Abstract: Provided is a copper paste containing a copper powder and an organic solvent, wherein the organic solvent is an alcohol-based solvent containing one or more first alcohols selected from the group consisting of monohydric and dihydric alcohols having a viscosity at 20° C. of 30-70 mPa·s, and one or more second alcohols selected from the group consisting of dihydric and trihydric alcohols having a viscosity at 20° C. of 300-1000 mPa·s.

Abstract: A refrigerant flow path unit includes: a unit body that includes plates that are laminated together, and has an interior in which a refrigerant flow path is formed; a refrigerant pipe; and a first brazing filler metal that joins the unit body to the refrigerant pipe. The plates of the unit body include: a first plate that has a first opening and is disposed at an end of the unit body in a first direction in which the plates are laminated; and a second plate that has a second opening that communicates with the first opening and is disposed second from the end of the unit body in the first direction. The refrigerant pipe is inserted into the first opening and the second opening.

Abstract: The purpose of the present invention is to provide an electronic component in which a copper electrode and an inorganic substrate exhibit strong adhesion to each other. A method for producing an electronic component according to the present invention comprises: an application step wherein a paste is applied onto an inorganic substrate, which paste contains copper particles, copper oxide particles and/or nickel oxide particles, and inorganic oxide particles having a softening point; a sintering step wherein a sintered body which contains at least copper is formed by means of heating in an inert gas atmosphere at a temperature that is less than the softening point of the inorganic oxide particles but not less than the sintering temperature of the copper particles; and a softening step wherein heating is carried out in an inert gas atmosphere at a temperature that is not less than the softening point of the inorganic oxide particles.

Abstract: Provided is a semiconductor device, which has a wiring structure including a single-layer diffusion barrier layer having both a diffusion barrier function and a liner function. The semiconductor device has a wiring structure including an insulating layer, a conductive wiring, and a diffusion barrier layer disposed between the insulating layer and the conductive wiring in a manner of being in contact with both the insulating layer and the conductive wiring. The diffusion barrier layer is made of an alloy having an amorphous structure containing a first metal and a second element in an amount of 90% by mass or more in total. The first metal is any one selected from Co, Ru, and Mo. The second element is one or two or more selected from Zr, Al, and Nb when the first metal is Co, the second element is Zr when the first metal is Ru, and the second element is one or two selected from Y and B when the first metal is Mo.

Abstract: Provided are: a novel wiring board having flexibility derived from a resin board and the high electrical conductivity derived from a metal wiring as well as high adhesion between the metal wiring and the insulating resin board; and a method for manufacturing the wiring board without using a photolithography process. A wiring board according to the present invention comprises a resin board and a metal wiring, the metal wiring including a sintered body of metal particles, the sintered body including a plurality of voids having opening portions extending toward the resin board, parts of the resin board entering the voids from the opening portions.

Abstract: A circuit board that has flexibility owing to an organic insulating layer and that still has high adhesion between metal wiring and the organic insulating layer; and a method for producing the circuit board without employing photolithography. The circuit board comprising a metal wiring arrangement portion and a metal wiring non-arrangement portion, wherein: in the metal wiring arrangement portion, metal wiring, a first diffusion layer, and a first organic insulating layer are stacked; in the metal wiring non-arrangement portion, a metal oxide layer, a second diffusion layer, and a second organic insulating layer are stacked; the metal wiring is made of a first metal element; and the first diffusion layer contains the first metal element and a second metal element.

Abstract: Provided is a copper-based paste capable of bonding a chip component and a substrate more firmly and obtaining a copper-based bonding material having high thermal conductivity. This copper oxide paste includes copper-containing particles, a binder resin, and an organic solvent. The copper-containing particles contain Cu2O and CuO. The total amount of copper element constituting Cu2O and copper element constituting CuO is 90% or more of the copper element contained in the copper-containing particles. The copper-containing particles have a 50% cumulative particle size (D50) of 0.20-5.0 ?m inclusive; the 50% cumulative particle size (D50) and the 10% cumulative particle size (D10) satisfy 1.3?D50/D10?4.9; the 50% cumulative particle size (D50) and the 90% cumulative particle size (D90) satisfy 1.2?D90/D50?3.7, and the BET specific surface area of the copper-containing particles is 1.0 m2/g to 8.0 m2/g inclusive.

