Abstract: An article having alternating oxide layers and nitride layers is etched by an etch process. The etch process includes providing a first gas comprising C4F6H2 in a chamber of an etch reactor, ionizing the C4F6H2 containing gas to produce a plasma comprising a plurality of ions, and etching the article using the plurality of ions.

Abstract: Embodiments of the present invention provide methods for etching a material layer using synchronized RF pulses. In one embodiment, a method includes providing a gas mixture into a processing chamber, applying a first RF source power at a first time point to the processing chamber to form a plasma in the gas mixture, applying a first RF bias power at a second time point to the processing chamber to perform an etching process on the substrate, turning off the first RF bias power at a third time point while continuously maintaining the first RF source power on from the first time point through the second and the third time points, and turning off the first RF source power at a fourth time point while continuously providing the gas mixture to the processing chamber from the first time point through the second, third and fourth time points.

Abstract: A crosslinked composition is obtained by crosslinking a composition, containing: 1 to 99 parts by mass of a vinyl aromatic copolymer rubber (I) comprising 5 to 70% by mass of a vinyl aromatic monomer unit and 0.1 to 30% by mass of a conjugated diene monomer unit and having one or more tan ? peak temperatures between 75° C. and 125° C.; 99 to 1 parts by mass of an ethylenic copolymer rubber (II); 10 to 100 parts by mass of an olefinic resin (III) based on 100 parts by mass of a total amount of the vinyl aromatic copolymer rubber (I) and the ethylenic copolymer rubber (II); and 0.01 to 50 parts by mass of a crosslinking agent (IV) based on 100 parts by mass of the total amount of the vinyl aromatic copolymer rubber (I) and the ethylenic copolymer rubber (II).

Abstract: The disclosure concerns a plasma-enhanced etch process in which chamber pressure and/or RF power level is ramped throughout the etch process.

Abstract: The present invention provides a piezoelectric sensor that can reduce spurious vibration of a transducer. The piezoelectric sensor includes a transducer which has a piezoelectric body and a vibration plate and which transmits/receives ultrasound, and a mount supporting the transducer near nodes of mechanical vibration generated to the transducer. The mount includes ribs that contact the transducer near the nodes of vibration in a point by point, line by line or partially plane by plane contact manner to support the transducer, and retract portions which are provided side by side to respective ribs near the nodes of vibration and which are distant from the transducer so as not to support the transducer.

Abstract: A projector includes a cooling unit that is disposed so as to face an inner side of a housing and that includes a cooling plane that cools to a temperature lower than the housing, a light emitting element that is disposed in the housing, that emits a light beam, that enables an adjustment of a position and a tilt of an optical axis, and that comprises an outer plane where an angle relative to the cooling plane of the cooling unit is fixed even when displaced by the adjustment, and a heat transfer member that is in surface contact with and thermally connected to the cooling plane of the cooling unit and the outer plane of the light emitting element.

Abstract: This invention provides a viscosity modifier for high concentration dispersion of inorganic fine particles which can reduce, by giving excellent viscosity modifying function to a high concentration dispersion of inorganic fine particles (e.g., printing ink composition, functional paste composition or paint composition, of high concentration dispersion of inorganic fine particles), the occurrence of inconvenience in a printing step or coating step for the manufacture of components or substrates, and also provides a high concentration dispersion of inorganic fine particles which contains said viscosity modifier.

Abstract: Boron-doped carbon-based hardmask etch processing is described. In an example, a method of patterning a film includes etching a boron-doped amorphous carbon layer with a plasma based on a combination of CH4/N2/O2 and a flourine-rich source such as, but not limited to, CF4, SF6 or C2F6.

Abstract: Multilayered stacks having layers of silicon interleaved with layers of a dielectric, such as silicon dioxide, are plasma etched with non-corrosive process gas chemistries. Etching plasmas of fluorine source gases, such as SF6 and/or NF3 typically only suitable for dielectric layers, are energized by pulsed RF to achieve high aspect ratio etching of silicon/silicon dioxide bi-layers stacks without the addition of corrosive gases, such as HBr or Cl2. In embodiments, a mask open etch and the multi-layered stack etch are performed in a same plasma processing chamber enabling a single chamber, single recipe solution for patterning such multi-layered stacks. In embodiments, 3D NAND memory cells are fabricated with memory plug and/or word line separation etches employing a fluorine-based, pulsed-RF plasma etch.

Abstract: A radiation-sensitive composition includes a low-molecular-weight compound, a solvent and a radiation-sensitive acid-generator other than the low-molecular-weight compound. The low-molecular-weight compound has one or more acid-dissociable groups which decompose by an action of an acid to enhance solubility in an alkaline developing solution and one or more radiation-sensitive acid-generating groups which generate an acid upon application of an active ray or radiation per molecule. The low-molecular-weight compound has a polystyrene-reduced number-average molecular weight (Mn) measured by gel permeation chromatography (GPC) of 500 to 4,000. The low-molecular-weight compound is not obtained from chain growth polymerization of a monomer with an unsaturated bond. A content of the low-molecular-weight compound is 80 mass % or more of 100 mass % of a total solid component of the radiation-sensitive composition. The low-molecular-weight compound is a compound shown by a following formula (1).

