Abstract: In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask.

Abstract: A method of manufacturing a semiconductor device includes: forming a first mandrel and a second mandrel over a mask layer; depositing a spacer layer over the first mandrel and the second mandrel; forming a line-end cut pattern over the spacer layer between the first mandrel and the second mandrel; depositing a protection layer over the line-end cut pattern; etching the protection layer on the line-end cut pattern; reducing a width of the line-end cut pattern; etching first horizontal portions of the spacer layer with the reduced line-end cut pattern as an etching mask; removing the first mandrel and the second mandrel; and patterning the mask layer using the etched spacer layer and the etched line-end cut pattern as an etch mask.

Abstract: An embodiment is a method of fabricating a semiconductor structure. The method includes utilize uses of a multi-layer structure disposed on a pattern defining layer. In some embodiments, a method of fabricating a semiconductor structure includes forming a first multi-layer structure on a pattern defining layer disposed on a film stack on a substrate, patterning the first multi-layer structure to form an aperture in the first multi-layer structure, forming a first cut opening in the pattern defining layer through the aperture defined by the first multi-layer structure, and forming a second multi-layer structure on the pattern defining layer, a portion of the second multi-layer structure being disposed in the first cut opening.

Abstract: The present disclosure relates to anti-SSEA4 antibodies and bindings fragments thereof comprising specific complementarity determining regions capable of high affinity binding to SSEA4 molecules and SSEA4-associated expressing tumor cells, such as breast cancer, pancreatic cancer, and renal cancer cells. The anti-SSEA4 antibodies and binding fragments induce ADCC or CDC effects in the targeted tumor cells and inhibit and/or reduce the cancer/tumor proliferation. The present disclosure also provides anti-SSEA4 antibodies and binding fragments thereof as a pharmaceutical composition for treating cancer. In addition, the anti-SSEA4 antibodies and binding fragments are useful in the diagnosis of cancers.

Abstract: A method includes illuminating a wafer by an X-ray, detecting a spatial domain pattern produced when illuminating the wafer by the X-ray, identifying at least one peak from the detected spatial domain pattern, and analyzing the at least one peak to obtain a morphology of a transistor structure of the wafer.

Abstract: The present disclosure relates to some embodiments of a method for improving processing efficiency of a cluster tool. The method comprises transferring a first lot of wafers from a transfer load lock to a designated storage load lock and transferring a second lot of wafers from the transfer load lock to the designated storage load lock while the first lot of wafers is in the transfer load lock or the designated storage load lock. The designated storage load lock has the same structure as the transfer load lock and respectively has an inner load lock portal at an interface with the first transfer chamber and an outer load lock portal on a sidewall of a front end interface. The inner load lock portal of the designated storage load lock is retained opened during processing. The outer load lock portal of the designated storage load lock is retained closed during processing.

Abstract: Disclosed is a composition for preventing and treating a Mycoplasma hyorhinis infection in swine. The composition uses XylF, DnaK, P72, or a combination thereof as an active pharmaceutical ingredient. Further disclosed are an expression vector and a method for producing the active pharmaceutical ingredient of the composition using a prokaryotic expression system.

Abstract: The present disclosure relates to anti-SSEA4 antibodies and bindings fragments thereof comprising specific complementarity determining regions capable of high affinity binding to SSEA4 molecules and SSEA4-associated expressing tumor cells, such as breast cancer, pancreatic cancer, and renal cancer cells. The anti-SSEA4 antibodies and binding fragments induce ADCC or CDC effects in the targeted tumor cells and inhibit and/or reduce the cancer/tumor proliferation. The present disclosure also provides anti-SSEA4 antibodies and binding fragments thereof as a pharmaceutical composition for treating cancer. In addition, the anti-SSEA4 antibodies and binding fragments are useful in the diagnosis of cancers.

Abstract: An embodiment is a method of fabricating a semiconductor structure. The method includes utilize uses of a multi-layer structure disposed on a pattern defining layer. In some embodiments, a method of fabricating a semiconductor structure includes forming a first multi-layer structure on a pattern defining layer disposed on a film stack on a substrate, patterning the first multi-layer structure to form an aperture in the first multi-layer structure, forming a first cut opening in the pattern defining layer through the aperture defined by the first multi-layer structure, and forming a second multi-layer structure on the pattern defining layer, a portion of the second multi-layer structure being disposed in the first cut opening.

Abstract: An embodiment is a method of fabricating a semiconductor structure. The method includes utilize uses of a multi-layer structure disposed on a pattern defining layer. In some embodiments, a method of fabricating a semiconductor structure includes forming a first multi-layer structure on a pattern defining layer disposed on a film stack on a substrate, patterning the first multi-layer structure to form an aperture in the first multi-layer structure, forming a first cut opening in the pattern defining layer through the aperture defined by the first multi-layer structure, and forming a second multi-layer structure on the pattern defining layer, a portion of the second multi-layer structure being disposed in the first cut opening.

