Abstract: An infrared image sensor component includes at least one III-V compound layer on the semiconductor substrate, in which the portion of the III-V compound layer(s) uncovered by the patterns is utilized as active pixel region for detecting the incident infrared ray. The infrared image sensor component includes at least one transistor coupled to the active pixel region, and charge generated by the active pixel region is transmitted to the transistor.

Abstract: A method of partitioning a wafer includes defining a scribe line surrounding a set of dies. The method further includes etching a plurality of trenches into the wafer, wherein each trench of the plurality of trenches is located between adjacent dies of the set of dies, and a width of each trench of the plurality of trenches is less than a width of the scribe line. The method further includes thinning the wafer to expose a bottom surface of the plurality of trenches. The method further includes cutting along the scribe line to separate the set of dies from another portion of the wafer.

Abstract: A method of making a metal insulator metal (MIM) capacitor includes forming a copper bulk layer in a base layer, wherein the copper bulk layer includes a hillock extending from a top surface thereof. The method further includes depositing an etch stop layer over the base layer and the copper bulk layer. The method further includes depositing an oxide-based dielectric layer over the etch stop layer. The method further includes forming a capacitor over the oxide-based dielectric layer. The method further includes forming a contact extending through the oxide-based dielectric layer and the etch stop layer to contact the copper bulk layer, wherein the forming of the contact removes the hillock.

Abstract: A broad band diversity antenna system comprises a system of log periodic antennas (LPA) and dipole antennas. Two LPAs form a balanced dipole by feeding the back ends of the LPA. The feed is improved by the addition of a balun to ensure RF balance. Because a dipole only requires narrow bandwidth, a simple balun is constructed from coax cable or a transmission line, thus providing low cost construction.

Abstract: A dual band end fed dipole provides at least two distinct operating frequencies, e.g. 2.45 GHz and 5.5 GHz. Properties of the antenna include low cost to manufacture, e.g. ease of automation; minimal manual labor to manufacture, e.g. reliability; dual band operation; broad bandwidth; good feed line isolation; omnidirectional beam pattern; minimal vertical beam squint; small diameter; and high efficiency. Embodiments of the invention provide a dual band end fed dipole with a low band trap on the feed side that requires minimal manual labor to manufacture because the antenna is formed from a single flat sheet of metal and soldering is replaced with crimping. Minimal dielectric loading is also achieved.

Abstract: A method for manufacturing a semiconductor structure includes at least following steps. A device layer is formed on a first semiconductor substrate. The device layer is separated from the first semiconductor substrate. A dielectric layer is formed on a second semiconductor substrate. The device layer is bonded onto the dielectric layer.

Abstract: One or more techniques or systems for mitigating peeling associated with a pad, such as a pad of a semiconductor, are provided herein. In some embodiments, a pad structure for mitigating peeling comprises a bond region located above a first region. In some embodiments, a first inter-layer dielectric region associated with the first region is formed in an inter-layer region under the pad. Additionally, a first inter-metal dielectric region associated with the first region is formed in an inter-metal region under the inter-layer region. In some embodiments, the first inter-metal region is formed under the first inter-layer region. In this manner, peeling associated with the pad structure is mitigated, at least because the first inter-metal dielectric region comprises dielectric material and the first inter-layer dielectric region comprises dielectric material, thus forming a dielectric-dielectric interface between the first inter-metal dielectric region and the inter-layer dielectric region.

Abstract: A semiconductor device includes a substrate, a logic gate structure, a photosensitive gate structure, a hard mask layer, a first spacer, a first source, a first drain, a second spacer, a second source and a second drain. The logic gate structure and the photosensitive gate structure are disposed on a surface of the substrate. The hard mask layer covers the logic gate structure, the photosensitive gate structure and the surface of the substrate. The first spacer overlies the hard mask layer conformal to a sidewall of the logic gate structure. The first source and drain are respectively disposed in the substrate at two opposite sides of the logic gate structure. The second spacer overlies the hard mask layer conformal to a sidewall of the photosensitive gate structure. The second source and drain are respectively disposed in the substrate at two opposite sides of the photosensitive gate structure.

Abstract: Various embodiments of mechanisms for forming a slotted metal pad over a TSV in substrate are provided. The dielectric structures in the slotted metal pad reduce dishing effect during planarization of the slotted metal pad. As a result, the risk of having metal stringers in upper metal level(s) caused by the dishing effect is greatly reduced.