Abstract: The disclosure provides a hydrogenated straight-chain block copolymer, obtained by selective hydrogenation of a straight-chain block copolymer.

Abstract: An image display device includes a holder and an optical component. The holder has an optical path. The optical component is mounted to the holder such that the optical component is disposed in the optical path of the holder. The holder has a first portion with a first edge part and a second portion with a second edge part. The holder is integrally formed as a one-piece, unitary member. The first and second portions are axially and adjacently arranged relative to each other along an optical axis of the optical path of the holder. The first and second edge parts at least partially define a circumferential edge of an aperture that is arranged with respect to the optical component in the optical path of the holder.

Abstract: One or more openings in an organic mask layer deposited on a first insulating layer over a substrate are formed. One or more openings in the first insulating layer are formed through the openings in the organic mask using a first iodine containing gas. An antireflective layer can be deposited on the organic mask layer. One or more openings in the antireflective layer are formed down to the organic mask layer using a second iodine containing gas. The first insulating layer can be deposited on a second insulating layer over the substrate. One or more openings in the second insulating layer can be formed using a third iodine containing gas.

Abstract: One or more openings in an organic mask layer deposited on a first insulating layer over a substrate are formed. One or more openings in the first insulating layer are formed through the openings in the organic mask using a first iodine containing gas. An antireflective layer can be deposited on the organic mask layer. One or more openings in the antireflective layer are formed down to the organic mask layer using a second iodine containing gas. The first insulating layer can be deposited on a second insulating layer over the substrate. One or more openings in the second insulating layer can be formed using a third iodine containing gas.

Abstract: A radiation-sensitive resin composition includes a polymer that includes at least one repeating unit (i) selected from a repeating unit shown by a formula (1), (2), and (3); and a repeating unit (ii) shown by a formula (4). R1 represents a hydrogen atom or a methyl group. Each R2 independently represents one of a linear or branched alkyl group having 1 to 12 carbon atoms, a linear or branched alkoxy group having 1 to 12 carbon atoms, and an alicyclic hydrocarbon group having 3 to 25 carbon atoms. p is an integer from 0 to 3, and q is an integer from 1 to 3, and p+q?5. A chemically-amplified positive-tone resist film that is sensitive to extreme ultraviolet rays (EUV) can be formed using the radiation-sensitive resin composition.

Abstract: A pattern forming method includes providing and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate. The under-layer film is irradiated with radiation through a mask to cause an acid to be selectively generated in an exposed area of the under-layer film. An upper-layer film which does not contain a radiation-sensitive acid generator and which contains a composition capable of polymerizing or crosslinking by an action of an acid is provided. A cured film is provided by polymerization or crosslinking selectively in an area of the upper-layer film corresponding to the exposed area of the under-layer film in which the acid has been generated. An area of the upper-layer film corresponding to an area of the under-layer film in which the acid has not been generated is removed.

Abstract: Methods of polymer deposition for forming reduced critical dimensions are described. In one embodiment, a substrate is provided into a chamber, the substrate having a patterned layer disposed on an underlying layer formed thereon. The patterned layer includes a plurality of openings, each opening having a sidewall, a bottom, and a critical dimension. A gas mixture is provided into the chamber, the gas mixture having an etching gas and a polymer control gas. The polymer control gas includes a polymerizing fluorocarbon CxFy gas and a C—H bond containing gas. A plasma is formed with the gas mixture and a conformal polymer layer is deposited in the presence of the plasma on the patterned layer to form a reduced critical dimension in each opening. The reduced critical dimension is smaller than the corresponding critical dimension of the opening.

Abstract: The present invention provides a thermoplastic elastomer composition obtained by dynamically crosslinking, under a melting condition, 100 parts by mass of a block copolymer (I), 1 to 1,000 parts by mass of a polar resin (II), 1 to 500 parts by mass of a modified polymer (III), and 0.01 to 50 parts by mass of a crosslinking agent (IV), wherein the block copolymer (I) comprises at least one polymer block (A) comprising as a main component an alkylene unit, and/or at least one copolymer block (B) comprising as main components an alkylene unit (b-1) and a vinyl aromatic monomer unit (b-2), and comprises at least one unsaturated block (C) comprising as a main component a conjugated diene monomer unit having 5 or more carbon atoms at an end.

Abstract: A compound shown by the following formula (1).

Abstract: One or more openings in an organic mask layer deposited on a first insulating layer over a substrate are formed. One or more openings in the first insulating layer are formed through the openings in the organic mask using a first iodine containing gas. An antireflective layer can be deposited on the organic mask layer. One or more openings in the antireflective layer are formed down to the organic mask layer using a second iodine containing gas. The first insulating layer can be deposited on a second insulating layer over the substrate. One or more openings in the second insulating layer can be formed using a third iodine containing gas.