Abstract: Disclosed is a printing device including: a finger stage which has a nail rest, having an identifier, to place a tip of a nail, the nail being a printing target, and on which a finger corresponding to the nail is placed; and at least one camera which obtains an image from a first direction and an image from a second direction. The identifier which detects a position of the nail is provided on one surface of the nail rest such that the identifier does not exist in the image from the first direction but the identifier exists in the image from the second direction.

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching. In some embodiments, a method comprises flowing acetylene gas into a process chamber to produce a diamond like carbon deposition on a pattern mask or on at least one layer of oxide or nitride on the substrate, flowing a gas mixture of a first gas of a hydrofluorocarbon-based gas and a second gas of a fluorocarbon-based gas into the process chamber, forming a plasma from the gas mixture using an RF power source and at least one RF bias power source, performing an anisotropic etch of the at least one layer of oxide or nitride on the substrate using the pattern mask, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

Abstract: Disclosed is a printing device including: a print head; a finger holder that includes a nail rest on which a nail is placed, and a spring which biases the nail rest in a direction of pushing up the nail rest to locate a printing target surface of the nail placed on the nail rest at a printing position by the print head; and a spacer that presses down the nail rest against a biasing force of the spring.

Abstract: A thermoelectric conversion module includes: a first thermoelectric conversion element group including a first thermoelectric member including a first conductivity-type semiconductor, and a second thermoelectric member including a second conductivity-type semiconductor; a second thermoelectric conversion element group including a third thermoelectric member including the first conductivity-type semiconductor, and a fourth thermoelectric member including the second conductivity-type semiconductor; a first substrate connected to an upper side of the first thermoelectric conversion element group and the second thermoelectric conversion element group; and a second substrate connected to a lower side of the first thermoelectric conversion element group and the second thermoelectric conversion element group. The first thermoelectric member and the second thermoelectric member are electrically connected by a first current path.

Abstract: A thermoelectric conversion module includes: a thermoelectric element group including an array of first semiconductor elements and second semiconductor elements; a first substrate joined to an upper side of the thermoelectric element group; a second substrate joined to a lower side of the thermoelectric element group; and an extended portion that extends out from an end of at least one of the first substrate or the second substrate. The extended portion includes a first region and a second region, and a first width of the first region is wider than a second width of the second region, the first region being close to the first substrate or the second substrate, the second region being farther from the first substrate or the second substrate than the first region, the first width and the second width each being a width in a direction perpendicular to a longitudinal direction of the extended portion.

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

Abstract: A dispersion wherein dispersoid particles including colloidal silica and zinc cyanurate are dispersed in a liquid medium. The colloidal silica particles may have an average diameter of 5 to 500 nm, and the dispersion may contain 0.1 to 40% by mass of the particles in terms of SiO2 concentration. Primary particles of the zinc cyanurate may have a major axis length of 50 to 1000 nm, a minor axis length of 10 to 300 nm, and a ratio of major to minor axis length of 2 to 25, and the dispersion may contain 0.1 to 50% by mass of the particles in terms of solids content. A mass ratio of the colloidal silica to the zinc cyanurate particles may be 1:0.01 to 100, and total solids content may be 0.1 to 50% by mass. The liquid medium may be water or an organic solvent.

Abstract: A substrate processing method includes a substrate holding step of holding a substrate in which a pattern is defined on one major surface, a charge supply step of supplying a charge of one polarity to the substrate, a first voltage application step of applying, in parallel with the charge supply step, a voltage of the other polarity to a first electrode arranged on the other major surface of the substrate through a dielectric member, a second voltage application step of applying, after the first voltage application step, a voltage of the one polarity to the first electrode while keeping a state where a ground connection of the substrate is released and a drying step of removing, in parallel with the second voltage application step, a liquid from the one major surface of the substrate so as to dry the substrate.

Abstract: Methods for RF pulse reflection reduction are provided herein. In some embodiments, a method for processing a substrate in a plasma enhanced substrate processing system using multi-level pulsed RF power includes; receiving a process recipe for processing the substrate that includes a plurality of pulsed RF power waveforms from a plurality of RF generators, using the master RF generator to generate a transistor-transistor logic (TTL) signal having a base frequency and a first duty cycle, setting a multiplier for each RF generator, dividing the first duty cycle into a high level interval and a low level interval, determining a frequency command set for each RF generator and sending the frequency command set to each RF generator, wherein the frequency command set includes a frequency set point for each RF generator; and providing the plurality of pulsed RF power waveforms from the plurality of RF generators to a process chamber.