Abstract: A metal insulator metal (MIM) capacitor includes a base layer and a copper bulk layer in the base layer. The MIM capacitor further includes an etch stop layer over the base layer and the copper bulk layer and an oxide-based dielectric layer over the etch stop layer. The MIM capacitor further includes a capacitor bottom layer over the oxide-based dielectric layer, an insulator layer over the capacitor bottom layer, and a capacitor top layer over the insulator layer.

Abstract: An infrared image sensor component includes at least one III-V compound layer on the semiconductor substrate, in which the portion of the III-V compound layer(s) uncovered by the patterns is utilized as active pixel region for detecting the incident infrared ray. The infrared image sensor component includes at least one transistor coupled to the active pixel region, and charge generated by the active pixel region is transmitted to the transistor.

Abstract: A method for manufacturing a semiconductor structure includes at least following steps. A device layer is formed on a first semiconductor substrate. The device layer is separated from the first semiconductor substrate. A dielectric layer is formed on a second semiconductor substrate. The device layer is bonded onto the dielectric layer.

Abstract: Antenna designs are disclosed that exhibit both high bandwidth and efficiency. A first aspect of the invention concerns the form factor of the antenna; a second aspect of the invention concerns the ease with which the antenna is manufactured; and a third aspect concerns the superior performance exhibits by the antenna across a large bandwidth.

Abstract: A backside illuminated image sensor device structure and methods for forming the same are provided. The method for manufacturing a backside illuminated image sensor device structure includes providing a substrate and forming a polysilicon layer over the substrate. The method further includes forming a buffer layer over the polysilicon layer and forming an etch stop layer over the buffer layer. The method further includes forming a hard mask layer over the etch stop layer and patterning the hard mask layer to form an opening in the hard mask layer. The method further includes performing an implant process through the opening of the hard mask layer to form a doped region in the substrate and removing the hard mask layer by a first removing process. The method further includes removing the etch stop layer by a second removing process and removing the buffer layer by a third removing process.

Abstract: Systems and methods for enabling a WLAN client to communicate simultaneously over more than one band at a time are described, where each client has at least one radio that is operational in each supported band. Load balancing based on traffic requirements optimizes the use of the multiple bands.

Abstract: A method for manufacturing a semiconductor structure includes at least following steps. A device layer is formed on a first semiconductor substrate. The device layer is separated from the first semiconductor substrate. A dielectric layer is formed on a second semiconductor substrate. The device layer is bonded onto the dielectric layer.

Abstract: Various embodiments disclose systems and methods for employing a Sub1G signal (e.g. a signal in the range of approximately 500 Mhz or 800 mHz) for use with internal and/or external components of various user devices. The Sub1G region may provide a path loss advantage over traditional 2.4 and 5 Ghz systems because of the lower frequency in free-space path loss model. Sub 1G may also present less interference compared to 2.4 GHz (e.g., better QoS for applications such as VOIP, Gaming, etc.). In some of the disclosed embodiments, Sub1G may be employed using current 2.4G or 5G Wireless LAN chipset with RF Up/Down Converters. In some embodiments, the Sub1G approach may be used to create a Long Range Bridge, Long Range Extender, Long Range Client, Long Range Hotspot, etc.

Abstract: Various embodiments disclose systems and methods for employing a Sub1G signal (e.g. a signal in the range of approximately 500 Mhz or 800 mHz) for use with internal and/or external components of various user devices. The Sub1G region may provide a path loss advantage over traditional 2.4 and 5 Ghz systems because of the lower frequency in free-space path loss model. Sub1G may also present less interference compared to 2.4 GHz (e.g., better QoS for applications such as VOIP, Gaining, etc.). In some of the disclosed embodiments, Sub1G may be employed using current 2.4G or 5G Wireless LAN chipset with RF Up/Down Converters. In some embodiments, the Sub1G approach may be used to create a Long Range Bridge, Long Range Extender, Long Range Client, Long Range Hotspot, etc.

Abstract: Various embodiments of mechanisms for forming a slotted metal pad over a TSV in substrate are provided. The dielectric structures in the slotted metal pad reduce dishing effect during planarization of the slotted metal pad. As a result, the risk of having metal stringers in upper metal level(s) caused by the dishing effect is greatly reduced.

Abstract: A semiconductor device includes a thermal conductor formed on and thermally connected to the seal ring. The thermal conductor is spatially spaced from the electrically conductive pad. The thermal conductor is exposed of the substrate and can be regarded as an extension of the thermal path of the seal ring, such that the heat from the seal ring is dissipated efficiently.