Abstract: Systems and methods for internal copy-back with read-verify are described. In one embodiment, a storage device includes a controller to select a first single level cell (SLC) page of a plurality of SLC pages on the storage device to transfer to a triple level cell (TLC) page. The controller, in conjunction with an error correcting code (ECC) decoder, read-verifies the first SLC page. Read-verifying the first SLC page includes reading the first SLC page to an internal page buffer, decoding the first SLC page read into the internal page buffer, determining a number of errors contained in the first SLC page based at least in part on the decoding, and verifying whether the number of errors contained in the first SLC page satisfies an error threshold. The controller transfers the first SLC page to the TLC page according to a result of read-verifying the first SLC page.

Abstract: Systems and methods for internal copy-back with read-verify are described. In one embodiment, a storage device includes a controller to select a first single level cell (SLC) page of a plurality of SLC pages on the storage device to transfer to a triple level cell (TLC) page. The controller, in conjunction with an error correcting code (ECC) decoder, read-verifies the first SLC page. Read-verifying the first SLC page includes reading the first SLC page to an internal page buffer, decoding the first SLC page read into the internal page buffer, determining a number of errors contained in the first SLC page based at least in part on the decoding, and verifying whether the number of errors contained in the first SLC page satisfies an error threshold. The controller transfers the first SLC page to the TLC page according to a result of read-verifying the first SLC page.

Abstract: Channel information and channel conditions that are determined by an Offline Tracking process are used to determine whether or not an adjustment to the read reference voltage can be avoided altogether without detrimentally affecting performance, or, alternatively, to determine a precision with which a read reference voltage adjustment should be made. If it is determined based on the channel conditions that a read reference voltage adjustment can be avoided altogether, read performance is improved by reducing the probability that a read reference voltage adjustment needs to be made during normal read operations. If it is determined based on the channel conditions that a read reference voltage adjustment needs to be made with a particular precision, the read reference voltage is adjusted with that precision.

Abstract: Systems and methods relating generally to solid state memory, and more particularly to systems and methods for recovering data from a solid state memory. An example data processing system includes a first circuit operable to yield a modified soft data set from a data set accessed from a solid state memory device, and a second circuit operable to apply a data decoding algorithm to the modified soft data to yield a decoded output.

Abstract: The present inventions are related to systems and methods for storing data, and more particularly to systems and methods for writing data to a storage device.

Abstract: A low-density parity-check decoder utilizes information about hard errors in a storage medium to identify bit locations to flip log-likelihood ratios while attempting to decode codewords. The decoder iteratively flips and saturates log-likelihood ratios for bits at hard error locations and re-decodes until a valid codeword is produced. The decoder also identifies variable nodes associated with trapping sets for iterative log-likelihood ratio bit flipping.

Abstract: An apparatus comprising a memory and a controller. The memory is configured to process a plurality of read/write operations. The memory comprises a plurality of memory modules each having a size less than a total size of the memory. The controller is configured to process a plurality of I/O requests to blocks of the memory that are not marked as bad on a block list. The controller is configured to track a plurality of bad blocks of the memory. The controller is configured to perform a plurality of scans on the memory. The scans are configured to (a) identify the bad blocks, and (b) mark the bad blocks as bad on the block list.

Abstract: An apparatus comprising a memory and a controller. The memory may be configured to process a plurality of read/write operations. The memory comprises a plurality of memory units each having a size less than a total size of the memory. The controller may be configured to perform error correction code decoding on the memory units. The controller may be configured to generate a plurality of original log likelihood ratios each comprising a real value. The controller may be configured to convert each of the original log likelihood ratios to a converted log likelihood ratio comprising a fixed point value. The conversion comprises (a) scaling down a magnitude of each of the original log likelihood ratios, and (b) rounding each of the original log likelihood ratios having a scaled down magnitude to the fixed point value.

Abstract: An apparatus having mapping and interface circuits. The mapping circuit (i) generates a coded item by mapping write unit bits using a modulation or recursion of past-seen bits, and (ii) calculates a particular state to program into a nonvolatile memory cell. The interface circuit programs the cell at the particular state. Two normal cell states are treated as at least four refined states. The particular state is one of the refined states. A mapping to the refined states mitigates programming write misplacement that shifts an analog voltage of the cell from the particular state to an erroneous state. The erroneous state corresponds to a readily observable illegal or atypical write sequence, and results in a modified soft decision from that calculated based on the normal states only. A voltage swing between the particular state and the erroneous state is less than between the normal states.

