adjacent active pillars of the plurality of active pillars.

Abstract: An SMT LED device includes an LED and a circuit board supporting the LED. A pair of first solder pads are formed on the circuit board and spaced from each other. The LED includes two solder slugs extending downwardly from a bottom the LED. A positioning hole is formed at each first solder pad corresponding a position of a corresponding solder slug. A second solder pad is received in the positioning hole. Each solder slug is received in one corresponding positioning hole and electrically connected to corresponding first and second solder pads by a reflow soldering process. The present disclosure also provides a method for manufacturing the SMT LED device.

Abstract: There is provided a light emitting device package including: a package substrate; a blue light emitting device and a green light emitting device mounted on the package substrate; a flow prevention part formed on the package substrate and substantially enclosing the blue light emitting device; and a wavelength conversion part including a red wavelength conversion material and formed on a region defined by the flow prevention part to cover the blue light emitting device, so that white light having a high degree of color reproducibility may be emitted thereby.

Abstract: Wavelength converters for solid state lighting devices, and associated systems and methods. A system in accordance with a particular embodiment includes a solid state radiative semiconductor structure having a first region and a second region. The first region is positioned to receive radiation at a first wavelength and has a first composition and an associated first bandgap energy. The second region is positioned adjacent to the first region to receive energy from the first region and emit radiation at a second wavelength different than the first wavelength. The second region has a second composition different than the first composition, and an associated second bandgap energy that is less than the first bandgap energy.

Abstract: An organic light emitting display device may include a substrate having a switching device, a first electrode including a reflection structure and being electrically connected to the switching device, a pixel defining layer disposed on the first electrode to define a luminescent region and a nonluminescent region, an organic light emitting structure disposed over the pixel defining layer, and a second electrode disposed over the organic light emitting structure. The first electrode may include the reflection structure such as a recess structure or a protrusion structure, so that the organic light emitting display device may ensure an enhanced light efficiency. Additionally, pixels of the organic light emitting display device may have improved uniformity because an opening of the pixel defining layer may have a rounded shape.

Abstract: The invention relates to an electronic module and to a method for producing same, comprising a mold body (2), a first circuit carrier (3; 13) having a first inner face (3a; 13a), on which electronic components (5) are arranged, and a first outer face (3b; 13b), a second circuit carrier (4; 14) having a second inner face (4a; 14a), on which electronic components (5) are arranged, and a second outer face (4b; 14b), and at least one spring device (6, 7; 16) which connects the inner faces (3a, 14a; 13a, 14a), or surfaces of electronic components (5) arranged thereon, of the first and second circuit carriers (3, 4; 13, 14), wherein the first and second outer faces (3a, 4a; 13a, 14a) are exposed towards the outside of the electronic module in order to emit heat directly to the outside, and wherein the first and second outer faces (3a, 4a; 13a, 14a) are parallel to each other.

Abstract: An organic electro-luminescence device capable of reducing a resistance of a cathode electrode to enhance brightness uniformity at each location within the device is described. The organic electro-luminescence device includes a bank layer formed over a substrate, the bank layer including a first, second, and third portion. A first electrode is formed between the first and second portions of the bank layer. An auxiliary electrode is formed where at least a part of the auxiliary electrode is formed between the second and third portions of the bank layer. A voltage drop prevention pattern is formed on the auxiliary electrode. An organic material layer formed between the first and second portions of the bank layer. A second electrode formed on the organic material layer, where at least a portion of the second electrode is electrically coupled to the auxiliary electrode.

Abstract: A three-dimension circuit structure includes a substrate, a first conductive layer, a filled material and a second conductive layer. The substrate has an upper surface and a cavity located at the upper surface. The first conductive layer covers the inside walls of the cavity and protrudes out the upper surface. The filled material fills the cavity and covers the first conductive layer. The second conductive layer covers the filled material and a portion of the first conductive layer, and the first conductive layer and the second conductive layer encapsulate the filled material. The material of the filled material is different from that of the first conductive layer and the second conductive layer.

Abstract: An organic electro-luminescence device capable of reducing a resistance of a cathode electrode to enhance brightness uniformity at each location within the device is described. The organic electro-luminescence device includes a bank layer formed over a substrate, the bank layer including a first, second, and third portion. A first electrode is formed between the first and second portions of the bank layer. An auxiliary electrode is formed where at least a part of the auxiliary electrode is formed between the second and third portions of the bank layer. A voltage drop prevention pattern is formed on the auxiliary electrode. An organic material layer formed between the first and second portions of the bank layer. A second electrode formed on the organic material layer, where at least a portion of the second electrode is electrically coupled to the auxiliary electrode.

Abstract: A semiconductor memory cell, a semiconductor memory device, and a method for manufacturing the same are disclosed. The semiconductor memory cell may comprise: a substrate; a channel region on the substrate; a gate region above the channel region; a source region and a drain region on the substrate and at opposite sides of the channel region; and a buried layer, which is disposed between the substrate and the channel region and comprises a material having a forbidden band narrower than that of a material for the channel region material. The buried layer material has a forbidden band narrower than that of the channel region material, so that a hole barrier is formed in the buried layer. Due to the barrier, it is difficult for holes stored in the buried layer to leak out, resulting in an improved information holding duration of the memory cell utilizing the floating-body effect.