Abstract: This wireless communication control device is a first wireless control device provided with: a control circuit that causes the waveform of a reference signal transmitted to a wireless communication device in coordination with a second wireless communication control device to differ, either in the frequency domain or the time domain, from the waveform of a reference signal transmitted to the wireless communication device by the second wireless communication control device; and a transmission circuit that transmits the reference signal.

Abstract: A magnetic storage device includes first and second magnetic layers and a non-magnetic layer, where the non-magnetic layer includes a first oxide layer containing magnesium and oxygen, a second oxide layer containing magnesium and oxygen, a third oxide layer containing zinc and oxygen, a fourth oxide layer containing a first predetermined element and oxygen, and a fifth oxide layer containing a second predetermined element and oxygen, and a crystal structure of an oxide of the first predetermined element and a crystal structure of an oxide of the second predetermined element are each a rock salt structure. The first predetermined element and the second predetermined element each have an oxide formation free energy greater than an oxide formation free energy of zinc, and the oxide of the first predetermined element and the oxide of the second predetermined element each have a bandgap narrower than a bandgap of an oxide of magnesium.

Abstract: According to one embodiment, a magnetic device includes a layered body with a first magnetic layer, a second magnetic layer, and a first non-magnetic layer between the first magnetic body and the second magnetic body. A side wall layer covers at least a side wall of the first non-magnetic body of the layered body and includes at least one first substance chosen from silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride, and silicon nitride, and at least one second substance chosen from arsenic, tellurium, antimony, bismuth, and germanium.

Abstract: According to one embodiment, a magnetic memory device includes first and second wirings, and memory cells between the first and second wirings, and each including a switching element and a magnetoresistance effect element, the switching element being connected to a first wiring, and the magnetoresistance effect element being connected to a second wiring. The switching element includes a bottom electrode, a top electrode, and a switching material layer between the bottom and top electrodes, and the bottom electrode included in each of the memory cells adjacent to each other in a first direction is continuously provided on the first wiring connecting the memory cells adjacent to each other in the first direction.

Abstract: This terminal comprises: a control circuit that determines, on the basis of a plurality of signals received from a plurality of transmission sources that carry out uplink cooperative communication, the uplink transmission power; and a transmission circuit that carries out uplink transmission via the determined transmission power.

Abstract: This base station comprises: a control circuit that determines a format for a control signal on the basis of the type of cooperative communication; and a transmission circuit that transmits, according to the format, the control signal to another base station.

Abstract: The present invention improves the efficiency of transmissions in a multilink. A communication device according to the present invention comprises: a control circuit that controls multilink transmissions on the basis of control information related to the multilink transmissions; and a transmission circuit that performs the multilink transmissions in accordance with the control of the multilink transmissions.

Abstract: A storage device includes a memory cell including a variable resistance element and a switching element having snapback current-voltage characteristics. The switching element includes a first conductive layer in contact with the variable resistance element, a second conductive layer, and a switching layer provided between the first conductive layer and the second conductive layer. The switching layer includes at least one switching member and a first insulating layer having a thermal conductivity higher than 1.4 W/m/K. A cross-sectional area of the switching member at a connection surface between the switching layer and the first conductive layer and a cross-sectional area of the switching member at a connection surface between the switching layer and the second conductive layer are each smaller than a cross-sectional area at a connection surface between the first conductive layer and the variable resistance element.

Abstract: The present invention contributes to providing a wireless communication device and a wireless communication method with which it is possible to reduce the information amount of information transmitted and received between cooperating wireless communication devices. A first wireless communication device comprises a control unit that assigns an identifier to a second wireless communication device that is not included in a basic service set to which the first wireless communication device belongs, and a transmission unit that transmits a signal including the identifier.

Abstract: A switching element includes a first conductive layer, a second conductive layer, and a switching material layer provided between the first conductive layer and the second conductive layer and formed of an insulating material containing an additional element. The switching material layer includes a first interface region including a first interface between the first conductive layer and the switching material layer and a second interface region including a second interface between the second conductive layer and the switching material layer. A concentration of the additional element in the switching material layer has a first peak in the first interface region.

Abstract: The present invention provides a transmission device and transmission method that are capable of improving reception quality during cooperative communication. A first transmission device according to the present invention comprises: a control circuit which, if the first transmission device and a second transmission device are carrying out transmission in cooperation, generates first control information that includes information common to at least a portion of second control information transmitted by the second transmission device in a second preamble; and a transmission circuit which transmits the first control information in a first preamble.