Abstract: A drawing device, including: a drawing head which performs drawing on a drawing target; a head mover which moves the drawing head in a first direction and in a second direction which intersects with the first direction; a cap which protects the drawing head; and a processor which controls the drawing head and the head mover. Within a range where the drawing head is moved by the head mover, a drawing area where the drawing target is placed and the drawing by the drawing head is performed and a stand-by area where the cap is disposed are provided. The drawing head performs the drawing on the drawing target while the processor controls the head mover to move the drawing head in the first direction. The drawing head is protected with the cap by the processor controlling the head mover to move the drawing head to the stand-by area.

Abstract: Methods and apparatus for controlling fluid distribution to multiple fluid delivery zones in an etch chamber is provided herein. In some embodiments, the apparatus includes a first flow ratio controller and a second flow ratio controller, each having a respective inlet, a first outlet coupled to a first fluid delivery zone in a process chamber, and a second outlet coupled to a second fluid delivery zone in the process chamber, wherein the first flow ratio controller and the second flow ratio controller are configured to provide a flow ratio of a first process fluid and a second process fluid, respectively, between the first outlet and the second outlet, and a third flow ratio controller configured to provide a flow rate of a third process fluid to at least one of the first fluid delivery zone, the second fluid delivery zone, or a third fluid delivery zone.

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

Abstract: A waste ink case includes a container. The container houses an ink absorber that absorbs ink. The container includes an ink introducing port, an exhaust vent, and a partition wall. Through the ink introducing port, the ink is introduced from a print head into the container. Through the exhaust vent, air in the container is exhausted. The partition wall acts as an obstruction between the ink introducing port and the exhaust vent. The ink absorber is provided along a ventilation passage. The ventilation passage is from the ink introducing port to the exhaust vent, detouring around the partition wall.

Abstract: A drawing device, including: a drawing head which performs drawing on a drawing target; a head moving unit which moves the drawing head in a first direction and in a second direction which intersects with the first direction; a processor which controls the drawing head and the head moving unit; and a plurality of maintenance units in which the drawing head performs maintenance with contents different from each other, wherein within a range where the drawing head is moved by the head moving unit, a drawing area, a stand-by area and the plurality of maintenance units are provided at positions different from each other, and the processor controls the head moving unit to control whether the maintenance is performed or not in at least one of the plurality of maintenance units when the drawing head moves between the stand-by area and the drawing area.

Abstract: A coating-forming composition for an electrical steel sheet that maintains excellent insulating properties, corrosion resistance, adhesion, and the like required in a coating for an electrical steel sheet, and exhibits excellent viscosity stability, with an increase in viscosity over time being kept gradual. A coating-forming composition for an electrical steel sheet comprises colloidal silica, a phosphate, phenylphosphonic acid or a salt thereof, and an aqueous medium.

Abstract: Multilayered stacks having layers of silicon interleaved with layers of a dielectric, such as silicon dioxide, are plasma etched with non-corrosive process gas chemistries. Etching plasmas of fluorine source gases, such as SF6 and/or NF3 typically only suitable for dielectric layers, are energized by pulsed RF to achieve high aspect ratio etching of silicon/silicon dioxide bi-layers stacks without the addition of corrosive gases, such as HBr or Cl2. In embodiments, a mask open etch and the multi-layered stack etch are performed in a same plasma processing chamber enabling a single chamber, single recipe solution for patterning such multi-layered stacks. In embodiments, 3D NAND memory cells are fabricated with memory plug and/or word line separation etches employing a fluorine-based, pulsed-RF plasma etch.

Abstract: A drawing device, including: a drawing head which performs drawing on a drawing target; a head mover which moves the drawing head in a first direction and in a second direction which intersects with the first direction; a cap which protects the drawing head; and a processor which controls the drawing head and the head mover. Within a range where the drawing head is moved by the head mover, a drawing area where the drawing target is placed and the drawing by the drawing head is performed and a stand-by area where the cap is disposed are provided. The drawing head performs the drawing on the drawing target while the processor controls the head mover to move the drawing head in the first direction. The drawing head is protected with the cap by the processor controlling the head mover to move the drawing head to the stand-by area.

Abstract: Provided are an AP node to which a plurality of sensors is connected; and a DB node connected to the AP node. The AP node includes: a receiving unit configured to receive measurement data including values of a plurality of measurement items output from each of the sensors; a queue that stores a most recent value in units of measurement items of each of the sensors; a determination unit configured to refer to the queue and then determine whether the value of each of the measurement items has changed, every time the measurement data is output from each of the sensors; a transmission unit configured to, in a case where there is a measurement item having a value change, generate storage data including the value of the measurement item for each of the measurement items and transmit the generated data to the DB node; and an overwriting unit configured to overwrite the most recent value in the queue with a newest value of the measurement item.