Abstract: Systems and method relating generally to solid state memory, and more particularly to systems and methods for reducing errors in a solid state memory.

Abstract: Systems and methods relating generally to solid state memory, and more particularly to systems and methods for recovering data from a solid state memory. An example data processing system includes a first circuit operable to yield a modified soft data set from a data set accessed from a solid state memory device, and a second circuit operable to apply a data decoding algorithm to the modified soft data to yield a decoded output.

Abstract: An apparatus includes a memory and a controller. The memory may be configured to store data. The controller may be configured to process a plurality of read/write operations to/from the memory, receive a codeword from the memory, generate a plurality of syndromes of the codeword at a plurality of possible code rates, generate a plurality of count values by counting a number of unsatisfied parity checks in each of the plurality of syndromes, generate a plurality of normalized values by dividing the plurality of count values by a plurality of lengths of the plurality of possible code rates respectively, and determine a bit error rate value of the memory based on a lowest value among the plurality of normalized values.

Abstract: Methods and apparatus are provided for read retry operations with read reference voltages ranked for different page populations of a memory. One method comprises obtaining a plurality of rankings of a plurality of read reference voltages for a plurality of page populations, wherein the rankings are based on a predefined performance metric; and reading a codeword from the memory a plurality of times, wherein each of the read operations uses a different one of the plurality of read reference voltages selected based on the rankings of the plurality of read reference voltages. The performance metric comprises, for example, a bit error rate, a bit polarity disparity, a substantially minimal syndrome weight and/or measures of an average system latency or a tail latency. The ranking is optionally based on a size of the page populations that had each of the ranked read reference voltages. Channel estimation is performed separately for each of the plurality of page populations.

Abstract: An apparatus for reading a non-volatile memory includes a tracking module operable to calculate means and variances of voltage level distributions in a non-volatile memory and to calculate at least one reference voltage to be used when reading the non-volatile memory based on the means and variances, a likelihood generator operable to calculate at least one other reference voltage to be used when reading the non-volatile memory, wherein the at least one other reference voltage is based at least in part on a predetermined likelihood value constellation, and to map read patterns from the non-volatile memory to likelihood values, and a read controller operable to read the non-volatile memory using the at least one reference voltage and the at least one other reference voltage to yield the read patterns.

Abstract: Systems and method relating generally to solid state memory, and more particularly to systems and methods for recovering data from a solid state memory. In one embodiment, the systems and methods include providing a flash memory circuit including a superset of memory cells, accessing a data set from a group of memory cells using a standard reference value to distinguish bit values in the group of memory cells, and based at least in part on determining that the group of memory cells was a last written group of memory cells, re-accessing a data set from the group of memory cells using a last written reference value to distinguish bit values in the group of memory cells.

Abstract: Systems and methods relating generally to data processing, and more particularly to systems and methods for characterizing a solid state memory. In one embodiment, the systems and methods may include programming a first cell of a solid state memory device to a negative voltage, programming a second cell of the solid state memory device to a positive voltage, wherein the second cell is adjacent to the first cell, calculating a voltage shift on the negative voltage programmed to the first cell, characterizing a shifted voltage level on the first cell as an interim voltage, and subtracting the voltage shift from the interim voltage to yield an actual voltage on the first cell.

Abstract: The present inventions are related to systems and methods for storing data, and more particularly to systems and methods for writing data to a storage device.

Abstract: Systems and method relating generally to solid state memory, and more particularly to systems and methods for recycling data in a solid state memory. The systems and methods include receiving a data set maintained in a memory device, applying at least one iteration of a data decoding algorithm to the data set by a data decoder circuit to yield a decoded output, counting the number of iterations of the data decoding algorithm applied to the data set to yield an iteration count, and recycling the data set to the memory device. The recycling is triggered based at least in part on the iteration count.

Abstract: A low-density parity-check decoder utilizes information about hard errors in a storage medium to identify bit locations to flip log-likelihood ratios while attempting to decode codewords. The decoder iteratively flips and saturates log-likelihood ratios for bits at hard error locations and re-decodes until a valid codeword is produced. The decoder also identifies variable nodes associated with trapping sets for iterative log-likelihood ratio bit flipping.

Abstract: An electronic non-volatile computer storage apparatus and methods for reducing decoder error floor for such a storage apparatus are disclosed. An analysis process it utilized to study one or more performance metrics of a decoder of the storage apparatus in order to determine various endurance points throughout the lifetime of that particular type of storage apparatus. Theses endurance points indicate when different scaling factors should be applied and/or when log-likelihood ratio should be re-measured to accommodate physical degradations over time.