Abstract: Some embodiments relate to a cluster tool for semiconductor manufacturing. The cluster tool comprises a first transfer chamber having a first transfer robot. The cluster tool further comprises a designated storage chamber and a transfer load lock attached to the first transfer chamber. The cluster tool further comprises a second transfer chamber connected to the first transfer chamber through a pair of via connector chambers, the second transfer chamber having a second transfer robot. The cluster tool further comprises at least three epitaxial deposition chamber attached to the second transfer chamber. The cluster tool further comprises a control unit configured to control the second transfer robot to transfer wafers between the designated storage chamber and the transfer load lock.

Abstract: An antibody-drug conjugate (ADC) has a structure represented by Formula (I): a pharmaceutically acceptable salt thereof wherein Ab is an antibody without glycans (i.e., the protein portion an antibody); G1 and G2 are glycan moieties, which may be the same or different; Cn1 and Cn2 are conjugation moieties, which may be the same or different; L1 and L2 are linker moieties, which may be the same or different; D1 and D2; are drug units which may be the same or different; and x and y are independently an integer from 0 to 8, provided that x+y?0.

Abstract: A metrology device includes a light source and an image sensor. The light source is configured for providing an X-ray illuminating a wafer. The image sensor is configured for detecting a spatial domain pattern produced when the X-ray illuminating the wafer.

Abstract: A mutant of EndoS2 includes one or more mutations in the sequence of a wild-type EndoS2 (SEQ ID NO:1), wherein the one or more mutations are in a peptide region located within residues 133-143, residues 177-182, residues 184-189, residues 221-231, and/or residues 227-237, wherein the mutant of EndoS2 has a low hydrolyzing activity and a high tranglycosylation activity, as compared to those of the wild-type EndoS2. A method for preparing an engineered glycoprotein using the mutant of EndoS2 includes coupling an activated oligosaccharide to a glycoprotein acceptor. The activated oligosaccharide is a glycan oxazoline.

Abstract: A method of manufacturing a semiconductor device includes: forming a first mandrel and a second mandrel over a mask layer; depositing a spacer layer over the first mandrel and the second mandrel; forming a line-end cut pattern over the spacer layer between the first mandrel and the second mandrel; depositing a protection layer over the line-end cut pattern; etching the protection layer on the line-end cut pattern; reducing a width of the line-end cut pattern; etching first horizontal portions of the spacer layer with the reduced line-end cut pattern as an etching mask; removing the first mandrel and the second mandrel; and patterning the mask layer using the etched spacer layer and the etched line-end cut pattern as an etch mask.

Abstract: A method of forming a semiconductor device structure is provided. The method includes successively forming first and second hard mask layers over a trench pattern region of a material layer. The second hard mask layer has a first tapered opening corresponding to a portion of the trench pattern region and a passivation spacer is formed on a sidewall of the first tapered opening to form a second tapered opening therein. The method also includes forming a third tapered opening below the second tapered opening and removing a portion of the passivation spacer in a first etching process. The method also includes forming a vertical opening in the first hard mask layer below the bottom of the third tapered opening in a second etching process. The vertical opening has a width that is substantially equal to a bottom width of the third tapered opening.

Abstract: A method of forming a semiconductor device structure is provided. The method includes successively forming first and second hard mask layers over a trench pattern region of a material layer. The second hard mask layer has a first tapered opening corresponding to a portion of the trench pattern region and a passivation spacer is formed on a sidewall of the first tapered opening to form a second tapered opening therein. The method also includes forming a third tapered opening below the second tapered opening and removing a portion of the passivation spacer in a first etching process. The method also includes forming a vertical opening in the first hard mask layer below the bottom of the third tapered opening in a second etching process. The vertical opening has a width that is substantially equal to a bottom width of the third tapered opening.

Abstract: The present application provides a shuttle vector which can be manipulated in various kinds of host cells, thereby providing a novel tool for the field of genetic engineering. On the other hand, the present application further provides a prokaryotic host cell and a kit comprising said shuttle vector, so as to construct expression vectors which contain the target gene using the shuttle vector, thereby producing proteins in various host cells with one single vector.

Abstract: The present invention provides a preparation method for PCV2 capsid protein and a pharmaceutical composition containing said capsid protein. The method of the present invention uses a novel arabinose-induced expression vector and thereby improves the synthesis efficiency of said PCV2 capsid protein. On the other hand, the present pharmaceutical composition combines said capsid protein and other favorable components at a proper ratio so that achieves excellent immune-inducing effects.

Abstract: A method for reducing wiggling in a line includes forming a silicon patterning layer over a substrate and depositing a mask layer over the silicon patterning layer. The mask layer is patterned to form one or more openings therein. The mask layer is thinned and the one or more openings are widened, to provide a smaller height-to-width ratio. The pattern of the mask layer is then used to pattern the silicon patterning layer. The silicon patterning layer is used, in turn, to pattern a target layer where a metal line will be formed.