Abstract: To provide a wiring material which does not require a diffusion barrier layer and exhibits excellent conductivity and adhesion property between a conductor and an insulator and a semiconductor element using the same. The wiring structure of the present invention includes a conductor containing an intermetallic compound and an insulator layer. The intermetallic compound preferably contains two or more kinds of metal elements selected from the group consisting of Al, Fe, Co, Ni, and Zn. In addition, the intermetallic compound is preferably one or more kinds selected from an intermetallic compound containing Al and Co, an intermetallic compound containing Al and Fe, an intermetallic compound containing Al and Ni, an intermetallic compound containing Co and Fe, or an intermetallic compound containing Ni and Zn.

Abstract: Provided are a solar cell having a good conversion efficiency in which damage to a p-n junction structure is prevented when an antireflection film is removed, and a method of manufacturing such a solar cell.

Abstract: A semiconductor device includes a substrate, a conductive wiring which comprises cobalt or copper and is electrically connected to the substrate, an insulating material which electrically isolates the conductive wiring from neighboring wiring, and a first barrier layer which comprises a first cobalt alloy and is disposed between the conductive wiring and the insulating material.

Abstract: The purpose of the present invention is to provide an electronic component in which a copper electrode and an inorganic substrate exhibit strong adhesion to each other. A method for producing an electronic component according to the present invention comprises: an application step wherein a paste is applied onto an inorganic substrate, which paste contains copper particles, copper oxide particles and/or nickel oxide particles, and inorganic oxide particles having a softening point: a sintering step wherein a sintered body which contains at least copper is formed by means of heating in an inert gas atmosphere at a temperature that is less than the softening point of the inorganic oxide particles but not less than the sintering temperature of the copper particles; and a softening step wherein hearing is carried out in an inert gas atmosphere at a temperature that is not less than the softening point of the inorganic oxide particles.

Abstract: A circuit board that has flexibility owing to an organic insulating layer and that still has high adhesion between metal wiring and the organic insulating layer; and a method for producing the circuit board without employing photolithography. The circuit board comprising a metal wiring arrangement portion and a metal wiring non-arrangement portion, wherein: in the metal wiring arrangement portion, metal wiring, a first diffusion layer, and a first organic insulating layer are stacked; in the metal wiring non-arrangement portion, a metal oxide layer, a second diffusion layer, and a second organic insulating layer are stacked; the metal wiring is made of a first metal element; and the first diffusion layer contains the first metal element and a second metal element.

Abstract: A semiconductor device includes a substrate, a conductive wiring which comprises cobalt or copper and is electrically connected to the substrate, an insulating material which electrically isolates the conductive wiring from neighboring wiring, and a first barrier layer which comprises a first cobalt alloy and is disposed between the conductive wiring and the insulating material.

Abstract: A semiconductor device includes a substrate, a conductive wiring which comprises cobalt or copper and is electrically connected to the substrate, an insulating material which electrically isolates the conductive wiring from neighboring wiring, and a first barrier layer which comprises a first cobalt alloy and is disposed between the conductive wiring and the insulating material.

Abstract: The present invention is provided with an interface layer that minimizes interdiffusion between a silicon substrate and copper electrode wiring that are used as a solar cell, that improves the adhesive properties of copper wiring, and that is used to obtain ohmic contact characteristics. This silicon solar cell comprises a silicon substrate and is provided with a metal oxide layer that is formed on the silicon substrate and wiring that is formed on the metal oxide layer and that comprises mainly copper. The metal oxide layer contains (a) one of either titanium or manganese, (b) one of vanadium, niobium, tantalum, or silicon, and (c) at least one of copper and nickel. In addition, the metal oxide layer comprises copper or nickel as metal particles that are diffused in the interior of the metal oxide layer.

