Abstract: A room-temperature-curable organopolysiloxane composition for an oil seal, wherein an organosilane compound containing a specific organo-oxymethyl group and represented by formula (1) below and/or a partial hydrolysis condensate of said compound is used as a curing agent (crosslinking agent), and an organic compound having a guanidine skeleton is added in combination as a curing catalyst. In the formula, each R1 is independently a C1-12 unsubstituted or substituted monovalent hydrocarbon group, R2 is a C1-12 unsubstituted or substituted monovalent hydrocarbon group, Y is a hydrolyzable group, and n is 0, 1 or 2.

Abstract: A memory device includes a memory cell connected between first and second signal lines, a first wiring connected to the first signal line, a second wiring connected to the second signal line, and a precharging circuit connected to the first wiring. During a write sequence, the precharging circuit charges the first signal line and the first wiring, the memory cell is activated according to a voltage difference between the first signal line and the second signal line, and a write current generated from parasitic capacitances of both the charged first signal line and the charged first wiring flows from the first wiring to the second wiring via the activated memory cell.

Abstract: A memory system according to an embodiment includes a first wiring, a second wiring, a memory cell between the first wiring and the second wiring and a controller. The memory cell includes a variable resistance element and a switching element. The variable resistance element is switchable between a first low-resistance state and a first high-resistance state. The switching element is switchable between a second low-resistance state and a second high-resistance state in accordance with a supplied voltage. The controller is configured to supply the first wiring with a first voltage switching the switching element to the second low-resistance state, supply the first wiring with a second voltage switching the switching element from the second low-resistance state to the second high-resistance state after the first voltage is supplied, and detect a first target voltage of the second wiring after the second voltage is supplied.

Abstract: A storage device includes a first interconnection, a second interconnection, a memory cell connected between the first and second interconnections and including a variable resistance element and a switching element that is connected in series to the variable resistance element, and a control circuit configured to exercise control of a read operation to read data stored in the memory cell. The control circuit exercises control in such a manner as to set the first interconnection which has been charged with a first voltage and the second interconnection which has been charged with a second voltage into floating states, to set the switching element into an on-state by discharging the second interconnection set into the floating state to thereby increase a voltage applied to the memory cell, and to read the data stored in the memory cell in a state in which the switching element is set into the on-state.

Abstract: A memory system according to an embodiment includes a plurality of first wirings, a plurality of second wirings, a memory cell, a third wiring, a sense amplifier, a first switching element, a first transistor including a first terminal connected to a first node and a second terminal connected to a second node, and a control circuit. The first node is positioned further to the side of the sense amplifier than the first switching element. The second node is positioned further to the memory cell than the first switching element. The control circuit is configured to connect the first node and the second node when the first switching element is in an ON state, and connect the first node and the gate terminal of the first transistor when the first switching element is in an OFF state.

Abstract: A memory device includes a first conductor, a first stacked body on the first conductor, a second conductor on the first stacked body, a second stacked body on the second conductor, and a third conductor on the second stacked body. The first stacked body includes a first ferromagnetic layer, a first insulating layer, a second ferromagnetic layer, a non-magnetic first metal layer, and a third ferromagnetic layer stacked in order from a side of the first conductor. The second and third ferromagnetic layers have magnetizations in opposite directions. The second stacked body includes a fourth ferromagnetic layer, a second insulating layer, a fifth ferromagnetic layer, a non-magnetic second metal layer, and a sixth ferromagnetic layer stacked in order from a side of the second conductor. The fifth and sixth ferromagnetic layers have magnetizations in opposite directions. The sixth ferromagnetic layer has a larger volume than the third ferromagnetic layer.

Abstract: A power storage device includes: a plurality of power storage cells; and a case having an inner space in which the plurality of power storage cells are accommodated, and an outer surface that defines the inner space. The outer surface of the case includes a pleated portion that is capable of becoming elongated in response to an increase in pressure of the inner space. The pleated portion is formed on substantially an entire periphery of the case along a peripheral direction of the case.

Abstract: A memory system according to an embodiment includes a first wiring, a second wiring, a memory cell between the first wiring and the second wiring and a controller. The memory cell includes a variable resistance element and a switching element. The variable resistance element is switchable between a first low-resistance state and a first high-resistance state. The switching element is switchable between a second low-resistance state and a second high-resistance state in accordance with a supplied voltage. The controller is configured to supply the first wiring with a first voltage switching the switching element to the second low-resistance state, supply the first wiring with a second voltage switching the switching element from the second low-resistance state to the second high-resistance state after the first voltage is supplied, and detect a first target voltage of the second wiring after the second voltage is supplied.

Abstract: According to one embodiment, a device includes a sense amplifier sensing a first signal based on first data in a cell and a second signal based on second data in the cell. The sense amplifier includes a current mirror causing a first current to flow in a first node connected to the cell and a second current in a second node based on a potential of the first node, a first switch connected to the second node and a third node, a transistor including a terminal connected to the second node and a gate connected to the third node, a second switch connected to the second node and a fourth node, and a circuit connected to the second and third node and causing a third current to flow in the second node based on a potential of the third node.

Abstract: A semiconductor storage device includes a memory cell including a switching element and a variable resistance element, and a circuit for switching the memory cell ON, performing a first read operation on the memory cell, generating a first voltage based on the first read operation, switching the memory cell ON after first data is written to the memory cell, performing a second read operation while the memory cell is maintained to be ON when the first data is stored in the memory cell during the first read operation, performing the second read operation after the memory cell transitions from ON to OFF at least once when second data is stored in the memory cell during the first read operation, generating a second voltage based on the second read operation, and determining the data stored in the memory cell during the first read operation based on the first and second voltages.