Abstract: According to one embodiment, a memory device includes a first memory cell, a second memory cell adjacent to the first memory cell in a first direction, and a third memory cell adjacent to the first memory cell in a second direction, each of the first, second, and third memory cells including a resistance change memory element and a switching element. The switching element includes first and second electrodes, and a switching material layer between the first and second electrodes, the first and second electrodes overlap each other when viewed from the first direction, the first electrodes in the first and second memory cells are apart from each other, and the switching material layers in the first and second memory cells are continuously provided.

Abstract: The present invention appropriately controls settings of feedbacks to a plurality of transmission sources. This wireless communication device comprises: a reception circuit for receiving a plurality of wireless signals transmitted by a plurality of transmission sources; and a control circuit for controlling settings of feedbacks with respect to the plurality of radio signals, depending on differences in reception quality of the plurality of wireless signals.

Abstract: A semiconductor memory device has a first wiring extending in a first direction and a second wiring extending in a second direction. The first and second wirings are spaced from each other in a third direction. The second wiring has a first recess facing the first wiring. A resistance change memory element is connected between the first and second wirings. A conductive layer is between the resistance change memory element and the second wiring and includes a first protrusion facing the second wiring. A switching portion is between the conductive layer and the second wiring and includes a second recess facing the conductive layer and a second protrusion facing the second wiring. The first protrusion is in the second recess. The second protrusion is in the first recess. The switching portion is configured to switch conductivity state according to voltage between the first wiring and the second wiring.

Abstract: This communication device comprises: a control circuit that, on the basis of first information relating to the reception quality of a plurality of spatial streams, determines a spatial stream for feeding back second information; and a transmission circuit that transmits the second information relating to the determined spatial stream.

Abstract: According to one embodiment, a magnetic memory device includes first and second wirings, and memory cells between the first and second wirings, and each including a switching element and a magnetoresistance effect element, the switching element being connected to a first wiring, and the magnetoresistance effect element being connected to a second wiring. The switching element includes a bottom electrode, a top electrode, and a switching material layer between the bottom and top electrodes, and the bottom electrode included in each of the memory cells adjacent to each other in a first direction is continuously provided on the first wiring connecting the memory cells adjacent to each ether in the first direction.

Abstract: A semiconductor memory device has a first wiring extending in a first direction and a second wiring extending in a second direction. The first and second wirings are spaced from each other in a third direction. The second wiring has a first recess facing the first wiring. A resistance change memory element is connected between the first and second wirings. A conductive layer is between the resistance change memory element and the second wiring and includes a first protrusion facing the second wiring, A switching portion is between the conductive layer and the second wiring and includes a second recess facing the conductive layer and a second protrusion facing the second wiring. The first protrusion is in the second recess. The second protrusion is in the first recess. The switching portion is configured to switch conductivity state according to voltage between the first wiring and the second wiring.

Abstract: According to one embodiment, a magnetic memory includes: a semiconductor substrate; a switching element above the semiconductor substrate, the switching element provided between a first terminal and a second terminal; a first contact portion coupled to the first terminal and provided in a first insulator layer on the semiconductor substrate; a second contact portion including copper and provided in a second insulator layer on the first insulator layer; a conductive layer provided on the second contact portion; and a magnetoresistive effect element provided on the conductive layer.

Abstract: According to one embodiment, a magnetic device includes: a first electrode above a substrate, the first electrode including a first portion and a second portion adjacent to the first portion in a direction parallel to a surface of the substrate; a second electrode above the first electrode; a first magnetic layer between the first electrode and the second electrode; a second magnetic layer between the first magnetic layer and the second electrode; and a non-magnetic layer between the first magnetic layer and the second magnetic layer, wherein an upper face of the first portion is located closer to the substrate than an upper face of the second portion.

Abstract: According to one embodiment, a magnetoresistive memory device includes bottom electrodes provided on a substrate, a magnetoresistive element provided on each of the bottom electrodes, a top electrode provided on each of the magnetoresistive elements, an insulating film provided on sides of the bottom electrode, the magnetoresistive element and, the top electrode, and a magnetic layer provided on the top electrode, the magnetic layer extending on the insulating film to connect a plurality of those of the top electrodes.