Abstract: To provide a wiring material which does not require a diffusion barrier layer and exhibits excellent conductivity and adhesion property between a conductor and an insulator and a semiconductor element using the same. The wiring structure of the present invention includes a conductor containing an intermetallic compound and an insulator layer. The intermetallic compound preferably contains two or more kinds of metal elements selected from the group consisting of Al, Fe, Co, Ni, and Zn. In addition, the intermetallic compound is preferably one or more kinds selected from an intermetallic compound containing Al and Co, an intermetallic compound containing Al and Fe, an intermetallic compound containing Al and Ni, an intermetallic compound containing Co and Fe, or an intermetallic compound containing Ni and Zn.

Abstract: To provide a method for firing a copper paste, which improves sinterability of copper particles for the purpose of forming a copper wiring line that is decreased in the electrical conductivity. A method for firing a copper paste, which comprises: an application step wherein a copper paste is applied over a substrate; a first heating step wherein the substrate is heated in a nitrogen gas atmosphere containing from 500 ppm to 2,000 ppm (inclusive) of an oxidizing gas in terms of volume ratio after the application step, thereby oxidizing and sintering copper particles in the copper paste; and a second heating step wherein the substrate is heated in a nitrogen gas atmosphere containing 1% or more of a reducing gas in terms of volume ratio after the first heating step, thereby reducing the oxidized and sintered copper oxide.

Abstract: A solar cell module capable of preventing the occurrence of a PID failure in a solar photovoltaic power generation system with a MW capacity, said system being used in a high-temperature high-humidity environment; and a method for manufacturing this solar cell module. A solar cell module which comprises a protection glass material and a sealing material on a light receiving surface side of a substrate, and which also comprises an oxide layer between the substrate and the protection glass material, said oxide layer containing a metal element and silicon. It is preferable that the oxide layer contains at least one metal element selected from the group consisting of magnesium, aluminum, titanium, vanadium, chromium, manganese, zirconium, niobium and molybdenum. It is also preferable that the oxide layer has a refractive index of from 1.5 to 2.3 (inclusive) with respect to incident light having a wavelength of 587 nm.

Abstract: A semiconductor device includes a substrate, a conductive wiring which comprises cobalt or copper and is electrically connected to the substrate, an insulating material which electrically isolates the conductive wiring from neighboring wiring, and a first barrier layer which comprises a first cobalt alloy and is disposed between the conductive wiring and the insulating material.

Abstract: A hard lubrication film, with which a surface of a base material is coated, has two or more alternately laminated layers that are one or more A-layers made of (CraMobWcVdBe)1?x?yCxNy and one or more B-layers made of (CraMobWcVdBe)1?x?y?zCxNyOz. Atom ratios a, b, c, d, e=1?a?b?c?d, x+y, and y related to A-layers satisfy 0.2?a?0.7, 0.05?b?0.6, 0?c?0.3, 0?d?0.05, 0?e?0.05, 0.3?x+y?0.6, and 0?y?0.6, respectively. Atom ratios a, b, c, d, e=1?a?b?c?d, x, y, z, and x+y+z related to B-layers satisfy 0.2?a?0.7, 0.05?b?0.6, 0?c?0.3, 0?d?0.05, 0?e?0.05, 0?x?0.6, 0?y?0.6, 0<z?0.6, and 0.3?x+y+z?0.6, respectively. Each A-layer has a film thickness within a range of 2 nm or more to 1000 nm or less, each B-layer has a film thickness within a range of 2 nm or more to 500 nm or less, and wherein the hard lubrication film has a total film thickness within a range of 0.1 ?m or more to 10.0 ?m or less.