Abstract: An indoor camera includes: an image capturing unit; a pan mechanism configured to drive a pan motor to rotate the image capturing unit around a vertical axis; a motor holder housing the pan mechanism and having a contact surface parallel to a horizontal axis on a bottom surface; a suction cup having an internal space and formed of an elastic member, the suction cup having upper and lower openings in upper and lower portions of the internal space, respectively; and a suction cup holder fixed to the suction cup and configured to support a load of a main mechanism portion housing the image capturing unit and the pan mechanism. The lower opening is closed by an installation surface on which the suction cup is installed. The upper opening is configured to seal the internal space by supporting the contact surface by the load of the main mechanism portion.

Abstract: A storage device includes a first interconnection, a second interconnection, a memory cell connected between the first and second interconnections and including a variable resistance element and a switching element that is connected in series to the variable resistance element, and a control circuit configured to exercise control of a read operation to read data stored in the memory cell. The control circuit exercises control in such a manner as to set the first interconnection which has been charged with a first voltage and the second interconnection which has been charged with a second voltage into floating states, to set the switching element into an on-state by discharging the second interconnection set into the floating state to thereby increase a voltage applied to the memory cell, and to read the data stored in the memory cell in a state in which the switching element is set into the on-state.

Abstract: According to one embodiment, a device includes a sense amplifier sensing a first signal based on first data in a cell and a second signal based on second data in the cell. The sense amplifier includes a current mirror causing a first current to flow in a first node connected to the cell and a second current in a second node based on a potential of the first node, a first switch connected to the second node and a third node, a transistor including a terminal connected to the second node and a gate connected to the third node, a second switch connected to the second node and a fourth node, and a circuit connected to the second and third node and causing a third current to flow in the second node based on a potential of the third node.

Abstract: A fluid separation element including: a wound body in which a separation membrane is wound around a central pipe; and an anti-telescoping plate, in which the anti-telescoping plate has an opening part that penetrates through the anti-telescoping plate, the central pipe is inserted into the opening part, a depression is formed in at least one of a surface, in the opening part, of the anti-telescoping plate and an outer surface of a portion, inserted into the opening part, of the central pipe, and a gap between the opening part and the central pipe and the depression are filled with a resin.

Abstract: This fluid separating element comprises: a spiral wound body formed by winding a separating membrane and a raw water flow passage material in a spiral shape; an outside shell provided on an outer periphery of the spiral wound body; and telescoping prevention plates provided at both ends of the spiral wound body and the outside shell, wherein the telescoping prevention plate comprises at least a second annular portion capable of holding the outside shell, and a third annular portion which is formed on an axially outer side of the second annular portion and comprises an annulus having a greater outer diameter than that of the second annular portion, and at least one depression is provided in a side surface on the spiral wound body side of the third annular portion.

Abstract: According to one embodiment, a semiconductor memory device comprising: a first memory layer including a plurality of memory units electrically coupled to one another; a first memory area including a first memory unit for data writing of the memory units; a second memory area including a second memory unit for data reading of the memory units; and a controller configured to write data in the first memory unit, shift the data written in the first memory unit to the second memory unit, and read data written in the second memory unit.

Abstract: An indoor camera includes: an image capturing unit; a pan mechanism configured to drive a pan motor to rotate the image capturing unit around a vertical axis; a motor holder housing the pan mechanism and having a contact surface parallel to a horizontal axis on a bottom surface; a suction cup having an internal space and formed of an elastic member, the suction cup having upper and lower openings in upper and lower portions of the internal space, respectively; and a suction cup holder fixed to the suction cup and configured to support a load of a main mechanism portion housing the image capturing unit and the pan mechanism. The lower opening is closed by an installation surface on which the suction cup is installed. The upper opening is configured to seal the internal space by supporting the contact surface by the load of the main mechanism portion.

Abstract: A semiconductor storage device includes a memory cell including a switching element and a variable resistance element, and a circuit for switching the memory cell ON, performing a first read operation on the memory cell, generating a first voltage based on the first read operation, switching the memory cell ON after first data is written to the memory cell, performing a second read operation while the memory cell is maintained to be ON when the first data is stored in the memory cell during the first read operation, performing the second read operation after the memory cell transitions from ON to OFF at least once when second data is stored in the memory cell during the first read operation, generating a second voltage based on the second read operation, and determining the data stored in the memory cell during the first read operation based on the first and second voltages.

Abstract: This fluid separating element comprises: a spiral wound body formed by winding a separating membrane and a raw water flow passage material in a spiral shape; an outside shell provided on an outer periphery of the spiral wound body; and telescoping prevention plates provided at both ends of the spiral wound body and the outside shell, wherein the telescoping prevention plate comprises at least a second annular portion capable of holding the outside shell, and a third annular portion which is formed on an axially outer side of the second annular portion and comprises an annulus having a greater outer diameter than that of the second annular portion, and at least one depression is provided in a side surface on the spiral wound body side of the third annular portion.

Abstract: A semiconductor memory device includes a control circuit configured to charge a first node to a first voltage based on a resistance of a memory cell when first data is stored, write second data after the first node is charged to the first voltage, charge a second node to a second voltage based on a resistance of the memory cell when second data is stored, and determine, based on the first and second voltages, whether the first data is different from the second data. The circuit includes a first element including a first end coupled to the first node, and a second end coupled to a third node between the first and second nodes, a second element including first and second ends coupled to the first node, and a third element including a first end coupled to the second node and a second end coupled to the third node.